Integrated photoelectric detection semiconductor optoelectronic components

Abstract

An integrated photodetection semiconductor optoelectronic component (300) for measuring the intensity (I1, I2) of each of two color components (C1, C2) of dichroic light (DL) irradiating the optoelectronic component, comprising: a first SPAD (306) adapted to detect photons within a wide wavelength range, the first SPAD comprising an effective surface area (340) allowing photons to be detected to enter the first SPAD; a second SPAD (308) adapted to detect photons within a wide wavelength range, the second SPAD being arranged adjacent to the first SPAD (306); and a semiconductor optical long-pass filter (310) at least partially covering the effective surface area (340) of the first SPAD. 310) allows the first color component (C1) of the two color components of the dichroic light (DL) to pass through, and blocks the second color component (C2) of the two color components of the dichroic light (DL); an electronic circuit (304) for reading and processing the detection signals (S1, S2) transmitted by the first and second SPADs, the electronic circuit being suitable for: i) providing a first intensity output signal I1 indicating the intensity of the first color component (C1) based on the detection signal (S1) transmitted by the first SPAD; and ii) providing a second intensity output signal I2 indicating the intensity of the second color component (C2) through difference analysis based on the detection signals (S1, S2) transmitted by the first and second SPADs.

Description

[0001] This application claims the priority of German patent application No. 102020201453.1, the disclosure content of which is hereby incorporated by reference into the present application. Technical Field

[0002] The present disclosure also relates to photodetection components widely used as part of electronic devices, such as smartphones, wearable devices, tablets, displays, etc. Such components / optical sensors can expand the functionality and / or help improve the operation of the electronic devices into which they are integrated. Background Art

[0003] It would be desirable to enhance these known optical sensors so that they could rapidly detect weak light signals in two different wavelength ranges simultaneously. Rapid, simultaneous, and highly sensitive detection in the near-infrared and blue / ultraviolet ranges would be particularly desirable, as this would make portable electronic devices equipped with such sensors more suitable for use as, for example, spectrometers or vital sign monitors.

[0004] At the same time, these optical sensors should be as simple, cheap, and small as possible. Otherwise, they will no longer be suitable for large-scale manufacturing and integration into consumer devices.

[0005] Therefore, an object of the present disclosure is to provide an integrated photodetection semiconductor optoelectronic component that can quickly, reliably, and simultaneously measure the intensity of each of the two color components of dichroic light while being easily manufactured on a large scale. Summary of the Invention

[0006] According to the present disclosure, this object is achieved by an integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two color components of dichroic light illuminating the optoelectronic component, the component comprising:

[0007] a first SPAD adapted to detect photons within a wide wavelength range, the first SPAD comprising an active surface area allowing photons to be detected to enter the first SPAD;

[0008] a second SPAD adapted to detect photons within a wide wavelength range, the second SPAD being arranged adjacent to the first SPAD;

[0009] a semiconductor optical long-pass filter at least partially covering an active surface area of the first SPAD, the long-pass filter allowing a first color component of the two color components of the dichromatic light to pass therethrough and blocking a second color component of the two color components of the dichromatic light;

[0010] - an electronic circuit for reading and processing the detection signals delivered by the first and second SPADs, the electronic circuit being adapted to:

[0011] i) providing a first intensity output signal I1 indicative of the intensity of a first color component based on the detection signal delivered by the first SPAD; and

[0012] ii) providing a second intensity output signal I2 indicating the intensity of the second color component by difference analysis based on the detection signals delivered by the first SPAD and the second SPAD.

[0013] By using a SPAD as the light-detecting element, the component benefits from its inherent high sensitivity, large gain, and fast response. Thanks to a specialized longpass filter combined with differential analysis electronics, the component is able to accurately measure the intensity of both color components. Semiconductor materials such as polycrystalline silicon are readily available in semiconductor fabrication plants. Therefore, the characteristic longpass filter and the present photodetection optoelectronic component can be easily manufactured using standard CMOS manufacturing processes.

