Optical modulation devices and laser equipment

Abstract

Provided are an optical modulator and laser device. The optical modulator includes: a waveguide layer comprising a waveguide body and a plurality of nanowaveguides embedded within the waveguide body and extending along a first direction; a first electrode layer located on one side of the waveguide layer, comprising a plurality of first electrodes extending along the first direction and arranged in a one-to-one correspondence with the plurality of nanowaveguides; and a second electrode layer located on a side of the waveguide layer facing away from the first electrode layer, comprising a plurality of second electrodes extending along the first direction and arranged in a one-to-one correspondence with the plurality of first electrodes, each second electrode being configured to apply a modulation voltage to the corresponding nanowaveguide to change its refractive index. The technical solutions of the disclosed embodiments can improve the optical performance of laser devices and expand the functionality of laser devices.

Description

Technical Field

[0001] The present disclosure relates to the field of laser technology, and in particular to an optical modulation device and a laser device. Background Art

[0002] A laser is a device that emits laser light. Its three main functional components are a pump source, a gain medium, and a resonant cavity. The pump source provides the laser's light source, while the gain medium (also known as the working medium) absorbs the energy provided by the pump source and amplifies the light. The resonant cavity serves as the circuit between the pump source and the gain medium, and the cavity oscillates in a selected mode to produce laser light.

[0003] The pump source, as an energy source, generates photons to excite the gain medium. The photons emitted by the pump source pump the particles in the gain medium from the ground state to a higher energy level, achieving population inversion. Excitation mechanisms include optical excitation (optical pumping), gas discharge excitation, chemical excitation, and nuclear excitation. Currently, high-power semiconductor lasers (LDs) are commonly used as pump sources, primarily converting electrical energy into light energy. The gain medium achieves population inversion and amplifies light, while also determining the wavelength of the output laser.

[0004] Gain media can be liquids, gases, or solids. Liquids include organic solutions, gases like carbon dioxide, and solids like ruby. The fundamental requirement for a gain medium is that it generates photons upon stimulation rather than converting light into heat. The particles must be relatively isolated to allow transitions between energy levels. The resonant cavity primarily serves to "store" and "purify" the laser light.

[0005] A resonant cavity typically consists of two mirrors, but couplers can also be used to construct various ring resonators. Photons bounce back and forth between the mirrors, continuously inducing stimulated emission in the gain medium, generating high-intensity laser light. Furthermore, the resonant cavity ensures that the photons within the cavity have consistent frequency / wavelength, phase, and direction of travel, resulting in excellent directivity and coherence in the laser light.

[0006] How to improve the optical performance of laser equipment is a technical problem that those skilled in the art have been working on solving. Summary of the Invention

[0007] Embodiments of the present disclosure provide a light modulation device and a laser device to improve the optical performance of the laser device.

[0008] According to one aspect of the present disclosure, an optical modulation device is provided, comprising: a waveguide layer comprising a waveguide body and a plurality of nanowaveguides embedded in the waveguide body and extending along a first direction; a first electrode layer, located on one side of the waveguide layer, comprising a plurality of first electrodes extending along the first direction and arranged in a one-to-one correspondence with the plurality of nanowaveguides; and a second electrode layer, located on a side of the waveguide layer facing away from the first electrode layer, comprising a plurality of second electrodes extending along the first direction and arranged in a one-to-one correspondence with the plurality of first electrodes, each second electrode being configured together with a corresponding first electrode to apply a modulation voltage to a corresponding nanowaveguide to change its refractive index.

[0009] In some embodiments, the plurality of nanowaveguides are arranged in a single layer and are arranged sequentially along a second direction intersecting the first direction; alternatively, the plurality of nanowaveguides are arranged in multiple layers, each layer including a plurality of nanowaveguides arranged sequentially along a second direction intersecting the first direction, and the nanowaveguides of at least two layers do not overlap in the thickness direction of the waveguide layer.

