Dielectric wetting signal switch and its preparation method

Abstract

This invention discloses a dielectric wetting signal switch and its preparation method. In the dielectric wetting signal switch, a dielectric layer is stacked on a driving electrode layer, and a common electrode layer is stacked on the dielectric layer and partially overlaps with the driving electrode layer. The top of the sealing wall is sealed to the upper electrode plate, and the bottom is sealed to the lower electrode plate to form a sealing structure. The sealing structure has holes with a predetermined geometric structure. A conductive droplet is contained in the holes, and the conductive droplet is in contact with both the common electrode and the signal electrode simultaneously, so that the signal flows through the conductive droplet through the signal electrode to achieve a conductive state. An insulating solution fills the gap between the conductive droplet and the sealing wall. When a driving voltage is applied to the driving electrode layer and the common electrode, the conductive droplet only contacts one of the common electrode and the signal electrode, and there is a break filled with insulating solution between the conductive droplet and the other non-contacting electrode to achieve a turn-off state.

Description

Technical Field

[0001] This invention belongs to the field of electrical and electronic switch technology, and in particular to a dielectric wetting signal switch and its preparation method. Background Technology

[0002] Electrical and electronic switches are essential control components in power transmission and signal transmission circuits. Common switching devices include mechanical switches and semiconductor switches. Both types of switches need to maintain stable circuit conduction in the closed state and cut off current and isolate the circuit in the open state.

[0003] Traditional mechanical switches use a pair of closed solid metal contacts to conduct current. Solid contacts also suffer from unstable contact resistance and severe insertion loss in high-frequency circuits. Mechanical wear during solid contact closure and arcing during current interruption also limit the lifespan and stability of mechanical switches. Semiconductor switches, while lacking mechanical movement and arcing during operation, rely on charge carrier conduction, inevitably resulting in significant conduction losses. Furthermore, semiconductor switches have a low on / off impedance ratio and limited isolation voltage withstand capability.

[0004] The use of conductive liquids as switch contacts, replacing the solid electrical contacts in traditional switches with liquid electrical contacts, is a solution to the inherent defects of traditional switches that has recently attracted widespread attention. Currently, commonly used conductive liquids can be categorized as mercury, gallium-based alloys, and aqueous solutions containing ions. Mercury is highly toxic and volatile, making its widespread application difficult. Aqueous solutions containing ions have high resistance, are prone to electrolysis, and have poor device stability. Gallium-based alloys are susceptible to oxidation.

[0005] The information disclosed in the background section is only intended to enhance the understanding of the background of the present invention, and therefore may contain information that does not constitute prior art known to those skilled in the art in this country. Summary of the Invention

[0006] To address the problems existing in the prior art, this invention proposes a dielectric wetting signal switch and its fabrication method. This solves the problems of complex manufacturing processes, mechanical wear, and contact surface degradation in traditional MEMS switches, as well as the high losses and low on / off impedance ratios of semiconductor switches. By controlling the morphology of conductive droplets, such as gallium indium tin alloy, through the dielectric wetting effect, the on / off state of the signal circuit can be controlled. Sealing the conductive droplets in an insulating solution prevents oxidation, significantly improving device lifespan.

[0007] The objective of this invention is achieved through the following technical solution: a dielectric wetting signal switch includes:

[0008] The lower electrode plate includes,

[0009] Drive electrode layer;

[0010] A dielectric layer, which is stacked on the driving electrode layer;

[0011] A common electrode is stacked on the dielectric layer and partially overlaps the driving electrode layer;

[0012] The upper electrode plate includes a signal electrode;

[0013] A sealing wall, the top end of which is sealed to the upper electrode plate and the bottom end of which is sealed to the lower electrode plate to form a sealing structure, the sealing structure having holes with a predetermined geometric structure;

[0014] A conductive droplet is contained in the hole, and the conductive droplet is in contact with both the common electrode and the signal electrode, so that the signal flows through the conductive droplet through the signal electrode to achieve a conductive state.

