A method for manufacturing a quartz resonator wafer and a quartz resonator wafer

Abstract

The application relates to the technical field of resonators, in particular to a quartz resonator wafer manufacturing method and a quartz resonator wafer. The method comprises the following steps: etching N first grooves on the front surface of a quartz wafer and etching N second grooves on the back surface of the quartz wafer, each of the first grooves and the second grooves is in a structure of wide at the top and narrow at the bottom, the second bottom end width of each second groove is equal to the first bottom end width of the opposite first groove, and the second bottom end length is greater than or equal to the first bottom end length; a first through hole is etched from the position opposite to one end of the second bottom end, the first through hole length is equal to the first bottom end width; a second through hole is etched from the other end of the second bottom end, the second through hole length is less than the second bottom end width; and a shallow groove is etched on the target edge of the second through hole, when the quartz resonator wafer is folded along the shallow groove, there is no defect and extra protrusion, and the device performance is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of resonators, and in particular to a quartz resonator wafer manufacturing method and a quartz resonator wafer. BACKGROUND

[0002] As a device for generating an oscillation signal, a quartz resonator has been widely used in communication, radar, precision calculation, precision balance, mobile phone, aviation, electronic watch, automobile, etc. fields. A traditional quartz resonator wafer is formed by mechanical processing methods such as wafer grinding, polishing, wafer size line cutting, and drum grinding shape. However, with the development of small size and high frequency of quartz resonators, the processing technology is gradually upgraded from mechanical processing methods to semiconductor micro-processing technology.

[0003] However, in the semiconductor micro-processing technology, the wafer needs to be taken off from the wafer by using a wafer folding machine automatically or manually during the packaging process of the quartz resonator wafer. The wafer folding process is easy to produce defects or the wafer is accompanied by excess protrusions, as shown in FIG. 1. Since the end part caused by the defect or the protrusion is the position of the wafer dispensing, it has an impact on the performance of the wafer. Figure 1

[0004] Therefore, how to get a neat end part after folding the wafer is a technical problem to be solved at present. SUMMARY

[0005] In view of the above problems, the present application is proposed in order to provide a quartz resonator wafer manufacturing method and a quartz resonator wafer which overcome the above problems or at least partially solve the above problems.

[0006] In a first aspect, the present application provides a quartz resonator wafer manufacturing method, characterized in that it comprises:

[0007] providing a quartz wafer;

[0008] etching N first grooves on the front surface of the quartz wafer, and etching N second grooves on the back surface of the quartz wafer, the N first grooves and the N second grooves are opposite to each other, and each first groove and each second groove are of a structure of wide at the top and narrow at the bottom, the second bottom end width of each second groove is equal to the first bottom end width of the opposite first groove, and the second bottom end length is greater than or equal to the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, and the other end of the second bottom end exceeds the other end of the first bottom end or is opposite to the other end of the first bottom end, and N is a positive integer;

[0009] for each first groove and the opposite second groove, etching from the position of one end of the first bottom end and opposite to one end of the second bottom end to the back surface to form a first through hole, and the length of the first through hole is equal to the first bottom end width.​

[0010] a second through hole is etched from the second bottom end opposite the first bottom end to the back surface, the second through hole having a length less than a width of the second bottom end;

[0011] a shallow groove is etched at a target edge of the second through hole on the front surface, the target edge being an edge toward an interior of the first bottom end;

[0012] each quartz resonator wafer is folded along the respective shallow groove to form N quartz resonator wafers.

[0013] Further, after etching the shallow groove at the target edge of the second through hole on the front surface, the method further comprises:

[0014] when the second bottom end length is greater than the first bottom end length, a first metal electrode is formed at the first bottom end of the first groove, the second bottom end of the second groove, and an area extending from the first bottom end to the other end of the first bottom end and outside the first groove; or

[0015] when the second bottom end length is equal to the first bottom end length, a second metal electrode is formed at the first bottom end of the first groove and the second bottom end of the second groove.

[0016] Further, the etching the N first grooves on the front surface of the quartz wafer and etching the N second grooves on the back surface of the quartz wafer comprises:

[0017] a first chromium film layer and a first gold film layer are sequentially formed on the front surface of the quartz wafer from bottom to top;

[0018] a first photoresist layer is formed on the first gold film layer, and the first photoresist layer is exposed and developed to form N first etching areas;

[0019] the N first etching areas are etched to form the N first grooves;

[0020] a second chromium film layer and a second gold film layer are sequentially formed on the back surface of the quartz wafer from bottom to top;

[0021] a second photoresist layer is formed on the second gold film layer, and the second photoresist layer is exposed and developed to form N second etching areas;

[0022] the N second etching areas are etched to form the N second grooves.

