Electronic device

Abstract

An electronic device includes a signal reading line and a sensing element. The sensing element is electrically connected to the signal reading line and includes a pixel sensor and a sensing pad. The pixel sensor includes a first transistor, a first capacitor, and a second transistor. The first transistor includes a first terminal, a second terminal, and a first control terminal, wherein the first capacitor is electrically connected to the first control terminal and the second terminal. The second transistor includes a third terminal, a fourth terminal, and a second control terminal, wherein the fourth terminal is electrically connected to the signal reading line. The sensing pad is electrically connected to the second terminal.

Description

Technical Field

[0001] The present invention relates to an electronic device, and more particularly to an electronic device having a pixel sensor. Background Art

[0002] With the development of technology, the in-cell technology of embedding the touch function into the pixels of an electronic device has been widely used. In addition, as the resolution of the display screen increases day by day, the user's demand for touch resolution (the distribution density of touch points) has also gradually increased.

[0003] However, to achieve a high-resolution touch experience, more touch ICs and a more complex and bulky wiring configuration are required in circuit design than in the prior art. This will not only make the circuit design complex, but also increase the cost.

[0004] Therefore, an electronic device is needed to improve the above problems. Summary of the Invention

[0005] The present invention provides an electronic device, including a signal reading line and a sensing element. The sensing element is electrically connected to the signal reading line and includes a pixel sensor and a sensing pad. The pixel sensor includes a first transistor, a first capacitor, and a second transistor. The first transistor includes a first end, a second end, and a first control end, wherein the first capacitor is electrically connected to the first control end and the second end. The second transistor includes a third end, a fourth end, and a second control end, wherein the fourth end is electrically connected to the signal reading line. The sensing pad is electrically connected to the second end.

[0006] Other novel features of the present invention will become clearer from the following detailed description in conjunction with the accompanying drawings. Brief Description of the Drawings

[0007] Figure 1 is a schematic diagram of an electronic device according to an embodiment of the present invention;

[0008] Figure 2 is a circuit diagram of a sensing element according to a first embodiment of the present invention;

[0009] Figure 3 is a partial stacked structure cross-sectional view of an electronic device according to a first embodiment of the present invention;

[0010] Figure 4 is a signal timing diagram of a sensing element according to a first embodiment of the present invention;

[0011] Figure 5 is a schematic diagram of the architecture of a sensing element array according to a first embodiment of the present invention;

[0012] Figure 6 is Figure 5Signal timing diagram of the sensing element array of the embodiment;

[0013] Figure 7 is the circuit diagram of the sensing element of the second embodiment of the present invention;

[0014] Figure 8 is the signal timing diagram of the sensing element of the second embodiment of the present invention;

[0015] Figure 9 is the schematic diagram of the architecture of the sensing element array of the second embodiment of the present invention;

[0016] Figure 10 is Figure 9 the signal timing diagram of the sensing element array of the embodiment.

[0017]

Description of the reference numerals

[0018] 1 Electronic device

[0019] 2 Sensing element

[0020] 3 Pixel sensor

[0021] 4 Sensing pad

[0022] T1 First transistor

[0023] a1 First terminal

[0024] a2 Second terminal

[0025] a3 First control terminal

[0026] Cr1 First capacitor

[0027] T2 Second transistor

[0028] b1 Third terminal

[0029] b2 Fourth terminal

[0030] b3 Second control terminal

[0031] T3 Third transistor

[0032] c1 Fifth terminal

[0033] c2 Sixth terminal

[0034] c3 Third control terminal

[0035] Cr2 Second capacitor

[0036] Cf Third capacitor

[0037] VDD1 First potential

[0038] VDD2 Second potential

[0039] Vin first node signal

[0040] Vin' second node signal

[0041] Vgn first control signal

[0042] Vb bias signal

[0043] Vgn+1 second control signal

[0044] RL signal reading line

[0045] Vout output signal

[0046] AB cross-section line

[0047] 211 first conductive layer

[0048] 212 second conductive layer

[0049] 221 first electrode layer

[0050] 213 third conductive layer

[0051] 214 fourth conductive layer

[0052] 222 second electrode layer

[0053] 231 first insulating layer

[0054] 232 second insulating layer

[0055] 233 third insulating layer

[0056] 234 fourth insulating layer

[0057] 235 fifth insulating layer

[0058] 236 sixth insulating layer

[0059] 237 seventh insulating layer

[0060] 241 gate insulating layer

[0061] 251 first photoresist layer

[0062] 252 second photoresist layer

[0063] 261 alignment film layer

[0064] Vin1~Vin4 first voltage value to fourth voltage value

[0065] P1 first operation stage

[0066] P2 second operation stage

[0067] Vout1~Vout4 first output value to fourth output value

[0068] Differences between ΔV1 and ΔV2

[0069] 20 Sensing element array

[0070] Sensing elements 21 to 24

[0071] Line 1 to Line 8, the first to the eighth signal traces

[0072] Control signals Vg1 to Vgm

[0073] VDD potential

[0074] VSS potential

[0075] Bias signals Vb1 to Vbm

[0076] RL1, the first signal read line

[0077] RL2, the second signal read line

[0078] Node A

[0079] Node B

[0080] Node C

[0081] Node A'