[0015] An insulating solution that fills the gap between the conductive droplet and the sealing wall;

[0016] When a driving voltage is applied to the driving electrode layer and the common electrode, the conductive droplet only contacts one of the common electrode and the signal electrode, and there is a break filled with insulating solution between the conductive droplet and the other non-contacting electrode to achieve the off state.

[0017] In the dielectric wetting signal switch, the conductive droplet includes a gallium indium tin alloy droplet, and the insulating solution includes an HCl silicone oil solution.

[0018] In the dielectric wetting signal switch, hydrochloric acid and octamethyltrisiloxane are mixed in a volume ratio of 1:1 to 5:1 and incubated for a predetermined time. After equilibrium is reached, the mixture is allowed to stand and separate to obtain the upper layer solution. Anhydrous magnesium sulfate is added to the upper layer solution and the mixture is filtered to obtain an HCl silicone oil solution.

[0019] In the dielectric wetting signal switch, the lower electrode plate includes a lower electrode plate substrate, a driving electrode layer stacked on the lower electrode plate substrate, a dielectric layer stacked on a portion of the driving electrode layer, a hydrophobic layer stacked on the dielectric layer, and a common electrode stacked on a portion of the hydrophobic layer. The upper electrode plate includes an upper electrode plate substrate and a signal electrode having a lower surface of the upper electrode plate.

[0020] In the dielectric wetting signal switch, both the lower electrode substrate and the upper electrode substrate are glass.

[0021] In the dielectric wetting signal switch, the sealing wall is a polydimethylsiloxane wall, which is a rectangular cubic structure with square holes.

[0022] In the dielectric wetting signal switch, the common electrode is composed of a central circular electrode and a rectangular electrode located at the edge of the device connected together.

[0023] In the dielectric wetting signal switch, the driving electrode layer and the common electrode are made of transparent conductive indium tin oxide material.

[0024] In the dielectric wetting signal switch described above, the dielectric layer is made of silicon nitride material.

[0025] The fabrication method of the dielectric wetting signal switch includes the following steps:

[0026] Step 1, fabrication of the lower electrode plate: A thin film is deposited on the surface of the lower electrode plate substrate by magnetron sputtering, a driving electrode layer is formed by laser etching, a dielectric layer is then fabricated by magnetron sputtering, a hydrophobic layer is fabricated by spin coating, and a common electrode is then fabricated by magnetron sputtering.

[0027] Step 2, Preparation of the upper electrode plate: A thin film is deposited on the surface of the upper electrode plate substrate using magnetron sputtering to obtain the signal electrode layer;

[0028] Step 3, Preparation of sealing wall: Mix the polydimethylsiloxane wall PDMS stock solution and crosslinking agent at a volume ratio of 5:1-10:1, stir and degas, then pour into a mold, heat at 80-150℃ for 5-30 minutes, then demold to obtain the sealing wall;

[0029] Step 4: Prepare HCl silicone oil solution by mixing hydrochloric acid and octamethyltrisiloxane in a volume ratio of 1:1 to 5:1, incubating for a predetermined time, allowing it to stand at equilibrium, separating the upper layer solution, adding anhydrous magnesium sulfate, and filtering to obtain HCl silicone oil solution.

[0030] Step 5: Perform plasma cleaning on the sealed wall, upper electrode plate, and lower electrode plate;

[0031] Step 6: Within 10 minutes after step 5 is completed, tightly attach the sealing wall to the lower electrode plate, aligning the center of the hole in the sealing wall with the center circular electrode of the common electrode; place a conductive droplet in the hole and inject HCl silicone oil solution into the hole; tightly attach the upper electrode plate to the sealing wall and align the edges of the upper electrode plate with the lower electrode plate to form a dielectric wetting signal switch.

