processing device

Abstract

The present invention relates to a processing apparatus. A technique capable of adjusting the flow of gas in the surface direction is provided. A processing apparatus of a technical solution of the present disclosure includes: a processing vessel having a substantially cylindrical shape; a gas supply pipe that supplies gas into the processing vessel; an exhaust window that extends in the length direction of the processing vessel, and exhausts the gas from the processing vessel; and an exhaust duct that forms a first exhaust flow path that exhausts the gas exhausted via the exhaust window from one side in the length direction of the exhaust window, and a second exhaust flow path that exhausts the gas exhausted via the exhaust window from the other side in the length direction of the exhaust window, the exhaust duct having: a first gas introduction portion that introduces ballast gas into the first exhaust flow path; and a second gas introduction portion that introduces ballast gas into the second exhaust flow path.

Description

Technical Field

[0001] This disclosure relates to a processing apparatus. Background Technology

[0002] A known processing apparatus includes: a processing container that houses a boat for mounting a substrate; and an injector that extends vertically along the inner wall of the processing container and has a plurality of gas holes in the length direction (see, for example, Patent Document 1). Patent Document 1 discloses a technique in which the processing container has an inner cylinder and an outer cylinder, and a flow straightener is provided between the outer peripheral wall of the inner cylinder and the inner peripheral wall of the outer cylinder to suppress deviations in the flow of gas within the processing container.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-178136 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for adjusting the flow of gas in the inter-plane direction.

[0008] Solution for solving the problem

[0009] A processing apparatus according to the present disclosure includes: a processing container having a generally cylindrical shape; a gas supply pipe supplying gas into the processing container; an exhaust window extending along the length of the processing container to discharge the gas from the processing container; and an exhaust pipe forming a first exhaust flow path and a second exhaust flow path, the first exhaust flow path discharging the gas discharged through the exhaust window from one side of the exhaust window along its length, and the second exhaust flow path discharging the gas discharged through the exhaust window from the other side of the exhaust window along its length, the exhaust pipe having: a first gas inlet introducing ballast gas into the first exhaust flow path; and a second gas inlet introducing ballast gas into the second exhaust flow path.

[0010] The effects of the invention

[0011] According to this disclosure, the flow of gas in the inter-plane direction can be adjusted. Attached Figure Description

[0012] Figure 1 This is a longitudinal sectional view showing an example of the processing apparatus of the first embodiment.

[0013] Figure 2This is a cross-sectional view showing an example of the processing apparatus of the first embodiment.

[0014] Figure 3 This is a side view showing an example of the processing apparatus of the first embodiment.

[0015] Figure 4 This is a diagram showing an example of the exhaust pipe of the processing device according to the first embodiment.

[0016] Figure 5 This is a longitudinal sectional view showing an example of the processing apparatus of the second embodiment.

[0017] Figure 6 This is a cross-sectional view showing an example of the processing apparatus of the second embodiment.

[0018] Figure 7 This is a longitudinal sectional view showing an example of the processing apparatus of the second embodiment.

[0019] Figure 8 This is a longitudinal sectional view showing an example of the processing apparatus of the third embodiment.

[0020] Figure 9 This is a cross-sectional view showing an example of the processing apparatus of the third embodiment.

[0021] Figure 10 This is a diagram showing an example of the exhaust pipe of the processing device according to the third embodiment.

[0022] Figure 11 This is a cross-sectional view showing an example of the processing apparatus of the fourth embodiment.

[0023] Figure 12 This is a diagram showing an example of the exhaust pipe of the processing device according to the fourth embodiment.

[0024] Figure 13 This is a schematic diagram of the processing device used in the analysis.

[0025] Figure 14 This is a graph showing the inter-surface distribution of the mass flow rate of the processed gas passing through the exhaust port.

[0026] Figure 15 This is a schematic diagram of the processing device used in the analysis.

[0027] Figure 16 This is a graph showing the inter-surface distribution of the mass flow rate of the processed gas passing through the exhaust port. Detailed Implementation

[0028] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0029] [First Embodiment]

[0030] Reference Figures 1-4 This section describes an example of the processing apparatus of the first embodiment. The processing apparatus of the first embodiment is a batch-type, vertical processing apparatus capable of simultaneously depositing films on multiple substrates in batches. The processing apparatus of the embodiment is an apparatus for depositing films on substrates using, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0031] The processing apparatus 100 of the first embodiment includes: a processing container 121 having a space therein for a processing substrate 110; a cover 130 that hermetically seals the opening at the lower end of the processing container 121; and a substrate holder 140 that holds the substrate 110. The substrate 110 is, for example, a semiconductor wafer such as a silicon wafer. The substrate holder 140 is also referred to as a wafer boat.

[0032] The processing container 121 has a generally cylindrical processing container body 122 with an open bottom and a top. The processing container body 122 is formed, for example, of quartz. A flange portion 123 is formed at the lower end of the processing container body 122. In addition, the processing container 121 has, for example, a generally cylindrical manifold 124. The manifold 124 is formed, for example, of stainless steel. A flange portion 125 is formed at the upper end of the manifold 124, and the flange portion 123 of the processing container body 122 is provided above the flange portion 125. A sealing member 126, such as an O-ring, is sandwiched between the flange portion 125 and the flange portion 123.

[0033] The cover 130 is hermetically mounted to the lower end opening of the manifold 124 via a sealing member 131 such as an O-ring. The cover 130 is made of, for example, stainless steel. A through hole extending vertically through the cover 130 is formed in the center of the cover 130. A rotating shaft 134 is disposed in this through hole. The gap between the cover 130 and the rotating shaft 134 is sealed by a magnetic fluid seal 133. The lower end of the rotating shaft 134 is rotatably supported on an arm 136 of a lifting part (not shown). A rotating plate 137 is provided at the upper end of the rotating shaft 134. A substrate holder 140 is provided on the rotating plate 137 via a heat preservation platform 138.

[0034] The substrate holder 140 holds multiple substrates 110 at vertically spaced intervals. Each substrate 110 is held horizontally. The substrate holder 140 is formed, for example, of quartz (SiO2) or silicon carbide (SiC). When the arm 136 is raised using a lifting mechanism (not shown), the cover 130 and the substrate holder 140 rise, and the substrate holder 140 is fed into the processing container 121, sealing the opening at the lower end of the processing container 121. Conversely, when the arm 136 is lowered using the lifting mechanism (not shown), the cover 130 and the substrate holder 140 descend, and the substrate holder 140 is fed out of the processing container 121. Furthermore, when the rotation shaft 134 is rotated, the substrate holder 140 rotates together with the rotating plate 137.

