A phase shifter, an optical phased array, and a method of manufacturing an optical phased array

Abstract

The application discloses a phase shifter (100), an optical phased array (10) and a preparation method of the optical phased array (10). The phase shifter (100) comprises a signal generator (110) and a waveguide (120). The signal generator (110) is used for generating an electromagnetic wave signal. The waveguide (120) is located on a transmission path of the electromagnetic wave signal, so that the phase of light transmitted in the waveguide (120) under the action of the electromagnetic wave signal can be changed. The preparation material of the waveguide (120) comprises aluminum nitride. By setting the preparation material of the waveguide (120) as aluminum nitride, the aluminum nitride is compatible with a CMOS process and can be deposited on a substrate (130) in the form of a thin film through a magnetron sputtering method. The formed aluminum nitride thin film has a crystal lattice structure and an electro-optic effect, and can realize a faster phase modulation speed than a phase modulation speed based on a thermo-optic effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication, in particular to a phase shifter, an optical phased array and a preparation method of the optical phased array. BACKGROUND

[0002] The phase shifter can change the phase of light by modulation, and is widely used in radar, satellite communication, mobile communication and other fields. In the related technology, the waveguide is generally prepared by using silicon-based materials, such as silicon nitride, silicon oxide, SOI (silicon-on-insulator) and the like. However, since the thin film of silicon nitride and the like is generally formed by chemical vapor deposition, the formed thin film is amorphous without any crystal structure and does not have electro-optic effect, so it needs to rely on thermo-optic effect to realize electro-optic modulation, which is slow in modulation speed. The doped SOI silicon waveguide can realize electro-optic modulation by using plasma dispersion effect, but the process is complex and the cost is high. SUMMARY

[0003] Embodiments of the present application provide a phase shifter, an optical phased array and a preparation method of the optical phased array. The preparation material of the waveguide is set to aluminum nitride. The aluminum nitride is compatible with the CMOS process and can be deposited on the substrate in the form of a thin film by a magnetron sputtering method. The formed aluminum nitride thin film has a crystal lattice structure and electro-optic effect, and can realize a faster phase modulation speed than based on thermo-optic effect. The technical solution is as follows.

[0004] In a first aspect, embodiments of the present application provide a phase shifter, comprising:

[0005] a signal generator configured to generate an electromagnetic wave signal; and

[0006] a waveguide located on a transmission path of the electromagnetic wave signal, so that the phase of light transmitted in the waveguide under the action of the electromagnetic wave signal can be changed, and the preparation material of the waveguide comprises aluminum nitride.

[0007] In some embodiments, the signal generator comprises:

[0008] a first electrode structure configured to connect an excitation source; and

[0009] a second electrode structure configured to be grounded, so that the electromagnetic wave signal can be generated between the second electrode structure and the first electrode structure.

[0010] In some embodiments, further comprising:

[0011] a substrate layer; and

[0012] An insulating layer is disposed on the substrate layer, and the waveguide, the first electrode structure and the second electrode structure are connected with the insulating layer, and the waveguide is located in the insulating layer.

[0013] In some embodiments, the insulating layer has a first surface facing away from the substrate layer, and the first surface comprises:

[0014] A first region is provided with the first electrode structure; and

[0015] A second region is located on one side of the first region, and the second region is provided with a groove to form a stepped structure with the first region, and the second electrode structure is arranged in the groove.

[0016] In some embodiments, the number of the waveguide, the first electrode structure and the second electrode structure is multiple, the multiple waveguides are arranged at intervals in the insulating layer, the first surface comprises multiple first regions and multiple second regions, each first region corresponds to one waveguide, and each first region is provided with one first electrode structure; each second region is located between two adjacent first regions, and each second region is provided with the groove, and each groove is provided with one second electrode structure, and each second electrode structure can generate the electromagnetic wave signal between two adjacent first electrode structures.

[0017] In some embodiments, the insulating layer has a first surface facing away from the substrate layer, the first electrode structure is arranged on the first surface, and the second electrode structure comprises:

[0018] A first part is located in the insulating layer and corresponds to the first electrode structure, and the waveguide is arranged between the first part and the first electrode structure;

[0019] A second part is located in the insulating layer, one end of the second part is connected with the first part, and the other end of the second part extends to the first surface; and

[0020] A third part is arranged on the first surface, and the third part is connected with the end of the second part away from the first part.

[0021] In some embodiments, the waveguide, the first electrode structure and the second electrode structure are multiple in number, the multiple waveguides are spaced apart in the insulating layer, each of the first electrode structures is disposed on the first surface and corresponds to one of the waveguides, the second part and the third part of each of the second electrode structures are located between two adjacent first electrode structures, and the first parts of all the second electrode structures are connected into an integral structure, and each of the second electrode structures can generate the electromagnetic wave signal with the two adjacent first electrode structures.

