Bidirectional diode and bidirectional diode with adjustable conduction voltage
By integrating anti-parallel diode structures and semiconductor materials of different conductivity types in bidirectional diodes, the adjustment of bidirectional conduction and conduction voltages is achieved, solving the problem of insufficient design flexibility in the prior art, and improving the application of products Scope and reliability.
Patent Information
- Application Number
- CN202210678377.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-06-13
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2042-06-13
AI Technical Summary
The existing bidirectional diodes are not designed to be flexible in different application scenarios, especially the ability to regulate the on-voltage, which is difficult to meet diversified needs.
A bidirectional diode including the first and second diode regions is designed, and bidirectional conduction is achieved using different conductive types of semiconductor materials by integrating an anti-parallel structure between the insulating regions, and by adjusting the number of parallel or series connections of the diode regions. to adjust the on voltage.
The flexibility of bidirectional conduction and adjustability of conduction voltage are achieved, which reduces the demand for external conductors, improves overall reliability and reduces losses, and saves process steps.
Smart Images
Figure CN115084131B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a semiconductor device, in particular to a bidirectional diode and a bidirectional diode with adjustable conduction voltage. Background Art
[0002] Bidirectional diodes are commonly used power electronic devices, which can be turned on when subjected to positive voltage and negative voltage. The most commonly used diode in the industry is the Zener diode, which is turned on based on the Zener breakdown effect under the action of reverse voltage.
[0003] The industry needs more types of bidirectional diodes to meet the needs of different application scenarios and improve the flexibility of product design. Summary of the invention
[0004] The present application proposes a bidirectional diode, comprising: a first diode region, comprising a positive terminal D1+ and a negative terminal D1-, the positive terminal D1+ and the negative terminal D1- of the first diode region being equivalent to a diode D1; a second diode region, comprising a positive terminal D2+ and a negative terminal D2-, the positive terminal D2+ and the negative terminal D2- of the second diode region being equivalent to a diode D2, wherein the positive terminal D2+ of the second diode region and the negative terminal D1- of the first diode region are located on the second side of the bidirectional diode, and the negative terminal D2- of the second diode region and the positive terminal D1+ of the first diode region are located on the first side of the bidirectional diode; an insulating region, located between the first diode region and the second diode region, for isolating the first diode region from the second diode region.
[0005] Furthermore, the first diode region includes a first conductive type semiconductor material region, a second conductive type semiconductor material region and a third conductive type semiconductor material, the second conductive type semiconductor material region constitutes the positive terminal D1+ of the first diode region, and the third conductive type semiconductor material constitutes the negative terminal D1- of the first diode region.
[0006] Furthermore, the second diode region includes a first conductive type semiconductor material region, a second conductive type semiconductor material region and a third conductive type semiconductor material region, the second conductive type semiconductor material region constitutes the positive terminal D1+ of the second diode region, and the third conductive type semiconductor material constitutes the negative terminal D1- of the second diode region.
[0007] Furthermore, the first conductive type semiconductor material is an intrinsic semiconductor or a lightly doped semiconductor; the second conductive type semiconductor material region is a P-type semiconductor or a hole transport material; and the third conductive type semiconductor material region is an N-type semiconductor or an electron transport material.
[0008] Furthermore, it also includes a first electrode and a second electrode, the first electrode contacts the second conductive type semiconductor material region of the first diode region and the third conductive type semiconductor material region of the second diode region, and the second electrode contacts the third conductive type semiconductor material of the first diode region and the second conductive type semiconductor material region of the second diode region.
[0009] Furthermore, the first diode region includes a first conductive type semiconductor material region and a third conductive type semiconductor material; the second diode region includes a first conductive type semiconductor material region and a third conductive type semiconductor material region; the bidirectional diode also includes a first electrode and a second electrode, the first electrode contacts the first conductive type semiconductor material region of the first diode region and the third conductive type semiconductor material region of the second diode region, and the second electrode contacts the third conductive type semiconductor material of the first diode region and the first conductive type semiconductor material region of the second diode region.
[0010] Furthermore, the first diode region includes a first conductive type semiconductor material region and a second conductive type semiconductor material region, the second diode region includes a first conductive type semiconductor material region and a second conductive type semiconductor material region, and the bidirectional diode also includes a first electrode and a second electrode, the first electrode contacts the second conductive type semiconductor material region of the first diode region and the first conductive type semiconductor material region of the second diode region, and the second electrode contacts the first conductive type semiconductor material region of the first diode region and the second conductive type semiconductor material region of the second diode region.
