Substrate cleaning method and substrate cleaning apparatus

Abstract

The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. A cleaning process by relatively sliding a brush against a lower surface of a substrate is rapidly completed. A lower surface of a substrate having a film formed on an upper surface is held by a substrate holding section, and a cleaning process is performed by pressing a first brush and a second brush against the lower surface of the substrate and relatively sliding them against the lower surface of the substrate in the same sliding direction as each other.

Description

Technical Field

[0001] This disclosure relates to a substrate cleaning method and a substrate cleaning apparatus. Background Technology

[0002] In the manufacturing process of semiconductor devices, various processes are performed on the semiconductor wafer (hereinafter referred to as wafer), which serves as a substrate. One such process involves cleaning the wafer by sliding a brush against the back side. Patent Document 1 shows an apparatus for performing this cleaning process.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-177541 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for quickly completing a cleaning process by sliding a brush relative to the lower surface of a substrate.

[0008] Solution for solving the problem

[0009] The substrate cleaning method disclosed herein includes the following steps:

[0010] The substrate holding section holds the lower surface of a substrate on which a film is formed on its upper surface; and

[0011] In the cleaning process, the first and second brushes are pressed onto the lower surface of the substrate and slid relative to the lower surface of the substrate in the same sliding direction to perform cleaning.

[0012] The effects of the invention

[0013] According to this disclosure, a cleaning process can be quickly completed by sliding a brush relative to the lower surface of the substrate. Attached Figure Description

[0014] Figure 1 This is a top view of the cleaning apparatus for processing according to the first embodiment of this disclosure.

[0015] Figure 2 This is a longitudinal sectional side view of the cleaning device.

[0016] Figure 3 This is a top view showing the processing of the cleaning device.

[0017] Figure 4 This is a top view showing the processing of the cleaning device.

[0018] Figure 5 This is a top view showing the processing of the cleaning device.

[0019] Figure 6 This is a side view of the cleaning apparatus used in the second embodiment.

[0020] Figure 7 This is a top view showing the processing of the cleaning device.

[0021] Figure 8 This is a top view showing the processing of the cleaning device.

[0022] Figure 9 This is a top view showing the processing of the cleaning device.

[0023] Figure 10 This is a schematic diagram of the brush of the cleaning device.

[0024] Figure 11 This is a top view of the cleaning apparatus used in the third embodiment.

[0025] Figure 12 This is a top view of the cleaning apparatus for processing a modified example of the third embodiment.

[0026] Figure 13 This is a top view of the cleaning apparatus for processing a modified example of the third embodiment.

[0027] Figure 14 This is a top view of the cleaning apparatus used in the fourth embodiment.

[0028] Figure 15 This is a top view of the cleaning apparatus for processing a modified example of the fourth embodiment.

[0029] Figure 16 This is a side view of the cleaning apparatus used in the fifth embodiment.

[0030] Figure 17 This is a perspective view of the brush installed in the cleaning device. Detailed Implementation

[0031] (First Embodiment)

[0032] Reference Figure 1 Top view and Figure 2The longitudinal sectional side view illustrates the cleaning apparatus 1 of the first embodiment of the substrate cleaning method of this disclosure. In the cleaning apparatus 1, which is a substrate cleaning apparatus, two brushes are simultaneously pressed and slid relative to each other on the back side (lower surface) of a wafer W, which is a circular substrate on which a resist film is formed. Thus, different positions on the lower surface of the wafer W are processed simultaneously. Furthermore, the wafer W, which has been cleaned on the back side in this way, is transported to an exposure machine, and the resist film is exposed according to a predetermined pattern. During this exposure process, if foreign matter is attached to the back side of the wafer W, the wafer W is placed in a manner that lifts it from the stage of the exposure machine, causing the distance between the optical system of the exposure machine and the wafer W to deviate from the design value and become defocused. However, by using the cleaning apparatus 1, this situation is prevented.

[0033] The cleaning apparatus 1 includes a substrate 11, a rotary chuck 12, a cup 3, and a cleaning processing unit 4. The substrate 11 is rectangular in shape when viewed from above. A conveying mechanism (not shown) located outside the cleaning apparatus 1 transports a wafer W to the cleaning apparatus 1 from one end along its length. This end will be described as the front side. Furthermore, in the following description, left and right refer to left and right when viewed from the rear. The substrate 11 has a square recess 13 with its long side in the front-rear direction, and this recess 13 forms a processing area for the wafer W. This front-rear direction is the direction in which the center of the rotary chuck 12 (which is described later) and the axis of rotation (central axis R1) that rotates the brush that cleans the wafer W are aligned.

[0034] A rotary chuck 12 is provided on the front side of the processing area within the aforementioned recess 13. The rotary chuck 12 is a circular stage that holds the center of the lower surface of the wafer W horizontally. The lower side of the rotary chuck 12 is connected to a rotation mechanism 15 via a shaft 14. The rotation mechanism 15 rotates the rotary chuck 12 circumferentially by rotating the wafer W held in the rotary chuck 12 around a vertical axis, specifically, for example, clockwise when viewed from above (from the top surface). Three vertically spaced ( ) swivels are arranged on the side of the rotary chuck 12 along its rotation direction. Figure 2 (Only two are shown in the image) Support pins 16. Support pins 16 are raised and lowered by lifting mechanism 17, which enables the transfer of wafer W between the aforementioned transport mechanism, rotary chuck 12 and non-rotating chuck 35 described later.

[0035] A cylindrical portion extending upward from the bottom of the base 11 is provided to surround the aforementioned rotary chuck 12, rotary mechanism 15, support pin 16, and lifting mechanism 17, thus forming a blower 18. The upper end surface of the blower 18 is an inclined surface that slopes inward. An outlet 19 for ejecting, for example, air is provided at intervals along the circumferential direction on this inclined surface. When the back side of the wafer W is held in the rotary chuck 12, the upper end of the blower 18 approaches the back side of the wafer W, and air is ejected through the outlet 19, thereby preventing cleaning fluid from adhering to the center of the back side of the wafer W.

[0036] A drain port 22 is provided at the bottom of the recess 13 of the substrate 11. Additionally, an upright vent pipe 23 is provided closer to the blower 18 than the drain port 22 to vent air from the recess 13. Air is vented through this vent pipe 23 during the wafer W processing. A flange 24 extends outward from the lower part of the blower 18 above the vent pipe 23. The outer end of the flange 24 bends downward outside the vent pipe 23 to prevent waste liquid from flowing into the vent pipe 23.

[0037] The cup 3 is configured as a cylindrical body that surrounds the blower 18 and protrudes inward at its upper end. The cup 3 surrounds the periphery of the wafer W during processing, preventing the spillage of waste liquid. Furthermore, when the wafer W is held in the rotating chuck 12 or the non-rotating chuck 35 (described later), the wafer W is held concentrically with the cup 3. Each support portion 31 extends from the left and right outer walls of the cup 3 toward the outer edge of the recess 13 and is connected to a horizontal moving mechanism 32 provided on the base 11. Using this horizontal moving mechanism 32, the cup 3 can move back and forth within the recess 13. The front and rear sides of the moving area of ​​the cup 3 are designated as the front position and the rear position, respectively. Figure 1 The cup 3 is shown in the forward position, where its center coincides with the center of the rotating chuck 12 when viewed from above. In the rear position, the center of the cup 3 is located further rearward than the blower 18.