[0022] In a second aspect, the embodiments of the present application provide an optical phased array, comprising:

[0023] the phase shifter described above; and

[0024] an antenna connected to the waveguide, for transmitting the electromagnetic wave signal changed by the waveguide to the outside.

[0025] In some embodiments, the preparation material of the antenna comprises aluminum nitride.

[0026] In a third aspect, the embodiments of the present application provide a preparation method of an optical phased array, comprising:

[0027] providing a substrate layer;

[0028] forming an insulating layer and a waveguide in the insulating layer on the substrate layer, the material of the waveguide comprising aluminum nitride;

[0029] forming a signal generator on the side of the insulating layer away from the substrate layer; wherein the signal generator is used to generate an electromagnetic wave signal, and the waveguide is located on the transmission path of the electromagnetic wave signal, so that the phase of the light transmitted in the waveguide under the action of the electromagnetic wave signal can be changed.

[0030] In some embodiments, the steps of forming the insulating layer on the substrate layer, forming the waveguide in the insulating layer and forming the signal generator on the side of the insulating layer away from the substrate layer comprise:

[0031] stacking a first insulating layer on the substrate layer;

[0032] stacking an aluminum nitride film layer on the surface of the first insulating layer away from the substrate layer;

[0033] etching the aluminum nitride film layer to form multiple waveguides spaced apart and antennas connected to each of the waveguides;

[0034] a second insulating layer is laminated on the surface of the aluminum nitride film layer provided on the first insulating layer, and the second insulating layer covers the aluminum nitride film layer; wherein the surface of the second insulating layer away from the first insulating layer is provided with a plurality of grooves, each of the grooves is located between two adjacent waveguides, and the insulating layer includes the first insulating layer and the second insulating layer;

[0035] a metal layer is laminated on the surface of the second insulating layer away from the first insulating layer, so that each region between two adjacent grooves is provided with a first sub-metal layer, and each groove is provided with a second sub-metal layer; wherein each first sub-metal layer serves as a first electrode structure, each second sub-metal layer serves as a second electrode structure, so that an electromagnetic wave signal can be generated between each second electrode structure and two adjacent first electrode structures, and the phase of light transmitted in the waveguide can be changed under the action of the electromagnetic wave signal.

[0036] In some embodiments, the steps of forming an insulating layer on the substrate layer, forming waveguides in the insulating layer, and forming a signal generator on the side of the insulating layer away from the substrate layer include:

[0037] a first insulating layer is laminated on the substrate layer;

[0038] a first metal layer is laminated on the surface of the first insulating layer away from the substrate layer;

[0039] a second insulating layer is laminated on the surface of the first insulating layer provided with the first metal layer, and the second insulating layer covers the first metal layer;

[0040] an aluminum nitride film layer is laminated on the surface of the second insulating layer away from the first insulating layer;

[0041] the aluminum nitride film layer is etched to form a plurality of waveguides spaced apart and antennas connected to each waveguide;

[0042] a third insulating layer is laminated on the surface of the second insulating layer away from the first insulating layer, and the third insulating layer covers the aluminum nitride film layer; wherein the third insulating layer is provided with a plurality of through holes, each of the through holes is located between two adjacent waveguides, and each of the through holes penetrates the first metal layer, and the insulating layer includes the first insulating layer, the second insulating layer and the third insulating layer;

[0043] filling a second metal layer in each of the through holes, setting a third metal layer on the surface of the third insulating layer away from the second insulating layer and corresponding to the region of each of the waveguides, and setting a fourth metal layer on the surface of the third insulating layer away from the second insulating layer and corresponding to the region of each of the second metal layers, wherein each of the third metal layers serves as a first electrode structure, each of the fourth metal layers, the second metal layer corresponding to each of the fourth metal layers, and the first metal layer together serve as a second electrode structure, so that each of the second electrode structures and the adjacent two first electrode structures can generate an electromagnetic wave signal, and the phase of the light transmitted in the waveguide can be changed under the action of the electromagnetic wave signal.

