A high-current power device and its fabrication method, integrated circuit

Abstract

This invention belongs to the field of semiconductor technology and mainly provides a high-current power device, including: multiple fully controllable power devices, multiple compensation capacitor modules, and a capacitance measurement module. The first terminals and second terminals of the multiple fully controllable power devices are shared. Each compensation capacitor module corresponds one-to-one with a fully controllable power device, and each compensation capacitor module is located between the control terminal and the first terminal of the corresponding fully controllable power device. The capacitance measurement module measures the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device, and controls the capacitance value of the corresponding compensation capacitor module based on the parasitic capacitance to ensure that the capacitance between the first terminal and the control terminal of each fully controllable power device is equal. This allows the multiple fully controllable power devices to have matched switching speed characteristics when connected in parallel, avoiding problems such as excessive switching power consumption and inrush current that often occur with high-current power devices.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and particularly relates to a high-current power device and its fabrication method, as well as an integrated circuit. Background Technology

[0002] In the field of power electronics, high-current power devices are often used depending on the application scenario. However, considering the manufacturing cost, in practical applications, conventional power devices are often connected in parallel to form the high-current devices required by the user.

[0003] However, due to the inherent mismatch in switching speed characteristics during device manufacturing, the application of parallel power devices suffers from problems such as excessive switching power consumption and the tendency for inrush current. Summary of the Invention

[0004] The purpose of this invention is to provide a high-current power device and its fabrication method, as well as an integrated circuit, in order to solve problems such as excessive switching power consumption and the tendency for surge current to occur in the device.

[0005] A first aspect of this application provides a high-current power device, the high-current power device comprising:

[0006] Multiple fully controllable power devices, wherein the first terminals of the multiple fully controllable power devices are connected together, and the second terminals of the multiple fully controllable power devices are connected together;

[0007] Multiple compensation capacitor modules are provided, and each of the multiple compensation capacitor modules corresponds one-to-one with a multiple of the fully controllable power devices. Each compensation capacitor module is located between the control terminal and the first terminal of the corresponding fully controllable power device.

[0008] A capacitance measurement module is connected to multiple fully controllable power devices and multiple compensation capacitor modules. It is used to measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device, and control the capacitance value of the corresponding compensation capacitor module according to the parasitic capacitance, so that the capacitance between the first terminal and the control terminal of the fully controllable power device is equal.

[0009] In one embodiment, the compensation capacitor module consists of multiple compensation capacitors connected in parallel.

[0010] In one embodiment, a plurality of the compensation capacitors are respectively connected to the first terminal and the control terminal of the corresponding fully controlled power device via fuses.

[0011] In one embodiment, the capacitance values ​​of the plurality of compensation capacitors are in an arithmetic sequence.

[0012] In one embodiment, the capacitance values ​​of the plurality of compensation capacitors are in a geometric sequence.

[0013] In one embodiment, the capacitance values ​​of the plurality of compensation capacitors are C0, 2C0, 4C0, 8C0, ..., 2 n C0, where C0 is the reference capacitance value and n is the number of compensation capacitors.

[0014] In one embodiment, the fused wire is an anti-fuse wire.

[0015] In one embodiment, the fully controllable power device is any one of MOSFET, IGBT, or BJT.

[0016] A second aspect of this application provides a method for fabricating a high-current power device, comprising:

[0017] Multiple fully controllable power devices are fabricated on a substrate, wherein the first terminals of the multiple fully controllable power devices are connected in common, and the second terminals of the multiple fully controllable power devices are connected in common;

[0018] A compensation capacitor module is formed between the control terminal and the first terminal of each fully controllable power device;

[0019] The parasitic capacitance between the control terminal and the first terminal of each fully controllable power device is measured, and the capacitance value of the corresponding compensation capacitor module is controlled according to the parasitic capacitance so that the capacitance between the first terminal and the control terminal of the fully controllable power device is equal.

[0020] A third aspect of this application provides an integrated circuit, including: a high-current power device as described in any of the preceding claims.