[0035] The processing apparatus 100 of this embodiment includes gas supply pipes 151 and 152. Gas supply pipe 151 is formed of quartz (SiO2), for example, and supplies gas to the interior of the processing container 121. In addition, the processing apparatus 100 may also have other gas supply pipes.

[0036] The gas supply pipe 151 has a nozzle portion 151a, which is arranged vertically inside the processing container body 122, for example. A plurality of gas holes 151b are provided at intervals along the vertical direction in the nozzle portion 151a. The plurality of gas holes 151b eject gas horizontally. The nozzle portion 151a has a horizontal portion of the gas supply pipe that horizontally penetrates the manifold 124. Gas supplied to each horizontal portion is conveyed to the nozzle portion 151a and ejected horizontally from each gas hole 151b. On the other hand, the gas supply pipe 152 horizontally penetrates the manifold 124, and gas supplied to the gas supply pipe 152 from outside the manifold 124 is ejected into the interior of the manifold 124.

[0037] An exhaust window 128 is provided in the processing container body 122. The exhaust window 128 is located opposite to the gas hole 151b. The exhaust window 128 exhausts gas into the interior of the processing container 121. The exhaust window 128 is a rectangular exhaust slit with the vertical direction as its length. However, the exhaust window 128 can also be a plurality of exhaust holes spaced apart in the vertical direction. The exhaust holes can be, for example, circular or rectangular. In addition, the exhaust window 128 can also be a combination of an exhaust slit and an exhaust hole. An exhaust pipe 180 is provided in the processing container body 122 to surround the exhaust window 128.

[0038] The exhaust duct 180 has a wall 181, a baffle 182, exhaust ports 183a and 183b, and gas inlets 184a and 184b.

[0039] The wall portion 181 is mounted on the outer wall of the processing container body 122 in a manner that surrounds the exhaust window 128. The wall portion 181 is formed to protrude radially outward from the processing container body 122.

[0040] A diverter plate 182 is disposed inside the wall portion 181. The diverter plate 182 is rectangular and is arranged parallel to the length direction of the exhaust window 128. The diverter plate 182 connects the outer wall of the processing container body 122 and the inner wall of the wall portion 181. The diverter plate 182 extends upward from the bottom 181a of the wall portion 181 and forms a gap 185 between it and the top 181b of the wall portion 181. Thus, for the processing gas flowing into the wall portion 181 from the exhaust window 128, a portion is discharged from the bottom of the exhaust window 128 through the exhaust flow path 186a leading to the exhaust port 183a, and the remaining portion passes through the gap 185 from the top of the exhaust window 128 and is discharged through the exhaust flow path 186b leading to the exhaust port 183b.

[0041] The exhaust port 183a is located in the wall portion 181 below the exhaust window 128. The exhaust port 183a discharges the processed gas that flows into the interior of the wall portion 181 from the exhaust window 128 through the lower part of the exhaust window 128.

[0042] The exhaust port 183b is located on the wall portion 181, separated by the diverter plate 182. The exhaust port 183b discharges the processed gas that flows into the interior of the wall portion 181 from the exhaust window 128 through the top of the exhaust window 128.

[0043] The gas inlet 184a is located on the side of the bottom 181a of the wall portion 181 where the exhaust window 128 is located. However, the gas inlet 184a may also be located on the side portion 181c of the wall portion 181 where the exhaust window 128 is located, at a position lower than the exhaust window 128. The gas inlet 184a introduces ballast gas into the exhaust flow path 186a.

[0044] The gas inlet 184b is located on the side of the bottom 181a of the wall portion 181 where the exhaust window 128 is not located. However, the gas inlet 184b may also be located on the side 181d of the wall portion 181 where the exhaust window 128 is not located. Alternatively, the gas inlet 184b may be located on the side 181c of the wall portion 181 where the exhaust window 128 is located, at a position above the exhaust window 128. Furthermore, the gas inlet 184b may also be located on the top 181b of the wall portion 181. The gas inlet 184b introduces ballast gas into the exhaust flow path 186b.

[0045] Furthermore, the gas inlets 184a and 184b can be either openings formed in the wall portion 181 or gas pipes that penetrate the wall portion 181 and extend into its interior. Additionally, the ballast gas can be, for example, an inert gas such as N2 or Ar.

[0046] In the exhaust duct 180, the processing gas supplied to the processing container 121 flows into the interior of the wall portion 181 through the exhaust window 128. The processing gas flowing into the interior of the wall portion 181 is discharged through either exhaust port 183a or 183b. At this time, ballast gas is introduced into the interior of the wall portion 181 from the gas inlets 184a and 184b, thereby controlling the flow conductance of the exhaust flow path 186a and the exhaust flow path 186b. As a result, the balance between the flow rate of the processing gas discharged through exhaust port 183a and the flow rate of the processing gas discharged through exhaust port 183b can be adjusted. That is, the intensity of upward and downward suction of the processing gas flowing into the exhaust duct 180 through the exhaust window 128 can be adjusted. As a result, the flow rate distribution of the processing gas in the vertical direction (inter-plane direction) within the processing container 121 can be adjusted.

[0047] For example, increasing the flow rate of ballast gas introduced from gas inlet 184a to exhaust flow path 186a reduces the flow rate of processed gas discharged through exhaust port 183a and increases the flow rate of processed gas discharged through exhaust port 183b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 184a to exhaust flow path 186a increases the flow rate of processed gas discharged through exhaust port 183a and decreases the flow rate of processed gas discharged through exhaust port 183b.

[0048] Alternatively, for example, increasing the flow rate of ballast gas introduced from gas inlet 184b to exhaust flow path 186b increases the flow rate of processed gas discharged through exhaust port 183a and decreases the flow rate of processed gas discharged through exhaust port 183b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 184b to exhaust flow path 186b decreases the flow rate of processed gas discharged through exhaust port 183a and increases the flow rate of processed gas discharged through exhaust port 183b.

[0049] Exhaust pipes 155 are connected to exhaust ports 183a and 183b. An on / off valve 157 and an exhaust device 158 are sequentially connected to exhaust pipes 155. The opening and closing of the on / off valve 157 controls the exhaust from inside the processing container 121. The on / off valve 157 also functions as a pressure control valve to control the internal air pressure of the processing container 121. The exhaust device 158 includes a vacuum pump to exhaust the gas inside the processing container 121. The exhausted gas is transported to a purification device (not shown) to remove harmful components before being released into the atmosphere.

