Semiconductor devices

By optimizing the structure of the resin packaging, the problem of semiconductor chips being damaged due to internal stress under high voltage and high current is reduced, and higher stability and voltage resistance are achieved.

CN114975299BActive Publication Date: 2025-02-25KK TOSHIBA +1
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
CN202110811080.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-02-18
Filing Date
2021-07-19
Publication Date
2025-02-25
Estimated Expiration
2041-07-19

AI Technical Summary

Technical Problem

The semiconductor chip used at high voltage and high current is damaged due to internal stress caused by the difference in thermal expansion coefficient of the packaging material.

Method used

A semiconductor device is designed, which includes a light emitting element, a light receiving element, a first switching element and a resin package. By optimizing the structure of the resin package, including providing a first side, a second side, and a third side, and providing a plurality of openings in the resin package to reduce internal stress.

Benefits of technology

It effectively reduces the stress caused by temperature changes, prevents damage to the semiconductor chip, and improves the stability and voltage resistance of the device.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN114975299B_ABST
    Figure CN114975299B_ABST
Patent Text Reader

Abstract

An embodiment provides a semiconductor device that prevents damage to a semiconductor chip caused by internal stress. The semiconductor device of the embodiment comprises: a light-emitting element; a light-receiving element; an input-side terminal; a switch element; a lead including a mounting base on which the switch element is mounted and an output-side terminal; and a resin package that seals the light-emitting element, the light-receiving element, the switch element, and the mounting base. The light-receiving element and the switch element are arranged side by side in a second direction that intersects a first direction from the light-emitting element toward the light-receiving element. The resin package includes: a first side surface from which the input-side terminal extends; a second side surface from which the output-side terminal extends; and a third side surface connected to the first side surface and the second side surface. The switch element is located in the center between the first and second side surfaces. The mounting base is opposite to the third side surface, and has a side surface that is closer to the center side of the resin package than the side surface of the output-side terminal in the second direction.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] [Related applications]

[0002] This application claims priority from Japanese Patent Application No. 2021-23980 (filing date: February 18, 2021) as a basic application. This application includes all the contents of the basic application by reference. Technical Field

[0003] Embodiments relate to a semiconductor device. Background Art

[0004] Semiconductor chips used at high voltage and high current are enlarged in area to increase current carrying capacity. In semiconductor devices in which such semiconductor chips are sealed with resin, the semiconductor chips may be damaged due to internal stress caused by differences in thermal expansion coefficients of packaging materials. Summary of the invention

[0005] Embodiments provide a semiconductor device that prevents damage to a semiconductor chip caused by internal stress.

[0006] A semiconductor device of an embodiment includes: a light emitting element; an input side terminal electrically connected to the light emitting element; a light receiving element disposed at a position opposite to the light emitting element; a first switch element electrically connected to the light receiving element; a first lead including a first mounting base on which the first switch element is mounted and a first output side terminal electrically connected to the first switch element; and a resin package enclosing the light emitting element, the light receiving element, the first switch element and the first mounting base of the first lead. The light receiving element and the first switch element are arranged side by side in a second direction intersecting a first direction from the light emitting element toward the light receiving element. The resin package includes: a first side surface from which the input side terminal extends; a second side surface disposed on the opposite side of the first side surface from which the first output side terminal extends; and a third side surface intersecting the second direction. The first side surface and the second side surface extend along the second direction. The first switch element is enclosed in the center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface. The first lead comprises: a side surface of the first output side terminal intersecting with the second direction; and a side surface of the first mounting base, opposite to the third side surface of the resin package, and the side surface of the first mounting base is arranged in the second direction at a position closer to the center side of the resin package than the position of the side surface of the first output side terminal. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a perspective view schematically showing a semiconductor device according to an embodiment.

[0008] Figure 2 (a) and (b) are schematic diagrams showing a semiconductor device according to an embodiment.

[0009] Figure 3 (a) to (c) are schematic diagrams showing the configuration of a semiconductor device according to an embodiment.

[0010] Figure 4 (a) to (c) are schematic diagrams showing characteristics of the semiconductor device according to the embodiment.

