Methods for creating and patterning photomasks and photomask graphics

Abstract

This disclosure provides a photomask, a method for fabricating a photomask pattern, and a patterning method. The photomask includes a pattern area, a boundary area, and a correction area. The boundary area is located outside the pattern area, and the correction area is located between the pattern area and the boundary area. The pattern area and the correction area are regions on the photomask where optical proximity effect correction is performed. The photomask includes a first side and a second side opposite to each other in a first direction. The width of the correction area on the first side is less than the sum of the widths of the correction area and the boundary area on the second side, and the width of the correction area on the second side is less than the sum of the widths of the correction area and the boundary area on the first side. This method avoids pattern overlap when performing multiple photomasks.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a photomask, a method for fabricating a photomask pattern, and a patterning method. Background Technology

[0002] With the continuous development of semiconductor technology, the design size of semiconductor devices is shrinking, approaching the limits of photolithography imaging systems. Furthermore, the diffraction effect of ultraviolet light easily leads to pattern distortion on the wafer surface when the pattern on the photomask is projected onto the wafer. This results in a decrease in the final image quality, producing the Optical Proximity Effect (OPE). Pattern distortion on the wafer surface caused by the OPE mainly manifests as offset in the critical dimension (CD), shortened end-of-line (EOL) areas, missed patterns or bridging, and corner rounding.

[0003] Typically, Optical Proximity Correction (OPC) is used to correct the original lithographic pattern, thereby avoiding lithographic defects caused by optical proximity effects. Based on the goal of counteracting optical proximity effects, an optical proximity correction model is established, and the mask pattern is fabricated according to this model. Therefore, the corrected lithographic pattern closely approximates the target pattern.

[0004] However, current optical proximity correction mask patterns often result in pattern overlap between adjacent mask regions during masking.

[0005] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0006] The purpose of this disclosure is to provide a method for creating a mask, a mask pattern, and a patterning method, which can avoid the occurrence of pattern overlap when multiple masks are applied.

[0007] According to one aspect of the present disclosure, a photomask is provided, the photomask comprising:

[0008] Graphics area;

[0009] The boundary region is located outside the graphic area;

[0010] The correction area is located between the graphic area and the boundary area; the graphic area and the correction area are the regions of the mask where optical proximity effect correction is performed.

[0011] The mask includes a first side and a second side opposite each other in a first direction. The width of the correction area located on the first side is less than the sum of the widths of the correction area and the boundary area located on the second side, and the width of the correction area located on the second side is less than the sum of the widths of the correction area and the boundary area located on the first side.

[0012] In one exemplary embodiment of this disclosure, the width of the boundary region located on the first side is equal to the width of the correction region located on the second side, and the width of the correction region located on the first side is equal to the width of the boundary region located on the second side.

[0013] In one exemplary embodiment of this disclosure, the mask includes opposing third and fourth sides in a second direction, the second direction intersecting the first direction; the width of the correction area located on the third side is less than the sum of the widths of the correction area and the boundary area located on the fourth side, and the width of the correction area located on the fourth side is less than the sum of the widths of the correction area and the boundary area located on the third side.

[0014] In one exemplary embodiment of this disclosure, the width of the boundary region located on the third side is equal to the width of the correction region located on the fourth side, and the width of the correction region located on the third side is equal to the width of the boundary region located on the fourth side; the second direction intersects with the first direction.

[0015] In one exemplary embodiment of this disclosure, the graphic area includes a plurality of spaced sub-graphic areas; in the first direction, the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area located on the first side and the widths of the correction area and the boundary area located on the second side.

[0016] In one exemplary embodiment of this disclosure, the graphic area includes a plurality of spaced sub-graphic areas; in the second direction, the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area located on the third side and the widths of the correction area and the boundary area located on the fourth side.

[0017] In one exemplary embodiment of this disclosure, the graphic area includes a plurality of spaced sub-graphic areas, and the mask pattern on at least one of the sub-graphic areas is different from the mask patterns on the other sub-graphic areas.

[0018] In one exemplary embodiment of this disclosure, the graphic area includes a plurality of spaced sub-graphic areas, and the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area located on the same side.

