A coil-free structure dynamic polarization vortex giant inductor and a preparation method thereof

Abstract

The application discloses a dynamic polarization vortex giant inductor without a coil structure and a preparation method thereof. The structure of the giant inductor is sequentially arranged from bottom to top as a substrate, a bottom electrode layer, an inductor material layer and a top electrode, wherein the inductor material layer is a ferroelectric thin film material with dynamic polarization vortex. Compared with a traditional coil type inductor, the giant inductor based on the dynamic polarization vortex inductance effect has the advantages of high integration, large inductance density and inductance value without attenuation with working current, and has great application value in the fields of microelectronics, military industry, aerospace and the like.

Description

Technical Field

[0001] This invention relates to the field of electronic components technology, and more specifically to a coilless dynamically polarized vortex giant inductor and its fabrication method. Background Technology

[0002] Inductors are fundamental electronic components capable of converting electromagnetic energy into various forms, and they have important applications in energy storage, inversion, filtering, and signal tuning. For traditional inductors, a spiral coil and magnetic core structure are almost essential, and the inductance density is therefore directly proportional to the product of the number of turns and the cross-sectional area of ​​the coil. These characteristics make it very difficult to fabricate miniaturized inductor devices with high inductance density. Furthermore, the leakage flux of spiral coils inevitably causes the inductance density to decrease with increasing operating current. These problems make it difficult for traditional coil-structure inductors to meet the demands of practical applications.

[0003] With the rapid development of the electronics industry, there is an urgent need for inductors with higher integration and inductance density. To this end, various inductor devices have been developed, including planar spiral inductors, ferrite inductors, and ferrite beads. Planar spiral or chip inductors offer higher integration than traditional wire-wound inductors, but their inductance density is lower. Ferrite inductors and ferrite beads, while offering higher inductance density, suffer from problems such as large size, low integration, and limited operating frequency. Therefore, obtaining a coilless inductor that combines high inductance density and high integration is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] In view of this, the present invention provides a coilless dynamically polarized vortex giant inductor and its fabrication method. Based on the characteristics of dynamically polarized vortices exhibiting induced and rotating motions under the action of an external field (referred to as the dynamic polarized vortex inductance effect), an inductance density of up to 100 mH / cm² is obtained by using a ferroelectric thin film with dynamically polarized vortices as the inductor material layer. 2 The above describes a dynamically polarized vortex giant inductor without a coil structure.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A coilless structure of a dynamically polarized vortex giant inductor, wherein the giant inductor has a structure from bottom to top consisting of a substrate layer, a bottom electrode layer, an inductor material layer and a top electrode;

[0007] The inductive material layer is a ferroelectric thin film with dynamic polarization vortices.

[0008] Optionally, in the above-mentioned giant inductor, the substrate layer is made of one or more of SrTiO3, NdGaO3, TbScO3, GdScO3, DyScO3, SmScO3, and NdScO3; the thickness of the substrate layer is 1 nm to 10 mm.

[0009] Optionally, in the above-mentioned giant inductor, when the material of the bottom electrode layer is SrRuO3, the thickness of the bottom electrode layer is 1 to 200 nm.

[0010] Optionally, in the aforementioned giant inductor, the inductor material layer is made of PbZr. 0.2 Ti 0.8 O3, PbZr 0.1 Ti 0.9 One or more of O3, PbTiO3, BiFeO3, and BaTiO3; the thickness of the inductive material layer is 1 to 1000 nm.

[0011] Optionally, in the aforementioned giant inductor, the top electrode is made of one or more of Au, Ag, Pt, TiNx, and SrRuO3; the area of ​​the top electrode is 1×10⁻⁶. -8 ~1×10 -2 cm 2 The thickness of the top electrode is 1–1000 nm.

[0012] Optionally, the motion mode of the dynamically polarized vortex under the action of an external field includes one or more of the following: induced, quenched, rotating, quasi-rotating, expanding, merging, shrinking, and canceling; the size of the dynamically polarized vortex is 0.1 to 400 nm.

[0013] A method for fabricating a dynamically polarized vortex giant inductor without coil structure includes the following steps:

[0014] Step 1: Grow a SrRuO3 thin film bottom electrode layer on the substrate using pulsed laser deposition;

[0015] Step 2: An inductive material layer is grown on the upper surface of the SrRuO3 thin film bottom electrode layer using pulsed laser deposition.