[0014] According to preferred embodiments, the components of the present disclosure may include one, several or all of the following features in all technically possible combinations:

[0015] - the long-pass filter is a single layer of semiconductor material deposited over the active surface area of the first SPAD;

[0016] -The semiconductor material of the long-pass filter is silicon, germanium, gallium arsenide or gallium nitride;

[0017] -The long-pass filter also serves as a functional electronic component as part of the circuit;

[0018] The semiconductor material of the long-pass filter is doped so that the electrical material properties of the long-pass filter are suitable for its additional role as the functional electronic component;

[0019] - A long-pass filter also serves as a passive quenching resistor for the first SPAD;

[0020] - the long-pass filter has a shape forming a meandering conductive path of the passive quenching resistor;

[0021] - the meandering shape of the longpass filter defines a set of non-filtering gaps, and wherein said gaps are covered by an optical mask that is opaque to dichroic light, preferably made of metal;

[0022] The difference analysis performed by the electronic circuit to provide the second intensity output signal I2 comprises the following steps:

[0023] - determining a first photon detection rate N1 based on the output signal delivered by the first SPAD;

[0024] - determining a second photon detection rate N2 based on the output signal delivered by the second SPAD; and

[0025] - Calculate the second intensity output signal I2 using the following formula:

[0026]

[0027] Wherein, a and b are constants predetermined by the photon detection efficiencies of the first and second SPADs at the wavelengths corresponding to the two color components;

[0028] - electronic circuitry including a time-to-digital converter for time-of-flight measurements;

[0029] The first SPAD and the second SPAD have the same pn junction structure;

[0030] -The two color components of dichroic light are near-infrared light and near-ultraviolet-blue light;

[0031] - one or more additional SPADs with one or more corresponding additional semiconductor optical long-pass filters for measuring the intensity of one or more additional color components of incident light.

[0032] The present disclosure also relates to a method of manufacturing an optoelectronic component as defined above.

[0033] The present disclosure also relates to an electronic device, such as a smartphone, a gadget or a wearable device, comprising an optoelectronic assembly as defined above. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Preferred embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings, in which:

[0035] Figure 1 is a functional block diagram of one arrangement of optoelectronic components for photodetection according to the present disclosure;

[0036] Figure 2 yes Figure 1 A cross-sectional view of a first embodiment of a SPAD assembly of a photodetection optoelectronic component;

[0037] Figure 3 yes Figure 1 A cross-sectional view of a second embodiment of a SPAD assembly of a photodetection optoelectronic component;

[0038] Figure 4 yes Figure 3 A top view as indicated by arrow VI; and

[0039] Figures 5 to 10 Shows the formation Figure 3 The different steps of the process of the second embodiment of the resistor filter stack. DETAILED DESCRIPTION

[0040] Figure 1 An integrated photodetection semiconductor optoelectronic component 300 according to the present disclosure is shown. The component 300 is composed of Figure 1 Component 300 can also function as a photodetector. These types of photodetectors are commonly found in various electronic devices, such as smartphones and wearable devices.

[0041] The photodetector 300 is designed to measure the intensity of each of the two color components of the dichromatic light illuminating the photodetector 300. The dichromatic light DL may originate from a dedicated light source 360. The light source 360 may include one or more light-emitting diodes (LEDs) and / or lasers. The one or more lasers may be of the vertical cavity surface emitting (VCSEL) type.

[0042] In a preferred application, for example, the two color components C1 and C2 of the dichromatic light DL from the light source 360 are near infrared or NIR light (C1) and near ultraviolet-blue light (C2), respectively. This may be the case, for example, when the photodetector 300 is used for vital sign monitoring or spectroscopy. In such an application, the dichromatic light DL from the light source 360 is irradiated onto the surface S of the object to be analyzed. The dichromatic light DL reflected from the surface S is then detected by the photodetector 300. Figure 1 In FIG, a first color component C1 (eg, near infrared or NIR) of the dichroic light DL is represented by a dotted arrow, and a second color component C2 (eg, blue-ultraviolet) is represented by a dotted arrow.

[0043] The photodetector 300 includes a SPAD component 302 triggered by incident dichroic light DL, and an electronic circuit 304 for reading out and processing detection signals S1 and S2 delivered by the SPAD component 302 .

[0044] The SPAD assembly 302 includes a first single-photon avalanche diode or SPAD 306, a second single-photon avalanche diode or SPAD 308, and a semiconductor optical long-pass filter 310. Both SPADs 306 and 308 are adapted to detect photons over a wide wavelength range. This means that the light sensitivity of both SPADs 306 and 308 covers the spectrum from infrared to visible light to ultraviolet light. Both SPADs 306 and 308 are arranged in close proximity to each other.

