Stripping agent composition for removing photoresist and method for stripping photoresist using the same

Abstract

The present invention relates to a stripping agent composition for removing a photoresist and a method for stripping a photoresist using the same. The stripping agent composition for removing a photoresist can have excellent photoresist stripping force, can inhibit corrosion of the underlying metal film during the stripping process, and can effectively remove oxides.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0002] This application claims the benefit of Korean Patent Application Nos. 10-2020-0122249, filed on September 22, 2020, and 10-2021-0124895, filed on September 17, 2021, with the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entireties.

[0003] The present invention relates to a stripper composition for removing a photoresist and a method for using the same to strip a photoresist. More specifically, the present invention relates to a stripper composition for removing a photoresist and a method for using the same to strip a photoresist, the stripper composition for removing a photoresist having excellent photoresist stripping power, and also suppressing corrosion of the underlying metal film during the stripping process and being able to effectively remove oxides. Background Art

[0004] The microcircuit process of a liquid crystal display device or the semiconductor integrated circuit manufacturing process includes: forming an underlying film, such as a conductive metal film such as aluminum, aluminum alloy, copper, copper alloy, molybdenum, molybdenum alloy, etc. or an insulating film such as a silicon oxide film, a silicon nitride film, an acrylic insulating film, etc.; uniformly coating a photoresist on the underlying film; and optionally, exposing and developing to form a photoresist pattern; then patterning the underlying film using the pattern as a mask. After the patterning process, the photoresist remaining on the underlying film is removed, and for this purpose, a stripper composition for removing a photoresist is used.

[0005] Previously, stripper compositions containing amine compounds, protic polar solvents, aprotic polar solvents, etc. have been widely known and mainly used. Such stripper compositions are known to exhibit a certain degree of photoresist removal and stripping power.

[0006] Meanwhile, with the increase in high-resolution display models, Cu wiring with low resistance is used as the TFT metal.

[0007] For example, Cu is applied to the gate, source / drain wiring in the TFT wiring, and an insulating film such as SiNx, SiOx, etc. is deposited on the upper layer.

[0008] However, as shown in Figure 1 and Figure 2 , after depositing the insulating film, metal oxides (Cu oxides) are generated at the contact portion between Cu and ITO, and ITO is inappropriately bonded due to the Cu oxides, and film lifting occurs between Cu / ITO when annealing the ITO wiring. That is, referring toFigure 2 , after annealing the insulating film, film lifting occurs between Cu and ITO because Cu oxide is not removed, and film lifting occurs between SiNx and ITO because PR remains due to deteriorated stripping force.

[0009] To solve this problem, previously, the stripping process, which is the final step for forming gate or source / drain wiring, was performed twice, thus removing Cu oxide, but the process time increased and cost was incurred.

[0010] In addition, in the case of an existing stripping agent composition consisting only of a tertiary amine, the stripping force deteriorates and it is difficult to remove metal oxides, and in the case of stripping a large amount of photoresist, the stripping force deteriorates. Further, in the case of using a copper metal film as the underlying film, stains and foreign substances are generated due to corrosion during the stripping process, and copper oxide cannot be effectively removed. Summary of the Invention

[0011] Technical Problem

[0012] An object of the present invention is to provide a stripping agent composition for removing photoresist, which has excellent photoresist stripping force, also inhibits corrosion of the underlying metal film during the stripping process, and can effectively remove oxides.

[0013] Another object of the present invention is to provide a method for stripping photoresist using the above stripping agent composition for removing photoresist.

[0014] Technical Solution

[0015] Provided herein is a stripping agent composition for removing photoresist, which comprises:

[0016] Two or more amine compounds;

[0017] An aprotic solvent selected from amide compounds, sulfone compounds, and sulfoxide compounds in which nitrogen is substituted by one or two C1 - C5 linear or branched alkyl groups;

[0018] A protic solvent; and

[0019] A corrosion inhibitor,

[0020] wherein the amine compounds comprise a) a tertiary amine compound; and b) one or more amine compounds selected from cyclic amines, primary amines, and secondary amines, and the weight ratio of a) the tertiary amine compound to b) the amine compound is 1:0.05 to 1:0.8.

[0021] Also provided herein is a method for stripping photoresist, the method comprising the step of stripping photoresist using the stripping agent composition for removing photoresist.

[0022] Hereinafter, a stripping agent composition for removing a photoresist and a method for stripping a photoresist using the same according to a specific embodiment of the present invention will be described in detail.

[0023] The terms used herein are only for explaining specific embodiments and are not intended to limit the present invention. Unless explicitly stated or obvious from the context not to be so, singular expressions include their plural expressions. As used herein, terms such as "comprising", "equipped with" or "having" are intended to specify the presence of features, quantities, steps, structural elements or combinations thereof in practice, and they are not intended to exclude the possibility of the presence or addition of one or more other features, quantities, steps, structural elements or combinations thereof.

[0024] Although various modifications can be made to the present invention and the present invention can have various forms, specific examples will be described and explained in detail below. However, it should be understood that these examples are not intended to limit the present invention to the specific disclosure, and the present invention includes all its modifications, equivalents or alternatives without departing from the spirit and technical scope of the present invention.

[0025] According to an embodiment of the present invention, there is provided a stripping agent composition for removing a photoresist, which comprises: two or more amine compounds; an aprotic solvent selected from amide compounds, sulfone compounds and sulfoxide compounds in which nitrogen is substituted by one or two C1-C5 linear or branched alkyl groups; a protic solvent; and a corrosion inhibitor, wherein the amine compound comprises a) a tertiary amine compound; and b) one or more amine compounds selected from cyclic amines, primary amines and secondary amines, and the weight ratio of a) the tertiary amine compound to b) the amine compound is 1:0.05 to 1:0.8.

[0026] The inventors have studied a stripping agent composition for removing a photoresist and determined the following through experiments and completed the present invention: A stripping agent composition for removing a photoresist that basically contains the above-mentioned tertiary amine compound and simultaneously contains cyclic amines, primary amines, secondary amines, etc. has excellent photoresist stripping force compared to a stripping agent composition composed only of a tertiary amine compound, and also inhibits the corrosion of the underlying metal film during the stripping process and can more effectively remove oxides. Herein, as used herein, a primary amine or a secondary amine means a primary linear amine or a secondary linear amine.