[0021] This application provides a high-current power device, including: multiple fully controllable power devices, multiple compensation capacitor modules, and a capacitance measurement module. The first terminals of the multiple fully controllable power devices are shared, and the second terminals of the multiple fully controllable power devices are also shared. Each compensation capacitor module corresponds one-to-one with one of the multiple fully controllable power devices, and each compensation capacitor module is located between the control terminal and the first terminal of the corresponding fully controllable power device. The capacitance measurement module is connected to the multiple fully controllable power devices and the multiple compensation capacitor modules, and is used to measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device, and control the capacitance value of the corresponding compensation capacitor module based on the parasitic capacitance, so that the capacitance between the first terminal and the control terminal of the fully controllable power device is equal. This application sets up multiple capacitance measurement modules to compensate for the capacitance value between the first terminal and the control terminal of a fully controlled power device. The capacitance measurement modules measure the parasitic capacitance between the control terminal and the first terminal of each fully controlled power device, thereby controlling the capacitance value of the corresponding compensation capacitor module. This ensures that the capacitance between the first terminal and the control terminal of each fully controlled power device is equal, so that multiple fully controlled power devices have matched switching speed characteristics when connected in parallel. This avoids problems such as excessive switching power consumption and surge current in high-current power devices. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a high-current power device provided in one embodiment of this application;

[0023] Figure 2 This is a schematic diagram of the structure of a high-current power device provided in another embodiment of this application;

[0024] Figure 3 This is a schematic diagram of the structure of a high-current power device provided in another embodiment of this application;

[0025] Figure 4 This is a flowchart illustrating a method for fabricating a high-current power device according to an embodiment of this application. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0027] Note that, when used, the markings left, right, front, back, top, bottom, forward, backward, clockwise, and counterclockwise are used merely for convenience and do not imply any specific fixed direction. In fact, they are used to reflect the relative positions and / or orientations between different parts of an object.

[0028] As used herein, the terms "over," "under," "between," and "on" refer to the relative position of a layer with respect to other layers. Similarly, for example, a layer deposited or placed above or below another layer may be in direct contact with that layer or may have one or more intermediate layers. Furthermore, a layer deposited or placed between layers may be in direct contact with those layers or may have one or more intermediate layers. In contrast, a first layer "on" a second layer is in contact with that second layer. Additionally, the relative position of a layer with respect to other layers is provided (assuming that the deposition, modification, and removal of the film are performed relative to the starting substrate without considering the absolute orientation of the substrate).

[0029] In the field of power electronics, high current is often required. Due to manufacturing cost considerations, high current devices are often obtained by connecting devices in parallel. However, the inherent mismatch in switching speed characteristics during device manufacturing can cause problems such as excessive switching power consumption and inrush current.

[0030] In existing technologies, the above-mentioned technical problems are often solved by using drive circuit compensation or by connecting devices produced in the same batch (with similar characteristics) in parallel. However, connecting devices produced in the same batch in parallel also encounters some problems. For example, on the one hand, there may be errors in the production process of devices produced in the same batch, which will cause their characteristics to be inconsistent and thus affect the accuracy of the product. On the other hand, when the devices are damaged and need to be repaired or replaced in the later use, it is generally impossible to find parts produced in the same batch, which will reduce the accuracy of the product.

[0031] To address the aforementioned technical problems, this application proposes a high-current power device, referring to... Figure 1 As shown, the high-current power device includes: multiple fully controlled power devices 10, multiple compensation capacitor modules 20, and a capacitance measurement module 30.

[0032] Specifically, the first terminals of multiple fully controlled power devices 10 are connected together, and the second terminals of multiple fully controlled power devices 10 are also connected together; multiple compensation capacitor modules 20 correspond one-to-one with multiple fully controlled power devices 10, and each compensation capacitor module 20 is located between the control terminal and the first terminal of the corresponding fully controlled power device 10; the capacitance measurement module 30 is connected to the multiple fully controlled power devices 10 and the multiple compensation capacitor modules 20, and is used to measure the parasitic capacitance between the control terminal and the first terminal of each fully controlled power device 10, and control the capacitance value of the corresponding compensation capacitor module 20 according to the parasitic capacitance, so that the capacitance between the first terminal and the control terminal of the fully controlled power device 10 is equal.

[0033] In this embodiment, combined with Figure 1As shown, the first terminals of multiple fully controlled power devices 10 are connected together as the first terminal A of the high-current power device, the second terminals of multiple fully controlled power devices 10 are connected together as the second terminal B of the high-current power device, and the control terminals of multiple fully controlled power devices 10 are connected together as the control terminal C of the high-current power device. By connecting multiple fully controlled power devices 10 in parallel to form a high-current power device, the current carried by the power device can be increased, meeting the high-current requirements of the power electronics field.