[0044] The phase shifter, the optical phased array, and the preparation method of the optical phased array provided in the embodiments of the present application set the preparation material of the waveguide as aluminum nitride. The aluminum nitride is compatible with the CMOS process and can be deposited on a substrate in the form of a thin film through a magnetron sputtering method. The aluminum nitride thin film formed has a crystal lattice structure and an electro-optic effect, and can achieve a faster phase modulation speed than a phase modulation speed based on a thermo-optic effect. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0046] Figure 1 is a cross-sectional schematic view of a phase shifter provided by the embodiments of the present application;

[0047] Figure 2 is another cross-sectional schematic view of a phase shifter provided by the embodiments of the present application;

[0048] Figure 3 is still another cross-sectional schematic view of a phase shifter provided by the embodiments of the present application;

[0049] Figure 4 is still another cross-sectional schematic view of a phase shifter provided by the embodiments of the present application;

[0050] Figure 5 is still another cross-sectional schematic view of a phase shifter provided by the embodiments of the present application;

[0051] Figure 6 is a top view schematic view of an optical phased array provided by the embodiments of the present application;

[0052] Figure 7is another top view schematic diagram of the light phased array provided by an embodiment of the present application;

[0053] Figure 8 is a flow chart of a preparation method of the light phased array provided by an embodiment of the present application;

[0054] Figure 9 is another flow chart of the preparation method of the light phased array provided by an embodiment of the present application;

[0055] Figure 10 is a structure diagram corresponding to the flow chart of Figure 9

[0056] Figure 11 is still another flow chart of the preparation method of the light phased array provided by an embodiment of the present application;

[0057] Figure 12 is a structure diagram corresponding to the flow chart of Figure 11 DETAILED DESCRIPTION

[0058] In order to make the purpose, technical solutions and advantages of the present application clearer, the following will further describe the embodiments of the present application in combination with the drawings.

[0059] The following description refers to the accompanying drawings. Unless otherwise indicated, like numbers in the different figures represent the same or similar elements. The following example embodiments described are not meant to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims.

[0060] Phase shifters can change the phase of light by modulation, and are widely used in radar, satellite communication, mobile communication and other fields. In the related art, waveguides are generally prepared from silicon-based materials, such as silicon nitride, silicon oxide, SOI (silicon-on-insulator), etc. However, since the thin film of silicon nitride, etc. is generally formed by chemical vapor deposition, the formed thin film is amorphous without any crystal structure, does not have electro-optic effect but only has thermo-optic effect, and the modulation speed is slow. The doped SOI silicon waveguide can realize modulation by using plasma dispersion effect, but the process is complex and the cost is high. Based on this, the present application provides a phase shifter, a light phased array and a preparation method of the light phased array, aiming to solve the above defects.

[0061] In a first aspect, an embodiment of the present application provides a phase shifter 100. Referring to Figures 1 to 5 ​​The phase shifter 100 comprises a signal generator 110 and a waveguide 120. The signal generator 110 is configured to generate an electromagnetic wave signal. The waveguide 120 is located on a transmission path of the electromagnetic wave signal, so that the phase of light transmitted in the waveguide 120 under the action of the electromagnetic wave signal can be changed. The waveguide 120 is made of aluminum nitride.

[0062] In the embodiment, the waveguide 120 in the phase shifter 100 is made of aluminum nitride. The aluminum nitride is compatible with the CMOS process and can be deposited on a substrate in the form of a thin film by a magnetron sputtering method. The aluminum nitride thin film has a crystal lattice structure and an electro-optic effect, and can achieve a faster phase modulation speed than a thermal-optic effect. In addition, the aluminum nitride has many similarities with silicon nitride commonly used as a material for the waveguide 120, such as a similar refractive index, similar waveguide 120 size, and similar antenna 200 size and emission efficiency. Therefore, in many cases, the parameters of the existing phase shifter 100 and optical phased array 10 based on silicon nitride can be directly applied to the phase shifter 100 and optical phased array 10 based on aluminum nitride, thereby reducing design time and cost.

[0063] The signal generator 110 can have any structure as long as it can generate an electromagnetic wave signal. For example, in some embodiments, the signal generator 110 can comprise a first electrode structure 111 and a second electrode structure 112. The first electrode structure 111 is configured to be connected to an excitation source, and the second electrode structure 112 is configured to be grounded, so that the electromagnetic wave signal can be generated between the second electrode structure 112 and the first electrode structure 111.

[0064] It can be understood that the phase shifter 100 can further comprise a substrate layer 130 and an insulating layer 140. The insulating layer 140 can be laminated on the substrate layer 130. The waveguide 120, the first electrode structure 111, and the second electrode structure 112 are connected to the insulating layer 140, and the waveguide 120 can be located in the insulating layer 140.