[0011] Figure 5 (a) and (b) are schematic diagrams showing semiconductor devices according to modified examples of the embodiment. DETAILED DESCRIPTION

[0012] Hereinafter, the embodiments will be described with reference to the accompanying drawings. The same reference numerals are given to the same parts in the drawings and their detailed description is appropriately omitted, and different parts will be described. In addition, the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. may not be the same as the actual one. In addition, even when representing the same part, there is a case where the sizes and ratios of each other are represented differently according to the drawings.

[0013] Furthermore, the configuration and structure of each part are described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are orthogonal to each other and represent the X direction, Y direction, and Z direction, respectively. In addition, the Z direction is sometimes described as the upper direction and the opposite direction is described as the lower direction.

[0014] Figure 1 1 is a perspective view schematically showing a semiconductor device 1 according to an embodiment. The semiconductor device 1 is, for example, a photorelay including a photocoupler.

[0015] The semiconductor device 1 includes a first switching element 10, a second switching element 20, a light receiving element 30, a light emitting element 40, a resin package 50, input terminals 60a to 60h, and output terminals 70a, 70b, 80a, and 80b. The first switching element 10 and the second switching element 20 are, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

[0016] The first switching element 10, the second switching element 20, the light receiving element 30 and the light emitting element 40 are sealed in a resin package 50. The input terminals 60a to 60h and the output terminals 70a, 70b, 80a and 80b are provided so as to extend from the resin package 50, respectively.

[0017] Figure 2 (a) and (b) are schematic diagrams showing a semiconductor device 1 according to an embodiment. Figure 2 (a) is a schematic plan view showing the internal structure of the resin package 50 . Figure 2 (b) is along Figure 2 A cross-sectional view taken along line AA shown in (a).

[0018] like Figure 2 As shown in (a) of FIG. 1 , the semiconductor device 1 includes a first lead 70, a second lead 80, and a third lead 90. The first lead 70, the second lead 80, and the third lead 90 are metal plates made of, for example, copper or an iron-nickel alloy.

[0019] The first lead 70, the second lead 80, and the third lead 90 are sealed inside the resin package 50. A portion of the first lead 70 extends to the outside of the resin package 50 as output-side terminals 70a and 70b. A portion of the second lead 80 extends to the outside of the resin package 50 as output-side terminals 80a and 80b.

[0020] The first lead 70 includes, for example, a mounting base 70m. The first switching element 10 is mounted on the lower surface of the mounting base 70m. The output-side terminals 70a and 70b are electrically connected to the first switching element 10 via the mounting base 70m.

[0021] The second lead 80 includes, for example, a mounting base 80m. The second switching element 20 is mounted on the lower surface of the mounting base 80m. The output-side terminals 80a and 80b are electrically connected to the second switching element 20 via the mounting base 80m.

[0022] The third lead 90 is provided between the first lead 70 and the second lead 80. The light receiving element 30 is mounted on the lower surface of the third lead 90.

[0023] like Figure 2 As shown in FIG. 5( a ), the input-side terminals 60 a to 60 h each include a sealing portion located inside the resin package 50 and a terminal portion extending from the resin package 50 .

[0024] The resin package 50 has a rectangular shape in a plan view, for example, and has short sides extending in the X direction and long sides extending in the Y direction. The input terminals 60a to 60h and the output terminals 70a, 70b, 80a, 80b extend from side surfaces along the long sides of the resin package 50, for example.

[0025] The resin package 50 has a first side surface SS1 along its long side, a second side surface SS2 on the opposite side of the first side surface SS1, a third side surface SS3 along its short side, and a fourth side surface SS4 on the opposite side of the third side surface SS3. The input side terminals 60a to 60h extend outward from the first side surface SS1. The output side terminals 70a, 70b, 80a and 80b extend outward from the second side surface SS2.

[0026] The output side terminals 70a and 70b are separated from the output side terminals 80a and 80b in the Y direction. The output side terminal 70a is provided at one end of the second side surface SS2, and the output side terminal 80b is provided at the other end of the second side surface SS2. The creepage distance between the output side terminal 70b and the output side terminal 80a along the second side surface SS2 is set to a length that enables a predetermined voltage to be applied between the first lead 70 and the second lead 80. That is, the longer the creepage distance between the output side terminal 70b and the output side terminal 80a is, the higher the voltage can be applied between the first lead 70 and the second lead 80 enclosed in the resin package 50.

