A light-emitting diode

Abstract

The present invention provides the following light-emitting diode, which includes a transparent substrate, the first surface of the transparent substrate includes a first area and a second area covered by a semiconductor light-emitting sequence; the semiconductor light-emitting sequence includes a first conductive semiconductor layer, a light-emitting layer and a second conductive semiconductor layer, and one surface of the first conductive semiconductor layer has the light-emitting layer and the second conductive semiconductor layer covering area and a first electrode electrical connection area; an insulating dielectric layer covers the semiconductor light-emitting sequence and has a first opening and a second opening; the periphery of the semiconductor light-emitting sequence includes a first, second, third and fourth edges in a circumferential direction; the second area of ​​the first surface of the transparent substrate has four widths of W1, W2, W3 and W4 around the first, second, third and fourth edges of the semiconductor light-emitting sequence, respectively; the first electrode electrical connection area is located at a portion of the first edge and a portion of the second edge, and W1 is greater than W3.

Description

[0001] This application is a divisional application of Chinese patent application 201980005919.0, entitled “A Light Emitting Diode”, filed on October 8, 2019. Technical Field

[0002] The invention relates to a small light emitting diode. Background Art

[0003] With the decline in LED costs and technological advances, coupled with the recent sluggish growth in the LED lighting industry, domestic and international LED and packaging giants have begun to search for new market growth points. Small-sized LEDs, as a new technology with broad market prospects, have attracted particular attention in the past two years. LEDs under 100 microns without transparent substrates are currently difficult to commercialize on a large scale in the short term due to uncertain technical routes and high costs. However, small-sized LEDs with transparent substrates, as an extension of fine-pitch LED products and a prelude to substrate-free LEDs under 100 microns, have begun shipping in LCD backlights and RGB display products. For example, the P0.9 small-sized LEDs with transparent substrates such as sapphire, which have already entered mass production, effectively guarantee the product's high cost-effectiveness and mass production feasibility because the LEDs, equipment, and processes used are all inherited from fine-pitch LED displays.

[0004] One of the structures of small-sized LEDs supported by a transparent substrate is as follows Figure 1 The structure of a small-sized flip-chip LED is shown, comprising a transparent substrate 100, a semiconductor light-emitting array (102, 103, 104) carried on the first surface of the transparent substrate 100, and a certain width of the edge of the substrate exposed around the semiconductor light-emitting array. The certain width of the edge of the first surface of the substrate exposed is used for laser cutting and cutting. Figure 2 A planar schematic diagram is shown, in which the edges have widths: W1, W2, W3, and W4, and generally W1=W2=W3=W4. The exposed edge of the transparent substrate 100 and the surface of the semiconductor light-emitting sequence will be covered with an insulating dielectric layer. However, due to the limitations of the current implicit cutting process and the cutting road width required for the cleavage process, it is at least 10 microns. As the size of LED light-emitting diodes decreases, the area of ​​the edge region of the transparent substrate exposed around the light-emitting semiconductor sequence will account for a relatively large proportion, and the light absorption area (the insulating layer absorbs light) or the light reflection area (when the insulating dielectric layer is a reflective layer) formed by the exposed edge of the substrate will also account for a correspondingly large proportion, resulting in a serious loss of brightness of the light emitted from the sidewall of the semiconductor light-emitting sequence reaching the first surface of the substrate. Summary of the Invention

[0005] Based on the purpose of the present invention, a first light-emitting diode with a small light-emitting area and improved light-emitting brightness is provided, which includes: a transparent substrate, a semiconductor light-emitting array, an insulating dielectric layer, a first electrode and a second electrode;

[0006] A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area;

[0007] A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate;

[0008] A surface of the first conductive type semiconductor layer includes: a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region;

[0009] an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening;

[0010] A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively;

[0011] When viewed from the second conductive type semiconductor layer, the periphery of the semiconductor light emitting array includes a first edge, a second edge, a third edge and a fourth edge in sequence along a circumferential direction;

[0012] The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4;

[0013] It is characterized in that the first electrode electrical connection area of ​​the first conductive semiconductor layer is located at a portion of the first edge and at least a portion of the second edge, and W1 is greater than W3.

[0014] Preferably, W1+W3 is 10-50 microns, and W2+W4 is 10-50 microns.

[0015] Preferably, the side length of the first edge of the semiconductor light emitting array is greater than or equal to the side length of the second edge.

[0016] Preferably, the W1 is 10-30 microns.

[0017] Preferably, W3 is between 0 and 5 or 5 and 20 microns.

[0018] Preferably, the W1:W3 is (2-40):1.

[0019] Preferably, the first electrode electrical connection region of the first conductive semiconductor layer is located at part of the first edge and part of the second edge, and is not located at the third edge and the fourth edge, W1 is greater than W3, and W2 is greater than or equal to W4.

[0020] More preferably, the W2 is 10 to 30 microns.

[0021] More preferably, the W4 is between 0 and 5 or 5 and 20 microns.

[0022] More preferably, the W2:W4 is (2-40):1.

[0023] The present invention also provides a second light-emitting diode with a small light-emitting area and improved light-emitting brightness, comprising: a transparent substrate, a semiconductor light-emitting array, an insulating dielectric layer, a first electrode and a second electrode;

[0024] A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area;

[0025] A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate;

[0026] A surface of the first conductive type semiconductor layer includes a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region;

[0027] an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening;

[0028] A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively;

[0029] When viewed from the second conductive type semiconductor layer, the periphery of the semiconductor light emitting array includes a first edge, a second edge, a third edge and a fourth edge in sequence along a circumferential direction;

[0030] The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4;

[0031] It is characterized in that the first electrode electrical connection area of ​​the first conductive semiconductor layer is located at the first edge, the entire second edge and part of the third edge, and W2 is greater than W4.

[0032] Preferably, W1 is greater than or equal to W3, and W2 is greater than W4.

[0033] Preferably, the side length of the first edge of the semiconductor light emitting array is greater than or equal to the side length of the second edge.

[0034] Preferably, the W2 is 10-30 microns.

[0035] Preferably, W4 is between 0 and 5 or 5 and 20 microns.

[0036] Preferably, the W1 is 10-30 microns.

[0037] Preferably, the W2:W4 is (2-40):1.

[0038] More preferably, the first or second light-emitting diode has at least one of the following features:

[0039] The ratio of the first region of the first surface of the transparent substrate to the area of ​​the first surface of the transparent substrate is 40% to 90%.

