Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus that processes a substrate, wherein the substrate processing apparatus has: a substrate conveying mechanism that holds one face of the substrate and conveys it; and a cleaning mechanism that is provided below a conveying path through which the substrate conveying mechanism conveys the substrate, cleans the other face of the substrate, the cleaning mechanism having: a water-absorbing roller configured to be rotatable by a driving mechanism, and provided with a water-absorbing layer at least in a surface layer of a peripheral surface; a cleaning liquid nozzle that supplies a cleaning liquid to the water-absorbing roller; and a pressing roller provided at a position downstream of the cleaning liquid nozzle in a rotation direction of the water-absorbing roller, configured to be movable in an approach-escape direction with respect to the water-absorbing roller, and cleans the other face of the substrate by bringing the water-absorbing roller into contact with the other face of the substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and a substrate processing method. BACKGROUND

[0002] In Patent Literature 1, it is disclosed that, in a grinding apparatus provided with a cleaning roller that cleans a workpiece after grinding, a rotation direction of the cleaning roller is changed in accordance with a relative position between a chuck that adsorbs and conveys the workpiece and the cleaning roller. The cleaning roller is provided on a delivery path through which the workpiece is delivered by the chuck.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2005-302831 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application is to appropriately clean a substrate before or after grinding processing.

[0008] SOLUTION TO PROBLEM

[0009] One technical solution of the present disclosure is a substrate processing apparatus that processes a substrate, wherein the substrate processing apparatus has: a substrate conveying mechanism that holds one face of the substrate and conveys the substrate; and a cleaning mechanism that is provided below a conveying path through which the substrate conveying mechanism conveys the substrate, cleans the other face of the substrate, the cleaning mechanism has: a water-absorbing roller that is configured to be rotatable by a driving mechanism, and has a water-absorbing layer at least in a surface layer of a peripheral surface; a cleaning liquid nozzle that supplies a cleaning liquid to the water-absorbing roller; and a pressing roller that is provided at a position downstream of the cleaning liquid nozzle in a rotation direction of the water-absorbing roller, and is configured to be movable in an approach-avoidance direction with respect to the water-absorbing roller, and cleans the other face of the substrate by bringing the water-absorbing roller into contact with the other face of the substrate.

[0010] EFFECT OF THE INVENTION

[0011] According to the present application, a substrate before or after grinding processing can be appropriately cleaned. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example of a stacked wafer.

[0013] Figure 2 is a schematic top view showing a structure of a wafer processing system of the present embodiment. is a side view showing a structure example

[0014] Figure 3 is a flowchart showing main processes of wafer processing.

[0015] Figure 4 is a sectional view showing a structure example of a back surface cleaning device of the present embodiment.

[0016] Figure 5 is a plan view showing a structure example of a back surface cleaning device of the present embodiment.

[0017] Figure 6 is a flowchart showing main processes of back surface cleaning of the present embodiment.

[0018] Figure 7 is an explanatory view showing main processes of back surface cleaning of the present embodiment.

[0019] Figure 8 is an explanatory view showing main processes of back surface cleaning of the present embodiment.

[0020] Figure 9 is a sectional view showing a structure example of a back surface cleaning device of another embodiment. DETAILED DESCRIPTION

[0021] In a manufacturing process of a semiconductor device, there is an operation of thinning a first wafer by grinding a back surface of the first wafer on which a plurality of devices such as electronic circuits are formed on a surface. Then, if the thinned first wafer is directly transported or subjected to a subsequent process, warping or cracking can occur in the first wafer. Therefore, in order to strengthen the first wafer, there is an operation of, for example, bonding the first wafer to a support wafer (hereinafter referred to as "second wafer") to form a stacked wafer (hereinafter referred to as "stacked wafer").

[0022] In grinding the back surface of the first wafer described above, generally, a grinding wheel is brought into contact with the back surface of the first wafer while the back surface of the second wafer is held by a chuck. However, in the case where the back surface of the first wafer is ground like this, there is a case where grinding chips generated by grinding and cleaning liquid supplied toward the first wafer at the time of grinding intrude into the back surface side of the second wafer and adhere. Then, in the case where grinding chips and cleaning liquid adhere like this, there is a case where the grinding chips and cleaning liquid adhering to the back surface of the second wafer are scattered and dripped to cause contamination in a module at the time of transporting the stacked wafer.

[0023] The grinding device described in Patent Document 1 above is a device provided with a cleaning member for cleaning the back surface of the second wafer (work) after grinding in order to suppress scattering of grinding chips like this. However, in this grinding device, a cleaning roller that comes into contact with the back surface of the second wafer is supplied with cleaning liquid, whereby the cleaning roller is brought into contact with the back surface of the second wafer in a state in which it has absorbed the cleaning liquid, and thus there is a case in which the back surface of the second wafer cannot be cleaned properly. Specifically, since the cleaning roller is in a state in which it has absorbed the cleaning liquid, in a case in which the back surface of the second wafer has been cleaned using this cleaning roller, there is a case in which the cleaning liquid remains on the back surface of the second wafer. Thus, in a case in which cleaning liquid that has adhered like this does not become completely absorbed and remains on the back surface of the second wafer, the remaining cleaning liquid can scatter, drip, and become a cause of contamination inside the module.

[0024] The technology of the present disclosure properly cleans the substrate before or after the grinding process. Specifically, when the substrate before or after the grinding process is cleaned, the cleaning liquid is properly inhibited from remaining on the cleaned substrate. Hereinafter, with reference to the drawings, a wafer processing system as a substrate processing device and a wafer processing method as a substrate processing method of the present embodiment will be described. Furthermore, in the present specification and the drawings, the same reference numerals are assigned to elements having substantially the same functional structure, and thus repeated description is omitted.