[0034] In practical applications, multiple fully controlled power devices 10 connected in parallel can be fully controlled power devices produced in the same batch. Moreover, according to the application requirements of different application scenarios, different numbers of fully controlled power devices 10 can be connected in parallel sequentially. For example, there can be two, three, four, etc., fully controlled power devices 10 connected in parallel, so that the current passing through is different, in order to adapt to different application scenarios and meet the requirements of high current.

[0035] In specific application embodiments, even fully controlled power devices produced in the same batch may not have completely identical parasitic capacitances. If the parasitic capacitances of the fully controlled power devices are different, multiple fully controlled power devices 10 connected in parallel will have mismatched switching speed characteristics, which will cause problems such as excessive switching power consumption and surge current. In order to improve the matching of fully controlled power devices, multiple compensation capacitor modules 20 can be set to correspond one-to-one with multiple fully controlled power devices 10. Each compensation capacitor module 20 is located between the control terminal and the first terminal of the corresponding fully controlled power device 10.

[0036] It is understood that each fully controlled power device 10 is connected to a corresponding compensation capacitor module 20, and each compensation capacitor module 20 is connected in series between the control terminal and the first terminal of the corresponding fully controlled power device 10. By setting the compensation capacitor module 20 to compensate the capacitance between the control terminal and the first terminal of the fully controlled power device 10, the switching speed of the parallel fully controlled power devices 10 is matched, thereby avoiding problems such as excessive switching power consumption and surge current caused by the mismatch of the switching speed of the fully controlled power devices 10.

[0037] In this embodiment, the capacitance measurement module 30 is used to measure the parasitic capacitance between the control terminal and the first terminal of each fully controlled power device 10, and adjust the capacitance value of the corresponding compensation capacitor module 20 according to the parasitic capacitance between the control terminal and the first terminal of the fully controlled power device 10, so that the capacitance between the first terminal and the control terminal of the fully controlled power device 10 is equal.

[0038] Specifically, the capacitance measurement module 30 detects the parasitic capacitance between the first terminal and the control terminal of each fully controlled power device 10. Based on this parasitic capacitance, the capacitance value of the compensation capacitor module 20 is adjusted to compensate for the capacitance between the first terminal and the control terminal of the fully controlled power device 10. For example, if the parasitic capacitance between the control terminal and the first terminal of the first fully controlled power device 10 is C11, and the parasitic capacitance between the control terminal and the first terminal of the second fully controlled power device 10 is C21, then by setting the capacitance value of the compensation capacitor module 20 corresponding to the first fully controlled power device 10 to C12 and the capacitance value of the compensation capacitor module 20 corresponding to the second fully controlled power device 10 to C22, C11 + C12 = C21 + C22, the capacitance between the first terminal and the control terminal of the fully controlled power device 10 in the high-current power device is made equal, thereby reducing the problems of excessive switching power consumption and surge current caused by the switching speed characteristics of the fully controlled power device 10.

[0039] In a specific application embodiment, the capacitance measurement module 30 controls the capacitance value of the corresponding compensation capacitor module 20 according to the detected parasitic capacitance. It can be understood that the capacitance measurement module 30 can increase or decrease the capacitance value of the compensation capacitor module 20 according to the parasitic capacitance. The purpose is to make the capacitance between the first terminal and the control terminal of the fully controlled power device 10 equal, thereby reducing the problems of excessive switching power consumption and surge current caused by the switching speed characteristics of the fully controlled power device 10.

[0040] In one embodiment, the parasitic capacitance between the first terminal and the control terminal of the fully controlled power device 10 includes the parasitic capacitance generated by its winding.

[0041] In one specific application embodiment, the number of compensation capacitor modules 20 can be increased according to actual application requirements.

[0042] In a specific application embodiment, a compensation capacitor module 20 is also provided between the second terminal and the control terminal of the fully controlled power device 10. The capacitance measurement module 30 detects the parasitic capacitance between the second terminal and the control terminal of each fully controlled power device 10, and adjusts the capacitance value of the corresponding compensation capacitor module 20 based on the parasitic capacitance, so that the capacitance between the second terminal and the control terminal of each fully controlled power device 10 in the high current power device is equal.

