OLED display panel

Abstract

The present invention provides an OLED display panel, wherein the pixel definition layer of the OLED display panel comprises a black photoresist layer and an organic material layer covering the black photoresist layer, and the superimposed structure of the black photoresist layer and the organic material layer avoids the pixel opening arrangement; the present invention reduces the reflectivity of the display panel by adding a black organic photoresist on a TFT layer, and at the same time covers a layer of organic material layer on the black photoresist layer to protect the black photoresist layer, thereby reducing the influence of the cone angle of the black photoresist layer on the optical properties of the display panel; at the same time, no flexible additive is needed to be added to the black photoresist layer, thereby avoiding the problem of being unable to pass strict reliability tests such as high temperature, high humidity and sunlight due to the presence of the flexible additive, thereby improving the reliability of the black organic photoresist in the display panel, and at the same time, adjusting the slope angle of the pixel definition layer by the organic material layer covering the black photoresist layer, thereby increasing the optical properties of the display panel.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an OLED display panel. Background Art

[0002] At present, full-color OLED display panels are widely used in mobile devices such as mobile phones. With the upgrade of mobile phone software and hardware, reducing the power consumption of the screen is a very important issue. At present, a protection module is usually attached to the surface of the OLED display panel. The protection module includes a polyvinyl alcohol-type polarizer. The polarizer (POL) uses the principle of polarized light to effectively reduce the reflection intensity of the external ambient light on the screen and shield the influence of the external ambient light on the display panel. However, due to the transmittance of the polarizer itself, the light-emitting device usually has a transmittance of only about 44% after emitting light. In order to achieve a higher light output brightness, more power consumption is required, which greatly attenuates the optical properties of the display panel and reduces the life of the display panel.

[0003] Based on the above reasons, panel manufacturers in the display industry are using color-blocking layers to replace non-polarized technology to reduce power consumption. There is no polarizer (POL) to suppress reflection. Usually, the reduction in the reflectivity of the color filter is achieved through the black matrix. The RGB color film itself has a certain reflectivity, but it cannot completely prevent external light from entering the OLED display panel. After some external light enters the OLED display panel, it will be dispersed at the pixel opening, which is particularly obvious when used outdoors, affecting the display quality.

[0004] In the improved design, the polarizer (POL) structure was eliminated and a black barrier layer and RGB color film layer were added, thereby improving the overall light output efficiency of the display panel and having less impact on the overall reflectivity of the screen. However, such a design has a defect. The existing black barrier layer is used as a pixel definition layer. The black barrier layer usually requires an exposure and development process to obtain it. In order to increase its optical density value, positive photoresist usually cannot meet the demand, so negative photoresist must be used. However, negative photoresist will produce a large pre-tilt angle. In order to modify the taper, material manufacturers add a variety of flexible materials to modify the taper of the black resist, thereby doping a flexible structure so that it can be reflowed again during the subsequent heating process. The black barrier layer prepared by the above method has the following problems: First, due to the presence of flexible additives, this photoresist material cannot pass strict reliability tests such as high temperature, high humidity and sunlight; second, the black organic photoresist is thermally cured and then reflowed, and the obtained taper is still large, which cannot meet the strict characteristic requirements of the subsequent display panel; third, the black barrier layer prepared by the above method has key line width differences, which makes it difficult to control the uniformity of the line width during the process; further improvement is needed. Summary of the invention