[0082] Node C' Detailed implementation manners

[0083] When read in conjunction with the accompanying drawings, the following embodiments are used to clearly show the above and other technical contents, features and / or effects of the present invention. Through the elaboration of the specific implementation manners, people will further understand the technical means and effects adopted by the present invention to achieve the above purposes. In addition, since the content disclosed by the present invention should be easy to understand and can be implemented by those skilled in the art, all equivalent substitutions or modifications that do not depart from the concept of the present invention should be included in the claims.

[0084] It should be noted that in this article, unless otherwise specified, a "an" element does not refer to a single such element, but may also refer to one or more such elements.

[0085] In addition, ordinal numbers such as "first" or "second" in the specification and claims are only used to describe the claimed elements, and do not represent or indicate that the claimed elements have any ordinal order, and are not the order between the claimed elements and another claimed element or the steps of the manufacturing method. The use of these ordinal numbers is only to distinguish one claimed element with a specific name from another claimed element with the same name.

[0086] In addition, in the specification and claims, a term such as "adjacent" is used to describe being in proximity to each other and does not necessarily mean being in contact with each other.

[0087] In addition, descriptions such as "when..." or "while..." in the present invention represent forms such as "at present, before, or after", and are not limited to the case of occurring simultaneously. This is stated herein in advance. Descriptions such as "disposed on..." in the present invention represent the corresponding positional relationship between two elements and do not limit whether there is contact between the two elements, unless otherwise specifically limited. This is stated herein in advance. Furthermore, when the present invention records multiple functions, if the word "or" is used between the functions, it means that the functions can exist independently, but it does not exclude the possibility that multiple functions can exist simultaneously.

[0088] In addition, in the specification and claims, a term such as "connected" or "coupled" not only refers to being directly connected to another element, but may also refer to being indirectly connected or electrically connected to another element. Additionally, electrical connection includes direct connection, indirect connection, or the form of radio signal communication between two elements.

[0089] In addition, in the specification and claims, terms such as "about", "approximately", "substantially", and "essentially" generally mean that the difference between a value and a given value is within 10% of the given value, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of the given value. The quantity given herein is an approximate quantity, that is, even without specifically stating "about", "approximately", "substantially", or "essentially", the meanings of "about", "approximately", "substantially", and "essentially" may still be implied. In addition, the expressions "the range is from the first value to the second value" and "the range is between the first value and the second value" mean that the said range includes the first value, the second value, and other values therebetween.

[0090] In addition, the technical features of different embodiments disclosed in the present invention can be combined to form another embodiment.

[0091] In addition, the electronic device disclosed in the present invention may include a display device, an antenna device, a sensing device, a touch display, a curved display, or a free shape display, but is not limited thereto. The electronic device may be a foldable or flexible electronic device. The electronic device may include, for example, liquid crystal, light emitting diode, fluorescence, phosphor, other suitable display media, or a combination of the foregoing, but is not limited thereto. The light emitting diode may include, for example, organic light emitting diode (OLED), mini LED, micro LED, or quantum dot light emitting diode (quantum dot, QD, which may be, for example, QLED, QDLED) or other suitable materials or any arrangement combination of the above materials, but is not limited thereto. The display device may include, for example, a tiled display device, but is not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The antenna device may include, for example, a tiled antenna device, but is not limited thereto. It should be noted that the electronic device may be any arrangement combination of the foregoing, but is not limited thereto. In addition, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a driving system, a control system, a light source system, a rack system, etc. to support the display device, the antenna device, or the tiled device. For ease of explanation, the following will be described in the form of the electronic device being a display device, but the present invention is not limited thereto.

[0092] Figure 1 is a schematic diagram of the electronic device 1 according to an embodiment of the present invention. As Figure 1 shown, the electronic device 1 includes at least one signal reading line RL and a sensing element 2. The sensing element 2 at least includes: a pixel sensor 3 and a sensing pad 4, wherein the pixel sensor 3 at least includes a first transistor T1, a first capacitor Cr1, and a second transistor T2. The sensing pad 4 is electrically connected to the pixel sensor 3. The signal reading line RL can output a signal to a reading chip 5. The sensing element 2 can be used to sense whether a touch behavior occurs.

[0093] Figure 2 is a circuit schematic diagram of the sensing element 2 according to the first embodiment of the present invention, and please refer to Figure 1 . As Figure 2As shown, the sensing element 2 is electrically connected to the signal reading line RL. The pixel sensor 3 of the sensing element 2 includes a first transistor T1, a second transistor T2, a third transistor T3, a first capacitor Cr1, and a second capacitor Cr2.

