A control method of a semiconductor device

Abstract

The application discloses a control method of a semiconductor device, which comprises a bipolar electrostatic chuck, an electrostatic chucking power supply, an upper radio frequency power supply, a lower radio frequency power supply and a compensation power supply. The control method comprises a plurality of process steps which are executed in sequence, and each process step comprises: if entering a process link of plasma generation, sequentially turning on the upper radio frequency power supply, the lower radio frequency power supply and the compensation power supply; and if exiting the process link of plasma generation, sequentially turning off the compensation power supply, the lower radio frequency power supply and the upper radio frequency power supply. The application can compensate the bias voltage generated by the sheath voltage by using the compensation power supply, so as to avoid the wafer chucking abnormality caused by the bias voltage generated by the sheath voltage, thereby improving the safety and stability of the process. Moreover, the application limits the opening and closing sequence of the upper radio frequency power supply, the lower radio frequency power supply and the compensation power supply, so as to avoid the influence of a previous process step on a subsequent process step, thereby ensuring the normal progress of the process.

Description

Technical Field

[0001] This application relates to the field of etching processes, and more particularly to a method for controlling a semiconductor device. Background Technology

[0002] In the process of etching wafers, IC (Integrated Circuit) etching equipment typically uses a bipolar (positive and negative electrode) coulomb-type ESC (Electrostatic Chuck) to hold the wafer. Specifically, a certain electrostatic voltage is applied to the positive and negative electrodes of the ESC to hold the wafer.

[0003] During the wafer etching process, the radio frequency power supply in the IC etching machine provides the plasma environment required for the process. However, due to the effect of the plasma sheath, a sheath voltage is generated on the wafer. This sheath voltage is negative, which causes a change in the voltage between the positive and negative electrodes of the ESC and the wafer. Specifically, the voltage between the positive electrode of the ESC and the corresponding wafer region increases, while the voltage between the negative electrode of the ESC and the corresponding wafer region decreases. This results in unequal adsorption forces between the positive and negative electrodes of the ESC. As the sheath voltage increases, the imbalance of adsorption forces is further aggravated, which can even lead to abnormal adsorption and consequently, process abnormalities. Summary of the Invention

[0004] The purpose of this application is to provide a control method for semiconductor equipment, which can use a compensation power supply to compensate for the bias voltage generated by the sheath voltage, so as to avoid abnormal wafer adsorption caused by the bias voltage generated by the sheath voltage, thereby improving the safety and stability of the process; moreover, this application defines the turn-on and turn-off sequence of the upper RF power supply, the lower RF power supply and the compensation power supply, so as to avoid the previous process step from affecting the next process step, thereby ensuring the normal operation of the process.

[0005] To address the aforementioned technical problems, this application provides a control method for a semiconductor device, the semiconductor device comprising: a bipolar electrostatic chuck for adsorbing wafers, an electrostatic adsorption power supply for providing voltage to the bipolar electrostatic chuck, an upper radio frequency power supply, a lower radio frequency power supply, and a compensation power supply for compensating for the bias voltage generated by the sheath voltage of the wafer; the control method includes multiple sequentially executed process steps, and each process step includes:

[0006] If the plasma generation process is initiated, the upper radio frequency power supply, the lower radio frequency power supply, and the compensation power supply shall be turned on in sequence.

[0007] If the plasma generation process is terminated, the compensation power supply, the lower radio frequency power supply, and the upper radio frequency power supply shall be turned off in sequence.

[0008] Optionally, sequentially activating the upper RF power supply, the lower RF power supply, and the compensation power supply includes:

[0009] Turn on the upper radio frequency power supply;

[0010] If the turn-on time of the upper radio frequency power supply reaches a preset first waiting time, then the lower radio frequency power supply is turned on.

[0011] If the reflected power of the lower radio frequency power supply meets the preset stability condition, then the compensation power supply is turned on.

[0012] Optionally, the preset stability condition is:

[0013] If the reflected power of the lower RF power supply remains below a preset power threshold for a preset time, then the reflected power of the lower RF power supply reaches a stable state.

[0014] Optionally, each of the process steps further includes:

[0015] If the reflected power of the lower RF power supply does not meet the preset stability condition, a reminder will be issued regarding the instability of the lower RF power supply.

