Calculation Method, Regulation Method and Device for Electric Field Distribution under Irregular Voltage Excitation

Abstract

The present application provides a calculation method, a regulation method and a device for the electric field distribution under irregular voltage excitation. The calculation method includes: decomposing the irregular excitation voltage by Fourier transform to obtain a plurality of superimposed frequency-domain voltages; determining the test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component to be measured according to the frequency-domain voltages, and further obtaining the broadband dielectric spectrum line of the packaging material of the electronic component to be measured; fitting the broadband dielectric spectrum line to obtain the frequency-variable dielectric parameter relationship; calculating the electric field distribution under each frequency-domain voltage according to the frequency-variable dielectric parameter relationship and superimposing them, and performing inverse Fourier transform on the superimposed electric field distribution to obtain the electric field distribution and the corresponding maximum field strength of the electronic component to be measured under the time-domain irregular voltage excitation. The present application provides guidance for the accurate evaluation of the electric field distribution and the field strength uniformity in electrical equipment under irregular voltage excitation, and can be applied to fields such as the state evaluation of high-voltage equipment under complex excitation.

Description

Technical Field

[0001] The present application relates to the field of electric field calculation and its regulation, and particularly to a method for calculating the electric field distribution under irregular voltage excitation, a regulation method and a device. Background Art

[0002] Electrical equipment usually operates under complex voltage excitation. Accurately evaluating the generated electric field distribution is crucial for the safe operation of electrical equipment. Especially for the positions where the electric field intensity is concentrated in electrical equipment under complex voltage excitation, it is necessary to further uniform the electric field intensity and regulate the electric field to prevent partial discharge.

[0003] Existing commercial software such as COMSOL, etc., usually performs the simulation of the electric field distribution of electrical equipment under AC and DC voltages by inputting a single material dielectric constant and conductivity parameter. However, in actual operation, electrical equipment mostly operates under complex voltage excitation. Only using a single dielectric constant and conductivity parameter cannot effectively evaluate the electric field distribution inside electrical equipment. In addition, existing research generally uses linear or non-linear dielectric or conductive characteristic materials to roughly uniform the electric field distribution, without truly grasping the relationship between the material dielectric parameters and the electric field distribution under complex voltage excitation, and has not achieved effective regulation of the electric field distribution in electrical equipment targeted. Summary of the Invention

[0004] In view of the above, it is necessary to propose a method for calculating the electric field distribution under irregular voltage excitation, a regulation method and a device, so as to solve the technical problem of how to calculate and targetedly regulate the electric field distribution in electrical equipment.

[0005] The present application provides a method for calculating the electric field distribution under irregular voltage excitation, and the calculation method includes:

[0006] Decompose the irregular excitation voltage by Fourier transform to obtain a plurality of superimposed frequency-domain voltages;

[0007] Determine the test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component to be measured according to the frequency-domain voltage, and calculate the broadband dielectric spectrum line of the packaging material of the electronic component to be measured at the preset test temperature based on the test frequency range;

[0008] Fit the broadband dielectric spectrum line of the packaging material of the electronic component to be measured to obtain the frequency-varying dielectric parameter relationship between the test frequency and the dielectric parameters of the packaging material of the electronic component to be measured at the preset test temperature;

[0009] Calculate the electric field distribution of the electronic component under test at each frequency-domain voltage according to the frequency-variable dielectric parameter relationship, superimpose the obtained electric field distributions at each frequency-domain voltage, and perform an inverse Fourier transform on the superimposed electric field distribution to obtain the electric field distribution of the electronic component under test under the time-domain irregular voltage excitation and the corresponding maximum field strength.

[0010] In some embodiments, the irregular excitation voltage is a PWM pulse square wave with a triangular wave of 10 kHz as the carrier, a sine wave of 50 Hz as the modulation wave, and an amplitude of 10 kV.

[0011] In some embodiments, the packaging material of the electronic component under test includes at least one of silicone gel, alumina ceramic substrate, beryllium oxide ceramic substrate, aluminum nitride ceramic substrate, and boron nitride ceramic substrate.

[0012] In some embodiments, the test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component under test obtained according to the frequency-domain voltage is 10 1 Hz - 10 6 Hz.

[0013] In some embodiments, the broadband dielectric spectrum line of the packaging material of the electronic component under test is fitted using a conductance model, a universal relaxation model, a Debye model, a Cole-Cole model, a Davidson-Cole model, a Havriliak-Negami model, a Dissado-Hill model, or a high-frequency dielectric constant model.