[0038] The horizontal moving mechanism 32 is connected to the lifting mechanism 33 and can move up and down relative to the base 11 together with the cup 3. Using the lifting mechanism 33, the cup 3 can move up and down between a position above the upper surface of the non-rotating chuck 35 (the support surface of the wafer W) which is higher than the upper surface of the rotating chuck 12 (the support surface of the wafer W) and a position below the upper surface of the non-rotating chuck 35 which is lower than the upper surface of the rotating chuck 12.

[0039] Two bridge portions 34 are formed inside the cup 3, extending from left to right and back to front to back, flanking the blower 18. A non-rotating chuck 35 is provided in each bridge portion 34. The non-rotating chuck 35 is used to hold the outer region of the center back side of the wafer W, keeping the wafer W horizontal. The non-rotating chuck 35 and the aforementioned rotating chuck respectively constitute a substrate holding portion. When processing the center back side of the wafer W, the wafer W is held in the non-rotating chuck 35 and processed using a brush. When processing the peripheral back side of the wafer W, the wafer W is held in the rotating chuck 12 and processed using a brush.

[0040] A nozzle 36 is provided near the rotating chuck 12 in the area surrounded by the cup 3. As a cleaning fluid, pure water is sprayed obliquely upward and backward. By spraying the cleaning fluid in this direction, when the wafer W is held in the rear position by the non-rotating chuck 35, the cleaning fluid is supplied to the center of the lower surface of the wafer W, and when the wafer W is held in the front position by the rotating chuck 12, the cleaning fluid is supplied to the periphery of the lower surface of the wafer W. The brush 51, described later, slides in the area where the cleaning fluid is supplied.

[0041] Next, the cleaning processing unit 4 will be described. This cleaning processing unit 4, together with the aforementioned rotary chuck 12, constitutes a sliding mechanism for cleaning by sliding the brush relative to the wafer W. The cleaning processing unit 4 includes a horizontal, circular stage 41 disposed within the recess 13. The stage 41 includes a stage body 42 comprising a lifting mechanism and rotating mechanisms 43 and 44. The circumferentially adjacent portions of the upper part of the stage 41 are respectively configured as rotating mechanisms 43 and 44, which are fan-shaped when viewed from above. Furthermore, the rotating mechanisms 43 and 44 can be independently raised and lowered freely using the stage body 42.

[0042] The aforementioned stage 41 is configured to rotate freely about its central axis R1. Therefore, the stage 41 rotates about its longitudinal axis, specifically its vertical axis. This central axis R1 is located behind the blower 18 and near the periphery of the cup 3 at its front position. Furthermore, the orientation of the central axis R1 and the center of the rotating chuck 12 is consistent with the forward and backward movement direction of the cup 3.

[0043] Furthermore, as described above, the stage 41 rotates, thus displacing the positions of the rotating mechanisms 43 and 44. The rotating mechanism on the right, when both 43 and 44 are located at the front, is denoted by reference numeral 43, and the rotating mechanism on the left is denoted by reference numeral 44. Above these rotating mechanisms 43 and 44, horizontal circular brushes 51 are respectively provided. These two brushes 51 are constructed identically, for example, from elastic materials such as sponge or resin, and their upper surfaces serve as sliding surfaces that press against the lower surface of the wafer W and slide. The lower part of each brush 51 is connected to the rotating mechanisms 43 and 44 respectively via shafts 52, and each brush 51 rotates around its central axis using the rotating mechanisms 43 and 44. The central axis of the brush 51 extends longitudinally, more specifically, vertically. By configuring the cleaning processing unit 4 in this way, each brush 51 can rotate about the central axis R1 of the stage 41. That is, it can move in a revolving manner about the central axis R1. Furthermore, brush 51 is configured to rotate by means of rotating mechanisms 43 and 44. In this embodiment, the rotation of brushes 51A and 51B is counterclockwise when viewed from above.

[0044] In the first embodiment, the two brushes 51 described above are the first brush and the second brush. Further explanation of the brush 51 configuration reveals that, when viewed from above, the two brushes 51 are arranged close to each other along the circumference of the stage 41, and are respectively positioned on the periphery of the stage 41 with the center of each brush 51 located at an equidistant distance from the central axis R1. Furthermore, regarding the brushes 51, the brush connected to the rotation mechanism 43 is sometimes designated as reference numeral 51A, and the brush connected to the rotation mechanism 44 is designated as reference numeral 51B, to distinguish them from each other.

[0045] Furthermore, as described above, the cup 3 moves between a front position and a rear position. A standby section 25 is provided at a position further rear of the cup 3 than in the front position and to the left of the left and right center of the cup 3. The standby section 25 is positioned below the lower end of the cup so as not to interfere with the moving cup 3. The standby section 25 has two recesses with lower side openings arranged in a front-to-back pattern to accommodate two brushes 51, respectively. These recesses are configured as standby areas 26 for activating brushes 51A and 51B. Therefore, the standby section 25 is configured to supply cleaning fluid to the brushes 51A and 51B, which are waiting in the standby areas 26, from above, and perform cleaning.

[0046] As described above, brush 51 is a structure capable of revolution (rotation about the central axis R1 of stage 41) and lifting. Using this revolution and lifting, brush 51 moves between the position where it is pressed against the lower surface of wafer W for cleaning and the standby area 26. Furthermore, regarding brush 51 and brush 53 (described later), when located on the lower surface side of wafer W, the height at which it is separated from wafer W and not processed is sometimes recorded as the non-processing position, and the height at which it is pressed against wafer W for processing is sometimes recorded as the processing position.

[0047] Further explanation of the standby section 25: The left end L1 of the standby area 26 (i.e., the left end of the brush 51 in the standby state of the standby section 25) is located near the center of the cup 3 relative to the left end L2 of the cup 3. In other words, the left end of the standby area 26 does not protrude to the left relative to the left end of the cup 3. Furthermore, since the standby section 25 is located to the left of the center of the cup 3, the right end of the standby area 26 also does not protrude to the right relative to the right end of the cup. This arrangement suppresses the increase in the width of the cleaning device 1 in the left and right directions. Furthermore, assuming that the left end L1 of the standby area 26 is aligned with the left end L2 of the cup 3, the increase in the width of the device in the left and right directions caused by the arrangement of the standby section 25 can also be suppressed.

[0048] The cleaning apparatus 1 is equipped with a control unit 10, which is composed of a computer and has a program. This program is programmed with steps to control the operation of each part of the cleaning apparatus 1 by outputting control signals to those parts, thereby enabling the performance of a series of processing actions on the wafer W, as described later. Specifically, it controls the rotation of the rotary chuck 12 implemented by the rotary mechanism 15, the movement of the cup 3 implemented by the horizontal movement mechanism 32, the lifting and lowering of the support pin 16 implemented by the lifting mechanism 17, the operation of each part constituting the cleaning processing unit 4, the ejection of air from the blower 18, and the ejection of cleaning fluid from the nozzle 36. Specifically, the operation of each part of the cleaning processing unit 4 includes, for example, the rotation, revolution, and lifting and lowering of the brush 51. The program is stored in the control unit 10, for example, on a storage medium such as a hard disk, optical disc, DVD, or memory card.