[0019] In one exemplary embodiment of this disclosure, the boundary region is a closed shape.

[0020] According to another aspect of the present disclosure, a method for fabricating a mask pattern is provided, the method comprising:

[0021] An original layout graphic is formed, comprising a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area; the original layout graphic includes a first side and a second side opposite to each other in a first direction, a correction area is formed on the first side with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side; a correction area is formed on the second side with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side;

[0022] Optical proximity correction is performed on the original layout graphic within the graphic area and the correction area to obtain a corrected layout graphic.

[0023] In one exemplary embodiment of this disclosure, a boundary region with a width equal to the width of the correction region located on the second side is formed on the first side, and a correction region with a width equal to the width of the boundary region located on the second side is formed on the first side.

[0024] In one exemplary embodiment of this disclosure, forming an original layout graphic including a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area includes:

[0025] The original map graphic includes a third side and a fourth side in a second direction, and the second direction intersects with the first direction; a correction area is formed on the third side with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side; a correction area is formed on the fourth side with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side.

[0026] In one exemplary embodiment of this disclosure, a boundary region with a width equal to the width of the correction region located on the fourth side is formed on the third side, and a correction region with a width equal to the width of the boundary region located on the fourth side is formed.

[0027] According to another aspect of the present disclosure, a patterning method is provided, the patterning method comprising:

[0028] A plurality of photomasks are provided, each photomask including a pattern area, a boundary area, and a correction area located between the pattern area and the boundary area, wherein the pattern area and the correction area are regions for optical proximity effect correction of the photomask; the photomask includes a first side and a second side opposite to each other in a first direction, wherein the width of the boundary area located on the first side is equal to the width of the correction area located on the second side, and the width of the correction area located on the first side is equal to the width of the boundary area located on the second side; wherein the mask patterns on the pattern areas of the plurality of photomasks are the same or different;

[0029] A mask plate is placed on the first mask area to mask the first mask area;

[0030] A mask is provided on the second mask region to mask the second mask region; wherein the second mask region is adjacent to the first mask region in the first direction, and the boundary region of the mask on the second mask region coincides with the correction region of the mask on the first mask region in the first direction.

[0031] In one exemplary embodiment of this disclosure, each of the photomasks includes opposing third and fourth sides in a second direction, the width of the boundary region located on the third side is equal to the width of the correction region located on the fourth side, and the width of the correction region located on the third side is equal to the width of the boundary region located on the fourth side; the patterning method further includes:

[0032] A mask is provided on a third mask region to perform masking on the third mask region; wherein, the third mask region is adjacent to the first mask region in the second direction, and the boundary region of the mask on the third mask region coincides with the correction region of the mask located on the first mask region in the first direction.

[0033] The mask provided in this disclosure has a boundary region outside the pattern area and the correction area for optical proximity effect correction. The optical proximity effect correction does not exceed this boundary region. When masking multiple target mask areas in the future, by making the width of the correction area on the first side smaller than the sum of the widths of the correction area and the boundary region on the second side, and the width of the correction area on the second side smaller than the sum of the widths of the correction area and the boundary region on the first side, when the masks are set adjacent to each other in the first direction, the correction areas and boundary regions of the two adjacent masks can overlap at least partially, thereby forming an area where optical proximity effect correction is not performed, thus avoiding the phenomenon of pattern overlap between adjacent target mask areas.

[0034] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0035] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0036] Figure 1 This is a schematic diagram of a mask provided according to an embodiment of the present disclosure;

[0037] Figure 2 This is a schematic diagram showing the placement of a mask according to one embodiment of the present disclosure;

[0038] Figure 3 A schematic diagram showing the placement of a mask according to another embodiment of this disclosure;

[0039] Figure 4 A flowchart illustrating a method for fabricating a mask pattern according to an embodiment of this disclosure;

[0040] Figure 5 This is a flowchart of a patterning method provided in one embodiment of the present disclosure. Detailed Implementation

[0041] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0042] Although relative terms such as "up" and "down" are used in this specification to describe the relative relationship of one component of an icon to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped upside down, the component described as "up" will become the component described as "down." When a structure is "up" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure.