[0027] like Figure 2 As shown in (a), the third lead 90 is provided in a manner that the entirety thereof is sealed in the resin package 50. That is, by preventing the end 90ef of the third lead 90 from being exposed at the second side surface SS2, it is possible to prevent a decrease in the withstand voltage between the output-side terminal 70b and the output-side terminal 80a. That is, by preventing materials other than the resin from being exposed between the output-side terminal 70b and the output-side terminal 80a, it is possible to stably ensure the withstand voltage between the two terminals.

[0028] In addition, the mounting base 70m of the first lead 70 is set at a position moved toward the center side of the resin package 50 from the position of the output side terminal 70a in the Y direction. For example, the output side terminal 70a has a side 70aa and a side 70ab that intersect the Y direction. The side 70ab is opposite to the output side terminal 70b, and the side 70aa is located on the opposite side of the side 70ab. The mounting base 70m has a side 70ms opposite to the third side SS3 along the short side of the resin package 50. The position of the side 70ms of the mounting base 70m in the Y direction is closer to the center of the resin package 50 than the position of the side 70aa of the output side terminal 70a in the Y direction. Moreover, the mounting base 70m is set in the center between the first side SS1 and the second side SS2 of the resin package 50 in the X direction. In this way, the first lead 70 is set in a manner that the first switch element 10 is sealed at a position close to the center of the resin package 50.

[0029] The first switching element 10 is preferably sealed at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. In addition, the distance WD between the first switching element 10 and the third side surface SS3 of the resin package 50 is wider than half the thickness PT of the resin package 50 in the Z direction.

[0030] The mounting base 80m of the second lead 80 is also provided at a position close to the center of the resin package 50. The mounting base 80m has a side surface 80ms opposite to the fourth side surface SS4 along the short side of the resin package 50. The output side terminal 80b has a side surface 80bb located on the opposite side of the output side terminal 80a in the Y direction. The position of the side surface 80ms of the mounting base 80m in the Y direction is closer to the center of the resin package 50 than the position of the side surface 80bb of the output side terminal 80b in the Y direction. In addition, the mounting base 80m is provided in a manner that is located in the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. That is, the second switch element 20 is sealed in a position close to the center of the resin package 50.

[0031] like Figure 2 As shown in (b), the light receiving element 30 is mounted on the lower surface of the third lead 90. The third lead 90 includes a mounting base 90m and an extension 90ex. The light receiving element 30 is mounted on the lower surface of the mounting base 90m. The extension 90ex is provided, for example, in a manner extending from the mounting base 90m in the X direction. The third lead 90 has an opening 90th between the mounting base 90m and the extension 90ex. The opening 90th is provided to improve the closeness between the resin package 50 and the third lead 90.

[0032] The light emitting element 40 is mounted on the mounting base 60m. The mounting base 60m is provided, for example, to face the mounting base 90m of the third lead 90 and is connected to the input side terminals 60d and 60f (see Figure 3 (b)). The light receiving element 30 and the light emitting element 40 are arranged to face each other between the mounting base 60m and the third lead 90. The light receiving element 30 and the light emitting element 40 are arranged so that the light radiated from the light emitting element 40 is detected by the light receiving element 30.

[0033] The light receiving element 30 is electrically connected to the third lead 90 via the metal wire MW1, for example. The light emitting element 40 is electrically connected to at least one of the input terminal 60d and the input terminal 60f via the mounting base 60m, and is electrically connected to the input terminal 60e via the metal wire MW2.

[0034] The resin package 50 includes a first resin 51, a second resin 53, and a third resin 55. The first resin 51 seals the first switch element 10, the second switch element 20, and the light receiving element 30 therein. The second resin 53 is molded so as to cover the first resin 51. Furthermore, the second resin 53 seals the third lead 90. The third resin 55 seals the light emitting element 40 on the mounting base 60m. The first resin 51 is molded so as to cover the third resin 55.