[0016] Optionally, sequentially shutting down the compensation power supply, the lower RF power supply, and the upper RF power supply includes:

[0017] Turn off the compensation power supply;

[0018] If the shutdown time of the compensation power supply reaches a preset first delay time, then the lower radio frequency power supply is turned off;

[0019] If the shutdown time of the lower RF power supply reaches a preset second delay time, then the upper RF power supply is turned off.

[0020] Optionally, the semiconductor device further includes: a spectrometer for acquiring spectral information during the process;

[0021] Each of the aforementioned process steps further includes:

[0022] After the lower radio frequency power supply is turned on, if the turn-on time of the lower radio frequency power supply reaches a preset second waiting time, the spectrometer is turned on, and the process information of the currently executed process step is determined based on the spectral information collected by the spectrometer.

[0023] Optionally, each of the process steps further includes:

[0024] After the upper radio frequency power supply is turned off, if the turn-off time of the upper radio frequency power supply reaches a preset third delay time, the spectrometer is turned off.

[0025] Optionally, the number of the lower radio frequency power supplies is multiple;

[0026] Then, the lower radio frequency power supply is turned on, including:

[0027] A target RF power supply suitable for the currently executed process step is determined from among the multiple RF power supplies, and the target RF power supply is turned on.

[0028] Optionally, turning off the lower radio frequency power supply includes:

[0029] A target RF power supply suitable for the currently performed process step is determined from among the multiple RF power supplies, and the target RF power supply is turned off.

[0030] Optionally, determining the target next RF power supply suitable for the currently executed process step from among the plurality of next RF power supplies includes:

[0031] Read the preset process information to find the target RF power supply used for the currently executed process step.

[0032] This application provides a control method for a semiconductor device, which includes: a bipolar electrostatic chuck for adsorbing wafers, an electrostatic adsorption power supply for providing voltage to the bipolar electrostatic chuck, an upper radio frequency (RF) power supply, a lower RF power supply, and a compensation power supply for compensating for the bias voltage generated by the sheath voltage on the wafer. The control method includes multiple sequentially executed process steps, and each process step includes: if entering a plasma generation process, sequentially turning on the upper RF power supply, the lower RF power supply, and the compensation power supply; if exiting the plasma generation process, sequentially turning off the compensation power supply, the lower RF power supply, and the upper RF power supply. Therefore, this application can utilize the compensation power supply to compensate for the bias voltage generated by the sheath voltage, thereby avoiding abnormal wafer adsorption caused by the bias voltage generated by the sheath voltage, thus improving the safety and stability of the process. Moreover, this application limits the turn-on and turn-off sequence of the upper RF power supply, the lower RF power supply, and the compensation power supply to avoid the previous process step affecting the subsequent process step, thereby ensuring the normal operation of the process. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application;

[0035] Figure 2 A flowchart of each process step in a semiconductor device control method provided in this application embodiment;

[0036] Figure 3 This is a process flow diagram of each process step in a semiconductor device control method provided in an embodiment of this application. Detailed Implementation

[0037] The core of this application is to provide a control method for semiconductor equipment, which can use a compensation power supply to compensate for the bias voltage generated by the sheath voltage, so as to avoid abnormal wafer adsorption caused by the bias voltage generated by the sheath voltage, thereby improving the safety and stability of the process; moreover, this application limits the turn-on and turn-off sequence of the upper RF power supply, the lower RF power supply and the compensation power supply, so as to avoid the previous process step from affecting the next process step, thereby ensuring the normal operation of the process.

[0038] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0039] To address the issue of abnormal adsorption by bipolar electrostatic chucks, this application proposes a semiconductor device, please refer to... Figure 1 , Figure 1This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application. The semiconductor device includes: a bipolar electrostatic chuck 1, an electrostatic adsorption power supply 2, an upper radio frequency power supply 3, a lower radio frequency power supply 4, a compensation power supply 5, a compensation switch 6, a voltage sensor 7 (such as a BVS (Bais Voltage Sensor) sensor), a controller 8 (such as a PMC (lower-level controller)), and an RF (Radio Frequency) filter 9. The bipolar electrostatic chuck 1 is equipped with a positive electrode HV+ and a negative electrode HV- for adsorbing wafer w. The electrostatic adsorption power supply 2 includes a positive adsorption power supply 21 and a negative adsorption power supply 22. The positive adsorption power supply 21 is used to apply a positive voltage to the positive electrode HV+ of the bipolar electrostatic chuck 1 during the process. The negative adsorption power supply 22 is used to apply a negative voltage to the negative electrode HV- of the bipolar electrostatic chuck 1 during the process. The RF filter 9 is used to filter out radio frequency interference signals. The voltage sensor 7 is used to detect the sheath voltage on the wafer w. The controller 8 is used to turn on the compensation power supply 5 by controlling the compensation switch 6 during the process, and to control the compensation voltage output by the compensation power supply 5 according to the sheath voltage to compensate for the bias voltage generated by the sheath voltage, thereby avoiding abnormal wafer adsorption caused by the bias voltage generated by the sheath voltage.