[0043] The terms “a,” “one,” “the,” “the,” and “at least one” are used to indicate the existence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first,” “second,” etc. are used only as markers and are not a limitation on the number of objects.

[0044] The embodiments of this disclosure first provide a mask, such as Figure 1 As shown, the mask includes a pattern area 110, a correction area 120, and a boundary area 130. The boundary area 130 is located outside the pattern area 110, and the correction area 120 is located between the pattern area 110 and the boundary area 130. The pattern area 110 and the correction area 120 are the areas of the mask where optical proximity effect correction is performed.

[0045] The photomask includes a first side and a second side opposite to each other in the first direction X. The width of the correction area 120 located on the first side is less than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side. The width of the correction area 120 located on the second side is less than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side.

[0046] The mask provided in this disclosure has a boundary region outside the pattern area and the correction area for optical proximity effect correction. The optical proximity effect correction does not exceed this boundary region. When masking multiple target mask areas in the future, by making the width of the correction area on the first side smaller than the sum of the widths of the correction area and the boundary area on the second side, and the width of the correction area on the second side smaller than the sum of the widths of the correction area and the boundary area on the first side, when the masks are set adjacent to each other in the first direction, the correction areas and boundary areas of the two adjacent masks can overlap at least partially, thereby forming an area where optical proximity effect correction is not performed, thus avoiding the phenomenon of pattern overlap between adjacent target mask areas.

[0047] In one embodiment of this disclosure, the boundary region 130 of the photomask is a closed shape. The photomask may be rectangular, circular, elliptical, triangular, polygonal, or irregular in shape, and the boundary region 130 is a closed ring-shaped shape located on the edge of the photomask.

[0048] The following embodiment uses a rectangular photomask as an example for illustration. Figure 1As shown, the photomask includes opposing first sides 141 and second sides 142, and opposing third sides 143 and fourth sides 144; in the first direction X, the width of the boundary region 130 on the first side is A1, and the width of the correction region 120 on the first side is B1; the width of the boundary region 130 on the second side is A2, and the width of the correction region 120 on the first side is B2; in the second direction Y, the width of the boundary region 130 on the third side is A3, and the width of the correction region 120 on the first side is B3; the width of the boundary region 130 on the fourth side is A4, and the width of the correction region 120 on the first side is B4.

[0049] The mask pattern 110 includes multiple spaced sub-pattern areas 1110. The mask pattern on at least one sub-pattern area 110 differs from the mask patterns on other sub-pattern areas 100; that is, the mask patterns in each sub-pattern area 1110 can be the same or different. Furthermore, the mask patterns of the sub-pattern areas 1110 in different mask patterns can be the same or different, and those skilled in the art can configure them as needed; this disclosure does not impose any limitations on this. The mask pattern being rectangular does not limit it to a shape with four right angles. The corners of the mask can also be rounded or chamfered; for example, shapes with notches on the sides can be considered rectangular. Of course, the mask pattern can also be trapezoidal, polygonal, circular, etc., and this disclosure does not impose any limitations on this.

[0050] In this design, multiple sub-pattern areas (dies) 1110 within the pattern area 110 are provided with scribe lines to allow for the subsequent cutting and separation of the multiple sub-pattern areas 1110 into independent chips after packaging. The correction area 120 and the boundary area 130 located on the same side form the scribe lines in this area.

[0051] In the first direction X, the spacing C1 between adjacent sub-graphic areas 1110 is equal to the sum of the widths of the correction area 120 and the boundary area 130 on the first side 141 and the widths of the correction area 120 and the boundary area 130 on the second side 142 (C1 = A1 + B1, C1 = A2 + B2). That is, the size of the cutting path formed by the correction area 120 and the boundary area 130 on the first side 141 and the second side 142 is the same as the size of the cutting path between the multiple sub-graphic areas 1110, which facilitates the subsequent cutting process.