[0065] The electromagnetic wave signal generated by the signal generator 110 can directly vertically pass through the waveguide 120, or can have a component vertically passing through the waveguide 120. When the electromagnetic wave signal directly vertically passes through the waveguide 120, referring to FIG. 1, the electromagnetic wave signal directly vertically passes through the waveguide 120. Figure 4If a surface of the insulation layer 140 facing away from the substrate layer 130 is defined as a first surface m, the first electrode structure 111 and the second electrode structure 112 can be arranged to satisfy: the first electrode structure 111 is arranged on the first surface m, the second electrode structure 112 can include a first part 1121, the first part 1121 is located in the insulation layer 140 and corresponds to the first electrode structure 111, and the waveguide 120 is located between the first part 1121 and the first electrode structure 111. When the first part 1121 is located in the insulation layer 140, the first part 1121 is not conducive to connection with external signals. Therefore, the second electrode structure 112 can further include a second part 1122 and a third part 1123, the second part 1122 is located in the insulation layer 140, one end of the second part 1122 is connected to the first part 1121, the other end of the second part 1122 extends to the first surface m, the third part 1123 is arranged on the first surface m, and the third part 1123 is connected to the end of the second part 1122 away from the first part 1121. Through the above arrangement of the second electrode structure 112 including the first part 1121, the second part 1122 and the third part 1123, the connection between the first part 1121 and the external signals can be realized through the connection between the third part 1123 on the first surface m and the external signals, so that the electromagnetic wave signal directly vertically passing through the waveguide 120 is generated between the first electrode structure 111 and the first part 1121, and the phase modulation efficiency is higher.

[0066] When the electromagnetic wave signal has a component vertically passing through the waveguide 120, referring to Figure 1 If the surface of the insulation layer 140 facing away from the substrate layer 130 is defined as a first surface m, the first surface m can include a first area 1411 and a second area located on one side of the first area 1411, the second area is provided with a groove a to form a stepped structure with the first area 1411, and the first electrode structure 111 and the second electrode structure 112 can be arranged to satisfy: the first electrode structure 111 is arranged on the first area 1411, and the second electrode structure 112 is arranged in the groove a. Through the above arrangement, the first electrode structure 111 and the second electrode structure 112 are both formed on the outer surface of the insulation layer 140 instead of being located in the insulation layer 140, and the processing technology is simpler. Further, the waveguide 120 can be located in the insulation layer 140 and correspond to the first electrode structure 111, referring to Figure 1 and Figure 2 ; the waveguide 120 can also be located in the insulation layer 140 and correspond to the second electrode structure 112. Further, in the direction perpendicular to the first surface m, the waveguide 120 can be located between the first electrode structure 111 and the second electrode structure 112, referring to Figure 2; in the direction perpendicular to the first surface m, the waveguide 120 can also be located on the side of the second electrode structure 112 away from the first electrode structure 111, see Figure 1 .

[0067] Further, the light after phase modulation by the phase shifter 100 is transmitted to the antenna 200 through the waveguide 120, and after the light is emitted by the antenna 200, the emitted light can only realize two-dimensional scanning detection in a plane; in order to enable the emitted light to realize three-dimensional scanning detection, the number of the waveguide 120, the first electrode structure 111 and the second electrode structure 112 can be multiple, and multiple waveguides 120 emit phase-modulated light through corresponding multiple antennas 200, and multiple beams of emitted light are coupled to realize three-dimensional scanning detection. Specifically, when the second electrode structure 112 is the above-mentioned structure including the first part 1121, the second part 1122 and the third part 1123, the positions of the multiple waveguides 120, the multiple first electrode structures 111 and the multiple second electrode structures 112 can satisfy: see Figure 5 , the multiple waveguides 120 are spaced apart in the insulating layer 140, each of the first electrode structures 111 is arranged on the first surface m and corresponds to one of the waveguides 120; the second part 1122 and the third part 1123 of each of the second electrode structures 112 are located between two adjacent first electrode structures 111, and the first parts 1121 of all the second electrode structures 112 are connected into an integrated structure, and the electromagnetic wave signal can be generated between each of the second electrode structures 112 and the two adjacent first electrode structures 111. Through the above arrangement, the electromagnetic wave signal can be generated between each of the second electrode structures 112 and the two adjacent first electrode structures 111, that is, the two adjacent first electrode structures 111 can share one first electrode structure 111, so that the structure of the phase shifter 100 is more compact. At the same time, by connecting all the first parts 1121 into an integrated structure, the interconnection of the multiple third parts 1123 on the first surface m can be omitted, and the preparation process is simpler.