[0011] The present application also provides a bidirectional diode with adjustable on-state voltage, comprising: the above-mentioned bidirectional diode; further comprising a plurality of diode regions on the first diode region side to form a plurality of equivalent diodes, the plurality of equivalent diodes being connected in parallel; further comprising a plurality of diode regions on the second diode region side to form a plurality of equivalent diodes, the plurality of equivalent diodes being connected in parallel, the plurality of equivalent diodes and one side of the bidirectional diode being interconnected by a conductive layer, and the other sides being isolated from each other.
[0012] Furthermore, each diode region is formed by superposition of a second conductive type semiconductor material region, a first conductive type semiconductor material region and a third conductive type semiconductor material region, and an electrode is formed on the side away from the conductive layer. The size of the conduction voltage can be adjusted by adjusting the number of electrodes in the diode region connected to the bidirectional diode electrode.
[0013] The present application also provides a bidirectional diode with adjustable on-state voltage, comprising: the above-mentioned bidirectional diode; on the first diode region side, n-1 diode regions are also included, which together with the first diode region constitute n equivalent diodes, the n equivalent diodes are in a series connection structure, the first side of the n diode regions is contacted with the conductive layer by a third conductive type semiconductor material, and the third conductive type semiconductor material from the second diode region to the n-th diode region includes a protrusion, the corresponding conductive layer includes a groove, the protrusion is filled in the groove, the surfaces of the n diode regions except the first side and the isolation grooves between the diode regions are covered by electrodes, wherein a notch is formed on the electrodes from the first diode region to the n-1-th diode region to disconnect the electrodes; on the second diode region side, m-1 diode regions, together with the second diode region, constitute m equivalent diodes, the m equivalent diodes are in a series connection structure, the first side of the m diode regions is contacted with the conductive layer by the second conductive type semiconductor material region, and the third conductive type semiconductor material from the second diode region to the m-th diode region includes a protrusion, the corresponding conductive layer includes a groove, the protrusion is filled in the groove, the surfaces of the m diode regions except the first side and the isolation grooves between the diode regions are covered by electrodes, wherein notches are formed on the electrodes from the first diode region to the m-1th diode region to disconnect the electrodes; the surfaces and the isolation grooves between the diode regions are covered by electrodes, wherein notches are formed on the electrodes from the first diode region to the m-1th diode region to disconnect the electrodes. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 FIG. 4 is a cross-sectional schematic diagram of a bidirectional diode according to an embodiment of the present invention.
[0015] Figure 2 for Figure 1 Schematic diagram of the equivalent circuit of a bidirectional diode.
[0016] Figure 3 FIG. 4 is a cross-sectional schematic diagram of a bidirectional diode according to another embodiment of the present application.
[0017] Figure 4 FIG. 4 is a cross-sectional schematic diagram of a bidirectional diode according to another embodiment of the present application.
[0018] Figure 5 Schematic diagram of an equivalent circuit of a bidirectional diode with adjustable on-voltage according to an embodiment of the present application.
[0019] Figure 6 It is a cross-sectional schematic diagram of a bidirectional diode with adjustable on-voltage according to an embodiment of the present application.
[0020] Figure 7 FIG. 1 is a schematic diagram of an equivalent circuit of a bidirectional diode with adjustable on-voltage according to another embodiment of the present application.