[0014] The present application also provides a method for regulating the electric field distribution under irregular voltage excitation, and the regulation method includes:

[0015] Changing the dielectric parameters of the packaging material of the electronic component under test to adjust the broadband dielectric spectrum line of the packaging material of the electronic component under test, and calculating the electric field distribution of the electronic component under test and the corresponding maximum field strength at different dielectric parameters using the calculation method of the electric field distribution under the irregular voltage excitation;

[0016] Calculating the correlation between the dielectric parameters of the packaging material of the electronic component under test within the test frequency range and the change trend of the maximum field strength, and obtaining the test frequency band with the strongest correlation between the dielectric parameters of the packaging material of the electronic component under test and the change trend of the maximum field strength;

[0017] According to the physical meaning of the dielectric parameter relaxation of the packaging material of the electronic component under test within the test frequency band, adjusting the dielectric parameters of the packaging material of the electronic component under test within the test frequency band to specifically regulate the electric field distribution under the irregular voltage excitation.

[0018] In some embodiments, the correlation between the dielectric parameters of the packaging material of the electronic component to be tested and the variation trend of the maximum field strength within the test frequency range is determined by calculating the GRD coefficient. The mathematical expression of the GRD coefficient is:

[0019]

[0020] In the formula: ρ = 0.5; δ i represents the GRD coefficient; x0 represents the maximum field strength; x i represents the dielectric parameters and direct current conductance at different frequencies, and i corresponds to the frequency; x i (k) represents the dielectric parameters at different frequencies and different temperatures, and k is the corresponding temperature.

[0021] The present application also provides an electronic device, which includes:

[0022] a memory storing computer-readable instructions; and

[0023] a processor that executes the computer-readable instructions stored in the memory to implement the calculation method of the electric field distribution under irregular voltage excitation and the regulation method of the electric field distribution under irregular voltage excitation.

[0024] The present application also provides a computer-readable storage medium, on which computer-readable instructions are stored. When the computer-readable instructions are executed by a processor, the calculation method of the electric field distribution under irregular voltage excitation and the regulation method of the electric field distribution under irregular voltage excitation are implemented.

[0025] The present application combines the broadband dielectric spectrum of the packaging material of the electronic component to be tested, and uses Fourier transform and inverse Fourier transform to realize the mutual conversion of the irregular excitation voltage between time domain - frequency domain - time domain, so as to calculate the electric field distribution of the electronic component to be tested under irregular voltage excitation; at the same time, by introducing the GRD coefficient to analyze the correlation between the dielectric parameters of the packaging material of the electronic component to be tested and the variation trend of the electric field strength, a targeted electric field regulation strategy is proposed to realize the targeted regulation of the maximum field strength. The present invention provides guidance for the accurate evaluation of the electric field distribution and field strength uniformity in electrical equipment under irregular voltage excitation, and can be applied to fields such as the state evaluation of high-voltage equipment under complex excitation. Description of the Drawings

[0026] Figure 1 is a flowchart of a preferred embodiment of the calculation method of the electric field distribution under irregular voltage excitation involved in the present application.

[0027] Figure 2 is a schematic diagram of the irregular excitation voltage within the time domain of 0 - 0.01 s and within the time domain of 0.01 - 0.02 s respectively involved in the present application.

[0028] Figure 3 It is a schematic diagram of the superposition of multiple frequency-domain voltages obtained by decomposing the irregular excitation voltage involved in the present application through Fourier transform.

[0029] Figure 4 It is a curve graph showing the variation of the real part and the imaginary part of the complex dielectric constant of the silicone gel involved in the present application with frequency at 150 °C.

[0030] Figure 5 It is a curve graph showing the variation of the real part and the imaginary part of the complex dielectric constant of the alumina ceramic substrate involved in the present application with frequency at 150 °C.

[0031] Figure 6 It is a graph of the relationship between frequency-varying dielectric parameters obtained by fitting the broadband dielectric spectrum of the silicone gel using multiple fitting models involved in the present application.

[0032] Figure 7 It is an electric field distribution diagram of the high potential and the low potential at the three-point junction of the copper foil, the ceramic substrate, and the silicone gel under the action of a PWM pulse square wave involved in the present application.

[0033] Figure 8 It is a flowchart of a preferred embodiment of a method for regulating the electric field distribution under an irregular voltage excitation involved in the present application.

[0034] Figure 9 It is a curve graph showing the variation of the real part and the imaginary part of the complex dielectric constant of the silicone gel involved in the present application with frequency at 150 - 250 °C.

[0035] Figure 10 It is a curve graph showing the variation of the real part and the imaginary part of the complex dielectric constant of the alumina ceramic substrate involved in the present application with frequency at 150 - 250 °C.

[0036] Figure 11 It is a curve graph showing the variation of the maximum electric field strength with the test temperature involved in the present application.

