Substrate processing device and ion implanter adjustment method

Abstract

The present disclosure provides a substrate processing apparatus and an adjustment method for an ion implanter. The substrate processing apparatus includes an ion implanter and a processor associated with the ion implanter. The ion implanter is configured to implant a plurality of ions into a substrate using an ion beam. The processor is configured to monitor an initial implantation profile of the ion beam and adjust the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and a desired implantation profile.

Description

[0001] This application claims priority to and the benefit of U.S. regular application No. 17 / 185,085, filed on February 25, 2021, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a substrate processing device and a control method for the substrate processing device, and more particularly to an ion implanter and a control method for the ion implanter. Background Art

[0003] Ion beam implanters are used to implant various dopants into silicon wafers to produce n-type or p-type extrinsic materials. Various n-type and p-type extrinsic materials are used in the production of semiconductor integrated circuits. The ion beam implanter implants a selected ion species into the silicon wafer to produce the desired extrinsic material. Implanted ions from source materials such as antimony, arsenic, or phosphorus result in an n-type extrinsic material wafer. If a p-type extrinsic material is desired, it is implanted from a source material such as boron, gallium, or indium.

[0004] The above description of “prior art” only provides background technology, does not admit that the above description of “prior art” discloses the subject matter of the present disclosure, does not constitute the prior art of the present disclosure, and any description of “prior art” above should not be regarded as any part of the present invention. Summary of the Invention

[0005] One embodiment of the present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes an ion implanter and a processor associated with the ion implanter. The ion implanter is configured to implant an ion beam into a substrate. The processor is configured to monitor an initial profile of the ion beam and automatically adjust the ion implanter to provide the ion beam with a desired implant profile based on the initial implant profile and a desired implant profile.

[0006] In some embodiments, a plurality of implantation parameters are manually generated, the plurality of implantation parameters generating the ion beam having the initial implantation profile.

[0007] In some embodiments, the processor is further configured to create a model script corresponding to the expected injection profile.

[0008] In some embodiments, the substrate processing apparatus further includes a database associated with the processor and storing the model script.

[0009] In some embodiments, the processor is associated with the ion implanter via a hard-wire connection or a wireless coupling.

[0010] In some embodiments, the processor is further configured to determine whether a match exists between the expected implant profile and at least one model script, and to adjust the ion implanter based on the model script matching the expected implant profile.

[0011] In some embodiments, the processor derives the initial implant profile based on characteristics measured by an ion beam detector, a beam profiler, and an incident angle detector of the ion implanter.

[0012] In some embodiments, the ion implanter includes an ion source powered by the processor and configured to ionize a gas; a source manipulator that extracts a plurality of ions within the ion source to form the ion beam; a mass analyzer that provides a magnetic field to select the correct ions for implantation; a beam manipulator that receives the ion beam from the mass analyzer and manipulates the shape of the ion beam using a magnetic field; and a multipole unit and up / down rods that use electrical power to direct the desired plurality of ions toward the substrate. The processor adjusts the ion implanter to generate the ion beam by adjusting at least one of a potential applied to the ion source, the multipole unit, and the up / down rods, and the magnetic field of the mass analyzer and the beam manipulator.

[0013] In some embodiments, the mass analyzer further includes a resolving aperture to filter out unwanted species.

[0014] In some embodiments, the initial implant profile and the desired implant profile include at least one of: an ion beam current exiting the resolving aperture, an implantation current, and an incident angle of the ion beam approaching an implantation platform supporting a substrate.

[0015] In some embodiments, the ion beam current is detected by the ion beam detector, the injection current is tracked by the beam profiler, and the incident angle of the ion beam is scanned by the incident angle detector.

[0016] Another embodiment of the present disclosure provides a method for adjusting an ion beam in an ion implanter. The method includes obtaining an initial implant profile of the ion beam generated using an initial script; determining whether the initial implant profile matches an expected implant profile; if the initial implant profile does not match the expected implant profile, automatically generating an updated script based on the initial implant profile and the expected implant profile; determining whether an adjusted implant profile of the ion beam generated using the updated script matches the expected implant profile; and if the updated script matches the expected implant profile, performing an ion implantation process to implant ions into a substrate.