[0094] The first transistor T1 includes a first terminal a1, a second terminal a2, and a first control terminal a3. In an embodiment, the first terminal a1 is the drain or source of the first transistor T1, the second terminal a2 is the source or drain of the first transistor T1, and the first control terminal a3 is the gate of the first transistor T1. The first terminal a1 can be electrically connected to a first potential VDD1, the second terminal a2 can be electrically connected to the third transistor T3, and the first control terminal a3 can be electrically connected to a first control signal Vgn. In an embodiment, the first transistor T1 is a reset transistor of the pixel sensor 3 for resetting the signals of each node on the pixel sensor 3 in various working stages (such as when a frame is displayed), but the function of the first transistor T1 is not limited thereto.

[0095] The second transistor T2 includes a third terminal b1, a fourth terminal b2, and a second control terminal b3. In an embodiment, the third terminal b1 is the drain or source of the second transistor T2, the fourth terminal b2 is the source or drain of the second transistor T2, and the second control terminal b3 is the gate of the second transistor T2. The third terminal b1 can be electrically connected to the third transistor T3 at node B, the second control terminal b3 can be electrically connected to a second control signal Vgn+1, and the fourth terminal b2 can be electrically connected to the signal reading line RL at node C. Thereby, the fourth terminal b2 can output an output signal Vout to the signal reading line RL, so that the output signal Vout can be measured at node C. The output signal Vout can be transmitted to the reading chip 5 via the signal reading line RL.

[0096] The third transistor T3 includes a fifth terminal c1, a sixth terminal c2, and a third control terminal c3. In an embodiment, the fifth terminal c1 is the drain or source of the third transistor T3, the sixth terminal c2 is the source or drain of the third transistor T3, and the third control terminal c3 is the gate of the third transistor T3. The fifth terminal c1 can be electrically connected to a second potential VDD2, the sixth terminal c2 can be electrically connected to the third terminal b1, and the third control terminal c3 can be electrically connected to the second terminal a2.

[0097] One end of a first capacitor Cr1 is electrically connected to a first control terminal a3, and the other end of the first capacitor Cr1 is electrically connected to a second terminal a2. One end of a second capacitor Cr2 is electrically connected to the second terminal a2, and the other end of the second capacitor Cr2 is electrically connected to a bias signal Vb. In one embodiment, when a first transistor T1 is turned on, a first node signal Vin is generated on the second terminal a2, and a voltage value of the first node signal Vin will be between a first potential VDD1 and the bias signal Vb according to a capacitance value ratio of the first capacitor Cr1 and the second capacitor Cr2.

[0098] In one embodiment, a capacitance value of the second capacitor Cr2 may be greater than or equal to a capacitance value of the first capacitor Cr1 (i.e., Cr2≥Cr1). By adjusting a ratio between the second capacitor Cr2 and the first capacitor Cr1, a relatively high touch sensitivity can be achieved. For example, in one embodiment, the second capacitor Cr2 may be 2 to 4 times that of the first capacitor Cr1 (i.e., 2≤ ≤4). In one embodiment, the second capacitor Cr2 may be 3 to 3.5 times that of the first capacitor Cr1 (i.e., 3≤ ≤3.5). In one embodiment, the second capacitor Cr2 may be 3.25 times that of the first capacitor Cr1 (i.e., 3.25= ), but the present invention is not limited thereto.

[0099] For another example Figure 2 As shown, a sensing pad 4 is electrically connected to the second terminal a2 at a node A. In one embodiment, a material of the sensing pad 4 may include a conductive metal material, a conductive thin film (such as a transparent conductive thin film (indium tin oxide, hereinafter referred to as ITO)), other suitable materials, or a combination of the above materials, and is not limited thereto. In one embodiment, when an object approaches or touches a sensing element 2 of an electronic device 1 (such as a display device), a third capacitor Cf is generated between the object and the sensing pad 4; at this time, since the third capacitor Cf is added, a voltage value of the first node signal Vin on the second terminal a2 will be affected by the third capacitor Cf and change, and further change a voltage value of an output signal (Vout). Therefore, a reading chip 5 can determine whether a touch occurs and a touch position according to a change in the output signal (Vout). Details of the detection process will be described in more detail in subsequent paragraphs.

[0100] Note that in one embodiment, even though a parasitic capacitance may be generated when the first transistor T1 is turned on, the pixel sensor 3 still needs to include the first capacitor Cr1, which means that the parasitic capacitance cannot directly replace the first capacitor Cr1. The reason is that the capacitance value of the parasitic capacitance is more easily affected by the material stacking structure and is therefore difficult to control. In addition, the capacitance value of the parasitic capacitance is generally low. When the parasitic capacitance is used in combination with the second capacitor Cr2 or the third capacitor Cf, the capacitance value of the parasitic capacitance is much lower than that of the second capacitor Cr2 or the third capacitor Cf, so it is easily ignored or difficult to read.

[0101] Next, the stacking structure features of the electronic device 1 will be described, and please also refer to Figure 3 while referring to Figures 1 to 2 .

