晶圆键合方法
By adjusting the radial dimension of the wafer using a temperature control device, the problem of insufficient alignment accuracy during wafer bonding was solved, improving product performance and yield while reducing costs.
CN115064453BActive Publication Date: 2026-07-17YANGTZE MEMORY TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- YANGTZE MEMORY TECH CO LTD
- Filing Date
- 2022-05-24
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
During the manufacturing process of 3D NAND memory devices, the difference in expansion rate of different parts of the wafer during wafer bonding leads to a decrease in alignment accuracy, which affects product performance and yield.
Method used
The radial dimension of the wafer to be bonded is adjusted by a temperature control device, such as a cooling tray, to control the wafer temperature, thereby reducing radial dimension differences and improving alignment accuracy.
Benefits of technology
It improves the alignment accuracy of wafer bonding, enhances product performance and yield, and reduces costs without requiring large-scale adjustments to existing equipment.
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Figure CN115064453B_ABST
Abstract
本申请公开了一种晶圆键合方法,包括:对多个待键合晶圆进行表面预处理;将所述多个待键合晶圆中的至少一个待键合晶圆置于温控装置上,通过调整所述温控装置的温度改变所述至少一个待键合晶圆的径向尺寸;将所述多个待键合晶圆移入键合腔内进行键合。通过控制所述温控装置的温度改变至少一个待键合晶圆的径向尺寸,能够减小多个待键合晶圆径向尺寸的差异,提高晶圆键合的对准精度,从而提高产品的性能和良率。
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