[0043] In one embodiment, reference Figure 2 As shown, the compensation capacitor module 20 consists of multiple compensation capacitors connected in parallel.

[0044] Specifically, the compensation capacitor module 20 can set up multiple compensation capacitors in parallel according to the parasitic capacitance measured by the capacitance measurement module 30. The capacitance measurement module 30 measures the parasitic capacitance between the control terminal and the first terminal of each fully controlled power device 10, and determines the number of the multiple compensation capacitors in the compensation capacitor module 20 connected to the fully controlled power device based on the detected parasitic capacitance.

[0045] In some embodiments, the capacitance values ​​of the compensation capacitors in the compensation capacitor module 20 may be the same or different. By controlling the number of compensation capacitors connected between the control terminal and the first terminal of the fully controlled power device 10, the capacitance between the first terminal and the control terminal of each fully controlled power device 10 can be adjusted, so as to achieve the purpose of equal capacitance between the first terminal and the control terminal of the parallel fully controlled power devices 10, thereby reducing the problems of excessive switching power consumption and surge current caused by the switching speed characteristics of the fully controlled power device 10.

[0046] In one embodiment, multiple compensation capacitors are connected to the first terminal and control terminal of the corresponding fully controllable power device 10 via fuses. Specifically, the fuses can be melted by laser. The capacitance measurement module 30 pre-obtains the capacitance value of each compensation capacitor and determines the number of compensation capacitors connected between the first terminal and control terminal of the fully controllable power device 10 based on the parasitic capacitance between the first terminal and control terminal.

[0047] In one embodiment, the fused wire is an anti-fuse wire.

[0048] Specifically, an antifuse is a component used in the gate array of an integrated circuit to connect to each transistor. Specifically, an antifuse is connected to both the first terminal and the control terminal of the corresponding fully controllable power device 10. Its function is to program the compensation capacitor and the fully controllable power device 10. The antifuse has a metal-dielectric-metal layer structure, and includes a protective layer formed between the dielectric and metal layers to protect the dielectric layer from damage by subsequent etching processes. Programming the gate array using antifuse involves applying a high voltage to the antifuse, causing the dielectric layer to break down, thus turning the antifuse "on". Conversely, when no voltage is applied, the antifuse is "off". Therefore, programming using antifuse allows for the application of voltage or no voltage to each antifuse, thus controlling its "on" or "off" state and achieving the purpose of programming the gate array.

[0049] In one specific application embodiment, a reverse-current fuse is connected in series across the two ends of a compensation capacitor and then connected to the first end and control end of the corresponding fully controllable power device 10, respectively. When different demands are met, the corresponding reverse-current fuse is controlled to turn on or off by applying voltage, which expands the application scenarios and scope of high-power devices and reduces resource waste.

[0050] In one embodiment, the capacitance measurement module 30 calculates the capacitance value that needs to be compensated for each fully controlled power device 10. For example, if the parasitic capacitance between the first terminal and the control terminal of one of the high-current power devices is the largest, then the fully controlled power device 10 does not need to be compensated, or the minimum compensation is set, and the capacitance between the first terminal and the control terminal of the fully controlled power device 10 is used as the reference capacitance. By adjusting the capacitance value of the compensation capacitor module 20 corresponding to other fully controlled power devices 10, the capacitance between the first terminal and the control terminal of the other fully controlled power devices 10 is made equal to the reference capacitance.

[0051] In one embodiment, the capacitance values ​​of the multiple compensation capacitors are arranged in an arithmetic sequence.

[0052] In this embodiment, the capacitance measurement module 30 can measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device 10. When the parasitic capacitance between the control terminal and the first terminal of the fully controllable power device 10 is not equal and may affect the switching speed, the capacitance of the first terminal and the control terminal of the fully controllable power device 10 is compensated by the compensation capacitor module 20. The capacitance values ​​of the multiple compensation capacitors in the compensation capacitor module 20 can be set to form an arithmetic sequence. For example, the capacitance values ​​of the multiple compensation capacitors are C0, 2C0, 3C0, 4C0, ..., nC0, where C0 is the reference capacitance value and n is the number of compensation capacitors. Alternatively, multiple compensation capacitors can be set with capacitance values ​​of C0, 2C0, 4C0, 6C0, ..., 2nC0, where C0 is the reference capacitance value and n is the number of compensation capacitors. By setting the capacitance values ​​of the compensation capacitors to form an arithmetic sequence, the parasitic capacitance between the control terminal and the first terminal of the fully controlled power device 10 can be compensated, so that the capacitance of the first terminal and the control terminal of the fully controlled power device 10 are equal, thereby avoiding problems such as excessive switching power consumption and surge current caused by the switching speed characteristics of the fully controlled power device 10.