[0005] The present invention provides an OLED display panel, which can solve the problem in the prior art that a polarizer (POL) structure is eliminated, a black barrier layer and an RGB color film layer are added, thereby improving the overall light extraction efficiency of the display panel and having little effect on the overall reflectivity of the screen. However, such a design has a defect. The existing black barrier layer is used as a pixel definition layer. The black barrier layer usually requires an exposure and development process to be obtained. In order to increase its optical density value, positive photoresist usually cannot meet the demand, so negative photoresist must be used. However, negative photoresist will produce a large pre-tilt angle. In order to modify the taper, material manufacturers add a variety of flexible materials to modify the taper of the black resist, thereby doping a flexible structure so that it can be reflowed again during the subsequent heating process. The black barrier layer prepared by the above method has the following problems: First, due to the presence of flexible additives, this photoresist material cannot pass strict reliability tests such as high temperature, high humidity and sunlight; second, the taper obtained by thermally curing the black organic photoresist and then reflowing is still large, which cannot meet the strict characteristic requirements of the subsequent display panel; third, the black barrier layer prepared by the above method has key line width differences, which makes it difficult to control the uniformity of the line width during the process.

[0006] To solve the above problems, the technical solution provided by the present invention is as follows:

[0007] An embodiment of the present invention provides an OLED display panel, which includes a substrate, a TFT layer is arranged on the substrate, a pixel definition layer is arranged on the TFT layer, pixel openings are arranged at intervals on the pixel definition layer, light-emitting devices are arranged in the pixel openings, an encapsulation layer is arranged on the light-emitting device, and a color filter layer is arranged on the encapsulation layer.

[0008] The pixel definition layer includes a black photoresist layer and an organic material layer covering the black photoresist layer, and the superimposed structure of the black photoresist layer and the organic material layer is arranged to avoid the pixel opening.

[0009] According to a preferred embodiment of the present invention, the light emitting device at least includes an anode, a light emitting material layer located above the anode, and a cathode located above the light emitting material layer; the black photoresist layer also covers a portion of the anode located outside the pixel opening.

[0010] According to a preferred embodiment of the present invention, the optical density value of the black photoresist layer is greater than or equal to 1, and the thickness of the black photoresist layer is 0.8 um to 2 um.

[0011] According to a preferred embodiment of the present invention, the side of the black photoresist layer away from the TFT layer is a convex arc structure.

[0012] According to a preferred embodiment of the present invention, the material of the organic material layer is one or more of acrylic photoresist, silicon photoresist, and polyimide photoresist.

[0013] According to a preferred embodiment of the present invention, the substrate includes a first flexible layer, a water-blocking layer located on the first flexible layer, and a second flexible layer located on the water-blocking layer, wherein the material of the water-blocking layer is silicon oxide or α-Si, and the first flexible layer and the second flexible layer are a material selected from the group consisting of polyimide, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

[0014] According to a preferred embodiment of the present invention, a light gain layer is further provided between the light emitting device and the encapsulation layer, and the material of the light gain layer comprises one or more materials selected from silicon nitride, silicon oxynitride, aluminum oxide, and zinc oxide.

[0015] According to a preferred embodiment of the present invention, a touch layer is arranged between the encapsulation layer and the color filter layer, the touch layer includes touch units arranged in an array, and the touch units include a driving electrode layer, a sensing electrode layer and an insulating layer located between the driving electrode layer and the sensing electrode layer.

[0016] According to a preferred embodiment of the present invention, the color filter layer includes a color resist layer arranged in alignment with the light-emitting device, and a light-shielding matrix located between the color resist layers.

[0017] The material of the color resist layer is R / G / B color resist of SPR220-4.5 system, and the R / G / B color resist of SPR220-4.5 system is also doped with UV-curable organic material of dyeing particles.

[0018] According to a preferred embodiment of the present invention, the TFT layer includes TFT devices arranged in an array, the anode is electrically connected to the drain of the TFT device through a via, the source of the TFT device is electrically connected to the positive pole of an external power supply, and the cathode is electrically connected to the negative pole of the external power supply.