[0045] In an alternative embodiment, the SPAD assembly 302 may be replaced by a SPAD array assembly. In this alternative embodiment, each SPAD 306, 308 is replaced by a SPAD array, such as a SiPM.

[0046] The semiconductor optical long-pass filter 310 is associated with the first SPAD 306. It allows the first color component C1 of the two color components of the dichroic light DL to pass therethrough, and blocks the second color component C2 of the two color components of the dichroic light.

[0047] Electronic circuit 304 includes readout electronics 312, a microprocessor 314, and a time-to-digital converter (TDC) 316. Readout electronics 312 conditions the two detection signals S1 and S2 delivered by SPADs 306 and 308, and then transmits the conditioned signals N1 and N2 to processor 314 for analysis. Readout electronics 312 also transmits trigger signals T1 and T2 to TDC 316 based on the detection signals S1 and S2.

[0048] exist Figure 1 In the example shown, the readout electronics 312 comprises three stages, namely a separator stage 318, a discriminator stage 320 and a conversion stage 322. The function of the separator stage 318 is to replicate each of the detection signals S1 and S2 so that they are available to the conversion stage 322 and the TDC 316. Figure 1 In FIG, the splitter stage 318 includes a separate splitter for each of the two SPADs 306 and 308. Based on its replication function, the splitter stage 318 provides four signals S1.1, S1.2, S2.1 and S2.2 to the discriminator stage 320. In the discriminator stage 320, the four signals are thresholded to improve the signal-to-noise ratio and prevent false detections. Figure 1 , the discriminator stage 320 comprises four individual discriminators. The discriminator stage 320 outputs four threshold signals T1, T2, T3 and T4, two of which (T1, T2) are fed to the time-to-digital converter 316 and the other two (T3, T4) are fed to the conversion stage 322.

[0049] In conversion stage 322, signals T3 and T4 are converted into preliminary intensity signals N1 and N2, respectively. Conversion stage 322 can be implemented as a counter. In this case, preliminary intensity signals N1 and N2 correspond to the photon detection rate of each SPAD 306 and 308, that is, the frequency at which each SPAD is triggered per unit time. If conversion stage 322 is implemented as a charge-to-digital converter (QDC), the preliminary intensity signals N1 and N2 are time-integrated signals. Hereinafter, we will assume that conversion stage 322 is a digital counter, and therefore preliminary intensity signals N1 and N2 are photon detection rates.

[0050] Time-to-digital converter (TDC) 316 is an optional component of electronic circuit 304. It enables photodetector 300 to perform time-of-flight measurements. If photodetector 300 is equipped with TDC 316, it is preferably connected to light source 360. Light emission from light source 360 will then initiate time recording by TDC 316. Time recording can be stopped when TDC 316 receives trigger signals T1 and / or T2 from readout electronics 312.

[0051] The processor 314 receives as input the photon detection rates N1, N2 from the readout electronics 312. Optionally, it may also receive as an additional input a time measurement value M from the TDC 316. The processor 314 is adapted to provide a first intensity output signal I1 indicating the intensity of the first color component C1 and a second intensity output signal I2 indicating the intensity of the second color component C2 based on the two photon detection rates N1 and N2. I2 is determined by the processor 314 using a difference analysis, which will be explained further below.

[0052] We will now turn to Figure 2 , which shows a first possible embodiment of the structure of the SPAD component 302.

[0053] Figure 2 The SPAD assembly 302 shown in FIG is a monolithic structure preferably manufactured using a CMOS process. Two SPADs 306 and 308 are arranged adjacent to each other. Both SPADs 306 and 308 are identical. This means they have the same PN junction structure. The structures of both SPADs 306 and 308 can be any standard design. Figure 2 The design shown in the figure involves a shallow p+ anode 324 in a deep N well 326. Each SPAD 306, 308 can have a guard ring 328 and / or an enrichment layer 330 to prevent premature edge breakdown. Each SPAD 306, 308 also includes an internal anode contact 332, an intermediate cathode contact 334, and an external substrate contact 336. The substrate 338 can be p-type. Each SPAD 306, 308 has an active surface area 340 that allows detection of photons entering the SPAD. The bulk B of each SPAD 306, 308 can include local enrichment regions 342, 344 to improve current flow between the bulk B and the substrate contact 336 or between the bulk B and the cathode contact 334, respectively. The dopants used in the SPADs 306 and 308 can be boron and phosphorus.