[0016] Step 3: Grow a top electrode layer on the upper surface of the inductor thin film of the inductor material layer using pulsed laser deposition, magnetron sputtering, or ion sputtering.

[0017] Optionally, in the above method for fabricating the giant inductor, the operating conditions for the pulsed laser deposition method in step 2 include: a vacuum degree of 1×10⁻⁶ in the sample deposition cavity. -10 ~1×10 -5Pa; deposition temperature 400–800℃; deposition oxygen pressure 50–300 mtorr; laser energy density 0.1–3 J·cm⁻¹ -2 The laser pulse frequency is 1–50 Hz.

[0018] As can be seen from the above technical solution, compared with the prior art, this invention discloses a coilless dynamically polarized vortex giant inductor and its fabrication method. The structure of the giant inductor, from bottom to top, consists of a substrate layer, a bottom electrode layer, an inductor material layer, and a top electrode layer. Based on the dynamic polarized vortex inductance effect, this invention realizes a coilless dynamically polarized vortex giant inductor by using a ferroelectric thin film with dynamic polarized vortices as the inductor material layer, achieving an inductance density of up to 100 mH / cm². 2 In conclusion, compared to traditional coil inductors, giant inductors based on the dynamic polarization eddy current effect have an inductance density that is 10 times higher. 3 The volume has been reduced by 10 times. 6 The inductance density increases with the increase of the external operating current. Therefore, the giant inductor provided by this invention has outstanding advantages such as high integration, large inductance density, and no decrease in inductance value with operating current, and has significant application value in microelectronics, military industry, aerospace and other fields. This invention also provides a method for fabricating the giant inductor. The method is simple to operate. By changing process parameters such as epitaxial stress, annealing rate, oxygen pressure and laser energy, the elastic energy, electric boundary conditions and gradient energy in the thin film material can be effectively controlled, thereby preparing an inductor material layer with dynamic polarization vortices and a giant inductor. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0020] Figure 1 The attached figure is a schematic diagram of the structure of the giant inductor provided by the present invention;

[0021] Figure 2 The attached figure shows (111)-PbZr in Example 1. 0.2 Ti 0.8 Piezoelectric microscopy (PFM) images of O3 thin films;

[0022] Figure 3 The attached figure shows (111)-PbZr in Example 1. 0.2 Ti 0.8 Schematic diagram of dynamic polarization vortex inductance effect in O3 thin film;

[0023] Figure 4 The attached figure shows (111)-PbZr in Example 1. 0.2 Ti 0.8 Phase field simulation diagram of dynamic polarization vortices inside O3 thin film;

[0024] Figure 5 The attached figure shows (111)-PbZr in Example 1. 0.2 Ti 0.8 Inductance density-frequency curves of the O3 giant inductor under different test currents. Detailed Implementation

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] This invention provides a dynamically polarized vortex giant inductor without a coil structure, such as... Figure 1 As shown, the structure of the giant inductor, from bottom to top, consists of a substrate layer 1, a bottom electrode layer 2, an inductor material layer 3, and a top electrode 1.

[0027] In one embodiment, the substrate 1 is preferably made of one or more of SrTiO3, NdGaO3, TbScO3, GdScO3, DyScO3, SmScO3, and NdScO3; the thickness of the substrate 1 is 1 nm to 10 mm.

[0028] The bottom electrode layer 2 is made of SrRuO3; the thickness of the bottom electrode layer 2 is 1–200 nm.

[0029] The material of inductor layer 3 is PbZr. 0.2 Ti 0.8 O3, PbZr 0.1 Ti 0.9 One or more of O3, PbTiO3, BiFeO3, and BaTiO3 are present in the inductor material; the thickness of the inductor material layer 3 is 1–1000 nm; in the inductor material layer 3, the dynamic polarization vortex can move under the action of an external field, and the movement mode of the dynamic polarization vortex is one or more of the following: induced, quenched, rotating, quasi-rotating, expanding, merging, shrinking, and canceling; the size of the dynamic polarization vortex is 0.1–400 nm.