[0019] Beneficial effects of the present invention: An embodiment of the present invention provides an OLED display panel, the OLED display panel includes a substrate, a TFT layer is arranged on the substrate, a pixel definition layer is arranged on the TFT layer, pixel openings are arranged at intervals in the pixel definition layer, a light-emitting device is arranged in the pixel opening, a packaging layer is arranged on the light-emitting device, and a color filter layer is arranged on the packaging layer; wherein the pixel definition layer includes a black photoresist layer and an organic material layer covering the black photoresist layer, and the superposition structure of the black photoresist layer and the organic material layer avoids the pixel opening; the present invention reduces the reflectivity of the display panel by adding a black organic photoresist on the TFT layer, and at the same time covers a layer of organic material layer on the black photoresist layer to protect the black photoresist layer, thereby reducing the influence of the cone angle of the black photoresist layer on the optical properties of the display panel, and at the same time, there is no need to add a flexible additive to the black photoresist layer, thereby avoiding the problem of failing to pass strict high temperature, high humidity and sunlight reliability tests due to the presence of the flexible additive, thereby improving the reliability of the black organic photoresist in the display panel, and at the same time, adjusting the slope angle of the pixel definition layer by the organic material layer covering the black photoresist layer, thereby increasing the optical properties of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 The figure is a schematic diagram of the structure of an OLED display panel in the prior art.

[0022] Figure 2 Another structural schematic diagram of an OLED display panel in the prior art.

[0023] Figure 3 A structural schematic diagram of a display panel is provided according to an embodiment of the present invention.

[0024] Figure 4 and Figure 5 A structural schematic diagram of a pixel definition layer preparation process of an OLED display panel is provided for an embodiment of the present invention. DETAILED DESCRIPTION

[0025] The following descriptions of the embodiments are made with reference to the attached diagrams to illustrate specific embodiments in which the present invention may be implemented. The directional terms mentioned in the present invention, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only with reference to the directions of the attached diagrams. Therefore, the directional terms used are used to illustrate and understand the present invention, rather than to limit the present invention. In the figures, units with similar structures are represented by the same reference numerals, and the dotted lines in the figures represent those that do not exist in the structure and only illustrate the shape and position of the structure.

[0026] like Figure 1 As shown, the OLED display panel 10 in the prior art is composed of three primary colors: red, green, and blue. According to the principle of three primary colors, various colors can be generated by controlling the monochrome grayscale of red, green, and blue of the sub-pixel unit, thereby displaying a color picture. The OLED display panel 10 includes a substrate 11, a TFT layer located on the substrate 11, a light-emitting device layer located on the TFT layer, an encapsulation layer located on the light-emitting device layer, and a touch layer 26 located on the encapsulation layer 25, a polarizer 27 (POL) located on the touch layer 26, an optically transparent adhesive layer 28 located on the polarizer 27 (POL), and a protective cover plate 29 located on the optically transparent adhesive layer 28. The substrate 11 includes a first polyimide layer 111, an inorganic material layer 112 located on the first polyimide layer 111, and a second polyimide layer 113 located on the inorganic material layer 112. The TFT layer includes a light-shielding layer 12 located on the substrate 11, a buffer layer 13 located on the light-shielding layer 12, and a TFT device located on the buffer layer 13, such as a TFT device 14. A pixel definition layer 16 is arranged on the TFT device, a spacer 17 is arranged on the pixel definition layer 16, the pixel definition layer 16 is arranged at intervals to form a pixel opening, and a light-emitting device layer is arranged in the pixel opening. The light-emitting device layer includes an anode, a hole injection layer and a hole transport layer 18 located on the anode, a light-emitting material layer located on the hole injection layer and the hole transport layer 18, an electron transport layer 21 and an electron injection layer 22 located on the light-emitting material layer, and a cathode layer 23 located on the electron transport layer 21 and the electron injection layer 22. A lithium fluoride layer 24 is also arranged on the cathode layer 23. The hole injection layer, the hole transport layer 18, the electron transport layer 21, the electron injection layer 22 and the cathode layer 23 are laid as a whole layer. The light-emitting units in the light-emitting material layer are arranged at intervals, and the anodes in the anode are also arranged at intervals, such as the light-emitting material layer 19 on the anode 15. The encapsulation layer 25 is located on the light-emitting device layer and covers the light-emitting device layer. The encapsulation layer 25 includes a first inorganic layer 251, an organic layer 252, and a second inorganic layer 253. The first inorganic layer 251 and the second inorganic layer 253 are prepared by physical vapor deposition. The organic layer 252 is generally printed by inkjet printing, which not only has a high light transmittance, but also can effectively relieve the stress of the inorganic layer.