[0021] Figure 8 FIG. 4 is a cross-sectional diagram of a bidirectional diode with adjustable on-voltage according to another embodiment of the present application. DETAILED DESCRIPTION
[0022] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
[0023] In one embodiment of the present invention, a bidirectional diode is provided. Figure 1 The cross-sectional diagram of a bidirectional diode according to an embodiment of the present invention is shown in FIG. Figure 2 shown Figure 1 Schematic diagram of an equivalent circuit of a bidirectional diode. The bidirectional diode 100 includes:
[0024] The first diode region 110, such as Figure 1 and Figure 2 As shown, it includes a positive terminal D1+ and a negative terminal D1-, and a first semiconductor material region 113 located between the positive terminal D1+ and the negative terminal D1-. The positive terminal D1+ and the negative terminal D1- of the first diode region 110 are equivalent to a diode D1. Figure 2 The diode D1 shown;
[0025] The second diode region 120, such as Figure 1 and Figure 2 As shown, it includes a positive terminal D2+ and a negative terminal D2-, and a second semiconductor material region 123 located between the positive terminal D2+ and the negative terminal D2-. The positive terminal D2+ and the negative terminal D2- of the second diode region 120 are equivalent to a diode D2. Figure 2 The diode D2 shown, wherein the positive terminal D2+ of the second diode region 120 and the negative terminal D1- of the first diode region 110 are located at the second side 102 of the bidirectional diode 100, and the negative terminal D2- of the second diode region 120 and the positive terminal D1+ of the first diode region 110 are located at the first side 101 of the bidirectional diode 100;
[0026] The insulating region 130 is located between the first semiconductor material region 113 and the second semiconductor material region 123 and is used to isolate the first semiconductor material region 113 from the second semiconductor material region 123. Figure 1 and 2 As shown, from right to left are the first diode region 110 , the insulating region 130 , and the second diode region 120 .
[0027] like Figure 1 and Figure 2 As shown, when a positive voltage is applied to the bidirectional diode (i.e., the first side wiring potential is higher than the second side wiring potential), the first diode region 110 is turned on while the second diode region 120 does not pass current; when a negative voltage is applied (i.e., the first side wiring potential is lower than the second side wiring potential), the second diode region 120 is turned on while the first diode region 110 does not pass current. For thin film semiconductors, the thickness d is relatively thin, and the insulating region 130 exceeds a certain width (if it is a thin film semiconductor of several hundred nanometers, usually a width of several microns, that is, several times its thickness, is sufficient) to cause a large lateral resistance and play a good insulating role. For example, for a semiconductor material with a thickness of 1 micron, depending on the resistivity of the material, the width r0 of the insulating region 130 is usually 5-10 microns, which is sufficient. Since the micron-level size is negligible compared to the overall size of conventional devices, it is not a problem to be wider.
[0028] Thus, by integrating two anti-parallel diodes in each bidirectional diode, bidirectional conduction can be easily realized. In addition, external wires are saved, the overall reliability is improved, the parasitic series resistance is reduced, and the loss is reduced. In addition, the formation process of the insulating region 130, the first diode region 110 and the second diode region 120 can be integrated, that is, the process is saved.
[0029] like Figure 1 As shown, the first diode region 110 includes a first conductive type semiconductor material region 113, a second conductive type semiconductor material region 111 and a third conductive type semiconductor material 112. The first conductive type semiconductor material is, for example, an intrinsic semiconductor or a lightly doped semiconductor. The second conductive type semiconductor material region 111 is, for example, a P-type semiconductor, specifically a heavily doped or undoped P-type semiconductor, or a hole transport material. The third conductive type semiconductor material 112 is, for example, an N-type semiconductor, specifically a heavily doped or undoped N-type semiconductor, or an electron transport material. That is, the second conductive type semiconductor material region 111 constitutes the positive terminal D1+ of the first diode region 110, and the third conductive type semiconductor material 112 constitutes the negative terminal D1- of the first diode region 110.
[0030] like Figure 1As shown, the second diode region 120 includes a first conductive type semiconductor material region 123, a second conductive type semiconductor material region 121, and a third conductive type semiconductor material region 122. The first conductive type semiconductor material is, for example, an intrinsic semiconductor or a lightly doped semiconductor. The second conductive type semiconductor material is, for example, a P-type semiconductor, specifically a heavily doped or undoped P-type semiconductor, or a hole transport material. The third conductive type semiconductor material is, for example, an N-type semiconductor, specifically a heavily doped or undoped N-type semiconductor, or an electron transport material. That is, the second conductive type semiconductor material region 121 constitutes the positive terminal D1+ of the second diode region 120, and the third conductive type semiconductor material 122 constitutes the negative terminal D1- of the second diode region 120.
[0031] like Figure 1 As shown, the insulating region 130 is a first conductive type semiconductor material region. The first conductive type semiconductor material is, for example, an intrinsic semiconductor or a lightly doped semiconductor.