[0023] Further, before etching the shallow groove at the target edge of the second through hole on the front surface, the target edge being an edge toward an interior of the first bottom end, to form the N quartz resonator wafers, the method further comprises:

[0024] For each first groove and the opposite second groove, when the second bottom end length is greater than the first bottom end length, at the other end of the first bottom end, two ends in the width direction of the first bottom end form a third through hole and a fourth through hole, both of which are communicated from the first bottom end to the opposite second bottom end; or

[0025] When the second bottom end length is equal to the first bottom end length, two ends in the width direction of the first bottom end at a predetermined distance from the second through hole form a sixth through hole and a seventh through hole, both of which are communicated from the first bottom end to the opposite second bottom end.

[0026] Further, etching a shallow groove on the target edge of the second through hole on the front surface forms a shallow groove, the target edge is the edge close to the other end of the first bottom end, before forming N quartz resonator wafers, further comprising:

[0027] For each first groove and the opposite second groove, when the second bottom end length is greater than the first bottom end length, at the other end of the first bottom end, the middle part in the width direction of the first bottom end forms a fifth through hole, which is communicated from the first bottom end to the opposite second bottom end; or

[0028] When the second bottom end length is equal to the first bottom end length, the middle part in the width direction of the first bottom end at a predetermined distance from the second through hole forms an eighth through hole, which is communicated from the first bottom end to the opposite second bottom end.

[0029] In a second aspect, the present application also provides a quartz resonator wafer, comprising:

[0030] The oscillation region, the electrode region and the frame region are sequentially arranged along the length direction of the quartz wafer;

[0031] The thickness of the electrode region is less than or equal to the thickness of the frame region;

[0032] When the thickness of the electrode region is less than the thickness of the frame region, the junction of the back surface of the electrode region and the back surface of the frame region is transitioned by a first slope, the front surface of the electrode region is coplanar with the front surface of the frame region, and the front surface of the electrode region includes a second slope and a top coplanar with the front surface of the frame region, and the back surface of the electrode region is coplanar with the back surface of the oscillation region; or

[0033] When the thickness of the electrode region is equal to the thickness of the frame region, the thickness of the electrode region is equal to the thickness of the oscillation region;

[0034] Further, the frame region has a shallow groove at the junction of the front surface of the frame region and the front surface of the electrode region, and a second through hole with the shallow groove as the edge on the frame region.

[0035] Further, when the thickness of the electrode region is less than the thickness of the frame region, the application further comprises:

[0036] A third through hole and a fourth through hole are located at the bottom end of the first slope, at the junction of the oscillation region and the second slope, and on both sides of the foot of the first slope, for weakening the oscillation frequency transmitted from the oscillation region to the electrode region.

[0037] Further, when the thickness of the electrode region is less than the thickness of the frame region, the application further comprises:

[0038] A fifth through hole is located at the bottom end of the second slope, at the junction of the oscillation region and the first slope, and opposite to the middle part of the first slope, for weakening the oscillation frequency transmitted from the oscillation region to the electrode region.

[0039] Further, when the thickness of the electrode region is equal to the thickness of the frame region, the application further comprises:

[0040] A sixth through hole and a seventh through hole are located at a preset distance from the second through hole and along the two ends in the width direction of the quartz wafer, and the preset distance is the length of the electrode region; or

[0041] An eighth through hole is located at a preset distance from the second through hole and along the middle part in the width direction of the quartz wafer.

[0042] Further, the shallow groove is specifically any one of the following:

[0043] A continuous strip structure and a discontinuous point structure.

[0044] Among the discontinuous point structure, the point structure is specifically any one of the following:

[0045] A circle, a rectangle and a diamond.