[0037] Figure 12 It is a curve graph of the change of the GRD coefficient used to characterize the correlation between the dielectric parameters of the packaging material of the electronic component to be tested and the change trend of the maximum field strength involved in the present application.

[0038] Figure 13 It is a schematic structural diagram of an electronic device of a preferred embodiment of a calculation method and a regulation method for electric field distribution under an irregular voltage excitation involved in the present application. Detailed implementation manners

[0039] To better understand the objectives, features, and advantages of the present application, the present application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, without conflict, the embodiments of the present application and the features in the embodiments may be combined with each other. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. The described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more, unless otherwise specifically defined.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the description of the present application in this specification are for the purpose of describing specific embodiments only and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the associated listed items.

[0042] The embodiments of the present application provide a method for calculating and regulating the electric field distribution under irregular voltage excitation, which can be applied to one or more electronic devices. An electronic device is a device that can automatically perform numerical calculations and / or information processing according to pre-set or stored instructions. Its hardware includes, but is not limited to, a microprocessor, an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), an embedded device, etc.

[0043] An electronic device can be any electronic product that can perform human-computer interaction with a customer. For example, a personal computer, a tablet computer, a smart phone, a personal digital assistant (PDA), a game console, an Internet Protocol Television (IPTV), a smart wearable device, etc.

[0044] The electronic device may also include a network device and / or a client device. Among them, the network device includes, but is not limited to, a single network server, a server group composed of multiple network servers, or a cloud composed of a large number of hosts or network servers based on cloud computing (Cloud Computing).

[0045] The network where the electronic device is located includes, but is not limited to, the Internet, wide area network, metropolitan area network, local area network, virtual private network (Virtual Private Network, VPN), etc.

[0046] As Figure 1 shown, it is a flowchart of a preferred embodiment of a method for calculating the electric field distribution under an irregular voltage excitation provided by this application. According to different requirements, the order of steps in this flowchart can be changed, and some steps can be omitted.

[0047] S10, perform Fourier transform on the irregular excitation voltage to obtain a plurality of superimposed frequency-domain voltages.

[0048] In an alternative embodiment, the irregular excitation voltage is a PWM pulse square wave with a 10 kHz triangular wave as the carrier, a 50 Hz sine wave as the modulation wave, and an amplitude of 10 kV. Using Fourier transform, the irregular excitation voltage in the time domain is decomposed into the superposition of a plurality of frequency-domain voltages, as specifically shown in Figure 2 and Figure 3 shown. Among them, Figure 2 is a schematic diagram of the irregular excitation voltage in the time domain within 0 - 0.01 s and within 0.01 - 0.02 s respectively. Figure 3 is a schematic diagram of the superposition of a plurality of frequency-domain voltages obtained after the irregular voltage excitation voltage is decomposed by Fourier transform.

[0049] In this way, by using Fourier transform to decompose the PWM pulse square wave signal in the time domain into the superposition of a plurality of frequency-domain PWM pulse square wave signals, a group of time-varying time-domain sine signals are represented as a group of discrete points in the frequency domain. The abscissa of each discrete point in the frequency domain represents a harmonic frequency, and its ordinate represents the vibration amplitude corresponding to the harmonic of that frequency, and the curve relationship between the amplitude of the PWM pulse square wave signal and the test frequency can be seen more intuitively.

[0050] S11, determine the test frequency range of the broadband dielectric spectrum of the electronic component packaging material to be tested according to the frequency-domain voltage, and calculate the broadband dielectric spectrum line of the electronic component packaging material to be tested at the preset test temperature based on the test frequency range.

[0051] In an optional embodiment, the electronic component to be measured refers to an electronic device power module, specifically, it can be the upper bridge arm of an inverter, etc. The encapsulation materials of the electronic device power module generally include silicone gel, alumina ceramic substrate, beryllium oxide ceramic substrate, aluminum nitride ceramic substrate, boron nitride ceramic substrate, etc. In this embodiment, the encapsulation materials of the electronic device power module are silicone gel and alumina ceramic substrate. The electronic device power module usually operates under irregular PWM pulse square waves, and the position where the field strength is most concentrated is the three-point junction of the copper foil, ceramic substrate, and silicone gel. Taking this as an example, this application elaborates on the calculation method and regulation method of the electric field distribution under irregular voltage excitation.