[0030] The top electrode 4 is made of one or more of Au, Ag, Pt, TiNx, and SrRuO3; the area of ​​the top electrode 4 is 1×10⁻⁶.-8 ~1×10 -2 cm 2 The thickness of the top electrode is 1–1000 nm.

[0031] To further optimize the above technical solution, the substrate 1 is made of SrTiO3 and has a thickness of 0.5–1 mm.

[0032] To further optimize the above technical solution, the bottom electrode layer 2 is made of SrRuO3; the thickness of the bottom electrode layer 2 is 1-60 nm.

[0033] To further optimize the above technical solution, the material of the inductor layer 3 is PbZr. 0.2 Ti 0.8 O3, with a thickness of 60–300 nm, contains dynamic polarized vortices, ranging in size from 0.1 to 20 nm, that can be induced by external electric fields or force loads within the domains of the inductor material. Specifically, no polarized vortices exist within the inductor material when there is no external electric field or stress. However, when subjected to an external field, abundant polarized vortices are induced within the domains or at the domain boundaries. When excited by an external electrical signal, these polarized vortices undergo induced, quenched, rotating, and rotation-like movements, thereby inducing a magnetic field component parallel to the direction of the external electric field, which in turn causes the material to exhibit inductive properties.

[0034] To further optimize the above technical solution, the top electrode 4 can be circular, square, or triangular, etc., and the present invention does not limit it in this way.

[0035] A method for fabricating a coilless giant inductor includes:

[0036] S1: A SrRuO3 thin film bottom electrode layer is grown on the substrate using pulsed laser deposition.

[0037] S2: An inductive material layer is grown on the upper surface of the SrRuO3 thin film bottom electrode layer using pulsed laser deposition.

[0038] The operating conditions for pulsed laser deposition include: a vacuum level of 1 × 10⁻⁶ in the sample deposition chamber. -10 ~1×10 -5 Pa; deposition temperature 400–800℃; deposition oxygen pressure 50–300 mtorr; laser energy density 0.1–3 J·cm⁻¹ -2 The laser pulse frequency is 1–50 Hz.

[0039] S3: A top electrode is grown on the upper surface of the inductive material layer thin film using pulsed laser deposition, magnetron sputtering, or ion sputtering.

[0040] Example 1

[0041] like Figure 1 The diagram illustrates a coilless giant inductor. The structure of this device, from bottom to top, consists of a substrate, a bottom electrode layer, an inductor material layer, and a top electrode. In this embodiment, an inductor with a thickness of 1 mm and a size of 1 cm is selected. 2 (111)-oriented SrTiO3 was used as the substrate; a (111)-SrRuO3 thin film was deposited on the substrate as the bottom electrode layer by pulsed laser deposition, followed by the deposition of (111)-PbZr. 0.2 Ti 0.8 An O3 thin film is used as the inductor material layer; (111)-SrRuO3 is deposited as the top electrode, and the specific steps are as follows:

[0042] S1: A (111)-SrRuO3 bottom electrode layer was epitaxially grown on a (111)-SrTiO3 substrate using pulsed laser deposition; wherein, the operating conditions of the pulsed laser deposition method include: the sample deposition chamber is first continuously evacuated to 1×10 -7 Pa, deposition chamber temperature 690℃, deposition oxygen pressure 80 mtorr, laser energy density 1.06 J·cm⁻¹ -2 The deposition time was 10 min and the laser pulse frequency was 10 Hz.

[0043] S2: (111)-PbZr was grown on the upper surface of the (111)-SrRuO3 thin film bottom electrode in S1 using pulsed laser deposition. 0.2 Ti 0.8 O3 inductive material layer; wherein, the operating conditions of pulsed laser deposition method include: sample deposition chamber temperature of 600℃, deposition oxygen pressure of 200 mtorr, and laser energy density of 0.96 J·cm⁻¹. -2 The deposition time was 60 min, and the laser pulse frequency was 10 Hz; then it was cooled to room temperature at a cooling rate of 50 °C / min.