[0046] The one or more technical solutions in the embodiments of the application have at least the following technical effects or advantages:

[0047] The application provides a manufacturing method of a quartz resonator wafer, comprising the following steps: providing a quartz wafer; etching N first grooves on the front surface of the quartz wafer; etching N second grooves on the back surface of the quartz wafer, the N first grooves and the N second grooves are opposite to each other, each of the first grooves and the second grooves has a structure of wide at the top and narrow at the bottom, the second bottom end width of each of the second grooves is equal to the first bottom end width of the opposite first groove, the second bottom end length is greater than or equal to the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, the other end of the second bottom end is beyond the other end of the second bottom end or the other end of the second bottom end length is opposite to the other end of the first bottom end, and N is a positive integer; for each of the first grooves and the opposite second groove, etching from the position opposite to one end of the second bottom end to the back surface to form a first through hole, the first through hole length is greater than or equal to the first bottom end width; etching from the position opposite to the other end of the second bottom end to the back surface to form a second through hole, the second through hole length is less than the second bottom end width; etching a shallow groove on the target edge of the second through hole on the front surface to form a shallow groove, the target edge is the edge close to the other end of the first bottom end, and the quartz resonator wafer formed in the method can be folded along the shallow groove when being folded, so that the edges of the wafer are neat, without defects and excess protrusions, and the device performance is improved. BRIEF DESCRIPTION OF DRAWINGS

[0048] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The detailed description is made with reference to the accompanying drawings.

[0049] Figure 1 A structure schematic diagram of a quartz resonator wafer in the prior art after being folded is shown;

[0050] Figure 2 A step flow schematic diagram of the manufacturing method of the quartz resonator wafer in the embodiment of the application is shown;

[0051] Figures 3 to 8 A schematic diagram of forming the N first grooves and the N second grooves in the embodiment of the application is shown;

[0052] Figures 9 to 10 A schematic diagram of forming the first through hole 312 and the second through hole 313 for one resonator wafer in the embodiment of the application is shown;

[0053] Figure 11 A schematic diagram of forming the shallow groove in the embodiment of the application is shown;

[0054] Figure 12A schematic diagram showing the formation of the third via hole and the fourth via hole in an embodiment of the present application is shown.

[0055] Figure 13 A schematic diagram showing the formation of the fifth via hole in an embodiment of the present application is shown.

[0056] Figures 14 to 16 A schematic diagram showing the formation of the metal electrode in an embodiment of the present application is shown.

[0057] Figures 17 to 20 A schematic diagram showing the formation of the resonator wafer for the flat plate structure in an embodiment of the present application is shown.

[0058] Figure 21a A schematic diagram showing the structure of the quartz resonator wafer with the boss in an embodiment of the present application is shown.

[0059] Figure 21b A schematic diagram showing the structure of the quartz resonator wafer with the flat plate structure in an embodiment of the present application is shown.

[0060] Figure 22 A schematic diagram showing the structure of the quartz resonator wafer in one embodiment of the present application is shown.

[0061] Figure 23 A schematic diagram showing the structure of the quartz resonator wafer in another embodiment of the present application is shown.

[0062] Figure 24 A schematic diagram showing the shallow groove of the circular point structure in an embodiment of the present application is shown.

[0063] Figure 25 A schematic diagram showing the edge structure of the quartz resonator wafer after folding the flaps along the shallow groove of the circular point structure in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0064] Exemplary embodiments of the present disclosure will be described in detail with reference to the drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it is understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure can be more thoroughly understood, and the scope of the present disclosure can be accurately conveyed to those skilled in the art.

[0065] Embodiment One

[0066] Embodiments of the present application provide a method for manufacturing a quartz resonator wafer, as shown in Figure 2 including:

[0067] S201, providing a quartz wafer;

[0068] S202, etching N first grooves on the front surface of the quartz wafer, and etching N second grooves on the back surface of the quartz wafer, the N first grooves and the N second grooves are opposite respectively, each first groove and each second groove are in a structure of wide at the top and narrow at the bottom, the second bottom end width of each second groove is equal to the first bottom end width of the opposite first groove, and the second bottom end length is greater than or equal to the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, and the other end of the second bottom end is beyond the other end of the second bottom end or opposite to the other end of the first bottom end, N is a positive integer;

[0069] S203, for each first groove and the opposite second groove, etching from the position of the first bottom end one end and opposite to the second bottom end one end to the back surface to form a first through hole, and the first through hole length is equal to the first bottom end width;

[0070] S204, etching from the position of the second bottom end other end opposite to the first bottom end to the back surface to form a second through hole, and the second through hole length is less than the second bottom end width;

[0071] S205, etching a shallow groove on the target edge of the second through hole on the front surface, and the target edge is the edge towards the inside of the first bottom end;

[0072] S206, folding each quartz resonator wafer along the respective shallow groove to form N quartz resonator wafers.