[0032] Compared with existing technologies, this invention has the following advantages: This invention drives a morphological change in gallium indium tin alloy (GaInTl) through dielectric wetting, thereby controlling the on / off state of the signal circuit. This switching device overcomes the difficulties in fabrication and contact wear of traditional MEMS switches, as well as the low on / off impedance ratio of semiconductor switches. This switch ensures a good electrowetting effect and a large on / off impedance ratio. This device features simple control, excellent performance, and extremely long lifespan, greatly expanding the application scope of technologies such as microswitches. This invention uses conductive droplets of GaInTl as switch contacts to achieve liquid electrical contact, solving the inherent defects of traditional mechanical and semiconductor switches. It also has advantages such as being non-toxic, non-evaporating, and having high conductivity. Using an insulating solution such as HCl silicone oil solution to encapsulate the conductive solution of GaInTl avoids oxidation defects in GaInTl, greatly improving device lifespan. The sealed structure seals the HCl silicone oil solution and GaInTl alloy, preventing leakage and improving device reliability. The switch is controlled using dielectric wetting technology; the switching effect is controlled by designing the PDMS wall height and droplet volume, which is simple and easy to implement. By controlling the signal conduction by whether the upper and lower plates are connected by a droplet, the device can be flipped and shaken without affecting its use, thus broadening its application range and reducing its usage limitations. Attached Figure Description

[0033] Various other advantages and benefits of the present invention will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. It is obvious that the drawings described below are merely some embodiments of the invention, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. Furthermore, the same reference numerals denote the same parts throughout the drawings.

[0034] In the attached diagram:

[0035] Figure 1 This is a schematic diagram of the conduction state of a dielectric wetting signal switch according to an embodiment of the present invention;

[0036] Figure 2 This is a schematic diagram of the off state of a dielectric wetting signal switch according to an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram of the structure of a dielectric wetting signal switch according to an embodiment of the present invention.

[0038] The present invention will be further explained below with reference to the accompanying drawings and embodiments. Detailed Implementation

[0039] The following will refer to the attached diagram. Figures 1 to 3 Specific embodiments of the invention will be described in more detail below. While specific embodiments of the invention are shown in the accompanying drawings, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the invention and to fully convey the scope of the invention to those skilled in the art.

[0040] It should be noted that certain terms are used in the specification and claims to refer to specific components. Those skilled in the art will understand that different terms may be used to refer to the same component. This specification and claims do not distinguish components based on differences in terminology, but rather on differences in function. The terms "comprising" or "including" used throughout the specification and claims are open-ended and should be interpreted as "comprising but not limited to." The following descriptions are preferred embodiments for carrying out the invention; however, these descriptions are for the purpose of understanding the general principles of the specification and are not intended to limit the scope of the invention. The scope of protection of this invention is determined by the appended claims.

[0041] To facilitate understanding of the embodiments of the present invention, further explanations and descriptions will be provided below with reference to the accompanying drawings and specific embodiments. The accompanying drawings do not constitute a limitation on the embodiments of the present invention.

[0042] To better understand, such as Figures 1 to 3 As shown, in one embodiment, the dielectric wetting signal switch includes a lower electrode 100, an upper electrode 200, a sealing wall 300 such as a PDMS wall, a conductive droplet 400, and an insulating solution 500 such as an HCl silicone oil solution.

[0043] The lower electrode 100 is constructed from bottom to top by a substrate 101, a driving electrode layer 102, a dielectric layer 103, a hydrophobic layer 104, and a common electrode 105. The common electrode 105 consists of a central circular electrode and a rectangular electrode located at the edge of the device connected together. The upper electrode is constructed from top to bottom by an upper electrode substrate 201 and a signal electrode layer 202. The lower electrode 100 and the upper electrode 200 are separated by a PDMS wall 300. The PDMS wall 300 is a rectangular cubic structure with a square perforation. The droplet 400 is located in the perforation of the PDMS wall 300, between the common electrode 105 and the signal electrode layer 202, and is in contact with both the common electrode 105 and the signal electrode layer 202 when no external driving voltage is applied. The gap between the PDMS wall 300 and the droplet 400 is filled with an HCl silicone oil solution 500.