[0040] The side length of the edge of the first surface of the transparent substrate is between 200 and 300 micrometers, 100 and 200 micrometers, or 40 and 100 micrometers.

[0041] The transparent substrate comprises a second surface opposite to the first surface, and the second surface is a main light emitting surface.

[0042] The insulating dielectric layer includes multiple insulating dielectric layers or a single insulating dielectric layer. The multiple insulating dielectric layers are preferably DBR layers or the thickness of the single insulating dielectric layer is greater than 2 microns.

[0043] The thickness of the insulating dielectric layer covering the top surface of the semiconductor light-emitting array is different from the thickness of the insulating dielectric layer covering the sidewalls of the semiconductor light-emitting array.

[0044] The thickness of the insulating dielectric layer covering the sidewalls of the semiconductor light-emitting array is 40-90% of the thickness of the insulating dielectric layer covering the top surface of the semiconductor light-emitting array.

[0045] The surface of the second conductive type semiconductor layer also includes a transparent electrode layer.

[0046] The semiconductor light emitting array is directly grown on the first surface of the transparent substrate, or bonded to the first surface of the transparent substrate via a transparent bonding layer.

[0047] The insulating dielectric layer covers at least a portion of the second area of ​​the first surface of the transparent substrate.

[0048] The present invention also provides a light emitting diode package, comprising a mounting substrate and at least one light emitting diode mounted on the mounting substrate, characterized in that at least one or more or all of the light emitting diodes are the first or second light emitting diodes mentioned above.

[0049] The present invention also provides the following light-emitting diode module, comprising a mounting substrate and multiple rows and columns of light-emitting diodes mounted on the mounting substrate, characterized in that at least one or more or all of the light-emitting diodes are the first or second type of light-emitting diodes mentioned above.

[0050] The present invention also provides a light-emitting diode module comprising a mounting substrate and a plurality of light-emitting diodes mounted on the mounting substrate, wherein the plurality of light-emitting diodes are arranged in multiple rows and columns, and each light-emitting diode comprises: a transparent substrate, a semiconductor light-emitting array, an insulating dielectric layer, a first electrode, and a second electrode;

[0051] A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area;

[0052] A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate;

[0053] A surface of the first conductive type semiconductor layer includes a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region;

[0054] an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening;

[0055] A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively;

[0056] The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4;

[0057] The characteristic is that the light emitting diodes in a row closest to a side of the mounting substrate have a third edge of the semiconductor light emitting array parallel to and closest to the side of the mounting substrate compared to other edges, and W1 is greater than W3.

[0058] Preferably, the LEDs in a row closest to the other side of the mounting substrate have a fourth edge of the semiconductor light emitting array parallel to and closest to the other side of the mounting substrate compared to other edges, and W2 is greater than W4.

[0059] Preferably, W1+W3 is 10-50 microns, and W2+W4 is 10-50 microns.

[0060] Preferably, the W1 is 10-30 microns, and the W3 is between 0-5 or 5-20 microns.

[0061] Preferably, the W1:W3 is (2-40):1.

[0062] Preferably, the W2 is 10-30 microns, and the W4 is between 0-5 or 5-20 microns.

[0063] Preferably, the W2:W4 is (2-40):1.

[0064] Preferably, the side length of the first edge of the semiconductor light emitting array is greater than or equal to the side length of the second edge.

[0065] Preferably, the multiple columns of light emitting diodes include at least one column of red light emitting diodes, one column of green light emitting diodes and one column of blue light emitting diodes.

[0066] Preferably, the multiple rows and columns of light emitting diodes are all blue light emitting diodes.

[0067] Preferably, the mounting substrate includes two horizontal sides and two longitudinal sides, and the light-emitting diodes are arranged in multiple rows along the horizontal sides of the mounting substrate and in multiple columns along the longitudinal sides of the mounting substrate; the light-emitting diodes in the first column and the light-emitting diodes in the last column are respectively closest to and parallel to the two horizontal sides of the mounting substrate with the third edge of the semiconductor light-emitting sequence, and the light-emitting diodes in the first row and the light-emitting diodes in the last row are respectively closest to and parallel to the two longitudinal sides of the mounting substrate with the fourth edge of the semiconductor light-emitting sequence.

[0068] The present invention also provides the following RGB display device, characterized in that it includes the aforementioned light emitting diode modules spliced ​​together.

[0069] The present invention also provides the following backlight display screen, characterized in that it comprises the aforementioned light emitting diode modules spliced ​​together to form a backlight light source.

[0070] The present invention will be described in detail with reference to the following examples. BRIEF DESCRIPTION OF THE DRAWINGS

[0071] Attachment Figure 1 is a cross-sectional schematic diagram of the light emitting diode mentioned in the background technology;

[0072] Attachment Figure 2 A schematic plan view of the light emitting diode mentioned in the background art;

[0073] Attachment Figures 3 and 4 is a schematic structural diagram of the light emitting diode mentioned in Example 1, Figure 3It is a plan diagram. Figure 4 To follow Figure 3 The cross-sectional schematic diagram is obtained at the dotted line position on the plan schematic diagram.

[0074] Attachment Figure 5 The figure is a relationship curve diagram of the horizontal cross-sectional area ratio of the light-emitting semiconductor sequence of the light-emitting diode covering the first surface of the transparent substrate and the horizontal cross-sectional area of ​​the first surface of the transparent substrate of the light-emitting diode.

[0075] Attachment Figures 6 to 16 This is a structural diagram of the manufacturing process of the light emitting diode mentioned in Example 2. Figure 7 for Figure 8 The plan view shown is a cross-sectional view along the longitudinal direction of the dotted line; Figure 9 for Figure 10 The plan view shown is a longitudinal cross-sectional view along the dotted line position; wherein Figure 13 It is a plan diagram. Figure 12 for Figure 13 Schematic diagram of the cross section obtained by the middle dashed line. Figure 15 for Figure 14 Schematic diagram of the cross-sectional structure in which any two semiconductor light-emitting sequences are supported on an unseparated transparent substrate. Figure 16 for Figure 14 A schematic cross-sectional view of a semiconductor light-emitting array in the middle circle supported on a separate transparent substrate that has been separated.

[0076] Attachment Figure 17 A schematic diagram of the packaging structure.

[0077] Attachment Figure 18 It is a schematic diagram of the planar structure of the light emitting diode mentioned in the second embodiment.

[0078] Attachment Figure 19 This is the backlight display screen mentioned in Example 3.