[0073] Next, the whole process of the quartz resonator wafer is described in detail.

[0074] As shown in Figure 3 , a quartz wafer 301 is provided.

[0075] Next, as shown in Figures 4 to 8 , N first grooves 302 are etched on the front surface of the quartz wafer 301, and N second grooves 303 are etched on the back surface of the quartz wafer 301.

[0076] Among them, the N first grooves 302 and the N second grooves 303 are opposite respectively, and each first groove 302 and each second groove 303 are in a structure of wide at the top and narrow at the bottom, the second bottom end width of each second groove 302 is equal to the first bottom end width of the opposite first groove 303, and the second bottom end length is greater than the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, and the other end of the second bottom end is beyond the other end of the second bottom end, N is a positive integer.

[0077] The specific etching method is as follows:

[0078] A first chromium film layer 304 and a first gold film layer 305 are sequentially formed on the front surface of the quartz wafer from bottom to top;

[0079] A first photoresist layer 306 is formed on the first gold film layer 305, and the first photoresist layer 306 is exposed and developed to form N first etching areas 307;

[0080] The first etching areas 307 are etched to form N first grooves 302;

[0081] Similarly, the N second grooves 302 formed on the back surface are also formed in the same way.

[0082] A second chromium film layer 308 and a second gold film layer 309 are formed on the back surface of the quartz wafer 301 in sequence from bottom to top;

[0083] A second photoresist layer 310 is formed on the second gold film layer 309, and the second photoresist layer 310 is exposed and developed to form N second etching areas 311;

[0084] The N second etching areas 311 are etched to form N second grooves 303.

[0085] The thickness of the first chromium film layer 304 and the second chromium film layer 308 is 5-50 nm, and the thickness of the first gold film layer 305 and the second gold film layer 309 is greater than 100 nm. The thickness of the first photoresist 306 and the second photoresist 310 is 0.5 μm.

[0086] The first etching areas 307 are etched to form N first grooves 301, which specifically includes:

[0087] The first gold film layer 305 and the first chromium film layer 304 of the first etching areas 307 are etched by using an etching liquid to form N first grooves 302.

[0088] Furthermore, after the N first grooves 302 are formed, it further includes:

[0089] The first photoresist layer 306, the first gold film layer 305 and the first chromium film layer 304 outside the first etching areas 307 are removed, which is also removed by using an etching liquid.

[0090] The second etching areas 311 are etched to form N second grooves 303, which includes:

[0091] The second photoresist 310, the second gold film layer 309 and the second chromium film 308 of the second etching areas 311 are etched by using an etching liquid to form N second grooves 303;

[0092] After the N second grooves 303 are formed, it further includes:

[0093] The second photoresist layer 310, the second gold film layer 309 and the second chromium film layer 308 outside the second etching areas 311 are removed.

[0094] The etching solution includes a gold etching solution, a chromium etching solution, and a BOE etching solution. The gold etching solution is a mixed aqueous solution of iodine and potassium iodide, and is used to etch the first gold film layer 305 and the second gold film layer 309. The chromium etching solution is a mixed aqueous solution of nitric acid and cerium ammonium nitrate, and is used to etch the first chromium film layer 304 and the second chromium film layer 308. The BOE etching solution is a mixed solution of hydrofluoric acid, ammonium hydrogen fluoride, and a corrosion inhibitor, and is used to etch the quartz wafer 301. The etching depth is 40-190 μm, so that the frequency of the etched quartz wafer region is greater than 60 MHz, and is preferably 96 MHz. The BOE etching solution can achieve the effect that the roughness of the recess region does not change after processing.

[0095] For the stripping method of the photoresist, plasma stripping, chemical stripping, and the like can be used.

[0096] The first recess 302 and the second recess 303 formed in this way have two structures:

[0097] First, in order to form a quartz resonator wafer with a boss, in this case, the second bottom end length of the second recess 303 is greater than the first bottom end length of the first recess 302.

[0098] Second, in order to form a flat plate structure quartz resonator wafer, in this case, the second bottom end length of the second recess 303 is equal to the first bottom end length of the first recess 302.