[0017] In some embodiments, the adjustment method further includes establishing a model script corresponding to the expected injection profile.

[0018] In some embodiments, the initial script for generating the ion beam having the initial implant profile is manually generated.

[0019] In some embodiments, the plurality of implantation parameters for generating the ion beam having the initial implantation profile are manually input.

[0020] In some embodiments, the ion beam having the desired implant profile is provided by executing the initialization script.

[0021] Due to the above-described architecture of the ion implanter, the ion beam can be automatically adjusted based on the initial implant profile and a plurality of model scripts, and additional scripts can be automatically created to improve implant accuracy.

[0022] The above has been a fairly broad overview of the technical features and advantages of the present disclosure so that the detailed description of the present disclosure below can be better understood. Other technical features and advantages that constitute the subject matter of the claims of the present disclosure will be described below. It should be understood by those skilled in the art of the present disclosure that the concepts and specific embodiments disclosed below can be readily utilized to modify or design other structures or processes to achieve the same purposes as those of the present disclosure. It should also be understood by those skilled in the art of the present disclosure that such equivalent constructions cannot depart from the spirit and scope of the present disclosure as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] A more complete understanding of the disclosure of the present invention may be obtained by referring to the detailed description and claims in conjunction with the accompanying drawings, in which like reference numerals refer to like elements.

[0024] Figure 1 Schematic plan view illustrating a substrate processing apparatus according to some embodiments of the present disclosure.

[0025] Figure 2 is a circuit block diagram illustrating a substrate processing apparatus according to some embodiments of the present disclosure.

[0026] Figure 3 is a schematic plan view illustrating an ion implanter according to some embodiments of the present disclosure.

[0027] Figure 4 is a circuit block diagram illustrating an ion implanter according to some embodiments of the present disclosure.

[0028] Figures 5A to 5D is a circuit block diagram illustrating an ion implantation apparatus according to some embodiments of the present disclosure.

[0029] Figure 6 is a flow chart illustrating the operating method of the ion implanter according to some embodiments of the present disclosure.

[0030] The reference numerals are as follows:

[0031] 10: Substrate processing device

[0032] 100:Semiconductor substrate

[0033] 110: Processing Chamber

[0034] 112: Injection Platform

[0035] 120:Transmission Chamber

[0036] 122:Robotic Arm

[0037] 1222:Moving arm

[0038] 1224: Base retainer

[0039] 130: Input / Output Cabin

[0040] 140a: Gate valve

[0041] 140b: Gate valve

[0042] 150:Controller

[0043] 160: Vacuum device

[0044] 20: Ion implanter

[0045] 200: Ion beam

[0046] 210: Processor

[0047] 220: ion source

[0048] 222: Arc Power Supply

[0049] 230: Source Manipulator

[0050] 232: Extraction electrode

[0051] 240:Mass Analyzer

[0052] 242: Magnet

[0053] 244: Parsing hole

[0054] 250: Ion beam detector

[0055] 260:Beam Manipulator

[0056] 262: Calibration magnet

[0057] 270: Multi-pole unit

[0058] 272:Multi-pole power supply

[0059] 280: Up / Down

[0060] 282:Multi-pole power supply

[0061] 290: Pressed components

[0062] 30: Database

[0063] 32: Network

[0064] 310: Incident angle detector

[0065] 320: Beam Profiler

[0066] 400: Operation method

[0067] S402: Step

[0068] S404: Step

[0069] S406: Step

[0070] S408: Step

[0071] S410: Step

[0072] S412: Step

[0073] S414: Step DETAILED DESCRIPTION

[0074] Specific language will now be used to describe the embodiments or examples of the present disclosure shown in the accompanying drawings. It should be understood that the scope of the present disclosure is not intended to be limited thereby. Any modifications or improvements to the described embodiments, as well as any further applications of the principles described in this document, will be considered by those skilled in the art to be generally applicable. Element numbers may be repeated throughout the embodiments, but this does not necessarily mean that the features of one embodiment are applicable to another embodiment, even if they share the same element number.

[0075] It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe different elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, a "first element," "component," "region," "layer," or "section" discussed below could be referred to as a second element, component, region, layer, or portion without departing from the teachings herein.