[0027] Since the polarizer 27 (POL) adopts the principle of polarized light, it can effectively reduce the reflection intensity of the external ambient light on the screen and shield the influence of the external ambient light on the display panel. However, due to the transmittance of the polarizer itself, the light-emitting device usually has only about 44% transmittance after emitting light. In order to achieve a higher light output brightness, more power consumption is required, which greatly attenuates the optical properties of the display panel and reduces the life of the display panel.

[0028] Based on the above reasons, Figure 2 As shown, a color resist layer 271 is used to replace the non-polarized technology, a black matrix 272 is arranged between adjacent color resist layers 271, and the pixel definition layer 16 is set to a black resist, thereby reducing power consumption, canceling the polarizer structure (POL), adding a black resist pixel definition layer 16 and an RGB color film layer, thereby improving the overall light output efficiency of the display panel, and having little effect on the overall reflectivity of the screen. Other structures are similar to Figure 1 Similarly, no further description is given here. However, such a design has a defect. The existing black barrier layer is used as a pixel definition layer. The black barrier layer usually needs to be obtained through an exposure and development process. In order to increase its optical density value, positive photoresist usually cannot meet the demand, so negative photoresist must be used. However, negative photoresist will produce a large pre-tilt angle. In order to modify the taper, material manufacturers add a variety of flexible materials to modify the taper of the black resist, thereby doping a flexible structure so that it can be reflowed again during the subsequent heating process. The black barrier layer prepared by the above method has the following problems: First, due to the presence of flexible additives, this photoresist material cannot pass strict reliability tests such as high temperature, high humidity and sunlight; second, the black organic photoresist is thermally cured and then reflowed, and the obtained taper is still large, which cannot meet the strict characteristic requirements of the subsequent display panel; third, the black barrier layer prepared by the above method has a difference in key line width, which makes it difficult to control the uniformity of the line width during the process; further improvement is needed, and this embodiment can solve this defect.

[0029] In order to solve the above technical problems, an embodiment of the present invention provides an OLED display panel, which includes a substrate, a TFT layer is arranged on the substrate, a pixel definition layer is arranged on the TFT layer, pixel openings are arranged at intervals in the pixel definition layer, a light-emitting device is arranged in the pixel opening, a packaging layer is arranged on the light-emitting device, and a color filter layer is arranged on the packaging layer; wherein the pixel definition layer includes a black photoresist layer and an organic material layer covering the black photoresist layer, and the superposition structure of the black photoresist layer and the organic material layer avoids the pixel opening; the present invention reduces the reflectivity of the display panel by adding a black organic photoresist on the TFT layer, and at the same time covers a layer of organic material layer on the black photoresist layer to protect the black photoresist layer, thereby reducing the influence of the cone angle of the black photoresist layer on the optical properties of the display panel, and at the same time, there is no need to add a flexible additive to the black photoresist layer, thereby avoiding the problem of failing to pass strict high temperature, high humidity and sunlight reliability tests due to the presence of the flexible additive, thereby improving the reliability of the black organic photoresist in the display panel, and at the same time, adjusting the slope angle of the pixel definition layer by the organic material layer covering the black photoresist layer, thereby increasing the optical properties of the display panel.