[0050] The processing apparatus 100 of this embodiment includes a heating unit 160. The heating unit 160 heats the interior of the processing container 121, thereby improving the processing capacity of the gas supplied to the interior of the processing container 121. The heating unit 160 is disposed outside the processing container 121, heating the interior of the processing container 121 from the outside. For example, the heating unit 160 is formed in a generally cylindrical shape to surround the processing container body 122. The heating unit 160 is, for example, composed of an electric heater.

[0051] The processing apparatus 100 of this embodiment includes a processing gas supply unit 170. The processing gas supply unit 170 supplies processing gas to the interior of the processing container 121. The processing gas includes, for example, the raw material gas used for film formation. The processing gas supply unit 170 includes a processing gas supply source, a processing gas piping, a flow controller, and a valve (not shown). The processing gas supply source and the gas supply pipe 151 are connected via the processing gas piping, and processing gas is supplied from the processing gas supply source to the gas supply pipe 151. The processing gas is horizontally ejected from the gas hole 151b of the nozzle portion 151a toward the substrate 110. The flow controller and the valve are located midway through the processing gas piping; the flow controller controls the flow rate of the processing gas, and the valve controls the supply of the processing gas by opening and closing.

[0052] The processing apparatus 100 of this embodiment includes a purge gas supply unit 171. The purge gas supply unit 171 supplies purge gas to the interior of the processing container 121, thereby removing residual processing gas inside the processing container 121. The purge gas can be, for example, an inert gas such as N2 or Ar. The purge gas supply unit 171 includes a purge gas supply source, a purge gas piping, a flow controller, and a valve (not shown). The purge gas supply source and the gas supply pipe 152 are connected via the purge gas piping, and purge gas is supplied from the purge gas supply source to the gas supply pipe 152. The purge gas supplied to the gas supply pipe 152 is ejected into the manifold 124. The flow controller and the valve are located midway through the purge gas piping; the flow controller controls the flow rate of the purge gas, and the valve controls the supply of the purge gas. Furthermore, while this embodiment describes the case where purge gas is supplied from the gas supply pipe 152, it is not limited to this; for example, purge gas can also be supplied from the gas supply pipe 151.

[0053] The processing apparatus 100 in this embodiment includes a ballast gas supply unit 172. The ballast gas supply unit 172 supplies ballast gas into the exhaust pipe 180, thereby controlling the flow of the processed gas within the exhaust pipe 180. The ballast gas can be, for example, an inert gas such as N2 or Ar. The ballast gas supply unit 172 includes a ballast gas supply source, ballast gas piping, a flow controller, and valves (not shown). The ballast gas supply source is connected to gas inlets 184a and 184b via ballast gas piping, and ballast gas is supplied from the ballast gas supply source to the gas inlets 184a and 184b. The ballast gas supplied to the gas inlets 184a and 184b is ejected into the exhaust pipe 180. The flow controller and valve are located midway through the ballast gas piping; the flow controller controls the flow rate of the ballast gas, and the valve controls the supply of ballast gas by opening and closing. Alternatively, the purge gas supply section 171 can be branched off and connected to the gas inlets 184a and 184b, so that the purge gas from the purge gas supply source can be used as ballast gas.

[0054] The processing apparatus 100 of this embodiment includes a control unit 190. The control unit 190 is, for example, a computer, which controls the overall operation of the processing apparatus 100. Furthermore, the computer program that performs the overall operation of the processing apparatus 100 may also be stored on a storage medium. The storage medium may be, for example, a floppy disk, optical disk, hard disk, flash memory, DVD, etc.

[0055] [Second Implementation]

[0056] Reference Figures 5-7 This section describes an example of the processing apparatus of the second embodiment. The processing apparatus of the second embodiment is a batch-type, vertically oriented processing apparatus capable of simultaneously depositing films on multiple substrates in batches. The processing apparatus of the embodiment utilizes, for example, CVD or ALD, an apparatus for depositing films on substrates.

[0057] The processing apparatus 200 includes a processing container 234 for housing substrates W and a cover 236 for sealing the opening at the lower end of the processing container 234 on the Z2 side. The substrate W may be, for example, a semiconductor wafer such as a silicon wafer. Furthermore, the processing apparatus 200 includes: a substrate holder 238 capable of housing multiple substrates W within the processing container 234 and holding them at predetermined intervals; a gas supply unit 240 for supplying gas into the processing container 234; and an exhaust unit 241 for exhausting gas from the processing container 234. A heating unit 242 for heating the interior of the processing container 234 is provided on the outside of the processing container 234.

[0058] The processing container 234 is formed by an inner tube 244 and an outer tube 246. The inner tube 244 is generally cylindrical, with its lower end open on the Z2 side and a top 244A on the Z1 side. The outer tube 246 is also generally cylindrical, with its lower end open on the Z2 side, covering the outside of the inner tube 244, and a top on the Z1 side. The inner tube 244 and the outer tube 246 are made of heat-resistant materials such as quartz and are arranged coaxially along the Z1-Z2 direction to form a double-tube structure.

[0059] The top 244A of the inner tube 244 is, for example, flat. Inside the inner tube 244, a nozzle receiving portion 248 for receiving the gas supply pipe is formed along the Z1-Z2 direction. For example, it could also be, as... Figure 6 As shown, a portion of the sidewall of the inner tube 244 has a protrusion 250 that protrudes outward in the X1 direction, and the interior of the protrusion 250 is configured as a nozzle receiving portion 248. On the sidewall of the inner tube 244 opposite to the nozzle receiving portion 248, i.e., the X2 side, a rectangular exhaust window 252 with a width of L1 is formed along the Z1-Z2 direction.

[0060] The vent 252 is an vent for venting air from the inner tube 244. The length of the vent 252 in the Z1-Z2 direction is formed to be the same as or longer than the length of the substrate holder 238. That is, the upper end of the vent 252 on the Z1 side is formed to be longer on the Z1 side than the position corresponding to the upper end of the substrate holder 238, and the lower end of the vent 252 on the Z2 side is formed to be longer on the Z2 side than the position corresponding to the lower end of the substrate holder 238.