[0076] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the present invention. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that when the terms "comprises" and / or "comprising" are used in this specification, the plural terms specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0077] Figure 1 FIG is a schematic plan view illustrating a substrate processing apparatus 10 according to some embodiments of the present disclosure. Figure 1 A substrate processing apparatus 10 for processing a plurality of semiconductor substrates 100, such as silicon wafers, includes at least one processing chamber 110 in which the plurality of substrates 100 are processed; a transfer chamber 120 through which the plurality of substrates 100 are moved before and after being processed in the processing chamber 110; and one or more transfer interface chambers 130 for storing the plurality of substrates 100 before and after they are moved through the transfer chamber 120.

[0078] The transfer chamber 120 includes at least one robot handler 122 adapted to pick up, transfer, and deliver a plurality of substrates 100 between the process chamber 110 and the transfer interface chamber 130. The robot handler 122 may have a plurality of interconnected moving arms 1222 to allow a substrate holder 1224 to move radially to pick up and place the plurality of substrates 100 while maintaining a desired angular orientation of the plurality of substrates 100.

[0079] The substrate processing apparatus 10 further includes a plurality of gate valves 140 a and 140 b configured to isolate the transfer interface chamber 130 from the transfer chamber 120 and the process chamber 110. The gate valves 140 a and 140 b can be opened or closed. When the gate valves 140 a and 140 b are in the closed position, the gate valves 140 a and 140 b seal the transfer interface chamber 130, thereby sealingly isolating the transfer interface chamber 130 from the transfer chamber 120. When the gate valves 140 a and 140 b are in the open position, the gate valves 140 a and 140 b allow the robot 122 to load and unload substrates 100 placed in the process chamber 110 and the transfer interface chamber 130. Each gate valve 140 a and 140 b is opened only when a substrate 100 passes through the gate valve 140 a and 140 b and is closed at all other times.

[0080] The processed substrates 100 (or untreated substrates) stored in one of the transfer interface chambers 130 may be transferred to the process chamber 110 by the robot arm 122 in conjunction with the opening and closing of the gate valve 140 a. After undergoing one or more processes, the processed substrates 100 may be transferred from the process chamber 110 to another transfer interface chamber 130 by the robot arm 122 in conjunction with the opening and closing of the gate valve 140 b.

[0081] like Figure 2 As shown, the entire operation of transferring multiple substrates 100 can be controlled by a controller 150, which is electrically connected to the robot arm 120 and the gate valves 140a, 140b. Figure 2 , the controller 150 can control some or all operations of the substrate processing apparatus 10. In some embodiments, the controller 150 can determine whether each gate valve 140a, 140b is open or closed based on a transfer path of the robot arm 122. In addition, various different processes at the processing chamber 110 can be controlled by changing the program of the controller 150. That is, the process at the processing chamber 110 can be affected according to a changed processing sequence. For example, the controller 150 can execute a plurality of machine-readable control instructions to control the chamber pressure and other parameters of a specific process performed in the processing chamber 110. The processing chamber 110 is evacuated to at least a predetermined pressure by at least one vacuum device 160 electrically coupled to the main controller 150.

[0082] Figure 3 is a schematic plan view illustrating an ion implanter 20 according to some embodiments of the present disclosure. Figure 4 is a circuit block diagram illustrating an ion implanter 20 according to some embodiments of the present disclosure. Figure 3 and Figure 4The ion implanter 20 is configured to implant a plurality of ions into a substrate 100 located in a process chamber 100 for ion implantation. The ion implanter 20 for implanting a plurality of ions into the substrate 100 using an ion beam 200 includes a processor 210, an ion source 220, a source manipulator 230, a mass analyzer 240, an ion beam detector 250, a beam manipulator 260, a multipole unit 270, one or more upper / lower rods 280, and a pressing assembly 290.

[0083] The processor 210 may reside in a personal computer (PC) having a memory for storing instructions for executing the processor 210 or data for operating on the processor 210. During the execution of the instructions, the processor 210 may perform additional operations, functions, and controls of the ion implanter 20. In other embodiments, the PC may further include a central processing unit (CPU) to control and coordinate various operations of the PC.