[0035] The first resin 51 and the second resin 53 are, for example, epoxy resins. The third resin 55 is, for example, silicone resin. The first resin 51 and the third resin 55 allow light from the light emitting element 40 to pass through. The second resin 53 contains a material that shields the light from the light emitting element 40, such as particles of oxides, nitrides, carbides, or composite compounds, carbon, etc. The thermal expansion coefficient of the second resin 53 is preferably greater than the thermal expansion coefficient of the first resin 51, and the first resin 51 is compressed and sealed.

[0036] The first lead 70 and the second lead 80 are provided so as to protrude from the first resin 51 to the outside through the second resin 53. The third lead 90 extends from the first resin 51 to the second resin 53, but is provided so as not to protrude from the second resin 53 to the outside. The third lead 90 is cut after the first resin 51 is molded, and the second resin 53 is molded so as to cover the end 90ef of the third lead 90.

[0037] Figure 3 (a) to (c) are schematic diagrams showing the configuration of the semiconductor device 1 according to the embodiment. Figure 3 (a) is a schematic plan view showing the first lead 70 , the second lead 80 , and the third lead 90 . Figure 3 (b) is a schematic plan view showing the input-side terminals 60a to 60h. Figure 3 (c) is the circuit diagram.

[0038] like Figure 3 As shown in (a), the first switch element 10 is mounted on the lower surface of the mounting base 70m of the first lead 70. The second switch element 20 is mounted on the lower surface of the mounting base 80m of the second lead 80. The light receiving element 30 is mounted on the lower surface of the mounting base 90m of the third lead 90.

[0039] The first switching element 10 has a source terminal ST1 and a gate terminal GT1. The source terminal ST1 is electrically connected to the third lead 90 via, for example, a metal wire MW3. The gate terminal GT1 is electrically connected to the light receiving element 30 via, for example, a metal wire MW4.

[0040] The second switching element 20 has a source terminal ST2 and a gate terminal GT2. The source terminal ST2 is electrically connected to the third lead 90 via, for example, a metal wire MW5. The gate terminal GT2 is electrically connected to the light receiving element 30 via, for example, a metal wire MW6.

[0041] The light receiving element 30 is electrically connected to the third lead 90 via the metal wire MW1, for example. The back surface of the light receiving element 30 may be electrically connected to the third lead 90 or may be electrically insulated from the third lead 90. When the back surface of the light receiving element 30 is electrically connected to the third lead 90, the metal wire MW1 may be omitted.

[0042] like Figure 3 As shown in (b), the input side terminals 60d and 60f are connected to the mounting base 60m. The light emitting element 40 is mounted on the mounting base 60m. The light emitting element 40 is electrically connected to the input side terminals 60d and 60f via the mounting base 60m. An opening 60th is provided between each of the input side terminals 60d and 60f and the mounting base 60m. In addition, the light emitting element 40 is electrically connected to the input side terminal 60e via the metal wire MW2.

[0043] The input-side terminals 60 a to 60 c , 60 g , and 60 f are not connected to other components, and are provided, for example, to ensure stability and mounting strength when the semiconductor device 1 is mounted on a circuit board or the like.

[0044] like Figure 3 As shown in (c), the input terminal 60e is connected to the anode side of the light emitting element 40. In addition, the input terminal 60d (60f) is connected to the cathode side of the light emitting element 40. The light emitting element 40 is, for example, a light emitting diode (LED).

[0045] The light receiving element 30 includes, for example, a plurality of photodiodes 30r and a control circuit 30f. The photodiodes 30r are connected in series and are electrically connected to the control circuit 30f. The control circuit 30f is, for example, a waveform shaping circuit.

[0046] The first switch element 10 and the second switch element 20 are, for example, MOSFETs. The drain of the first switch element 10 is electrically connected to the output terminal 70a (70b). The drain of the second switch element 20 is electrically connected to the output terminal 80a (80b). The source of the first switch element 10 and the source of the second switch element are electrically connected via a third lead 90.

[0047] The anode output of the light receiving element 30 is electrically connected to the gate of the first switching element 10 and the gate of the second switching element. On the other hand, the cathode output of the light receiving element 30 is electrically connected to the source of the first switching element and the source of the second switching element via the third lead 90.