[0052] Further, it can be seen from Figure 3 that the test range of the broadband dielectric spectrum of the encapsulation material of the electronic component to be measured is 10 1 Hz - 10 6 Hz, that is, the test range of the broadband dielectric spectrum of silicone gel and alumina ceramic substrate is 10 1 Hz - 10 6 Hz. According to the usage requirements, the test temperature is set to 150 °C, and the broadband dielectric spectrum lines of silicone gel and alumina ceramic substrate at 150 °C can be measured respectively, as shown in Figure 4 and Figure 5 respectively. Among them, Figure 4 is the curve graph of the real part and imaginary part of the complex dielectric constant of the silicone gel involved in this application changing with frequency at 150 °C. Figure 5 is the curve graph of the real part and imaginary part of the complex dielectric constant of the alumina ceramic substrate involved in this application changing with frequency at 150 °C.

[0053] In this way, according to the abscissa of the frequency-domain voltage obtained by decomposition, the test frequency range of the broadband dielectric spectrum of the encapsulation material of the electronic component to be measured can be determined, and then the broadband dielectric spectrum line of the encapsulation material of the electronic component to be measured can be obtained. The broadband dielectric spectrum line of the encapsulation material of the electronic component to be measured is used to characterize the relationship between the dielectric parameters of the encapsulation material of the electronic component to be measured, the test frequency, and the test temperature. The dielectric parameters of the encapsulation material of the electronic component to be measured refer to the real part and imaginary part of the complex dielectric constant of the encapsulation material of the electronic component to be measured. It can be seen from the above figures that when the test temperature is constant, the dielectric parameters of the encapsulation material of the electronic component to be measured decrease with the increase of frequency.

[0054] S12. Fit the broadband dielectric spectrum line of the encapsulation material of the electronic component to be measured to obtain the frequency-varying dielectric parameter relationship between the test frequency and the dielectric parameters of the encapsulation material of the electronic component to be measured at the preset test temperature.

[0055] In an alternative embodiment, existing models such as the conductivity model, the universal relaxation model, the Debye model, the Cole-Cole model, the Davidson-Cole model, the Havriliak-Negami model, the Dissado-Hill model, and the high-frequency dielectric constant can be used to fit the broadband dielectric spectrum of the packaging material of the electronic component to be measured. Exemplarily, models such as the conductivity model, the universal relaxation model, the Cole-Cole model, and the high-frequency dielectric constant can be used to fit the broadband dielectric spectrum of the silicone gel to obtain a relationship diagram of the dielectric parameters of the silicone gel varying with the test frequency as shown in Figure 6 . Similarly, models such as the conductivity model, the Cole-Cole model, and the high-frequency dielectric constant can be used to fit the broadband dielectric spectrum of the alumina ceramic substrate to obtain a relationship diagram of the dielectric parameters of the alumina ceramic substrate varying with the test frequency (not shown).

[0056] In this way, by fitting the broadband dielectric spectra of the silicone gel and the alumina ceramic substrate with the above models, the relationships between the frequency-dependent dielectric parameters of the silicone gel and the alumina ceramic substrate and the test frequency can be obtained respectively.

[0057] S13. Calculate the electric field distribution of the electronic component to be measured at each frequency-domain voltage according to the relationship between the frequency-dependent dielectric parameters, and superimpose the obtained electric field distributions at each frequency-domain voltage. Perform an inverse Fourier transform on the superimposed electric field distribution to obtain the electric field distribution of the electronic component to be measured under the time-domain irregular voltage excitation and the corresponding maximum field strength.

[0058] Specifically, taking the upper arm of the inverter as an example, where ① is the collector copper foil, ② is the emitter copper foil, and ③ is the bottom plate copper foil. During operation, the collector copper foil is always at a high potential, the emitter copper foil bears the PWM pulse square wave, and the bottom plate copper foil is always at a low potential, thus obtaining the change in the electric field distribution at the three-point junction of the copper foil, the ceramic substrate, and the silicone gel under the action of the PWM pulse square wave as shown in Figure 7 . It can be seen from Figure 7 that the electric field strength at the three-point junction of the copper foil, the ceramic substrate, and the silicone gel is the largest when the PWM pulse square wave is at a low potential.

[0059] In this way, by calculating the electric field distribution of the electronic component to be measured at each frequency-domain voltage, superimposing the electric field distributions at each frequency-domain voltage based on the principle of linear superposition, and finally performing an inverse Fourier transform on the superimposed electric field distribution, the electric field distribution under the time-domain irregular voltage excitation is obtained, realizing the calculation of the electric field distribution under the irregular voltage excitation.

[0060] As shown in Figure 8 , the present application also provides a method for regulating the electric field distribution under irregular voltage excitation. The regulation method includes:

[0061] S10’, change the dielectric parameters of the packaging material of the electronic component to be measured to adjust the broadband dielectric spectrum of the packaging material of the electronic component to be measured, and calculate the electric field distribution of the electronic component to be measured and the corresponding maximum field strength at different dielectric parameters by using the calculation method of the electric field distribution under the irregular voltage excitation.