[0084] The ion beam 200 generated by the ion source 220 and the source manipulator 230 is directed to a mass analyzer 240, which is used to select ions of multiple desired species for implantation. The ion beam detector 250 is configured to measure characteristics of the ion beam 200, wherein the ion beam detector 250 is operatively coupled to the processor 210, and the processor 210 is operable to determine whether one or more characteristics of the ion beam 200 meet the requirements for ion implantation.

[0085] In some embodiments, the ion source 220 is used to ionize an ionizable dopant gas, such as BF3, PH3, or AsH3, which contains a plurality of ionized species, such as boron (B), phosphorus (P), or arsenic (As). Energy generated by an arc power supply 222 is imparted to the ionizable dopant gas to generate the ions within the ion source 220. In some embodiments, the gas is ionized primarily by electrons generated by arc discharge collisions bombarding atoms or molecules.

[0086] The ions generated within the ion source 220 are extracted by the source manipulator 230 to form the ion beam 200, wherein the ion beam 200 is a mixture of different portions of molecules and atoms of the ionizable dopant gas. The source manipulator 230 may include one or more extraction electrodes 232 operable to accelerate and extract the positive ions from the ion source 230. In some embodiments, the extraction electrodes 232, electrically coupled to the processor 210, are grounded to extract the positive ions from the ion source 220.

[0087] When high purity is required, the ion beam 200 is directed through a mass analyzer 240 electrically coupled to the processor 210 to determine the species being implanted. Furthermore, the mass analyzer 240 can focus and be configured to deflect the ion beam 200 in two dimensions so that the ion beam 200 passes neatly through a resolving aperture 244. In some embodiments, the mass analyzer 240 can include a plurality of magnets 242, such as electromagnets, that provide a magnetic field across the ion beam 200, thereby deflecting the ions from the ion beam 200 in various trajectories depending on their charge-to-mass ratios. The magnets 242 perform mass analysis and angular correction / adjustment on the ion beam 200. The resolving aperture 244 is used to remove unwanted components from the ion beam 200. In some embodiments, the ion beam 200 approaching the mass analyzer 240 has a specific energy in terms of its momentum. Since each ion species has a different mass, all ions contained in the ion beam 200 having an unexpected beam have a specific momentum value. By adjusting the magnetic field strength of a plurality of magnets 242 positioned along the beam path, only those desired ions having a particular momentum are allowed to pass through the mass analyzer 240 and exit through the desorption aperture 244. The mass analyzer 240 is operatively coupled to a processor 210, which is operable to control the strength (and orientation) of the magnetic field of the mass analyzer 240.

[0088] The ion beam detector 250 is configured to measure a plurality of physical parameters of the ion beam 200 having a plurality of desired ions. The ion beam detector 250 is a movable measurement type that can be moved between a beam scanning position and a retreated position. In some embodiments, the ion beam detector 250 measures the plurality of physical parameters at the beam scanning position while moving vertically from the retreated position to a position perpendicular to the ion beam 200 and immediately behind the resolving aperture 244. After the measurement, the ion beam detector 250 retreats from the beam scanning position. The ion beam detector 250 is also configured to generate an implantation profile based on the plurality of measured physical parameters, the plurality of measured physical parameters including one or more of the following: a current of the ion beam 200 (i.e., the ion beam current) and a size (spot size) of the ion beam 200 when focused.

[0089] The beam manipulator 260 receives the ion beam 200 exiting the resolving aperture 244 and is used to manipulate the shape of the ion beam 200. The beam manipulator 260 can manipulate the shape of the ion beam 200 using an electric field generated by a plurality of correction magnets 262 extending across the beam path to tailor a precise one-dimensional ion beam current distribution for uniform implantation. In some embodiments, the correction magnets 262 can be electromagnets electrically coupled to the processor 210. The multipole unit 270 and the up / down rod 280 receive the diverging ion beam 200 exiting the beam manipulator 260 and deflect and parallelize it in two dimensions. In some embodiments, the multipole unit 270 and the up / down rod 280 can deflect the ion beam 200 using power provided by a multipole power supply 272 and a multi-rod power supply 282. By adjusting the power supplied to the multipole unit 270 and the up / down rod 280 using the processor 210, the ion beam 200 can be directed toward the processing chamber 110. The suppression assembly 290 focuses the ion beam 200 to reduce angular divergence and spatial size.