[0025] In the wafer processing system 1 of the present embodiment described later, as shown in Figure 1 , a wafer T that is a coincident substrate in which a first wafer W that is a first substrate and a second wafer S that is a second substrate are joined is processed. Also, in the wafer processing system 1, the back surface Wb of the first wafer W is ground to be thinned. Hereinafter, in the first wafer W, the surface of the side joined to the second wafer S is referred to as a surface Wa, and the ground surface of the side opposite to the surface Wa is referred to as a back surface Wb that is one surface. Also, in the second wafer S, the surface of the side joined to the first wafer W is referred to as a surface Sa, and the surface of the side opposite to the surface Sa is referred to as a back surface Sb that is the other surface.

[0026] The first wafer W is, for example, a semiconductor wafer such as a silicon substrate, and a device layer D including a plurality of devices is formed on the surface Wa. A surface film Fw is also formed on the device layer D, and is joined to a surface film Fs of the second wafer S via the surface film Fw. As the surface film Fw, for example, an oxide film (SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive, and the like are exemplified. Furthermore, the peripheral edge portion We of the first wafer W is subjected to chamfer processing, and the thickness of the cross section of the peripheral edge portion We becomes smaller toward the tip end thereof.

[0027] The second wafer S is, for example, a wafer that supports the first wafer W. A surface film Fs is formed on the surface Sa of the second wafer S, and the periphery of the second wafer S is chamfered. Examples of surface films Fs include oxide films (SiO2 films, TEOS films), SiC films, SiCN films, or adhesives. Furthermore, the second wafer S functions as a protective element (support wafer) that protects the device layer D of the first wafer W. Alternatively, the second wafer S does not need to be a support wafer; it can be a device wafer with a device layer formed similarly to the first wafer W. In this case, the surface film Fs is formed on the surface Sa of the second wafer S across the device layer.

[0028] Furthermore, in the accompanying drawings used in the following description, to avoid clutter, the illustrations of device layer D and surface films Fw and Fs are sometimes omitted.

[0029] like Figure 2 As shown, the wafer processing system 1 has a structure that integrates the infeed / outfeed station 2 and the processing station 3. The infeed / outfeed station 2, for example, feeds and outputs to a box Ct capable of holding multiple overlapping wafers T between the infeed station and the outside. The processing station 3 is equipped with various processing devices for performing prescribed processing on the overlapping wafers T.

[0030] A box-loading platform 10 is provided at the inlet / outlet station 2. In the illustrated example, multiple boxes, such as three boxes Ct, can be freely loaded onto the box-loading platform 10 in a row along the Y-axis direction. Furthermore, the number of boxes Ct loaded onto the box-loading platform 10 is not limited to this embodiment and can be arbitrarily determined.

[0031] In the infeed / outfeed station 2, a wafer transport device 20 is provided adjacent to the cassette stage 10 on the negative X-axis side. The wafer transport device 20 is configured to move freely along a transport path 21 extending along the Y-axis. Furthermore, the wafer transport device 20 has, for example, two transport arms 22, 22 for holding and transporting overlapping wafers T. Each transport arm 22 is configured to move freely in the horizontal direction, in the vertical direction, about a horizontal axis, and about a vertical axis. Moreover, the structure of the transport arm 22 is not limited to this embodiment, and any structure can be adopted. Thus, the wafer transport device 20 is configured to transport overlapping wafers T relative to the cassette stage 10 and the transport device 30 described later.

[0032] In the infeed / outfeed station 2, on the negative X-axis side of the wafer transport device 20, there is a conveying device 30 for transferring overlapping wafers T adjacent to the wafer transport device 20.

[0033] For example, processing station 3 is provided with 3 processing modules G1 to G3. The first processing module G1, the second processing module G2 and the third processing module G3 are arranged in sequence from the positive X-axis direction side (the side of the feed-in and feed-out stations 2) to the negative direction side.

[0034] In the first processing module G1, there are provided an etching device 40 which etches the ground surface of the first wafer W ground by the processing device 80 described later, a cleaning device 41 which cleans the ground surface of the first wafer W, and a wafer conveying device 50. The etching device 40 and the cleaning device 41 are stacked. Further, the number and arrangement of the etching device 40 and the cleaning device 41 are not limited to this. For example, the etching device 40 and the cleaning device 41 can be respectively placed in line in the X-axis direction. Further, these etching device 40 and cleaning device 41 can be respectively stacked.

[0035] The wafer conveying device 50 is provided, for example, on the Y-axis negative direction side of the etching device 40 and the cleaning device 41. The wafer conveying device 50 has, for example, two conveying arms 51, 51 which hold and convey the stacked wafer T. Each conveying arm 51 is configured to be freely movable in the horizontal direction, in the vertical direction, around the horizontal axis, and around the vertical axis. Further, the structure of the conveying arm 51 is not limited to the present embodiment, and any structure can be employed. Thus, the wafer conveying device 50 is configured to be able to convey the stacked wafer T with respect to the transfer device 30, the etching device 40, the cleaning device 41, and the alignment device 60 described later.

[0036] In the second processing module G2, there are provided the alignment device 60 which adjusts the orientation of the first wafer W in the horizontal direction before the grinding process, and a wafer conveying device 70.

[0037] The wafer conveying device 70 as a substrate conveying mechanism is provided, for example, on the Y-axis positive direction side of the alignment device 60. The wafer conveying device 70 has, for example, two conveying arms 71, 71 which adsorb and hold the stacked wafer T by an adsorption holding surface 71a and convey it. Each conveying arm 71 is supported to a multi-joint arm member 72 and is configured to be freely movable in the horizontal direction, in the vertical direction, around the horizontal axis, and around the vertical axis. Further, the structure of the conveying arm 71 is not limited to the present embodiment, and any structure can be employed. Thus, the wafer conveying device 70 is configured to be able to convey the stacked wafer T with respect to the etching device 40, the cleaning device 41, the alignment device 60, and the processing device 80 described later.