[0030] The light-emitting device in this embodiment at least includes an anode, a light-emitting material layer located on the anode, and a cathode located on the light-emitting material layer; the black photoresist layer also covers part of the anode located outside the pixel opening to avoid the dispersion of external light by the edge of the anode, thereby improving the display quality of the OLED display panel. The black photoresist layer is arranged away from the pixel opening, the optical density value of the black photoresist layer is greater than or equal to 1, and the thickness of the black photoresist layer is 0.8um to 2um. The material of the organic material layer is one or more of acrylic photoresist, silicon photoresist, and polyimide photoresist. In other embodiments, the black photoresist layer is a convex arc structure close to the light-emitting device layer, which can further reduce the reflection intensity of the external ambient light on the display panel screen and shield the influence of the external ambient light on the display panel.

[0031] Specifically, Figure 3As shown, an embodiment of the present invention provides a schematic diagram of a film layer structure of a display panel. The OLED display panel 30 includes a substrate 31, a TFT layer located on the substrate 31, a pixel definition layer 37 located on the TFT layer, and a light-emitting device located in a pixel opening of the pixel definition layer 37, an encapsulation layer 40 located on the light-emitting device, and a touch layer located on the encapsulation layer 40, a color filter layer 42 located on the touch layer, a sealant layer 43 located on the color filter layer 42, an optically transparent sealant layer 44 located on the sealant layer 43, and a protective cover plate 45 located on the optically transparent sealant layer 44. The pixel definition layer 37 is arranged at intervals to form a pixel opening, and the light-emitting device in the pixel opening includes an anode, a light-emitting material layer located above the anode, and a cathode layer located above the light-emitting material layer; wherein the pixel definition layer 37 includes a black photoresist layer 371 and an organic material layer 372 located above the black photoresist layer 371, and in the film thickness direction of the OLED display panel 30, the projection of the black photoresist layer 371 is located in the organic material layer 372, and a spacer 38 is also arranged above the organic material layer 372, that is, the organic material layer 372 completely covers the black photoresist layer 371.

[0032] The substrate 31 in this embodiment includes a first flexible layer 311, a water-blocking layer 312 located on the first flexible layer 311, and a second flexible layer 313 located on the water-blocking layer 312, wherein the material of the water-blocking layer 312 is silicon oxide or α-Si, and the first flexible layer 311 and the second flexible layer 313 are one of polyimide, polycarbonate, polyethylene terephthalate and polyethylene naphthalate. The TFT layer includes a light-shielding layer 32 located on the substrate 31, a buffer layer 33 located on the light-shielding layer 32, and TFT devices located on the buffer layer 33, such as TFT devices 34 and TFT devices 35. In this embodiment, the functional film layers 39 of any two adjacent light-emitting devices are separated from each other; wherein, the light-emitting devices all include an anode and a functional film layer 39 located on the anode, the functional film layer 39 includes a hole injection layer and a hole transport layer located on the anode, a light-emitting material layer located on the hole injection layer and the hole transport layer, an electron transport layer and an electron injection layer located on the light-emitting material layer, and a cathode located on the electron transport layer and the electron injection layer, the anode is electrically connected to the drain of the TFT device through a via hole, the source of the TFT device is electrically connected to the positive electrode of the external power supply, and the cathode layer is electrically connected to the negative electrode of the external power supply. For example, the anode 351 is electrically connected to the drain of the TFT device 34 through a via hole, and the anode 352 is electrically connected to the drain of the TFT device 35 through a via hole. There is also an optical gain layer between the light-emitting device and the encapsulation layer 39, and the material of the optical gain layer includes one or more materials selected from silicon nitride, silicon oxynitride, aluminum oxide, and zinc oxide.

[0033] The encapsulation layer 40 is located above the light-emitting device layer and covers the light-emitting device layer. The encapsulation layer 39 includes a first inorganic layer, an organic layer, and a second inorganic layer. The first inorganic layer and the second inorganic layer are prepared by physical vapor deposition. The organic layer is generally prepared by inkjet printing, which not only has a high light transmittance, but also can effectively relieve the stress of the inorganic layer.