[0010] In some embodiments, a plurality of nanowaveguides are arranged in a single layer and are arranged sequentially along a second direction intersecting the first direction; the optical modulator further comprises a first wire layer, a substrate, a first insulating layer, a second insulating layer, a cladding, and a second wire layer, wherein the first wire layer, the substrate, the first insulating layer, the first electrode layer, the waveguide layer, the second electrode layer, the second insulating layer, the cladding, and the second wire layer are stacked on each other, wherein the first wire layer comprises a plurality of first wires arranged in one-to-one correspondence with the plurality of first electrodes, each first wire being connected to the corresponding first electrode through a via hole on the substrate and the first insulating layer; the second wire layer comprises a plurality of second wires arranged in one-to-one correspondence with the plurality of second electrodes, each second wire being connected to the corresponding second electrode through a via hole on the cladding and the second insulating layer.

[0011] In some embodiments, the cladding includes a first trench and a second trench extending along a first direction, and orthographic projections of the plurality of first electrodes, the plurality of nanowaveguides, and the plurality of second electrodes on the substrate are located between the orthographic projections of the first trench and the second trench on the substrate.

[0012] In some embodiments, the cladding includes a slab portion and a raised portion located on a side of the slab portion facing away from the second insulating layer, and the orthographic projections of the plurality of first electrodes, the plurality of nanowaveguides, and the plurality of second electrodes on the substrate are located within the orthographic projection of the raised portion on the substrate.

[0013] In some embodiments, the material of the waveguide body includes at least one of silicon, silicon oxide, silicon nitride, gallium arsenide, aluminum gallium arsenide, or indium gallium arsenide.

[0014] In some embodiments, the material of the waveguide body includes a gain medium material.

[0015] In some embodiments, the material of the nanowaveguide includes at least one of lithium niobate crystal, gallium arsenide crystal, lithium tantalate crystal, or potassium dihydrogen phosphate crystal.

[0016] In some embodiments, the material of the first electrode layer and the second electrode layer includes at least one of indium tin oxide or indium zinc oxide.

[0017] According to one aspect of the present disclosure, a laser device is provided, comprising: a laser emitting device, and an optical modulation device according to the aforementioned aspect located on the light emitting side of the laser emitting device, wherein the first direction is the light emitting direction of the laser emitting device.

[0018] In some embodiments, the optical modulator and the laser emitting device are fabricated on the same substrate; or the optical modulator and the laser emitting device are discrete devices, and the light emitting end face of the laser emitting device is directly optically coupled to the light incident end face of the optical modulator; or the optical modulator and the laser emitting device are discrete devices, and the light emitting end face of the laser emitting device is optically coupled to the light incident end face of the optical modulator through a lens or a metasurface device.

[0019] In some embodiments, the laser emitting device is a gas laser device, a solid-state laser device, a semiconductor laser device, or a dye laser device.

[0020] According to one or more embodiments of the present disclosure, active modulation of the outgoing light beam can be achieved, such as flexible modulation of the deflection, phase, wavelength, intensity or polarization, beam shape, etc. of the outgoing light beam, thereby effectively improving and expanding the optical performance of the laser device.

[0021] These and other aspects of the disclosure will be apparent from and elucidated with reference to the embodiments described hereinafter. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Further details, features and advantages of the present disclosure are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0023] Figure 1 is a schematic cross-sectional view of an optical modulation device according to some embodiments of the present disclosure along a thickness direction and a first direction;

[0024] Figure 2 The optical modulation device of some embodiments of the present disclosure is Figure 1 Schematic diagram of the cross section along the AA direction;

[0025] Figure 3 The optical modulation device of some embodiments of the present disclosure is Figure 1 Schematic diagram of the cross section along the AA direction;

[0026] Figure 4 is a schematic cross-sectional view of a laser device according to some embodiments of the present disclosure along the thickness direction and the light emitting direction;

[0027] Figure 5 is a schematic cross-sectional view of a laser device according to some embodiments of the present disclosure along the thickness direction and the light emitting direction; and

[0028] Figure 6 It is a schematic cross-sectional view of the laser device according to some embodiments of the present disclosure along the thickness direction and the light emitting direction. DETAILED DESCRIPTION

[0029] Hereinafter, only certain exemplary embodiments are briefly described. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and description are to be considered as illustrative in nature and not restrictive.

[0030] It will be understood that although the terms first, second, third, etc. may be used to describe various elements, components, areas, layers and / or parts in this article, these elements, components, areas, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer or part from another element, component, area, layer or part. Therefore, the first element, component, area, layer or part discussed below may be referred to as the second element, component, area, layer or part without departing from the teachings of the present disclosure.