[0053] In one embodiment, the capacitance values ​​of the multiple compensation capacitors are in a geometric sequence.

[0054] In one embodiment, the capacitance values ​​of the plurality of compensation capacitors are C0, 2C0, 4C0, 8C0, ..., 2 n C0, where C0 is the reference capacitance value and n is the number of compensation capacitors.

[0055] In this embodiment, the capacitance measurement module 30 can measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device 10. When the parasitic capacitance between the control terminal and the first terminal of the fully controllable power device 10 is unequal and may affect the switching speed, the capacitance of the first terminal and the control terminal of the fully controllable power device 10 is compensated by the compensation capacitor module 20. The capacitance values ​​of the multiple compensation capacitors in the compensation capacitor module 20 can be set to form a geometric sequence. For example, the capacitance values ​​of the multiple compensation capacitors are C0, 2C0, 4C0, 8C0, ..., 2C0. n C0, where C0 is the reference capacitance value and n is the number of compensation capacitors. Alternatively, multiple compensation capacitors can be set with capacitance values ​​of C0, 3C0, 9C0, 27C0, ..., 3... n C0, by setting the capacitance value of the compensation capacitor to be in a geometric sequence, can compensate for the parasitic capacitance between the control terminal and the first terminal of the fully controlled power device 10, so that the capacitance of the first terminal and the control terminal of the fully controlled power device 10 are equal, thereby avoiding problems such as excessive switching power consumption and surge current caused by the switching speed characteristics of the fully controlled power device 10.

[0056] In one embodiment, the fully controllable power device 10 is any one of IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), or BJT (Bipolar Junction Transistor).

[0057] For example, refer to Figure 2 As shown, when the fully controllable power device 10 is a MOSFET, multiple compensation capacitor modules 20 correspond one-to-one with multiple MOSFETs. The gate of the MOSFET serves as the control terminal of the fully controllable power device 10, the source of the MOSFET serves as the first terminal of the fully controllable power device 10, and the drain of the MOSFET serves as the second terminal of the fully controllable power device 10. The compensation capacitor module 20 is located between the gate and source of the corresponding MOSFET.

[0058] When the fully controllable power device 10 is an IBGT, multiple compensation capacitor modules 20 correspond one-to-one with multiple IBGTs. The gate of the IBGT serves as the control terminal of the fully controllable power device 10, the source of the IBGT serves as the first terminal of the fully controllable power device 10, and the drain of the IBGT serves as the second terminal of the fully controllable power device 10. The compensation capacitor module 20 is located between the gate and source of the corresponding IBGT.

[0059] When the fully controlled power device 10 is a BJT, multiple compensation capacitor modules 20 correspond one-to-one with multiple BJTs. The base of the BJT serves as the control terminal of the fully controlled power device 10, the collector of the BJT serves as the first terminal of the fully controlled power device 10, and the emitter of the MOSFET serves as the second terminal of the fully controlled power device 10. The compensation capacitor module 20 is located between the base and emitter of the corresponding MOSFET.

[0060] In one embodiment, reference Figure 2 As shown, a high-current power device includes two controllable power devices, namely a first switch Q1 and a second switch Q2. The first terminal of the first switch Q1 and the first terminal of the second switch Q2 are connected together, and the second terminal of the first switch Q1 and the second terminal of the second switch Q2 are also connected together. The compensation capacitor module 20 includes a first capacitor C1 and a second capacitor C2. The first terminal of the first capacitor C1 is connected to the control terminal of the first switch Q1, and the second terminal of the first capacitor C1 is connected to the first terminal of the first switch Q1. The first terminal of the second capacitor C2 is connected to the control terminal of the second switch Q2, and the second terminal of the second capacitor C2 is connected to the second terminal of the second switch Q2.

[0061] In some embodiments, the first switch Q1 and the second switch Q2 can be any one of IGBT, MOSFET and BJT.

