Template, workpiece and alignment method

Abstract

The template has alignment marks. The alignment marks include a first main pattern and a first auxiliary pattern. The first main pattern is composed of a first part and a second part arranged in a prescribed repeating pattern. The first auxiliary pattern is composed of a pattern opposite to the repeating pattern in the area outside the ends of the first main pattern.

Description

[0001] Related applications

[0002] This application is based on and claims the benefit of priority arising from the prior Japanese Patent Application No. 2021-049180, filed on March 23, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present invention relate to templates, workpieces, and alignment methods. Background Technology

[0004] In the manufacturing process of semiconductor devices, an imprinting method is used to form fine patterns on workpieces such as wafers. In this method, an alignment process is performed to align the patterned template with the workpiece. Alignment marks are used in this alignment process, respectively placed on the template and the workpiece. If inspection light is shone onto the alignment marks, noise caused by scattered light may occur at the ends of the alignment marks. To improve alignment accuracy, it is necessary to suppress the effects of noise generated at the ends of the alignment marks. Summary of the Invention

[0005] Embodiments of the present invention provide a template, a workpiece, and an alignment method capable of suppressing noise at the ends of alignment marks.

[0006] According to one embodiment of the present invention, a template is provided. The template includes alignment marks. The alignment marks include a first main pattern and a first auxiliary pattern. The first main pattern is composed of a first portion and a second portion arranged in a predetermined repeating pattern. The first auxiliary pattern is configured in a pattern opposite to the repeating pattern in the region outside the ends of the first main pattern.

[0007] Based on the above configuration, a template, a workpiece, and an alignment method can be provided that can suppress noise at the end of the alignment mark. Attached Figure Description

[0008] Figure 1 This is a top view showing an example of the configuration of the template according to the first embodiment.

[0009] Figure 2 This is a partially enlarged top view showing an example of the configuration of the alignment mark area of ​​the template according to the first embodiment.

[0010] Figure 3 This is a top view showing an example of the configuration of the wafer according to the first embodiment.

[0011] Figure 4This is a partially enlarged top view showing an example of the configuration of the alignment region of the wafer according to the first embodiment.

[0012] Figure 5 This is a diagram showing an example of the configuration of the alignment device according to the first embodiment.

[0013] Figure 6 This is a flowchart illustrating an example of the alignment method according to the first embodiment.

[0014] Figure 7 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the first embodiment.

[0015] Figure 8 This is a partially enlarged top view showing an example of the configuration of the second LS pattern and the second LS auxiliary pattern according to the first embodiment.

[0016] Figure 9 This is a partially enlarged top view showing an example of the configuration of the auxiliary film of the first LS auxiliary pattern according to the first embodiment.

[0017] Figure 10 This is a schematic diagram illustrating an example of the effect of the auxiliary film of the first LS auxiliary pattern according to the first embodiment.

[0018] Figure 11 This is a partially enlarged top view showing an example of the configuration of the checkerboard pattern and checkerboard auxiliary pattern according to the first embodiment.

[0019] Figure 12 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the second embodiment.

[0020] Figure 13 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the third embodiment.

[0021] Figure 14 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the fourth embodiment.

[0022] Figure 15 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the fifth embodiment.

[0023] Figure 16 This is a partially enlarged top view showing an example of the configuration of the first LS pattern and the first LS auxiliary pattern according to the sixth embodiment.

[0024] Figure 17 This is a partially enlarged top view showing an example of the configuration of the alignment area of ​​the template according to the seventh embodiment.

[0025] Figure 18 This is a partially enlarged top view showing an example of the configuration of the alignment region of the wafer according to the seventh embodiment. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to these embodiments. Furthermore, the constituent elements in the embodiments include elements readily conceived by those skilled in the art or substantially identical elements.

[0027] [First Implementation] <Template>

[0028] Figure 1 This is a top view showing an example of the configuration of template 1 according to the first embodiment. In the figure, the X-axis corresponds to the left-right direction of the horizontal plane, the Y-axis corresponds to the front-back direction of the horizontal plane, and the Z-axis corresponds to the vertical (up-down) direction perpendicular to the horizontal plane.

[0029] Template 1 is a transparent material that allows visible light and ultraviolet light to pass through; it is a plate-shaped component made of a material, for example, quartz as the main component. The template 1 illustrated here is rectangular, for example, a square with a side length of approximately 150 mm.