[0038] In the third processing module G3, there are provided the processing device 80 and a back surface cleaning device 90.

[0039] The processing device 80 has a rotary table 81. On the rotary table 81, there are provided four chucks 82 which adsorb and hold the stacked wafer T. The four chucks 82 are movable to the handover position A0 and the processing positions Al to A3 by the rotation of the rotary table 81 around the center line 83 of rotation. In addition, each of the four chucks 82 is configured to be rotatable around the vertical axis by a rotation mechanism (not shown).

[0040] In the handover position A0, the handover of the superposed wafer T is performed by the wafer conveying device 70. In the processing position Al, a rough grinding unit 84 is arranged, and rough grinding is performed on the first wafer W. In the processing position A2, a middle grinding unit 85 is arranged, and middle grinding is performed on the first wafer W. In the processing position A3, a fine grinding unit 86 is arranged, and fine grinding is performed on the first wafer W. Further, in the handover position A0, cleaning of the back surface Wb of the first wafer W after the grinding processing in the processing positions Al to A3 is also performed.

[0041] A back surface cleaning device 90 as a cleaning mechanism is arranged below the conveying path for conveying the superposed wafer T by the wafer conveying device 70 in the third processing module G3, specifically, on the X-axis positive direction side of the handover position A0. In the back surface cleaning device 90, the back surface Sb of the second wafer S after the grinding processing is cleaned. Further, the detailed structure of the back surface cleaning device 90 is described later.

[0042] In the above wafer processing system 1, a control device 100 is provided. The control device 100 is, for example, a computer, and has a program storage section (not shown). In the program storage section, a program for controlling the processing of the superposed wafer T in the wafer processing system 1 is stored. Further, in the program storage section, a program for controlling the operation of the drive system of the above-described various processing devices, conveying devices, and the like to realize the wafer processing described later in the wafer processing system 1 is also stored. Further, the above-described program can be stored in a storage medium H readable by the computer, and loaded from the storage medium H to the control device 100.

[0043] Next, the wafer processing using the wafer processing system 1 configured as above is described. Further, in the present embodiment, the superposed wafer T in which the first wafer W and the second wafer S are joined is formed in advance in a joining device (not shown) outside the wafer processing system 1.

[0044] First, the cassette Ct in which a plurality of superposed wafers T are accommodated is placed on the cassette placement table 10 of the in-out station 2. Next, the superposed wafers T in the cassette Ct are taken out by the wafer conveying device 20, and conveyed to the transfer device 30.

[0045] Next, the superposed wafer T of the transfer device 30 is taken out by the wafer conveying device 50, and conveyed to the alignment device 60. In the alignment device 60, the position of the first wafer W in the horizontal direction (step S1) is adjusted. Figure 3

[0046] Next, the superposed wafer T whose orientation in the horizontal direction is adjusted is conveyed from the alignment device 60 to the processing device 80 by the wafer conveying device 70.

[0047] ​The stacked wafer T conveyed to the processing device 80 is handed over to the chuck 82 at the handover position A0. Next, the rotary table 81 is rotated, and the chuck 82 is moved to the processing positions Al to A3 in turn.

[0048] At the processing position Al, the back surface Wb of the first wafer W is rough-ground by the rough grinding unit 84 (step S2 of the processing). Figure 3

[0049] At the processing position A2, the back surface Wb of the first wafer W is medium-ground by the medium grinding unit 85 (step S3 of the processing). Figure 3

[0050] At the processing position A3, the back surface Wb of the first wafer W is fine-ground by the fine grinding unit 86 (step S4 of the processing). Figure 3

[0051] When the first wafer W is thinned to the desired thickness by the grinding process, the chuck 82 is then moved to the handover position A0. Next, the stacked wafer T moved to the handover position A0 is started to be conveyed toward the cleaning device 41 by the wafer conveying device 70.

[0052] Here, below the conveying path of the stacked wafer T in the third processing module G3, more specifically, below the conveying path of the stacked wafer T from the handover position A0 to the cleaning device 41, a back surface cleaning device 90 for cleaning the back surface Sb of the second wafer S is provided.

[0053] Then, in the wafer processing of the present embodiment, the back surface Sb of the second wafer S of the stacked wafer T during the conveying process from the handover position A0 to the cleaning device 41 by the wafer conveying device 70 is cleaned (step S5 of the processing). Further, the detailed cleaning method of the back surface Sb of the second wafer S by the back surface cleaning device 90 is described later. Figure 3

[0054] The stacked wafer T whose back surface Sb of the second wafer S is cleaned by the back surface cleaning device 90 is fed to the cleaning device 41. At the cleaning device 41, the ground surface (back surface Wb) of the first wafer W is scrubbed (step S6 of the processing). Further, at the cleaning device 41, the back surface Sb of the second wafer S can be further cleaned together with the ground surface of the first wafer W. Figure 3

[0055] Next, the stacked wafer T is conveyed to the etching device 40 by the wafer conveying device 50. At the etching device 40, the ground surface (back surface Wb) of the first wafer W is wet-etched by a chemical liquid (step S7 of the processing). Figure 3

[0056] ​​​​​​Subsequently, the overlapping wafer T, which has undergone all processing, is transported to the transfer device 30 using the wafer transfer device 50, and then to the cassette Ct of the cassette stage 10 using the wafer transfer device 20. In this way, the series of wafer processing in the wafer processing system 1 is completed.

[0057] Furthermore, in the above wafer processing, the cleaning of the back surface Sb of the second wafer S is performed after the grinding process of the processing apparatus 80, but the cleaning of the back surface Sb may also be performed, for example, during the transport process from the self-aligning device 60 to the processing apparatus 80 before the grinding process of the overlapping wafer T.