[0044] S3: Pulsed laser deposition method was used to deposit (111)-PbZr in S2. 0.2 Ti 0.8 A (111)-SrRuO3 top electrode (a circular electrode with a diameter of 50 μm) was grown on the upper surface of the O3 thin film; the operating conditions of the pulsed laser deposition method included: the sample deposition chamber was first continuously evacuated to 1×10⁻⁶. -7 Pa, deposition chamber temperature 690℃, deposition oxygen pressure 80 mtorr, laser energy density 1.06 J·cm⁻¹ -2 The deposition time was 5 min, and the laser pulse frequency was 10 Hz; then it was cooled to room temperature at a cooling rate of 50 °C / min to obtain (111)-PbZr. 0.2 Ti 0.8 O3-based giant inductor.

[0045] In this embodiment, (111)-PbZr 0.2 Ti 0.8 The thickness of the O3 inductive material layer is approximately 180 nm. The (111)-PbZr was analyzed using piezoelectric microscopy. 0.2 Ti 0.8 The domain structure of the O3 inductor material layer, as shown in the test results are as follows: Figure 2 As shown, from Figure 2 It is evident that the thin film possesses a single-stranded ferroelastic superdomain structure with regularly ordered nanodomains (a / c domains). More importantly, the polarization phase difference between the subdomains within the film is 90°, and the polarization direction at the subdomain boundaries is unlikely to change abruptly under a specific electric field. This results in the presence of a single-stranded ferroelastic superdomain structure at the subdomain boundaries. Figure 3 The polarization vector splitting is shown (e.g., at the center of four subdomains, three split polarization vectors form a special closed-loop "vortex"). It is evident that the thin film contains... Figure 3 The top left corner shows a dynamic polarization vortex that can be induced by an external field (not all ferroelastic superdomain structures have dynamic polarization vortices; they only form under special stress / electric boundary conditions).

[0046] Because dynamically polarized vortices are transient vortices induced by an external electric field, direct observation using electron microscopy techniques such as transmission electron microscopy is quite difficult. Therefore, in this embodiment, a phase-field analysis model of the thin film is first established using a phase-field simulation method, such as... Figure 4 As shown in (a), it can be seen that in (111)-PbZr 0.2 Ti 0.8 At the domain wall boundaries in the O3 inductor material layer, there is significant polarization vector splitting, and when an external electric field or force load is applied, it induces polarization vector splitting. Figure 4 (b) shows a polarized vortex with a size of 0.1–20 nm. Figure 4 (b) is Figure 4 (a) is a partially enlarged schematic diagram.

[0047] Experimental results and phase-field analysis show that when these dynamically polarized vortices are excited by external electric signals, they will undergo induced, quenched, rotating, and quasi-rotating motions. This causes changes in the charge distribution on or inside the inductor material layer, which can be approximated as "dynamic vortex currents" in the plane. This will induce a magnetic field component parallel to the direction of the external electric field, thereby causing the inductor material to exhibit inductive properties.

[0048] In this embodiment, the prepared (111)-PbZr was analyzed using a Keysight 4980A LCR analyzer. 0.2 Ti 0.8The inductive performance of the O3 giant inductor was characterized, and the experimental results are as follows: Figure 5 As shown. From Figure 5 As can be seen from this, the inductance density of the giant inductor provided in this embodiment can reach 800 mH / cm². 2 Furthermore, its inductance does not decrease with increasing operating current, exhibiting excellent inductance performance. Compared to traditional coil-structure inductors, the giant inductor provided in this embodiment has an inductance density that is 10 times higher. 3 The volume has been reduced by 10 times. 6 (based on a commercially available inductance value of 1μH and a size of 10mm²) 3 (Taking a color-coded inductor as an example). It is evident that the beneficial effects of this invention are significant.

[0049] Example 2

[0050] like Figure 1 The diagram illustrates a coilless giant inductor. The device's structure, from bottom to top, consists of a substrate, a bottom electrode layer, an inductor material layer, and a top electrode. In this embodiment, an inductor with a thickness of 1 mm and a size of 0.5 cm is selected. 2 (111)-oriented SrTiO3 was used as the substrate; a (111)-SrRuO3 thin film was deposited on the substrate as the bottom electrode layer by pulsed laser deposition, followed by the deposition of (111)-PbZr. 0.2 Ti 0.8 An O3 thin film is used as the inductor material layer; sputtered Pt is used as the top electrode. The specific steps are as follows:

[0051] S1: A (111)-SrRuO3 bottom electrode layer was epitaxially grown on a (111)-SrTiO3 substrate using pulsed laser deposition; wherein, the operating conditions of the pulsed laser deposition method include: the sample deposition chamber is first continuously evacuated to 1×10 -7 Pa, deposition chamber temperature 690℃, deposition oxygen pressure 80 mtorr, laser energy density 1.06 J·cm⁻¹ -2 The deposition time was 5 minutes and the laser pulse frequency was 10 Hz.