[0030] A downward-protruding, platform-shaped mesa portion 10 is formed in the center of template 1. The lower surface of the mesa portion 10 has a device pattern area 11 and an alignment area 12. Furthermore, Figure 1 An example is shown of a circular platform 10 when viewed in planar (top or bottom) view, but the platform 10 can also be rectangular in planar view. The device pattern area 11 is formed with a pattern (recess or protrusion) embossed onto the workpiece.

[0031] Alignment area 12 is formed with alignment marks used in the alignment process of aligning the template 1 with the workpiece. Alternatively, alignment area 12 may also be formed within device pattern area 11.

[0032] Figure 2 This is a partially enlarged top view showing an example of the configuration of the alignment region 12 of the template 1 according to the first embodiment. A first alignment mark 22 and a second alignment mark 23 are formed in the alignment region 12.

[0033] The first alignment mark 22 is a mark used to detect the positional offset in the X-axis direction between the template 1 and the workpiece, and includes the first LS pattern 22A (first main pattern) and the first LS auxiliary pattern 22B (first auxiliary pattern).

[0034] Pattern 22A of the 1LS is a pattern in which multiple linear reflective films for reflected inspection light and linear transmissive regions for transmitted inspection light are alternately arranged parallel to the Y-axis; that is, a pattern of lines and spaces parallel to the Y-axis. The reflective film contains reflective materials such as chromium as the main component.

[0035] The first LS auxiliary pattern 22B is formed at the end of the first LS pattern 22A along the Y-axis and is a pattern that suppresses noise generated near that end.

[0036] The second alignment mark 23 is a mark used to detect the positional offset in the Y-axis direction between the template 1 and the workpiece, and includes the second LS pattern 23A (first main pattern) and the second LS auxiliary pattern 23B (first auxiliary pattern).

[0037] Pattern 23A of the 2LS is a pattern in which multiple linear reflective films of reflective inspection light and linear transmissive regions of transmissive inspection light are alternately arranged in a manner parallel to the X-axis, that is, a pattern of lines and spaces parallel to the X-axis.

[0038] The second LS auxiliary pattern 23B is formed at the end of the X-axis of the second LS pattern 23A and is a pattern that suppresses noise generated near that end.

[0039] <Components being processed>

[0040] Figure 3 This is a top view illustrating an example of the configuration of the wafer 51 according to the first embodiment. The wafer 51 is an example of a processed component that is processed by imprinting using a template 1. The wafer 51 may be, for example, a component including a substrate made of silicon or the like, a substrate pattern formed on the substrate, and a processed layer formed on the substrate pattern. The processed layer may be, for example, an insulating film, a metal film (conductive film), a semiconductor film, etc.

[0041] like Figure 3 As shown, the upper surface (processed surface) of the wafer 51 involved in this embodiment is formed with a plurality of device regions 61 and a plurality of alignment regions 62.

[0042] Device region 61 is the region where a predetermined device structure (e.g., 3D NAND) is formed. After a predetermined layer (protective layer, resist layer, etc.) is formed in device region 61, it is imprinted using template 1. After the predetermined device structure is formed in multiple device regions 61, each device region 61 is cut to form a single wafer, thereby manufacturing a semiconductor device.

[0043] Alignment region 62 is formed with alignment marks used in the alignment process for aligning the wafer 51 with the template 1. Alternatively, alignment region 62 may also be formed within device region 61.

[0044] Figure 4 This is a partially enlarged top view showing an example of the configuration of the alignment region 62 of the wafer 51 according to the first embodiment. Alignment marks 71 are formed in the alignment region 62.

[0045] The alignment marks 71 formed in wafer 51 include a checkerboard pattern 71A (second main pattern) and a checkerboard auxiliary pattern 71B (second auxiliary pattern). Checkerboard pattern 71A is a pattern in which multiple rectangular reflective films for reflected inspection light and multiple rectangular transmission areas for transmitted inspection light are arranged in a checkerboard pattern. Checkerboard auxiliary pattern 71B is disposed at the ends of checkerboard pattern 71A along the Y and X axes and is a pattern used to suppress noise generated near these ends.