[0044] When the droplet 400 is in contact with both signal electrodes 105 and 202 simultaneously, the signal switch is in the ON state; when the droplet 400 is not in contact with both signal electrodes 105 and 202 simultaneously, the signal switch is in the OFF state. Both the lower electrode substrate 101 and the upper electrode substrate 201 are made of glass. The driving electrode layer 102 and the common electrode 105 are made of transparent, conductive indium tin oxide. The dielectric layer 103 is made of silicon nitride with a high dielectric constant. The hydrophobic layer 104 is made of a hydrophobic material, which includes any one of Teflon AF 1600, Teflon AF 2400, PT95, and PT610. The HCl silicone oil solution is octamethyltrisiloxane containing concentrated HCl molecules; the breakdown field strength of the HCl silicone oil solution is approximately 10 V / μm; the HCl silicone oil solution must be stored in a sealed container.

[0045] The switch provided by this invention is achieved through the preparation of HCl silicone oil solution, the matching of droplet and PDMS wall height, and the regulation of driving voltage. Therefore, there are multiple configuration methods, and it can be customized according to parameter requirements and usage purposes.

[0046] This invention provides a long-life dielectric wetting signal switch as a three-electrode system. Compared to a four-electrode system (which includes two driving electrodes and two signal electrodes), its advantage lies in the presence of a common electrode, simplifying the structure and enabling more flexible structural design. The common electrode refers to an electrode that serves as both a driving electrode and a signal electrode. In this embodiment, the common electrode 105 is shared by the lower plate signal electrode and one driving electrode.

[0047] In one embodiment, the longitudinal cross-sectional view of the schematic structural diagram is as follows: Figure 1 As shown, it includes: a lower electrode 100, an upper electrode 200, a PDMS wall 300, a droplet 400, and an HCl silicone oil solution 500. The lower electrode 100 is formed by sequentially stacking a lower electrode substrate 101, a driving electrode layer 102, a dielectric layer 103, a hydrophobic layer 104, and a lower electrode signal electrode 105. The upper electrode is formed by sequentially stacking a substrate 201 and an upper electrode signal electrode 202. The electrowetting driving electrode 101 and the signal electrode 105 partially overlap, and the driving electrode 101 and the common electrode 105 are isolated by the dielectric layer 103 and the hydrophobic layer 104.

[0048] Preferably, the driving electrode layer 102 has a thickness of about 200 nm, the dielectric layer 103 has a thickness of about 500 nm, the hydrophobic layer 104 has a thickness of about 100 nm, the common electrode 105 has a thickness of about 200 nm, the upper electrode signal electrode 202 has a thickness of about 200 nm, the PDMS wall 300 has a height of 2.2 mm, and the droplet 400 has a volume of 10 μL.

[0049] The material used for the substrate 101 is not fixed, as long as it is insulating. However, to facilitate observation of the switch's operating state and save costs, glass with good light transmittance is preferred. The driving electrode layer 102 can, in principle, be composed of any conductive material, but to facilitate observation of the switch's operating state, indium tin oxide (ITO), a transparent conductive material, is preferred. The driving electrode layer 202 can, in principle, be composed of any conductive material, but to simplify the chip fabrication process, the same material as the driving electrode layer 102 is preferred. The dielectric layer 103 needs to cover most of the surface of the driving electrode layer 202, with only a small amount of surface exposed at the device edge for connection to external circuits. The hydrophobic layer 104 completely covers the dielectric layer 103. The height of the PDMS wall 300 and the volume of the droplet 400 should be such that, when no voltage is applied, the droplet can almost just connect the upper and lower electrodes 105 and 202. The dimensions of all electrodes and the number of switches on the substrate are not limited. This description only uses the fabrication of one switch on a single substrate as an example. The accompanying diagram at the end is only a schematic diagram and does not accurately reflect the position and arrangement of the electrodes.

[0050] Below, in conjunction with Figure 1 and Figure 2 The working principle of the above embodiments will be explained in detail. Among them, Figure 1 This is a cross-sectional view of the switch in the ON state. Figure 2 This is a cross-sectional view of a long-life dielectric wetting signal switch in the off state. Figure 3 It is a three-dimensional image of a long-life dielectric wetting signal switch. Figure 1 and Figure 2 They are respectively Figure 3 The diagram shows cross-sectional views of the switching device in both on and off states.