[0054] In accordance with Figure 2In the first embodiment, semiconductor optical longpass filter 310 completely covers active surface area 340 of first SPAD 306. Due to longpass filter 310, first SPAD 306 acts as a long wavelength sensitive sensor. In contrast, second SPAD 308 does not have a longpass filter and thus acts as a wide wavelength sensor.

[0055] Figure 2 The longpass filter 310 shown is a single layer of semiconductor material. This layer is deposited directly onto the active surface area 340 of the first SPAD 306. An internal anode contact 332 surrounds the longpass filter layer 310. Preferred semiconductor materials for the longpass filter 310 are silicon, germanium, gallium arsenide, or gallium nitride. Polycrystalline silicon is particularly preferred because it is readily available at semiconductor fabrication facilities. The cutoff wavelength, or the wavelength at which the semiconductor filter 310 is opaque to electromagnetic radiation, depends on its thickness E. Therefore, the cutoff wavelength of the longpass filter 310 can be calibrated by adjusting its thickness E. In one embodiment, the longpass filter 310 can be implemented as a semiconductor thin film made of polycrystalline silicon with a thickness of approximately 500 nm. This filter has a cutoff wavelength of approximately 400 nm, thus blocking ultraviolet (UV) radiation.

[0056] We will now turn to Figure 3 and Figure 4 , which are related to a second possible embodiment of the SPAD component 302. The second embodiment is similar in many respects to Figure 2 The second embodiment is similar to the first embodiment. In the following, we will only describe the differences of the second embodiment relative to the first embodiment. Regarding the similarities, reference is made to the above description.

[0057] exist Figure 3 In a second embodiment, the active surface area 340 of the first SPAD 306 is covered by a resistor filter stack 346. The resistor filter stack 346 includes five layers: a bottom dielectric layer 348, a longpass filter layer 310 covering the bottom dielectric layer 348, a middle dielectric layer 350 covering the longpass filter layer 310, an electrical contact layer 352, and a top patterned optical mask layer 354 covering the middle dielectric layer 350. In this embodiment, the longpass filter 310 also serves as a functional electronic component that is part of the electronic circuit. More specifically, the longpass filter 310 also serves as a passive quenching resistor for the first SPAD 306.

[0058] The bottom dielectric layer 348 is a field oxide layer that acts as an electrical isolator between the resistive long-pass filter 310 and the shallow extrinsic semiconductor layer 324 of the PN junction of the first SPAD 306. The resistive long-pass filter 310 is located on top of the bottom dielectric layer 348.

[0059] Reference Figure 4 , Figure 4 for Figure 3 The top view shown by arrow VI. Figure 4 In the top view of FIG, the intermediate dielectric layer 350 and the electrical contacts 352 are omitted to better show the relative arrangement of the optical mask 354 and the resistive long pass filter 310. Figure 4 It can be clearly seen that the long pass filter 310 has the shape of a meandering conductive path that forms a resistor. The meandering path can be a sequence of long tracks 357 and short tracks 355. The long pass filter 310 defines a set of non-filtering gaps 359 (see Figure 3 ). A first end 356 of the resistive longpass filter 310 is electrically connected to the shallow extrinsic semiconductor layer 324 of the PN junction of the first SPAD 306. A second opposite end 358 of the resistive longpass filter 310 is electrically connected to the electrical contact 352. Thus, the SPAD 306 and the resistive longpass filter 310 are connected in series.

[0060] The semiconductor material of the longpass filter 310 is doped so that the electrical material properties of the longpass filter are adapted to its additional role as a quenching resistor. The doping of the semiconductor material of the longpass filter 310 may be p+ type doping, and the dopant may be boron.

[0061] Intermediate dielectric layer 350 covers the entire longpass filter structure 310. Intermediate dielectric layer 350 can be made of, for example, silicon nitride. The material of intermediate dielectric layer 350 fills gap 359. Electrically insulating layer 350 is transparent to the dichroic light DL. It also prevents short circuits from occurring within resistive longpass filter 310.