[0040] Based on the aforementioned findings regarding semiconductor equipment, it has been observed that during the manufacturing process, the semiconductor equipment requires more than one process step. When switching from one process step to the next, the power supply of the next process step is affected by the power supply of the previous process step, resulting in slow start-up matching and a maximum value in the lower electrode bias voltage. To address this issue, this application proposes a control method for semiconductor equipment. This control method can be implemented by... Figure 1 The controller in the process executes.

[0041] The control method for semiconductor equipment includes multiple sequentially executed process steps; please refer to... Figure 2 , Figure 2 A flowchart of each process step in a semiconductor device control method provided in this application embodiment, each process step including:

[0042] Step S101: If the plasma generation process is to be entered, turn on the upper RF power supply, lower RF power supply and compensation power supply in sequence.

[0043] Specifically, the controller detects the specific process step that the semiconductor equipment is currently executing. If it detects that the semiconductor equipment is entering the plasma generation process step, it sequentially turns on the upper RF power supply, the lower RF power supply, and the compensation power supply. That is, the turn-on sequence is: upper RF power supply → lower RF power supply → compensation power supply.

[0044] It should be noted that the next power supply to be turned on is only turned on after the previous one has actually been turned on. The reason for the power-on sequence being: upper RF power supply → lower RF power supply → compensation power supply is determined by the process technology.

[0045] Step S102: If the plasma generation process is to be exited, the compensation power supply, the lower RF power supply, and the upper RF power supply shall be turned off in sequence.

[0046] Specifically, the controller detects the specific process step that the semiconductor equipment is currently executing. If it detects that the semiconductor equipment is exiting the plasma generation process step, it sequentially shuts down the compensation power supply, the lower RF power supply, and the upper RF power supply. That is, the shutdown order is: compensation power supply → lower RF power supply → upper RF power supply.

[0047] It should be noted that the next power supply to be shut down is only turned off after the previous one has been completely shut down. The reason for sequentially shutting down the compensation power supply, the lower RF power supply, and the upper RF power supply at each process step is to avoid the next process step being affected by the power supply of the previous one when switching from one process step to the next, thereby improving the start-up matching speed of the next process step and avoiding the occurrence of a maximum value in the lower electrode bias voltage. It is important to emphasize that, after multiple experiments, it was found that even if the compensation power supply, the lower RF power supply, and the upper RF power supply are shut down in the previous process step, if the compensation power supply is shut down after the lower and upper RF power supplies, the next process step still cannot avoid the problems of slow start-up matching speed and a maximum value in the lower electrode bias voltage. After adjusting the power supply shutdown order, it was found that if the compensation power supply is shut down before the lower and upper RF power supplies, i.e., the compensation power supply is shut down first, the problems of slow start-up matching speed and a maximum value in the lower electrode bias voltage will no longer occur in the next process step. Therefore, this application has selected the above power supply shutdown order after multiple experiments and adjustments.

[0048] The semiconductor equipment control method provided in this application can use a compensation power supply to compensate for the bias voltage generated by the sheath voltage, so as to avoid abnormal wafer adsorption caused by the bias voltage generated by the sheath voltage, thereby improving the safety and stability of the process. Moreover, this application limits the turn-on and turn-off sequence of the upper RF power supply, the lower RF power supply and the compensation power supply, so as to avoid the previous process step from affecting the next process step, thereby ensuring the normal operation of the process.

[0049] Based on the above embodiments:

[0050] As an optional embodiment, the upper RF power supply, lower RF power supply, and compensation power supply are turned on sequentially, including:

[0051] Turn on the RF power supply;

[0052] If the turn-on time of the upper RF power supply reaches the preset first waiting time, then the lower RF power supply will be turned on.