[0062] In an optional embodiment, by utilizing the characteristic that the dielectric parameters of the packaging material of the electronic component to be measured change with the test temperature, the broadband dielectric spectrum of the packaging material of the electronic component to be measured is changed by adjusting the preset test temperature. In this embodiment, the test temperature is set to 150 - 250 °C, and the broadband dielectric spectra of silicone gel and alumina ceramic substrate at 150 - 250 °C can be measured respectively, as Figure 9 and Figure 10 shown. Among them, Figure 9 is the curve graph of the real part and the imaginary part of the complex dielectric constant of silicone gel changing with frequency at 150 - 250 °C, Figure 10 is the curve graph of the real part and the imaginary part of the complex dielectric constant of alumina ceramic substrate changing with frequency at 150 - 250 °C.

[0063] Repeat steps S10 - S13, fit the broadband dielectric spectra corresponding to the packaging material of the electronic component to be measured at different test temperatures, obtain different frequency-varying dielectric parameter relationships, calculate the electric field distribution at each frequency-domain voltage according to these different frequency-varying dielectric parameter relationships, and then based on the principle of linear superposition, superimpose the electric field distributions at each frequency-domain voltage, and perform inverse Fourier transform on the superimposed electric field distribution, so as to obtain the electric field distribution of the electronic component to be measured and the corresponding maximum field strength at different dielectric parameters. Figure 11 is the curve relationship between the maximum electric field strength and the test temperature. It can be seen from Figure 11 that as the test temperature increases, the maximum field strength of the electric field also increases.

[0064] In this way, by utilizing the characteristic that the dielectric parameters of the packaging material of the electronic component to be measured change with the test temperature, the dielectric parameters of the packaging material of the electronic component to be measured are changed by adjusting the test temperature, so as to calculate the electric field distribution of the electronic component to be measured and the corresponding maximum field strength at different dielectric parameters.

[0065] S11’, calculate the correlation between the dielectric parameters of the packaging material of the electronic component to be measured and the change trend of the maximum field strength within the test frequency range, and obtain the test frequency band with the strongest correlation between the dielectric parameters of the packaging material of the electronic component to be measured and the change trend of the maximum field strength.

[0066] In an alternative embodiment, the grey relational degree method is adopted to describe the correlation between the dielectric parameters of the packaging material of the electronic component to be tested in each test frequency band and the change trend of the maximum field strength. This method can analyze the correlation between the two from the information of small samples.

[0067] In this alternative embodiment, the maximum field strength is set as x0, and the dielectric parameters and DC conductances at different frequencies are set as x i , where i corresponds to the frequency, and the dielectric parameters at different frequencies and different temperatures are x i (k), where k is the corresponding temperature. By calculating the GRD coefficient δ i to judge the correlation between the dielectric parameters of the packaging material of the electronic component to be tested in different test frequencies and the change trend of the maximum field strength, there is:

[0068]

[0069] where ρ = 0.5. The larger the GRD coefficient δ i , the closer the dielectric parameters of the packaging material of the electronic component to be tested in this test frequency band are to the maximum field strength.

[0070] The specific calculation results are as Figure 12 shown. It can be seen from Figure 12 that the maximum field strength has a strong correlation with the real part of the complex dielectric constant of the silicone gel and ceramic substrate in the frequency band from 10 2 Hz to 10 6 Hz and the imaginary part of the complex dielectric constant of the silicone gel at about 10 2 Hz.

[0071] In this way, the dielectric parameters required for the electric field simulation in each frequency domain are provided by using the broadband dielectric spectrum of the packaging material of the electronic component to be tested. By analyzing the correlation between the dielectric parameters of the material and the change trend of the electric field strength, the dielectric parameter test frequency band that is significantly correlated with the change trend of the maximum field strength is found.

[0072] S12’, according to the physical meaning of the dielectric parameter relaxation of the packaging material of the electronic component to be tested in the test frequency band, adjust the dielectric parameters of the packaging material of the electronic component to be tested in the test frequency band to specifically control the electric field distribution under irregular voltage excitation.