[0102] As Figure 3 shown, when observing the electronic device 1 from the cross-sectional view, the electronic device 1 may include a first conductive layer 211, a second conductive layer 212, a first electrode layer 221, and a second electrode layer 222. In one embodiment, the first conductive layer 211 can be used as the gate or gate line of the transistor, the first electrode layer 221 can be used as the touch electrode (i.e., the sensing pad 4 in Figure 2 ) or the common electrode, the second electrode layer 222 can be used as the pixel electrode, and the first electrode layer 221 and / or the second electrode layer 222 can be an ITO layer, but the present invention is not limited thereto. The first electrode layer 221 and the first conductive layer 211 at least partially overlap to form the first capacitor Cr1. For example, in one embodiment, the first capacitor Cr1 includes the overlapping portion of the first electrode layer 221 and the first conductive layer 211, and there should be no other conductive layer overlapping in the middle. In one embodiment, the first electrode layer 221 and the second electrode layer 222 at least partially overlap to form the second capacitor Cr2. More specifically, the second capacitor Cr2 may include the overlapping portion of the first electrode layer 221 and the second electrode layer 222, and there should be no other conductive layer overlapping in the middle. Note that in some embodiments, the electronic device 1 may not include the second electrode layer 222. In this case, the second capacitor Cr2 may include the overlapping portion of the second conductive layer 212 and the first electrode layer 221. In addition, when the first conductive layer 211 can be used as the gate line and extends in one direction (such as the X direction in Figure 3 ), the portion of the first conductive layer 211 that overlaps with the first electrode layer 221 and has no other conductive layer overlapping in the middle can also be used as part of the first capacitor Cr1.

[0103] As Figure 3As shown, along the display direction (e.g., the Z direction) of the electronic device 1, the gate insulating layer 241 is disposed on the semiconductor layer 210, and the first conductive layer 211 and a first insulating layer 231 are disposed on the gate insulating layer 241. A third conductive layer 213 and a second insulating layer 232 are disposed on the first insulating layer 231. Among them, the semiconductor layer 210, the first conductive layer 211, a third conductive layer 213, and a part of the gate insulating layer 241 at the corresponding position can form a transistor, and the first conductive layer 211 can serve as the gate of the transistor. A first photoresist layer 251 is disposed on the second insulating layer 232. A third insulating layer 233 is disposed on the first photoresist layer 251. A fourth insulating layer 234 and a fourth conductive layer 214 are disposed on the third insulating layer 233, and the fourth conductive layer 214 penetrates through the third insulating layer 233, the first photoresist layer 251, and the second insulating layer 232 to be electrically connected to the third conductive layer 213. A second photoresist layer 252 is disposed on the fourth insulating layer 234. A fifth insulating layer 235 is disposed on the second photoresist layer 252. A sixth insulating layer 236 and a second conductive layer 212 are disposed on the fifth insulating layer 235. A seventh insulating layer 237 and a second electrode layer 222 are disposed on the sixth insulating layer 236. An alignment film layer 261 and a first electrode layer 221 are disposed on the seventh insulating layer 237, and the first electrode layer 221 penetrates through the seventh insulating layer 237, the sixth insulating layer 236, the fifth insulating layer 235, and the second photoresist layer 252 to be electrically connected to the fourth conductive layer 234. The above example shows the stacked situation presented by the cross-section of an embodiment of the present invention, but the present invention is not limited thereto. It should be noted that in Figure 3 In the illustrated embodiment, the first photoresist layer 251 and the second photoresist layer 252 can have insulating functions, but their materials and thicknesses can be different from those of other insulating layers. For example, in an embodiment, the first photoresist layer 251 and the second photoresist layer 252 can be organic dielectric layers that do not contain oxides, and their thicknesses are relatively thick to be used as planarization layers, while other insulating layers can contain oxide components, but the present invention is not limited thereto. Thus, the stacked structural features of the sensing element 2 can be understood.

[0104] Next, the operation process of the sensing element 2 will be described. Figure 4 is the signal timing diagram of the sensing element 2 of the first embodiment of the present invention, and please refer to Figures 1 to 3 .

[0105] As Figure 2 and Figure 4As shown, in a first operating stage P1 (i.e., the initial stage), the first control signal Vgn is at a high potential, and the first transistor T1 is turned on. Since the first terminal a1 is connected to the first potential VDD1, the first potential VDD1 charges the second terminal a2, causing the voltage value of the first node signal Vin at the second terminal a2 to increase from an initial value (such as zero voltage) to a first voltage value Vin1. When the first voltage value Vin1 is greater than the threshold voltage of the third transistor T3, the third transistor T3 is also turned on, and the second potential VDD2 charges the sixth terminal c2 (equivalent to the third terminal b1), thereby increasing the voltage value of a second node signal Vin' at the sixth terminal c2 to a third voltage value Vin1'. In addition, in the first operating stage P1, the bias signal Vb is a constant value, so the first voltage value Vin1 is mainly affected by the first capacitor Cr1 and the second capacitor Cr2. Additionally, the second control signal Vgn+1 is at a low potential, so the second transistor T2 is turned off.