[0062] The resistor contact 352 is preferably made of metal. It can take the form of a strip that fills the gap in the intermediate dielectric layer 350.

[0063] The optical mask 354 is preferably made of metal and is opaque to the dichroic light DL. Figure 3 and 4 In the embodiment shown, it comprises a set of bars 361. Each bar 361 is located directly above one of the gaps 359 (see FIG. Figure 3 ). Thus, each strip 361 shields the gaps 359 below it from the influence of the dichroic light DL. In this way, the entire group of gaps 359 is covered by a set of strips 361 forming an optical mask. This set of shielding strips 361 is offset relative to the set of long tracks 357 of the resistive longpass filter 310 in a direction X transverse to the main direction D of light entering the SPAD assembly 302.

[0064] The effect of the resistive filter stack 346 is that the incident dichromatic light DL can only reach those areas of the active surface area 340 of the first SPAD 306 that are covered by the long tracks 357 of the longpass filter 310. More precisely, because the long track group 357 absorbs the second component C2 of the dichromatic light DL, only the first color component C1 of the dichromatic light DL can reach these areas. As a result, the PN junction of the first SPAD 306 detects only the first color component C1.

[0065] The processor 314 preferably operates as follows to generate the first intensity output signal I1 and the second intensity output signal I2:

[0066] The processor 314 obtains the first photon detection rate N1 from the counter 322. It then divides this signal by the predetermined and known photon detection efficiency of the first SPAD 306 at the wavelength of the first color component C1. The result is a first intensity output signal I1.

[0067] The difference analysis for calculating the second intensity output signal I2 comprises the following steps:

[0068] The processor 314 first obtains the first photon detection rate N1 and the second photon detection rate N2 from the counter 322. Then, it calculates the second intensity output signal I2 using the following formula:

[0069]

[0070] In this equation, a and b are constants that are predetermined by the photon detection efficiencies of the first SPAD 306 and the second SPAD 308 at wavelengths corresponding to the two color components C1 and C2.

[0071] Figures 5 to 10 An exemplary method of forming a resistive filter stack 346 on the top surface of the first SPAD 306 is shown.

[0072] This method starts from Figure 5 Let's start. The basic SPAD structure (indicated by reference numeral 10 ) already exists, implemented through implantation, annealing, and etching processes. It includes a bulk 12 and a field oxide layer 14 covering the bulk 12 .

[0073] In one embodiment, the single field oxide layer 14 may be replaced by a layer stack comprising several oxide and metal layers, preferably formed using a CMOS process.

[0074] The first step is to etch a gap 16 in the field oxide layer 14 to expose a portion of the shallow extrinsic semiconductor layer 324. The result of the first step is as follows: Figure 6 shown.

[0075] The next step is to form the resistive longpass filter 310. This is done by first depositing a polysilicon layer. This layer is then patterned to obtain a cross-stripe geometry. The result is Figure 7 shown.

[0076] This is followed by the deposition of a transparent interlayer dielectric layer 350, the result of which is Figure 8 shown.

[0077] The next step is an etching step which creates a gap 18 in the interlayer dielectric layer 350. This gap 18 exposes the second end 358 of the longpass filter 310. Simultaneously, another gap 20 is etched into the field oxide layer 14 to provide access to the enrichment layer in the bulk 12. The result of this step is shown in FIG. Figure 9 shown.

[0078] The final step is the metallization step. Metal (e.g. aluminum) is deposited on selected areas to obtain cathode contacts 334, substrate contacts 336, resistor contacts 352, and a set of masking strips 354. The result is Figure 10 shown.

[0079] In one embodiment, metal layers 334 , 336 , 352 , and 354 may be covered by a dielectric passivation layer (eg, an oxide layer).

[0080] In further embodiments, the integrated photodetection semiconductor optoelectronic component of the present disclosure may include one or more additional SPADs with one or more corresponding additional semiconductor optical long-pass filters for measuring the intensity of one or more additional color components of the incident light. The additional long-pass filters may have increased cut-off wavelengths. This can be achieved by using absorption layers of different thicknesses. The differential analysis can then be expanded accordingly. Similarly, one can also add one or more readout channels to the electronic circuit.