[0046] Alignment device

[0047] Figure 5 This is a diagram showing an example of the configuration of the alignment device 200 according to the first embodiment. The alignment device 200 is a device for aligning the position between the wafer 51 and the template 1, and includes a microscope 201, an illumination 202, a template holding part 203, a wafer holding part 204, and a displacement mechanism 205.

[0048] A wafer holding section 204 holds a wafer 51. A template holding section 203 holds a template 1 above the wafer 51. A displacement mechanism 205 displaces at least one of the wafer holding section 204 and the template holding section 203, changing the relative position between the wafer 51 and the template 1. An illumination 202 is positioned above the template holding section 203 and illuminates inspection light toward the alignment area 12 of the template 1. The inspection light is, for example, light with a wavelength in the visible light region (approximately 360 nm to approximately 830 nm). Two of the four illuminations 202 are arranged along the X-axis, and the remaining two are arranged along the Y-axis. A microscope 201 is positioned above the template holding section 203 and is a component capable of observing the image (dark-field image) of the reflected light after the inspection light illuminated by the illumination 202 is reflected by the alignment areas 12 and 62. Based on the observation results of the microscope 201, information related to the moiré fringes generated by the overlap of the alignment marks 22 and 23 of the template 1 and the alignment mark 71 of the wafer 51 can be obtained.

[0049] By illuminating the illumination 202, a portion of the inspection light emitted from the illumination 202 passes through the template 1 and diffracts after reaching the first alignment mark 22 or the second alignment mark 23 formed in the alignment region 12. A portion of the diffracted light, excluding the 0th order light, is incident on the microscope 201. Additionally, another portion of the inspection light is transmitted from the template 1 and diffracts after reaching the alignment mark 71 formed in the alignment region 62 of the wafer 51. A portion of this diffracted light, excluding the 0th order light, is incident on the microscope 201. Thus, the microscope 201 can acquire a dark-field image containing an image of the moiré fringes generated by the overlap of the alignment marks 22, 23, and 71. The displacement mechanism 205 aligns the wafer 51 with the template 1 based on this dark-field image (information related to the moiré fringes).

[0050] Alignment Method

[0051] Figure 6 This is a flowchart illustrating an example of the alignment method according to the first embodiment. First, wafer 51 is placed in wafer holding section 204, and template 1 is placed in template holding section 203 (S101). Then, a coarse alignment process is performed so that wafer 51 and template 1 are positioned in approximately appropriate locations (S102). The specific method of the coarse alignment process is not particularly limited, and can be implemented using known techniques as appropriate. The coarse alignment process can be performed using the alignment marks 22, 23, and 71 described above, or it can be performed using specially provided appropriate marks.

[0052] Then, the moiré fringes that appear when inspection light is irradiated from the upper surface of the template 1 toward the alignment area 12 are observed (photographed) using the microscope 201 (S103), and the positional offset between the wafer 51 and the template 1 is detected based on the state of the moiré fringes (S104). The displacement mechanism 205 adjusts the relative position between the wafer 51 and the template 1 to eliminate the detected positional offset (S105).

[0053] When performing the alignment method described above, noise generated at the ends of the first LS pattern 22A, the second LS pattern 23A, and the checkerboard pattern 71A is suppressed by the first LS auxiliary pattern 22B, the second LS auxiliary pattern 23B, and the checkerboard pattern 71B. This enables high-precision detection of positional offsets and high-precision alignment of the wafer 51 with the template 1.

[0054] <Example of LS auxiliary pattern construction>

[0055] Figure 7 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 22A and the first LS auxiliary pattern 22B according to the first embodiment. Figure 7 As shown, a plurality of linear reflective films 31 (an example from Part 1) are arranged parallel to the Y-axis, thereby constituting the first alignment mark 22 (see Figure 1). Figure 2 The first LS pattern 22A is the main part of the pattern. Multiple reflective films 31 are arranged at equal intervals in the X-axis direction. Multiple linear transmission regions S (an example of part 2) are formed between the multiple reflective films 31 to check the transmission of light. The first LS pattern 22A is arranged in the X-axis direction with a first cycle (also called a repeating pattern or construction cycle) encompassing the reflective films 31 and the transmission regions S.