[0106] After that, in a second operating stage P2 (following the first operating stage P1), the first control signal Vgn changes to a low potential, the first transistor T1 is turned off, and the second control signal Vgn+1 changes from a low potential to a high potential. Therefore, the second transistor T2 is turned on, and the output signal Vout is output to the signal reading line RL. In the case of no touch, the voltage value of the output signal Vout is defined as a first output value Vout1.

[0107] In the second operating stage P2, when an object touches the touch area of the electronic device 1 (i.e., when touch occurs), a third capacitor Cf is generated between the object and the sensing pad 4. At this time, the voltage value of the first node signal Vin at the second terminal a2 will change to a second voltage value Vin2 under the influence of the first capacitor Cr1, the second capacitor Cr2, and the third capacitor Cf. Since the first node signal Vin input to the third control terminal c3 changes from the first voltage value Vin1 to the second voltage value Vin2, the current passing through the third transistor T3 also changes, causing the voltage value of the second node signal Vin' at the sixth terminal c2 (i.e., the third terminal b1) to change to a fourth voltage value Vin2'. Since the voltage value of the second node signal Vin' changes, the voltage value of the output signal Vout also changes from the first output value Vout1 to a second output value Vout2. At this time, the reading chip 5 can determine whether touch occurs and the touch position based on whether a difference ΔV1 (i.e., ΔV1 = Vout1 - Vout2) between the second output value Vout2 and the first output value Vout1 meets a touch judgment threshold value ΔVt (such as ΔV1 ≧ ΔVt).

[0108] More specifically, in one embodiment, when no touch occurs, the first voltage value Vin1 at the second terminal a2 is affected by the first capacitor Cr1 and the second capacitor Cr2. Therefore, the first voltage value Vin1 can be expressed by the following formula:

[0109] ;

[0110] where is the first voltage value, is the capacitance value of the first capacitor Cr1, is the capacitance value of the second capacitor Cr2, is the first control signal.

[0111] In one embodiment, when a touch occurs, the second voltage value Vin2 at the second terminal a2 is affected by the first capacitor Cr1, the second capacitor Cr2, and the third capacitor Cf. Therefore, the second voltage value Vin2 can be expressed by the following formula:

[0112] ;

[0113] where is the second voltage value, is the third capacitor.

[0114] In one embodiment, the difference Vin1 - Vin2 between the first voltage value Vin1 and the second voltage value Vin2 can be approximately equal to the difference Vin1' - Vin2' between the third voltage value Vin1' and the fourth voltage value Vin2', but is not limited thereto.

[0115] In one embodiment, the first potential VDD1, the second potential VDD2, and the bias signal Vb can be the same or different DC signals. And when two of them are the same DC signals, they can come from the same signal source or the same signal trace. The present invention is not limited thereto. In one embodiment, the first control signal Vgn and the second control signal Vgn+1 can be AC signals with different timings. The present invention is not limited thereto. For example, in some embodiments, the first potential VDD1, the second potential VDD2, or the bias signal Vb can be AC signals.

[0116] Thus, the operation process of the sensing element 2 can be understood, and the sensing element 2 formed by integrating the sensing pad 4 and the pixel sensor 3 can be realized.

[0117] In addition, a plurality of sensing elements 2 can form a sensing element array architecture 20. Figure 5 is a schematic diagram of the architecture of the sensing element array 20 according to the first embodiment of the present invention. Please also refer to Figures 1 to 4 . For the convenience of description, Figure 5For illustration, the sensing element array 20 includes four sensing elements 2 with the same structure (such as sensing element 21, sensing element 22, sensing element 23, and sensing element 24). Additionally, although Figure 5 the sensing element array 20 in the embodiment is rectangular, the present invention is not limited thereto.

[0118] As Figure 5 shown, the first ends a1 of sensing element 21 and sensing element 22 can be simultaneously connected to a first signal trace Line1 to respectively receive a potential VDD as a first potential VDD1 from the first signal trace Line1. The first control ends a3 of sensing element 21 and sensing element 22 can be simultaneously connected to a second signal trace Line2 to respectively receive a control signal Vg1 as a first control signal Vgn (labeled in Figure 2 ). The second capacitances Cr2 of sensing element 21 and the second capacitance Cr2 of sensing element 22 can be simultaneously connected to a third signal trace Line3 to respectively receive a bias signal Vb from the third signal trace Line3. The fifth ends c1 of sensing element 21 and sensing element 22 can be simultaneously connected to a first signal trace Line1 to respectively receive the potential VDD as a second potential VDD2 (that is, in Figure 5 the embodiment, the first potential VDD1 is equal to the second potential VDD2, but the present invention is not limited thereto). The second control ends b3 of sensing element 21 and sensing element 22 can be simultaneously electrically connected to a fourth signal trace Line4 to respectively receive a control signal Vg2 and use it as their own second control signal Vgn+1 (labeled in Figure 2 ).