[0053] If the reflected power of the RF power supply meets the preset stability conditions, then the compensation power supply will be turned on.

[0054] Specifically, if the controller detects that the semiconductor device is entering the plasma generation process, it first turns on the upper RF power supply. After the upper RF power supply is turned on, it waits for a preset first waiting time (the upper limit of which is 1.2 seconds, and can be set to 0.6 seconds). The purpose of waiting is to ensure that the upper RF power supply is matched and stabilized, that is, the upper RF power supply is successfully ignited, and then the lower RF power supply is turned on.

[0055] After the lower RF power supply is turned on, the controller acquires the reflected power of the lower RF power supply and then determines whether the reflected power of the lower RF power supply meets the preset stability conditions. If the preset stability conditions are met, the compensation power supply is turned on.

[0056] More specifically, the preset first waiting time can be set in the process config (configuration sheet) and can be modified as needed.

[0057] As an optional embodiment, the preset stability condition is:

[0058] If the reflected power of the lower RF power supply remains below a preset power threshold for a preset time, then the reflected power of the lower RF power supply will stabilize.

[0059] Specifically, the preset stability condition of this application can be: if the reflected power of the lower RF power supply is continuously less than the preset power threshold (e.g., continuously less than 20W within 0-20S), then the reflected power of the lower RF power supply reaches stability; otherwise, the reflected power of the lower RF power supply does not reach stability.

[0060] In other words, after the lower RF power supply is turned on, the controller obtains the reflected power of the lower RF power supply and then determines whether the reflected power of the lower RF power supply is continuously less than a preset power threshold within a preset time. If it is continuously less than the preset power threshold within a preset time, the controller determines that the reflected power of the lower RF power supply has reached stability and turns on the compensation power supply; otherwise, the controller determines that the reflected power of the lower RF power supply has not reached stability.

[0061] As an optional embodiment, each process step further includes:

[0062] If the reflected power of the lower RF power supply does not meet the preset stability conditions, a warning will be issued regarding the instability of the lower RF power supply.

[0063] Specifically, when the controller determines that the reflected power of the lower RF power supply does not meet the preset stability conditions, that is, when the reflected power of the lower RF power supply has not reached stability, it will issue an alarm to remind relevant personnel that the lower RF power supply is unstable.

[0064] As an optional embodiment, the compensation power supply, the lower RF power supply, and the upper RF power supply are sequentially turned off, including:

[0065] Turn off the compensation power;

[0066] If the power supply shutdown time reaches the preset first delay time, then the next RF power supply will be shut down.

[0067] If the shutdown time of the lower RF power supply reaches the preset second delay time, then the upper RF power supply will be shut down.

[0068] Specifically, if the controller detects that the semiconductor device is exiting the plasma generation process, it first shuts down the compensation power supply, and after the compensation power supply is shut down, it delays for a preset first delay time (e.g., 500ms). The purpose of the delay is to ensure that the compensation power supply is truly shut down before shutting down the next RF power supply.

[0069] After the lower RF power supply is turned off, the controller delays for a preset second delay time (e.g., 100ms). The purpose of the delay is to ensure that the lower RF power supply is truly turned off before turning off the upper RF power supply.

[0070] As an optional embodiment, the semiconductor device further includes: a spectrometer for acquiring spectral information during the process;

[0071] Each process step also includes:

[0072] After the lower RF power supply is turned on, if the turn-on time of the lower RF power supply reaches the preset second waiting time, the spectrometer is turned on, and the process information of the current process step is determined based on the spectral information collected by the spectrometer.

[0073] Specifically, when semiconductor equipment includes a spectrometer (such as an EPD (End Point Detector) spectrometer), the spectrometer is started after the lower RF power supply is turned on. The startup sequence is: upper RF power supply → lower RF power supply → spectrometer → compensation power supply. Specifically, after the lower RF power supply is turned on, the controller waits for a preset second waiting time (the upper limit of which is 1.2 seconds, and can be set to 0.6 seconds). The purpose of waiting is to ensure that the lower RF power supply is matched and stabilized, that is, the lower RF power supply is successfully ignited. At this time, the process conditions are met, and then the spectrometer is turned on. Based on the spectral information collected by the spectrometer, a spectral map of the entire process step currently being executed can be generated. Then, by analyzing the spectral map, process information related to the currently executed process step can be obtained.