[0032] like Figure 1 As shown, both sides of the insulating region 130 (the first side 101 of the bidirectional diode 100 and its opposite side 102) are made of semiconductor materials of the same conductivity type to form an insulating region. Figure 1 As shown, both sides of the insulating region 130 are made of the third conductive type semiconductor material, or of the second conductive type semiconductor material.
[0033] like Figure 1 As shown, the bidirectional diode further includes a first electrode 103 and a second electrode 104, the first electrode 103 contacts the second conductive type semiconductor material region 111 of the first diode region 110 and the third conductive type semiconductor material region 122 of the second diode region 120, and the second electrode 104 contacts the third conductive type semiconductor material 112 of the first diode region 110 and the second conductive type semiconductor material region 121 of the second diode region 120. Specifically, the first electrode 103 and the second electrode 104 may be metal electrodes.
[0034] See also Figure 3 The cross-sectional diagram of a bidirectional diode according to another embodiment of the present application is shown in FIG. Figure 3As shown, the first diode region 110 includes a first conductive type semiconductor material region 113 and a third conductive type semiconductor material 112. The second diode region 120 includes a first conductive type semiconductor material region 123 and a third conductive type semiconductor material region 122. The bidirectional diode also includes a first electrode 103 and a second electrode 104, the first electrode 103 contacts the first conductive type semiconductor material region 113 of the first diode region 110 and the third conductive type semiconductor material region 122 of the second diode region 120, and the second electrode 104 contacts the third conductive type semiconductor material 112 of the first diode region 110 and the first conductive type semiconductor material region 123 of the second diode region 120. That is, the first electrode 103 contacts the first conductive type semiconductor material region 113 of the first diode region 110, and constitutes the Schottky junction (positive terminal D1+) of the first diode region 110, and the third conductive type semiconductor material 112 constitutes the negative terminal D1- of the first diode region 110. That is, the second electrode 104 contacts the first conductive type semiconductor material region 123 of the second diode region 120 to form a Schottky junction (positive terminal D2+) of the second diode region 120, and the third conductive type semiconductor material region 122 forms a negative terminal D2- of the second diode region 10. The Schottky contact formed by direct contact between the semiconductor and the metal usually has a low on-voltage, which can be as low as about 0.3 volts.
[0035] See also Figure 4 The cross-sectional diagram of a bidirectional diode according to another embodiment of the present application is shown in FIG. Figure 4As shown, the first diode region 110 includes a first conductive type semiconductor material region 113 and a second conductive type semiconductor material region 111. The second diode region 120 includes a first conductive type semiconductor material region 123 and a second conductive type semiconductor material region 121. The bidirectional diode also includes a first electrode 103 and a second electrode 104, the first electrode 103 contacts the second conductive type semiconductor material region 111 of the first diode region 110 and the first conductive type semiconductor material region 123 of the second diode region 120, and the second electrode 104 contacts the first conductive type semiconductor material region 113 of the first diode region 110 and the second conductive type semiconductor material region 121 of the second diode region 120. That is, the first electrode 103 contacts the first conductive type semiconductor material region 123 of the second diode region 120, thereby forming a Schottky junction (negative terminal D2-) of the second diode region 120, and the second conductive type semiconductor material region 121 forms the positive terminal D2+ of the second diode region 120. That is, the second electrode 104 contacts the first conductive type semiconductor material region 113 of the first diode region 110 to form a Schottky junction (negative terminal D1-) of the first diode region 110, and the second conductive type semiconductor material region 111 forms the positive terminal D1+ of the first diode region 110. The Schottky contact formed by direct contact between the semiconductor and the metal usually has a low on-voltage, which can be as low as about 0.3 volts.
[0036] In practical applications, it is also hoped that the forward and reverse current conduction voltages of the bidirectional diode can be adjusted to expand the application range of the bidirectional diode. Figure 2 For example, in addition to the bypass parasitic caused by the insulating area (for thin film semiconductors, a not-too-large r0 can lead to a large lateral resistance, which is a large bypass parasitic resistance), the diodes on both sides have a series parasitic resistance R s1 and R s2 , the series parasitic resistance R s1 The size depends on Figure 1 The width of r1, the series parasitic resistance R s2 The size depends on Figure 1 Specifically, the conduction voltage drop of the first diode region 110 includes the parasitic series resistance R s1 The voltage drop on the second diode region 120 includes the parasitic series resistance R s2 The voltage drop across it is equal to the conduction voltage of the equivalent diode D2.