[0090] Please refer to Figure 1 and Figure 4 The ion implanter 20 may further include an incident angle detector 310 and a beam profiler 320 disposed in the process chamber 110 and electrically coupled to the processor 210. The incident angle detector 310 may be located behind an implantation platform 112 that supports the substrate 100 to measure the incident angle of the ion beam 200. The beam profiler 320 is located near the implantation platform 112 and is configured to measure an implantation current of the ion beam 200 near the implantation platform 112.

[0091] The processor 210 can control a power supply via an arc power supply 222 of the ion source 220, thereby controlling the power used to ionize the feed gas. The processor 210 is connected to a plurality of extraction electrodes 232 and a mass analyzer 240 of the source manipulator 230 to control a magnetic field applied to a plurality of ions, thereby selecting a plurality of ions contained in the ion beam 200. The processor 210 is electrically connected to a correction magnet 262, a multipole power supply 270, and a multi-rod power supply 282 to control the divergence and incident angle of the ion beam 200 at the implantation platform 112.

[0092] Generally, an initial script is created by a field technician to set multiple implantation parameters for the ion implanter 20. The multiple implantation parameters can be manually input into the implanter 20 via a communication link from an operator interface of the processor 210. The ion beam 200 generated using the initial script manually provided by the field technician can have an initial implantation profile, wherein the initial implantation profile can be obtained from measurement results provided by the ion beam detector 250, the beam profiler 320, and / or the incident angle detector 310.

[0093] The processor 210 is configured to perform respective data analyses to determine whether the initial implant profile matches an expected implant profile. If the initial implant profile matches the expected implant profile, an implant process may be performed to implant a plurality of ions into the substrate 100. Furthermore, once the initial implant profile matches the expected implant profile, the processor 210 may set the initial script as a model script for the implant. In some embodiments, the processor 210 may learn the model script.

[0094] On the other hand, if the initial implant profile does not match the expected implant profile, the processor 210 may be operable to adjust multiple implant parameters to ensure the expected dose and uniformity of the implant. In some embodiments, the processor 210 may automatically and intelligently adjust multiple implant parameters based on the initial implant profile and the expected implant profile to generate an updated script. Next, the processor 210 is configured to determine whether the multiple implant parameters of the updated script are qualified. In some embodiments, the processor 210 may control the implanter 20 to generate the ion beam 200 using the updated script, and determine whether an adjusted implant profile of the ion beam generated using the updated script matches the expected implant profile. If the adjusted implant profile does not match the expected implant profile, the processor 210 requires the on-site technician to create another initial script.

[0095] On the other hand, if the adjusted implant profile matches the expected implant profile, the implant parameters of the updated script may be qualified, and an implantation process may be performed to implant a plurality of ions into the substrate 100. In some embodiments, as Figures 5A to 5D As shown, the processor 210 may store the qualified update scripts in a database 30 .

[0096] Please refer to Figure 5A The processor 210 is specifically configured to perform a plurality of operations to control a plurality of implant parameters. In some embodiments, the processor 210 is communicatively connected to the database 30 via a hard-wire connection. In other words, the processor 210 can implement physical control actions to control a plurality of operations of the ion implanter 20, thereby adjusting the ion beam 200 provided by the ion implanter 20. It should be understood that the database 30 can be any desired type of data collector having a desired type of memory and any desired software, hardware, or firmware for storing data. Although shown as a separate device, the database 30 can also be part of the processor 210.

[0097] Please refer to Figure 5BIn some embodiments, a wireless communication is established between the processor 210 and the database 30, the processor 210 is configured to control the plurality of processing parameters of the injection, and the database 30 uses any desired wireless communication device, including hardware, software, or any combination thereof. Figure 5A and Figure 5B The processor 210 is shown configured to perform respective data analysis and / or learning on the model and update script stored in the database 30. The analysis and / or learning may be performed in response to a command or instruction generated by a field technician. Additionally or alternatively, the analysis and / or learning may be performed automatically and / or autonomously without any input from a field technician to initiate the learning analysis. That is, Figure 5A and Figure 5B A processor 210 is shown that governs the adjustment of the ion beam 200 in the ion implanter 20 .