[0034] A touch layer is provided between the encapsulation layer 40 and the color filter layer 42. The touch layer includes a flexible layer 411, a sensing electrode layer 412 located on the flexible layer 411, an insulating layer 413 covering the sensing electrode layer 412, a driving electrode layer 414 located on the insulating layer 413, and a protective layer 415 located on the driving electrode layer 414. The touch layer includes touch units arranged in an array. The touch units include the sensing electrode layer 412, the driving electrode layer 414 aligned with the sensing electrode layer 412, and the insulating layer 413 located between the sensing electrode layer 412 and the driving electrode layer 414.

[0035] The color filter layer 42 includes a color resist layer aligned with the light emitting device and a light shielding matrix 423 between the color resist layers, for example, the red color resist layer 422 is aligned with the anode 352, and the blue color resist layer 421 is aligned with the anode 351. The material of the color resist layer is R / G / B color resist of the SPR220-4.5 system, and the R / G / B color resist of the SPR220-4.5 system is also doped with ultraviolet curing organic material of dyeing particles.

[0036] Figure 4 and Figure 5 A structural schematic diagram of a pixel definition layer preparation process of an OLED display panel is provided in an embodiment of the present invention, such as Figure 4 As shown, firstly, a substrate 31 is prepared, and the substrate 31 includes a first flexible layer 311, a water-blocking layer 312 located on the first flexible layer 311, and a second flexible layer 313 located on the water-blocking layer 312, wherein the material of the water-blocking layer 312 is silicon oxide or α-Si, and the first flexible layer 311 and the second flexible layer 313 are one of polyimide, polycarbonate, polyethylene terephthalate and polyethylene naphthalate. Then, a light-shielding layer 32 is prepared on the substrate 31, and the light-shielding layer 32 is a metal material selected from copper, molybdenum or titanium. A buffer layer 33 is prepared on the light-shielding layer 32, and the buffer layer 33 is a flexible insulating material. The buffer layer 33 can effectively prevent some ions in the substrate from introducing impurities in the subsequent high-temperature process and affecting the product. Finally, a plurality of TFT devices are prepared on the buffer layer 33, and a TFT device 34 is taken as an example. Figure 4 The name of the specific film layer is not marked, but it can be clearly seen from the conventional TFT device film layer that its preparation process includes:

[0037] An active layer is prepared on the buffer layer 33. The material of the active layer can be selected from amorphous silicon. Amorphous silicon is converted into a polycrystalline silicon layer by various methods. The common methods include high temperature curing, excimer laser annealing, or metal induced crystallization. After the semiconductor layer is formed, a specific pattern is formed by a patterning process. Usually, the patterning process refers to the process of coating-exposure-development-etching-stripping in traditional semiconductor processes.

[0038] A first gate insulating layer is prepared on the active layer, a first gate electrode is prepared on the first gate insulating layer, a second gate insulating layer covering the first gate electrode is prepared on the first gate insulating layer, a second gate electrode is prepared on the second gate insulating layer, an interlayer insulating layer covering the second gate electrode is prepared on the first gate insulating layer, a source electrode and a drain electrode are prepared on the interlayer insulating layer, a planarizing layer covering the source electrode and the drain electrode is prepared on the interlayer insulating layer, the planarizing layer is an organic photoresist material, and the optional material is one or more of acrylic photoresist, silicon photoresist, and polyimide photoresist; at this point, the structure of the TFT device 34 is basically formed.