[0037] In one embodiment of the present application, a bidirectional diode with adjustable conduction voltage is also provided. Figure 1 , by adjusting Figure 1The width of r1 and r2 in the figure, the narrower the area, the larger the series resistance of the diode at the corresponding position, and the larger the conduction voltage, that is, adjusting the series resistance of the diode to adjust the conduction voltage. For details, please refer to Figure 5 The schematic diagram of the equivalent circuit of a bidirectional diode with adjustable conduction voltage in one embodiment is essentially to adjust the number of diodes in parallel on both sides of the insulation area. Figure 5 Each diode on both sides is the same, and the series resistance is also the same. In actual preparation, there may be slight differences due to process errors. Each diode can also be made different due to special requirements. For example, some specific on-voltage intervals are required when adjusting the on-voltage.
[0038] For details, please refer to Figure 6 The cross-sectional schematic diagram of a bidirectional diode with adjustable on-state voltage according to an embodiment of the present application is shown, and the bidirectional diode with adjustable on-state voltage includes:
[0039] Figure 1 The specific structure and principle of the bidirectional diode are not described here.
[0040] A plurality of diode regions 140 are further included on the side of the first diode region 110 (the side indicated by arrow 1) to form a plurality of equivalent diodes (such as equivalent diodes D 11 , Equivalent diode D 12 Until the equivalent diode D 1n ), multiple equivalent diodes are connected in parallel;
[0041] A plurality of diode regions 150 are further included on the side of the second diode region 120 (the side indicated by arrow 2) to form a plurality of equivalent diodes (such as equivalent diodes D 21 , Equivalent diode D 22 Until the equivalent diode D 2n ), multiple equivalent diodes are connected in parallel,
[0042] One side of the multiple equivalent diodes and the bidirectional diodes are interconnected by the conductive layer 802 , and the other sides are isolated from each other.
[0043] In this way, the magnitude of the conduction voltage can be adjusted by adjusting the number of diode regions connected to the bidirectional diode electrode. Figure 5 As shown, the forward bias is equivalent to two diodes in parallel, and the corresponding series resistance is 0.5R s1 ; The reverse bias is equivalent to 4 diodes in parallel, and the corresponding series resistance is 0.25R s1 In this way, by adjusting the number of diodes incorporated, the size of the series resistance is adjusted, and then the conduction voltage is adjusted, and the adjustment is convenient.
[0044] like Figure 5As shown, the conductive layer 802 is located on the substrate 801. Figure 1 The bidirectional diode, a plurality of first diode regions 140 and a plurality of second diode regions 150 are formed on the conductive layer 802. The first diode regions 140, the second diode regions 150 and the bidirectional diode are isolated by grooves 807.
[0045] like Figure 5 As shown, each diode region is formed by stacking a second conductive type semiconductor material region 804, a first conductive type semiconductor material region 805, and a third conductive type semiconductor material 803, and an electrode 806 is formed on a side away from the substrate 801 (or the conductive layer 802). Specifically, the magnitude of the conduction voltage is adjusted by adjusting the number of electrodes in the diode region connected to the bidirectional diode electrode.
[0046] In another embodiment of the present application, another bidirectional diode with adjustable conduction voltage is provided. Taking the equivalent diodes as an example, if the conduction voltage of each equivalent diode is v0, when these two identical equivalent diodes are connected in series, the conduction voltage of the entire series is 2v0. The conduction voltage can be adjusted by adjusting the number of series diodes on each side. For details, please refer to Figure 7 The schematic diagram of the equivalent circuit of a bidirectional diode with adjustable conduction voltage in another embodiment is shown, which is essentially to adjust the number of diodes connected in series on both sides of the insulation area. Figure 7 Each diode on both sides is the same, and the series resistance is also the same. In actual preparation, there may be slight differences due to process errors. Each diode can also be made different due to special requirements. For example, some specific on-voltage intervals are required when adjusting the on-voltage.
[0047] For details, please refer to Figure 8 The cross-sectional schematic diagram of a bidirectional diode with adjustable on-state voltage according to another embodiment of the present application is shown, and the bidirectional diode with adjustable on-state voltage includes:
[0048] Figure 1 The specific structure and principle of the bidirectional diode are not described here.