[0061] The lower end of the processing container 234 on the Z2 side is supported by a manifold 254, for example, made of stainless steel and generally cylindrical in shape. A flange 256 is formed at the upper end of the manifold 254 on the Z1 side, and the lower end of the outer tube 246 on the Z2 side is connected to the flange 256. A sealing member 258, such as an O-ring, is provided between the flange 256 and the outer tube 246, and the flange 256 and the outer tube 246 are connected through the sealing member 258. In this embodiment, the area inside the processing container 234 enclosed by the inner tube 244, the manifold 254, and the cover 236 is sometimes described as the interior of the processing container.

[0062] An annular support portion 260 is provided on the inner wall of the upper Z1 side of the manifold 254, and the lower end of the inner tube 244 on the Z2 side is provided on the support portion 260 for support. A cover 236 is installed at the lower end opening on the Z2 side of the manifold 254 through a sealing member 262 such as an O-ring seal. The cover 236 seals and blocks the lower end opening on the Z2 side of the processing container 234, i.e., the opening of the manifold 254. The cover 236 is made of, for example, stainless steel.

[0063] A rotating shaft 266 is provided through the center of the cover 236 via a magnetic fluid sealing part 264. The lower part of the rotating shaft 266 on the Z2 side is rotatably supported on the arm 268A of the lifting part 268, which is composed of a boat lifting mechanism.

[0064] A rotating plate 269 is provided at the upper end of the rotating shaft 266 on the Z1 side. A substrate holder 238 for holding the substrate W is placed on the rotating plate 269 via a quartz insulation stage 270. Therefore, by raising and lowering the arm 268A using the lifting part 268, the cover 236 and the substrate holder 238 can move together in the vertical direction, allowing the substrate holder 238 to move in and out of the processing container 234.

[0065] A gas supply unit 240 is provided in the manifold 254, capable of supplying a first raw material gas, a second raw material gas, and a purge gas into the inner tube 244. The gas supply unit 240 has multiple (e.g., three) quartz gas supply pipes 271, 272, and 273. Each gas supply pipe 271, 272, and 273 has a dispersion nozzle portion 271A, 272A, and 273A along the Z1-Z2 direction inside the inner tube 244. The Z2-direction end of each gas supply pipe 271, 272, and 273 bends in an L-shape towards the X1 side, passes through the manifold 254, and is supported.

[0066] like Figure 6 As shown, gas supply pipes 271, 272, and 273 are arranged circumferentially within the nozzle receiving portion 248 of the inner pipe 244. In each gas supply pipe 271, 272, and 273, a plurality of gas holes 271B, 272B, and 273B are formed at predetermined intervals in the dispersion nozzle portions 271A, 272A, and 273A located inside the inner pipe 244. Each gas hole 271B, 272B, and 273B ejects gas in a substantially horizontal direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the substrate holder 238. Furthermore, the positions of the gas holes 271B, 272B, and 273B of the dispersion nozzle portions 271A, 272A, and 273A in the Z1-Z2 direction are located at the midpoint between adjacent substrates W in the Z1-Z2 direction, enabling efficient supply of gas to the space between the substrates W. However, the specified spacing of the gas holes 271B, 272B, and 273B is not limited to the above. They can also be provided every other substrate W.

[0067] Furthermore, the positions of each gas hole 271B, 272B, and 273B are not limited to the middle position between adjacent substrates W, and can be set to any position such as the same height as the substrate W. Moreover, the orientation of each gas hole 271B, 272B, and 273B can be set to any direction such as towards the center of the substrate W, towards the outer periphery of the substrate W, or towards the inner tube 244.

[0068] A generally cylindrical heating section 242 is provided on the outer periphery of the outer tube 246 in a manner that surrounds the outer tube 246. The heating section 242 can be used to heat the gas contained in the substrate W contained in the processing container 234 and the dispersion nozzles 271A and 272A of the gas supply pipes 271 and 272.

[0069] In this embodiment, a first raw material gas is supplied from gas supply pipe 271, a second raw material gas is supplied from gas supply pipe 272, and purge gas is supplied from gas supply pipe 273. A first raw material gas supply source 276a is connected to gas supply pipe 271 via flow controller 276b and on / off valve 276c. A second raw material gas supply source 277a is connected to gas supply pipe 272 via flow controller 277b and on / off valve 277c. A purge gas supply source 278a is connected to gas supply pipe 273 via flow controller 278b and on / off valve 278c.

[0070] An exhaust pipe 278 is provided above the support portion 260 on the side wall of the upper Z1 side of the manifold 254, and the gas in the inner pipe 244 is exhausted by means of the exhaust window 252 in the space S between the inner pipe 244 and the outer pipe 246.

[0071] The treated gas flowing into the space S through the exhaust window 252 is discharged downwards and upwards via the exhaust pipe 280.

[0072] The exhaust duct 280 has a wall 281, a diverter 282, exhaust ports 283a and 283b, and gas inlets 284a and 284b.

[0073] The wall portion 281 is composed of an inner tube 244 and an outer tube 246.

[0074] A flow divider 282 is disposed inside the wall portion 281, in other words, in the space S between the inner pipe 244 and the outer pipe 246. The flow divider 282 is plate-shaped and connects the outer wall of the inner pipe 244 and the inner wall of the outer pipe 246. The flow divider 282 restricts one exhaust flow path 286a from the exhaust window 252 toward the exhaust pipe 278 only to the lower part, and restricts the other exhaust flow path 286b from the exhaust window 252 toward the exhaust pipe 278 only to the upper part. Thus, for the processed gas flowing into the space S from the exhaust window 252, a portion of the gas from the lower part of the exhaust window 252 is discharged through the exhaust flow path 286a toward the exhaust pipe 278, and the remaining portion is discharged from the upper part of the exhaust window 252 through the exhaust flow path 286b toward the exhaust pipe 278.

[0075] Exhaust port 283a is formed in the space section S below the flow divider 282. Exhaust port 283b is formed in the space section S above the flow divider 282.

[0076] Gas inlet 284a is a gas pipe that passes through manifold 254 and extends into exhaust flow path 286a of space section S. The top of the gas pipe is located at approximately the same height as exhaust port 283a. Ballast gas with controlled flow is supplied from ballast gas supply section 287 to gas inlet 284a. Gas inlet 284a introduces the ballast gas supplied from ballast gas supply section 287 into exhaust flow path 286a.