[0027] Specifically, with the increase in high-resolution display models, Cu wiring with low resistance is used as the TFT metal, where the copper wiring uses a molybdenum (Mo) underlying film as a barrier metal, and due to the oxidation-reduction potential, low oxidation-reduction potential causes corrosion of molybdenum. However, when performing the stripping process for removing the photoresist, the stripper causes damage between the copper / molybdenum, thereby causing quality problems. Therefore, a corrosion inhibitor for preventing the corrosion of the stripper needs to be improved.

[0028] Therefore, in the present disclosure, to solve the film lifting defect of the insulating film, a method for effectively removing copper oxide even through a single stripping process of copper metal wiring (gate or source / drain wiring) is provided, thereby reducing the process time and solving the cost problem.

[0029] Therefore, according to the present invention, by adding a cyclic amine, a linear amine compound, etc., the stripping force can be improved, and metal oxides, specifically Cu oxides, can be effectively removed.

[0030] As described above, since the stripper composition for removing the photoresist of the above embodiments contains: an aprotic solvent selected from amide compounds, sulfone compounds, and sulfoxide compounds in which nitrogen is substituted by one or two C1 to C5 linear or branched alkyl groups; a protic solvent; and a corrosion inhibitor, it can maintain excellent stripping force over time. In addition, since the stripper composition for removing the photoresist further contains a tertiary amine compound and one or more amine compounds selected from cyclic amines, primary amines, and secondary amines in addition to the above components, the stripping force can be further improved, metal oxides can be effectively removed, and corrosion of the underlying metal film can be inhibited.

[0031] In particular, since the stripper composition of the above embodiments contains a linear amine and a tertiary amine among two or more amine compounds, the Cu oxide removal rate can be improved. Therefore, the photoresist cannot remain on the insulating film as before after stripping the insulating film, and metal oxides that may be generated on the underlying metal film (e.g., the underlying Cu wiring) can be easily removed, thereby preventing film lifting between the insulating film and the underlying metal film when forming a transparent conductive film such as ITO.

[0032] That is, two or more amine compounds containing component a) and component b) can impart a photoresist stripping force to the stripper composition for removing the photoresist. Specifically, the function of dissolving and removing the photoresist can be performed.

[0033] Tertiary amine compounds can be used to impart a basic stripping force. However, in the case of a stripper composition composed only of tertiary amine compounds, the stripping force may deteriorate, and it may be difficult to remove metal oxides.

[0034] Therefore, the stripper composition for removing a photoresist in the above embodiments contains two amine compounds having a specific composition, wherein a tertiary amine compound is basically used, and a compound such as a cyclic amine, a primary amine, a secondary amine, etc. is used simultaneously, so that the stripping force is improved and the metal oxide removal rate is increased as compared with the prior art. Preferably, the cyclic compound can further improve the stripping force. In addition, a primary linear amine compound or a secondary linear amine compound can improve the metal oxide (Cu oxide) removal force.

[0035] In addition, the stripper composition in the above embodiments contains a relatively small content of other amines (cyclic amines, primary amines or secondary amines) as compared with the tertiary amine, and thus, the metal oxide removal rate of the underlying metal-containing film can be improved. Among them, if the content of the additionally used amine compound is large as compared with the tertiary amine among two or more amine compounds, the effect of removing the metal oxide of the underlying metal-containing film may be slight.

[0036] Therefore, when removing the photoresist pattern, the stripper composition in the above embodiments can maximize the effect of preventing corrosion of the underlying metal-containing film such as a copper-containing film (particularly, a copper / molybdenum metal film), and as compared with the case of using only a tertiary amine compound previously or the case of using two or more amine compounds but not satisfying the amine compound mixing ratio disclosed herein, the stripper composition in the above embodiments can more effectively inhibit the corrosion of the underlying metal-containing film.

[0037] The stripper composition for removing a photoresist in the above embodiments can be removed during the DIW rinse process immediately after the stripper process, thus improving the contact resistance between the underlying metal-containing film and the substrate, such as the contact resistance between the gate (Cu) and the PXL (ITO).

[0038] In addition, the stripper composition for removing a photoresist in the above embodiments (stripper composition) can effectively remove the metal oxide generated in the underlying metal-containing film such as a copper / molybdenum metal film even by being used once during the stripper process.

[0039] Meanwhile, the weight ratio of a) a tertiary amine compound to b) one or more amine compounds can be from 1:0.05 to 1:0.8, or from 1:0.08 to 1:0.5, or from 1:0.08 to 1:0.3. Among them, if the content ratio of b) one or more amine compounds to a) the tertiary amine compound is less than 0.05, the effect of removing the metal oxide of the underlying metal-containing film may be slight. In addition, if the content ratio of b) one or more amine compounds to a) the tertiary amine compound is greater than 0.8, corrosion of the metal in contact with the stripping agent may occur. Furthermore, when the weight ratio of a) the tertiary amine compound to b) one or more amine compounds can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3, the metal oxide generated in the underlying metal-containing film after depositing the insulating film can be removed more effectively, and metal corrosion can be suppressed as much as possible.

[0040] Therefore, according to one embodiment, when using a) a tertiary amine compound and b) a mixture of a cyclic amine and a primary amine, the ratio can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3.

[0041] In addition, when using a) a tertiary amine compound and b) a mixture of a cyclic amine and a secondary amine, the ratio can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3.

[0042] Furthermore, according to another embodiment, when mixing a tertiary amine compound and a cyclic amine compound, the ratio can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3, but more excellent effects can be exhibited when the ratio is from 1:0.05 to 1:0.18.

[0043] In addition, when mixing a tertiary amine compound and a primary amine compound, the ratio can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3, but more excellent effects can be exhibited when the ratio is from 1:0.05 to 1:0.18.

[0044] When mixing a tertiary amine compound and a secondary amine compound, the ratio can be from 1:0.1 to 1:0.5 or from 1:0.08 to 1:0.3, but more excellent effects can be exhibited when the ratio is from 1:0.05 to 1:0.18.