[0068] In some embodiments, the positions of the multiple waveguides 120, the multiple first electrode structures 111 and the multiple second electrode structures 112 can also satisfy: see Figure 3The plurality of waveguides 120 are arranged at intervals in the insulating layer 140. The first surface m includes a plurality of first regions 1411 and a plurality of second regions. Each first region 1411 corresponds to one waveguide 120, and each first region 1411 is provided with one first electrode structure 111. Each second region is located between two adjacent first regions 1411, and each second region is provided with the groove a. Each groove a is provided with one second electrode structure 112. The second electrode structure 112 can generate the electromagnetic wave signal between two adjacent first electrode structures 111. Through the above arrangement, the second electrode structure 112 can generate the electromagnetic wave signal between two adjacent first electrode structures 111, that is, two adjacent first electrode structures 111 can share one first electrode structure 111, so that the structure of the phase shifter 100 is more compact.

[0069] In a second aspect, the embodiments of the present application provide an optical phased array 10. Referring to Figure 6 and Figure 7 The optical phased array 10 includes the phase shifter 100 and the antenna 200. The antenna 200 is connected to the waveguide 120, and is used to emit the electromagnetic wave signal changed by the waveguide 120 to the outside.

[0070] The optical phased array 10 of the embodiments of the present application sets the preparation material of the waveguide 120 as aluminum nitride. The aluminum nitride is compatible with the CMOS process and can be deposited on the substrate in the form of a thin film by a magnetron sputtering method. The aluminum nitride thin film has a crystal lattice structure and an electro-optic effect, and can achieve a faster phase modulation speed than based on a thermal-optic effect, and realize large-scale integration on a chip.

[0071] In some embodiments, the preparation material of the antenna 200 can include aluminum nitride. In order to enhance the signal radiation performance, the number of antennas 200 connected to each waveguide 120 can be multiple, and the plurality of antennas 200 can be arranged at intervals. Further, in order to make the signal radiation more uniform, the plurality of antennas 200 can be arranged in an array.

[0072] In a third aspect, the embodiments of the present application provide a preparation method of an optical phased array 10. Referring to Figure 1 and Figure 8 The preparation method includes:

[0073] S101, providing a substrate layer 130. The substrate layer 130 can be a silicon substrate.

[0074] S102, forming an insulating layer 140 on the substrate layer 130 and a waveguide 120 in the insulating layer 140, wherein the waveguide 120 is made of aluminum nitride. The insulating layer 140 can be silicon dioxide, and the waveguide 120 in the insulating layer 140 can be formed by depositing an aluminum nitride film on the insulating layer 140 through a magnetron sputtering method.

[0075] S103, forming a signal generator 110 on the side of the insulating layer 140 away from the substrate layer 130. The signal generator 110 is configured to generate an electromagnetic wave signal, and the waveguide 120 is located in the transmission path of the electromagnetic wave signal, so that the phase of the light transmitted in the waveguide 120 can be changed under the action of the electromagnetic wave signal.

[0076] The preparation method of the optical phased array 10 according to the embodiments of the present application sets the material of the waveguide 120 as aluminum nitride, which is compatible with the CMOS process and can be deposited on the substrate in the form of a thin film through a magnetron sputtering method. The aluminum nitride thin film has a crystal lattice structure and an electro-optic effect, and can achieve a faster phase modulation speed than based on the thermo-optic effect, realizing large-scale integration on a chip.

[0077] In some embodiments, referring to Figure 9 and Figure 10 A preparation method of an optical phased array 10 includes:

[0078] S201, providing a substrate layer 130. The substrate layer 130 can be a silicon substrate.

[0079] S202, layering a first insulating layer 141 on the substrate layer 130. The substrate layer 130 can be a silicon substrate, and the first insulating layer 141 can be a silicon dioxide layer.

[0080] S203, layering an aluminum nitride film layer 150 on the surface of the first insulating layer 141 away from the substrate layer 130. The aluminum nitride film layer 150 can be formed by a magnetron sputtering method.

[0081] S204, etching the aluminum nitride film layer 150 to form a plurality of waveguides 120 arranged at intervals and an antenna 200 connected to each waveguide 120.

[0082] Each waveguide 120 can be connected with a plurality of antennas 200, which can be arranged at intervals. The thickness of the plurality of antennas 200 can be the same as the thickness of the waveguide 120, or can be different from the thickness of the waveguide 120. When the thickness of the plurality of antennas 200 is different from the thickness of the waveguide 120, the forming of the waveguide 120 and the antenna 200 in step S204 can be performed separately; for example, step S204 can include: S2041, etching the aluminum nitride film layer 150 to form a plurality of waveguides 120 arranged at intervals. S2042, etching the aluminum nitride film layer 150 to form a plurality of antennas 200 connected to each waveguide 120. In step S204, a coupler, a beam splitter, etc. can also be formed by etching.