[0052] In the second direction Y, the spacing C2 between adjacent sub-graphic areas 1110 is equal to the sum of the widths of the correction area 120 and the boundary area 130 on the third side 143 and the widths of the correction area 120 and the boundary area 130 on the fourth side 144 (C2 = A3 + B3, C2 = A4 + B4). That is, the size of the cutting path formed by the correction area 120 and the boundary area 130 on the third side 143 and the fourth side 144 is the same as the size of the cutting path between multiple sub-graphic areas 1110, which facilitates the subsequent cutting process.

[0053] In one embodiment of this disclosure, such as Figure 1 As shown, the photomask includes a first side 141 and a second side 142 opposite to each other in the first direction X. The width of the correction area 120 located on the first side 141 is less than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side 142, i.e., B1 < A2 + B2; the width of the correction area 120 located on the second side 142 is less than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side 141, i.e., B2 < A1 + B1.

[0054] By making the width of the correction area 120 located on the first side 141 smaller than the sum of the widths of the correction area 120 located on the second side 142 and the boundary area 130, and the width of the correction area 120 located on the second side 142 smaller than the sum of the widths of the correction area 120 located on the first side 141 and the boundary area 130, when adjacent masks are set in the first direction X, the correction areas and boundary areas of the two adjacent masks can at least overlap, thereby forming an area that does not undergo optical proximity effect correction, and thus avoiding the phenomenon of pattern overlap in adjacent target mask areas.

[0055] Furthermore, the width of the boundary region 130 located on the first side 141 is equal to the width of the correction region 120 located on the second side 142, i.e., A1 = B2; the width of the correction region 120 located on the first side 141 is equal to the width of the boundary region 130 located on the second side 142, i.e., B1 = A2.

[0056] By making the width of the boundary region 130 located on the first side 141 equal to the width of the correction region 120 located on the second side 142, the width of the correction region 120 located on the first side 141 is equal to the width of the boundary region 130 located on the second side 142, as follows: Figure 2As shown, when the first mask 100 and the second mask 200, which are adjacent in the first direction X, are set, the boundary region 130 of the first mask 100 coincides with the correction region 220 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 230 of the second mask 200. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the second mask 200 is set on the second target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 220 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 230 of the second mask 200, through the tangent marks of the first mask 100 and the second mask 200. It is not necessary to re-mark and align the second mask 200.

[0057] In one embodiment of this disclosure, such as Figure 1 As shown, the mask includes a third side 143 and a fourth side 144 opposite each other in the second direction Y, which intersects the first direction X, for example, perpendicularly; the width of the correction area 120 located on the third side 143 is less than the sum of the widths of the correction area 120 located on the fourth side 144 and the boundary area 130, i.e., B3 < A4 + B4; the width of the correction area 120 located on the fourth side 144 is less than the sum of the widths of the correction area 120 located on the third side 143 and the boundary area 130, i.e., B4 < A3 + B3.

[0058] By making the width of the correction area 120 located on the third side 143 smaller than the sum of the widths of the correction area 120 located on the fourth side 144 and the boundary area 130, and the width of the correction area 120 located on the fourth side 144 smaller than the sum of the widths of the correction area 120 located on the third side 143 and the boundary area 130, when adjacent masks are set in the second direction Y, the correction areas and boundary areas of the two adjacent masks can overlap at least, thereby forming an area that does not undergo optical proximity effect correction, thus avoiding the phenomenon of pattern overlap in adjacent target mask areas.

[0059] In one embodiment of this disclosure, the width of the boundary region 130 located on the third side 143 is equal to the width of the correction region 120 located on the fourth side 144, i.e., A3 = B4; the width of the correction region 120 located on the third side 143 is equal to the width of the boundary region 130 located on the fourth side 144, i.e., B3 = A4.

[0060] By making the width of the boundary region 130 located on the third side 143 equal to the width of the correction region 120 located on the fourth side 144, and the width of the correction region 120 located on the third side 143 equal to the width of the boundary region 130 located on the fourth side 144, as follows: Figure 3As shown, when the first mask 100 and the third mask 300, which are adjacent in the second direction Y, are set, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 330 of the third mask 300. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the third mask 300 is set on the third target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 330 of the third mask 300, by means of tangent marking. It is not necessary to re-mark and align the third mask 300.