[0056] The first LS auxiliary pattern 22B is configured with a pattern opposite to the repeating pattern of the first LS pattern 22A in the region outside the end E of the first LS pattern 22A. Multiple auxiliary films 41 (third part) are respectively disposed in multiple inversion regions R1, thereby constituting the first LS auxiliary pattern 22B according to this embodiment. The auxiliary films 41 are made of the same material as the reflective film 31, which reflects inspection light, and can be made of the same material as the reflective film 31 or a different material. The multiple auxiliary films 41 are arranged at equal intervals in the X-axis direction. The first LS auxiliary pattern 22B is arranged in the X-axis direction with a second period (construction period) including the auxiliary films 41 and the region between adjacent auxiliary films 41. The second period can have the same interval as the first period. The inversion region R1 is the region outside the end E of the first LS pattern 22A, which is the region that becomes the transmission region S at the repeating pattern (line and spacing pattern) of the first LS pattern 22A. In this embodiment, the transmission region S is extended to the region outside the end E of the first LS pattern 22A. The auxiliary film 41, located in the inversion region R1, suppresses noise caused by scattered light generated near the end E.

[0057] Figure 8 This is a partially enlarged top view showing an example of the configuration of the second LS pattern 23A and the second LS auxiliary pattern 23B according to the first embodiment. The configuration of the second LS pattern 23A and the second LS auxiliary pattern 23B is the same as that of the first LS pattern 22A and the first LS auxiliary pattern 22B after rotating them 90° in the XY plane.

[0058] The following explains the composition and function of the 1LS auxiliary pattern 22B. Figure 9 This is a partially enlarged top view showing an example of the configuration of the auxiliary film 41 of the first LS auxiliary pattern 22B according to the first embodiment. Figure 9 The diagram illustrates the configuration of one cycle C in a pattern of lines and intervals formed by the repetition of the reflective film 31 and the transmission region S.

[0059] like Figure 9 As shown, when the width of the auxiliary film 41 in the X-axis direction (the extension direction of the end E or the offset inspection direction) is set to W2 and the width of the reflective film 31 in the X-axis direction is set to W1, the relationship W2 < W1 holds true. Furthermore, it is preferable that the relationship 0 < W2 < W1 / 2 holds true.

[0060] Figure 10 This is a schematic diagram illustrating an example of the effect of the auxiliary film 41 of the first LS auxiliary pattern 22B according to the first embodiment. If inspection light is shone onto the first alignment mark 22 having the above configuration, then... Figure 10As shown, noise N1+ is generated at end E of the reflective film 31 constituting the first LS pattern 22A. In addition, noise N2- is generated at one end of the auxiliary film 41 constituting the first LS auxiliary pattern 22B (the end on the side of the reflective film 31), and noise N2+ is generated at the other end of the auxiliary film 41 (the end on the side opposite to the end on the side of the reflective film 31).

[0061] At this point, based on Babiné's principle, the phase of the noise N2− at one end of the auxiliary film 41 becomes the phase after a 180° phase reversal relative to the phase of the noise N1+ of the reflective film 31. Therefore, the noise N1+ of the reflective film 31 and the noise N2− at one end of the auxiliary film 41 mutually attenuate each other. Furthermore, the intensity of the noise N2+ at the other end of the auxiliary film 41 is less than the intensity of the noise N1+ of the reflective film 31. Thus, the intensity of the noise generated near end E can be reduced.

[0062] Furthermore, the structure and effect of the first LS auxiliary pattern 22B for the first alignment mark 22 have been described above, and the second LS auxiliary pattern 23B for the second alignment mark 23 is the same.

[0063] Furthermore, in the above example, "Part 1" and "Part 3" are portions that reflect the inspection light (reflective film 31 and auxiliary film 41), and "Part 2" is a portion that transmits the inspection light (transmission area S). However, the implementation is not limited to this; it is also possible for "Part 1" and "Part 3" to be portions that transmit the inspection light, and "Part 2" to be a portion that reflects the inspection light.