[0049] Next, refer to the top view. Figure 3 This describes the processing of wafer W using cleaning apparatus 1. Furthermore, in this… Figure 3In the subsequent top views describing the processing of the apparatus, the parts of the rotating chuck 12, the non-rotating chuck 35, and the brush that contact the back side of the wafer W are indicated by solid lines, while the parts that separate from the back side of the wafer W are indicated by dashed lines or omitted. Furthermore, to facilitate understanding of the positional relationships of each part, imaginary lines L3 passing through the center of the rotating chuck 12 and extending laterally, L4 passing through the central axis R1 of the stage 41 and extending laterally, and L5 passing through the center of the rotating chuck 12 and the central axis R1 and extending forward and backward are shown by dashed lines.

[0050] With the cup 3 in the forward and downward position and each brush 51 in the standby area 26, as described above, the wafer W with a resist film formed on its surface is transported to the cleaning device 1 by the transport mechanism, and the support pin 16 rises to support the wafer W. Then, after the cup 3 moves to the upper position, the support pin 16 descends, and the wafer W is transferred to the non-rotating chuck 35 and held there. On the other hand, the brushes 51 descend from the standby area 26, revolve, and pass through the lower end of the cup 3 to move downwards towards the wafer W, with brushes 51A and 51B located to the right and left of the imaginary line L5, respectively. Figure 3 (a)

[0051] Next, as the cup 3 moves to the rear position, cleaning fluid is sprayed from the nozzle 36 and supplied to the center of the wafer W. Then, the brush 51 rotates (self-rotates) and rises from each non-processing position to the processing position, pressing against the center of the lower surface of the wafer W. Furthermore, by utilizing the rotation of the stage 41, it alternately and repeatedly performs clockwise and counterclockwise revolutions, thereby oscillating left and right without interfering with the non-rotating chuck 35, and sliding relative to the lower surface of the wafer W. Figure 3 (b) Therefore, each brush 51 moves in the same sliding direction while being positioned at different locations along the sliding direction that is the revolution direction. That is, when two brushes 51 slide on the wafer W, the other brush 51 moves in a manner that follows one brush 51 from behind in the sliding direction. Furthermore, if two brushes 51 are set as a group, the group oscillates as described above with respect to the imaginary line L5, moving equally in the left and right directions.

[0052] During the oscillation of brush 51, cup 3 moves from the rear position to the front position, and when the entire central part is cleaned by the sliding of brush 51 ( Figure 3 (c) The movement of cup 3, the spraying of cleaning fluid from nozzle 36, and the stopping of the rotation and revolution of brush 51.

[0053] Each brush 51 descends and moves towards the non-processing position, the cup 3 moves downward, and the center of the lower surface of the wafer W is held in the rotating chuck 12, while the non-rotating chuck 35 releases its hold on the wafer W. Then, air is ejected from the blower 18, cleaning fluid is ejected from the nozzle 36, and the wafer W is rotated using the rotating chuck 12. Furthermore, as described above, the wafer W moves together with the cup 3, so the cleaning fluid is ejected from the periphery of the wafer W at this time. When each brush 51 revolves and, for example, is on the right side relative to the imaginary line L5, each brush 51 rises towards the processing position and rotates (self-rotates), pressing against the periphery of the lower surface of the wafer W to clean the periphery. In other words, the direction of rotation of the wafer W is set as the sliding direction, and the brushes 51 slide in the same sliding direction to perform processing. Furthermore, at this time, each brush 51 is positioned at a different location in the radial direction of the wafer W.

[0054] After the brush 51 is pressed down, the wafer W rotates more than one revolution, completing the overall cleaning of the periphery of the wafer W. Corresponding to the cleaning performed when the wafer W is held in the non-rotating chuck 35, when the overall cleaning of the lower surface of the wafer W is completed, the rotation of the wafer W and the rotation of the brush 51 stop respectively. The brush 51 separates from the wafer W by descending, rotating, and rising, and returns to the standby area 26 under the cup 3, and the spraying of cleaning fluid from the nozzle 36 also stops. Then, by raising and lowering the support pin 16, the wafer W is transferred to the transport mechanism and sent out of the cleaning device 1.

[0055] According to the cleaning apparatus 1, when cleaning the center portion of the lower surface of the wafer W, as described above, the brushes 51A and 51B, which are simultaneously oscillating and pressing, are moved in the same sliding direction. Therefore, even if the rotation amount of the stage 41 used to rotate the brushes 51 is relatively small, the brushes 51A and 51B can reach the desired positions on the right and left sides of the center portion of the wafer W, respectively, and perform cleaning. In this way, by suppressing the rotation amount of the stage 41 required for cleaning, the cleaning of the center portion of the lower surface of the wafer W can be completed quickly. In addition, when processing the peripheral portion of the wafer W, each brush 51 can also be used to clean simultaneously, thereby completing the cleaning quickly. As a result, the cleaning apparatus 1 can achieve a high productivity. Furthermore, when cleaning the peripheral portion of the lower surface of the wafer W, each brush 51 is arranged at a different position in the radial direction of the rotating wafer W. Therefore, a wider range of the peripheral portion of the wafer W can be cleaned simultaneously, thereby achieving a higher productivity more reliably.

[0056] In the above processing example, when cleaning the periphery of the lower surface of wafer W, wafer W is rotated clockwise, and each brush 51 is rotated counterclockwise. That is, wafer W and brush 51 rotate in opposite directions, thereby applying a stronger load to the back surface of wafer W and achieving a better cleaning effect. However, the rotation direction is not limited to this relationship, and each brush 51 can rotate (spin) in any direction. For example, in Figure 4 In the example shown, with Figure 3 The example shown is different, causing brush 51B to rotate clockwise. Alternatively, brush 51A can be rotated (spinned) in any direction.

[0057] Furthermore, in the above processing example, when cleaning the periphery of wafer W, brush 51 was not made to revolve, but its position was fixed relative to the rotating wafer W. However, it is not limited to fixing the position in this way. Figure 5 In the example shown, starting from the state where the imaginary line L5 is between brushes 51A and 51B, each brush is rotated counterclockwise, causing the area on the periphery of the rotating wafer W that is slid by brush 51 to move from a position near the center of the wafer W towards the periphery. This action can also be used to clean the periphery of the wafer W. Furthermore, by moving the brushes 51 in this way, different radial positions of the wafer W can be cleaned independently using the brushes 51, thus enabling rapid processing of the periphery.

[0058] (Second Implementation)

[0059] use Figure 6 The side view shown illustrates the cleaning apparatus 1A according to the second embodiment. The cleaning apparatus 1A includes a cleaning processing unit 6 instead of a cleaning processing unit 4. Hereinafter, the cleaning processing unit 6 will be described focusing on the differences between it and the cleaning processing unit 4. As described above, the stage 41 rotates about the central axis R1, but the rotating mechanisms 43 and 44 are not provided on the stage 41; instead, a support arm 61 extends horizontally from the stage 41. Furthermore, a circular stage 63 is horizontally provided above the rotating mechanism 62 located at the top end of the support arm 61. Using the rotating mechanism 62, the stage 63 can rotate freely about the vertical central axis R2. In this embodiment, the rotation direction of the stage 63 is clockwise when viewed from above.