[0058] Next, the detailed structure of the back-side cleaning device 90 described above will be explained. Furthermore, in the following explanation, to avoid unnecessary complexity, the cleaning fluid used during the grinding of the back-side Wb in the processing device 80 and adhering to the back-side Sb will sometimes be referred to as "cleaning fluid 80w," and the cleaning fluid used during the cleaning of the back-side Sb in the back-side cleaning device 90 will be referred to as "cleaning fluid 90w." Additionally, the grinding chips adhering to the back-side Sb during the grinding of the back-side Wb in the processing device 80 and the cleaning fluid 80w may sometimes be collectively referred to as "grind chips, etc."

[0059] like Figure 4 and Figure 5 As shown, the back-side cleaning device 90 includes a cleaning roller 91, a cleaning fluid nozzle 92, and a pressing roller 93. Furthermore, the entire circumference and top of these cleaning rollers 91, cleaning fluid nozzles 92, and pressing rollers 93 are covered by a cover 94, which prevents the cleaning fluid 90w ejected from the cleaning fluid nozzles 92 and grinding debris removed from the back-side Sb during cleaning of the second wafer S from scattering outwards. Additionally, a water tank 95 is provided below the cover 94 to receive and discharge the cleaning fluid 90w and grinding debris.

[0060] The cleaning roller 91, which serves as an absorbent roller, is made of a component, such as a sponge material, whose surface layer is at least absorbent. The cleaning roller 91 is formed to be at least longer than the diameter of the second wafer S in the longitudinal direction. The cleaning roller 91 is provided such that its upper part protrudes from the opening 94a of the cover 94 (described later), and this protrusion contacts the back surface Sb of the second wafer S transported above the back surface cleaning device 90, thereby removing grinding chips and the like attached to the back surface Sb. Furthermore, grinding chips and the like refer to the grinding chips and cleaning fluid 80w that adhere to the back surface Wb of the first wafer W during grinding in the processing device 80, as described above.

[0061] Furthermore, the cleaning roller 91 is configured to rotate freely about an axis in the length direction using a drive mechanism 91a (e.g., a servo motor). The rotation direction of the cleaning roller 91 can be changed arbitrarily.

[0062] The cleaning liquid nozzle 92 is provided on the side of the downstream side of the cleaning position of the back surface Sb in the rotation direction of the cleaning roller 91, for example, the side of the cleaning roller 91, opposite to the peripheral surface of the cleaning roller 91. The cleaning liquid nozzle 92 has a plurality of cleaning liquid supply holes (not shown) in the length direction of the cleaning roller 91, for example, and is capable of supplying the cleaning liquid 90w with respect to the entire length in the length direction of the cleaning roller 91. Further, the cleaning liquid nozzle 92 supplies the cleaning liquid 90w to the cleaning roller 91, thereby causing the cleaning roller 91 to absorb the cleaning liquid, and removing the grinding chips and the like adhered to the peripheral surface of the cleaning roller 91 due to the cleaning of the back surface Sb. In addition, the cleaning liquid 90w can use pure water, for example.

[0063] In the up-and-down direction of the cleaning liquid nozzle 92, a shielding plate 96, 97 for preventing the scattering and transmission of the cleaning liquid 90w and the cleaning liquid 80w is provided along the spray direction of the cleaning liquid 90w, respectively. The shielding plate 96 and the shielding plate 97 are each provided on the side of the cleaning roller 91, and the end portion is close to the cleaning roller 91 to such an extent that the cleaning liquid 80w, 90w does not pass through the gap between the cleaning roller 91 and the shielding plate 96, 97.

[0064] The shielding plate 96 is provided above the cleaning liquid nozzle 92, and suppresses the cleaning liquid 90w sprayed from the cleaning liquid nozzle 92 from adhering to the back surface Sb of the second wafer S cleaned by the cleaning roller 91. The shielding plate 97 is provided below the cleaning liquid nozzle 92, and suppresses the cleaning liquid 90w (contaminated water) sprayed from the cleaning liquid nozzle 92 and cleaned with respect to the cleaning roller 91, and the cleaning liquid 80w removed by the cleaning, from being transmitted to the pressing roller 93 described later. In addition, a hole portion (not shown) for discharging the cleaning liquid 90w, the cleaning liquid 80w, and the contaminated water to the water tank 95 is formed in the shielding plate 97.

[0065] The pressing roller 93 is provided at least at a position on the downstream side of the cleaning liquid nozzle 92, for example, below the cleaning roller 91, in the rotation direction of the cleaning roller 91. The pressing roller 93 is configured to be movable with respect to the cleaning roller 91 in the approach-avoidance direction (in the example shown in the drawing, the up-and-down direction) by a driving mechanism 93a (for example, an air cylinder), and thereby configured to be pressable with respect to the cleaning roller 91. Thus, the pressing roller 93 presses the cleaning roller 91 which has absorbed the cleaning liquid due to the cleaning of the back surface Sb and the cleaning liquid nozzle 92, thereby extruding the cleaning liquid 90w contained in the cleaning roller 91, and thereby reducing the amount of absorption of the cleaning roller 91 to a desired value, for example, a value at which the cleaning liquid 80w adhered to the back surface Sb can be properly absorbed. Further, in the case where the contaminated water at the time of cleaning remains in the cleaning roller 91 cleaned by the cleaning liquid nozzle 92, the contaminated water can be simultaneously extruded by the pressing roller 93. Therefore, it is possible to cause the cleaning roller 91 to perform the cleaning of the back surface Sb again in a clean state in which the contaminated water is extruded.

[0066] The cover 94 is provided to house and cover the cleaning roller 91, the cleaning fluid nozzle 92 and the squeeze roller 93, thereby preventing the cleaning fluid 90w used in the back cleaning device 90 and the grinding chips removed by cleaning from scattering to the surroundings, i.e. to the outside of the back cleaning device 90.

[0067] An opening 94a is formed on the upper surface of the cover 94. As described above, the upper part of the cleaning roller 91 protrudes from the opening 94a, and the protrusion contacts the back surface Sb of the second wafer S passing above the back surface cleaning device 90, thereby cleaning the back surface Sb.