[0077] Gas inlet 284b is a gas pipe that passes through manifold 254 and extends into exhaust flow path 286b of space section S. The top of the gas pipe is located at approximately the same height as exhaust port 283b. Ballast gas with controlled flow is supplied from ballast gas supply section 287 to gas inlet 284b. Gas inlet 284b guides the ballast gas supplied from ballast gas supply section 287 into exhaust flow path 286b.

[0078] In addition, the ballast gas is an inactive gas such as N2 or Ar.

[0079] In the exhaust duct 280, the processing gas supplied to the inner tube 244 flows into the space S through the exhaust window 252. The processing gas flowing into the space S is discharged through either exhaust port 283a or 283b. At this time, ballast gas is introduced into the interior of the wall portion 281 from the gas inlets 284a and 284b, thereby controlling the flow direction of the exhaust flow path 286a and the flow direction of the exhaust flow path 286b. As a result, the balance between the flow rate of the processing gas discharged through exhaust port 283a and the flow rate of the processing gas discharged through exhaust port 283b can be adjusted. That is, the intensity of upward and downward suction of the processing gas flowing into the exhaust duct 280 through the exhaust window 252 can be adjusted. As a result, the flow rate distribution of the processing gas in the vertical direction (inter-plane direction) within the inner tube 244 can be adjusted.

[0080] For example, increasing the flow rate of ballast gas introduced from gas inlet 284a to exhaust flow path 286a reduces the flow rate of processed gas discharged through exhaust port 283a and increases the flow rate of processed gas discharged through exhaust port 283b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 284a to exhaust flow path 286a increases the flow rate of processed gas discharged through exhaust port 283a and decreases the flow rate of processed gas discharged through exhaust port 283b.

[0081] Additionally, for example, increasing the flow rate of ballast gas introduced from gas inlet 284b to exhaust flow path 286b increases the flow rate of processed gas discharged through exhaust port 283a and decreases the flow rate of processed gas discharged through exhaust port 283b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 284b to exhaust flow path 286b decreases the flow rate of processed gas discharged through exhaust port 283a and increases the flow rate of processed gas discharged through exhaust port 283b.

[0082] The exhaust pipe 278 is connected to the exhaust section 241. The exhaust section 241 is provided with a pressure regulating valve 279a, an exhaust passage 279b, and a vacuum pump 279c in sequence from the exhaust pipe 278, which can perform vacuum exhaust on the inside of the processing container 234.

[0083] In this embodiment, inside the inner tube 244, multiple substrates W are arranged in a Z1-Z2 direction perpendicular to the wafer plane, with the wafer surface of the substrate being parallel to the XY plane. A first raw material gas is ejected from the gas hole 271B of the dispersion nozzle 271A into the space between the substrates W, and a second raw material gas is ejected from the gas hole 272B of the dispersion nozzle 272A into the space between the substrates W. The ejected raw material gas passes through the space between the substrates W and forms a film, while gas that does not contribute to film formation goes from the exhaust window 252 on the X2 side to the outside of the inner tube 244, passes through the space S between the inner tube 244 and the outer tube 246, and is discharged from the exhaust pipe 278.

[0084] The processing apparatus 200 of this embodiment includes a control unit 290. The control unit 290 is, for example, a computer, which controls the overall operation of the processing apparatus 200. Furthermore, the computer program that performs the overall operation of the processing apparatus 200 may also be stored on a storage medium. The storage medium may be, for example, a floppy disk, optical disk, hard disk, flash memory, DVD, etc.

[0085] [Third Implementation]

[0086] Reference Figures 8-10 An example of the processing apparatus 300 according to the third embodiment will be described below. The processing apparatus 300 of the third embodiment differs from the processing apparatus 200 of the second embodiment in that the inner tube 244 is provided with an exhaust pipe 380 arranged to surround the exhaust window 252. Hereinafter, the description will focus on the aspects that differ from the processing apparatus 200 of the second embodiment.

[0087] The exhaust duct 380 is arranged to surround the exhaust window 252. The exhaust duct 380 has a wall portion 381, a baffle plate 382, ​​exhaust ports 383a and 383b, and gas inlets 384a and 384b.

[0088] The wall portion 381 is mounted on the outer wall of the inner tube 244 in a manner that surrounds the exhaust window 252. The wall portion 381 is formed to protrude radially outward from the inner tube 244.

[0089] A diverter plate 382 is disposed inside the wall portion 381. The diverter plate 382 is rectangular and is arranged parallel to the length direction of the exhaust window 252. The diverter plate 382 connects the outer wall of the inner tube 244 and the inner wall of the wall portion 381. The diverter plate 382 extends upward from the bottom 381a of the wall portion 381 and forms a gap 385 between it and the top 381b of the wall portion 381. Thus, for the processed gas flowing into the wall portion 381 from the exhaust window 252, a portion is discharged from the bottom of the exhaust window 252 through the exhaust flow path 386a leading to the exhaust port 383a, and the remaining portion passes through the gap 385 from the top of the exhaust window 252 and is discharged through the exhaust flow path 386b leading to the exhaust port 383b.

[0090] The exhaust port 383a is located in the wall portion 381 below the exhaust window 252. The exhaust port 383a discharges the processed gas that flows into the interior of the wall portion 381 from the exhaust window 252 through the lower part of the exhaust window 252.

[0091] The exhaust port 383b is located on the wall portion 381, separated by the diverter plate 382. The exhaust port 383b discharges the processed gas that flows into the interior of the wall portion 381 from the exhaust window 252 through the top of the exhaust window 252.

[0092] The gas inlet 384a is located on the side of the bottom 381a of the wall portion 381 where the exhaust window 252 is located. However, the gas inlet 384a may also be located on the side portion 381c of the wall portion 381 where the exhaust window 252 is located, at a position lower than the exhaust window 252. Ballast gas with controlled flow rate is supplied from the ballast gas supply unit 387 to the gas inlet 384a. The gas inlet 384a guides the ballast gas supplied from the ballast gas supply unit 387 into the exhaust flow path 386a.

[0093] The gas inlet 384b is located on the side of the bottom 381a of the wall portion 381 where the exhaust window 252 is not provided. However, the gas inlet 384b may also be located on the side portion 381d of the wall portion 381 where the exhaust window 252 is not provided. Alternatively, the gas inlet 384b may be located on the side portion 381c of the wall portion 381 where the exhaust window 252 is provided, at a position above the exhaust window 252. Alternatively, the gas inlet 384b may be located on the top 381b of the wall portion 381. Ballast gas with controlled flow rate is supplied from the ballast gas supply unit 387 to the gas inlet 384b. The gas inlet 384b guides the ballast gas supplied from the ballast gas supply unit 387 into the exhaust flow path 386b.