[0060] Above the stage 63 are rotating mechanisms 43A and 44A, respectively, which are equivalent to the rotating mechanisms 43 and 44 described above. These rotating mechanisms 43A and 44A are connected to the brushes via shafts 52, and can rotate each brush in the same way as in the first embodiment. In addition, the stage 63 can independently raise and lower the rotating mechanisms 43A and 44A, so that each brush can move between the processing position and the non-processing position.

[0061] The brush connected to the rotating mechanism 43A is also a brush 51, as in the first embodiment. A brush 53 is connected to the rotating mechanism 44A instead of brush 51. In all embodiments following this second embodiment, brush 51 is the first brush, and brush 53 is the second brush. Brush 53 is configured as a circle of the same size as brush 51 when viewed from above, and rotates (rotates) around its center when viewed from above using the rotating mechanism 44A. However, comparing the elasticity of brushes 51 and 53, the elasticity of brush 53 is lower than that of brush 51. Brush 53 slides relative to the wafer W via its upper sliding surface, thereby grinding the lower surface of the wafer W and removing foreign matter adhering to the wafer W. Furthermore, for example, when the sliding surface of brush 51 relative to the wafer W is made of resin, the sliding surface of brush 53 relative to the wafer W has finer unevenness than the sliding surface of brush 51.

[0062] In this second embodiment, the movement of brushes 51 and 53 is controlled by allowing brush 51 to slide in the area on the lower surface of wafer W where brush 53 has already slid. The sliding of brush 51 removes shavings generated on the lower surface of wafer W due to the sliding of brush 53. Furthermore, in this specification, the polishing process is included within the cleaning process; however, for ease of explanation, the process performed by pressing with brush 53 is sometimes referred to as polishing, and the process performed by pressing with brush 51 is sometimes referred to as cleaning, to distinguish between them. Additionally, in this second embodiment, brushes 51 and 53 rotate together in a counter-clockwise direction (rotation).

[0063] In this embodiment, the rotation of the stage 41 about the central axis R1 is performed to move the brushes 51 and 53 between the standby area 26 and the lower surface of the wafer W. The revolution of the brushes 51 and 53 during wafer W processing is achieved by the rotation of the stage 63 about the central axis R2. Therefore, the central axis R2 becomes the axis of revolution (rotation axis) of the brushes 51 and 53. In top view, the centers of each brush 51 and 53 are located on the diameter of the stage 63 and at equidistant positions from the central axis R2. Furthermore, in top view, the brushes 51 and 53 are arranged close to each other, and their diameters are approximately the same size as the radius of the stage 63. Furthermore, the diameter of the circle formed by the rotating orbits of brushes 51 and 53 (revolutionary orbits centered on the central axis R2) is smaller than the radius of wafer W. During the processing of the periphery of wafer W, as described later, brushes 51 and 53 rotate (revolve) in a manner in which the rotating orbits overlap with the periphery of wafer W.

[0064] Regarding the operation of cleaning device 1A, using Figures 7-9 The explanation will focus on the differences in operation between the cleaning device 1 and the cleaning device 2. Figures 7-9 In, with Figure 3 Similarly, imaginary lines L3 to L5 are shown, but for those in... Figure 3In order to show the position of the brush's revolution axis during the processing, imaginary lines L4 and L5, which are drawn through the central axis R1, are instead drawn through the central axis R2.

[0065] When feeding wafer W into cleaning device 1A, wafer W is held in place by non-rotating chuck 35. Then, using the rotation of stage 41, brushes 51 and 53 move from standby area 26 towards the underside of wafer W. The alignment of the central axis R2 (the axis of revolution of the brushes) of stage 63 with the center of rotating chuck 12 is consistent with the forward and backward movement direction of cup 3. Figure 7 (a) Next, the cup 3 moves to a rearward position, and with the brush 51 in the non-processing position, the brush 53 rotates (spins) and rises to the processing position, pressing against the lower surface of the wafer W. Meanwhile, cleaning fluid is ejected from the nozzle 36 and supplied to the center of the lower surface of the wafer W.

[0066] Using the rotation of the stage 63, the brush 53 revolves and performs grinding around the center of the lower surface of the wafer W along the circumferential direction. Figure 7 (b)). After brush 53 is pressed down, stage 63 rotates one revolution. When the entire center of wafer W is ground, the rotation of brush 53 stops and it descends to the non-processing position. On the other hand, brush 51 rotates (spins) and rises to the processing position, pressing down on the lower surface of wafer W. The rotation of stage 63 continues, thereby cleaning around the center of the lower surface of wafer W in the circumferential direction. Figure 7 (c) After the brush 51 is pressed down, the stage 63 rotates one revolution. When the entire center of the wafer W is cleaned, the rotation of the brush 51 stops and it descends to the non-processing position. In addition, the spraying of cleaning fluid from the nozzle 36 temporarily stops.

[0067] Then, cup 3 moves forward and then downward, replacing the non-rotating chuck 35, while the rotating chuck 12 holds the wafer W. Figure 8 (a) Next, the stage 63 rotates, and when viewed from above, the centers of brushes 51 and 53 are aligned with the imaginary line L5, and brush 53 is positioned closer to the center of the wafer W than brush 51. Meanwhile, the wafer W rotates, and cleaning fluid is once again ejected from the nozzle 36, supplying the cleaning fluid to the periphery of the wafer W.

[0068] Then, with brush 51 in the non-processing position, brush 53 rotates (spins) and rises to the processing position. While pressing against the lower surface of wafer W, stage 63 rotates, and brush 53 moves toward the periphery of wafer W. Figure 8(b)). Using the rotation of wafer W, brush 53 slides along the circumference of wafer W. Using the rotation of stage 63, brush 53 revolves, thus moving the sliding position toward the circumferential edge of wafer W. Furthermore, the processing of wafer W using only brush 53 of brushes 51 and 53 is equivalent to the first sliding process. Furthermore, the simultaneous rotation of brushes 51 and 53 using the rotation of stage 63 is equivalent to a rotation process. Moreover, after brush 53 moves to the processing position and before stage 63 has completed half a rotation, brush 51 rotates (self-rotates) and moves toward the processing position. At the moment when brush 53 begins to descend toward the non-processing position and stage 63 has completed half a rotation, brushes 51 and 53 press together on wafer W, and in a state where the centers of brushes 51 and 53 are located on imaginary line L5 when viewed from above. Figure 8 (c) That is, the brush 51 applies pressure to the wafer W while the pressure of the brush 53 remains on the wafer W. Furthermore, the brush 53 moves to such a position that it reaches the periphery of the wafer W, completing the overall grinding of the periphery of the wafer W.

[0069] Then, the stage 63 rotates, causing the brush 51 to move toward the periphery of the wafer W. On the other hand, the brush 53 separates from the wafer W and descends toward a non-processing position. Figure 9 (a)). Then, after brush 51 is in the processing position, stage 63 rotates half a circle, and when viewed from above, the centers of brushes 51 and 53 are aligned with the imaginary line L5, thereby completing the overall cleaning of the periphery of wafer W using brush 51. Figure 9 (b)). Furthermore, the processing of wafer W using only brush 51 of brushes 51 and 53 is equivalent to the second sliding process. The wafer W is sent out of the cleaning device 1A by the descent of brush 51 to the non-processing position, the cessation of the rotation of brush 51, the cessation of the spraying of cleaning fluid from nozzle 36, and the cessation of the rotation of wafer W.