[0048] The light emitting element 40 is driven by, for example, a current (input signal) flowing between the input side terminal 60e and the input side terminal 60d, and emits signal light corresponding to the input signal. The light receiving element 30 detects the signal light of the light emitting element 40, and applies an output voltage corresponding to the input signal between the gate and source of the first switching element 10 and between the gate and source of the second switching element 20. Thus, the electrical conduction between the output side terminal 70a and the output side terminal 80b can be controlled to be turned on and off.

[0049] Figure 4 (a) to (c) are schematic diagrams showing characteristics of the semiconductor device 1 according to the embodiment. Figure 4 (a) is a schematic plan view showing a semiconductor device of a comparative example. Figure 4 (b) is a schematic plan view showing the semiconductor device 1 .

[0050] Figure 4 (a) and Figure 4 (b) is a partial plan view showing the arrangement of the mounting base 70 m of the first lead 70 . Figure 4 (c) is a graph showing the stress applied to the first switching element 10 .

[0051] like Figure 4 As shown in (a), in the semiconductor device of the comparative example, the mounting base 70m is provided near the interface 50if between the first resin 51 and the second resin 53. For example, the side surface 70ms of the mounting base 70m opposite to the side surface along the short side of the resin package 50 is located at the same position as the side surface 70aa of the output side terminal 70a in the Y direction. That is, in a plan view, the side surface of the mounting base 70m and the side surface 70aa of the output side terminal 70a have no step therebetween, but are continuously connected.

[0052] like Figure 4 As shown in (b), in the semiconductor device 1, the mounting base 70m is provided at a position separated from the interface 50if between the first resin 51 and the second resin 53. In other words, the mounting base 70m is preferably provided at a position further away from the side surfaces along the short sides and the side surfaces along the long sides of the resin package 50.

[0053] For example, the mounting base 70m is provided so as to be located in the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. The first switching element 10 mounted on the mounting base 70m is also located in the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. In addition, the side surface 70ms of the mounting base 70m is located closer to the center of the resin package 50 in the Y direction than the side surface 70aa of the output-side terminal 70a.

[0054] Figure 4(c) represents the stress applied to the first switch element 10 mounted on the mounting base 70m. The horizontal axis is the chip position in the direction from the corner of the package 50 where the second side surface SS2 and the third side surface SS3 are in contact toward the center of the one-side half of the package 50, and the vertical axis is the stress. "CE" in the figure represents the position of the first switch element 10 in the semiconductor device of the comparative example. In addition, "EB" represents the position of the first switch element 10 in the semiconductor device 1.

[0055] Figure 4 (c) means in Figure 4 The stress applied to the first switching element 10 at the positions A, B, and C shown in (a) and (b) of FIG. 1 is caused by the difference in thermal expansion coefficients of the materials of the first resin 51 , the second resin 53 , and the first lead 70 .

[0056] Position A corresponds to a corner of the first switching element 10 , and position B is the center of the side surface of the first switching element 10 facing the third side surface SS3 of the resin package 50 . Position C is the center of the side surface of the first switching element 10 facing the second side surface SS2 of the resin package 50 .

[0057] like Figure 4 As shown in (c), the stress applied to the first switch element 10 of the semiconductor device 1 is smaller than the stress applied to the first switch element 10 of the semiconductor device of the comparative example. In particular, it can be seen that the stress applied to the first switch element 10 is greatly reduced at the corner (position A) where chip cracks are likely to occur.

[0058] Thus, by enclosing the first switching element 10 at a position away from the first side surface SS1 , the second side surface SS2 , and the third side surface SS3 of the resin package 50 , stress due to temperature change applied to the first switching element 10 can be reduced, thereby preventing element destruction.