[0074] More specifically, the preset second waiting time can be set in the process config and can be modified as needed.

[0075] As an optional embodiment, each process step further includes:

[0076] After the upper RF power supply is turned off, if the turn-off time of the upper RF power supply reaches the preset third delay time, the spectrometer will be turned off.

[0077] Specifically, when the semiconductor device includes a spectrometer, the spectrometer is turned off after the upper RF power supply is turned off. That is, the shutdown sequence is: compensation power supply → lower RF power supply → upper RF power supply → spectrometer. The specific implementation is: after the controller turns off the upper RF power supply, it delays for a preset third delay time (such as 100ms). The purpose of the delay is to ensure that the upper RF power supply is truly turned off before turning off the spectrometer.

[0078] As an optional embodiment, the number of lower radio frequency power supplies is multiple;

[0079] Then turn on the lower RF power supply, including:

[0080] Determine the target RF power supply from among multiple RF power supplies applicable to the currently executed process step, and turn on the target RF power supply.

[0081] Specifically, semiconductor devices typically have multiple lower RF power supplies, each suited for different process steps, to improve device compatibility. For example, semiconductor devices can implement processes including STI (Shallow Trench Isolation) and DTI (Deep Trench Isolation). Since the lower RF power supply frequency used for the process steps in STI is 13.56MHz, while in DTI, some process steps use a lower RF power supply at 13.56MHz, while others use a lower RF power supply at 2MHz (i.e., DTI involves different lower RF switching), if a semiconductor device wants to be compatible with both STI and DTI processes, it needs to have both a 13.56MHz and a 2MHz lower RF power supply. The upper RF power supply frequency can also be 13.56MHz, meaning the upper RF power supply is high-frequency, and the lower RF power supply is dual-frequency, with one being high-frequency and the other low-frequency.

[0082] Based on this, when the controller is preparing to turn on the next RF power supply, it first determines the next RF power supply (called the target next RF power supply) that is suitable for the current process step from among multiple next RF power supplies, and then turns on the target next RF power supply.

[0083] As an optional embodiment, the number of lower radio frequency power supplies is multiple;

[0084] Then shut down the lower radio frequency power supply, including:

[0085] Determine the target RF power supply from among multiple RF power supplies applicable to the currently executed process step, and shut down the target RF power supply.

[0086] This embodiment is similar in principle to the above embodiment of turning on the radio frequency power supply, and will not be described again here.

[0087] As an optional embodiment, determining a target RF power supply suitable for the currently performed process step from a plurality of RF power supplies includes:

[0088] Read the preset process information to find the target RF power supply used for the currently executed process step.

[0089] In this embodiment of the application, the preset process information (process recipe) includes: the process steps of each process step, the values ​​of various process parameters in each process step, and the termination conditions of each process step.

[0090] Based on this, when the controller is preparing to turn on the next RF power supply, it first reads the preset process information. The purpose is to find the target next RF power supply corresponding to the currently executed process step recorded in the preset process information, and then turn on the target next RF power supply according to the search result. For example, the next RF power supply includes a 2MHz next RF power supply and a 13.56MHz next RF power supply. If the target next RF power supply corresponding to the currently executed process step recorded in the preset process information is a 2MHz next RF power supply, then the 2MHz next RF power supply will be turned on according to the search result.

[0091] The specific principles of the controller shutting down the RF power supply and turning on the RF power supply are similar, and will not be repeated here.

[0092] To enable those skilled in the art to better understand the embodiments of this application, the embodiments of this application are described below:

[0093] Please refer to Figure 3 , Figure 3 A process flow diagram of each process step in a semiconductor device control method provided in this application embodiment. Each process step includes:

[0094] 1) Turn on the RF power supply;

[0095] 2) Wait for the first waiting time;

[0096] 3) Determine whether the frequency of the pre-activated RF power supply is 2MHz or 13.56MHz; if it is 2MHz, then activate the RF power supply at 2MHz; if it is 13.56MHz, then activate the RF power supply at 13.56MHz.

[0097] 4) Wait for the second waiting time;

[0098] 5) The spectrometer is turned on;

[0099] 6) Determine whether the reflected power of the lower RF power supply meets the preset stability conditions; if not, an alarm will be triggered; if yes, the compensation power supply will be turned on.