[0070] Thus, in the cleaning apparatus 1A, during the processing of the peripheral portion of the wafer W, brushes 51 and 53 are positioned at different locations relative to the sliding direction, i.e., the revolution direction, of the wafer W. Furthermore, a time is provided in which these brushes 51 and 53 simultaneously press against the wafer W and perform grinding and cleaning in parallel, thereby enabling rapid grinding and cleaning processes. Additionally, during the processing of the center portion of the wafer W, it is described that after brush 53 moves to a non-processing position, brush 51 moves to a processing position. However, similar to the peripheral processing, brushes 51 and 53 can also simultaneously press against the wafer W when switching between brushes 51 and 53.

[0071] Furthermore, as described above, during the processing of the periphery of wafer W, brushes 51 and 53 are pressed simultaneously. However, it is assumed that after brush 53 is separated from wafer W, brush 51 is pressed intermittently. In this case, from the state where a relatively large pressing force was applied using brush 53, the pressing force disappears due to the separation of brush 53, and the orientation of wafer W changes. Due to the change in its orientation and the centrifugal force of the rotating wafer W, the periphery of wafer W may vibrate up and down. If such vibration occurs, it may cause damage to the resist film formed on the surface of wafer W, affecting the yield of semiconductor devices. By pressing brushes 51 and 53 simultaneously, the occurrence of such adverse conditions can be suppressed.

[0072] also, Figure 10 It means as Figure 8 (c) shows a schematic diagram of brushes 51 and 53 pressed together on wafer W. As described above, brushes 51 and 53 rotate counterclockwise, i.e., in the same direction. Due to the rotation of brush 53, cleaning fluid containing shavings generated by the grinding of brush 53 is dispersed toward brush 51. In the figure, the cleaning fluid toward brush 51 is indicated by reference numeral 71 and an arrow. On the other hand, brush 51 rotates in the same direction as brush 53, so that the cleaning fluid (indicated by reference numeral 72 and an arrow) disperses from brush 51 toward brush 53 in a relatively strong vector manner. Therefore, the vector of cleaning fluid 71 containing shavings is canceled or weakened by the vector of cleaning fluid 72. Thus, shavings are suppressed from adhering to brush 51. Therefore, the frequency of cleaning brush 51 in the standby area 26 can be reduced, and the operating efficiency of cleaning device 1A can be improved. In addition, making brushes 51 and 53 rotate together in a clockwise direction can also improve operating efficiency in this way. Alternatively, the rotational speed of brush 51 when pressed together with the wafer W can be made greater than that of brush 53 in order to make the vector of cleaning fluid 72 larger, so as to more reliably prevent chips from adhering to brush 51.

[0073] (Third Implementation)

[0074] Regarding the cleaning apparatus 1B of the third embodiment, refer to... Figure 11The description will focus on the differences between this cleaning apparatus 1B and the cleaning apparatus 1 of the first embodiment. This cleaning apparatus 1B, like the cleaning apparatus 1 of the first embodiment, includes a cleaning processing unit 4, but instead of brush 51A, it is equipped with brush 53. In the cleaning apparatus 1B, for the center portion of the lower surface of the wafer W, as described in the first embodiment, the brush is oscillated while the wafer W is held in a non-rotating chuck 35, but the processing differs in that brush 53 and brush 51 are used sequentially. Specifically, only brush 53 of brushes 51 and 53 is moved to the processing position, and this brush 53, like brush 51 of the first embodiment, rotates (rotates) and oscillates (revolves) to perform grinding. Then, only brush 51 of brushes 51 and 53 is moved to the processing position, and this brush 51 rotates (rotates) and oscillates to perform cleaning. Furthermore, in the same manner as in the first embodiment, the entire center portion of the wafer W is processed, and during the processing using each brush 51 and 53, the cup 3 is moved in the front-to-back direction. In other words, specifically, for example, during the processing using brush 53, cup 3 is moved from the rear position to the front position and then returns to the rear position. During the processing using brush 51, cup 3 is also moved from the rear position to the front position.

[0075] After processing the center of the lower surface of the wafer W, the wafer W is held by a rotating chuck 12, and the periphery of the lower surface of the wafer W is processed. Figure 11 This indicates the processing steps for the peripheral area. First, in a top view, the center of brush 53 is positioned on imaginary line L5. Then, the wafer W is rotated, causing brushes 51 and 53 to rise from the non-processing position to the processing position and rotate, pressing against the wafer W. Figure 11 (a)). Then, stage 41 rotates clockwise, brush 53 revolves toward the periphery of wafer W, and brush 51 revolves toward the periphery of wafer W in a manner that follows brush 53. Thus, when viewed from above, brush 51 moves on wafer W along the moving path of brush 53. Figure 11 (b) Thus, the polished area moves toward the periphery of the rotating wafer W, and then the polished area moves toward the periphery of the wafer W.

[0076] When brush 53 is located at the periphery of wafer W and has completed the overall grinding of the periphery of wafer W, brush 53 returns to the non-processing position and stops rotating. The revolution of brush 51, achieved by the rotation of stage 41, continues until brush 51 is located at the periphery of wafer W and has completed the overall cleaning of the periphery of wafer W. Figure 11 (c)), brush 51 returns to the non-processing position and stops rotating.

[0077] In the cleaning apparatus 1B described above, brushes 51 and 53 simultaneously press against the periphery of the lower surface of the wafer W and slide in the rotational direction of the wafer W, thereby simultaneously performing grinding and cleaning. This reduces the processing time and increases productivity. Furthermore, in the cleaning apparatus 1B, during the processing of the periphery of the wafer W, the stage 41 rotates in the aforementioned direction, causing brushes 51 and 53 to revolve upstream of the wafer W's rotational direction. This movement of brushes 51 and 53 opposite to the wafer W's rotational direction increases the friction between the brushes 51 and 53 and the wafer W, further enhancing the grinding force of brush 53 and the cleaning force of brush 51.

[0078] (First variation of the third embodiment)

[0079] exist Figure 12 The cleaning apparatus 1C of the first modification of the third embodiment is shown. A difference between the cleaning apparatus 1C and the cleaning apparatus 1B is that the positions of brushes 51 and 53 are reversed. That is, compared to the cleaning apparatus 1 of the first embodiment, brushes 53 are provided instead of brushes 51B. The treatment of the peripheral portion of the lower surface of the wafer W using the cleaning apparatus 1C is performed in roughly the same way as in the cleaning apparatus 1B, but the rotation direction of the stage 41 is different from that of the cleaning apparatus 1B, becoming counterclockwise, so that it moves towards the peripheral edge of the wafer W in the order of brushes 53 and 51. As shown in the examples of cleaning apparatuses 1B and 1C, the revolution direction of brushes 51 and 53 can also be either clockwise or counterclockwise, and the arrangement of brushes 51 and 53 can be appropriately changed according to this revolution direction.