[0099] In a specific embodiment, when the thickness of the quartz wafer is less than 10 μm, a quartz resonator wafer with a boss can be formed; when the thickness of the quartz wafer is 10-30 μm, a quartz resonator wafer with a boss or a flat plate structure quartz resonator wafer can be formed; and when the thickness of the quartz wafer is greater than 30 μm, a flat plate structure quartz resonator wafer can be formed.

[0100] The second bottom end length of the second recess 303 is greater than the first bottom end length of the first recess 302, as shown in FIG. 2B, S203 is performed to etch from the position of the first bottom end one end and opposite the second bottom end one end to the back surface, to form a first through hole 312, and the length of the first through hole 312 is equal to the first bottom end width. Figure 9

[0101] Figure 10 As shown in FIG. 2B, S204 is performed to etch from the other end of the second bottom end opposite the second bottom end to the back surface, to form a second through hole 313, and the length of the second through hole 313 is less than the second bottom end width.

[0102] ​In the process of forming the first through-hole 312 and the second through-hole 313, the same method of forming the chromium film layer, gold film layer and photoresist layer is used, followed by exposure and development, and then etching with an etching solution. Details will not be elaborated further here. The order of S204 and S203 can be reversed.

[0103] like Figure 11 As shown, in step S205, a shallow groove 314 is formed by etching at the target edge of the second through hole 313 on the front side, which is the edge near the other end of the first bottom end.

[0104] Before S205, a hollow structure can also be etched into the first groove 301, such as... Figure 12 , Figure 13 As shown, the hollow structure can block the oscillation from the oscillation region of the quartz resonator wafer to the electrode region, thereby improving the performance of the device.

[0105] Specifically, prior to S205, the method further includes: for each first groove 302 and the opposite second groove 303, at the other end of the first bottom end, a third through hole 315 and a fourth through hole 316 are formed at both ends in the width direction of the first bottom end, and both the third through hole 315 and the fourth through hole 316 are connected from the first bottom end to the opposite second bottom end, such as... Figure 12 As shown.

[0106] In another embodiment, prior to S205, a fifth through hole 317 is formed at the midpoint of the width direction of the first bottom end for each first groove 302 and the opposite second groove 303, at the other end of the first bottom end. This fifth through hole 317 connects the first bottom end to the opposite second bottom end. Figure 13 As shown.

[0107] The etching method described above is also used in the process of forming the hollow structure, so it will not be described in detail here.

[0108] Before forming the hollow structure, the process also includes forming an electrode. Specifically, after S205, the process also includes forming a first metal electrode 318 at the first bottom end of the first groove 302, the second bottom end of the second groove 303, and the outer side of the first bottom end extending from the first bottom end to the other end of the first bottom end.

[0109] Of course, the first metal electrode 318 can also be formed after the hollow structure is formed, and this is not a limitation.

[0110] Specifically, such as Figures 14 to 16As shown, the first metal electrode 318 is formed by etching in the first groove 302, in the second groove 303, and from the first bottom end to the other end of the first bottom end and outside the first groove. The etching method here is also the same as the foregoing etching method.

[0111] Finally, each of the N quartz resonator wafers is folded along the respective shallow groove 314 to form N quartz resonator wafers. The quartz resonator wafers thus obtained have no missing or protruding structures, thereby improving the performance of the device.

[0112] Moreover, due to the batch processing of the N quartz resonator wafers on the entire quartz wafer, the efficiency of obtaining quartz resonator wafers with better performance is improved, thereby improving the production efficiency.

[0113] The above is a description of the quartz resonator wafer with a boss. The following describes a flat plate structure quartz resonator wafer.

[0114] Specifically, in S202, when the second groove 303 is formed, the second bottom end length of the second groove 303 is equal to the first bottom end length of the first groove 302, as shown in Figure 17 .

[0115] Next, in S203 and S204, when the first via hole 312 and the second via hole 313 are formed, the first via hole 312 and the second via hole 313 are both located in the first groove 302, as shown in Figure 18 .

[0116] Meanwhile, a third via hole and a fourth via hole can also be formed in the first groove 302, or a fifth via hole, i.e., a hollow structure, can be directly formed.

[0117] Specifically, as shown in Figure 19 , for each first groove 302 and opposite second groove 303, two ends in the first bottom end width direction at a predetermined distance from the second via hole 303 form a sixth via hole 1901 and a seventh via hole 1902, both of which are connected from the first bottom end to the opposite second bottom end.