[0049] On the side of the first diode region 110 (in the direction indicated by arrow 1), n-1 diode regions 240 are also included, which together with the first diode region 110 form n equivalent diodes, such as the equivalent diode D 31 , Equivalent diode D 32 Until the equivalent diode D 3n, n equivalent diodes are connected in series, the first side of the n diode regions is contacted with the conductive layer 902 by the third conductive type semiconductor material 903, and the third conductive type semiconductor material 903 of the second diode region to the n-th diode region includes a protrusion 908, and the corresponding conductive layer 902 includes a groove 909, and the protrusion 908 is filled in the groove 909, and the surface of the n diode regions 240 except the first side and the isolation groove 907 between the diode regions are covered by the electrode 906, wherein the electrode of the first diode region to the n-1-th diode region is formed with a notch 910 to disconnect the electrode;
[0050] On the side of the second diode region 120 (in the direction indicated by arrow 2), m-1 diode regions 250 are also included, which together with the second diode region 120 form m equivalent diodes, such as the equivalent diode D 41 , Equivalent diode D 42 Until the equivalent diode D 4m , m equivalent diodes are connected in series, the first side of the m diode regions is contacted with the conductive layer 902 by the second conductive type semiconductor material area 904, and the third conductive type semiconductor material 903 from the second diode region to the m-th diode region includes a protrusion 911, and the corresponding conductive layer 902 includes a groove 912, and the protrusion 911 is filled in the groove 912, and the surface of the m diode regions 250 except the first side and the isolation groove 914 between the diode regions are covered by the electrode 906, wherein a notch 913 is formed on the electrode from the first diode region to the m-1-th diode region to disconnect the electrode.
[0051] In this way, by adjusting the number of diode regions connected to the bidirectional diode electrodes, the magnitude of the conduction voltage can be adjusted. Figure 8 As shown, the forward bias is equivalent to 4 diodes in series, and the corresponding forward conduction voltage drop is 4v0; while the reverse bias is equivalent to 2 diodes in series, and the corresponding forward conduction voltage drop is 2v0. In this way, by adjusting the number of diodes in series, the conduction voltage is adjusted, and the adjustment is convenient.
[0052] like Figure 8 As shown, the conductive layer 902 is located on the substrate 901. Figure 1 The bidirectional diode, the plurality of first diode regions 240 , and the plurality of second diode regions 250 are formed on the conductive layer 902 .
[0053] like Figure 8 As shown, each diode region is formed by stacking a second conductive type semiconductor material region 904, a first conductive type semiconductor material region 905 and a third conductive type semiconductor material 903. Specifically, the magnitude of the conduction voltage is adjusted by adjusting the number of conductive layers corresponding to the diode region connected to the bidirectional diode electrode.
[0054] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A bidirectional diode, characterized in that: include: The first diode region includes a positive terminal D1+ and a negative terminal D1-, and a first semiconductor material region between the positive terminal D1+ and the negative terminal D1-. The positive terminal D1+ and the negative terminal D1- of the first diode region are equivalent to a diode D1; The second diode region includes a positive terminal D2+ and a negative terminal D2-, and a second semiconductor material region located between the positive terminal D2+ and the negative terminal D2-, the positive terminal D2+ and the negative terminal D2- of the second diode region are equivalent to a diode D2, wherein the positive terminal D2+ of the second diode region and the negative terminal D1- of the first diode region are located on the second side of the bidirectional diode, and the negative terminal D2- of the second diode region and the positive terminal D1+ of the first diode region are located on the first side of the bidirectional diode; The insulating region is located between the first semiconductor material region and the second semiconductor material region, and isolates the first semiconductor material region from the second semiconductor material region.
2. The bidirectional diode according to claim 1, characterized in that: The first semiconductor material region is a first conductivity type semiconductor material region, the positive terminal D1+ of the first diode region is a second conductivity type semiconductor material region, and the negative terminal D1- of the first diode region is a third conductivity type semiconductor material region; The second semiconductor material region is a first conductivity type semiconductor material region, the positive terminal D2+ of the second diode region is a second conductivity type semiconductor material region, and the negative terminal D2- of the second diode region is a third conductivity type semiconductor material region.