[0031] Spatially relative terms such as "below," "beneath," "lower," "beneath," "above," "upper," and the like may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. For example, if the elements in the figures are flipped, an element described as "below" or "beneath" or "beneath" another element or feature would be oriented "above" the other element or feature. Thus, the exemplary terms "below" and "beneath" may encompass both orientations of "above" and "beneath." Terms such as "before" or "before" and "after" or "followed by" may similarly be used, for example, to indicate the order in which light passes through the elements. Elements may be oriented in other ways (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0032] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "one", "an" and "the" are intended to also include plural forms, unless the context clearly indicates otherwise. It will be further understood that the terms "include" and / or "comprise" specify the presence of the features, wholes, steps, operations, elements and / or parts when used in this specification, but do not exclude the presence of one or more other features, wholes, steps, operations, elements, parts and / or their groups or add one or more other features, wholes, steps, operations, elements, parts and / or their groups. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of A and B" refers to only A, only B, or both A and B.

[0033] It will be understood that when an element or layer is referred to as being “on,” “connected to,” “coupled to,” or “adjacent to” another element or layer, it can be directly on, directly connected to, directly coupled to, or directly adjacent to another element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “directly adjacent to” another element or layer, no intervening elements or layers are present. However, in no case should “on” or “directly on” be interpreted as requiring that one layer completely cover the underlying layer.

[0034] Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. As such, variations in the illustrated shapes, for example as a result of manufacturing techniques and / or tolerances, should be expected. Therefore, embodiments of the present disclosure should not be interpreted as being limited to the specific shapes of the regions illustrated herein, but should include shape deviations, for example, due to manufacturing. Therefore, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to represent the actual shapes of the regions of the illustrated elements and are not intended to limit the scope of the present disclosure.

[0035] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the relevant art and / or the context of this specification, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0036] As used herein, the term "substrate" may refer to the substrate of a cut wafer or may indicate the substrate of an uncut wafer. Similarly, the terms chip and die may be used interchangeably unless such interchange would cause a conflict. It should be understood that the term "layer" includes thin films and should not be interpreted as indicating vertical or horizontal thickness unless otherwise specified.

[0037] Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as their working medium. Semiconductor lasers are the most practical type of laser. They are compact, have long lifespans, can be pumped by injected current, and have operating voltages and currents compatible with integrated circuits, making them easy to integrate into a single chip. Furthermore, semiconductor lasers can be directly modulated using current at frequencies up to GHz to achieve high-speed modulated laser output. Based on these advantages, semiconductor lasers have found widespread application in laser communications, optical storage, optical gyroscopes, laser printing, rangefinders, and radar.

[0038] In some related technologies, a metasurface device is installed on the light-emitting end facet of a semiconductor laser, allowing it to modulate the shape and direction of the emitted beam. A metasurface is an artificial two-dimensional material with a structural size smaller than the wavelength. Its basic structure consists of nanostructured units at the nanometer scale. Metasurfaces can flexibly and effectively control the polarization, amplitude, phase, polarization mode, and propagation mode of electromagnetic waves, while being extremely light and thin.

[0039] The inventors of the present disclosure have noticed that although the above-mentioned related technologies can utilize metasurface devices to modulate the outgoing laser beam, they are restricted by the specific structural design of the metasurface devices, and the modulation effect is passive and single. For the same device, the modulation effect cannot be flexibly adjusted according to actual needs, resulting in great limitations on the functions and optical performance of semiconductor lasers.

[0040] Based on this, the embodiments of the present disclosure provide a light modulation device and a laser device to improve the optical performance of the laser device.

[0041] like Figure 1 and Figure 2As shown, some embodiments of the present disclosure provide an optical modulation device 20 comprising a waveguide layer 25, a first electrode layer 24, and a second electrode layer 26. The waveguide layer 25 comprises a waveguide body 251 and a plurality of nanowaveguides 252 embedded within the waveguide body 251 and extending along a first direction. The first electrode layer 24 is located on one side of the waveguide layer 25 and comprises a plurality of first electrodes 241 extending along the first direction and arranged in a one-to-one correspondence with the plurality of nanowaveguides 252. The second electrode layer 26 is located on a side of the waveguide layer 25 facing away from the first electrode layer 24 and comprises a plurality of second electrodes 261 extending along the first direction and arranged in a one-to-one correspondence with the plurality of first electrodes 241. Each second electrode 261 is configured to apply a modulation voltage to a corresponding nanowaveguide 252 to change its refractive index, in conjunction with a corresponding first electrode 241.