[0062] In one embodiment, reference Figure 3 As shown, the compensation capacitor module 20 consists of multiple compensation capacitors connected in parallel.

[0063] Specifically, a high-current power device includes a controlled power device, namely a third switch Q3, and a compensation capacitor module 20 includes a third capacitor C3, a fourth capacitor C4, and a fifth capacitor C5. The first terminals of the third capacitor C3, the fourth capacitor C4, and the fifth capacitor C5 are all connected to the control terminal of the third switch Q3, and the second terminals of the third capacitor C3, the fourth capacitor C4, and the fifth capacitor C5 are all connected to the first terminal of the third switch Q3.

[0064] In some embodiments, the third switch Q3 can be any one of IGBT, MOSFET and BJT.

[0065] This application also provides a method for fabricating a high-current power device, referring to... Figure 4 As shown, it includes steps S10-S30.

[0066] Specifically, step S10: a plurality of fully controllable power devices 10 are fabricated on a substrate, wherein the first ends of the plurality of fully controllable power devices 10 are connected together, and the second ends of the plurality of fully controllable power devices 10 are connected together.

[0067] Multiple fully controlled power devices 10 are connected in parallel in sequence. By connecting multiple fully controlled power devices 10 in parallel, the current carried by the power devices can be increased, meeting the high current requirements of the power electronics field. It can be understood that, depending on the application requirements of different application scenarios, connecting different numbers of fully controlled power devices 10 in parallel in sequence can increase the current carried by the power devices, thereby adapting to different application scenarios and meeting the high current requirements.

[0068] Step S20: A compensation capacitor module 20 is formed between the control terminal and the first terminal of each fully controlled power device 10.

[0069] Multiple compensation capacitor modules 20 correspond one-to-one with multiple fully controllable power devices 10. Each compensation capacitor module 20 is located between the control terminal and the first terminal of the corresponding fully controllable power device 10. It can be understood that each fully controllable power device 10 is connected to a corresponding compensation capacitor module 20, and each compensation capacitor module 20 is connected in series between the control terminal and the first terminal of the corresponding fully controllable power device 10. Each compensation capacitor module 20 is used to compensate for the capacitance between the control terminal and the first terminal of the fully controllable power device 10, thereby improving the switching speed of the corresponding fully controllable power device 10 and avoiding problems such as excessive switching power consumption and inrush current caused by the switching speed of the fully controllable power device 10.

[0070] Step S30: Measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device 10, and control the capacitance value of the corresponding compensation capacitor module 20 according to the parasitic capacitance so that the capacitance between the first terminal and the control terminal of the fully controllable power device 10 is equal.

[0071] In practical applications, combined with Figure 1 As shown, a capacitance measurement module 30 can be used to measure the parasitic capacitance between the control terminal and the first terminal of each fully controllable power device 10, and control the capacitance value of the corresponding compensation capacitor module 20 according to the parasitic capacitance so that the capacitance between the first terminal and the control terminal of the fully controllable power device 10 is equal.

[0072] Specifically, the capacitance measurement module 30 detects the parasitic capacitance between the first terminal and the control terminal of each fully controlled power device 10. The compensation capacitor module 20 is used to compensate for the capacitance between the first terminal and the control terminal of the fully controlled power device 10. The capacitance measurement module 30 can measure the parasitic capacitance value between the first terminal and the control terminal of the fully controlled power device 10 after the compensation capacitor, and control the capacitance value of the compensation capacitor module 20 according to the measured parasitic capacitance value, so that the capacitance between the first terminal and the control terminal of the fully controlled power device 10 is equal, thereby avoiding problems such as excessive switching power consumption and surge current caused by the mismatch of the switching speed characteristics of the fully controlled power device 10.

[0073] In this embodiment, the problem of requiring high current is solved by connecting multiple fully controllable power devices in parallel. When multiple fully controllable power devices are connected in parallel, a problem of mismatched switching speeds will occur because the parasitic capacitances of the first terminal and the control terminal of the fully controllable power devices are different. This embodiment adds multiple compensation capacitor modules 20 to compensate for the parasitic capacitances of the first terminal and the control terminal of the fully controllable power devices. The size of the compensation capacitor of the compensation capacitor module 20 is controlled by the capacitance measurement module 30, thereby achieving equal capacitance between the first terminal and the control terminal of the fully controllable power device 10 in the high-current power devices, so as to avoid problems such as excessive switching power consumption and surge current caused by the mismatch of the switching speed characteristics of the fully controllable power device 10.