[0079] Attachment Figures 20-22 This is a planar schematic diagram of the packaging module for the backlight display screen mentioned in the third embodiment being assembled on the backlight panel.

[0080] Attachment Figures 23 and 24 1 is a plan view and a cross-sectional view of the light emitting diode mentioned in Example 3.

[0081] Reference numerals:

[0082] 10. Light-emitting diode; 100. Transparent substrate; 102. First conductive semiconductor layer; 103. Light-emitting layer; 104. Second conductive semiconductor layer; 105. Contact electrode layer; 106. Insulating dielectric layer; 107. First electrode; 108. Second electrode; E1. First edge; E2. Second edge; E3. Third edge; E4. Fourth edge; W1, W2, W3, W4. Width; 1061. First opening; 1062. Second opening; 30. Mounting substrate; 301. First electrode; 302. Second electrode; 303. First joint; 304. Second joint. DETAILED DESCRIPTION

[0083] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0084] In the following embodiments of the present invention, words indicating directions, such as "up", "down", "left", "right", "horizontal", "vertical", etc., are only used to enable those skilled in the art to better understand the present invention and are not to be understood as limiting the present invention.

[0085] Example 1

[0086] The present invention provides a light emitting diode 10 with a small light emitting area and improved light emitting brightness, such as Figure 3 The cross-sectional schematic diagram shown includes the following stacked layers: a transparent substrate 100 , a semiconductor light emitting array, an insulating dielectric layer 106 , a first electrode 107 and a second electrode 108 .

[0087] Each structural stacking layer is described in detail below.

[0088] Among them, Figure 3 As shown, transparent substrate 100 can be an insulating substrate or a conductive substrate. Transparent substrate 100 can be a growth substrate for growing a semiconductor light-emitting array, such as a sapphire substrate, or it can be a semiconductor light-emitting array with a transparent bonding layer bonded to transparent substrate 100. Transparent substrate 100 includes a first surface, a second surface, and sidewalls, wherein the first and second surfaces are opposite each other. Transparent substrate 100 includes a plurality of protrusions formed on at least a portion of the first surface. For example, transparent substrate 100 can be a patterned sapphire substrate.

[0089] The LEDs can be small, with a relatively small horizontal area. The size of the LEDs can be reflected by the dimensions of the first surface of the transparent substrate. For example, the side length of the first surface of the transparent substrate 100 is preferably less than or equal to 300 microns, preferably between 100 and 300 microns, or 100 and 200 microns, or even smaller than 100 microns, preferably between 40 and 100 microns. The horizontal area (horizontal cross-sectional area) of the first surface of the transparent substrate is less than 90,000 square microns, or smaller, such as between 10,000 and 50,000 square microns, or less than 10,000 square microns and greater than 2,000 square microns (e.g., 40 microns x 60 microns). The thickness of the transparent substrate 100 is between 40 and 150 microns, with thicker substrates ranging from 80 to 150 microns and thinner substrates ranging from 40 to 80 microns. The thickness of the semiconductor light-emitting array is between 1 and 10 microns. The light emitting diode of this embodiment has the above-mentioned horizontal area and thickness, and thus the light emitting diode can be easily applied to various electronic devices requiring a small and / or thin light emitting device.

[0090] Partially covered by the semiconductor light-emitting array, the first surface of the transparent substrate 100 is divided into a first region covered by the semiconductor light-emitting array and a second region surrounding the semiconductor light-emitting array. During the manufacturing process of light-emitting diodes, scribe lines of a certain width are reserved for substrate separation processes such as laser dicing and cleaving. These scribe lines, after separation, form the second region of the first surface of the transparent substrate 100 surrounding the light-emitting semiconductor array. The width of the scribe lines is at least 10 microns and at most 50 microns.

[0091] The second surface of the transparent substrate 100 is the light emitting surface of the LED and is the main light emitting area.

[0092] The second area of ​​the first surface of the transparent substrate 100 is not covered by the semiconductor light-emitting sequence, that is, during the manufacturing process of the semiconductor light-emitting element, the semiconductor light-emitting sequence has been separated on the surface of the substrate before the substrate is separated, exposing the second area of ​​the first surface of the transparent substrate 100. This can reduce the stress generated by the semiconductor light-emitting sequence on the substrate, thereby promoting the reduction of bending of the light-emitting diode during the manufacturing process, preventing damage to the semiconductor light-emitting sequence, and improving the manufacturing yield.

[0093] like Figure 5As shown, when viewed from above the second conductive semiconductor layer, the first area covered by the semiconductor light-emitting array is smaller than the horizontal area of ​​the first surface of the transparent substrate 100. Preferably, the horizontal cross-sectional area of ​​the first area of ​​the first surface of the transparent substrate 100 accounts for 40% to 90% of the horizontal cross-sectional area of ​​the first surface of the transparent substrate. As the size decreases, the area ratio of the semiconductor light-emitting array also decreases accordingly. For example, when the horizontal area of ​​the light-emitting diode, that is, the area of ​​the first surface of the substrate, is 28,000 square microns, the coverage area ratio of the semiconductor light-emitting array is about 86%, and the area ratio of the second area of ​​the first surface of the substrate surrounding the semiconductor light-emitting array is 14%.

[0094] The semiconductor light-emitting sequence includes a first-conductivity-type semiconductor layer 102, a light-emitting layer 103, and a second-conductivity-type semiconductor layer 104. Specifically, the semiconductor light-emitting sequence may include III-V nitride semiconductors, such as nitride semiconductors such as (Al, Ga, In)N, phosphide semiconductors such as (Al, Ga, In)P, or arsenide semiconductors such as (Al, Ga, In)As. The first-conductivity-type semiconductor layer 102 may include n-type impurities (e.g., Si, Ge, Sn), and the second-conductivity-type semiconductor layer 104 may include p-type impurities (e.g., Mg, Sr, Ba). Furthermore, the impurity types may be reversed. The light-emitting layer 103 may include a multi-quantum well (MQW) structure, which allows the elemental composition ratio of the semiconductor to be adjusted to emit a desired wavelength. In this embodiment, the second-conductivity-type semiconductor layer 104 may be a p-type semiconductor layer.

[0095] like Figure 4 As shown, the first surface of the first conductive type semiconductor layer 102 is divided into an area covered by the mesa 201 and a first electrode electrical connection area. The mesa 201 includes a light emitting layer 103 and a second conductive type semiconductor layer 104 on the light emitting layer 103.