[0080] (Second variation of the third embodiment)

[0081] exist Figure 13 The image shows a cleaning apparatus 1D of the second modification of the third embodiment. In this cleaning apparatus 1D, a stage 41 is not provided; instead, stages 45A and 45B are arranged side-by-side on the rear side of the blower 18. Stages 45A and 45B are configured to rotate freely about vertical axes R3 and R4, respectively, and each includes horizontally extending arms 46A and 46B. A lifting mechanism is provided at the top end of each arm 46A and 46B, and a rotating mechanism 43A and 44A are provided on this lifting mechanism. Brushes 51 and 53 are connected to the rotating mechanisms 43A and 43B, respectively, as described above.

[0082] Therefore, the aforementioned rotation axes R3 and R4 respectively constitute the revolution axes (rotation axes) of brushes 51 and 53. Thus, it is also possible to have an independent revolution axis for each brush 51 and 53. Regarding embodiments other than the third embodiment, multiple brushes may revolve around different revolution axes, but by having multiple brushes revolve together around a shared revolution axis, as in the first embodiment, the device structure can be simplified and manufacturing costs reduced, which is advantageous.

[0083] (Fourth implementation)

[0084] Reference Figure 14 (a) describes the cleaning apparatus 1E of the fourth embodiment. Regarding the cleaning apparatus 1E, if we were to describe the differences between it and the cleaning apparatus 1B of the third embodiment, we could list that three brushes, 51A, 51B, and 53, are provided on the periphery of the platform 41. In plan view, brushes 51A, 53, and 51B are arranged sequentially along the circumference of the platform 41, and these brushes 51A, 51B, and 53 are located on the periphery of the platform 41. Furthermore, in plan view, brush 53 is positioned close to brushes 51A and 51B, and the centers of brushes 51A, 51B, and 53 are located at a distance equidistant from the central axis R1 of the platform 41. In this fourth embodiment, the platform 41 is provided with three rotating mechanisms along the circumference, capable of rising and falling in the same manner as the aforementioned rotating mechanisms 43 or 44. Brushes 51A, 51B, and 53 are each connected to a rotating mechanism, thereby enabling independent rotation (self-rotation) and rising and falling.

[0085] Furthermore, in the cleaning apparatus 1E, similar to the cleaning apparatus 1B of the third embodiment, the cleaning brush 51 and the polishing brush 53 oscillate by switching the rotation direction of the stage 41, thereby processing the center portion of the lower surface of the wafer W. However, regarding brushes 51A and 51B, the lifting and lowering of each brush is controlled such that one corresponding to the revolution direction (rotation direction of the stage 41) is pressed against the wafer W, and brush 53, which slides on the wafer W, is in front.

[0086] To be more specific, when the wafer W is held in the non-rotating chuck 35 state, for example, as... Figure 14 As shown in (a), in top view, the center of brush 53 overlaps with the imaginary line L5. Starting from a state where each brush is in a non-processing position and rotating, brushes 53 and 51A rise and move towards the processing position. Then, stage 41 rotates counterclockwise in top view, brush 53 moves to a position offset to the left relative to the imaginary line L5, and brush 51A follows brush 53. Figure 14(b) That is, in the brush arrangement body formed by brushes 51A, 53, and 51B arranged in the direction of rotation (revolution), brush 51B is positioned lower than the other brushes and is set as an unused brush for the first cleaning process.

[0087] Then, when brush 53 moves a predetermined amount away from the imaginary line L5, the rotation direction of stage 41 is switched to clockwise when viewed from above. During this rotation switch, brush 51A descends and moves towards the non-processing position, while brush 51B rises and moves towards the processing position. Then, using the rotation of stage 41, brush 53 moves to a position offset to the right relative to the imaginary line L5, and brush 51B follows brush 53. Figure 14 (c) That is, a second cleaning process is performed as follows: in the brush arrangement described above, brush 51A is positioned lower than the other brushes, designated as an unused brush. Then, when the position of brush 53 moves away from the imaginary line L5 by a predetermined amount, the rotation direction of the stage 41 is switched to a counterclockwise direction when viewed from above. When the rotation direction is switched in this way, brush 51A moves towards the processing position, and brush 51B moves towards the non-processing position. By utilizing the rotation of the stage 41, brush 53 moves to a position offset to the left relative to the imaginary line L5. This movement and raising / lowering of brush 53 is repeated to process the center portion of the wafer W.

[0088] The cleaning apparatus 1E can also simultaneously grind and clean the center of the lower surface of the wafer W as described above, thus achieving high productivity. Furthermore, regarding the treatment of the periphery of the lower surface of the wafer W, detailed descriptions are omitted; for example, either of the two brushes 51 (51A, 51B) and brush 53 can be used, and the brushes can be slid across the wafer W for treatment as shown in the third embodiment.

[0089] (A variation of the fourth embodiment)

[0090] Regarding the cleaning apparatus 1F of the modified example of the fourth embodiment, if referring to... Figure 15 The difference between (a) and the cleaning device 1E can be illustrated by the presence of two brushes 53 (denoted as 53A and 53B) and one brush 51. Brushes 53A and 53B are respectively located at the positions where brushes 51A and 51B are located in the cleaning device 1E, while brush 51 is located at the position where brushes 53 are located in the cleaning device 1D. Therefore, the brushes are arranged on the periphery of the stage 41 in the order of brushes 53B, 51, and 53A when viewed from above.

[0091] When processing the center of the lower surface of wafer W, similar to cleaning apparatus 1E, the brushes oscillate by switching the rotation direction of stage 41. Furthermore, regarding the brushes sliding on the lower surface of wafer W, the lifting and lowering motion of each brush is controlled with brush 53 in front. Specifically, as described... Figure 15 As shown in (b), when the stage 41 rotates counterclockwise, brushes 53B and 51 are in the processing position, while brush 53A is in the non-processing position. That is, in the first cleaning process, in the brush arrangement consisting of brushes 53A, 51, and 53B arranged in the rotational direction (revolutionary direction), brush 53A is positioned lower than the other brushes and is designated as an unused brush. Then, as... Figure 15 As shown in (c), when the stage 41 rotates clockwise, brushes 53B and 51 are in the processing position, while brush 53B is in the non-processing position. That is, in the second cleaning process, brush 53B is positioned lower than the other brushes in the brush arrangement and is designated as an unused brush.

[0092] In this cleaning apparatus 1F, grinding and cleaning can be performed simultaneously, resulting in higher productivity. Furthermore, since brush 53 grinds the wafer W, it experiences greater friction on the wafer W during sliding compared to brush 51, making it more prone to degradation. However, as described above, the cleaning apparatus 1F uses both brushes 53 alternately, thus extending the lifespan of the brushes 53 and reducing their replacement frequency.

[0093] (Fifth Embodiment)

[0094] Figure 16 (a) and (b) represent the cleaning device 1G of the fifth embodiment, which becomes a replacement Figure 11 The cleaning apparatus 1B of the third embodiment described herein has a structure in which brush 55 is provided instead of brush 53. In this cleaning apparatus 1G, brushes 51 and 55 correspond to the first brush and the second brush, respectively. Brush 55 is used for both abrasion and cleaning. (See also...) Figure 17 To illustrate brush 55 using a perspective view, brush 55 includes a circular and horizontal base 56, with a shaft 52 connected from below to the center of the base 56. Brush 55 is connected to the aforementioned rotating mechanism 44 via the shaft 52, enabling it to rotate and move up and down in the circumferential direction.