[0045] Therefore, it is important to use a) a tertiary amine compound and b) one or more amine compounds in a specific weight ratio, and by having such a composition ratio, the stripper composition for removing a photoresist can have a maximized ability to prevent corrosion of the underlying metal film. Further, according to the present invention, compared with the case of using a) a tertiary amine compound or b) one or more amine compounds alone or the case where the weight ratio of a) the tertiary amine compound to b) one or more amine compounds does not satisfy the above, an excellent effect of preventing corrosion of the underlying metal film can be exhibited.

[0046] Meanwhile, based on the total composition, the amine compound may be included in an amount of about 0.1 wt% to 10 wt%, or 0.5 wt% to 7 wt%, or 1 wt% to 5 wt%. By having such an amine compound content range, the stripper composition of one embodiment can exhibit excellent stripping force, and can also reduce the deterioration of the process economic efficiency caused by an excessive amount of amine, and can reduce the generation of waste liquid, etc. If the amine compound is included in an excessively high amount, corrosion of the underlying film such as the underlying copper-containing film may be caused, and in order to suppress the corrosion, a large amount of a corrosion inhibitor may need to be used. In this case, due to the large amount of the corrosion inhibitor, a significant amount of the corrosion inhibitor can be adsorbed and retained on the surface of the underlying film, thus deteriorating the electrical properties, etc. of the underlying copper-containing film.

[0047] Specifically, if the content of the amine compound is less than 0.1 wt% based on the total composition, the stripping force of the stripper composition for removing a photoresist may be reduced, and if the content is greater than 10 wt% based on the total composition, the process economy and efficiency may be deteriorated due to the inclusion of an excessive amount of the amine compound.

[0048] Further, within the above amine compound content range, the weight ratio of a) the tertiary amine compound to b) one or more amine compounds can be controlled as described above.

[0049] According to one embodiment, the amine compound may include a) a tertiary amine compound and b) a secondary amine compound; a) a tertiary amine compound and b) a cyclic amine compound and a primary amine compound; or a) a tertiary amine compound and b) a cyclic amine compound and a secondary amine compound.

[0050] Further, according to another embodiment, the amine compound may include a tertiary amine compound and a cyclic amine compound, or may include a tertiary amine compound and a primary amine compound, or may include a tertiary amine compound and a secondary amine compound.

[0051] The weight ratio of the cyclic amine compound to the primary amine compound, or the weight ratio of the cyclic amine compound to the secondary amine compound, may be from 1:1 to 1:10, or 1:1 to 1:5, or 1:1 to 1:3. In addition, if the weight ratio of the cyclic amine to the primary amine compound is greater than 1:1, the effect of removing the metal oxide of the underlying metal-containing film may be slight. In addition, if the ratio is less than 1:10, corrosion of the metal in contact with the stripping agent may occur.

[0052] Meanwhile, two or more amine compounds may include a branched amine compound having a weight average molecular weight of 95 g / mol or more.

[0053] The branched amine compound having a weight average molecular weight of 95 g / mol or more not only imparts a photoresist stripping force, but also appropriately removes the native oxide film on the underlying film such as a copper-containing film, thereby further improving the adhesion between the copper-containing film and the upper insulating film such as a silicon nitride film.

[0054] Among such branched amines, the tertiary amine compounds basically used in the above embodiments may include one or more compounds selected from methyldiethanolamine (MDEA), N-butyldiethanolamine (BDEA), diethylaminoethanol (DEEA), and triethanolamine (TEA), but are not limited thereto.

[0055] The primary amine may include one or more compounds selected from (2-aminoethoxy)-1-ethanol (AEE), aminoethylethanolamine (AEEA), isopropanolamine (MIPA), and monoethanolamine (MEA), but is not limited thereto.

[0056] The secondary amine may include one or more compounds selected from diethanolamine (DEA), triethylenetetramine (TETA), N-methylethanolamine (N-MEA), and diethylenetriamine (DETA), but is not limited thereto.

[0057] Although the specific type of the cyclic amine compound is not significantly limited, it may at least include a cyclic amine compound having a weight average molecular weight of 95 g / mol or more.

[0058] As described above, the cyclic amine can further improve the photoresist stripping force due to the synergistic effect with the tertiary amine compound and increase the solubility of the photoresist.

[0059] Although the examples of the cyclic amine compound are not significantly limited, for example, it may include one or more compounds selected from 1-imidazolidineethanol, 4-imidazolidineethanol, hydroxyethylpiperazine (HEP), and aminoethylpiperazine.

[0060] In addition, the stripper composition for removing a photoresist may contain an amide compound in which nitrogen is substituted with one or two C1-C5 linear or branched alkyl groups, and such a compound can be used as an aprotic solvent. The amide compound in which nitrogen is substituted with one or two C1-C5 linear or branched alkyl groups can satisfactorily dissolve an amine compound and enable the stripper composition for removing a photoresist to effectively penetrate into the underlying film, thereby improving the stripping force and rinsing force of the stripper composition.

[0061] Specifically, the amide compound in which nitrogen is substituted with one or two C1-C5 linear or branched alkyl groups may include an amide compound in which nitrogen is substituted with one or two methyl or ethyl groups. The amide compound in which nitrogen is substituted with one or two methyl or ethyl groups may have the structure of the following Chemical Formula 1.

[0062] [Chemical Formula 1]

[0063]

[0064] In Chemical Formula 1,

[0065] R 1 is hydrogen, methyl, ethyl or propyl,

[0066] R 2 is methyl or ethyl,

[0067] R 3 is hydrogen or a C1-C5 linear or branched alkyl group, and

[0068] R 1 and R 3 may be connected to each other to form a ring.

[0069] Although examples of the C1-C5 linear or branched alkyl group are not limited, for example, it may be methyl, ethyl, propyl, butyl, isobutyl, pentyl, or the like.

[0070] Although examples of the amide compound in which nitrogen is substituted with 1 or 2 methyl or ethyl groups are not significantly limited, for example, a compound of Chemical Formula 1 in which R 2 is methyl or ethyl and R 1 and R 3 are each independently hydrogen can be used.

[0071] For example, as the amide compound in which nitrogen is substituted with 1 or 2 C1-C5 linear or branched alkyl groups, N,N-diethylformamide, N,N-dimethylacetamide, N-methylformamide, 1-methyl-2-pyrrolidone, N-formylethylamine, or a mixture thereof may be mentioned.