[0064] <Example of a checkerboard auxiliary pattern>

[0065] Figure 11 This is a partially enlarged top view showing an example of the configuration of the checkerboard pattern 71A and the checkerboard auxiliary pattern 71B according to the first embodiment. Figure 11 As shown, multiple rectangular reflective films 81 (an example from Part 4) are arranged in a checkerboard pattern to form wafer 51 (see reference). Figure 3 The checkerboard pattern 71A formed on the main part of the alignment mark 71 is provided. Multiple transmission regions S for checking light transmission are formed between the multiple reflective films 81 (an example of Part 5). The checkerboard pattern 71A is arranged in the X-axis and Y-axis directions in a first cycle (also called a repeating pattern or construction cycle) including the reflective films 81 and the transmission regions S.

[0066] The checkerboard auxiliary pattern 71B is configured with a pattern opposite to the repeating pattern of the checkerboard pattern 71A in the region outside the end E of the checkerboard pattern 71A. Multiple auxiliary films 91 (an example from Part 6) are respectively disposed in multiple inversion regions R2, thereby constituting the checkerboard auxiliary pattern 71B according to this embodiment. The auxiliary films 91 are made of the same material as the reflective film 81, reflecting inspection light, and can be made of the same material as the reflective film 81 or a different material. The inversion region R2 is the region outside the end E of the checkerboard pattern 71A, and is the region where the repeating pattern (checkerboard pattern) of the checkerboard pattern 71A becomes the transmission region S. In this embodiment, it is the region where the reflective film 81 is disposed, extending to the region outside the end E. The auxiliary films 91 disposed in the inversion region R2 suppress noise caused by scattered light generated near the end E. The checkerboard auxiliary pattern 71B is arranged in the X-axis direction with a second period (construction period) including the auxiliary films 91 and the regions between adjacent auxiliary films 91. The second period in the X-axis direction can have the same spacing as the first period.

[0067] As shown above, according to this embodiment, by utilizing the auxiliary patterns 22B, 23B, and 71B formed by arranging auxiliary films 41 and 91 at the inversion regions R1 and R2 where the transmission region S should be arranged, noise generated near the ends E of the alignment marks 22, 23, and 71 can be suppressed. This improves the accuracy of alignment.

[0068] Hereinafter, other embodiments will be described with reference to the accompanying drawings. For parts that are the same as or identical to those in the first embodiment, the same reference numerals will be used and their descriptions will be omitted.

[0069] [Second Implementation]

[0070] Figure 12 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 22A and the first LS auxiliary pattern 102B according to the second embodiment. The first LS auxiliary pattern 102B according to this embodiment is configured by distributing a plurality of (two in this example) auxiliary films 41A and 41B in a reversal region R1.

[0071] The auxiliary film 41A has the same configuration as the auxiliary film 41 according to the first embodiment. The auxiliary film 41B is disposed at a position separated from the auxiliary film 41A by a predetermined distance along the Y-axis. In addition, the area of ​​the auxiliary film 41B when viewed in a plane is smaller than that of the auxiliary film 41A. The auxiliary film 41B serves to suppress noise caused by scattered light generated at the end of the auxiliary film 41A opposite to the end on the reflective film 31 side.

[0072] With the above configuration, noise generated near the end E can be further suppressed compared to the first embodiment.

[0073] [Third Implementation]

[0074] Figure 13 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 22A and the first LS auxiliary pattern 112B according to the third embodiment. The first LS auxiliary pattern 112B according to this embodiment is configured by arranging an auxiliary film 41C in each inversion region R1. The further away the auxiliary film 41C is from the reflective film 31, the wider its width (in the offset inspection direction) in the X-axis direction (the direction of the inspection) becomes. Figure 9 The smaller the W2 in the middle, the smaller the value.

[0075] With the above configuration, the generation of scattered light at the end of the auxiliary film 41C opposite to the end of the reflective film 31 can be suppressed, and the noise generated near the end E can be further suppressed compared to the first embodiment.

[0076] [Fourth Implementation]

[0077] Figure 14 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 22A and the first LS auxiliary pattern 122B according to the fourth embodiment. The first LS auxiliary pattern 122B according to this embodiment is configured by arranging three auxiliary films 41D, 41E, and 41F in each inversion region R1.

[0078] The further the auxiliary film 41D is from the reflective film 31, the greater its width in the X-axis direction (the offset inspection direction). Figure 9 The smaller the W2 in the diagram, the smaller the area of ​​the auxiliary membrane 41D. The auxiliary membrane 41E is positioned at a predetermined distance separated from the auxiliary membrane 41D along the Y-axis. The auxiliary membrane 41F is positioned at a predetermined distance separated from the auxiliary membrane 41E along the Y-axis. The areas of the auxiliary membranes 41E and 41F when viewed in a plane are smaller than that of the auxiliary membrane 41D.