[0081] The integrated photodetection semiconductor optoelectronic component of the present invention has the following technical advantages:

[0082] - They can simultaneously detect optical signals at two different wavelength intervals down to the single-photon level with fast timing response, intrinsic amplification, and very high precision;

[0083] - They can accurately detect blue and UV light without the need for expensive short-pass filters (such as Bragg filters);

[0084] - Their fabrication is compatible with CMOS processes, which reduces costs;

[0085] - In the variant in which the longpass filters double as functional electronic components, they have a particularly high geometric fill factor and are easy to manufacture.

Claims

1. An integrated photodetection semiconductor optoelectronic component (300) for measuring the intensity (I1, I2) of each of two color components (C1, C2) of dichroic light (DL) illuminating the optoelectronic component, the component (300) comprising: a first SPAD (306) adapted to detect photons within a wide wavelength range, the first SPAD comprising an active surface area (340) allowing photons to be detected to enter the first SPAD; a second SPAD (308) adapted to detect photons within a wide wavelength range, the second SPAD being arranged adjacent to the first SPAD (306); a semiconductor optical long-pass filter (310) at least partially covering an effective surface area (340) of the first SPAD, the long-pass filter (310) allowing a first color component (C1) of the two color components of the dichroic light (DL) to pass through and blocking a second color component (C2) of the two color components of the dichroic light (DL); An electronic circuit (304) for reading and processing the detection signal (S1) delivered by the first SPAD and the detection signal (S2) delivered by the second SPAD, the electronic circuit being adapted to: i) providing a first intensity output signal I1 indicating the intensity of the first color component (C1) based on the detection signal (S1) delivered by the first SPAD; and ii) providing a second intensity output signal I2 indicating the intensity of the second color component (C2) by difference analysis based on the detection signal (S1) delivered by the first SPAD and the detection signal (S2) delivered by the second SPAD; The difference analysis performed by the electronic circuit (304) to provide the second intensity output signal I2 comprises the following steps: determining a first photon detection rate N1 based on a detection signal (S1) transmitted by the first SPAD (306); determining a second photon detection rate N2 based on the detection signal (S2) delivered by the second SPAD (308); and The second intensity output signal I2 is calculated using the following formula: ， Wherein, a and b are constants, which are predetermined by the photon detection efficiencies of the first SPAD and the second SPAD at wavelengths corresponding to the two color components.

2. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein: The long pass filter (310) is a single layer of semiconductor material deposited over the active surface area (340) of the first SPAD.

3. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein: The semiconductor material of the long-pass filter (310) is silicon, germanium, gallium arsenide or gallium nitride.

4. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein: The long-pass filter (310) also serves as a functional electronic component as part of the circuit.

5. The integrated photodetection semiconductor optoelectronic component (300) according to claim 4, wherein: The semiconductor material of the long-pass filter (310) is doped so that the electrical material properties of the long-pass filter are suitable for its additional role as the functional electronic component.

6. The integrated photodetection semiconductor optoelectronic component (300) according to claim 4 or 5, wherein: The long-pass filter (310) also serves as a passive quenching resistor for the first SPAD (306).

7. The integrated photodetection semiconductor optoelectronic component (300) according to claim 6, wherein: The long pass filter (310) has a shape that forms a meandering conductive path for the passive quenching resistor.

8. The integrated photodetection semiconductor optoelectronic component (300) according to claim 7, wherein: The meandering shape of the long pass filter (310) defines a set of non-filtering gaps (359), and wherein the gaps (359) are covered by an optical mask (354) that is opaque to the dichroic light (DL).

9. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein: The electronic circuit (304) includes a time-to-digital converter (316) for time-of-flight measurement.

10. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein The first SPAD (306) and the second SPAD (308) have the same pn junction structure.

11. The integrated photodetection semiconductor optoelectronic component (300) according to claim 1, wherein The two color components (C1, C2) of the dichroic light are near infrared light and near ultraviolet-blue light respectively.

12. The integrated photodetecting semiconductor optoelectronic component of claim 1 further comprising one or more additional SPADs with one or more corresponding additional semiconductor optical longpass filters for measuring the intensity of one or more additional color components of incident light.

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