[0059] That is, by making the first switch element 10 away from the end of the resin package 50 where stress concentration is likely to occur, the stress applied to the first switch element 10 can be reduced. In addition, by arranging the mounting base 70m of the first lead 70 at the center between the first side surface SS1 and the second side surface SS2, the first lead 70 is close to the input side terminals 60a to 60d when the resin package 50 is viewed from above. As a result, when the resin package 50 is viewed from above, the area of ​​the region including only the first resin 51 and the second resin 53 is narrowed, and the rigidity with respect to the deformation (for example, bending, etc.) of the package 50 in the Z direction can be improved. As a result, the stress applied to the first switch element 10 can also be reduced.

[0060] In addition, the first lead 70 and the second lead 80 have a plurality of openings 70th (see Figure 2 The second lead 80 has a plurality of openings 80th (see Figure 2 (a)). In addition, in the top view in the Z direction, a portion of the input terminals 60a and 60d overlaps with the mounting base 70m. In addition, a portion of 60f and 60h overlaps with the mounting base 80m. With such a structure, the stress applied to the first switching element 10 and the second switching element 20 is isotropic, which can prevent the elements from being damaged. In addition, it can also be configured so that at least one of the input terminals 60a to 60d overlaps with the mounting base 70m when viewed from above, and at least one of the input side terminals 60f to 60h overlaps with the mounting base 80m when viewed from above.

[0061] The first switch element 10 is enclosed in the center of one half of the resin package 50 in the Y direction, for example, when viewed from above. The second switch element 20 is similarly enclosed at a position separated from the first side surface SS1, the second side surface SS2, and the fourth side surface SS4 of the resin package 50 (see Figure 2 (a)).

[0062] Figure 5 (a) and (b) are schematic diagrams showing a semiconductor device 2 according to a modification of the embodiment. Figure 5 (a) is a perspective view showing the semiconductor device 2 . Figure 5 (b) is along Figure 5 A cross-sectional view of FC shown in (a). FC is a cross section parallel to the YZ plane.

[0063] like Figure 5 As shown in (a), the semiconductor device 2 also includes a first switch element 10, a second switch element 20, a light receiving element 30, and a light emitting element 40 (not shown) sealed inside a resin package 50. The first switch element 10 is mounted on the lower surface of the mounting base 70m of the first lead 70, and the second switch element 20 is mounted on the lower surface of the mounting base 80m of the second lead 80. The light receiving element 30 is mounted on the lower surface of the mounting base 90m of the third lead 90. The light emitting element 40 is mounted on the mounting base 60m and is arranged in a manner opposite to the light receiving element 30.

[0064] like Figure 5 As shown in (b), the semiconductor device 2 further includes metal plates 60n and 60p. The metal plate 60n is provided, for example, at a position facing the mounting base 70m and connected to the input side terminals 60a to 60c (see Figure 3(b)). The metal plate 60p is provided, for example, at a position opposite to the mounting base 80m and is connected to the input-side terminals 60g and 60h (see Figure 3 (b)).

[0065] By providing the metal plates 60n and 60p, it is possible to offset the stress generated by the expansion and contraction of the first lead 70, the second lead 80, and the third lead 90, or to disperse and make it uniform in the directions of X, Y, and Z. For example, when the widths of the first lead 70, the second lead 80, and the third lead 90 in the Y direction are respectively set to WUL, WUR, and WUC, and the widths of the metal plates 60n, 60p, and the mounting base 60m in the Y direction are respectively set to WLL, WLR, and WLC, the sum of WUL, WUR, and WUC is set to be substantially the same as the sum of WLL, WLR, and WLC.

[0066] Moreover, when viewed from above, the mounting base 70m is provided so as to cover the space between the mounting base 60m and the metal plate 60n. In addition, the mounting base 80m is provided so as to cover the space between the mounting base 60m and the metal plate 60p. On the other hand, the mounting base 60m includes a portion of the space between the first lead 70 and the third lead 90 when viewed from above. In addition, the mounting base 60m includes the other portion of the space between the second lead 80 and the third lead 90 when viewed from above. Thus, the deflection of the resin package 50 in the Z direction can be suppressed, and the stress applied to the first switch element 10 and the second switch element 20 can be reduced.