[0096] The surface of the first electrode electrical connection region is not covered by the mesa, and is used for the first electrode 106 to electrically connect to the first conductive semiconductor layer 102. The area of ​​the electrical connection region actually formed by the first electrode 107 on the surface of the first conductive semiconductor layer 102 may be less than or equal to the area of ​​the surface of the first conductive semiconductor layer 102 exposed in the process for positioning the electrical connection region.

[0097] To provide electrical connection between the second electrode 108 and the second conductive semiconductor layer 104, a contact electrode 105 is located on the second conductive semiconductor layer 104. The contact electrode 105 can form an ohmic contact with the second conductive semiconductor layer 104. The contact electrode 105 can include a transparent conductive layer. For example, the transparent conductive layer can include at least one of a light-transmitting conductive oxide such as indium tin oxide, zinc oxide, zinc indium tin oxide, indium zinc oxide, zinc tin oxide, gallium indium tin oxide, indium gallium oxide, zinc gallium oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide, or a light-transmitting metal layer such as Ni / Au. The conductive oxide can also include various dopants. Preferably, the thickness of the contact electrode 105 is 50 to 300 nanometers. The surface contact resistance between the contact electrode 105 and the second conductive semiconductor layer 104 is preferably lower than the surface contact resistance of the metal electrode on the second conductive semiconductor layer 104, thereby reducing the forward voltage (Vf) and improving luminous efficiency.

[0098] The insulating dielectric layer 106 covers the top surface and sidewalls of the semiconductor light-emitting array, as well as the second region of the first surface of the transparent substrate 100. Specifically, when the contact electrode 105 is present, the contact electrode 105 and the top surface and sidewalls of the semiconductor light-emitting array not covered by the contact electrode 105 are all covered by the insulating dielectric layer 106. Furthermore, the insulating dielectric layer 106 may further at least partially or completely cover the second region exposed on the first surface of the transparent substrate, ensuring more stable coverage of the sidewalls of the semiconductor light-emitting array while preventing moisture from entering the vicinity of the semiconductor light-emitting array, thereby reducing the risk of leakage.

[0099] Preferably, the insulating dielectric layer 106 is an insulating reflective layer that covers the top surface and sidewalls of the semiconductor light-emitting array. When light radiated from the light-emitting layer passes through the contact electrode 105 and reaches the surface of the insulating dielectric layer 106, the insulating dielectric layer 106 reflects most of the light back into the semiconductor light-emitting array, while the majority escapes through the second surface of the transparent substrate, reducing light loss caused by light escaping from the surface and sidewalls of the semiconductor light-emitting array. Preferably, the insulating dielectric layer 106 is capable of reflecting at least 80%, or further, at least 90%, of the light intensity radiated from the light-emitting layer that reaches its surface. The insulating dielectric layer 106 may specifically comprise a Bragg reflector. The Bragg reflector may be formed by repeatedly stacking at least two insulating dielectrics with different refractive indices, in a number of 4 to 20 pairs. For example, the insulating dielectric layer may comprise TiO2, SiO2, HfO2, ZrO2, Nb2O5, MgF2, or the like. In some embodiments, the insulating dielectric layer 106 may be deposited in an alternating pattern of TiO2 layers and SiO2 layers.

[0100] Each layer of the Bragg reflector can have an optical thickness of ¼ the peak wavelength of the emission band of the light-emitting layer. The topmost layer of the Bragg reflector can be made of SiNx. Layers made of SiNx have excellent moisture resistance and can protect the light-emitting diode from moisture.

[0101] When the insulating dielectric layer 106 includes a Bragg reflector, the lowest layer of the insulating dielectric layer 106 may include a base layer or an interface layer to improve the film quality of the distributed Bragg reflector. For example, the insulating dielectric layer 106 may include an interface layer formed of SiO2 with a thickness of approximately 0.2 to 1.0 micrometers, and TiO2 / SiO2 layers stacked on the interface layer at a specific period.

[0102] The insulating dielectric layer 106 may also be just a single insulating dielectric layer. Preferably, the reflectivity is usually lower than that of the Bragg reflection layer, and at least 40% of the light is emitted from the insulating dielectric layer 106. Preferably, the thickness is at least 1 micron or more preferably more than 2 microns, such as SiO2, which has excellent moisture resistance and can protect the light-emitting diode from the influence of moisture.

[0103] The insulating dielectric layer 106 has at least one first opening 1061 and a second opening 1062. A first electrode 107 and a second electrode 108 are formed on the surface of the insulating dielectric layer 106. The first electrode 107 contacts the first electrode electrical contact region of the first conductive semiconductor layer 102 through the first opening 1061 to form an electrical connection. The second electrode 108 contacts the contact electrode 105 on the surface of the second conductive semiconductor layer 102 through the second opening 1062 to form an electrical connection. The contact electrode 105 may also have an opening, and the second electrode 108 may partially contact the surface of the second conductive semiconductor layer 104 through the opening of the contact electrode 105. Preferably, the resistance between the second electrode 108 and the second conductive semiconductor layer 104 is higher than the resistance between the contact electrode 105 and the second conductive semiconductor layer 104, so as to minimize current congestion at the location where the second electrode directly contacts the second conductive semiconductor layer 104.

[0104] like Figure 4 As shown, when viewed from the top surface of the semiconductor light emitting array, the periphery of the semiconductor light emitting array includes a first edge E1, a second edge E2, a third edge E3 and a fourth edge E4 in sequence along a circumferential direction.

[0105] The second region of the first surface of the transparent substrate 100 has four widths around the first edge E1, second edge E2, third edge E3, and fourth edge E4 of the semiconductor light-emitting array, respectively, defined as W1, W2, W3, and W4. The widths herein are defined as horizontal widths. Preferably, the first edge E1 is greater than or equal to the length of the second edge E2, and the third edge E3 is greater than or equal to the length of the fourth edge E4.

[0106] According to existing light-emitting diode manufacturing processes, the separation of transparent substrates is generally carried out using an implicit cutting and cleaving process. W1+W3 and W2+W4 are the widths of the cut streets on the first surface of the transparent substrate exposed between adjacent semiconductor light-emitting arrays before the transparent substrate is separated. W1+W3 and W2+W4 are between 10 and 50 microns.

[0107] For small-sized LEDs, to obtain the first electrode contact area, the second-conductivity-type semiconductor layer and the light-emitting layer must be etched to expose a portion of the first-conductivity-type semiconductor layer surface. This mesa-forming process yields a larger light-emitting area than the hole-forming process, which can increase the light-emitting area ratio and enhance brightness. Therefore, the present invention forms the first electrode electrical connection area at the edge of the semiconductor light-emitting array rather than in the middle of the stacked semiconductor light-emitting array layers, and forms a light-emitting area formed by the mesa formed by the light-emitting layer and the second-conductivity-type semiconductor layer.