[0119] In addition, the first control ends a3 of sensing element 23 and sensing element 24 can be simultaneously connected to the fourth signal trace Line4 to respectively receive the control signal Vg2 and use it as their own first control signal Vgn (labeled in Figure 2 ).

[0120] Furthermore, the fourth ends b2 of sensing element 21 and sensing element 23 can be simultaneously connected to a first signal reading line RL1 to respectively output an output signal Vout (labeled in Figure 2 ) via the first signal reading line RL1. Similarly, the fourth ends b2 of sensing element 22 and sensing element 24 can be simultaneously connected to a second signal reading line RL2 to respectively output an output signal Vout (labeled in Figure 2 ) via the second signal reading line RL2. For other parts, refer to Figure 5And so on.

[0121] It can be seen from this that the sensing elements 2 in the sensing element array 20 of the present invention can share the signal reading line RL. Compared with the prior art, the number of signal traces required by the present invention will be greatly reduced.

[0122] Figure 6 Yes Figure 5 The signal timing diagram of the sensing element array of the embodiment. As Figure 5 And Figure 6 shown, a plurality of control signals (such as Vg1~Vg5) sequentially turn into high potential at different time points. The sensing elements (such as sensing elements 21 and 22) in the first row of the sensing element array 20 use the first control signal Vg1 as their own first control signal Vgn (marked in Figure 2 ), and use the second control signal Vg2 as their own second control signal Vgn+1 (marked in Figure 2 ). And the sensing elements (such as sensing elements 23 and 24) in the second row of the sensing element array 20 use the second control signal Vg2 as their own first control signal Vgn (marked in Figure 2 ), and use the third control signal Vg3 as their own second control signal Vgn+1 (marked in Figure 2 ). For other parts, refer to Figure 6 And so on. From Figure 5 it can be seen that since the first control terminals a3 of the sensing elements 23 and 24 and the second control terminals b3 of the sensing elements 21 and 22 can be electrically connected to the fourth signal trace Line4 at the same time, when the first transistor T1 of the sensing elements (such as sensing elements 23 and 24) in one row is turned on, the first transistor T2 of the sensing elements (such as sensing elements 21 and 22) in the previous row is also turned on to output the output signal Vout (marked in Figure 2 ). In addition, in an embodiment, the first control signal Vg1 can come from a starting pulse signal STV, some control signals (such as Vg2~Vg4) can come from a signal source (such as a gate controller GOP1), and some control signals (such as Vg5) can come from another signal source (such as another gate controller GOP2), but it is not limited thereto.

[0123] In addition, although Figure 5 in the embodiment, the sensing elements in different rows share some signal traces. For example, the second control terminals b3 of the sensing elements 21 and 22 and the first control terminals a3 of the sensing elements 23 and 24 share the fourth signal trace Line4. However, in other embodiments, the sensing elements 2 in different rows can also be respectively connected to different signal traces. At this time Figure 6 the control signals corresponding to the sensing elements 2 in the same row in the middle can also be adjusted accordingly.

[0124] Thus, the architecture and operation of the sensing element array 20 of the first embodiment can be understood.

[0125] The sensing element 2 of the present invention may also have different embodiments. Figure 7 is the circuit diagram of the sensing element 2 of the second embodiment of the present invention. Please also refer to Figures 1 to 6 .

[0126] As Figure 7 shown, the sensing element 2 of the second embodiment is electrically connected to the signal reading line RL. The sensing element 2 also includes a pixel sensor 3 and a sensing pad 4. The pixel sensor 3 includes a first transistor T1, a second transistor T2, a first capacitor Cr1, and a second capacitor Cr2. The parts that are the same as those of the first embodiment in the second embodiment can apply the content of the first embodiment. Therefore, the following mainly describes the special points.

[0127] In the second embodiment, the first end a1 of the first transistor T1 is electrically connected to a potential VSS, the third end b1 of the second transistor T2 is electrically connected to a potential VDD, and the second control end b3 of the second transistor T2 can be electrically connected to the second end a2 of the first transistor T1. For example, the second control end b3 can be electrically connected to the second end a2 of the first transistor T1 via the node A'. In addition, the bias signal Vb can have different potentials at different time points. The fourth end b2 of the second transistor T2 can be electrically connected to the signal reading line RL at the node C'.

[0128] Next, the operation process of the sensing element 2 of the second embodiment is described. Figure 8 is the signal timing diagram of the sensing element 2 of the second embodiment of the present invention. Please also refer to Figures 1 to 7 .

[0129] As Figure 7 and Figure 8 shown, in a first operation stage P1, the first control signal Vgn is at a high potential, so the first transistor T1 is turned on. At this time, the bias signal Vb is at a low potential. Since the first end a1 is connected to the potential VSS, the first node signal Vin at the second end a2 is also coupled to an initial voltage value (such as zero voltage).