[0051] In this invention, the "conducting state" refers to the droplet 400 being in contact with both the common electrode 105 and the upper plate signal electrode 202, allowing the signal to flow through the droplet via the signal electrode. The "closing state" refers to the droplet 400 being in contact with only one of the common electrode 105 and the upper plate signal electrode 202. In this case, there is a break between the droplet and the other non-contacting electrode, and this break is filled with insulating HCl silicone oil solution, blocking the signal flow.

[0052] This switch is a normally closed switch. Applying a drive signal and then removing it after a period of time constitutes one complete control cycle. The opening and closing principle of this embodiment in this working cycle is explained below.

[0053] like Figure 1 As shown, when no driving voltage is applied, the droplet 400 contacts both the common electrode 105 and the upper plate signal electrode 202, and the switch is in the on state. At this time, the working circuit forms a closed loop, and the working signal can be... Figure 1 The flow path is shown in the rounded rectangle.

[0054] like Figure 2 As shown, when a driving voltage is applied between the driving electrode 102 and the common electrode 105, the droplet 400 deforms under the action of dielectric wetting, its contact angle with the lower electrode plate decreases, while there is no dielectric wetting with the upper electrode plate, and the contact angle remains unchanged. Under this difference, the droplet spreads out on the lower electrode plate, thereby pulling the part of the droplet near the upper electrode plate to move towards the lower electrode plate, causing the upper part of the droplet to contract. When the driving voltage reaches a certain value, the droplet will detach from the upper electrode plate. Subsequently, the higher the driving voltage, the lower the droplet height. A break is formed between the droplet 400 and the upper electrode plate signal electrode 202, which is filled by the insulating medium HCl silicone oil solution 500, thus disconnecting the working circuit.

[0055] like Figure 1 As shown, when the driving signal is removed, the dielectric wetting effect disappears, the contact angle of the droplet returns to its original state, and the droplet shape also returns to its initial state, squeezing the HCl silicone oil solution in the fracture surface to the area around the droplet, connecting the signal electrodes 105 and 202, and making the working circuit conductive.

[0056] In this invention, applying the driving voltage means that, during droplet manipulation, the voltage between the driving electrode 102 and the supply electrode 105 is set to a voltage greater than the electrowetting threshold, so that the voltage is sufficient to induce a dielectric wetting effect. Preferably, this value is 60V. Removing the driving signal means that, during droplet manipulation, the voltage of the corresponding electrode is set to 0V.

[0057] HCl silicone oil solution encapsulates gallium indium tin alloy droplets and seals them within the device, providing long-term protection against oxidation and achieving insulation. The principle is that HCl forms hydrogen bonds with the oxygen in octamethyltrisiloxane, and most H and Cl atoms maintain covalent bonds with minimal dissociation, thus ensuring stable insulation performance. When oxides are present on the gallium indium tin alloy surface, HCl reacts with the oxides, reducing them to metal and generating water. Furthermore, the device is isolated from the external atmosphere; any residual oxygen in the cavity during device fabrication can be completely removed by the HCl silicone oil solution. After device encapsulation, the amount of oxygen entering from the atmosphere is extremely low; any trace oxidation of the liquid metal will immediately react with the HCl silicone oil solution, removing the oxide layer.

[0058] The method for preparing the dielectric wetting signal switch of the present invention is as follows:

[0059] Step 1: Fabrication of the lower electrode: An ITO thin film is deposited on the surface of a glass substrate by magnetron sputtering, a driving electrode layer is formed by laser etching, a silicon nitride dielectric layer is then prepared by magnetron sputtering, a PT 610 hydrophobic layer is then prepared by spin coating, and an ITO signal electrode layer is then fabricated by magnetron sputtering.