[0072] In addition, generally, compounds with high boiling points have low vapor pressures, and such amide solvents can be used in the stripper composition to affect the amount of the stripper used on-site. Therefore, it is more preferable to use an amide compound having a boiling point of 190°C to 215°C.

[0073] According to one embodiment, the amide compound includes N-methylformamide or 1-methyl-2-pyrrolidone. That is, since the stripper process is carried out at 50°C, the amount of the volatilized stripper should be small, and the amide compound has a higher boiling point and a lower vapor pressure than amide compounds such as N,N-diethylformamide, and thus, the volatilization amount is small when the stripper is used. Therefore, the stripping characteristics can be effectively exhibited without increasing the amount.

[0074] In addition, although examples of the sulfone used as an aprotic solvent are not significantly limited, for example, sulfolane can be used. In addition, although examples of the sulfoxide are not significantly limited, for example, dimethyl sulfoxide (DMSO), diethyl sulfoxide, dipropyl sulfoxide, etc. can be used.

[0075] Based on the total composition, the aprotic solvent can be included in an amount of 10 wt% to 80 wt%, 20 wt% to 70 wt%, or 30 wt% to 60 wt% or 35 wt% to 55 wt%. By satisfying the above content ranges, the stripper composition for removing the photoresist can ensure excellent stripping force and maintain the stripping force and rinsing force for a long time over time.

[0076] In addition, the stripper composition for removing the photoresist can include a protic solvent. The protic solvent is a polar organic solvent and allows the stripper composition for removing the photoresist to better penetrate the underlying film, thereby contributing to the excellent stripping force of the stripper composition for removing the photoresist, and it can effectively remove stains on the underlying film such as a copper-containing film, thereby improving the rinsing force of the stripper composition for removing the photoresist.

[0077] The protic solvent can include alkylene glycol monoalkyl ethers. More specifically, the alkylene glycol monoalkyl ethers can include diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether, tripropylene glycol monobutyl ether, or a mixture of two or more thereof.

[0078] In addition, considering the excellent wetting properties of the stripper composition for removing the photoresist and the resulting improved stripping force and rinsing force, alkylene glycol monoalkyl ethers such as diglycol monomethyl ether (MDG), diglycol monoethyl ether (EDG), or diglycol monobutyl ether (BDG) can be used.

[0079] In addition, based on the total composition, the protonic solvent can be included in an amount of 10% to 80% by weight, or 25% to 70% by weight, or 30% to 60% by weight. By satisfying the above content range, the stripper composition for removing the photoresist can ensure excellent stripping force and maintain the stripping force and rinsing force for a long time over time.

[0080] Meanwhile, the stripper composition for removing the photoresist can include a corrosion inhibitor. When using the stripper composition for removing the photoresist to remove the photoresist pattern, the corrosion inhibitor can inhibit the corrosion of the underlying metal-containing film such as a copper-containing film.

[0081] The corrosion inhibitor can include one or more selected from triazole-based compounds, benzimidazole-based compounds, and tetrazole-based compounds.

[0082] Among them, although the examples of the triazole-based compounds are not significantly limited, for example, it can be one or more selected from 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol and 4,5,6,7-tetrahydro-1H-benzotriazole, and specifically, it can be 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol.

[0083] Based on the total composition, the corrosion inhibitor can be included in an amount of 0.01% to 10% by weight, or 0.02% to 5.0% by weight, or 0.03% to 1.0% by weight. If the content of the corrosion inhibitor is less than 0.01% by weight based on the total composition, it may be difficult to effectively inhibit the corrosion of the underlying film. In addition, if the content of the corrosion inhibitor is greater than 10% by weight based on the total composition, a significant amount of the corrosion inhibitor may be adsorbed and retained on the underlying film, thus deteriorating the electrical properties of the underlying copper-containing film, especially the copper / molybdenum metal film.

[0084] Thus, according to one embodiment, a stripper composition for removing a photoresist may comprise 0.1 wt% to 10 wt% of two or more amine compounds; 10 wt% to 80 wt% of an aprotic solvent selected from amide compounds, sulfone compounds, and sulfoxide compounds in which nitrogen is substituted with one or two C1 to C5 linear or branched alkyl groups; 10 wt% to 80 wt% of a protic solvent; and 0.01 wt% to 10 wt% of a corrosion inhibitor.

[0085] Meanwhile, the stripper composition for removing a photoresist may further comprise a silicon-based nonionic surfactant. The silicon-based nonionic surfactant can be stably maintained without chemical change, denaturation, or decomposition even in a strongly basic stripper composition containing an amine compound or the like, and exhibits excellent compatibility with the above-mentioned aprotic polar solvent or protic organic solvent. Thus, the silicon-based nonionic surfactant can be well mixed with other components to reduce the surface tension of the stripper composition, and allows the stripper composition to exhibit more excellent wetting characteristics with respect to the photoresist to be removed and the underlying film. Accordingly, a stripper composition according to one embodiment containing a silicon-based nonionic surfactant can not only exhibit more excellent photoresist stripping force, but also exhibit excellent rinsing force with respect to the underlying film, and thus, even after treatment with the stripper composition, stains and foreign matters can be effectively removed without generating and remaining stains or foreign matters on the underlying film.

[0086] In addition, the silicon-based nonionic surfactant can exhibit the above effects even at a very low content, and thus, can minimize by-products due to denaturation or decomposition of the silicon-based nonionic surfactant.

[0087] Specifically, the silicon-based nonionic surfactant may include a polysiloxane-based polymer. More specifically, although examples of the polysiloxane-based polymer are not significantly limited, for example, polyether-modified acryloyl-functional polydimethylsiloxane, polyether-modified siloxane, polyether-modified polydimethylsiloxane, polyethylalkylsiloxane, aralkyl-modified polymethylalkylsiloxane, polyether-modified hydroxy-functional polydimethylsiloxane, polyether-modified dimethylpolysiloxane, modified acryloyl-functional polydimethylsiloxane, or a mixture of two or more thereof can be used.