[0130] In a second operation stage P2, the first control signal Vgn changes to a low potential, so the first transistor T1 is turned off. At this time, the bias signal Vb changes from a low potential to a high potential and charges the second terminal a2, raising the first node signal Vin of the second terminal a2 to a fifth voltage value Vin3. When the fifth voltage value Vin3 reaches (for example, is greater than or equal to) the threshold voltage of the second transistor T2, the second transistor T2 can be turned on, and the fourth terminal b4 can output the output signal Vout to the signal reading line RL, enabling the output signal Vout to be measured at the node C'. In one embodiment, when no touch occurs, the voltage value of the output signal is defined as a third output value Vout3. In one embodiment, the fifth voltage value Vin3 is affected by the first capacitor Cr1 and the second capacitor Cr2 and can be expressed by the following formula:

[0131] ;

[0132] where is the fifth voltage value, is the voltage value of the bias signal Vb.

[0133] In addition, in one embodiment, in the second operation stage P2, when a touch occurs, a third capacitor Cf is formed between the object (such as a finger) and the sensing pad 4. At this time, the first node signal Vin of the second terminal a2 is affected by the first capacitor Cr1, the second capacitor Cr2, and the third capacitor Cf, and the voltage value of its first node signal Vin changes from the fifth voltage value Vin3 to a sixth voltage value Vin4, and thus the voltage value of the output signal Vout changes from the third output value Vout3 to a fourth output value Vout4. Therefore, the reading chip 5 can determine whether a touch occurs and the touch position based on whether a difference ΔV2 (i.e., ΔV2 = Vout3 - Vout4) between the third output value Vout3 and the fourth output value Vout4 satisfies the touch judgment threshold value ΔVt (for example, ΔV2 ≧ ΔVt). In one embodiment, the sixth voltage value Vin4 is affected by the first capacitor Cr1, the second capacitor Cr2, and the third capacitor Cf and can be expressed by the following formula:

[0134] ;

[0135] where is the sixth voltage value.

[0136] In one embodiment, the potential VDD and the potential VSS can be different DC signals and thus can come from different signal sources. The present invention is not limited thereto. In one embodiment, the first control signal Vgn and the bias signal Vb can be AC signals with different timings. The present invention is not limited thereto. Thus, the operation process of the sensing element 2 of the second embodiment can be understood.

[0137] Please refer to Figure 9 。 Figure 9 Figure 9 is a schematic structural diagram of the sensing element array 30 according to the second embodiment of the present invention. In one embodiment, when a plurality of sensing elements 2 of the second embodiment form the sensing element array 30, the operating mode of the sensing element array 30 is as follows: after the first transistors T1 of all the sensing elements 2 are turned on in the first operation phase P1, the electronic device 1 enters the second operation phase P2; in other words, the sensing element 2 of the second embodiment performs touch detection only in the second operation phase P2, but the present invention is not limited thereto. For example, in some embodiments, touch detection can be performed after the first transistors T1 of some of the sensing elements 2 are turned on.

[0138] Next, the details of a plurality of sensing elements 2 of the second embodiment forming the sensing element array 30 will be described. Please also refer to Figures 1 to 9 。For the convenience of description, Figure 9 it is also exemplified that the sensing element array 30 includes four sensing elements 2 with the same structure (for example, sensing element 31, sensing element 32, sensing element 33, and sensing element 34).

[0139] As Figure 9 shown, the first ends a1 of the sensing elements 31 in the first row and the first ends a1 of the sensing elements 32 can be simultaneously connected to the first signal trace Line1 to receive the potential VSS from the first signal trace Line1 respectively; in addition, the potential VSS can be transmitted to the first ends a1 of different rows along a fifth signal trace Line5. The first control ends a3 of the sensing element 31 and the first control ends a3 of the sensing element 32 can be simultaneously connected to the second signal trace Line2 to receive the first control signal Vg1 as the first control signal Vgn (marked in Figure 7 ). The second capacitors Cr2 of the sensing element 31 and the second capacitors Cr2 of the sensing element 32 can be simultaneously connected to the third signal trace Line3 to receive the first bias signal Vb1 from the third signal trace Line3 respectively. The third ends b1 of the sensing elements 31 in the first row and the third ends b1 of the sensing elements 32 can be simultaneously connected to a sixth signal trace Line6 to receive the potential VDD from the sixth signal trace Line6 respectively; in addition, the potential VDD can be transmitted to the third ends b1 of different rows along a seventh signal trace Line7. In addition, the first control ends a3 of the sensing elements 33 in the second row and the first control ends a3 of the sensing elements 34 can be connected to the fourth signal trace Line4 to receive the second control signal Vg2 as their own first control signal Vgn (marked in Figure 7). The second capacitor Cr2 of the sensing element 33 in the second row and the second capacitor Cr2 of the sensing element 34 can be simultaneously connected to the eighth signal trace Line8 to respectively receive the second bias signal Vb2 from the eighth signal trace Line8. The same applies to other parts.