[0095] A generally annular polishing section 57 is provided on the periphery of the base 56. This polishing section 57 is constructed by providing polishing members that are arc-shaped when viewed from above, spaced apart and openly spaced around the base 56. Grooves 59 for discharging cleaning fluid are formed between the polishing members. This polishing section 57 corresponds to the aforementioned polishing brush 53, and its upper end surface forms a sliding surface 57A (first sliding surface) relative to the wafer W. Furthermore, the polishing section 57 is, for example, a thin sheet, but for convenience, ... Figure 16 The middle shows more Figure 17 Thick. Additionally, a ring-shaped cleaning section 58 is provided, surrounded by the grinding section 57 and extending circumferentially along the base 56. The cleaning section 58 corresponds to the brush 51 described above, and its upper end surface forms a sliding surface 58A (second sliding surface) relative to the wafer W. Similar to the brush 51, the cleaning section 58 is elastic; when the brush 55 is not pressed against the wafer W and the cleaning section 58 is not subjected to pressure from the wafer W, the sliding surface 58A is located above the sliding surface 57A. Figure 17 The image shows the cleaning section 58 in its state without being subjected to the pressing pressure. Figure 16 In the middle, the cleaning section 58 is also shown by a dashed line when it is not subjected to the pressing pressure.

[0096] When brush 55 is pressed against wafer W, cleaning section 58 deforms due to its elasticity, thereby aligning the heights of sliding surfaces 57A and 58A. During polishing of wafer W, brush 55 is positioned at the polishing processing position (position 1) where sliding surfaces 57A and 58A are pressed together on the lower surface of wafer W. During cleaning of wafer W, brush 55 is positioned at the cleaning processing position (position 2) where only sliding surface 58A is pressed against the lower surface of wafer W.

[0097] Regarding the handling of the 1G cleaning device, use... Figure 16 The explanation will focus on the differences between the cleaning device 1B and the cleaning device 1B. First, when processing the center of the lower surface of the wafer W, the brush 55, located at the polishing processing position, rotates and oscillates to perform polishing. Figure 16 (a)). That is, instead of brush 53, polishing is performed using brush 55 located in the polishing processing position. At this time, brush 51 is located in the non-processing position. After this polishing, a configuration process is performed in which brush 51 is located in the processing position and brush 55 is lowered to the cleaning processing position. Then, the center of the lower surface of wafer W is cleaned by the oscillation of brushes 51 and 55. Figure 16(b)). In order to perform cleaning in this way, when brushes 51 and 55 are pressed against the wafer W, the upper surface of brush 51 (relative to the sliding surface of the wafer W) is lower than the sliding surface 58A when it is assumed that it is not subjected to pressure from the wafer W, and higher than the sliding surface 57A of the grinding part 57. By configuring brush 55 in such a height positional relationship, the above-mentioned grinding can be performed, and both brushes 51 and 55 can be used for cleaning, thus reducing the number of brushes provided in the device and completing the cleaning process quickly.

[0098] The processing of the center portion of wafer W has been specifically described, but when processing the peripheral portion of the lower surface of wafer W, the processing described in the cleaning apparatus 1B as using brush 53 can be performed using brush 55 positioned at the polishing processing position. Regarding the polishing processing performed using brush 53 in other embodiments, brush 55 positioned at the polishing processing position can also be used. Furthermore, while the sliding surfaces of brushes 51 and 53 relative to wafer W are circular, they can also be annular, similar to the polishing portion 57 and cleaning portion 58 of brush 55.

[0099] In the embodiments described above, the film formed on the surface of wafer W is a resist film, but regardless of the type of film formed, cleaning of the back side of wafer W is possible. Furthermore, while each embodiment describes the brush rotating as wafer W slides, it is also possible to perform cleaning (including polishing) by utilizing the rotation of wafer W and / or the revolution of the brushes to make the brushes slide relative to wafer W. Therefore, brush rotation may not be necessary. Additionally, the number of brushes is not limited to the examples described above; any number of brushes can be used for cleaning, and three or more brushes can be pressed simultaneously onto wafer W for cleaning (including polishing).

[0100] Furthermore, regarding the various embodiments of the cleaning apparatus equipped with brush 53, it is described that both the peripheral and central portions of the wafer W are polished, but this is not a limited processing example. For example, it is also possible to clean only the central portion and polish and clean only the peripheral portion. Additionally, the standby unit 25 is not limited to... Figure 1 The configuration example shown can be placed at a position that overlaps with the area where brushes 51 and 53 rotate using stage 41, or it can be placed at the rear of the device.

[0101] Furthermore, it should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above-described embodiments may also be omitted, substituted, modified, or combined in various forms without departing from the scope and spirit of the appended claims.

Claims

1. A substrate cleaning method, wherein, The substrate cleaning method includes the following steps: The substrate holding section holds the lower surface of a substrate on which a film is formed on its upper surface; and In the cleaning process, the first and second brushes are simultaneously pressed onto the lower surface of the substrate, and they are slid in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The first brush has higher elasticity than the second brush. The cleaning process includes the following steps: sliding the first brush and the second brush relative to the substrate in a manner that makes the first brush follow the second brush. The substrate cleaning method further includes the following steps: rotating a brush arrangement body, which is arranged in the rotational direction in the order of the first brush, the second brush, and the first brush, or in the rotational direction in the order of the second brush, the first brush, and the second brush, around a rotational axis extending longitudinally, in a clockwise and counterclockwise direction respectively when viewed from above. The cleaning process also includes: In the first cleaning step, during the clockwise rotation of the array, one brush constituting the array is set as an unused brush and positioned lower than the other brushes. The rotation causes the second brush and the first brush following the second brush to slide on the substrate. In the second cleaning process, during the counterclockwise rotation of the arrangement, one brush that constitutes the arrangement, different from the unused brush in the first cleaning process, is designated as an unused brush and positioned below the other brushes, so that the second brush and the first brush following the second brush slide on the substrate.

2. The substrate cleaning method according to claim 1, wherein, The cleaning process further includes the following steps: positioning the first brush and the second brush at different radial positions on the substrate, and rotating them to slide on the substrate.

3. The substrate cleaning method according to claim 1 or 2, wherein, The cleaning process further includes a rotation process, in which the first brush and the second brush rotate in the same direction when viewed from above and press against the lower surface of the substrate.

4. A substrate cleaning method, wherein, The substrate cleaning method includes the following steps: The substrate holding section holds the lower surface of a substrate on which a film is formed on its upper surface; and In the cleaning process, the first and second brushes are simultaneously pressed onto the lower surface of the substrate, and they are slid in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The substrate cleaning method also includes: In the first sliding step, only the first brush (of the first brush and the second brush) is pressed against the lower surface of the substrate and slid. In the second sliding step, only the second brush of the first and second brushes is pressed against the lower surface of the substrate and allowed to slide. The cleaning process includes the following steps: after the first sliding step and before the second sliding step, the first brush is lowered and the second brush is raised, and the second brush is pressed onto the substrate while the first brush is pressed onto the substrate.