[0060] Step 2, Fabrication of the upper electrode: A thin film is formed on the substrate surface by magnetron sputtering to obtain the ITO signal electrode;

[0061] Step 3, Preparation of PDMS wall: Mix PDMS stock solution and crosslinking agent at a volume ratio of 5:1 to 10:1, stir, degas, and then pour into a mold. Heat at 80 to 150°C for 5 to 30 minutes, and then demold to obtain PDMS wall.

[0062] Step 4: Prepare the HCl silicone oil solution by mixing concentrated or dilute hydrochloric acid with octamethyltrisiloxane at a volume ratio of 1:1 to 5:1, incubating for 12 hours, equilibrating for 16 to 18 hours, and then allowing it to stand for a period of time to separate the supernatant solution. Add anhydrous magnesium sulfate and filter to obtain the HCl silicone oil solution.

[0063] Step 5: Perform plasma cleaning on the PDMS wall, upper electrode plate, and lower electrode plate;

[0064] Step 6: Within 10 minutes of completing Step 5, tightly attach the PDMS wall to the lower electrode plate, aligning the center of the pores in the PDMS wall with the center circular electrode of the signal electrode layer; place a droplet in the pores of the PDMS wall, and then inject HCl silicone oil solution into the pores; tightly attach the upper electrode plate to the PDMS wall, aligning the edges of the upper electrode plate with those of the lower electrode plate. Assemble to form the long-life dielectric wetting signal switch.

[0065] In this embodiment, the thickness of the glass substrate 101 can be selected from 0.5 to 1.1 mm, and the thickness of the glass substrate 201 can be selected from 0.1 to 1.1 mm.

[0066] In another embodiment, as an alternative to this solution, the signal electrode layer and the common electrode material ITO can be replaced with conductive materials such as Ti, Cu, Ag, Ni, W, and nickel-chromium alloys.

[0067] In another embodiment, as an alternative to this solution, PDMS can be replaced with materials with better light transmittance, such as SU-8 or acrylic.

[0068] In another embodiment, as an alternative to this scheme, octamethyltrisiloxane can be replaced with OS-20.

[0069] In another embodiment, as an alternative to this solution, the magnetron sputtering process can be replaced by chemical vapor deposition, physical vapor deposition, or other processes depending on the material being processed.

[0070] In another embodiment, as an alternative to this approach, the plasma cleaning process can be replaced with other bonding processes depending on the material.

[0071] In another embodiment, as an alternative to this approach, the positive and negative terminals of the power supply for applying the driving voltage to the dielectric layer and the hydrophobic layer can be reversed.

[0072] Although embodiments of the present invention have been described above in conjunction with the accompanying drawings, the present invention is not limited to the specific embodiments and application fields described above. The specific embodiments described above are merely illustrative and instructive, and not restrictive. Those skilled in the art can make many other forms based on the guidance of this specification and without departing from the scope of protection of the claims of the present invention, and all of these are within the scope of protection of the present invention.

Claims

1. A dielectric wetting signal switch, comprising, The lower electrode plate includes, Drive electrode layer; A dielectric layer, which is stacked on the driving electrode layer; A common electrode is stacked on the dielectric layer and partially overlaps the driving electrode layer; The upper electrode plate includes a signal electrode; A sealing wall, the top end of which is sealed to the upper electrode plate and the bottom end of which is sealed to the lower electrode plate to form a sealing structure, the sealing structure having holes with a predetermined geometric structure; A conductive droplet is contained in the hole, and the conductive droplet is in contact with both the common electrode and the signal electrode, so that the signal flows through the conductive droplet through the signal electrode to achieve a conductive state. An insulating solution is used to fill the gap between the conductive droplet and the sealing wall; the insulating solution is an HCl silicone oil solution. When a driving voltage is applied to the driving electrode layer and the common electrode, the conductive droplet only contacts one of the common electrode and the signal electrode. There is a break filled with insulating solution between the conductive droplet and the other non-contacting electrode to achieve the off state. The common electrode is composed of a central circular electrode and a rectangular electrode located at the edge of the device connected together. When the driving voltage is applied between the driving electrode and the common electrode, the conductive droplet deforms under the action of dielectric wetting. Its contact angle with the lower electrode plate becomes smaller, while there is no dielectric wetting with the upper electrode plate, and the contact angle remains unchanged. The conductive droplet spreads on the lower electrode plate, thereby pulling the part of the conductive droplet near the upper electrode plate to move to the lower electrode plate, causing the upper part of the conductive droplet to contract. When the driving voltage reaches a certain value, the conductive droplet detaches from the upper electrode plate. Subsequently, the higher the driving voltage, the lower the height of the conductive droplet. A break is formed between the conductive droplet and the signal electrode, which is filled with insulating solution, thus disconnecting the working circuit.