[0100] 7) The process of generating this plasma is now complete;

[0101] 8) The compensation power supply is turned off;

[0102] 9) Delay the first delay time;

[0103] 10) Determine whether the frequency of the pre-shutdown RF power supply is 2MHz or 13.56MHz; if it is 2MHz, then the RF power supply is shut down at 2MHz; if it is 13.56MHz, then the RF power supply is shut down at 13.56MHz.

[0104] 11) Delay the second delay time;

[0105] 12) Turn off the RF power supply;

[0106] 13) Delay the third delay time;

[0107] 14) The spectrometer is turned off;

[0108] 15) The process ends.

[0109] As will be known to those skilled in the art, with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0110] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms are interchangeable where appropriate; this is merely a way of distinguishing objects with the same attributes in the embodiments of this application. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus that comprises a series of elements is not necessarily limited to those elements, but may include other elements not explicitly listed or inherent to those processes, methods, products, or apparatuses.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A control method for a semiconductor device, characterized in that, The semiconductor device includes: a bipolar electrostatic chuck for adsorbing wafers, an electrostatic adsorption power supply for providing voltage to the bipolar electrostatic chuck, an upper radio frequency power supply, a lower radio frequency power supply, and a compensation power supply for compensating for the bias voltage generated by the sheath voltage on the wafer; the control method includes multiple sequentially executed process steps, and each process step includes: If the plasma generation process is initiated, the upper radio frequency power supply, the lower radio frequency power supply, and the compensation power supply shall be turned on in sequence. If the plasma generation process is terminated, the compensation power supply, the lower radio frequency power supply, and the upper radio frequency power supply shall be turned off in sequence.

2. The control method as described in claim 1, characterized in that, The step of sequentially activating the upper radio frequency power supply, the lower radio frequency power supply, and the compensation power supply includes: Turn on the upper radio frequency power supply; If the turn-on time of the upper radio frequency power supply reaches a preset first waiting time, then the lower radio frequency power supply is turned on. If the reflected power of the lower radio frequency power supply meets the preset stability condition, then the compensation power supply is turned on.

3. The control method as described in claim 2, characterized in that, The preset stability condition is: If the reflected power of the lower RF power supply remains below a preset power threshold for a preset time, then the reflected power of the lower RF power supply reaches a stable state.

4. The control method as described in claim 2, characterized in that, Each of the aforementioned process steps further includes: If the reflected power of the lower RF power supply does not meet the preset stability condition, a reminder will be issued regarding the instability of the lower RF power supply.

5. The control method as described in claim 1, characterized in that, The step of sequentially shutting down the compensation power supply, the lower radio frequency power supply, and the upper radio frequency power supply includes: Turn off the compensation power supply; If the shutdown time of the compensation power supply reaches a preset first delay time, then the lower radio frequency power supply is turned off; If the shutdown time of the lower RF power supply reaches a preset second delay time, then the upper RF power supply is turned off.

6. The control method as described in claim 1, characterized in that, The semiconductor device further includes: a spectrometer for acquiring spectral information during the process; Each of the aforementioned process steps further includes: After the lower radio frequency power supply is turned on, if the turn-on time of the lower radio frequency power supply reaches a preset second waiting time, the spectrometer is turned on, and the process information of the currently executed process step is determined based on the spectral information collected by the spectrometer.

7. The control method as described in claim 6, characterized in that, Each of the aforementioned process steps further includes: After the upper radio frequency power supply is turned off, if the turn-off time of the upper radio frequency power supply reaches a preset third delay time, the spectrometer is turned off.

8. The control method according to any one of claims 1-7, characterized in that, The number of the lower radio frequency power supplies is multiple; Then, the lower radio frequency power supply is turned on, including: A target RF power supply suitable for the currently executed process step is determined from among the multiple RF power supplies, and the target RF power supply is turned on.

9. The control method as described in claim 8, characterized in that, Turning off the lower radio frequency power supply includes: A target RF power supply suitable for the currently executed process step is determined from among the multiple RF power supplies, and the target RF power supply is turned off.

10. The control method as described in claim 8, characterized in that, The step of determining a target next-RF power supply suitable for the currently executed process step from a plurality of said next-RF power supplies includes: Read the preset process information to find the target RF power supply used for the currently executed process step.

Images