[0052] S2: (111)-PbZr was grown on the upper surface of the (111)-SrRuO3 thin film bottom electrode in S1 using pulsed laser deposition. 0.2 Ti 0.8 O3 inductive material layer; wherein, the operating conditions of pulsed laser deposition method include: sample deposition chamber temperature of 600℃, deposition oxygen pressure of 200 mtorr, and laser energy density of 0.96 J·cm⁻¹. -2 The deposition time was 40 min and the laser pulse frequency was 10 Hz; then it was cooled to room temperature at a cooling rate of 50 °C / min.

[0053] S3: (111)-PbZr in S2 was obtained by ion sputtering. 0.2 Ti 0.8 A circular Pt electrode with a diameter of 50 μm was fabricated on the upper surface of an O3 thin film.

[0054] According to the test method of Example 1, the results show that the effect of Example 2 is roughly the same as that of Example 1.

[0055] Example 3

[0056] like Figure 1 The diagram illustrates a coilless giant inductor. The device's structure, from bottom to top, consists of a substrate, a bottom electrode layer, an inductor material layer, and a top electrode. In this embodiment, an inductor with a thickness of 1 mm and a size of 0.5 cm is selected. 2 (111)-oriented SrTiO3 was used as the substrate; a (111)-SrRuO3 thin film was deposited on the substrate as the bottom electrode layer by pulsed laser deposition, followed by the deposition of (111)-PbZr. 0.1 Ti 0.9 An O3 thin film is used as the inductor material layer; sputtered Pt is used as the top electrode. The specific steps are as follows:

[0057] S1: A (111)-SrRuO3 bottom electrode layer was epitaxially grown on a (111)-SrTiO3 substrate using pulsed laser deposition; wherein, the operating conditions of the pulsed laser deposition method include: the sample deposition chamber is first continuously evacuated to 1×10 -7 Pa, deposition chamber temperature 690℃, deposition oxygen pressure 80 mtorr, laser energy density 1.06 J·cm⁻¹ -2 The deposition time was 5 minutes and the laser pulse frequency was 10 Hz.

[0058] S2: (111)-PbZr was grown on the upper surface of the (111)-SrRuO3 thin film bottom electrode in S1 using pulsed laser deposition. 0.1 Ti 0.9 O3 inductive material layer; wherein, the operating conditions of pulsed laser deposition method include: sample deposition chamber temperature of 650℃, deposition oxygen pressure of 200 mtorr, and laser energy density of 0.4 J·cm⁻¹. -2 The deposition time was 90 min, and the laser pulse frequency was 10 Hz; then it was cooled to room temperature at a cooling rate of 80 °C / min.

[0059] S3: (111)-PbZr in S2 was obtained by ion sputtering. 0.1 Ti 0.9 A circular Pt electrode with a diameter of 50 μm was fabricated on the upper surface of an O3 thin film.

[0060] According to the test method of Example 1, the results show that the effect of Example 3 is roughly similar to that of Example 1.

[0061] Example 4

[0062] like Figure 1 The diagram illustrates a coilless giant inductor. The device's structure, from bottom to top, consists of a substrate, a bottom electrode layer, an inductor material layer, and a top electrode. In this embodiment, an inductor with a thickness of 1 mm and a size of 0.5 cm is selected. 2 (111)-oriented DyScO3 was used as the substrate; (111)-SrRuO3 thin film was deposited on the substrate as the bottom electrode layer by pulsed laser deposition, and BiFeO3 thin film was deposited as the inductor material layer; Au was sputtered as the top electrode. The specific steps are as follows:

[0063] S1: A (111)-SrRuO3 bottom electrode layer was epitaxially grown on a (111)-DyScO3 substrate using pulsed laser deposition; wherein, the operating conditions of the pulsed laser deposition method include: the sample deposition chamber is first continuously evacuated to 1×10 -7 Pa, deposition chamber temperature 690℃, deposition oxygen pressure 80 mtorr, laser energy density 1.06 J·cm⁻¹ -2 The deposition time was 5 minutes and the laser pulse frequency was 10 Hz.