[0039] Figure 5 Combination Figure 4 and Figure 3 A black photoresist layer 371 is formed on the planarization layer, and an organic material layer 372 is formed under the black photoresist layer 371. The superimposed structure of the black photoresist layer 371 and the organic material layer 372 forms a pixel definition layer 37. In the film thickness direction of the OLED display panel 30, the projection of the black photoresist layer 371 is located in the organic material layer 372. The optical density value of the pixel definition layer 37 is greater than or equal to 0.6. The optical density value of the black photoresist layer 371 is greater than or equal to 1, and the thickness of the black photoresist layer 371 is 0.8um to 2um. The material cone angle of the black photoresist layer 371 can be in the range of 20° to 90°, and there is no strict requirement for this cone angle. Because a large amount of flexible additives are no longer added to the material, the limitation in the high temperature and high pressure test process is reduced, thereby indirectly improving the reliability of the pixel definition layer 37. The slope angle of the pixel definition layer 37 is adjusted by the organic material layer covering the black photoresist layer 371, so as to increase the optical characteristics of the display panel. The slope angle of the pixel definition layer 37 is less than or equal to 30°. The material of the organic material layer 372 is one or more materials selected from acrylic photoresist, silicon photoresist, and polyimide photoresist. The organic material layer 372 completely covers the black photoresist layer 371. A spacer 38 is also arranged on the organic material layer 372. The organic material layer 372 and the spacer 38 can be obtained by exposure-development-curing, or by exposure-development-curing with a half-tone mask.

[0040] In summary, although the present invention has been disclosed as above in terms of preferred embodiments, the above preferred embodiments are not intended to limit the present invention. A person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope defined in the claims.

Claims

1. An OLED display panel, characterized in that: It comprises a substrate, a TFT layer is arranged on the substrate, a pixel definition layer is arranged on the TFT layer, pixel openings are arranged at intervals on the pixel definition layer, light emitting devices are arranged in the pixel openings, an encapsulation layer is arranged on the light emitting devices, and a color filter layer is arranged on the encapsulation layer; Among them, the pixel definition layer includes a black photoresist layer and an organic material layer located on the black photoresist layer, the orthographic projection of the organic material layer on the substrate covers the orthographic projection of the black photoresist layer on the substrate, and the superimposed structure of the black photoresist layer and the organic material layer avoids the pixel opening setting.

2. The OLED display panel according to claim 1, characterized in that: The light emitting device at least comprises an anode, a light emitting material layer located on the anode, and a cathode located on the light emitting material layer; the black photoresist layer also covers a portion of the anode located outside the pixel opening.

3. The OLED display panel according to claim 1, characterized in that: The optical density value of the black photoresist layer is greater than or equal to 1, and the thickness of the black photoresist layer is 0.8um to 2um.

4. The OLED display panel according to claim 1, characterized in that: The side of the black photoresist layer away from the TFT layer is an outwardly convex arc structure.

5. The OLED display panel according to claim 1, characterized in that: The material of the organic material layer is one or more materials selected from the group consisting of acrylic photoresist, silicon photoresist, and polyimide photoresist.

6. The OLED display panel according to claim 1, characterized in that: The substrate includes a first flexible layer, a water-blocking layer located on the first flexible layer, and a second flexible layer located on the water-blocking layer, wherein the material of the water-blocking layer is silicon oxide or α-Si, and the first flexible layer and the second flexible layer are one of polyimide, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

7. The OLED display panel according to claim 1, characterized in that: A light gain layer is provided between the light emitting device and the encapsulation layer. The material of the light gain layer includes one or more materials selected from silicon nitride, silicon oxynitride, aluminum oxide, and zinc oxide.

8. The OLED display panel according to claim 1, characterized in that: A touch layer is arranged between the encapsulation layer and the color filter layer. The touch layer includes touch units arranged in an array. The touch units include a driving electrode layer, a sensing electrode layer and an insulating layer located between the driving electrode layer and the sensing electrode layer.

9. The OLED display panel according to claim 1, characterized in that: The color filter layer includes a color resist layer arranged in alignment with the light emitting device, and a light shielding matrix located between the color resist layers; The material of the color resist layer is R / G / B color resist of SPR220-4.5 system, and the R / G / B color resist of SPR220-4.5 system is also doped with UV-curable organic material of dyeing particles.

10. The OLED display panel according to claim 1, characterized in that: The TFT layer includes TFT devices arranged in an array, the anode is electrically connected to the drain of the TFT device through a via, the source of the TFT device is electrically connected to the positive electrode of an external power supply, and the cathode is electrically connected to the negative electrode of the external power supply.

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