[0061] Embodiments of this disclosure also provide a method for fabricating a mask pattern, such as... Figure 4 As shown, the manufacturing method includes:

[0062] Step S510: Form an original layout graphic including a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area; the original layout graphic includes a first side and a second side opposite to each other in a first direction, and a correction area with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side is formed on the first side; a correction area with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side is formed on the second side.

[0063] Step S520: Perform optical proximity correction on the original layout graphic within the graphic area and the correction area to obtain the corrected layout graphic.

[0064] The mask pattern fabrication method disclosed herein includes an original pattern with a boundary region outside the pattern area and correction area for optical proximity effect correction. The optical proximity effect correction does not exceed this boundary region. When masking multiple target mask areas subsequently, by making the width of the correction area on the first side smaller than the sum of the widths of the correction area and the boundary area on the second side, and the width of the correction area on the second side smaller than the sum of the widths of the correction area and the boundary area on the first side, when adjacent mask plates are set in the first direction, the correction areas and boundary areas of two adjacent mask plates can at least overlap, thereby forming an area where optical proximity effect correction is not performed, thus avoiding the phenomenon of pattern overlap between adjacent target mask areas.

[0065] The method for creating the mask pattern provided in this disclosure will now be explained in detail.

[0066] In step S510, an original layout graphic is formed, including a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area. The original layout graphic includes a first side and a second side opposite to each other in a first direction. A correction area with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side is formed on the first side. A correction area with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side is formed on the second side.

[0067] Specifically, such as Figure 1 As shown, the original map graphic includes a first side 141 and a second side 142 in the first direction X. A correction area 120 is formed on the first side 141 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side 142. A correction area 120 is formed on the second side 142 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side 141. That is, the width of the correction area 120 located on the first side 141 is smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side 142, i.e., B1 < A2 + B2; the width of the correction area 120 located on the second side 142 is smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side 141, i.e., B2 < A1 + B1.

[0068] By making the width of the correction area 120 located on the first side 141 smaller than the sum of the widths of the correction area 120 located on the second side 142 and the boundary area 130, and the width of the correction area 120 located on the second side 142 smaller than the sum of the widths of the correction area 120 located on the first side 141 and the boundary area 130, when adjacent masks are set in the first direction X, the correction areas and boundary areas of the two adjacent masks can at least overlap, thereby forming an area that does not undergo optical proximity effect correction, and thus avoiding the phenomenon of pattern overlap between adjacent mask areas.

[0069] In one embodiment of this disclosure, a boundary region 130 with a width equal to the width of the correction region 120 located on the second side 142 is formed on the first side 141, and a correction region 120 with a width equal to the width of the boundary region 130 located on the second side 142 is formed, such that the width of the boundary region 130 located on the first side 141 is equal to the width of the correction region 120 located on the second side 142 (i.e., A1 = B2), and the width of the correction region 120 located on the first side 141 is equal to the width of the boundary region 130 located on the second side 142 (i.e., B1 = A2).

[0070] By making the width of the boundary region 130 located on the first side 141 equal to the width of the correction region 120 located on the second side 142, the width of the correction region 120 located on the first side 141 is equal to the width of the boundary region 130 located on the second side 142, as follows: Figure 2As shown, when the first mask 100 and the second mask 200, which are adjacent to each other in the first direction X, are set, the boundary region 130 of the first mask 100 coincides with the correction region 120 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 130 of the second mask 200. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the second mask 200 is set on the second target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 220 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 230 of the second mask 200, by means of tangent marking. It is not necessary to re-mark and align the second mask 200.

[0071] In one embodiment of this disclosure, step S510, forming an original layout graphic including a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area, further includes:

[0072] The original map includes a third side 143 and a fourth side 144 in the second direction Y, which intersects (perpendicularly) the first direction X; a correction area 120 is formed on the third side 143 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side 142; a correction area 120 is formed on the fourth side 144 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side 141.