[0083] S205, a second insulating layer 142 is arranged on the surface of the aluminum nitride film layer 150 arranged on the first insulating layer 141, and the second insulating layer 142 covers the aluminum nitride film layer 150. The second insulating layer 142 can be a silicon dioxide layer. The surface of the second insulating layer 142 away from the first insulating layer 141 is arranged with a plurality of grooves a, each of which is located between two adjacent waveguides 120. The plurality of grooves a on the second insulating layer 142 can be formed by photolithography. The insulating layer 140 includes the first insulating layer 141 and the second insulating layer 142.

[0084] S206, a metal layer 160 is arranged on the surface of the second insulating layer 142 away from the first insulating layer 141, so that each region between two adjacent grooves a is provided with a first sub-metal layer 161b, and each groove a is provided with a second sub-metal layer 162b. Each first sub-metal layer 161b serves as a first electrode structure 111, and each second sub-metal layer 162b serves as a second electrode structure 112, so that an electromagnetic wave signal can be generated between each second electrode structure 112 and two adjacent first electrode structures 111, and the phase of light transmitted in the waveguide 120 can be changed under the action of the electromagnetic wave signal.

[0085] Step S206 can include: S2061, arranging a metal layer 160 on the surface of the second insulating layer 142 away from the first insulating layer 141; S2062, stripping the metal layer 160, so that each region between two adjacent grooves a is provided with a first sub-metal layer 161b, and each groove a is provided with a second sub-metal layer 162b.

[0086] The preparation method of the optical phased array 10 in the embodiment of the present application is that the preparation material of the waveguide 120 is set as aluminum nitride, the aluminum nitride is compatible with the CMOS process and can be deposited on the substrate in the form of a thin film through a magnetron sputtering method, the aluminum nitride thin film formed has a crystal lattice structure and an electro-optic effect, and can realize a faster phase modulation speed than based on a thermal-optic effect, and realize large-scale integration on a chip. By sequentially and alternately arranging the first electrode structure 111 and the second electrode structure 112, each second electrode structure 112 can generate an electromagnetic wave signal between two adjacent first electrode structures 111, that is, two adjacent first electrode structures 111 can share one first electrode structure 111, so that the structure of the phase shifter 100 is more compact, and the structure of the optical phased array 10 is more compact.

[0087] In some embodiments, referring to Figure 11 and Figure 12 A preparation method of an optical phased array 10 includes:

[0088] S301, providing a substrate layer 130. The substrate layer 130 can be a silicon substrate.

[0089] S302, a first insulating layer 141 is arranged on the substrate layer 130. The substrate layer 130 can be a silicon substrate. The first insulating layer 141 can be a silicon dioxide layer.

[0090] S303, a first metal layer 161 is arranged on the surface of the first insulating layer 141 away from the substrate layer 130.

[0091] S304, a second insulating layer 142 is arranged on the surface of the first insulating layer 141 where the first metal layer 161 is arranged, and the second insulating layer 142 covers the first metal layer 161. The second insulating layer 142 can be a silicon dioxide layer.

[0092] S305, an aluminum nitride film layer 150 is arranged on the surface of the second insulating layer 142 away from the first insulating layer 141. The aluminum nitride film layer 150 can be formed by a magnetron sputtering method.

[0093] S306, the aluminum nitride film layer 150 is etched to form a plurality of waveguides 120 arranged at intervals and an antenna 200 connected with each waveguide 120.

[0094] Each waveguide 120 can be connected with a plurality of antennas 200, and the plurality of antennas 200 can be arranged at intervals. The thickness of the plurality of antennas 200 can be the same as the thickness of the waveguide 120, or the thickness of the plurality of antennas 200 can be different from the thickness of the waveguide 120. When the thickness of the plurality of antennas 200 is different from the thickness of the waveguide 120, the formation of the waveguide 120 and the antenna 200 in step S306 can be performed separately; for example, step S306 can include: S3061, etching the aluminum nitride film layer 150 to form a plurality of waveguides 120 arranged at intervals. S3062, etching the aluminum nitride film layer 150 to form a plurality of antennas 200 connected to each waveguide 120. In step S204, the coupler, beam splitter, etc. can also be formed by etching.

[0095] S307, the third insulating layer 143 is arranged on the surface of the second insulating layer 142 away from the first insulating layer 141, and the third insulating layer 143 covers the aluminum nitride film layer 150. The third insulating layer 143 can be a silicon dioxide layer. The third insulating layer 143 is provided with a plurality of through holes 1431, each of the through holes 1431 is located between two adjacent waveguides 120, and each of the through holes 1431 penetrates the first metal layer 161. The through holes 1431 on the third insulating layer 143 can be formed by photolithography. The insulating layer 140 includes the first insulating layer 141, the second insulating layer 142, and the third insulating layer 143.