[0074] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0075] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of doped regions is used as an example. In practical applications, the above functional areas can be assigned to different doped regions as needed, that is, the internal structure of the device can be divided into different doped regions to complete all or part of the functions described above.

[0076] In the embodiments, the doped regions can be integrated into one functional region, or each doped region can exist independently, or two or more doped regions can be integrated into one functional region. The integrated functional region can be implemented using the same type of dopant ion or multiple types of dopant ions. Furthermore, the specific names of each doped region are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the doped region in the fabrication method of the above device can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0077] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A high current power device, characterized by, The large-current power device comprises: a plurality of fully-controlled power devices, first ends of the plurality of fully-controlled power devices being connected in common, second ends of the plurality of fully-controlled power devices being connected in common; a plurality of compensation capacitor modules, the plurality of compensation capacitor modules corresponding to the plurality of fully-controlled power devices one by one, each compensation capacitor module being arranged between a control end and a first end of a corresponding fully-controlled power device; a capacitor measurement module connected with the plurality of fully-controlled power devices and the plurality of compensation capacitor modules, configured to measure a parasitic capacitance between the control end and the first end of each fully-controlled power device, and control a capacitance value of a corresponding compensation capacitor module according to the parasitic capacitance, so that capacitances between the first ends and the control ends of the plurality of fully-controlled power devices are equal. The compensation capacitor module is composed of a plurality of compensation capacitors connected in parallel, and the plurality of compensation capacitors are respectively connected to the first ends and the control ends of the corresponding fully-controlled power devices through electric fuses. The compensation capacitor module sets the plurality of compensation capacitors connected in parallel according to the parasitic capacitance measured by the capacitor measurement module. The capacitor measurement module measures the parasitic capacitance between the control end and the first end of each fully-controlled power device, and determines the number of compensation capacitors in the compensation capacitor module connected to the fully-controlled power device based on the detected parasitic capacitance, so that the capacitances between the first ends and the control ends of the plurality of fully-controlled power devices are equal.

2. The high current power device of claim 1, wherein, The plurality of compensation capacitors are respectively connected to the first ends and the control ends of the corresponding fully-controlled power devices through electric fuses.

3. The high current power device of claim 1, wherein, The capacitance values of the plurality of compensation capacitors form an arithmetic sequence.

4. The high current power device of claim 1, wherein, The capacitance values of the plurality of compensation capacitors form a geometric sequence.

5. The high current power device of claim 4, wherein, The capacitance values of the plurality of compensation capacitors are respectively C0, 2C0, 4C0, 8C0, …, 2 n C0, wherein C0 is a reference capacitance value, and n is the number of the compensation capacitors.

6. The high current power device of claim 2, wherein, The electric fuses are anti-fuses.

7. The high current power device of claim 1, wherein, The fully-controlled power device is any one of MOSFET, IGBT or BJT.

8. A method of fabricating a high current power device, characterized by, The method comprises: preparing a plurality of fully-controlled power devices on a substrate, wherein first ends of the plurality of fully-controlled power devices are connected in common, and second ends of the plurality of fully-controlled power devices are connected in common; forming a compensation capacitor module between a control end and a first end of each fully-controlled power device; wherein the compensation capacitor module is composed of a plurality of compensation capacitors connected in parallel, the compensation capacitor module sets the plurality of compensation capacitors connected in parallel according to a parasitic capacitance measured by a capacitor measurement module, the capacitor measurement module measures the parasitic capacitance between the control end and the first end of each fully-controlled power device, and determines the number of compensation capacitors in the compensation capacitor module connected to the fully-controlled power device based on the detected parasitic capacitance, so that the capacitances between the first ends and the control ends of the plurality of fully-controlled power devices are equal; measuring the parasitic capacitance between the control end and the first end of each fully-controlled power device, and controlling the capacitance value of a corresponding compensation capacitor module according to the parasitic capacitance, so that the capacitances between the first ends and the control ends of the fully-controlled power devices are equal.

9. An integrated circuit, characterized by The method comprises: The large-current power device according to any one of claims 1-7.

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