[0108] The first electrode electrical connection region of the first conductive semiconductor layer 102 is set to be located at part of the first edge E1 and at least part of the second edge E2, that is, the first electrode electrical connection position is set at the edge position of the semiconductor light-emitting sequence, which is conducive to the diffusion distribution of current between the first electrode and the second electrode.

[0109] As an example, Figure 4 As shown, the first electrode electrical connection region of the first conductive semiconductor layer 102 is an exposed region and is only located at a portion of the first edge E1 and a portion of the second edge E2. That is, the first electrode electrical connection region of the first conductive semiconductor layer does not extend to the third edge and the fourth edge.

[0110] As a preferred embodiment, there is one table top.

[0111] For example Figure 4 In the small-sized light-emitting diode supported by the transparent substrate shown, since the area of ​​the light-emitting area formed by the mesa accounts for a relatively small proportion, the second area of ​​the first surface of the substrate around the mesa accounts for a relatively large proportion. In order to reduce the light loss caused by absorption or reflection when the light radiated from the sidewalls around the mesa reaches the second area of ​​the first surface of the substrate, this embodiment provides the following improvement: the second area of ​​the first surface of the transparent substrate has the following width relationship along the four edges around the semiconductor light-emitting sequence: W1 is greater than W3 and or W2 is greater than W4. By reducing the width of W3 and or W4, the area proportion of the second area of ​​the first surface of the transparent substrate around the mesa is reduced. The proportion of light absorbed or reflected after passing through the insulating dielectric layer from the sidewalls around the mesa to the second area of ​​the first surface of the transparent substrate is reduced, and the proportion of directly emitted light is increased, thereby achieving the purpose of improving the brightness of the light output from the second surface side of the transparent substrate.

[0112] As a preferred embodiment, according to the cutting street size required by the current laser stealth cutting process, W1 or W2 is greater than or equal to 10 microns, and more preferably, between 10 and 30 microns.

[0113] As a preferred embodiment, W2 or W4 is less than or equal to 20 microns, or further preferably less than or equal to 5 microns.

[0114] As a preferred embodiment, the ratio of the width of the second area of ​​the first surface of the transparent substrate around the first edge to the width of the second area of ​​the first surface of the transparent substrate around the third edge is 2 to 40 times, for example, 2 to 10 times, or 10 to 20 times, or 20 to 40 times.

[0115] As a preferred embodiment, the ratio of the width of the second area of ​​the first surface of the transparent substrate around the second edge to the width of the second area of ​​the first surface of the transparent substrate around the fourth edge is 2 to 10 times, or 10 to 40 times, or 10 to 20 times, or 20 to 40 times.

[0116] The following is a detailed description of the manufacturing process of the light emitting diode of this embodiment.

[0117] like Figure 6 As shown, the first surface of the transparent substrate 100 includes a first conductive type semiconductor layer 102, a light emitting layer 103 and a second conductive type semiconductor layer 104 stacked in sequence.

[0118] The contact electrode 105 is made of ITO and covers the surface of the second conductive type semiconductor layer 104 .

[0119] like Figures 7 and 8 As shown, a mask is formed by one or two photomasks, and part of the contact electrode 105 and part of the second conductive semiconductor layer 104 and the light-emitting layer 103 are etched to expose part of the first conductive semiconductor layer 102 and form several mesas, which include the light-emitting layer 103, the second conductive semiconductor layer 104 and the contact electrode 105.

[0120] As shown in Figures 8 and 9, a single photomask is used to form a mask, and etching is performed along the first conductive semiconductor layer 102 between adjacent mesas to expose portions of the first surface of the transparent substrate 100, thereby forming multiple independent semiconductor light-emitting arrays. A scribe line region is formed around the exposed first surface of the transparent substrate 100 of each semiconductor light-emitting array, and each semiconductor light-emitting array includes four edges defined in different directions along a circumferential direction: a first edge E1, a second edge E2, a third edge E3, and a fourth edge E4.

[0121] The first conductive type semiconductor layer of each semiconductor light emitting array includes a first surface and an opposite second surface. The first surface includes a mesa covering area and a first electrode electrical connection area. The first electrode electrical connection area is located at a portion of the first edge E1 and a portion of the second edge E2 of the semiconductor light emitting array.

[0122] like Figure 11 As shown, the insulating dielectric layer 106 is coated on the contact electrode 105 and the surface and sidewalls of the exposed semiconductor light-emitting array, as well as on the second region of the first surface of the transparent substrate 100. In existing coating processes, such as evaporation or sputtering, the thickness of the insulating dielectric layer 106 on the sidewalls of the semiconductor light-emitting array is typically lower than that on the top surface of the semiconductor light-emitting array and the second region of the first surface of the transparent substrate due to the shadow effect, resulting in the thickness of the semiconductor light-emitting array on the sidewalls being 40-90% of the thickness on the top surface of the semiconductor array.

[0123] If the insulating dielectric layer 106 is an insulating reflective layer, the difference in thickness can easily cause the reflectivity of the sidewalls of the semiconductor light-emitting array to be lower than the reflectivity of the top surface of the semiconductor array. The light radiated by the light-emitting layer can easily be transmitted through the sidewalls of the mesa and reach the second area of ​​the first surface of the transparent substrate, where it is reflected, resulting in a loss of brightness of the light emitted from the second surface of the transparent substrate 100.

[0124] The insulating dielectric layer 106 is formed with a first opening in the first electrode electrical connection region of the first conductive type semiconductor layer 102 , and a second opening is formed on the surface of the contact electrode 105 .

[0125] like Figures 12-13 As shown, a first electrode 107 and a second electrode 108 are formed on the surface of the insulating dielectric layer 106. The first electrode 107 and the second electrode 108 respectively contact the contact electrode 105 and the first electrode electrical connection region of the first conductive semiconductor layer 102 through the first opening and the second opening. The first electrode 107 and the second electrode 108 include a contact layer and a eutectic layer, and the contact layer and the eutectic layer are made of metal. The minimum horizontal spacing between the first electrode 107 and the second electrode 108 on the insulating dielectric layer 106 is preferably 5 microns.