[0073] Specifically, such as Figure 1 As shown, the original map includes a third side 143 and a fourth side 144 in the second direction Y. A correction area 120 is formed on the third side 143 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the second side 142. A correction area 120 is formed on the fourth side 144 with a width smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the first side 141. The width of the correction area 120 on the third side 143 is smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the fourth side 144, i.e., B3 < A4 + B4. The width of the correction area 120 on the fourth side 144 is smaller than the sum of the widths of the correction area 120 and the boundary area 130 located on the third side 143, i.e., B4 < A3 + B3.

[0074] By making the width of the correction area 120 located on the third side 143 smaller than the sum of the widths of the correction area 120 located on the fourth side 144 and the boundary area 130, and the width of the correction area 120 located on the fourth side 144 smaller than the sum of the widths of the correction area 120 located on the third side 143 and the boundary area 130, when adjacent masks are set in the second direction Y, the correction areas and boundary areas of the two adjacent masks can overlap at least, thereby forming an area that does not undergo optical proximity effect correction, and thus avoiding the phenomenon of pattern overlap between adjacent mask areas.

[0075] In one embodiment of this disclosure, a boundary region 130 with a width equal to the width of the correction region 120 located on the fourth side 144 is formed on the third side 143, and a correction region 120 with a width equal to the width of the boundary region 130 located on the fourth side 144 is formed, such that the width of the boundary region 130 located on the third side 143 is equal to the width of the correction region 120 located on the fourth side 144 (i.e., A3 = B4), and the width of the correction region 120 located on the third side 143 is equal to the width of the boundary region 130 located on the third side 143 (i.e., B3 = A4).

[0076] By making the width of the boundary region 130 located on the third side 143 equal to the width of the correction region 120 located on the fourth side 144, and the width of the correction region 120 located on the third side 143 equal to the width of the boundary region 130 located on the fourth side 144, as follows: Figure 3 As shown, when the first mask 100 and the third mask 300, which are adjacent in the second direction Y, are set, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 300 of the third mask 300. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the third mask 300 is set on the third target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 330 of the third mask 300, by means of tangent marking. It is not necessary to re-mark and align the third mask 300.

[0077] In step S200, optical proximity correction is performed on the original layout pattern within the pattern area and the correction area to obtain the corrected layout pattern.

[0078] Specifically, during semiconductor photolithography, due to the diffraction effect of ultraviolet light, the pattern formed on the wafer surface often undergoes distortion when projecting the mask pattern onto the wafer, resulting in the optical proximity effect. The pattern distortion on the wafer surface caused by the optical proximity effect mainly manifests as linewidth feature size shifts, shortened line ends, pattern missing or bridging, and rounded corners. Optical proximity correction corrects the mask pattern in the pattern area of ​​the original layout, thereby avoiding photolithography defects caused by the optical proximity effect. Based on the goal of counteracting the optical proximity effect, an optical proximity correction model is established, and the mask pattern is manufactured according to this model. Thus, although the optical proximity effect occurs during photolithography, because the mask pattern design has already considered the cancellation of this phenomenon based on optical proximity correction, the lithographic pattern after photolithography is close to the actual desired layout pattern.

[0079] The specific details of optical proximity correction are not described in this disclosure. Those skilled in the art can modify the original pattern according to its actual condition to obtain a corrected pattern. This disclosure avoids pattern overlap between adjacent mask areas by setting a boundary region where optical proximity correction is not performed during the optical proximity correction process.

[0080] After obtaining the revised pattern graphic GDS file, the photomask is manufactured according to the revised pattern graphic GDS file. The photomask provided in the above embodiments of this disclosure can be designed and manufactured by the photomask pattern manufacturing method provided in this embodiment.

[0081] Embodiments of this disclosure also provide a patterning method, such as Figure 5 As shown, the patterning method includes:

[0082] Step S610: Provide multiple photomasks, each photomask including a pattern area, a boundary area, and a correction area located between the pattern area and the boundary area. The pattern area and the correction area are the areas where the photomask performs optical proximity effect correction. The photomask includes a first side and a second side opposite to each other in a first direction. The width of the boundary area on the first side is equal to the width of the correction area on the second side, and the width of the correction area on the first side is equal to the width of the boundary area on the second side. The mask patterns on the pattern areas of the multiple photomasks may be the same or different.