[0068] In addition, an exhaust mechanism 94b is connected to the cover 94 for venting air from the interior of the cover 94. The exhaust mechanism 94b reduces the internal humidity by venting air from the interior of the cover 94, thereby preventing malfunctions caused by moisture in drive systems such as drive mechanism 91a and drive mechanism 93a.

[0069] A water tank 95 is located below the cover 94, specifically below the cleaning roller 91, the cleaning fluid nozzle 92, and the squeeze roller 93. The cleaning fluid 90w, contaminated water, and removed grinding debris are discharged from the back cleaning device 90 through a drain port 95a located at the bottom. The water tank 95 is formed to a depth such that the squeeze roller 93 does not come into contact with the discharged fluid from the water tank 95 during its descent.

[0070] Next, the cleaning method for the back side Sb using the back side cleaning device 90 configured as described above will be explained.

[0071] When cleaning the back side Sb of the second wafer S, the back side Sb in the back side cleaning apparatus 90 is prepared for cleaning before the overlapping wafer T passes over the back side cleaning apparatus 90.

[0072] During cleaning preparation, such as Figure 7 As shown in (a), the cleaning roller 91 is rotated by the drive mechanism 91a. Figure 6 Step P1). In this embodiment, the rotation direction of the cleaning roller 91 is forward relative to the conveying direction of the overlapping wafer T.

[0073] When the rotation of the cleaning roller 91 begins, then, as Figure 7 As shown in (b), cleaning fluid 90w is initially supplied from cleaning fluid nozzle 92 toward cleaning roller 91. Figure 6 Step P2). The cleaning roller 91 absorbs the cleaning liquid from the cleaning liquid nozzle 92, forming at least a first water absorption area 91w on the surface of the cleaning roller 91.

[0074] Cleaning fluid 90w is supplied to the cleaning roller 91. When the cleaning roller 91 has fully absorbed the cleaning fluid, then... Figure 7As shown in (c), the extrusion roller 93 is raised by the drive mechanism 93a and pressed against the cleaning roller 91. Figure 6 (Step P3). By pressing the squeeze roller 93 against the cleaning roller 91 in this way, the cleaning liquid 90w contained in the cleaning roller 91 is squeezed out of the cleaning roller 91. Downstream of the squeeze roller 93 in the rotation direction of the cleaning roller 91, the amount of water absorbed by the cleaning liquid 90w in the cleaning roller 91 decreases. In addition, in this embodiment, the squeeze roller 93 does not have a rotating mechanism, but rotates with the cleaning roller 91 by pressing against it.

[0075] Then, when a first water-absorbing region 91w (from the cleaning liquid nozzle 92 to the squeeze roller 93 in the rotational direction of the cleaning roller 91) and a second water-absorbing region 91d (from the squeeze roller 93 to the cleaning liquid nozzle 92 in the rotational direction of the cleaning roller 91) are formed in the circumferential direction of the cleaning roller 91, the cleaning preparation of the back side Sb in the back side cleaning device 90 is completed. Furthermore, the second water-absorbing region 91d indicates a state where the water absorption of the cleaning roller 91 is reduced to a desired value by the squeeze roller 93, specifically a value that allows for the appropriate absorption and removal of the cleaning liquid 80w adhering to the back side Sb.

[0076] When the cleaning preparation in the back-side cleaning unit 90 is completed, the overlapping wafer T, which has undergone grinding in the processing unit 80, is then transported from the processing unit 80 to the cleaning unit 41. Figure 6 (Step P4). At this time, a back-side cleaning device 90, which has completed the cleaning preparation in step P3, is arranged below the transport path of the overlapping wafer T to clean the back-side Sb of the second wafer S of the overlapping wafer T during the transport process.

[0077] Here, the wafer transport device 70 maintains the holding height of the overlapping wafer T at a height that contacts the upper part of the cleaning roller 91 protruding from the opening 94a of the cover 94 during the transport process. Thus, as... Figure 7 As shown in (d), the back surface Sb of the second wafer S, transported by the wafer transport device 70, contacts the upper part of the cleaning roller 91 when passing above the back surface cleaning device 90, removing grinding debris and other contaminants adhering to the back surface Sb, thus performing cleaning. Figure 6 (Step P5). Additionally, at this time, the area in contact with the back surface Sb is the second water-absorbing area 91d of the cleaning roller 91 formed in step P3.

[0078] Specifically, the grinding chips attached to the back surface Sb are adsorbed to a hole portion (not shown) of the cleaning roller 91, for example, made of a sponge material, or directly fall into the inside of the water tank 95 to be removed. In addition, the cleaning liquid 80w attached to the back surface Sb is absorbed by the cleaning roller 91 having water absorbency. Also, in the back surface cleaning device 90 of the present embodiment, the back surface Sb contacts the 2nd water absorbing region 91d, in other words, the water absorbing amount of the cleaning roller 91 contacting the back surface Sb is reduced by the pressing roller 93, and thus the cleaning liquid 80w attached to the back surface Sb is properly absorbed and removed by the cleaning roller 91.