[0118] As shown in Figure 20 , a middle part of the first bottom end width direction at a predetermined distance from the second via hole 303 forms an eighth via hole 2001, which is connected from the first bottom end to the opposite second bottom end.

[0119] The purpose of the two kinds of openings described above is to block the oscillation of the oscillation region of the quartz resonator wafer to the electrode region, so as to improve the performance of the device.

[0120] Then, when the second bottom end length is equal to the first bottom end length, a second metal electrode is formed at the first bottom end of the first groove 302 and the second bottom end of the second groove 303, which will not be described in detail here.

[0121] Finally, the quartz resonator wafer is folded along the shallow groove 314. Thus, the quartz resonator wafer with complete edges is obtained, and the performance of the device is improved.

[0122] The shallow groove 314 is specifically a continuous strip structure or a discontinuous point structure, wherein the point in the discontinuous point structure is specifically circular, rectangular or rhombic.

[0123] The one or more technical solutions in the embodiments of the present application have at least the following technical effects or advantages:

[0124] The present application provides a manufacturing method of a quartz resonator wafer, comprising: providing a quartz wafer; etching N first grooves on the front surface of the quartz wafer, etching N second grooves on the back surface of the quartz wafer, the N first grooves and the N second grooves are opposite to each other, and each first groove and each second groove are of a structure with a wide top and a narrow bottom, the second bottom end width of each second groove is equal to the first bottom end width of the opposite first groove, and the second bottom end length is greater than or equal to the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, and the other end of the second bottom end is beyond the other end of the second bottom end or opposite to the other end of the first bottom end, N is a positive integer; for each first groove and the opposite second groove, etching from the position opposite to one end of the second bottom end and one end of the first bottom end to the back surface to form a first through hole, the first through hole length is greater than or equal to the first bottom end width; etching from the position opposite to the other end of the second bottom end to the back surface to form a second through hole, the second through hole length is less than the width of the second bottom end; etching a shallow groove on the target edge of the second through hole on the front surface, and the target edge is the edge close to the other end of the first bottom end, when the quartz resonator wafer is folded, the folding can be performed along the shallow groove, so that the edges of the wafer are neat and there is no defect and excess protrusion, thereby improving the performance of the device.

[0125] Embodiment two

[0126] The present application also provides a quartz resonator wafer, as shown in Figure 21a , Figure 21b , comprising:

[0127] oscillation regions 2101, electrode regions 2102 and frame regions 2103 arranged in sequence along the length direction of the quartz wafer;

[0128] The thickness of the electrode region 2102 is less than or equal to the thickness of the frame region 2103.

[0129] In the case that the thickness of the electrode region 2102 is less than the thickness of the frame region 2101, the junction of the back surface of the electrode region 2102 and the back surface of the frame region 2103 is transitioned by the first slope 2105, the front surface of the electrode region 2102 is coplanar with the front surface of the frame region 2103, and the front surface of the electrode region 2102 includes the second slope 2104 and the top of the front surface of the frame region 2103 is coplanar, the back surface of the electrode region 2102 is coplanar with the back surface of the oscillation region 2101;

[0130] In the case that the thickness of the electrode region 2102 is equal to the thickness of the frame region 2101, the thickness of the electrode region 2102 is equal to the thickness of the oscillation region 2101;

[0131] Further comprising: a shallow groove 314 at the junction of the front surface of the frame region 2103 and the front surface of the electrode region 2102, and a second through hole 313 with the shallow groove 314 as the edge on the frame region 2103.

[0132] Wherein, Figure 21a is a quartz resonator wafer with a boss, i.e. the thickness of the electrode region 2102 is less than the thickness of the frame region 2103.

[0133] Figure 21b is a flat plate structure quartz resonator wafer, i.e. the thickness of the electrode region 2102 is equal to the thickness of the frame region 2103.

[0134] In an optional embodiment, in the case that the thickness of the electrode region 2102 is less than the thickness of the frame region 2103, the quartz resonator wafer further comprises: a third through hole 315 and a fourth through hole 316 located at the bottom end of the second slope 2104, the third through hole 315 and the fourth through hole 316 are located at the junction of the oscillation region 1701 and the second slope 2104, and are located on both sides of the slope foot of the second slope 2104, for weakening the oscillation frequency of the oscillation region 1701 transmitted to the electrode region 2102. The third through hole 315 and the fourth through hole 316 function to reduce the oscillation frequency of the oscillation region 1701 transmitted to the electrode region 1702, to improve the performance of the device, such as Figure 22 shown.