[0096] S308, filling the second metal layer 162 in each of the through holes 1431, arranging a third metal layer 163 on the surface of the third insulating layer 143 away from the second insulating layer 142 and corresponding to each of the waveguides 120, and arranging a fourth metal layer 164 on the surface of the third insulating layer 143 away from the second insulating layer 142 and corresponding to each of the second metal layers 162. Each of the third metal layers 163 serves as a first electrode structure 111, each of the fourth metal layers 164, the second metal layer 162 corresponding to each of the fourth metal layers 164, and the first metal layer 161 together serve as a second electrode structure 112, so that each of the second electrode structures 112 and the adjacent two first electrode structures 111 can generate an electromagnetic wave signal, and the phase of the light transmitted in the waveguide 120 can be changed under the action of the electromagnetic wave signal.

[0097] Step S308 can include: S3081, filling the second metal layer 162 in each of the through holes 1431; S3082, laminating a metal layer on the surface of the third insulating layer 143 away from the second insulating layer 142; S3083, stripping the metal layer, so that each of the waveguides 120 is respectively provided with a third metal layer 163, and each of the second metal layers 162 is respectively provided with a fourth metal layer 164.

[0098] The preparation method of the optical phased array 10 of the embodiment of the present application sets the preparation material of the waveguide 120 as aluminum nitride. The aluminum nitride is compatible with the CMOS process and can be deposited on the substrate in the form of a thin film through a magnetron sputtering method. The aluminum nitride thin film has a crystal lattice structure and an electro-optic effect, and can achieve a faster phase modulation speed than based on a thermal-optic effect, and realize large-scale integration on a chip. By alternately arranging the first electrode structure 111 and the second electrode structure 112 in sequence, each second electrode structure 112 can generate an electromagnetic wave signal between two adjacent first electrode structures 111, that is, two adjacent first electrode structures 111 can share one first electrode structure 111, so that the structure of the phase shifter 100 is more compact, and the structure of the optical phased array 10 is more compact. At the same time, since the first metal layer 160 is an integral structure, the interconnection of the plurality of fourth metal layers 160 on the first surface m can be omitted, and the preparation process is simpler.

[0099] In the description of the present application, it should be understood that the terms "first", "second" and the like are only used for the purpose of description and cannot be understood as indicating or implying relative importance. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances. In addition, in the description of the present application, "a plurality of" means two or more, unless otherwise specified. "And / or", which describes the association relationship between the associated objects, means that there can be three relationships, for example, A and / or B can mean that there are three cases of A alone, A and B together, and B alone. The character " / " generally represents that the associated objects before and after it are in an "or" relationship.

[0100] The above disclosure is only the preferred embodiment of the present application, and of course cannot limit the scope of the rights of the present application, so the equivalent changes made according to the claims of the present application still fall within the scope covered by the present application.

Claims

1. A phase shifter, characterized in that, include: A signal generator is used to generate electromagnetic wave signals; The signal generator includes a first electrode structure and a second electrode structure, wherein the first electrode structure is used to connect to an excitation source; The second electrode structure is used for grounding, thereby enabling the generation of the electromagnetic wave signal between the second electrode structure and the first electrode structure; A waveguide is located on the transmission path of the electromagnetic wave signal so that the phase of the light rays transmitted in the waveguide can be changed under the action of the electromagnetic wave signal. The waveguide is made of aluminum nitride. basal layer; as well as An insulating layer is stacked on the substrate layer, and the waveguide, the first electrode structure and the second electrode structure are all connected to the insulating layer. The waveguide is located inside the insulating layer. The insulating layer has a first surface facing away from the substrate layer, and the first electrode structure is disposed on the first surface; The second electrode structure includes a first part, a second part, and a third part. The first part is located within the insulating layer and corresponds to the first electrode structure. A waveguide is disposed between the first part and the first electrode structure. The second part is located within the insulating layer. One end of the second part is connected to the first part, and the other end of the second part extends to the first surface. The third part is disposed on the first surface, and the third part is connected to the end of the second part away from the first part; The waveguide, the first electrode structure, and the second electrode structure are all multiple. The multiple waveguides are spaced apart in the insulating layer. Each first electrode structure is disposed on the first surface and corresponds to one of the waveguides. The second part and the third part of each second electrode structure are located between two adjacent first electrode structures, and the first parts of all the second electrode structures are connected to form an integral structure. Each second electrode structure can generate the electromagnetic wave signal between itself and two adjacent first electrode structures.