[0073] Exemplarily, according to Figure 12 it is already known that the maximum field strength has a strong correlation with the real part of the complex dielectric constant of the silicone gel and ceramic substrate in the frequency band from 10 2 Hz to 10 6 Hz and the imaginary part of the complex dielectric constant of the silicone gel at about 10 2 Hz, while in the range from 10 2 Hz to 10 6In the frequency band of 2 Hz, the real part of the complex dielectric constant of the silicone gel is mainly generated by the movement of Si-O chain segments; the imaginary part of the complex dielectric constant of the silicone gel at around 10 2 Hz is mainly determined by the low-frequency dispersion phenomenon. Based on this, the physical meaning of the dielectric parameter relaxation of the material of the electronic component to be measured in the test frequency band can be obtained as follows: in the frequency band from 10 6 Hz to 10 2 Hz, the influencing factor affecting the change of the real part of the complex dielectric constant of the silicone gel is mainly generated by the movement of Si-O chain segments; in the frequency band around 10

[0074] Hz, the influencing factor affecting the change of the imaginary part of the complex dielectric constant of the silicone gel is mainly determined by the low-frequency dispersion phenomenon. 2 Based on this, targeted means can be adopted. For example, regulation means such as increasing the crosslinking density can effectively inhibit the movement of Si-O bonds; or controlling the concentration of impurities in the raw materials and the preparation process, and regulating the transport of carriers in the low-frequency dispersion, etc., to adjust the dielectric parameters of the silicone gel in the frequency band from 10 6 Hz to 10 2 Hz or around the frequency of 10

[0075] Hz, so as to achieve targeted regulation of the maximum field strength.

[0076] Please refer to Figure 13 , which is a schematic structural diagram of an electronic device provided by an embodiment of the present application. The electronic device 1 includes a memory 12 and a processor 13. The memory 12 is used to store computer-readable instructions, and the processor 13 is used to execute the computer-readable instructions stored in the memory to implement the calculation method and regulation method of the electric field distribution under the irregular voltage excitation described in any of the above embodiments.

[0077] In an optional embodiment, the electronic device 1 further includes a bus and a computer program stored in the memory 12 and executable on the processor 13, such as a program for calculating and regulating the electric field distribution under irregular voltage excitation.

[0078] Figure 13 Only the electronic device 1 with the memory 12 and the processor 13 is shown. Those skilled in the art can understand that Figure 13 the shown structure does not limit the electronic device 1, and it may include fewer or more components than shown, or combine some components, or have different component arrangements.

[0079] Combined with Figure 1 , the memory 12 in the electronic device 1 stores a plurality of computer-readable instructions to implement a calculation method and a regulation method for the electric field distribution under irregular voltage excitation. The processor 13 can execute the plurality of instructions to implement:

[0080] Decompose the irregular excitation voltage by Fourier transform to obtain a plurality of superimposed frequency-domain voltages;

[0081] Determine the test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component to be tested according to the frequency-domain voltage, and calculate the broadband dielectric spectrum line of the packaging material of the electronic component to be tested at a preset test temperature based on the test frequency range;

[0082] Fit the broadband dielectric spectrum line of the packaging material of the electronic component to be tested to obtain the frequency-dependent dielectric parameter relationship between the test frequency and the dielectric parameters of the packaging material of the electronic component to be tested at a preset test temperature;

[0083] Calculate the electric field distribution of the electronic component to be tested under each frequency-domain voltage according to the frequency-dependent dielectric parameter relationship, superimpose the obtained electric field distributions under each frequency-domain voltage, and perform inverse Fourier transform on the superimposed electric field distribution to obtain the electric field distribution of the electronic component to be tested under the time-domain irregular voltage excitation and the corresponding maximum field strength. And:

[0084] Change the dielectric parameters of the packaging material of the electronic component to be tested to adjust the broadband dielectric spectrum line of the packaging material of the electronic component to be tested, and calculate the electric field distribution of the electronic component to be tested and the corresponding maximum field strength under different dielectric parameters by using the calculation method of the electric field distribution under irregular voltage excitation;

[0085] Calculate the correlation between the dielectric parameters of the packaging material of the electronic component to be tested and the change trend of the maximum field strength within the test frequency range, and obtain the test frequency band with the strongest correlation between the dielectric parameters of the packaging material of the electronic component to be tested and the change trend of the maximum field strength;

[0086] According to the physical meaning of the dielectric parameter relaxation of the packaging material of the electronic component to be tested within the test frequency band, adjust the dielectric parameters of the packaging material of the electronic component to be tested within the test frequency band to achieve targeted regulation of the electric field distribution under irregular voltage excitation.

[0087] Specifically, the specific implementation method of the processor 13 for the above instructions can refer to Figure 1 and Figure 8 the descriptions of the relevant steps in the corresponding embodiments, which will not be elaborated here.

[0088] Those skilled in the art can understand that the schematic diagram is only an example of the electronic device 1, which does not constitute a limitation on the electronic device 1. The electronic device 1 can be a bus structure or a star structure. The electronic device 1 can also include more or fewer other hardware or software than shown in the figure, or different component arrangements. For example, the electronic device 1 can also include input and output devices, network access devices, etc.

[0089] It should be noted that the electronic device 1 is only an example. Other existing or future possible electronic products that can be adapted to this application should also be included within the protection scope of this application and are hereby incorporated by reference.