[0135] In an optional embodiment, when the thickness of the electrode region 2102 is less than the thickness of the frame region 2103, the quartz resonator wafer further includes a fifth through-hole 317 located at the bottom end of the second ramp 2104. This fifth through-hole 317 is located at the boundary between the oscillation region 1701 and the second ramp 1704, and directly opposite the middle of the second ramp 2104, to reduce the oscillation frequency transmitted from the oscillation region to the electrode region. The function of the fifth through-hole 317 is to reduce the oscillation frequency transmitted from the oscillation region 2101 to the electrode region 2102, thereby improving device performance, such as… Figure 23 As shown.

[0136] Of course, the quartz resonator chip also includes a first metal electrode 318 located on the oscillation region 2101 and the electrode region 2102, wherein the electrode located on the oscillation region 2101 is the oscillation electrode and the electrode located on the electrode region 2102 is the pin electrode, which will not be described in detail here.

[0137] In one alternative implementation, such as Figure 19 , Figure 20 As shown, when the thickness of the electrode region 2102 is equal to the thickness of the frame region 2103, the quartz resonator wafer also includes:

[0138] The sixth through hole 1901 and the seventh through hole 1902 are located at a preset distance from the second through hole 313 and at both ends along the width direction of the quartz wafer. This preset distance is the length of the electrode region 2102; or

[0139] The eighth through hole 2001 is located at a predetermined distance from the second through hole 313 and in the middle along the width direction of the quartz wafer.

[0140] Similarly, by using the sixth through hole 1901, the seventh through hole 1902, or directly using the eighth through hole 2001, the oscillation frequency transmitted from the oscillation region 2101 to the electrode region 2102 can be reduced to improve device performance.

[0141] Of course, when the thickness of the electrode region 2102 is equal to the thickness of the frame region 2103, the quartz resonant wafer also includes a second metal electrode located on the oscillation region 2101 and the electrode region 2102, wherein the oscillation region 2101 is the oscillation electrode and the electrode region 2102 is the lead electrode. Further details will not be elaborated here.

[0142] For the two types of quartz resonator wafers mentioned above, the shallow grooves are specifically any one of the following:

[0143] Continuous strip-like structures, discontinuous dot-like structures;

[0144] Specifically, the dots in the discontinuous dotted structure can be any of the following:

[0145] circle, rectangle, and diamond.

[0146] Specifically, as shown in the shallow groove 314 discontinuous point structure, where the rectangular point for example is shown. Figure 21b

[0147] As shown in the shallow groove 314 discontinuous point structure, where the point is a circular structure. After the flap along the circular point structure of the shallow groove 314, the edge structure as described in Figure 24 Figure 25

[0148] With such a shallow groove, it can be more convenient flap.

[0149] Although preferred embodiments of the application have been described, those skilled in the art will be able to make additional changes and modifications to these embodiments once they have been given the basic inventive concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0150] Obviously, many modifications and variations of the present application are possible in light of the above teachings. It is, therefore, to be understood that within the scope of the appended claims and their equivalents, the application can be practiced otherwise than as specifically described.​​​