2. The dielectric wetting signal switch according to claim 1, wherein, The conductive droplet is a gallium indium tin alloy droplet.

3. The dielectric wetting signal switch according to claim 2, wherein, Hydrochloric acid and octamethyltrisiloxane are mixed in a volume ratio of 1:1 to 5:1 and incubated for a predetermined time. After equilibrium is reached, the mixture is allowed to stand and the supernatant is separated. Anhydrous magnesium sulfate is added to the supernatant and the mixture is filtered to obtain an HCl silicone oil solution.

4. The dielectric wetting signal switch according to claim 1, wherein, The lower electrode plate includes a lower electrode plate substrate, a driving electrode layer stacked on the lower electrode plate substrate, a dielectric layer stacked on a portion of the driving electrode layer, a hydrophobic layer stacked on the dielectric layer, and a common electrode stacked on a portion of the hydrophobic layer. The upper electrode plate includes an upper electrode plate substrate and a signal electrode disposed on the lower surface of the upper electrode plate substrate.

5. The dielectric wetting signal switch according to claim 4, wherein, Both the lower electrode substrate and the upper electrode substrate are made of glass.

6. The dielectric wetting signal switch according to claim 1, wherein, The sealing wall is a polydimethylsiloxane wall, which is a rectangular cubic structure with square holes.

7. The dielectric wetting signal switch according to claim 1, wherein, The driving electrode layer and the common electrode are made of transparent and conductive indium tin oxide.

8. The dielectric wetting signal switch according to claim 1, wherein, The dielectric layer is made of silicon nitride.

9. The method for preparing a dielectric wetting signal switch according to any one of claims 1-8, characterized in that, It includes the following steps, Step 1, fabrication of the lower electrode plate: A thin film is deposited on the surface of the lower electrode plate substrate by magnetron sputtering, a driving electrode layer is formed by laser etching, a dielectric layer is then fabricated by magnetron sputtering, a hydrophobic layer is fabricated by spin coating, and a common electrode is then fabricated by magnetron sputtering. Step 2, Preparation of the upper electrode plate: A thin film is deposited on the surface of the upper electrode plate substrate using magnetron sputtering to obtain the signal electrode layer; Step 3, Preparation of sealing wall: Mix the polydimethylsiloxane wall PDMS stock solution and crosslinking agent at a volume ratio of 5:1-10:1, stir and degas, then pour into a mold, heat at 80-150℃ for 5-30 minutes, then demold to obtain the sealing wall; Step 4: Prepare HCl silicone oil solution by mixing hydrochloric acid and octamethyltrisiloxane in a volume ratio of 1:1 to 5:1, incubating for a predetermined time, allowing it to stand at equilibrium, separating the upper layer solution, adding anhydrous magnesium sulfate, and filtering to obtain HCl silicone oil solution. Step 5: Perform plasma cleaning on the sealed wall, upper electrode plate, and lower electrode plate; Step 6: Within 10 minutes after step 5 is completed, tightly attach the sealing wall to the lower electrode plate, aligning the center of the hole in the sealing wall with the center circular electrode of the common electrode; place a conductive droplet in the hole and inject HCl silicone oil solution into the hole; The upper electrode plate is tightly fitted to the sealing wall, and the edges of the upper electrode plate and the lower electrode plate are aligned to form a dielectric wetting signal switch.

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