[0088] Based on the total composition, the silicon-based nonionic surfactant may be included in an amount of 0.0005% to 0.1% by weight, or 0.001% to 0.09% by weight, or 0.001% to 0.01% by weight. If the content of the silicon-based nonionic surfactant based on the total composition is less than 0.0005% by weight, the effects of improving the stripping force and rinsing force of the stripping agent composition by adding the surfactant may not be fully achieved. In addition, if the content of the silicon-based nonionic surfactant based on the total composition is greater than 0.1% by weight, when the stripping agent composition is used for the stripping process, bubbles may be generated under high pressure and stains may be formed on the underlying film, or equipment sensor failures may be caused.

[0089] The stripping agent composition for removing a photoresist may further contain common additives as needed, and there are no specific limitations on the specific types or contents of the additives.

[0090] In addition, the stripping agent composition for removing a photoresist can be prepared by a common method of mixing the above components, and there are no specific limitations on the preparation method of the stripping agent composition for removing a photoresist.

[0091] With the above stripping agent composition for removing a photoresist according to an embodiment, after cleaning a substrate on which copper is deposited with the photoresist stripping agent composition, the copper oxide removal force of the cleaned substrate surface measured by XPS (X-ray photoelectron spectroscopy) according to the following formula 1 may be 0.35 or less or 0.3 or less or 0.25 or less or 0.1 to 0.23.

[0092] [Formula 1]

[0093] Cu oxide removal force = Quantification number of XPS narrow scan O (oxygen) after stripping a substrate with a photoresist / Quantification number of XPS narrow scan Cu (copper) after stripping a substrate with a photoresist.

[0094] In formula 1, the smaller the O / Cu, the more excellent the Cu oxide removal rate, and thus, more excellent copper oxide removal force can be exhibited according to the present invention.

[0095] The substrate may be a glass substrate with a size of 5 cm × 5 cm on which copper is deposited.

[0096] The cleaned substrate can be provided as follows: Immerse the copper-deposited substrate in the stripping agent composition at 50 °C for 60 seconds, clean it with triple-distilled water for 30 seconds, and then dry it with an air gun.

[0097] In addition, the composition for removing photoresist not only has excellent copper oxide removing power, but also has excellent photoresist stripping power, and prevents corrosion of the underlying film of Cu / Mo metal, and thus, a display with excellent performance can be provided.

[0098] Meanwhile, according to another embodiment of the present invention, there is provided a method for stripping photoresist, the method including the step of stripping the photoresist using the stripping agent composition for removing photoresist of an embodiment.

[0099] A photoresist stripping method of an embodiment may include the following steps: forming a photoresist pattern on a substrate having an underlying film; patterning the underlying film having the photoresist pattern; and stripping the photoresist using the stripping agent composition for removing photoresist.

[0100] Regarding the stripping agent composition for removing photoresist, the details described with respect to the above embodiments are applied.

[0101] Specifically, the photoresist stripping method may include forming a photoresist pattern on a substrate having an underlying film through a photolithography process, then patterning the underlying film using the photoresist pattern as a mask, and stripping the photoresist using the above-described stripping agent composition.

[0102] In the photoresist stripping method, the step of forming the photoresist pattern and the step of patterning the underlying film may be carried out through common device manufacturing processes and are not specifically limited.

[0103] Meanwhile, although examples of the step of stripping the photoresist using the stripping agent composition for removing photoresist are not significantly limited, for example, the following method may be used: treating the substrate on which the photoresist pattern remains with the stripping agent composition for removing photoresist, cleaning it with an alkaline buffer solution, cleaning it with ultrapure water, and drying. Since the stripping agent composition exhibits excellent stripping power, rinsing power, and native oxide film removing ability for effectively removing stains on the underlying film, it can effectively remove the photoresist pattern remaining on the underlying film and maintain a good surface state of the underlying film. Therefore, subsequent processes can be appropriately carried out on the patterned underlying film to form a device.

[0104] Although examples of the underlying film are not specifically limited, it may include aluminum or aluminum alloy, copper or copper alloy, molybdenum or molybdenum alloy, or a mixture thereof, a composite alloy thereof, a composite laminate thereof, etc.

[0105] There are no specific limitations on the type, composition, or properties of the photoresist to be stripped. For example, it can be a photoresist known to be used for the underlying film containing aluminum or aluminum alloy, copper or copper alloy, molybdenum or molybdenum alloy, etc. More specifically, the photoresist can contain a photosensitive resin component, such as novolak resin, resol resin, or epoxy resin, etc.

[0106] Advantageous Effects

[0107] According to the present invention, a stripper composition for removing a photoresist and a method for using the same to strip the photoresist are provided. The stripper composition for removing the photoresist has excellent photoresist stripping force, and also inhibits corrosion of the underlying metal film during the stripping process. In particular, it effectively removes metal oxides (Cu oxides) generated at the contact portion between Cu and ITO after depositing an insulating film, thereby solving the film lift-off defect. Brief Description of the Drawings

[0108] Figure 1 It is a schematic diagram for explaining film lift-off in an insulating film after stripping and annealing in a previous display manufacturing process.

[0109] Figure 2 It shows an FE-SEM image of film lift-off after annealing of the insulating film. Detailed Description of the Invention

[0110] Hereinafter, the present invention will be described in more detail in the following examples. However, these examples are only presented as examples of the present invention, and the present invention is not limited thereby.

[0111] <Examples and Comparative Examples: Preparation of a Stripper Composition for Removing a Photoresist>

[0112] According to the compositions in Table 1 below, the components were mixed to prepare the stripper compositions for removing the photoresist in the examples and comparative examples. The specific compositions of the prepared stripper compositions for removing the photoresist are as described in Table 1 and Table 2 below.

[0113] Specifically, the components described in Table 1 and Table 2 below were mixed in a 500 ml beaker to prepare a 300 g mixture. It was stirred and heated on a hot plate at a temperature of 50 °C to prepare a liquid chemical (stripper composition).