Claims

1. A method of fabricating a quartz resonator wafer, comprising: The method comprises the following steps: providing a quartz wafer; etching N first grooves on the front surface of the quartz wafer and etching N second grooves on the back surface of the quartz wafer, the N first grooves and the N second grooves are opposite to each other, each first groove and each second groove are in a structure of wide at the top and narrow at the bottom, the second bottom end width of each second groove is equal to the first bottom end width of the opposite first groove, and the second bottom end length is greater than or equal to the first bottom end length, one end of the second bottom end is opposite to one end of the first bottom end, the other end of the second bottom end is beyond the other end of the first bottom end or opposite to the other end of the first bottom end, and N is a positive integer; for each first groove and the opposite second groove, etching from the position of one end of the first bottom end and opposite to one end of the second bottom end to the back surface to form a first through hole, and the length of the first through hole is equal to the first bottom end width; etching from the position of the other end of the second bottom end opposite to the first bottom end to the back surface to form a second through hole, and the length of the second through hole is less than the second bottom end width; etching a shallow groove on the target edge of the second through hole on the front surface, and the target edge is the edge inside the first bottom end; for each first groove and the opposite second groove, when the second bottom end length is greater than the first bottom end length, forming a third through hole and a fourth through hole at the position of the other end of the first bottom end in the direction of the first bottom end width, and the third through hole and the fourth through hole are connected by the first bottom end to the opposite second bottom end; or when the second bottom end length is equal to the first bottom end length, forming a sixth through hole and a seventh through hole at the position of the first bottom end away from the second through hole by a preset distance in the direction of the first bottom end width, and the sixth through hole and the seventh through hole are connected by the first bottom end to the opposite second bottom end; or for each first groove and the opposite second groove, when the second bottom end length is greater than the first bottom end length, forming a fifth through hole at the middle of the first bottom end width at the position of the other end of the first bottom end, and the fifth through hole is connected by the first bottom end to the opposite second bottom end; or when the second bottom end length is equal to the first bottom end length, forming an eighth through hole at the middle of the first bottom end width away from the second through hole by a preset distance, and the eighth through hole is connected by the first bottom end to the opposite second bottom end; folding each quartz resonator wafer along the respective shallow groove to form N quartz resonator wafers.

2. The method of claim 1, wherein, After etching a shallow groove on the target edge of the second through hole on the front surface, the method further comprises the following steps: when the second bottom end length is greater than the first bottom end length, forming a first metal electrode at the first bottom end of the first groove, the second bottom end of the second groove, and the position extending from the first bottom end to the other end of the first bottom end and outside the first groove; or when the second bottom end length is equal to the first bottom end length, forming a second metal electrode at the first bottom end of the first groove and the second bottom end of the second groove.

3. The method of claim 1, wherein, The etching N first grooves on the front surface of the quartz wafer and etching N second grooves on the back surface of the quartz wafer comprises the following steps: A first chromium film layer and a first gold film layer are formed sequentially from bottom to top on the front side of the quartz wafer; A first photoresist layer is formed on the first gold film layer, and the first photoresist layer is exposed and developed to form N first etching regions. The N first etching regions are etched to form N first grooves; A second chromium film layer and a second gold film layer are formed sequentially from bottom to top on the back side of the quartz wafer; A second photoresist layer is formed on the second gold film layer, and the second photoresist layer is exposed and developed to form N second etching regions. The N second etching regions are etched to form N second grooves.

4. A quartz resonator wafer, characterized by, include: The oscillation region, electrode region, and frame region are arranged sequentially along the length of the quartz wafer; Wherein, the thickness of the electrode region is less than or equal to the thickness of the frame region; When the thickness of the electrode region is less than the thickness of the frame region, the junction between the back surface of the electrode region and the back surface of the frame region is transitioned by a first slope. The front surface of the electrode region is coplanar with the front surface of the frame region, and the front surface of the electrode region includes a second slope and a top surface coplanar with the front surface of the frame region. The back surface of the electrode region is coplanar with the back surface of the oscillation region; or When the thickness of the electrode region is equal to the thickness of the frame region, the thickness of the electrode region is equal to the thickness of the oscillation region; When the thickness of the electrode region is less than the thickness of the frame region, it also includes: The third and fourth through holes are located at the bottom of the first slope, at the boundary between the oscillation region and the second slope, and on both sides of the toe of the first slope, to reduce the oscillation frequency transmitted from the oscillation region to the electrode region; or The fifth through hole is located at the bottom of the second slope, at the junction of the oscillation region and the first slope, and directly opposite the middle of the first slope, and is used to reduce the oscillation frequency transmitted from the oscillation region to the electrode region. When the thickness of the electrode region is equal to the thickness of the frame region, it also includes: The sixth and seventh through holes are located at a predetermined distance from the second through hole and at both ends along the width direction of the quartz wafer, wherein the predetermined distance is the length of the electrode region; or An eighth through hole located at a predetermined distance from the second through hole and at the center along the width direction of the quartz wafer; It also includes: a shallow groove at the junction of the front side of the frame region and the front side of the electrode region, and a second through hole on the frame region with the shallow groove as its edge.

5. The quartz resonator wafer of claim 4 wherein, The shallow trench is specifically any of the following: Continuous strip-like structures, discontinuous dot-like structures; Specifically, the dots in the discontinuous dotted structure can be any of the following: Circles, rectangles, and rhombuses.

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