3. The bidirectional diode according to claim 2, characterized in that: The first conductive type semiconductor material is an intrinsic semiconductor or a lightly doped semiconductor; the second conductive type semiconductor material region is a P-type semiconductor or a hole transport material; and the third conductive type semiconductor material region is an N-type semiconductor or an electron transport material.
4. The bidirectional diode according to claim 2, characterized in that: It also includes a first electrode and a second electrode, the first electrode contacts the second conductive type semiconductor material region of the first diode region and the third conductive type semiconductor material region of the second diode region, and the second electrode contacts the third conductive type semiconductor material of the first diode region and the second conductive type semiconductor material region of the second diode region.
5. The bidirectional diode according to claim 1, characterized in that: The first semiconductor material region and the second semiconductor material region are both first conductivity type semiconductor material regions, the cathode terminal D1- of the first diode region is a third conductivity type semiconductor material; the cathode terminal D1- of the second diode region is a third conductivity type semiconductor material region; The bidirectional diode further includes a first electrode and a second electrode, the first electrode contacts the first conductive type semiconductor material region of the first diode region and the third conductive type semiconductor material region of the second diode region, and the second electrode contacts the third conductive type semiconductor material region of the first diode region and the first conductive type semiconductor material region of the second diode region; The first electrode also constitutes the anode terminal D1+ of the first diode region, and the second electrode also constitutes the anode terminal D2+ of the second diode region.
6. The bidirectional diode according to claim 1, characterized in that: The first semiconductor material region and the second semiconductor material region are both first conductivity type semiconductor material regions, the positive terminal D1+ of the first diode region is a second conductivity type semiconductor material region, and the positive terminal D1+ of the second diode region is a second conductivity type semiconductor material region; The bidirectional diode further includes a first electrode and a second electrode, the first electrode contacts the second conductivity type semiconductor material region of the first diode region and the first conductivity type semiconductor material region of the second diode region, and the second electrode contacts the first conductivity type semiconductor material region of the first diode region and the second conductivity type semiconductor material region of the second diode region; The first electrode also constitutes the cathode terminal D2- of the second diode region, and the second electrode also constitutes the cathode terminal D1- of the first diode region.
7. A bidirectional diode with adjustable on-state voltage, characterized in that: include: The bidirectional diode according to claim 1; A plurality of diode regions are also included on the first diode region side to form a plurality of equivalent diodes, and the plurality of equivalent diodes are in a parallel connection structure; The second diode region side also includes a plurality of diode regions to form a plurality of equivalent diodes, and the plurality of equivalent diodes are connected in parallel. One side of the multiple equivalent diodes and the bidirectional diodes are connected to each other by a conductive layer, and the other sides are isolated from each other.
8. The bidirectional diode with adjustable on-state voltage according to claim 7, characterized in that: Each diode region is formed by the superposition of a second conductive type semiconductor material region, a first conductive type semiconductor material region and a third conductive type semiconductor material region, and an electrode is formed on the side away from the conductive layer. The size of the conduction voltage can be adjusted by adjusting the number of electrodes in the diode region connected to the bidirectional diode electrode.
9. A bidirectional diode with adjustable on-state voltage, characterized in that: include: The bidirectional diode according to claim 1; The first diode region side also includes n-1 diode regions, which together with the first diode region form n equivalent diodes, the n equivalent diodes are in a series connection structure, the first side of the n diode regions is contacted with the conductive layer by the third conductive type semiconductor material, and the third conductive type semiconductor material of the second diode region to the n-th diode region includes a protrusion, the corresponding conductive layer includes a groove, the protrusion is filled in the groove, the surfaces of the n diode regions except the first side and the isolation grooves between the diode regions are covered by electrodes, wherein notches are formed on the electrodes of the first diode region to the n-1-th diode region to disconnect the electrodes; The second diode region side also includes m-1 diode regions, which together with the second diode region constitute m equivalent diodes, and the m equivalent diodes are in a series connection structure. The first side of the m diode regions is contacted with the conductive layer by the second conductive type semiconductor material region, and the third conductive type semiconductor material from the second diode region to the m-th diode region includes a protrusion, and the corresponding conductive layer includes a groove, and the protrusion is filled in the groove. The surfaces of the m diode regions except the first side and the isolation grooves between the diode regions are covered by electrodes, wherein notches are formed on the electrodes from the first diode region to the m-1-th diode region to disconnect the electrodes.