[0114] [Table 1]

[0115]

[0116] [Table 2]

[0117]

[0118] *MDEA: N-Methyldiethanolamine (CAS: 150-59-9)

[0119] *TEA: Triethanolamine (CAS: 102-71-6)

[0120] *BDEA: N-Butyldiethanolamine (CAS: 102-79-4)

[0121] *IDE: 1-Imidazolidineethanol (CAS: 77215-47-5)

[0122] *HEP: Hydroxyethyl-piperazine (CAS: 103-76-4)

[0123] *AEP: N-Aminoethylpiperazine (CAS: 140-31-8)

[0124] *AEEA: Aminoethylethanolamine (CAS: 111-41-1)

[0125] *AEE: 2-(2-Aminoethoxy)ethanol (CAS: 929-06-6)

[0126] *N-MEA: N-Methylethanolamine (CAS: 109-83-1)

[0127] *NMF: N-Methylformamide (CAS: 123-39-7)

[0128] *NMP: N-Methyl-2-pyrrolidone (CAS: 872-50-4)

[0129] *EDG: Ethyl diglycol (CAS: 111-90-0)

[0130] *MDG: Methyl diglycol (CAS: 111-77-3)

[0131] *BDG: Diethylene glycol monobutyl ether (CAS: 112-34-5)

[0132] *Corrosion inhibitor:

[0133] 2,2'[[(Methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol (2,2'[[(Methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol, CAS: 88477-37-6), (DEATTA, IR-42)

[0134] <Comparative Examples 1 to 15: Preparation of Stripping Agent Compositions for Removing Photoresist>

[0135] According to the compositions in Table 3 and Table 4 below, the components were mixed to prepare the stripping agent compositions for removing photoresist for each comparative example. The specific compositions of the prepared stripping agent compositions for removing photoresist are as described in Table 3 and Table 4 below.

[0136] Specifically, the components described in Table 3 and Table 4 below were mixed in a 500 ml beaker to prepare a 300 g mixture. It was stirred and heated on a hot plate under a temperature condition of 50 °C to prepare a liquid chemical (stripping agent composition).

[0137] [Table 3]

[0138]

[0139] [Table 4]

[0140]

[0141] *MDEA: N-Methyldiethanolamine (CAS: 150-59-9) *TEA: Triethanolamine (CAS: 102-71-6)

[0142] *BDEA: N-Butyldiethanolamine (CAS: 102-79-4)

[0143] *IDE: 1-Imidazolidineethanol (CAS: 77215-47-5)

[0144] *HEP: Hydroxyethyl-piperazine (CAS: 103-76-4)

[0145] *AEP: N-Aminoethylpiperazine (CAS: 140-31-8)

[0146] *AEEA: Aminoethylethanolamine (CAS: 111-41-1)

[0147] *AEE: 2-(2-Aminoethoxy)ethanol (CAS: 929-06-6)

[0148] *N-MEA: N-Methylethanolamine (CAS: 109-83-1)

[0149] *NMF: N-Methylformamide (CAS: 123-39-7)

[0150] *NMP: N-Methyl-2-pyrrolidone (CAS: 872-50-4)

[0151] *EDG: Ethyl diglycol (CAS: 111-90-0)

[0152] *MDG: Methyl diglycol (CAS: 111-77-3)

[0153] *BDG: Diethylene glycol monobutyl ether (CAS: 112 - 34 - 5)

[0154] *Corrosion inhibitor: 2,2'-[(methyl - 1H - benzotriazol - 1 - yl)methyl]imino]bisethanol, (CAS: 88477 - 37 - 6), (DEATTA, IR - 42)

[0155] *MTBT: 4 - Methyl - 4,5,6,7 - tetrahydro - 1H - benzotriazole

[0156] *HMDM: 4 - Hydroxymethyl - 2,2 - dimethyl - 1,3 - dioxolane

[0157] <Experimental Examples: Measurement of the properties of the stripping agent compositions obtained in the Examples and Comparative Examples for removing photoresist>

[0158] The properties of the stripping agent compositions obtained in the Examples and Comparative Examples were measured as follows, and the results are shown in the tables.

[0159] 1. Evaluation of stripping force

[0160] (1) Preparation of the substrate for evaluation

[0161] First, 3.5 ml of a photoresist composition (product name: JC - 800) was dropped onto a 100 mm × 100 mm glass substrate on which a copper - containing thin film was formed, and the photoresist composition was spin - coated at 400 rpm for 10 seconds in a spin coater. The glass substrate was mounted on a hot plate and hard - baked at 170 °C for 20 minutes under very severe conditions to form a photoresist. The glass substrate with the photoresist formed thereon was air - cooled at room temperature and then cut into a size of 50 mm × 50 mm, thus preparing a sample for evaluating the stripping force.

[0162] (2) Evaluation of stripping

[0163] 300 g of each of the stripping agent compositions obtained in the Examples and Comparative Examples was prepared, and when the temperature was raised to 50 °C, the substrates prepared above were immersed in the stripping agent composition for 60 seconds to 600 seconds.

[0164] After immersion, the substrates were taken out and cleaned with triple - distilled water for 30 seconds, and this process was repeated three times and then dried with an air gun.

[0165] Using an optical microscope, the time when the remaining photoresist in the cleaned samples disappeared was determined to evaluate the stripping force (unit: seconds).

[0166] The stripping forces of the respective stripping agent compositions of the Examples and Comparative Examples were evaluated as described above, and the results are shown in Tables 5 to 7 below.

[0167] [Table 5]

[0168]

[0169] [Table 6]

[0170]

[0171] [Table 7]

[0172]

[0173] As shown in Tables 5 to 7, it was determined that the stripper compositions of the examples containing two or more amine compounds having specific compositions and ratios exhibited a stripping force equivalent to or more excellent than that of the stripper compositions of the comparative examples and reference examples. That is, it was determined that in Examples 1 to 9 and Reference Examples 1 to 3, since they basically contained tertiary amines and simultaneously contained cyclic amines, or simultaneously contained cyclic amines and primary linear amines or secondary linear amines, the stripping force was improved compared to the comparative examples. In addition, in Reference Examples 4 to 6, a small amount of primary linear amines or secondary linear amines was further contained in addition to the tertiary amines, and thus a stripping force equivalent to that of the comparative examples was exhibited.

[0174] However, although the results of Reference Examples 1 to 6 were better than those of the comparative examples, the stripping force was poor compared to Examples 1 to 9. That is, even if a tertiary amine and another type of amine are contained, the stripping force for the photoresist composition cannot be improved unless the specific combination and ratio of the amines as disclosed herein are also satisfied.