2. The phase shifter as described in claim 1, characterized in that, The insulating layer has a first surface facing away from the substrate layer, the first surface comprising: A first region, wherein the first electrode structure is disposed; and The second region is located on one side of the first region. The second region is provided with a groove to form a stepped structure with the first region. The second electrode structure is provided in the groove.

3. The phase shifter as described in claim 2, characterized in that, The waveguide, the first electrode structure, and the second electrode structure are all multiple. The multiple waveguides are spaced apart within the insulating layer. The first surface includes multiple first regions and multiple second regions. Each first region corresponds to one waveguide, and each first region is provided with one first electrode structure. Each second region is located between two adjacent first regions, and each second region is provided with a groove. Each groove is provided with one second electrode structure. Each second electrode structure can generate the electromagnetic wave signal between itself and two adjacent first electrode structures.

4. An optical phased array, characterized in that, include: Phase shifter as claimed in any one of claims 1 to 3; as well as An antenna, connected to the waveguide, is used to transmit the electromagnetic wave signal, which has been altered by the waveguide, to the outside world.

5. The optical phased array as described in claim 4, characterized in that, The antenna is made of aluminum nitride.

6. A method for fabricating an optical phased array as described in claim 4 or 5, characterized in that, include: Provide a base layer; as well as An insulating layer is formed on the substrate, a waveguide is formed in the insulating layer, and a signal generator is formed on the side of the insulating layer away from the substrate. The waveguide is made of aluminum nitride. The signal generator is used to generate an electromagnetic wave signal. The waveguide is located on the transmission path of the electromagnetic wave signal so that the phase of the light transmitted in the waveguide can be changed under the action of the electromagnetic wave signal.

7. The preparation method according to claim 6, characterized in that, The steps of forming an insulating layer on the substrate, forming a waveguide in the insulating layer, and forming a signal generator on the side of the insulating layer away from the substrate include: A first insulating layer is stacked on the substrate layer; An aluminum nitride film layer is stacked on the surface of the first insulating layer opposite to the substrate layer; The aluminum nitride film is etched to form a plurality of waveguides spaced apart and an antenna connected to each waveguide; A second insulating layer is stacked on the surface of the aluminum nitride film layer in the first insulating layer, and the second insulating layer covers the aluminum nitride film layer; wherein, the surface of the second insulating layer away from the first insulating layer is provided with a plurality of grooves at intervals, each groove being located between two adjacent waveguides, and the insulating layer includes the first insulating layer and the second insulating layer; A metal layer is stacked on the surface of the second insulating layer away from the first insulating layer, such that a first sub-metal layer is disposed in the area between each two adjacent grooves, and a second sub-metal layer is disposed in each groove; wherein each first sub-metal layer serves as a first electrode structure, and each second sub-metal layer serves as a second electrode structure, so that each second electrode structure can generate an electromagnetic wave signal with the two adjacent first electrode structures, and the phase of the light transmitted in the waveguide can be changed under the action of the electromagnetic wave signal.

8. The preparation method according to claim 6, characterized in that, The steps of forming an insulating layer on the substrate, forming a waveguide in the insulating layer, and forming a signal generator on the side of the insulating layer away from the substrate include: A first insulating layer is stacked on the substrate layer; A first metal layer is stacked on the surface of the first insulating layer that is away from the substrate layer; A second insulating layer is stacked on the surface of the first metal layer in the first insulating layer, such that the second insulating layer covers the first metal layer; An aluminum nitride film layer is stacked on the surface of the second insulating layer opposite to the first insulating layer; The aluminum nitride film is etched to form a plurality of waveguides spaced apart and an antenna connected to each waveguide; A third insulating layer is stacked on the surface of the second insulating layer away from the first insulating layer, and the third insulating layer covers the aluminum nitride film layer; wherein, the third insulating layer is provided with a plurality of through holes, each of the through holes is located between two adjacent waveguides, and each of the through holes penetrates to the first metal layer, and the insulating layer includes the first insulating layer, the second insulating layer and the third insulating layer; A second metal layer is filled in each of the vias. A third metal layer is disposed on the surface of the third insulating layer opposite to the second insulating layer and corresponding to the region of each waveguide. A fourth metal layer is disposed on the surface of the third insulating layer opposite to the second insulating layer and corresponding to the region of each second metal layer. Each third metal layer serves as a first electrode structure. Each fourth metal layer, the second metal layer corresponding to each fourth metal layer, and the first metal layer together serve as a second electrode structure. This allows each second electrode structure to generate an electromagnetic wave signal with two adjacent first electrode structures, and the phase of the light transmitted in the waveguide can change under the action of the electromagnetic wave signal.

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