[0042] The presently disclosed embodiments do not limit the specific material of the waveguide body 251; it may be any conventional waveguide material, such as silicon, silicon oxide, silicon nitride, gallium arsenide, aluminum gallium arsenide, or indium gallium arsenide. Furthermore, the waveguide body 251 may also be made of a gain medium material that amplifies optical power, such as doped polycrystalline ceramic.

[0043] The width of nanowaveguide 252 is smaller than the operating wavelength and is on the subwavelength scale. In the disclosed embodiment, nanowaveguide 252 is made of electro-optic material, which can produce an electro-optic effect. The electro-optic effect refers to the fact that when a voltage is applied to an electro-optic material, the material's refractive index changes, which in turn causes the properties of the light wave passing through the material to change. The electro-optic effect can be used to modulate optical signal parameters such as phase, amplitude, intensity, polarization, and beam shape. In the disclosed embodiment, the material of nanowaveguide 252 can include at least one of lithium niobate crystal, gallium arsenide crystal, lithium tantalate crystal, or potassium dihydrogen phosphate crystal.

[0044] In the embodiment of the present disclosure, when a modulation voltage is applied to the nanowaveguide 252 of the electro-optical material through the first electrode 241 and the second electrode 261, the refractive index of the nanowaveguide 252 changes with the signal of the modulation voltage. The refractive index of different nanowaveguides 252 can be flexibly adjusted according to the light output requirements, so that active modulation of the output light beam can be achieved, such as flexible modulation of the deflection, phase, wavelength, intensity, polarization, beam shape, etc. of the output light beam. Compared with related technologies, it can effectively improve and expand the optical performance of the laser equipment.

[0045] like Figure 2As shown, in some embodiments of the present disclosure, multiple nanowaveguides 252 are arranged in a single layer and arranged sequentially along a second direction intersecting the first direction, that is, in a one-dimensional arrangement, wherein the second direction can be orthogonal to the first direction or at a set angle. The optical modulator 20 includes a first wire layer 21, a substrate 22, a first insulating layer 23, a first electrode layer 24, a waveguide layer 25, a second electrode layer 26, a second insulating layer 27, a cladding layer 28, and a second wire layer 29, which are sequentially arranged and stacked one on top of another. The first wire layer 21 includes a plurality of first wires 211 arranged in a one-to-one correspondence with the plurality of first electrodes 241. Each first wire 211 is connected to a corresponding first electrode 241 through a via in the first substrate 22 and the first insulating layer 23. The second wire layer 29 includes a plurality of second wires 291 arranged in a one-to-one correspondence with the plurality of second electrodes 261. Each second wire 291 is connected to a corresponding second electrode 261 through a via in the cladding layer 28 and the second insulating layer 27. The first conductive line 211 and the second conductive line 291 are used to realize signal transmission. The specific pattern design and extension direction thereof are not limited and are not limited to extending along the first direction.

[0046] In some embodiments of the present disclosure, the materials of the first electrode layer 24 and the second electrode layer 26 may include at least one of indium tin oxide (ITO) and indium zinc oxide (IZO). Furthermore, the materials of the first conductive layer 21 and the second conductive layer 29 may also include at least one of indium tin oxide (ITO) and indium zinc oxide (IZO). These materials have transparent conductive properties, which can minimize the impact on the light transmission efficiency of the device.

[0047] In some embodiments, the first conductive layer 21 and the second conductive layer 29 may also be made of an opaque conductive material, for example, the material includes at least one of aluminum-neodymium alloy, aluminum, copper, molybdenum, molybdenum-tungsten alloy, or chromium.

[0048] The waveguide layer 25 can be made in a single layer or in multiple layers. In addition to being arranged in a single layer in one dimension, the multiple nanowaveguides 252 can also be arranged in a two-dimensional manner. In some embodiments of the present disclosure, the multiple nanowaveguides can also be arranged in multiple layers in the waveguide body, each arrangement layer includes multiple nanowaveguides, and the multiple nanowaveguides located in the same arrangement layer are arranged in sequence along a second direction that intersects the first direction, and the nanowaveguides of at least two arrangement layers do not overlap in the thickness direction of the waveguide layer, wherein the second direction can be orthogonal to the first direction or at a set angle. By arranging nanowaveguides in multiple layers, a more compact layout of the nanowaveguides can be achieved and the modulation efficiency and modulation effect of light can be enhanced.