[0175] On the other hand, Examples 1 to 9 generally exhibited a stripping force equivalent to or more excellent than that of the comparative examples and reference examples.

[0176] 2. Evaluation of Cu Oxide Removal

[0177] (1) Preparation of Substrate for Evaluation

[0178] A glass substrate with a size of 5 cm × 5 cm on which copper (without pattern) was deposited was prepared.

[0179] (2) Evaluation of Cu Oxide Removal

[0180] 300 g of each stripper composition obtained in the examples and comparative examples was prepared, and when the temperature was raised to 50 °C, the substrate prepared above was immersed in the stripper composition for 60 seconds.

[0181] After the immersion, the substrate was taken out and cleaned with triple distilled water for 30 seconds, and then dried with an air gun.

[0182] The copper oxide removal force on the copper surface of the cleaned sample was evaluated using XPS (X-ray photoelectron spectroscopy).

[0183] Specifically, narrow scans of C, Cu, and O were performed by XPS to quantify the elements, and then O / Cu was calculated and compared with the O / Cu ratio after the photoresist was stripped from the specimen. (The smaller the O / Cu ratio, the better the Cu oxide removal rate).

[0184] [Equation 1-1]

[0185] Copper oxide removal force = the quantified number of O (oxygen) in the XPS narrow scan after the sample is stripped with the stripping agent composition for removing the photoresist / the quantified number of Cu (copper) in the XPS narrow scan after the sample is stripped with the stripping agent composition for removing the photoresist

[0186] As described above, the copper oxide removal forces of the respective stripping agent compositions of the examples and comparative examples were evaluated, and the results are shown in Tables 8 to 10 below.

[0187] [Table 8]

[0188]

[0189] [Table 9]

[0190]

[0191] [Table 10]

[0192]

[0193] As shown in Tables 8 to 10, compared with the stripping agent compositions of the comparative examples and reference examples, the stripping agent compositions of the examples containing two or more amine compounds having specific compositions and ratios exhibited excellent Cu oxide removal rates. That is, in the cases of Comparative Examples 1 to 9 in which a primary amine, a secondary amine, a tertiary amine, or a cyclic amine was contained alone, the Cu oxide removal rate was generally worse than that of the examples. In addition, in the cases of Comparative Examples 10 to 12 in which a primary amine, a secondary amine, or a cyclic amine was additionally contained in addition to the tertiary amine but did not satisfy the specific content ratio disclosed herein, the Cu oxide removal rate was worse than that of the examples. In addition, in the cases of Comparative Examples 14 to 15 in which deionized water or an oxolane compound was contained, the Cu oxide removal rate was poor and metal corrosion occurred.

[0194] Specifically, it was determined that the Cu oxide removal rate was further improved in Examples 1 to 9, which basically contained a tertiary amine and simultaneously contained a cyclic amine and a linear amine, as compared with the stripping agent compositions of Comparative Examples 1 to 3 which contained only a tertiary amine. Further, in the case of Reference Examples 1 to 6 which contained a tertiary amine and a cyclic amine or a linear amine at a specific content ratio, the effects were equivalent to or better than those of Comparative Examples 4 to 9, but were excellent as compared with Comparative Examples 1 to 3. However, although Reference Examples 1 to 6 had better results than the Comparative Examples, the Cu oxide removal rate was poor as compared with Examples 1 to 9. That is, even if a tertiary amine and another type of amine are contained, the Cu oxide removal rate cannot be improved unless the specific combination and ratio of the amines as disclosed herein are also satisfied.

[0195] On the other hand, in the case of Examples 1 to 9, as compared with the Reference Examples and the Comparative Examples, the stripping force was generally equivalent to or more excellent.

[0196] Therefore, it was determined that in the case of Examples 1 to 9 which contained a mixture of a cyclic amine and a primary or secondary amine in a specific content in addition to a tertiary amine, the Cu oxide removal rate was very excellent.

[0197] Therefore, the stripping agent composition of the Examples has an excellent Cu oxide removal rate, and thus, the film lifting defect between Cu / ITO during annealing of the ITO wiring can be solved.

[0198] 3. Evaluation of corrosion of the film under the copper (Cu) / molybdenum (Mo) metal (evaluation of Cu / Mo undercut damage)

[0199] (1) Preparation of the substrate for evaluation

[0200] A glass substrate having a size of 5 cm × 5 cm and having a copper / molybdenum pattern formed thereon was prepared.

[0201] (2) Evaluation of corrosion of the film under the copper / molybdenum metal

[0202] 300 g of each of the stripping agent compositions obtained in the Examples and the Comparative Examples was prepared, and when the temperature was raised to 50°C, the substrate was immersed in the stripping agent composition for 10 minutes.

[0203] After the immersion, the substrate was taken out and cleaned with triple distilled water for 30 seconds, and then dried with an air gun.

[0204] The cross-sections of the samples obtained in the examples, reference examples, and comparative examples for evaluating the corrosion of the underlying film were observed using a transmission electron microscope (Helios NanoLab650). Specifically, a thin specimen of the sample for evaluating the corrosion of the underlying film was fabricated using FIB (Focused Ion Beam), and then observed at an acceleration voltage of 2 kV. To prevent surface damage of the sample by the ion beam during the specimen fabrication process, a Pt (platinum) protective layer was formed on the surface (Cu layer) of the specimen before fabricating the TEM thin specimen.

[0205] As described above, the corrosion of the stripping agent compositions of the examples, reference examples, and comparative examples was evaluated, and the results are shown in Tables 11 to 13 below.

[0206] [Table 11]

[0207]

[0208] [Table 12]

[0209]

[0210] [Table 13]

[0211]

[0212] As shown in Tables 11 to 13, it was determined that in the case of the stripping agent compositions of the examples in which two or more amine compounds were included in specific compositions and ratios, the corrosion of the underlying Cu / Mo metal film was reduced compared to the stripping agent compositions of the comparative examples and reference examples. Therefore, excellent Cu / Mo undercut damage evaluation results were determined. That is, the stripping agent compositions of the examples satisfying a weight ratio of tertiary amine: one or more amine compounds in the range of 1:0.1 to 1:0.5 contained relatively small amounts of additional amines (cyclic amines and primary linear amines or secondary linear amines) compared to the tertiary amine, thereby preventing the corrosion of the underlying Cu / Mo metal film. In addition, in the case of the reference examples, cyclic amines, primary amines, or secondary amines were used in specific ratios in amounts smaller than that of the tertiary amine, thereby improving the corrosion of the underlying Cu / Mo metal film compared to the comparative examples.