[0079] Here, when the back surface Sb is cleaned by the cleaning roller 91, as shown in (d) of FIG. 9, the 2nd water absorbing region 91d contacts the back surface Sb, and thus a contaminated region 91p is formed on the peripheral surface of the cleaning roller 91 (from the contact portion with the back surface Sb to the cleaning liquid nozzle 92 in the rotation direction of the cleaning roller 91). Specifically, the 2nd water absorbing region 91d formed by the pressing roller 93 contacts the back surface Sb, and thus the grinding chips and the like attached to the back surface Sb are adsorbed and absorbed by the cleaning roller 91, causing contamination. Figure 7

[0080] After that, the contaminated region 91p of the cleaning roller 91 formed is removed of the grinding chips and the like by the spraying of the cleaning liquid 90w from the cleaning liquid nozzle 92, and thus is cleaned (step P6 of (d) of FIG. 9). That is, at the time of cleaning of the back surface Sb, the cleaning liquid nozzle 92 functions as a self-cleaning nozzle of the cleaning roller 91 in the back surface cleaning device 90. In addition, the grinding chips and the like removed by the spraying of the cleaning liquid 90w from the cleaning liquid nozzle 92 are removed, for example, by falling into the inside of the water tank 95. Figure 6

[0081] Here, in the case where contaminated water generated by the cleaning of the contaminated region 91p of the cleaning roller 91 is transferred to the pressing roller 93, the pressing roller 93 is contaminated by the contaminated water, and thus the 2nd water absorbing region 91d pressed by the pressing roller 93 is contaminated, as a result, it can not be possible to properly clean the back surface Sb. However, according to the present embodiment, the shielding plate 97 is provided below the cleaning liquid nozzle 92, and the transfer of the contaminated water to the pressing roller 93 is suppressed. That is, according to the present embodiment, it is possible to properly clean the back surface Sb of the 2nd wafer S. Furthermore, the contaminated water generated is guided to the water tank 95 by the above-described hole portion (not shown) provided to the shielding plate 97 and is removed.

[0082] As shown in (d) of FIG. 9, the contaminated region 91p cleaned by the cleaning liquid 90w supplied from the cleaning liquid nozzle 92 becomes the 1st water absorbing region 91w again and reaches the pressing roller 93, and after becoming the 2nd water absorbing region 91d by the pressing roller 93, contacts the back surface Sb again and is cleaned. Figure 7

[0083] ​​​Then, when the bonded wafer T is passed above the back surface cleaning device 90 by the wafer conveying device 70, in other words, when the entire surface of the back surface Sb of the second wafer S is cleaned by the cleaning roller 91, the cleaning of the back surface Sb by the back surface cleaning device 90 is completed. After that, the bonded wafer T whose back surface Sb is cleaned is conveyed to the cleaning device 41 to perform scrubbing (step S6) of the first wafer F. Figure 3

[0084] Further, the cleaning of the back surface Sb of the second wafer S is completed as above, but it is also possible to further clean the adsorption holding surface 71a of the wafer conveying device 70 by the back surface cleaning device 90 after the cleaning of the back surface Sb is completed. The cleaning of the adsorption holding surface 71a can be performed each time the bonded wafer T is processed, or can be performed after the processing of all the bonded wafers T housed in the cassette Ct is completed.

[0085] Further, the cleaning method of the adsorption holding surface 71a is the same as that of the back surface Sb of the second wafer S. That is, the adsorption holding surface 71a of the wafer conveying device 70 is brought into contact with the cleaning roller 91 in a state where the bonded wafer T is not held, and thus the cleaning is performed. In this case, the height of the adsorption holding surface 71a needs to be lowered by an amount corresponding to the thickness of the bonded wafer T so that the adsorption holding surface 71a is brought into appropriate contact with the cleaning roller 91.

[0086] After that, when all the processing by the back surface cleaning device 90 is completed, the back surface cleaning device 90 is stopped, as shown in (a) of Fig. 10. Figure 8 Figure 8 When the back surface cleaning device 90 is stopped, first, as shown in (b) of Fig. 10, the squeeze roller 93 is retracted from the cleaning roller 91 by the driving mechanism 93a. Figure 6

[0087] When the squeeze roller 93 is lowered, next, as shown in (c) of Fig. 10, the supply of the cleaning liquid 90w from the cleaning liquid nozzle 92 to the cleaning roller 91 is stopped. Figure 8 Figure 6

[0088] After the supply of the cleaning liquid 90w from the cleaning liquid nozzle 92 is stopped, finally, as shown in (d) of Fig. 10, the rotation of the cleaning roller 91 by the driving mechanism 91a is stopped. Figure 8 Figure 6

[0089] ​​​​​​​As described above, according to the back surface cleaning device 90 of the present embodiment, in the lapped wafer T after the back surface Wb of the first wafer W is polished, the polishing chips and the like (polishing chips and the cleaning liquid 80w) adhered to the back surface Sb of the second wafer S can be appropriately removed. At this time, the cleaning roller 91 contacts the back surface Sb in a state where the water absorption amount is reduced by the pressing roller 93, and thus the cleaning liquid 80w adhered to the back surface Sb can be more appropriately absorbed.

[0090] In addition, according to the present embodiment, the cleaning liquid nozzle 92 can clean the contaminated area 91p of the cleaning roller 91 after the cleaning of the back surface Sb, and thus the contaminated area 91p does not contaminate the back surface Sb, and the cleaning can be appropriately performed. In addition, after the contaminated area 91p is cleaned by the cleaning liquid nozzle 92, the cleaning liquid 90w of the cleaning roller 91 is pressed by the pressing roller 93 to be extruded, and thus the water absorption amount is reduced, and thus even when the cleaning of the cleaning roller 91 is performed, the cleaning liquid 80w adhered to the back surface Sb can be appropriately absorbed, and the cleaning of the back surface Sb can be more appropriately performed. At this time, the contaminated water contained in the cleaning roller 91 can be simultaneously extruded by the pressing roller 93, and thus the cleaning of the back surface Sb can be more appropriately performed.

[0091] Furthermore, the shielding plate 97 is provided below the cleaning liquid nozzle 92 in the direction of the injection of the cleaning liquid 90w. Thus, the contaminated water generated by the cleaning of the cleaning roller 91 can be suppressed from reaching the pressing roller 93, and the cleaning of the back surface Sb can be more appropriately performed.