[0079] According to the above configuration, the generation of scattered light at the end of the auxiliary film 41D opposite to the end of the reflective film 31 can also be suppressed, and the noise generated near the end E can be further suppressed compared to the first embodiment.

[0080] [Fifth Implementation]

[0081] Figure 15 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 22A and the first LS auxiliary pattern 132B according to the fifth embodiment. An auxiliary film 41G is disposed in each inversion region R1, and an auxiliary film 41H is disposed in the region between each inversion region R1, thereby constituting the first LS auxiliary pattern 132B according to this embodiment.

[0082] The portion of the auxiliary film 41G further away from the reflective film 31 has a wider X-axis (offset inspection direction) width. Figure 9 The smaller the W2 in the image, the better. The auxiliary film 41H is positioned at a predetermined distance from the auxiliary film 41G in the XY plane. The area of ​​the auxiliary film 41H when viewed from the plane is smaller than that of the auxiliary film 41G. The auxiliary film 41H is located at the same position as the reflective film 31 in the Y-axis direction, forming a pattern opposite to that of the auxiliary film 41G.

[0083] According to the above configuration, the generation of scattered light at the end of the auxiliary film 41G opposite to the end of the reflective film 31 can be further suppressed by the auxiliary film 41H, and the noise generated near the end E can be further suppressed compared to the first embodiment.

[0084] [Sixth Implementation]

[0085] Figure 16 This is a partially enlarged top view showing an example of the configuration of the first LS pattern 152A and the first LS auxiliary pattern 152B according to the sixth embodiment. The reflective film 31 of the first LS pattern 152A according to this embodiment includes a plurality of (three in this example) linear films 155 parallel to the Y-axis. Furthermore, the auxiliary film 41I of the first LS auxiliary pattern 152B according to this embodiment includes a plurality of (three in this example) linear films 156 parallel to the Y-axis. Moreover, the plurality of films 156 constituting the auxiliary film 41I may also be from the second to fifth embodiments described above (…). Figures 12-15 The structure shown is as follows.

[0086] According to the above configuration, noise generated near the end E can be suppressed by the action of the auxiliary film 41I disposed in the reversal region R1.

[0087] [Seventh Implementation]

[0088] Figure 17 This is a partially enlarged top view showing an example of the configuration of the alignment area 12 of the template 1 according to the seventh embodiment. Figure 18 This is a partially enlarged top view showing an example of the configuration of the alignment region 62 of the wafer 51 according to the seventh embodiment.

[0089] like Figure 17 As shown, in the alignment area 12 of the template 1 involved in this embodiment, an alignment mark 71 including a checkerboard pattern 71A and a checkerboard auxiliary pattern 71B is formed. Additionally, as... Figure 18As shown, in the alignment region 62 of the wafer 51 involved in this embodiment, a first alignment mark 22 including a first LS pattern 22A and a first LS auxiliary pattern 22B, and a second alignment mark 23 including a second LS pattern 23A and a second LS auxiliary pattern 23B are formed.

[0090] In the first embodiment, an example is shown where alignment marks 22 and 23 in the alignment region 12 of the template 1 are formed in a line and spaced pattern, and alignment marks 71 in the alignment region 62 of the wafer 51 are formed in a checkerboard pattern. However, as shown in this embodiment, the alignment marks 71 in the alignment region 12 of the template 1 may also be formed in a line and spaced pattern, and the alignment marks 22 and 23 in the alignment region 62 of the wafer 51 may also be formed in a checkerboard pattern.

[0091] The foregoing has described several embodiments of the present invention, which are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and are included within the scope of the invention described in the patent claims and its equivalents.

Claims

1. A template having alignment marks, The alignment mark includes: a first main pattern composed of a first part and a second part arranged in a prescribed repeating pattern; and a first auxiliary pattern. The first part is the portion that reflects the inspection light, the second part is the portion that transmits the inspection light, and the first auxiliary pattern is formed by arranging the third part that reflects the inspection light in the inversion region. The inversion region is the area outside the end of the first main pattern, and in the repeating pattern, it is the second part. At the end of the first main pattern near the inverted region, the phase of the noise at the end of the first portion of the first main pattern is reversed by 180° relative to the phase of the noise at the end of the third portion of the nearest first auxiliary pattern.