[0126] like Figures 13 and 14 As shown, the portion of the first surface of the transparent substrate 100 covered by the insulating dielectric layer 106 between adjacent semiconductor light-emitting arrays serves as a scribe line, with a width of between 10 and 50 microns. A laser beam is scanned along the scribe line, starting from the dashed line in the figure, to form several modified hotspots within the transparent substrate below the scribe line. A cleaving blade is then used to cleave the transparent substrate 100 along the scribe line. The modified hotspots formed within the transparent substrate below the dashed line in the figure form fracture surfaces to obtain each individual light-emitting diode.

[0127] Taking the width of the cutting road as 20 microns as an example, the laser beam is scanned with the dotted lines in the X and Y directions as the scanning path to form multiple modified explosion points inside the substrate, as shown in the figure. X The laser scanning path at the dotted line position in the direction deviates 5 microns to the right from the center of the cutting path. Y The laser scanning path at the dotted line position in the direction deviates upward from the center position of the cutting path by 5 microns.

[0128] like Figure 16 The structure shown is Figure 14 By controlling the position of the laser beam scanning, the circled light-emitting diode (LED) in the middle has four widths W1, W2, W3, and W4 along the four edges E1, E2, E3, and E4 of the semiconductor light-emitting sequence, respectively, on the second area of ​​the first surface of the transparent substrate 100 that is not covered by the semiconductor light-emitting sequence. For example, if the width of the cutting path is 20 microns, if the width of W1 is 5 microns, the width of W2 is 15 microns, and if the width of W3 is 5 microns, the width of W4 is 15 microns. Through the above design, since the electrical contact area of ​​the first electrode is located at the first edge E1 and the second edge E2 of the table when viewed from the side of the second conductive semiconductor layer 104, the horizontal side lengths of the table at the first edge E1 and the second edge E2 are shorter than the horizontal side lengths of the table at the third edge E3 and the fourth edge E4, and the light output ratio of the sidewalls around the table at the third edge E3 and the fourth edge E4 is greater than that around the table at the edge E1 and the second edge E2. Therefore, by designing W3 and W4 in the second area of ​​the first surface of the transparent substrate to be smaller, the light reflection or light absorption loss caused by the light passing through the sidewalls around the table at the third edge E3 and the fourth edge E4 reaching the second area of ​​the transparent substrate around the table can be effectively reduced, thereby promoting the direct radiation of light after being emitted from the sidewalls, improving the light output ratio on the second surface side of the transparent substrate, and improving the brightness.

[0129] Preferably, the widths of W1 and W3 are 20 microns or less. Alternatively, the widths of W1 and W3 are 5 microns or less. This allows the separation location to be offset from the center of the scribe line, closer to the semiconductor light-emitting array. This leverages the stress generated by the semiconductor light-emitting array on the transparent substrate to improve the efficiency of the split. The width of W1 is at least 1 micron, and the width of W3 is at least 1 micron. If W1 and W3 are too small, the implicit cutting laser beam will be too close to the semiconductor light-emitting array, adversely damaging its layer structure.

[0130] The small-sized light-emitting diode provided by the present invention can be widely used in display or backlight packaging or applications, and can especially meet the high brightness requirements of backlight products.

[0131] Specifically, this embodiment provides Figure 17In the package shown, at least one light-emitting diode is mounted on a mounting substrate 30. Mounting substrate 30 is an insulating substrate, such as a package module substrate for an RGB display or a module substrate for a backlight display. One surface of mounting substrate 30 has electrically isolated first and second electrodes 301 and 302. The light-emitting diode is located on one surface of mounting substrate 30. First and second electrodes 307 and 308 of the light-emitting diode are connected to first and second electrodes 301 and 302 via first and second bonding portions 303 and 304, respectively. First and second bonding portions 303 and 304 include, but are not limited to, solder, such as eutectic solder or reflow solder.

[0132] The small-sized LED package of this embodiment can be widely used in backlight modules and RGB display modules. For example, to achieve high-dynamic range (HDR) display effects on LCD displays, a backlight module with a small-sized LED array arranged directly below the screen is used. By controlling the lighting and shutting off of individual positions in the backlight module, the dynamic contrast of the screen is improved, resulting in a better display effect. At the same time, by increasing the brightness of a single LED, the brightness of the entire backlight module can also be increased.

[0133] Example 2

[0134] like Figure 18 The structure shown is the structure of the embodiment 1 Figure 4 In an alternative structure of the light-emitting diode shown, the first electrode electrical connection region on the surface of the first conductive type semiconductor layer extends to part of the first edge E1, all of the second edge E2, and part of the third edge E3 of the semiconductor light-emitting array, but does not extend to the fourth edge E4. The location of the first electrode electrical connection region is suitable for structures with a large aspect ratio of the semiconductor light-emitting array's sides, facilitating uniform current diffusion. The side length of the first edge E1 is greater than the side length of the second edge E2. Preferably, the side length of the first edge E1 is greater than the side length of the second edge E2. Preferably, the side length of the first edge E1 is greater than the side length of the second edge E2. The width W2 of the second region of the first surface of the transparent substrate surrounding the second edge E2 of the semiconductor light-emitting array is greater than the width W4 surrounding the fourth edge E4. This design effectively reduces light loss caused by reflection or absorption after reaching the second region of the first surface of the substrate, emitted from the sidewall of the mesa corresponding to the fourth edge of the semiconductor light-emitting array. Preferably, W1+W3 and W2+W4 are between 10 and 50 microns. Preferably, W4 is less than or equal to 20 microns, or more preferably, less than or equal to 5 microns; W4 is between 10 and 30 microns.

[0135] Preferably, the first electrode contact area is a square area on the surface of the first conductive semiconductor layer. The relationship between W2 and W4 does not need to be specifically limited. W2 may be greater than or equal to W4 or W2 may be less than W4; or more preferably, W2=W4.

[0136] Example 3

[0137] Since the size of the single-chip packaging module for backlight or display made of small-sized light-emitting diodes supported by transparent substrates is limited, it is necessary to use backlight packaging modules or RGB modules for further splicing to obtain RGB display screens or backlight display backlight light sources.

[0138] This embodiment further provides a display device for backlighting, such as a television, comprising a backlight source, the backlight source comprising a backplane, the backplane being a conventional SECC (electrolytic sub-lead galvanized steel plate) substrate.