[0049] like Figure 2As shown, in some embodiments of the present disclosure, the cladding 28 includes a first groove 281 and a second groove 282 extending along a first direction. The orthographic projections of the plurality of first electrodes 241, the plurality of nanowaveguides 252, and the plurality of second electrodes 261 on the substrate 22 are located between the orthographic projections of the first groove 281 and the second groove 282 on the substrate 22. The cladding 28 covers the outer surface of the waveguide layer 25 and can be made of glass or other transparent materials with a relatively low refractive index. Through its structural design, it can confine light propagation to a specific area. In this embodiment, the design of the first groove 281 and the second groove 282 can guide light to propagate primarily in the area between them, thereby improving the modulation efficiency of the optical modulation device 20.

[0050] like Figure 3 As shown, in other embodiments of the present disclosure, the cladding 28 may also adopt a ridge-convex structure design, including a flat plate portion 283 and a raised portion 284 located on the side of the flat plate portion 283 facing away from the second insulating layer 27. The orthographic projections of the plurality of first electrodes 241, the plurality of nanowaveguides 252, and the plurality of second electrodes 261 on the substrate 22 are located within the orthographic projections of the raised portion 284 on the substrate 22. The design of the raised portion 284 can primarily confine the propagation of light to the area guided by it, thereby improving the modulation efficiency of the optical modulation device 20.

[0051] like Figure 4 As shown, an embodiment of the present disclosure also provides a laser device 100, comprising: a laser emitting device 10, and an optical modulation device 20 of any of the aforementioned embodiments located on the light emitting side of the laser emitting device 10, wherein the first direction is also the light emitting direction of the laser emitting device 10.

[0052] The laser emitting device 10 and the optical modulator 20 are cascaded, and their respective structures and electrodes can be configured independently without interfering with each other. Because the optical modulator 20 can actively modulate the emitted light beam, the optical performance of the laser device 100 can be flexibly adjusted, expanded, and improved as needed, resulting in optimal optical performance.

[0053] The specific type of the laser emitting device 10 is not limited. For example, the laser emitting device can be a gas laser device, a solid-state laser device, a semiconductor laser device, or a dye laser device. In some specific embodiments, the laser emitting device 10 is a DFB laser (Distributed Feedback Laser) with a built-in Bragg grating, which is a side-emitting semiconductor laser device. The resonant cavity of the laser emitting device 10 is, for example, an FP resonant cavity (Fabry–Pérot cavity), which can achieve wavelength adjustment and control.

[0054] like Figure 4 As shown, in some embodiments of the present disclosure, the optical modulator 20 and the laser emitting device 10 are fabricated on the same substrate 22. Some structural layers of the optical modulator 20 can extend into the region where the laser emitting device 10 is located, thereby being shared with the laser emitting device 10. That is, the optical modulator 20 and the laser emitting device 10 are integrally fabricated. The aforementioned waveguide body 251 of the optical modulator 20 can be made of the same gain medium material as that of the laser emitting device 10, and thus can be fabricated on the same layer as the gain medium layer of the laser emitting device 10.

[0055] like Figure 5 As shown, in some embodiments of the present disclosure, the optical modulator 20 and the laser emitting device 10 are discrete devices, and the light emitting end face of the laser emitting device 10 is directly coupled and contacted with the light incident end face of the optical modulator 20, that is, they are directly optically coupled without an intermediary.

[0056] like Figure 6 As shown, in some embodiments of the present disclosure, the optical modulator 20 and the laser emitting device 10 are discrete devices, and the light-emitting end face of the laser emitting device 10 is optically coupled to the light-incoming end face of the optical modulator 20 via a lens or a metasurface device 11. Utilizing the optical control effect of the lens or metasurface device, the coupling loss between the optical modulator 20 and the laser emitting device 10 can be minimized.

[0057] This specification provides many different embodiments or examples that can be used to implement the present disclosure. It should be understood that these different embodiments or examples are purely exemplary and are not intended to limit the scope of protection of the present disclosure in any way. Those skilled in the art can conceive of various changes or replacements based on the disclosure of the specification of the present disclosure, all of which should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection defined by the appended claims.