[0098] Please refer to Figure 5C In some embodiments, the database 30 is a virtual database, and the controller 150 and the processor 210 are connected to the database 30 via a network 32. Therefore, information can be transferred and exchanged between the main controller 150 and the processor 210 via the network 32.

[0099] Please refer to Figure 5D In some embodiments, the controller 150 is communicatively connected to the processor 210 and the database 30 using a hard-wired communication scheme. The processor 210 can access the database 30 via the controller 150. Figure 5C and Figure 5D The controller 150 shown may be configured to perform respective data analysis and / or learning on the model and update scripts stored in the database 30, and the processor 210 may execute commands to control processing parameters in response to commands sent from the controller 150 via a hardwired connection or a wireless connection. Figure 5C and Figure 5D The controller 150 shown governs the tuning of the ion beam 200 in the ion implanter 20 .

[0100] In some embodiments, the model script stored in the database 30 is manually created and uploaded to the database 30 by a field technician. In some embodiments, the update script can be automatically generated by the processor 210 using the existing model script. In other words, through learning, training, and evaluation of the neural network, the processor 210 can automatically and intelligently generate the update script. After the generation is completed, the corresponding script is automatically established in the database 30. In some embodiments, the model and update script may include multiple parameters for controlling the implanter 20 to generate the ion beam 200, and the ion beam 200 has a specific ion beam current, a specific spot size, and / or a specific ion dose.

[0101] Figure 6 4 is a flow chart illustrating an operating method 400 of an ion implanter according to some embodiments of the present disclosure. The operating method 400 can be considered as an ion beam adjustment method of the ion implanter, and includes a step S402 of obtaining an initial implant profile of the ion beam generated by using an initial script; a step S404 of determining whether the initial implant profile matches an expected implant profile; a step S406 of adjusting one or more implant parameters based on the initial implant profile and the expected implant profile if the initial implant profile does not match the expected implant profile; a step S408 of determining whether an adjusted initial implant profile of the ion beam generated by using the updated script matches an expected implant profile; a step S410 of executing a learning procedure if the updated script matches the expected implant profile; a step S412 of executing a learning procedure; and a step S414 of executing an implantation process.

[0102] In some embodiments, the initial script having a plurality of implantation parameters is generated by a field technician and input into the implanter 20. In some embodiments, after determining step S404, if the initial implantation profile matches the expected implantation profile, the implanter 20 performs the implantation process to implant a plurality of ions into a substrate. Parameters that may be used for determination include parameters representing an ion beam current, an incident angle, and / or a spot size of the ion beam.

[0103] In summary, due to the architecture of the substrate processing apparatus, the ion beam generated by the implanter can be automatically adjusted based on the initial implant profile and multiple model scripts, and additional scripts can be automatically created to improve implant accuracy.

[0104] One embodiment of the present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes an ion implanter and a processor associated with the ion implanter. The ion implanter is configured to implant an ion beam into a substrate. The processor is configured to monitor an initial profile of the ion beam and automatically adjust the ion implanter to provide the ion beam with a desired implant profile based on the initial implant profile and a desired implant profile.

[0105] Another embodiment of the present disclosure provides a method for adjusting an ion beam in an ion implanter. The method includes obtaining an initial implant profile of the ion beam generated using an initial script; determining whether the initial implant profile matches an expected implant profile; if the initial implant profile does not match the expected implant profile, automatically generating an updated script based on the initial implant profile and the expected implant profile; determining whether an adjusted implant profile of the ion beam generated using the updated script matches the expected implant profile; and if the updated script matches the expected implant profile, performing an ion implantation process to implant ions into a substrate.

[0106] Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and replacements can be made without departing from the spirit and scope of the present disclosure as defined in the claims. For example, many of the above processes can be implemented in different ways, and many of the above processes can be replaced by other processes or combinations thereof.

[0107] Furthermore, the scope of the present invention is not limited to the specific embodiments of the processes, machines, manufacture, compositions of matter, means, methods, and steps described in the specification. Those skilled in the art will appreciate from the disclosure herein that existing or future developed processes, machines, manufacture, compositions of matter, means, methods, or steps that function the same as or achieve substantially the same results as the corresponding embodiments described herein may be used in accordance with the present disclosure. Accordingly, such processes, machines, manufacture, compositions of matter, means, methods, or steps are intended to be encompassed by the claims of the present invention.