[0092] In addition, according to the present embodiment, the cover 94 is provided to cover the cleaning roller 91 and the cleaning liquid nozzle 92, and the shielding plate 96 is provided above the cleaning liquid nozzle 92 in the direction of the injection of the cleaning liquid 90w. Thus, the cleaning liquid 90w injected from the cleaning liquid nozzle 92 can be appropriately suppressed from directly adhering to the back surface Sb and contaminating the outside of the back surface cleaning device 90.

[0093] In addition, according to the present embodiment, the cleaning roller 91 is rotated in the same direction as the direction in which the lapped wafer T is conveyed by the wafer conveying device 70. Thus, the cleaning liquid 90w can be suppressed from flying toward the back surface Wb of the first wafer W when the back surface Sb of the second wafer S contacts the cleaning roller 91.

[0094] In addition, according to the present embodiment, the cleaning roller 91 is formed to be larger than the diameter of the second wafer S in the length direction. Thus, when the second wafer S passes, the cleaning roller 91 can be brought into contact with the entire surface of the back surface Sb, and thus the cleaning of the back surface Sb can be appropriately performed.

[0095] In addition, according to the present embodiment, at the time of the start of the back surface cleaning device 90, the supply of the cleaning liquid 90w from the cleaning liquid nozzle 92 is started before the pressing of the cleaning roller 91 by the pressing roller 93, and thus the influence of the permanent deformation caused by the pressing roller 93 can be more appropriately suppressed.

[0096] In addition, likewise, according to the present embodiment, at the time of the start of the back surface cleaning device 90, the supply of the cleaning liquid 90w from the cleaning liquid nozzle 92 is started before the pressing of the cleaning roller 91 by the pressing roller 93, and thus the influence of the permanent deformation caused by the pressing roller 93 can be more appropriately suppressed.

[0097] Further, the structure of the back surface cleaning device 90 is not limited to the above-described embodiments. For example, in the above-described embodiments, the cleaning of the back surface Sb of the second wafer S is performed using only one cleaning roller 91, but for example, a plurality of cleaning rollers 91 can be provided below the transport path of the stacked wafer T.

[0098] In addition, for example, as shown in FIG. 10, a fluid nozzle 110 for spraying a fluid such as air or cleaning water to the back surface Sb can also be provided on the upstream side of the cleaning roller 91 in the transport path of the stacked wafer T. By thus providing the fluid nozzle 110, the fluid is sprayed to the back surface Sb before the contact with the cleaning roller 91, and thus the grinding chips and the like can be removed in advance, and the cleaning by the cleaning roller 91 can be more easily performed. Figure 9

[0099] In addition, the arrangement of the cleaning liquid nozzle 92 and the pressing roller 93 with respect to the cleaning roller 91 is not limited to the above-described embodiments, and can be arbitrarily arranged. However, from the viewpoint of performing the cleaning of the contaminated area 91p as soon as possible after the cleaning of the back surface Sb, the cleaning liquid nozzle 92 is preferably arranged close to the contact portion between the back surface Sb. In addition, from the viewpoint of suppressing the downward transfer of the cleaning liquid 90w removed by the pressing by the pressing roller 93 and the reabsorption of the cleaning liquid 90w by the cleaning roller 91, the pressing roller 93 is preferably arranged below the cleaning roller 91.

[0100] In addition, in the above-described embodiments, the pressing roller 93 does not have a rotation mechanism, but is co-rotated by being pressed against the cleaning roller 91, but a rotation mechanism can also be provided for the pressing roller 93.

[0101] In addition, in the above-described embodiments, the supply of the cleaning liquid 90w from the cleaning liquid nozzle 92 is stopped after the retreat of the pressing roller 93 in order to suppress the influence of the permanent deformation caused to the cleaning roller 91, but as long as the pressing roller 93 can be retreated before the drying of the cleaning roller 91, the pressing roller 93 can also be retreated after the stop of the supply of the cleaning liquid 90w. ​

[0102] Further, in the above embodiment, the rotation direction of the cleaning roller 91 is set to be in the same direction as the conveying direction of the bonded wafer T, but the rotation direction of the cleaning roller 91 is not limited thereto. For example, the rotation direction of the cleaning roller 91 is set to be in the opposite direction to the conveying direction of the bonded wafer T, whereby the cleaning ability of the cleaning roller 91 to the back surface Sb can be improved.

[0103] Further, in the above embodiment, the back surface Sb after the grinding process is cleaned, but the back surface cleaning device 90 is provided below the conveying path of the bonded wafer T with respect to the processing device 80. Therefore, in the case where the holding height of the bonded wafer T held by the wafer conveying device 70 is set to be constant, even in the case where cleaning is not required when the bonded wafer T is fed to the processing device 80, the cleaning roller 91 can come into contact with the back surface Sb. Therefore, in the present embodiment, the holding height of the bonded wafer T held by the wafer conveying device 70 is preferably controlled. Specifically, the height at which the cleaning roller 91 does not come into contact with the back surface Sb when the bonded wafer T is fed to the processing device 80, and the height at which the cleaning roller 91 comes into contact with the back surface Sb when the bonded wafer T is fed out are preferably set.

[0104] Further, in the above embodiment, the case where the back surface Sb of the second wafer S in the bonded wafer T formed by joining the first wafer W and the second wafer S is cleaned in the back surface cleaning device 90 is described as an example, but the wafer to be cleaned in the back surface cleaning device 90 is not limited thereto. For example, cleaning of a device wafer (the first wafer W) which can not be joined with a support wafer (the second wafer S) can be performed in the back surface cleaning device 90. In this case, a surface film Fw can not be formed on the device wafer.

[0105] It should be understood that the embodiments disclosed herein are illustrative only and not restrictive in all aspects. The above-described embodiments can be omitted, replaced, changed in various ways without departing from the scope of the appended claims and the spirit thereof.