[0094] Furthermore, the gas inlets 384a and 384b can be either openings formed in the wall portion 381 or gas pipes that penetrate the wall portion 381 and extend into its interior. Additionally, the ballast gas can be, for example, an inert gas such as N2 or Ar.

[0095] In the exhaust duct 380, the processing gas supplied to the inner tube 244 flows into the interior of the wall portion 381 through the exhaust window 252. The processing gas flowing into the interior of the wall portion 381 is discharged through either exhaust port 383a or 383b. At this time, ballast gas is introduced into the interior of the wall portion 381 from the gas inlets 384a and 384b, thereby controlling the flow conductance of the exhaust flow path 386a and the exhaust flow path 386b. As a result, the balance between the flow rate of the processing gas discharged through exhaust port 383a and the flow rate of the processing gas discharged through exhaust port 383b can be adjusted. That is, the intensity of upward and downward suction of the processing gas flowing into the exhaust duct 380 through the exhaust window 252 can be adjusted. As a result, the flow rate distribution of the processing gas in the vertical direction (inter-plane direction) within the inner tube 244 can be adjusted.

[0096] For example, increasing the flow rate of ballast gas introduced from gas inlet 384a to exhaust flow path 386a reduces the flow rate of processed gas discharged through exhaust port 383a and increases the flow rate of processed gas discharged through exhaust port 383b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 384a to exhaust flow path 386a increases the flow rate of processed gas discharged through exhaust port 383a and decreases the flow rate of processed gas discharged through exhaust port 383b.

[0097] Additionally, for example, increasing the flow rate of ballast gas introduced from gas inlet 384b to exhaust flow path 386b increases the flow rate of processed gas discharged through exhaust port 383a and decreases the flow rate of processed gas discharged through exhaust port 383b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 384b to exhaust flow path 386b decreases the flow rate of processed gas discharged through exhaust port 383a and increases the flow rate of processed gas discharged through exhaust port 383b.

[0098] Exhaust ports 383a and 383b are connected to the space section S. Thus, the processed gas passing through exhaust ports 383a and 383b is discharged through the space section S via exhaust section 241. Exhaust section 241 is equipped with a pressure regulating valve 279a, an exhaust passage 279b, and a vacuum pump 279c sequentially from exhaust pipe 278, enabling vacuum exhaust of the interior of the processing container 234.

[0099] [Fourth Implementation]

[0100] Reference Figures 11-12An example of the processing apparatus 400 according to the fourth embodiment will be described below. The processing apparatus 400 of the fourth embodiment differs from the processing apparatus 300 of the third embodiment in that the exhaust port provided at the lower part of the exhaust pipe extends circumferentially along the processing container. Hereinafter, the description will focus on the aspects that differ from the processing apparatus 300 of the third embodiment.

[0101] The exhaust duct 480 is arranged to surround the exhaust window 252. The exhaust duct 480 has a wall 481, a baffle 482, exhaust ports 483a and 483b, and gas inlets 484a and 484b.

[0102] The wall portion 481 is mounted on the outer wall of the inner tube 244 in a manner that surrounds the exhaust window 252. The wall portion 481 is formed to protrude radially outward from the inner tube 244.

[0103] A diverter plate 482 is disposed inside the wall portion 481. The diverter plate 482 is rectangular and is arranged parallel to the length direction of the exhaust window 252. The diverter plate 482 connects the outer wall of the inner tube 244 and the inner wall of the wall portion 481. The diverter plate 482 extends upward from the bottom 481a of the wall portion 481 and forms a gap 485 between it and the top 481b of the wall portion 481. Thus, for the processed gas flowing into the wall portion 481 from the exhaust window 252, a portion is discharged from the bottom of the exhaust window 252 through the exhaust flow path 486a leading to the exhaust port 483a, and the remaining portion passes through the gap 485 from the top of the exhaust window 252 and is discharged through the exhaust flow path 486b leading to the exhaust port 483b.

[0104] An exhaust port 483a is located on the wall portion 481 below the exhaust window 252. The exhaust port 483a extends circumferentially on the lower part of the wall portion 481. The exhaust port 483a discharges the processed gas that flows into the interior of the wall portion 481 from the exhaust window 252 from below the exhaust window 252.

[0105] Exhaust port 483b is located on the wall portion 481, separated by the diverter plate 482. Exhaust port 483b extends circumferentially at the lower part of the wall portion 481. Exhaust port 483b discharges the processed gas flowing into the interior of the wall portion 481 from the exhaust window 252 above the exhaust window 252.

[0106] A gas inlet 484a is provided in the circumferentially extending portion of the exhaust port 483a. This prevents the ballast gas introduced from the gas inlet 484a into the exhaust flow path 486a from diffusing backwards through the exhaust window 252 into the inner tube 244. However, the gas inlet 484a may also be provided on the side of the bottom 481a of the wall portion 481 where the exhaust window 252 is located. Alternatively, the gas inlet 484a may be provided on the side portion 481c of the wall portion 481 where the exhaust window 252 is located, at a position lower than the exhaust window 252. Ballast gas with controlled flow rate is supplied from the ballast gas supply unit 487 to the gas inlet 484a. The gas inlet 484a introduces the ballast gas supplied from the ballast gas supply unit 487 into the exhaust flow path 486a.

[0107] A gas inlet 484b is provided in the circumferentially extending portion of the exhaust port 483b. This prevents the ballast gas introduced from the gas inlet 484b into the exhaust flow path 486b from diffusing backwards through the exhaust window 252 into the inner tube 244. However, the gas inlet 484b may also be provided on the side of the bottom 481a of the wall portion 481 where the exhaust window 252 is not provided. Alternatively, the gas inlet 484b may be provided on the side portion 481d of the wall portion 481 where the exhaust window 252 is not provided. Alternatively, the gas inlet 484b may be provided on the side portion 481c of the wall portion 481 where the exhaust window 252 is provided, at a position above the exhaust window 252. Alternatively, the gas inlet 484b may be provided on the top 481b of the wall portion 481. Ballast gas with controlled flow rate is supplied from the ballast gas supply unit 487 to the gas inlet 484b. The gas inlet 484b introduces the ballast gas supplied from the ballast gas supply unit 487 into the exhaust flow path 486b.