Claims

1. A substrate processing device, comprising: an ion implanter that implants a plurality of ions into a substrate using an ion beam; as well as a processor associated with the ion implanter and configured to monitor an initial implant profile of the ion beam and automatically adjust the ion implanter to provide the ion beam having a desired implant profile based on the initial implant profile and a desired implant profile; The ion implanter comprises: an ion source powered by the processor and configured to ionize a gas; a source manipulator extracting a plurality of ions within the ion source to form the ion beam; a mass analyzer providing a magnetic field to select a plurality of the ions for implantation; a beam manipulator receiving the ion beam leaving the mass analyzer and for manipulating a shape of the ion beam via a magnetic field; and a multipole unit and upper / lower rods for directing a desired plurality of said ions toward the substrate using electrical force; wherein the processor adjusts the ion implanter to generate the ion beam by adjusting a potential applied to the ion source, the multipole unit, and the up / down rods, and at least one of the magnetic fields of the mass analyzer and the beam manipulator; The processor obtains the initial implantation profile based on a plurality of characteristics measured by an ion beam detector, a beam analyzer, and an incident angle detector of the ion implanter. 2 . The substrate processing apparatus of claim 1 , wherein a plurality of implantation parameters are manually generated, wherein the plurality of implantation parameters generate the ion beam having the initial implantation profile. 3 . The substrate processing apparatus of claim 1 , wherein the processor is further configured to create a model script corresponding to the expected implant profile. 4 . The substrate processing apparatus as claimed in claim 3 , further comprising a database associated with the processor and storing the model script.

5. The substrate processing apparatus of claim 4, wherein the processor is associated with the ion implanter via a hardwired connection or a wireless coupling. 6 . The substrate processing apparatus of claim 1 , wherein the processor is further configured to determine whether a match exists between the expected implant profile and at least one model script, and to adjust the ion implanter based on whether the model script matches the expected implant profile. 7 . The substrate processing apparatus as claimed in claim 1 , wherein the mass analyzer further comprises a desorption hole to filter out unnecessary substances.

8. The substrate processing apparatus of claim 7, wherein the initial implant profile and the expected implant profile comprise at least one of: an ion beam current exiting the resolving aperture, an implant current, and an incident angle of the ion beam approaching an implantation platform supporting a substrate. 9 . The substrate processing apparatus as claimed in claim 8 , wherein the ion beam current is detected by the ion beam detector, the injection current is tracked by the beam profiler, and the incident angle of the ion beam is scanned by the incident angle detector.

10. A method for adjusting an ion implanter, comprising: obtaining an initial implant profile of an ion beam generated using an initial script; determining whether the initial implant profile matches an expected implant profile; If the initial injection profile does not match an expected injection profile, automatically generating an update script based on the initial injection profile and the expected injection profile; determining whether an adjusted implant profile of the ion beam generated using the updated script matches the expected implant profile; and If the updated script matches the expected implantation profile, performing an ion implantation process to implant ions into a substrate; The ion implanter comprises: an ion source powered by the processor and configured to ionize a gas; a source manipulator extracting a plurality of ions within the ion source to form the ion beam; a mass analyzer providing a magnetic field to select a plurality of the ions for implantation; a beam manipulator receiving the ion beam leaving the mass analyzer and for manipulating a shape of the ion beam via a magnetic field; and a multipole unit and upper / lower rods for directing a desired plurality of said ions toward the substrate using electrical force; The processor adjusts the ion implanter to generate the ion beam by adjusting a potential applied to the ion source, the multipole unit and the up / down rods and at least one of the magnetic fields of the mass analyzer and the beam manipulator. 11 . The method for adjusting an ion implanter according to claim 10 , further comprising establishing a model script corresponding to the expected implant profile. 12 . The method for adjusting an ion implanter as claimed in claim 11 , wherein the initial script for generating the ion beam having the initial implant profile is manually generated. 13 . The method of claim 11 , wherein the ion beam having the desired implant profile is provided by executing an initialization script.

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