5. The substrate cleaning method according to claim 4, wherein, The substrate cleaning method further includes a rotation step, wherein a circle overlapping the substrate held by the substrate holding portion is set as a rotation track, and the first brush and the second brush rotate together around a rotation axis extending longitudinally. The cleaning process, the first sliding process, and the second sliding process are all performed during the rotation process. The sliding direction of the first brush and the second brush in the cleaning process is the rotation direction. The first sliding process is the process in which the first brush rotates along the first arc forming the circle while being pressed against the substrate. The second sliding process is a process in which the second brush rotates along a second arc that forms the circle and is different from the first arc while it is pressed against the substrate.

6. The substrate cleaning method according to claim 4 or 5, wherein, The first brush has higher elasticity than the second brush. The cleaning process further includes a rotation process, in which the first brush and the second brush rotate in the same direction when viewed from above and press against the lower surface of the substrate.

7. The substrate cleaning method according to claim 6, wherein, The rotation process includes the following steps: making the rotation speed of the first brush greater than the rotation speed of the second brush.

8. A substrate cleaning method, wherein, The substrate cleaning method includes the following steps: The substrate holding section holds the lower surface of a substrate on which a film is formed on its upper surface; and In the cleaning process, the first and second brushes are simultaneously pressed onto the lower surface of the substrate, and they are slid in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The second brush includes a first sliding surface that slides at a first height relative to the substrate and a second sliding surface that is elastic and higher than the first height. The substrate cleaning method further includes the following steps: moving the second brush up and down between a first position where the first sliding surface and the second sliding surface contact the substrate, and a second position where only the second sliding surface of the first sliding surface and the second sliding surface contacts the substrate. The cleaning process includes: a configuration step, in which the first brush is configured at a position where its sliding surface slides relative to the substrate while the second brush is in the second position. The sliding surface of the first brush in the configuration process is lower than the second sliding surface when no pressing pressure is applied relative to the substrate, and higher than the first sliding surface.

9. The substrate cleaning method according to claim 8, wherein, A cover portion is provided that covers the first brush and the second brush from above. The substrate cleaning method further includes the following steps: rotating the first brush and the second brush together about a rotation axis extending longitudinally, so that they move between the standby areas of the first brush and the second brush below the cover and the positions where the first brush and the second brush are pressed against the substrate.

10. The substrate cleaning method according to claim 9, wherein, A cylindrical body is provided that surrounds the side periphery of the substrate held by the substrate holding part. If the direction in which the center of the substrate held by the substrate holding part is aligned with the axis of rotation is set as the front-back direction, then: The left end of the standby area does not protrude to the left compared to the left end of the cylinder. The right end of the standby area does not protrude to the right compared to the right end of the cylinder.

11. A substrate cleaning apparatus, wherein, The substrate cleaning apparatus includes: A substrate holding section holds the lower surface of a substrate on which a film is formed on the upper surface; First and second viewings; and A sliding mechanism presses the first and second brushes against the lower surface of the substrate and slides them in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The first brush has higher elasticity than the second brush. The sliding mechanism allows the first brush and the second brush to slide relative to the substrate in such a way that the first brush follows the second brush. A brush arrangement is configured such that the brushes are arranged in the rotational direction in the order of the first brush, the second brush, and the first brush, or in the order of the second brush, the first brush, and the second brush, around a rotational axis extending longitudinally. The sliding mechanism includes: a rotation mechanism that allows the array to rotate clockwise and counterclockwise respectively when viewed from above; and a lifting mechanism that allows the first brush and the second brush to rise and fall respectively. During the clockwise rotation of the array, one brush constituting the array is set as an unused brush and positioned lower than the other brushes. The rotation causes the second brush and the first brush following the second brush to slide on the substrate. During the counterclockwise rotation of the arrangement, one brush that constitutes the arrangement, different from the unused brush during the clockwise rotation, is designated as an unused brush and positioned below the other brushes, so that the second brush and the first brush following the second brush slide on the substrate.

12. The substrate cleaning apparatus according to claim 11, wherein, The sliding mechanism positions the first brush and the second brush at different radial positions on the substrate. The substrate cleaning apparatus also includes a rotating mechanism for causing the first brush and the second brush to rotate and slide on the substrate.

13. The substrate cleaning apparatus according to claim 11, wherein, The substrate cleaning device is equipped with a rotating mechanism that causes the first brush and the second brush to rotate in the same direction when viewed from above.

14. A substrate cleaning apparatus, wherein, The substrate cleaning apparatus includes: A substrate holding section holds the lower surface of a substrate on which a film is formed on the upper surface; First and second viewings; and A sliding mechanism presses the first and second brushes against the lower surface of the substrate and slides them in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The sliding mechanism includes a lifting mechanism that raises and lowers the first brush and the second brush respectively, and forms the following state: In the first sliding state, only the first brush of the first brush and the second brush are pressed against the lower surface of the substrate and allowed to slide. In the second sliding state, only the second brush (of the first and second brushes) is pressed against the lower surface of the substrate and allowed to slide; and After the first sliding state and before the second sliding state, the first brush is lowered and the second brush is raised, and the second brush is pressed onto the substrate while the first brush is pressed onto the substrate.

15. The substrate cleaning apparatus according to claim 14, wherein, The first brush has higher elasticity than the second brush. The substrate cleaning device is equipped with a rotating mechanism that causes the first brush and the second brush to rotate in the same direction when viewed from above.

16. A substrate cleaning apparatus, wherein, The substrate cleaning apparatus includes: A substrate holding section holds the lower surface of a substrate on which a film is formed on the upper surface; First and second viewings; and A sliding mechanism presses the first and second brushes against the lower surface of the substrate and slides them in the same sliding direction relative to the lower surface of the substrate to perform cleaning. The second brush includes a first sliding surface that slides at a first height relative to the substrate and a second sliding surface that is elastic and higher than the first height. The substrate cleaning device is equipped with a lifting mechanism, which causes the second brush to move up and down between a first position where the first sliding surface and the second sliding surface contact the substrate, and a second position where only the second sliding surface of the first sliding surface and the second sliding surface contact the substrate. The sliding mechanism, with the second brush in the second position, positions the first brush at a processing position where the sliding surface of the first brush slides relative to the substrate. The sliding surface of the first brush at the processing position is lower than the second sliding surface when no pressure is applied relative to the substrate, and higher than the first sliding surface.

17. The substrate cleaning apparatus according to claim 16, wherein, The substrate cleaning apparatus also includes: A covering portion that covers the first brush and the second brush from above; and A rotary mechanism that causes the first brush and the second brush to rotate together about a longitudinally extending rotary axis, thereby moving them below the cover portion between the standby areas of the first brush and the second brush and the positions where the first brush and the second brush are pressed against the substrate.

18. The substrate cleaning apparatus according to claim 17, wherein, A cylindrical body is provided that surrounds the side periphery of the substrate held by the substrate holding part. If the direction in which the center of the substrate held by the substrate holding part is aligned with the axis of rotation is set as the front-back direction, then: The left end of the standby area does not protrude to the left compared to the left end of the cylinder. The right end of the standby area does not protrude to the right compared to the right end of the cylinder.

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