2. The template according to claim 1, wherein, When the width of the end of the third part extending in the direction of extension is W2 and the width of the end of the first part extending in the direction of extension is W1, the relationship W2 < W1 holds.

3. The template according to claim 2, wherein, The relationship W2 < W1 / 2 holds true.

4. The template according to claim 2, wherein, The further away W2 is from the first part, the smaller it becomes.

5. The template according to claim 1, wherein, Multiple third parts are configured in one of the inverted regions.

6. The template according to claim 1, wherein, One of the first portions comprises a plurality of linear membranes, and one of the third portions comprises a plurality of linear membranes.

7. The template according to any one of claims 1 to 6, wherein, The repeating pattern consists of lines and intervals.

8. The template according to any one of claims 1 to 6, wherein, The repeating pattern is a checkerboard pattern.

9. A workable component, which is processed by imprinting using a template. The workpiece has alignment marks for positioning with the template, the alignment marks comprising: a second main pattern formed by a fourth and a fifth portion arranged in a predetermined repeating pattern; and a second auxiliary pattern. The fourth part is the part that reflects the inspection light, the fifth part is the part that transmits the inspection light, and the second auxiliary pattern is formed by arranging the sixth part, which reflects the inspection light, in the inversion region. The inversion region is the area outside the end of the second main pattern, and in the repeating pattern, it is the fifth part. At the end of the second main pattern near the inverted region, the phase of the noise at the end of the fourth portion of the second main pattern is reversed by 180° relative to the phase of the noise at the end of the sixth portion of the nearest second auxiliary pattern.

10. The processed component according to claim 9, wherein, When the width of the end of the sixth part extending in the direction of extension is W2 and the width of the end of the fourth part extending in the direction of extension is W1, the relationship W2 < W1 holds.

11. The workpiece according to claim 10, wherein, The relationship W2 < W1 / 2 holds true.

12. The workpiece according to claim 10, wherein, The further away W2 is from the fourth part, the smaller it becomes.

13. The processed component according to claim 9, wherein, Multiple sixth parts are configured in one of the inverted regions.

14. The processed component according to claim 9, wherein, One of the fourth portions comprises a plurality of linear membranes, and one of the sixth portions comprises a plurality of linear membranes.

15. The processed component according to any one of claims 9 to 14, wherein, The repeating pattern consists of lines and intervals.

16. The processed component according to any one of claims 9 to 14, wherein, The repeating pattern is a checkerboard pattern.

17. An alignment method comprising: A process in which a template with alignment marks and a workpiece with alignment marks are arranged in a relative manner; The process of irradiating inspection light from the template side; The process of acquiring moiré fringe information related to moiré fringes generated by the illumination of the inspection light; and The process of adjusting the relative position of the template and the component being processed based on the moiré fringe information. The alignment marks of the template include: a first main pattern consisting of a first part and a second part arranged in a predetermined repeating pattern; and a first auxiliary pattern, wherein the first part is a portion that reflects the inspection light, the second part is a portion that transmits the inspection light, and the first auxiliary pattern is formed by arranging a third part that reflects the inspection light in a reversed region, the reversed region being the region outside the end of the first main pattern, and in the repeating pattern being the second part. At the end of the first main pattern near the inversion region, the phase of the noise at the end of the first portion of the first main pattern is reversed by 180° relative to the phase of the noise at the end of the third portion of the nearest adjacent first auxiliary pattern. The alignment marks of the workpiece include: a second main pattern consisting of a fourth part and a fifth part arranged in a prescribed repeating pattern; The second auxiliary pattern includes a fourth portion that reflects the inspection light and a fifth portion that transmits the inspection light. The second auxiliary pattern is formed by arranging a sixth portion that reflects the inspection light in a reversed region. This reversed region is the area outside the end of the second main pattern and is the fifth portion in the repeating pattern. At the end of the second main pattern near the inverted region, the phase of the noise at the end of the fourth portion of the second main pattern is reversed by 180° relative to the phase of the noise at the end of the sixth portion of the nearest second auxiliary pattern.

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