[0106] Explanation of Reference Numerals

[0107] 1, wafer processing system; 70, wafer conveying device; 71a, adsorbing holding surface; 90, back surface cleaning device; 91, cleaning roller; 91a, driving mechanism; 92, cleaning liquid nozzle; 93, pressing roller; Sb, back surface (of the second wafer); T, bonded wafer; Wb, back surface (of the first wafer).

Claims

1. A substrate processing apparatus that processes a substrate, wherein the substrate processing apparatus has: a substrate conveying mechanism that holds one face of the substrate and conveys the substrate; and a cleaning mechanism that is provided below a conveying path of the substrate conveying mechanism that conveys the substrate, and cleans the other face of the substrate, the cleaning mechanism has: a water-absorbing roller that is configured to be rotatable by a driving mechanism, and has a water-absorbing layer at least on a surface layer of a peripheral surface; a cleaning liquid nozzle that supplies a cleaning liquid to the water-absorbing roller; and a pressing roller that is provided at a position on a downstream side of the cleaning liquid nozzle in a rotation direction of the water-absorbing roller, and is configured to be movable in a close-approach direction with respect to the water-absorbing roller, when the other face of the substrate is cleaned by the cleaning mechanism, the pressing roller is pressed against the water-absorbing roller to which the cleaning liquid is supplied, and the water-absorbing amount of the water-absorbing roller is reduced, the water-absorbing roller whose water-absorbing amount is reduced is brought into contact with the other face of the substrate, and the other face of the substrate is cleaned.

2. The substrate processing apparatus according to claim 1, wherein the cleaning mechanism has a shielding plate below the cleaning liquid nozzle along a direction of injection of the cleaning liquid.

3. The substrate processing apparatus according to claim 1 or 2, wherein the cleaning mechanism has a shielding plate above the cleaning liquid nozzle along a direction of injection of the cleaning liquid.

4. The substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus has a cover that is provided so as to accommodate the cleaning mechanism, and has an opening portion formed on an upper surface of the cover, and an upper portion of the water-absorbing roller that is in contact with the other face of the substrate protrudes from the opening portion.

5. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus has an exhaust mechanism that exhausts an inside of the cover.

6. The substrate processing apparatus according to claim 1 or 2, wherein the cleaning mechanism has a fluid nozzle that is provided at a position on an upstream side of the water-absorbing roller in the conveying path of the substrate, and supplies a fluid to the other face.

7. The substrate processing apparatus according to claim 1 or 2, wherein a rotation direction of the water-absorbing roller that is rotatable by the driving mechanism is in the same direction as a conveying direction of the substrate.

8. The substrate processing apparatus according to claim 1 or 2, wherein the water-absorbing roller has a size of a diameter of the substrate or more in a length direction.

9. The substrate processing apparatus according to claim 1 or 2, wherein the substrate conveying mechanism adsorptively holds one face of the substrate by an adsorptive holding surface, and the cleaning mechanism cleans the adsorptive holding surface.

10. The substrate processing apparatus according to claim 9, wherein the substrate conveying mechanism is configured to be movable in a close-approach direction with respect to the cleaning mechanism.

11. A substrate processing method that processes a ground substrate, wherein the substrate processing method includes the steps of: conveying the substrate whose one face is held by a substrate conveying mechanism; and ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The other surface of the substrate is cleaned by a cleaning mechanism, The cleaning of the other surface includes the steps of: supplying cleaning liquid to the water-absorbing roller rotating by a driving mechanism from a cleaning liquid nozzle; when the other surface of the substrate is cleaned by the cleaning mechanism, the water-absorbing amount of the water-absorbing roller is reduced by pressing the water-absorbing roller to which the cleaning liquid is supplied by a pressing roller; and the water-absorbing roller whose water-absorbing amount is reduced is brought into contact with the other surface.

12. The substrate processing method according to claim 11, wherein the pressing roller is pressed to the water-absorbing roller by a driving mechanism after the water-absorbing roller absorbs the cleaning liquid from the cleaning liquid nozzle.

13. The substrate processing method according to claim 11 or 12, wherein the water-absorbing roller which is brought into contact with the other surface is cleaned by the supply of cleaning liquid from the cleaning liquid nozzle, the water-absorbing amount of the water-absorbing roller to which the cleaning liquid is supplied is reduced by pressing the water-absorbing roller by a pressing roller, and the water-absorbing roller is brought into contact with the other surface again.

14. The substrate processing method according to claim 11 or 12, wherein the substrate processing method includes the step of supplying fluid to the other surface of the substrate before the water-absorbing roller is brought into contact with the other surface from a fluid nozzle.

15. The substrate processing method according to claim 11 or 12, wherein the water-absorbing roller is rotated in the same direction as the direction in which the substrate is transported by the substrate transporting mechanism.

16. The substrate processing method according to claim 11 or 12, wherein the cleaning mechanism is provided inside a cover having an opening portion in an upper surface through which an upper portion of the water-absorbing roller protrudes, the substrate processing method includes the step of exhausting the inside of the cover by an exhaust mechanism.

17. The substrate processing method according to claim 11 or 12, wherein one surface of the substrate is adsorptively held by an adsorptive holding surface of a substrate transporting mechanism, the substrate processing method includes the step of cleaning the adsorptive holding surface of the substrate transporting mechanism.

18. The substrate processing method according to claim 11 or 12, wherein the cleaning mechanism stops the supply of cleaning liquid from the cleaning liquid nozzle after the pressing roller is retracted from the water-absorbing roller.

19. The substrate processing method according to claim 11 or 12, wherein the cleaning mechanism retracts the pressing roller from the water-absorbing roller after the supply of cleaning liquid from the cleaning liquid nozzle is stopped and before the water-absorbing roller is dried.

20. The substrate processing method according to claim 11 or 12, wherein the substrate processing method includes the step of grinding one surface of the substrate by a processing device, the substrate transporting mechanism changes the holding height of the substrate when the substrate is fed into and out of the processing device, and the cleaning of the other surface is performed when the substrate is fed out. ​

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