Claims

1. An optical modulation device, comprising: A waveguide layer, comprising a waveguide body and a plurality of nano-waveguides embedded in the waveguide body and extending along a first direction, wherein the first direction is a light emitting direction of the laser emitting device; a first electrode layer, located on one side of the waveguide layer, comprising a plurality of first electrodes extending along a first direction and arranged in one-to-one correspondence with the plurality of nano-waveguides; and The second electrode layer is located on a side of the waveguide layer facing away from the first electrode layer, and includes a plurality of second electrodes extending along the first direction and arranged in a one-to-one correspondence with the plurality of first electrodes. Each second electrode and the corresponding first electrode are configured to apply a modulation voltage to the corresponding nanowaveguide to change its refractive index.

2. The optical modulation device according to claim 1, wherein The plurality of nano-waveguides are arranged in a single layer and arranged sequentially along a second direction intersecting the first direction; or The multiple nanowaveguides are arranged in multiple layers, each layer includes multiple nanowaveguides arranged in sequence along a second direction crossing the first direction, and the nanowaveguides of at least two layers do not overlap in the thickness direction of the waveguide layer.

3. The optical modulation device according to claim 1, wherein The plurality of nano-waveguides are arranged in a single layer and arranged in sequence along a second direction intersecting the first direction; The optical modulation device further includes a first wire layer, a substrate, a first insulating layer, a second insulating layer, a cladding layer, and a second wire layer, wherein the first wire layer, the substrate, the first insulating layer, the first electrode layer, the waveguide layer, the second electrode layer, the second insulating layer, the cladding layer, and the second wire layer are stacked on top of each other, wherein: The first wire layer includes a plurality of first wires arranged in one-to-one correspondence with the plurality of first electrodes, and each first wire is connected to a corresponding first electrode through a via hole on the substrate and the first insulating layer; The second wire layer includes a plurality of second wires arranged in one-to-one correspondence with the plurality of second electrodes, and each second wire is connected to a corresponding second electrode through a via hole on the cladding layer and the second insulating layer.

4. The optical modulation device according to claim 3, wherein The cladding layer includes a first trench and a second trench extending along a first direction, and orthographic projections of the plurality of first electrodes, the plurality of nanowaveguides, and the plurality of second electrodes on the substrate are located between the orthographic projections of the first trench and the second trench on the substrate.

5. The optical modulation device according to claim 3, wherein: The cladding includes a slab portion and a convex portion located on a side of the slab portion facing away from the second insulating layer. The orthographic projections of the plurality of first electrodes, the plurality of nanowaveguides and the plurality of second electrodes on the substrate are located within the orthographic projection of the convex portion on the substrate.

6. The optical modulation device according to any one of claims 1 to 5, wherein: The material of the waveguide body includes at least one of silicon, silicon oxide, silicon nitride, gallium arsenide, aluminum gallium arsenide, or indium gallium arsenide.

7. The optical modulation device according to any one of claims 1 to 5, wherein: The material of the waveguide body includes the gain medium material.

8. The optical modulation device according to any one of claims 1 to 5, wherein: The material of the nanowaveguide includes at least one of lithium niobate crystal, gallium arsenide crystal, lithium tantalate crystal, or potassium dihydrogen phosphate crystal.

9. The optical modulation device according to any one of claims 1 to 5, wherein: The materials of the first electrode layer and the second electrode layer include at least one of indium tin oxide and indium zinc oxide.

10. A laser device comprising: A laser emitting device, and an optical modulation device according to any one of claims 1 to 9 located on a light emitting side of the laser emitting device, wherein the first direction is a light emitting direction of the laser emitting device.

11. The laser device according to claim 10, wherein: The light modulating device and the laser emitting device are fabricated on the same substrate; or The optical modulator and the laser emitting device are discrete devices, and the light emitting end face of the laser emitting device is directly optically coupled to the light incident end face of the optical modulator; or The optical modulator and the laser emitting device are discrete devices, and the light emitting end face of the laser emitting device and the light incident end face of the optical modulator are optically coupled through a lens or a metasurface device.

12. The laser device according to claim 10 or 11, wherein: The laser emitting device is a gas laser device, a solid laser device, a semiconductor laser device or a dye laser device.

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