[0108] Furthermore, the gas inlets 484a and 484b can be either openings formed in the wall portion 481 or gas pipes that penetrate the wall portion 481 and extend into its interior. Additionally, the ballast gas can be, for example, an inert gas such as N2 or Ar.

[0109] In the exhaust duct 480, the processing gas supplied to the inner tube 244 flows into the interior of the wall portion 481 through the exhaust window 252. The processing gas flowing into the interior of the wall portion 481 is discharged through either exhaust port 483a or 483b. At this time, ballast gas is introduced into the interior of the wall portion 481 from the gas inlets 484a and 484b, thereby controlling the flow conductance of exhaust flow path 486a and exhaust flow path 486b. As a result, the balance between the flow rate of the processing gas discharged through exhaust port 483a and the flow rate of the processing gas discharged through exhaust port 483b can be adjusted. That is, the intensity of upward and downward suction of the processing gas flowing into the exhaust duct 480 through the exhaust window 252 can be adjusted. As a result, the flow rate distribution of the processing gas in the vertical (inter-plane) direction within the inner tube 244 can be adjusted.

[0110] For example, increasing the flow rate of ballast gas introduced from gas inlet 484a to exhaust flow path 486a reduces the flow rate of processed gas discharged through exhaust port 483a and increases the flow rate of processed gas discharged through exhaust port 483b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 484a to exhaust flow path 486a increases the flow rate of processed gas discharged through exhaust port 483a and decreases the flow rate of processed gas discharged through exhaust port 483b.

[0111] Additionally, for example, increasing the flow rate of ballast gas introduced from gas inlet 484b to exhaust flow path 486b increases the flow rate of processed gas discharged through exhaust port 483a and decreases the flow rate of processed gas discharged through exhaust port 483b. Conversely, decreasing the flow rate of ballast gas introduced from gas inlet 484b to exhaust flow path 486b decreases the flow rate of processed gas discharged through exhaust port 483a and increases the flow rate of processed gas discharged through exhaust port 483b.

[0112] [Analysis Results]

[0113] First, refer to Figure 13 and Figure 14 This describes the results of a computational fluid dynamics (CFD) analysis (hereinafter referred to as "CFD analysis") performed on a processing container with a single-tube structure.

[0114] Figure 13 This is a schematic diagram of the processing device used in the analysis. Figure 13 (a) is a diagram showing the processing container from above. Figure 13 (b) is a diagram showing the exhaust pipe as viewed from the center of the processing container.

[0115] In this analysis, the apparatus corresponding to the processing apparatus 100 of the first embodiment is used, i.e., such as Figure 13 A model of the device with a single-tube structure, as shown in (a), was analyzed. In this analysis, with processing gas supplied from the multiple gas holes 12a of the injector 12 within the processing container 11, the surface distribution of the mass flow rate of the processing gas was analyzed when the flow rate of the ballast gas introduced from the gas inlets 14a and 14b located at the lower part of the exhaust pipe 13 was changed. Furthermore, in this analysis, the exhaust window is formed by multiple exhaust holes 15, and the gas inlets 14a and 14b are correspondingly provided with the exhaust ports 16a and 16b located at the lower part of the exhaust pipe 13. In addition, the number of gas holes 12a was set to 61 (diameter: 0.5 mm), the number of exhaust holes 15 was set to 61 (diameter: 8.0 mm), the processing gas was set to N2, and the ballast gas was set to N2.

[0116] Figure 14 This is a graph showing the inter-surface distribution of the mass flow rate of the processed gas passing through exhaust port 15. Figure 14 In the diagram, the horizontal axis represents the slot number (Slot#) of the exhaust port 15, and the vertical axis represents the mass flow rate (kg / s) of the processed gas. The slot number identifies the exhaust port 15; a smaller slot number indicates that the exhaust port 15 is located on the upper (TOP) side, and a larger slot number indicates that the exhaust port 15 is located on the lower (BTM) side. Additionally, in... Figure 14 In the diagram, the circular marker indicates the result when the ballast gas introduction rate from gas inlet 14a is set to 0 sccm and the ballast gas introduction rate from gas inlet 14b is set to 250 sccm. The diamond marker indicates the result when both the ballast gas introduction rates from gas inlet 14a and 14b are set to 0 sccm. The triangle marker indicates the result when both the ballast gas introduction rates from gas inlet 14a and 14b are set to 250 sccm.

[0117] like Figure 14As shown, changing the amount of ballast gas introduced from gas inlets 14a and 14b alters the distribution of the mass flow rate of the processed gas passing through the exhaust port 15. Specifically, setting the amount of ballast gas introduced from gas inlet 14a to 0 sccm and the amount of ballast gas introduced from gas inlet 14b to 250 sccm results in a significantly higher downward suction tendency (stronger downward suction tendency) of the processed gas mass flow rate on the BTM side compared to the TOP side. Conversely, setting the amount of ballast gas introduced from gas inlet 14a to 0 sccm and the amount of ballast gas introduced from gas inlet 14b to 0 sccm results in a slightly higher downward suction tendency (weaker downward suction tendency) of the processed gas mass flow rate on the BTM side compared to the TOP side. Furthermore, it is known that setting the ballast gas flow rate from gas inlet 14a to 250 sccm and the ballast gas flow rate from gas inlet 14b to 0 sccm results in a greater upward suction tendency for the process gas mass flow rate on the TOP side compared to the BTM side. Based on the above results, it is shown that the tendency to selectively achieve downward and upward suction can be achieved by changing the ballast gas flow rates from gas inlets 14a and 14b.

[0118] Next, refer to Figure 15 and Figure 16 This describes the results of CFD analysis in the case of a processing container with a dual-tube structure.

[0119] Figure 15 This is a schematic diagram of the processing device used in the analysis. Figure 15 (a) is a cross-sectional view of the processing unit, including the processing container and exhaust duct. Figure 15 (b) is a perspective view of the treatment apparatus including the treatment container and exhaust pipe.