[0083] Step S620: Set a mask on the first mask area and mask the first mask area;

[0084] Step S630: A mask is placed on the second mask area to mask the second mask area; wherein the second mask area is adjacent to the first mask area in the first direction, and the boundary area of ​​the mask on the second mask area coincides with the correction area of ​​the mask on the first mask area in the first direction.

[0085] like Figure 1 As shown, the provided mask can be rectangular, including a first side 141 and a second side 142 opposite each other in the first direction X, and a third side 143 and a fourth side 144 opposite each other in the second direction Y. The pattern area 110 of the mask includes a plurality of spaced sub-pattern areas 1110. The mask patterns in each sub-pattern area 1110 can be the same or different. The mask patterns in the sub-pattern areas 1110 in the pattern area 110 of different masks can be the same or different. Those skilled in the art can set them as needed, and this disclosure does not limit them.

[0086] In one embodiment of this disclosure, such as Figure 1As shown, the width of the boundary region 130 located on the first side 141 is equal to the width of the correction region 120 located on the second side 142, i.e., A1 = B2; the width of the correction region 120 located on the first side 141 is equal to the width of the boundary region 130 located on the second side 142, i.e., B1 = A2. Figure 2 As shown, when the first mask 100 and the second mask 200, which are adjacent to each other in the first direction X, are set, the boundary region 130 of the first mask 100 coincides with the correction region 220 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 230 of the second mask 200. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the second mask 200 is set on the second target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 220 of the second mask 200, and the correction region 120 of the first mask 100 coincides with the boundary region 230 of the second mask 200, by means of tangent marking. It is not necessary to re-mark and align the second mask 200.

[0087] In one embodiment of this disclosure, such as Figure 1 As shown, the width of the boundary region 130 located on the third side 143 is equal to the width of the correction region 120 located on the fourth side 144, i.e., A3 = B4; the width of the correction region 120 located on the third side 143 is equal to the width of the boundary region 130 located on the third side 143, i.e., B3 = A4.

[0088] By making the width of the boundary region 130 located on the third side 143 equal to the width of the correction region 120 located on the fourth side 144, and the width of the correction region 120 located on the third side 143 equal to the width of the boundary region 130 located on the fourth side 144, as follows: Figure 3 As shown, when the first mask 100 and the third mask 300, which are adjacent in the second direction Y, are set, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 330 of the third mask 300. When the first mask 100 is set on the first target mask area, it is marked and aligned. When the third mask 300 is set on the third target mask area, the boundary region 130 of the first mask 100 coincides with the correction region 320 of the third mask 300, and the correction region 120 of the first mask 100 coincides with the boundary region 330 of the third mask 300, by means of tangent marking. It is not necessary to re-mark and align the third mask 300.

[0089] The mask provided in this embodiment can be the mask provided in the mask embodiment, or it can be a mask manufactured by the design method provided in the mask pattern manufacturing method embodiment. For specific details and beneficial effects, please refer to the discussion in the corresponding embodiments above, and it will not be repeated in this embodiment.

[0090] It should be noted that although the steps of the method in this disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in that specific order, or that all the steps shown must be performed to achieve the desired result. Additional or alternative steps may be omitted, multiple steps may be combined into one step, and / or a step may be broken down into multiple steps.

[0091] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the following claims.

[0092] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.

Claims

1. A photomask, characterized in that, include: Graphics area; The boundary region is located outside the graphic area; The correction area is located between the graphic area and the boundary area; the graphic area and the correction area are the regions of the mask where optical proximity effect correction is performed. The mask includes a first side and a second side opposite each other in a first direction. The width of the correction area located on the first side is less than the sum of the widths of the correction area and the boundary area located on the second side. The width of the correction area located on the second side is less than the sum of the widths of the correction area and the boundary area located on the first side. The width of the boundary area located on the first side is equal to the width of the correction area located on the second side. The width of the correction area located on the first side is equal to the width of the boundary area located on the second side.