[0139] Or use aluminum substrate, Figures 19-20 The multiple backlight modules shown are spliced ​​and fixed on the back panel. Figure 19 The figure shows the structure of the backlight source obtained by splicing multiple blue light emitting diode modules 30 on the backlight board. X direction, the mounting substrate of the two modules includes a module with multiple rows of light-emitting diodes, along X When splicing two modules in the same direction, the edges of each module are arranged with a row of adjacent LEDs. The distance between the two adjacent rows of LEDs is defined as D1. Due to the gap between the edges of the mounting substrate, when two modules are spliced ​​on adjacent sides, D1 is usually larger than the distance W1 between two adjacent rows of LEDs within a module, which can easily cause dark lines in the splicing. The same problem also exists when RGB modules are spliced ​​into a display.

[0140] As an implementation method, this embodiment also provides the following packaging module for backlight display (liquid crystal display), such as Figure 19 As shown, the module includes a mounting substrate 30. The mounting substrate 30 has four sides, namely two horizontal and two vertical sides. Multiple rows and columns of light-emitting diodes are mounted on the mounting substrate 30. The light-emitting diodes are all blue light-emitting diodes, and the blue light-emitting diodes are all flip-chip light-emitting diodes, or the multiple columns of light-emitting diodes include a row of blue light-emitting diodes, a row of red light-emitting diodes and a row of green light-emitting diodes, and the light emission of the three-color light-emitting diodes can be mixed to form white light.

[0141] The light-emitting diodes mounted on the mounting substrate 30 have the following structural features: a transparent substrate, a semiconductor light-emitting array, an insulating dielectric layer, a first electrode, and a second electrode; the transparent substrate has a first surface, the first surface including an inner first area and an outer second area; the semiconductor light-emitting array includes a first conductive semiconductor layer, a light-emitting layer, and a second conductive semiconductor layer stacked on the first surface of the transparent substrate, covering the first area of ​​the first surface of the transparent substrate; one surface of the first conductive semiconductor layer includes an area covering the light-emitting layer and the second conductive semiconductor layer and a first electrode electrical connection area; the insulating dielectric layer covers at least the semiconductor light-emitting array and has a first opening and a second opening; the first electrode and the second electrode are electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer through the first opening and the second opening, respectively; the second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge, and the fourth edge of the semiconductor light-emitting array, respectively, defined as W1, W2, W3, and W4; the light-emitting diodes in a row closest to the longitudinal side of the mounting substrate have a third edge of the semiconductor light-emitting array parallel to and closest to the side of the mounting substrate compared to the other edges, and W1 is greater than W3. Wherein, W1+W3 and W2+W4 are between 10 and 50 microns. Preferably, W3 is less than or equal to 20 microns, or more preferably, less than or equal to 5 microns; and W1 is between 10 and 30 microns.

[0142] Alternatively, the LEDs in the row closest to the horizontal side of the mounting substrate have a third edge of the semiconductor light-emitting array parallel to and closest to the side of the mounting substrate compared to the other edges, and W2 is greater than W4. Preferably, W3 is less than or equal to 20 microns, or more preferably, less than or equal to 5 microns; and W1 is between 10 and 30 microns.

[0143] like Figure 20 As shown, the light emitting diode can be Figure 4 The light-emitting diode shown in the figure has its third and fourth edges close to the horizontal and vertical sides of the mounting substrate. By reducing the widths W3 and / or W4 of the second region on the first surface of the transparent substrate, light absorption or reflection loss of light reaching the second region on the first surface of the transparent substrate with widths W3 and W4 is reduced, thereby improving the brightness of light around the side surfaces of the third and fourth edges of the semiconductor light-emitting array and improving splicing issues.

[0144] Or as Figure 21 As shown, the light emitting diode may be the light emitting diode of embodiment 2. The third edge and the fourth edge of the semiconductor light emitting array are close to the edge of the mounting substrate, and W1 is greater than W3, and W2 is greater than W4.

[0145] Or as Figure 22As shown, the light emitting diodes on the mounting substrate 30 have different Figure 4 The structure of the light emitting diode shown in FIG. The structure of the light emitting diode can refer to Figures 23-24 , including: a transparent substrate 100, a semiconductor light emitting array (102~104), an insulating dielectric layer 106, a first electrode 107 and a second electrode 108, and second regions with different widths around the four edges of the semiconductor light emitting array on the first surface side of the transparent substrate 100. The semiconductor light emitting array has first, second, third and fourth edges in a circumferential direction, and the second regions exposed around the first surface of the transparent substrate 100 from the first to the fourth edges have different widths of W1, W2, W3 and W4, the width of W1+W3 is 10~50 microns, and the width of W2+W4 is 10~50 microns, wherein W1 is greater than W3 or further W2 is greater than W4. Different from Figure 4 The illustrated light-emitting diode features a first electrode electrical connection region exposed by the first conductive type semiconductor layer 102, formed by exposing a portion of the first conductive type semiconductor layer 102 through an opening in the surface of the second conductive type semiconductor layer 104. The first electrode electrical connection region and the first and second edges of the semiconductor light-emitting array are not necessarily positioned in a specific manner. An insulating dielectric layer 106 covers the inner sidewalls of the opening and has a first opening that exposes the surface of the first conductive type semiconductor layer 102 at the bottom of the opening. A first electrode 107 contacts the first conductive type semiconductor layer 102 through the first opening in the insulating dielectric layer 106.

[0146] To solve the problem of dark lines on RGB display screens, an alternative implementation method is provided, such as Figures 19-22 Each module shown is an RGB module for a display screen, including a mounting substrate 30 and at least three columns of LEDs mounted on the mounting substrate 30; the at least three columns of LEDs include at least one column of red LEDs R, one column of green LEDs G, and one column of blue LEDs B. The red LEDs, green LEDs, and blue LEDs are all flip-chip LEDs. At the same time, every three three-color LEDs are adjacent, and the three-color light can be mixed to form white light, forming a pixel.

[0147] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention. Such modifications and variations shall fall within the scope defined by the appended claims.

Claims

1. A light emitting diode, comprising: A transparent substrate, a semiconductor light emitting array, an insulating dielectric layer, a first electrode and a second electrode; A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area; A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate; A surface of the first conductive type semiconductor layer includes: a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region; an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening; A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively; When viewed from the second conductive type semiconductor layer, the periphery of the semiconductor light emitting array includes a first edge, a second edge, a third edge and a fourth edge in sequence along a circumferential direction; The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4; It is characterized in that the first electrode electrical connection area of ​​the first conductive semiconductor layer is located at a portion of the first edge and a portion of the second edge, W3 is between 0 and 20 microns or W4 is between 0 and 20 microns; W2 is greater than W4.