[0090] Among them, the memory 12 includes at least one type of readable storage medium. The readable storage medium can be non-volatile or volatile. The readable storage medium includes flash memory, mobile hard disks, multimedia cards, card-type memories (such as SD or DX memories, etc.), magnetic memories, magnetic disks, optical disks, etc. The memory 12 can be an internal storage unit of the electronic device 1 in some embodiments, such as the mobile hard disk of the electronic device 1. The memory 12 can also be an external storage device of the electronic device 1 in other embodiments, such as a plug-in mobile hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. equipped on the electronic device 1. The memory 12 can not only be used to store application software installed in the electronic device 1 and various types of data, such as the code of the program for calculating and regulating the electric field distribution under irregular voltage excitation, etc., but also be used to temporarily store the data that has been output or will be output.

[0091] The processor 13 can be composed of integrated circuits in some embodiments. For example, it can be composed of a single packaged integrated circuit, or can be composed of multiple integrated circuits with the same or different functions packaged, including the combination of one or more Central Processing Units (CPUs), microprocessors, digital processing chips, graphics processors, and various control chips, etc. The processor 13 is the control core (Control Unit) of the electronic device 1, connecting various components of the entire electronic device 1 through various interfaces and lines, and by running or executing the programs or modules stored in the memory 12 (such as executing the program for calculating and regulating the electric field distribution under irregular voltage excitation, etc.), and calling the data stored in the memory 12, to perform various functions of the electronic device 1 and process data.

[0092] The processor 13 executes the operating system of the electronic device 1 and various installed application programs. The processor 13 executes the application programs to implement the steps in the embodiments of the above-mentioned calculation method and regulation method for the electric field distribution under various irregular voltage excitations, such as Figure 1 and Figure 8 the steps shown.

[0093] The computer program can be divided into one or more modules / units, and the one or more modules / units are stored in the memory 12 and executed by the processor 13 to complete the present application. The one or more modules / units can be a series of computer-readable instruction segments capable of performing specific functions, and these instruction segments are used to describe the execution process of the computer program in the electronic device 1.

[0094] The above-mentioned integrated units implemented in the form of software function modules can be stored in a computer-readable storage medium. The above-mentioned software function modules stored in a storage medium include several instructions for causing a computer device (which can be a personal computer, a computer device, or a network device, etc.) or a processor to execute part of the calculation method and regulation method for the electric field distribution under irregular voltage excitations described in the various embodiments of the present application.

[0095] If the modules / units integrated in the electronic device 1 are implemented in the form of software function units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, to implement all or part of the processes in the above-mentioned embodiment methods of the present application, it can also be completed by a computer program instructing relevant hardware devices. The computer program can be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the above-mentioned various method embodiments can be implemented.

[0096] Among them, the computer program includes computer program code, and the computer program code can be in the form of source code, object code, executable file, or some intermediate form, etc. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disc, computer memory, read-only memory (ROM, Read-Only Memory), random access memory, and other memories, etc.

[0097] Furthermore, the computer-readable storage medium mainly includes a storage program area and a storage data area. Among them, the storage program area can store the operating system, application programs required for at least one function, etc.; the storage data area can store data created according to the use of the blockchain node, etc.

[0098] The blockchain referred to in this application is a new application mode of computer technologies such as distributed data storage, peer-to-peer transmission, consensus mechanism, and encryption algorithms. A blockchain, in essence, is a decentralized database, a series of data blocks generated by using cryptographic methods. Each data block contains information about a batch of network transactions, which is used to verify the validity of the information (anti-counterfeiting) and generate the next block. The blockchain can include a blockchain underlying platform, a platform product service layer, an application service layer, etc.

[0099] The bus can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience in representation, in Figure 3 it is only represented by one arrow, but it does not mean that there is only one bus or one type of bus. The bus is arranged to realize the connection and communication between the memory 12 and at least one processor 13, etc.

[0100] The embodiments of this application also provide a computer-readable storage medium (not shown in the figure). Computer-readable instructions are stored in the computer-readable storage medium, and the computer-readable instructions are executed by a processor in an electronic device to implement the calculation method and regulation method of the electric field distribution under irregular voltage excitation described in any of the above embodiments.

[0101] In several embodiments provided by this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways.

[0102] The modules described as separate components may or may not be physically separated. The components shown as modules may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0103] In addition, in each embodiment of this application, the functional modules can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit. The above integrated unit can be implemented in the form of hardware, or in the form of a combination of hardware and software functional modules.