[0213] Specifically, in the cases of Examples 1 to 9 and Reference Examples 1 to 3, since they basically contained a tertiary amine and simultaneously contained a cyclic amine, or simultaneously contained a cyclic amine and a primary linear amine or a secondary linear amine, the stripping force was improved. In addition, in the cases of Reference Examples 4 to 6, since they contained a secondary linear amine or a primary linear amine in addition to the tertiary amine, they exhibited a stripping force equivalent to that of the comparative examples.

[0214] However, although Reference Examples 1 to 6 exhibited equivalent corrosion compared to Examples 1 to 9, the stripping force and Cu oxide removal rate of the photoresist composition could not be improved as described above.

[0215] In addition, the stripping agent compositions of Comparative Examples 4 to 9 had an increased content of primary amines, secondary amines, or cyclic amines, and thus, the Cu / Mo undercut size increased and the corrosion was poor. Among them, in the case of Comparative Examples 1 to 3 in which only tertiary amines were included in the stripping agent composition, the Cu / Mo undercut size was similar to the Cu / Mo undercut size of the Examples, but the stripping force and Cu oxide removal rate were poor. In addition, in the case of Comparative Examples 10 to 12 in which primary amines, secondary amines, or cyclic amines were additionally included in addition to tertiary amines but did not satisfy the specific content ratios disclosed herein, the results were poor. In addition, in Comparative Examples 14 to 15 in which deionized water or oxolane compounds were included, on the contrary, corrosion of the film under the Cu / Mo metal was caused.

[0216] From these results, it can be determined that the stripping agent composition of the Examples has a very excellent ability to prevent corrosion of the film under the Cu / Mo metal.

Claims

1. A stripping agent composition for removing a photoresist, comprising: Two or more amine compounds; An aprotic solvent selected from amide compounds, sulfone compounds, and sulfoxide compounds in which nitrogen is substituted by one or two C1 to C5 linear or branched alkyl groups; A protic solvent ； And A corrosion inhibitor, Wherein the amine compounds comprise a) A tertiary amine compound and b) A cyclic amine compound and a primary amine compound; Or a) A tertiary amine compound and b) A cyclic amine compound and a secondary amine compound, and The weight ratio of the a) tertiary amine compound to the b) amine compound is 1:0.05 to 1:0.8, Wherein the weight ratio of the cyclic amine compound to the primary amine compound is 1:1 to 1:10; or the weight ratio of the cyclic amine compound to the secondary amine compound is 1:1 to 1:10, Wherein, based on the total stripping agent composition, the amine compounds are included in an amount of 0.1% by weight to 10% by weight.

2. The stripping agent composition for removing a photoresist according to claim 1, wherein after impregnating a substrate on which copper is deposited with the stripping agent composition and cleaning the substrate with distilled water, the copper oxide removing force of the cleaned substrate surface measured by X-ray photoelectron spectroscopy according to the following formula 1 is 0.35 or less: [Formula 1] Cu oxide removing force = Quantitative number of X-ray photoelectron spectroscopy narrow scan O (oxygen) after stripping the substrate with the stripping agent composition for removing a photoresist / Quantitative number of X-ray photoelectron spectroscopy narrow scan Cu (copper) after stripping the substrate with the stripping agent composition for removing a photoresist.

3. The stripping agent composition for removing a photoresist according to claim 1, wherein, based on the total stripping agent composition, the amine compounds are included in an amount of 0.5% by weight to 7% by weight.

4. The stripping agent composition for removing a photoresist according to claim 1, wherein the tertiary amine compound includes one or more compounds selected from methyldiethanolamine, N-butyldiethanolamine, diethylaminoethanol, and triethanolamine.

5. The stripping agent composition for removing a photoresist according to claim 1, wherein the primary amine includes one or more compounds selected from (2-aminoethoxy)-1-ethanol, aminoethylethanolamine, isopropanolamine, and ethanolamine.

6. The stripping agent composition for removing a photoresist according to claim 1, wherein the secondary amine includes one or more compounds selected from diethanolamine, triethylenetetramine, N-methylethanolamine, and diethylenetriamine.

7. The stripping agent composition for removing a photoresist according to claim 1, wherein the cyclic amine includes one or more compounds selected from 1-imidazolidineethanol, 4-imidazolidineethanol, hydroxyethylpiperazine, and aminoethylpiperazine.

8. The stripping agent composition for removing a photoresist according to claim 1, wherein the amide compound includes a compound of the following Chemical Formula 1: [Chemical Formula 1] In the Chemical Formula 1, R 1 is hydrogen, methyl, ethyl or propyl, R 2 is methyl or ethyl, R 3 is hydrogen or a C1-C5 linear or branched alkyl group, and R 1 and R 3 are capable of being connected to each other to form a ring.

9. The stripping agent composition for removing a photoresist according to claim 1, wherein the amide compound comprises N,N - diethylformamide, N,N - dimethylacetamide, N - methylformamide, 1 - methyl - 2 - pyrrolidone, N - formylethylamine, or a mixture thereof.

10. The stripping agent composition for removing a photoresist according to claim 1, wherein the amide compound comprises N - methylformamide or 1 - methyl - 2 - pyrrolidone.

11. The stripping agent composition for removing a photoresist according to claim 1, wherein the protic solvent comprises one or more selected from compounds based on alkylene glycol monoalkyl ethers.

12. The stripping agent composition for removing a photoresist according to claim 1, wherein the composition comprises: 0.1 wt% to 10 wt% of the two or more amine compounds; 10 wt% to 80 wt% of the aprotic solvent selected from amide compounds, sulfone compounds, and sulfoxide compounds in which nitrogen is substituted by one or two C1 - C5 linear or branched alkyl groups; 10 wt% to 80 wt% of the protic solvent; and 0.01 wt% to 10 wt% of the corrosion inhibitor.

13. A method for stripping a photoresist, comprising the step of stripping the photoresist using the stripping agent composition for removing a photoresist according to claim 1.

Images