[0120] In this analysis, the apparatus corresponding to the processing apparatus 300 of the third embodiment is used, i.e., such as Figure 15A model of the processing container with a dual-tube structure shown in (a) was analyzed. In this analysis, with processing gas supplied from the multiple gas holes 22a of the disperser 22 inside the inner tube 21, the surface distribution of the mass flow rate of the processing gas was analyzed when the flow rate of the ballast gas introduced from the gas inlets 24a and 24b provided at the lower part of the exhaust pipe 23 was changed. Furthermore, in this analysis, the exhaust window is formed by multiple exhaust holes 25, and the gas inlets 24a and 24b are correspondingly provided with the exhaust ports 26a and 26b provided at the lower part of the exhaust pipe 23. In addition, the number of gas holes 22a was set to 61 (diameter: 0.5 mm), the number of exhaust holes 25 was set to 61 (diameter: 8.0 mm), the processing gas was set to N2, and the ballast gas was set to N2.

[0121] Figure 16 This is a graph showing the analysis results of the inter-surface distribution of the mass flow rate of the processed gas passing through exhaust port 25. Figure 16 In the diagram, the horizontal axis represents the slot number (Slot#) of the exhaust port 25, and the vertical axis represents the mass flow rate (kg / s) of the processed gas. The slot number identifies the exhaust port 25; a smaller slot number indicates that the exhaust port 25 is located on the upper (TOP) side, and a larger slot number indicates that the exhaust port 25 is located on the lower (BTM) side. Additionally, in... Figure 16 In the diagram, the diamond-shaped marker indicates the result when the ballast gas introduction rate from gas inlet 24a is set to 0 sccm and the ballast gas introduction rate from gas inlet 24b is also set to 0 sccm. The triangle-shaped marker indicates the result when the ballast gas introduction rate from gas inlet 24a is set to 250 sccm and the ballast gas introduction rate from gas inlet 24b is also set to 0 sccm.

[0122] like Figure 16As shown, changing the amount of ballast gas introduced from gas inlets 24a and 24b alters the distribution of the mass flow rate of the processed gas passing through the exhaust port 25. Specifically, setting the amount of ballast gas introduced from gas inlet 24a to 0 sccm and the amount of ballast gas introduced from gas inlet 24b to 0 sccm results in a downward suction tendency with a larger mass flow rate of the processed gas on the BTM side compared to the TOP side. Furthermore, setting the amount of ballast gas introduced from gas inlet 24a to 250 sccm and the amount of ballast gas introduced from gas inlet 24b to 0 sccm results in an upward suction tendency with a larger mass flow rate of the processed gas on the TOP side compared to the BTM side. Based on these results, it is demonstrated that the tendency to selectively achieve downward and upward suction can be achieved by changing the amount of ballast gas introduced from gas inlets 24a and 24b.

[0123] Furthermore, in the above embodiments, gas inlets 184a, 284a, 384a, and 484a are examples of a first gas inlet, and gas inlets 184b, 284b, 384b, and 484b are examples of a second gas inlet. Additionally, exhaust flow paths 186a, 286a, 386a, and 486a are examples of a first exhaust flow path, and exhaust flow paths 186b, 286b, 386b, and 486b are examples of a second exhaust flow path.

[0124] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

Claims

1. A processing apparatus, wherein, The processing device includes: A processing container having a cylindrical shape, the processing container being able to accommodate multiple substrates arranged at intervals along its own length; A gas supply pipe that supplies gas into the processing container; An exhaust window, extending along the length of the processing container, allows the gas to be discharged from the processing container; and An exhaust duct forms a first exhaust flow path and a second exhaust flow path. The first exhaust flow path discharges a portion of the gas discharged through the exhaust window from one side of the exhaust window along its length. The second exhaust flow path discharges the remaining gas discharged through the exhaust window from the other side of the exhaust window along its length. The exhaust pipe has: A first gas inlet section, which introduces ballast gas into the first exhaust flow path; and The second gas inlet section introduces ballast gas into the second exhaust flow path. The ballast gas introduced from the first gas inlet and the second gas inlet flows along the length of the processing container, and The exhaust duct is arranged in a manner that surrounds the exhaust window in the body of the processing container.

2. The processing apparatus according to claim 1, wherein, The exhaust window includes a rectangular exhaust slit extending along the length of the processing container.

3. The processing apparatus according to claim 1 or 2, wherein, The exhaust window includes a plurality of exhaust holes spaced apart along the length of the processing container.

4. The processing apparatus according to claim 1 or 2, wherein, The processing container has a single-tube structure, with the exhaust window formed on its outer wall. The exhaust pipe has: A wall portion, which is mounted to the outer wall of the processing container in a manner that surrounds the exhaust window; and A diverter plate, located inside the wall, diverts the gas discharged from the exhaust window to the first exhaust flow path and the second exhaust flow path.

5. The processing apparatus according to claim 4, wherein, The diverter plate is arranged parallel to the length direction of the exhaust window.

6. The processing apparatus according to claim 5, wherein, The diverter plate extends upward from the bottom of the wall and forms a gap between it and the top of the wall.

7. The processing apparatus according to claim 1 or 2, wherein, The processing container has a double-tube structure comprising an inner tube and an outer tube. The exhaust window is formed on the outer wall of the inner tube, and an exhaust pipe is connected to the outer tube for exhausting the gas between the inner tube and the outer tube. The exhaust pipe has a diverter that splits the gas discharged from the exhaust window into the first exhaust flow path and the second exhaust flow path.

8. The processing apparatus according to claim 7, wherein, The diverter plate is arranged parallel to the length direction of the exhaust window.

9. The processing apparatus according to claim 8, wherein, The diverter forms a gap in the upper part of the space between the inner pipe and the outer pipe on one side of the space from the exhaust window to the exhaust pipe, and the diverter forms a gap in the lower part of the space on the other side of the space.

10. The processing apparatus according to claim 1 or 2, wherein, The processing container has a double-tube structure comprising an inner tube and an outer tube, with the exhaust window formed on the outer wall of the inner tube. The exhaust pipe has: A wall portion, which is installed on the outer wall of the inner tube in a manner that surrounds the exhaust window; and A diverter plate, located inside the wall, diverts the gas discharged from the exhaust window to the first exhaust flow path and the second exhaust flow path.

11. The processing apparatus according to claim 10, wherein, The diverter plate is arranged parallel to the length direction of the exhaust window.

12. The processing apparatus according to claim 11, wherein, The diverter plate extends upward from the bottom of the wall and forms a gap between it and the top of the wall.

13. The processing apparatus according to claim 12, wherein, The wall portion forms the first exhaust flow path and the second exhaust flow path at its lower portion, extending circumferentially along the processing container. The first gas inlet introduces the ballast gas into the extended portion of the first exhaust flow path. The second gas inlet introduces the ballast gas into the extended portion of the second exhaust flow path.

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