[0104] In addition, it is obvious that the term "including" does not exclude other units or steps, and the singular form does not exclude the plural form. A plurality of units or devices described in the specification can also be implemented by one unit or device through software or hardware. Terms such as first, second, etc. are used to denote names and do not denote any particular order.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application and not to limit them. Although the present application has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present application can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A calculation method for the electric field distribution under irregular voltage excitation, characterized in that The calculation method includes: Decompose the irregular excitation voltage by Fourier transform to obtain multiple superimposed frequency-domain voltages; Determine the test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component to be measured according to the frequency-domain voltage, and calculate the broadband dielectric spectrum line of the packaging material of the electronic component to be measured at the preset test temperature based on the test frequency range; Fit the broadband dielectric spectrum line of the packaging material of the electronic component to be measured to obtain the frequency-dependent dielectric parameter relationship between the test frequency and the dielectric parameters of the packaging material of the electronic component to be measured at the preset test temperature; Calculate the electric field distribution of the electronic component to be measured at each frequency-domain voltage according to the frequency-dependent dielectric parameter relationship, superimpose the obtained electric field distributions at each frequency-domain voltage, and perform inverse Fourier transform on the superimposed electric field distribution to obtain the electric field distribution and the corresponding maximum field strength of the electronic component to be measured under the time-domain irregular voltage excitation.

2. The calculation method of the electric field distribution under irregular voltage excitation according to claim 1, characterized in that, The irregular excitation voltage is a PWM pulse square wave with a triangular wave of 10 kHz as the carrier, a sine wave of 50 Hz as the modulation wave, and an amplitude of 10 kV.

3. The calculation method of the electric field distribution under irregular voltage excitation according to claim 1, wherein The packaging material of the electronic component to be measured includes at least one of silicone gel, alumina ceramic substrate, beryllium oxide ceramic substrate, aluminum nitride ceramic substrate, and boron nitride ceramic substrate.

4. The calculation method of the electric field distribution under irregular voltage excitation according to claim 1, characterized in that The test frequency range of the broadband dielectric spectrum of the packaging material of the electronic component to be measured obtained from the frequency-domain voltage is 10 1 Hz - 10 6 Hz.

5. The calculation method of the electric field distribution under irregular voltage excitation according to claim 1, characterized in that, Use the conductance model, universality relaxation model, Debye model, Cole-Cole model, Davidson-Cole model, Havriliak-Negami model, Dissado-Hill model, or high-frequency dielectric constant model to fit the broadband dielectric spectrum line of the packaging material of the electronic component to be measured.

6. A method for regulating the electric field distribution under irregular voltage excitation, characterized in that The regulation method includes: Change the dielectric parameters of the packaging material of the electronic component to be measured to adjust the broadband dielectric spectrum line of the packaging material of the electronic component to be measured, and calculate the electric field distribution and the corresponding maximum field strength of the electronic component to be measured under different dielectric parameters by using the calculation method of the electric field distribution under the irregular voltage excitation as described in any one of claims 1-5; Calculate the correlation between the dielectric parameters of the packaging material of the electronic component to be measured and the change trend of the maximum field strength within the test frequency range to obtain the test frequency band with the strongest correlation between the dielectric parameters of the packaging material of the electronic component to be measured and the change trend of the maximum field strength; According to the physical meaning of the dielectric parameter relaxation of the packaging material of the electronic component to be measured within the test frequency band, adjust the dielectric parameters of the packaging material of the electronic component to be measured within the test frequency band to specifically regulate the electric field distribution under the irregular voltage excitation.

7. The method for regulating the electric field distribution under irregular voltage excitation according to claim 6, characterized in that Judge the correlation between the dielectric parameters of the packaging material of the electronic component to be measured and the change trend of the maximum field strength within the test frequency range by calculating the GRD coefficient, and the mathematical expression of the GRD coefficient is: Where: ρ = 0.5; δ i represents the GRD coefficient; x0 represents the maximum field strength; x i represents the dielectric parameters and direct current conductance at different frequencies, where i corresponds to the frequency; x i (k) represents the dielectric parameters at different frequencies and different temperatures, where k is the corresponding temperature.

8. An electronic device, characterized in that, The electronic device includes: A memory storing computer-readable instructions; and A processor that executes the computer-readable instructions stored in the memory to implement the calculation method of the electric field distribution under the irregular voltage excitation as described in any one of claims 1 to 5 and the regulation method of the electric field distribution under the irregular voltage excitation as described in any one of claims 6 to 7.

9. A computer-readable storage medium, characterized in that, Computer-readable instructions are stored on the computer-readable storage medium, and when the computer-readable instructions are executed by a processor, the method for calculating the electric field distribution under irregular voltage excitation described in any one of claims 1 to 5 and the method for regulating the electric field distribution under irregular voltage excitation described in any one of claims 6 to 7 are implemented.

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