[0140] Figure 10 is Figure 9 The signal timing diagram of the sensing element array of the embodiment. As Figure 9 and Figure 10 shown, in the first operation stage P1, multiple control signals (such as Vg1~Vgm, where m is a positive integer greater than 1) are respectively input to the first control terminals a3 of the sensing elements 2 in different rows, and sequentially turn into high potential at different time points to respectively serve as the first control signal Vgn of the sensing elements 2 in one row. In addition, in the second operation stage P2, multiple bias signals (such as Vg1~Vgm, where m is a positive integer greater than 1) sequentially turn into high potential at different time points and respectively serve as the bias signal Vb of the sensing elements 2 in one row. For other parts, refer to Figure 6 The same applies. Thus, the structure and operation of the sensing element array 30 of the second embodiment can be understood.

[0141] Next, the influence of the size of the sensing pad 4 is described. Sensing pads 4 of different sizes can support the touch of objects of different sizes. Taking a general touch display device as an example, the touch resolution of a touch display device that supports finger touch is about 6.2 pixels per inch (ppi) or less. Here, the touch resolution refers to the number of sensing pads included in a one-inch length in one direction (such as Figure 9 the extension direction of the first signal trace Line1 in the figure). Therefore, at this time, the size of the sensing pad 4 (that is, the maximum length measured in this direction) needs to be less than or equal to 4 millimeters (mm) in order to achieve the sensing of finger touch. And the touch resolution of the present invention can be greater than or equal to 80 ppi. At this time, the size of the sensing pad 4 needs to be less than or equal to 0.31 mm, so as to achieve the effect of high touch resolution and support the touch of fingers, styli, and touch brushes at the same time. For example, in one embodiment, the touch resolution can reach 127 ppi (that is to say, the size of the sensing pad 4 needs to be less than or equal to 0.2 mm), but the present invention is not limited thereto. Thus, the influence of the size of the sensing pad 4 on the present invention can be understood.

[0142] In one embodiment, the present invention can be used to prove whether an object falls within the scope of patent protection by comparing the presence or absence of components and their connection manners in the electronic device 1, and is not limited thereto. In one embodiment, the electronic device 1 obtained in the foregoing embodiment can be used as a touch device. Furthermore, if the electronic device 1 obtained in the foregoing embodiment of the present invention is an embodiment of a display device or a touch display device, it can be applied to any product that requires a display screen known in the art, such as a monitor, a mobile phone, a laptop computer, a camera, a digital camera, a music player, a mobile navigation device, a television, a vehicle dashboard, a center console, an electronic rearview mirror, a head-up display, etc., products that require displaying images.

[0143] Thereby, the present invention provides an improved electronic device, which can provide the effect of high touch resolution, or can simplify the circuit structure required to achieve the same touch resolution in the prior art, or can reduce the component cost required to achieve the same touch resolution in the prior art.

[0144] As long as the features between the embodiments of the present invention do not violate the spirit of the invention or conflict with each other, they can be arbitrarily combined and used.

[0145] The above embodiments are only examples for convenience of description. The scope of protection of the claims claimed by the present invention should be subject to what is described in the claims, rather than being limited to the above embodiments.

Claims

1. An electronic device, characterized in that, Comprising: A signal reading line; A sensing element electrically connected to the signal reading line, the sensing element comprising: A pixel sensor, comprising: A first transistor, comprising a first terminal, a second terminal and a first control terminal; A first capacitor electrically connected to the first control terminal and the second terminal; and A second transistor, comprising a third terminal, a fourth terminal and a second control terminal, wherein the fourth terminal is electrically connected to the signal reading line; and A sensing pad electrically connected to the second terminal; Wherein, the pixel sensor further comprises a second capacitor, the second capacitor is electrically connected to the second terminal and a bias signal, and a capacitance value of the second capacitor is greater than a capacitance value of the first capacitor.

2. The electronic device according to claim 1, wherein When no object approaches or contacts the sensing element, the sensing element outputs a first output value, and when an object approaches or contacts the sensing element, the sensing element outputs a second output value, and the first output value is different from the second output value.

3. The electronic device according to claim 1, wherein The pixel sensor further comprises a third transistor, the third transistor comprising a fifth terminal, a sixth terminal and a third control terminal, wherein the third control terminal is electrically connected to the second terminal, and the sixth terminal is electrically connected to the third terminal.

4. The electronic device according to claim 1, characterized in that, The second capacitor is 2 to 4 times the first capacitor.

5. The electronic device according to claim 1, wherein Further comprising another sensing element and a plurality of signal traces, wherein the sensing element and the another sensing element are electrically connected to the signal reading line and one of the plurality of signal traces.

6. The electronic device according to claim 5, characterized in that, The another sensing element comprises another first transistor, the another first transistor comprises another first control terminal, and the second control terminal and the another first control terminal are electrically connected to the one of the plurality of signal traces.

7. The electronic device according to claim 1, characterized in that, The resolution of the sensing pad needs to be greater than or equal to 80 ppi.

8. The electronic device according to claim 1, wherein The second control terminal is electrically connected to the second terminal.

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