2. The photomask according to claim 1, characterized in that, The mask includes a third side and a fourth side opposite each other in a second direction, the second direction intersecting the first direction; the width of the correction area located on the third side is less than the sum of the widths of the correction area and the boundary area located on the fourth side, and the width of the correction area located on the fourth side is less than the sum of the widths of the correction area and the boundary area located on the third side.

3. The photomask according to claim 2, characterized in that, The width of the boundary region located on the third side is equal to the width of the correction region located on the fourth side, and the width of the correction region located on the third side is equal to the width of the boundary region located on the fourth side; the second direction intersects with the first direction.

4. The photomask according to claim 2, characterized in that, The graphic area includes a plurality of spaced sub-graphic areas; in the first direction, the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area on the first side and the widths of the correction area and the boundary area on the second side.

5. The photomask according to claim 4, characterized in that, The graphic area includes a plurality of spaced sub-graphic areas; in the second direction, the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area on the third side and the widths of the correction area and the boundary area on the fourth side.

6. The photomask according to claim 1, characterized in that, The graphic area includes multiple spaced sub-graphic areas, and the mask pattern on at least one of the sub-graphic areas is different from the mask patterns on the other sub-graphic areas.

7. The photomask according to claim 1, characterized in that, The graphic area includes multiple spaced sub-graphic areas, and the spacing between adjacent sub-graphic areas is equal to the sum of the widths of the correction area and the boundary area located on the same side.

8. The photomask according to claim 1, characterized in that, The boundary region is a closed shape.

9. A method for fabricating a mask pattern, characterized in that, include: An original layout graphic is formed, comprising a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area; the original layout graphic includes a first side and a second side opposite to each other in a first direction, a correction area is formed on the first side with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side; a correction area is formed on the second side with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side; Optical proximity correction is performed on the original layout graphic within the graphic area and the correction area to obtain a corrected layout graphic. A boundary region with a width equal to the width of the correction region located on the second side is formed on the first side, and a correction region with a width equal to the width of the boundary region located on the second side is formed.

10. The manufacturing method according to claim 9, characterized in that, Forming an original layout graphic that includes a graphic area, a boundary area, and a correction area located between the graphic area and the boundary area includes: The original map graphic includes a third side and a fourth side in a second direction, and the second direction intersects with the first direction; a correction area is formed on the third side with a width smaller than the sum of the widths of the correction area and the boundary area located on the second side; a correction area is formed on the fourth side with a width smaller than the sum of the widths of the correction area and the boundary area located on the first side.

11. The manufacturing method according to claim 10, characterized in that, A boundary region with a width equal to the width of the correction region located on the fourth side is formed on the third side, and a correction region with a width equal to the width of the boundary region located on the fourth side is formed.

12. A patterning method, characterized in that, include: A plurality of photomasks are provided, each photomask including a pattern area, a boundary area, and a correction area located between the pattern area and the boundary area, wherein the pattern area and the correction area are regions for optical proximity effect correction of the photomask; the photomask includes a first side and a second side opposite to each other in a first direction, wherein the width of the boundary area located on the first side is equal to the width of the correction area located on the second side, and the width of the correction area located on the first side is equal to the width of the boundary area located on the second side; wherein the mask patterns on the pattern areas of the plurality of photomasks are the same or different; A mask plate is placed on the first mask area to mask the first mask area; A mask is provided on the second mask region to mask the second mask region; wherein the second mask region is adjacent to the first mask region in the first direction, and the boundary region of the mask on the second mask region coincides with the correction region of the mask on the first mask region in the first direction.

13. The patterning method according to claim 12, characterized in that, Each of the aforementioned photomasks includes opposing third and fourth sides in a second direction, wherein the width of the boundary region located on the third side is equal to the width of the correction region located on the fourth side, and the width of the correction region located on the third side is equal to the width of the boundary region located on the fourth side. The patterning method further includes: A mask is provided on a third mask region to perform masking on the third mask region; wherein, the third mask region is adjacent to the first mask region in the second direction, and the boundary region of the mask on the third mask region coincides with the correction region of the mask located on the first mask region in the first direction.

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