2. A light emitting diode according to claim 1, characterized in that: The W1+W3 is 10-50 microns.

3. The light emitting diode according to claim 1, wherein: The side length of the first edge of the semiconductor light emitting array is greater than or equal to the side length of the second edge.

4. A light emitting diode according to claim 1 or 3, characterized in that: The W1 is 10 to 30 microns.

5. A light emitting diode according to claim 1 or 3, characterized in that: The W1:W3 is (2~40):

1.

6. The light emitting diode according to claim 1, characterized in that: The first electrode electrical connection region of the first conductive type semiconductor layer is not located at the third edge and the fourth edge, and W1 is greater than W3.

7. The light emitting diode according to claim 1, characterized in that: The W2 is 10 to 30 microns.

8. The light emitting diode according to claim 4, characterized in that: The W4 is between 0 and 5 or 5 and 20 microns.

9. The light emitting diode according to claim 1, characterized in that: The W2:W4 is (2~40):

1.

10. A light emitting diode comprising: A transparent substrate, a semiconductor light emitting array, an insulating dielectric layer, a first electrode and a second electrode; A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area; A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate; A surface of the first conductive type semiconductor layer includes a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region; an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening; A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively; When viewed from the second conductive type semiconductor layer, the periphery of the semiconductor light emitting array includes a first edge, a second edge, a third edge and a fourth edge in sequence along a circumferential direction; The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4; It is characterized in that the first electrode electrical connection area of ​​the first conductive semiconductor layer is located at part of the first edge, the entire second edge and part of the third edge; W3 is between 0 and 20 microns or W4 is between 0 and 20 microns, and W2 is greater than W4.

11. The light emitting diode according to claim 10, characterized in that: W1 is greater than or equal to W3.

12. The light emitting diode according to claim 10, characterized in that: The side length of the first edge of the semiconductor light emitting sequence is greater than or equal to the side length of the second edge.

13. The light emitting diode according to claim 10, characterized in that: The W2 is 10 to 30 microns.

14. The light emitting diode according to claim 12, characterized in that: The W4 is between 0 and 5 or 5 and 20 microns.

15. The light emitting diode according to claim 10, characterized in that: The W2:W4 is (2~40):

1.

16. The light emitting diode according to claim 10, characterized in that: The W1 is 10 to 30 microns.

17. A light emitting diode according to claim 1 or 10, characterized in that: The ratio of the first region of the first surface of the transparent substrate to the horizontal cross-sectional area of ​​the first surface of the transparent substrate is 40% to 90%.

18. A light emitting diode according to claim 1 or 10, characterized in that: The side length of the edge of the first surface of the transparent substrate is between 200 and 300 micrometers, 100 and 200 micrometers, or 40 and 100 micrometers.

19. A light emitting diode according to claim 1 or 10, characterized in that: The transparent substrate comprises a second surface opposite to the first surface, and the second surface is a main light emitting surface.

20. The light emitting diode according to claim 1 or 10, characterized in that: The insulating dielectric layer is a single-layer insulating dielectric layer, and the thickness of the single-layer insulating dielectric layer is more than 1 micron.

21. A light emitting diode according to claim 1 or 10, characterized in that: The thickness of the insulating dielectric layer covering the top surface of the semiconductor light-emitting array is different from the thickness of the insulating dielectric layer covering the sidewalls of the semiconductor light-emitting array.

22. A light emitting diode according to claim 1 or 10, characterized in that: The thickness of the insulating dielectric layer covering the sidewalls of the semiconductor light-emitting array is 40-90% of the thickness of the insulating dielectric layer covering the top surface of the semiconductor light-emitting array.

23. A light emitting diode according to claim 1 or 10, characterized in that: The insulating dielectric layer covers at least a portion of the second area of ​​the first surface of the transparent substrate.

24. A light emitting diode comprising: A transparent substrate, a semiconductor light emitting array, an insulating dielectric layer, a first electrode and a second electrode; A transparent substrate having a first surface, wherein the first surface includes an inner first area and a peripheral second area; A semiconductor light emitting sequence, comprising a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked on a first surface of a transparent substrate, covering a first area of ​​the first surface of the transparent substrate; A surface of the first conductive type semiconductor layer includes a light emitting layer and a second conductive type semiconductor layer covering region and a first electrode electrical connection region; an insulating dielectric layer, covering at least the semiconductor light emitting array and having a first opening and a second opening; A first electrode and a second electrode are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer through the first opening and the second opening respectively; When viewed from above the second conductive semiconductor layer, the periphery of the semiconductor light emitting array includes a first edge, a second edge, a third edge, and a fourth edge in a circumferential direction. The horizontal cross-sectional area of ​​the first surface of the transparent substrate is less than 90,000 square micrometers. The ratio of the first region of the first surface of the transparent substrate to the horizontal cross-sectional area of ​​the first surface of the transparent substrate is 40% to 90%. The second area of ​​the first surface of the transparent substrate has four widths around the first edge, the second edge, the third edge and the fourth edge of the semiconductor light emitting array, respectively, defined as W1, W2, W3 and W4; It is characterized in that the first electrode electrical connection area of ​​the first conductive semiconductor layer is located at a portion of the first edge and a portion of the second edge, W3 is between 0 and 20 microns or W4 is between 0 and 20 microns; W2 is greater than W4.

25. The light emitting diode according to claim 24, characterized in that: The W1+W3 is 10-50 microns.

26. The light emitting diode according to claim 24, characterized in that: The side length of the first edge of the semiconductor light emitting array is greater than or equal to the side length of the second edge.

27. The light emitting diode according to claim 24, characterized in that: The W1 is 10 to 30 microns.

28. The light emitting diode according to claim 24, characterized in that: The W1:W3 is (2~40):

1.

29. The light emitting diode according to claim 24, characterized in that: The first electrode electrical connection region of the first conductive type semiconductor layer is not located at the third edge and the fourth edge, and W1 is greater than W3.

30. The light emitting diode according to claim 24, characterized in that: The W2 is 10 to 30 microns.

31. The light emitting diode according to claim 24, characterized in that: The W4 is between 0 and 5 or 5 and 20 microns.

32. The light emitting diode according to claim 24, characterized in that: The W2:W4 is (2~40):

1.

33. A light emitting diode module comprising a mounting substrate and a plurality of rows and columns of light emitting diodes mounted on the mounting substrate, characterized in that: At least one or more or all of the light emitting diodes are the light emitting diodes according to any one of claims 1 to 32.

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