[0067] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope or subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. A semiconductor device comprising: Light emitting element; An input-side terminal electrically connected to the light-emitting element; A light receiving element, arranged at a position opposite to the light emitting element; a first switch element electrically connected to the light receiving element, the light receiving element and the first switch element being arranged side by side in a second direction intersecting the first direction from the light emitting element toward the light receiving element; The first lead includes: a first mounting base on which the first switch element is mounted; and a first output-side terminal electrically connected to the first switch element; as well as A resin package encapsulates the light emitting element, the light receiving element, the first switch element and the first mounting base of the first lead, the resin package comprising: a first side surface from which the input side terminal extends; a second side surface provided on the opposite side of the first side surface from which the first output side terminal extends; and a third side surface intersecting the second direction; The first side surface and the second side surface of the resin package extend along the second direction, The first switch element is enclosed at a center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface, The first lead has: a side surface of the first output terminal intersecting the second direction; and a side surface of the first mounting base facing the third side surface of the resin package, The side surface of the first mounting base is disposed at a position closer to the center side of the resin package than the position of the side surface of the first output-side terminal in the second direction. The resin package has: a first resin that seals the light-emitting element, the light-receiving element, the first switch element, and the first mounting base, and allows light emitted by the light-emitting element to pass through; as well as A second resin covers the first resin, has the first side surface, the second side surface and the third side surface, and shields the light emission. A distance between an interface between the first resin and the second resin in the second direction and the side surface of the first mounting base is longer than a distance between the interface and the third side surface.

2. The semiconductor device according to claim 1, wherein A distance between the third side surface of the resin package and the first switching element is wider than half of the thickness of the resin package in the first direction.

3. The semiconductor device according to claim 1 or 2, wherein: The distance between the first side surface of the resin package and the first switching element is equal to the distance between the second side surface of the resin package and the first switching element.

4. The semiconductor device according to claim 1, wherein Also available: A second switch element is enclosed in the resin package and electrically connected to the light receiving element; The second lead includes: a second mounting base on which the second switch element is mounted; and a second output-side terminal electrically connected to the second switch element; as well as The third lead is provided with the light receiving element. The first lead, the second lead and the third lead are arranged side by side in the second direction, The third lead is disposed between the first lead and the second lead, The second mounting base is enclosed in the resin package, The second output-side terminal extends from the second side surface of the resin package, The resin package has a fourth side surface facing the third side surface in the second direction, The second lead has: a side surface of the second output terminal intersecting the second direction; and a side surface of the second mounting base facing the fourth side surface of the resin package, The side surface of the second mounting base is disposed at a position closer to the center of the resin package than the side surface of the second output-side terminal in the second direction. The second switching element is enclosed at a center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface.

5. The semiconductor device according to claim 4, wherein: The third lead is entirely enclosed within the resin package.

6. The semiconductor device according to claim 4 or 5, wherein: Also available: a third mounting base for mounting the light emitting element and electrically connected to the input-side terminal, the third mounting base being enclosed in the resin package and facing the third lead in the first direction, The light emitting element and the light receiving element are arranged to face each other between the third mounting base and the third lead.

7. The semiconductor device according to claim 6, wherein: Also available: a first metal plate enclosed in the resin package and opposed to the first mounting base of the first lead in the first direction; as well as a second metal plate enclosed in the resin package and facing the second mounting base of the second lead in the first direction; The first metal plate, the second metal plate and the third mounting base are arranged side by side in the second direction, The third mounting base is disposed between the first metal plate and the second metal plate.

8. The semiconductor device according to claim 7, wherein: The sum of the widths of the first mounting base of the first lead, the second mounting base of the second lead, and the third lead in the second direction is substantially the same as the sum of the widths of the first metal plate, the second metal plate, and the third mounting base in the second direction.

9. The semiconductor device according to claim 7, wherein: When viewed from the first direction, the third mounting base includes: a portion located in a space between the first lead and the third lead; and a portion located in a space between the second lead and the third lead.

10. The semiconductor device according to claim 8, wherein When viewed from the first direction, the third mounting base includes: a portion located in a space between the first lead and the third lead; and a portion located in a space between the second lead and the third lead.

Citation Information

Patent Citations

  • Automatic joint system

    JP2021023980A

  • Operation display semiconductor switch

    CN1130307A

  • Optically coupled semiconductor relay

    JP2010034261A