[0064] S2: A BiFeO3 inductive material layer was grown on the upper surface of the (111)-SrRuO3 thin film bottom electrode in S1 using pulsed laser deposition. The operating conditions for pulsed laser deposition included: a sample deposition chamber temperature of 600℃, a deposition oxygen pressure of 200 mtorr, and a laser energy density of 0.3 J·cm⁻¹. -2 The deposition time was 90 min, and the laser pulse frequency was 10 Hz; then it was cooled to room temperature at a cooling rate of 50 °C / min.

[0065] S3: A circular Au electrode with a diameter of 50 μm was prepared on the upper surface of the BiFeO3 thin film in S2 by ion sputtering.

[0066] Following the testing method of Example 1, the results show that the effect of Example 4 is roughly similar to that of Example 1.

[0067] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0068] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A dynamically polarized vortex giant inductor with a coilless structure, characterized in that, The structure of the giant inductor, from bottom to top, consists of a substrate layer, a bottom electrode layer, an inductor material layer, and a top electrode. The inductor material layer is a ferroelectric thin film with dynamic polarization vortices; The inductor material layer is made of PbZr. 0.2 Ti 0.8 O3; The ferroelectric thin film has a single strip-shaped ferroelastic superdomain structure with orderly arranged nanodomains. The polarization phase difference between the subdomains inside the film is 90°, and the polarization direction at the subdomain boundary is difficult to change abruptly under the action of an external electric field. This results in polarization vector splitting at the subdomain boundary. The film contains dynamic polarization vortices that can be induced by an external field. When subjected to an external field, polarized vortices are induced within the domains or at the domain boundaries of the inductive material. When excited by an external electrical signal, the polarized vortices will move and induce a magnetic field component parallel to the direction of the external electric field, thereby causing the material to exhibit inductive properties. The motion forms of the dynamic polarized vortices under the action of an external field include one or more of the following: induction, quenching, rotation, quasi-rotation, expansion, merging, shrinking, and cancellation. The size of the dynamic polarized vortex is 0.1–400 nm.

2. The dynamically polarized vortex giant inductor with a coilless structure according to claim 1, characterized in that, The substrate is made of one or more of SrTiO3, NdGaO3, TbScO3, GdScO3, DyScO3, SmScO3, and NdScO3; the thickness of the substrate is 1 nm to 10 mm.

3. The dynamically polarized vortex giant inductor with a coilless structure according to claim 1, characterized in that, The bottom electrode layer is made of SrRuO3; the thickness of the bottom electrode layer is 1-200 nm.

4. A dynamically polarized vortex giant inductor with a coilless structure according to claim 1, characterized in that, The inductor material layer is made of PbZr. 0.1 Ti 0.9 One or more of O3, PbTiO3, BiFeO3, and BaTiO3; the thickness of the inductive material layer is 1 to 1000 nm.

5. A dynamically polarized vortex giant inductor with a coilless structure according to claim 1, characterized in that, The top electrode is made of one or more of Au, Ag, Pt, TiNx, and SrRuO3; the area of ​​the top electrode is 1×10⁻⁶. -8 ~1×10 -2 cm 2 The thickness of the top electrode is 1–1000 nm.

6. A method for fabricating a coilless dynamically polarized vortex giant inductor according to any one of claims 1-5, characterized in that, Includes the following steps: Step 1: Grow a SrRuO3 bottom electrode layer on the substrate using pulsed laser deposition; Step 2: An inductive material layer is grown on the upper surface of the SrRuO3 bottom electrode layer using pulsed laser deposition. Step 3: Grow a top electrode layer on the upper surface of the inductor material layer using pulsed laser deposition, magnetron sputtering, or ion sputtering.

7. The preparation method according to claim 6, characterized in that, The operating conditions for pulsed laser deposition in step 2 include: a vacuum level of 1×10⁻⁶ in the sample deposition chamber. -10 ~1×10 -5 Pa; deposition temperature: 400–800℃; deposition oxygen pressure: 50–300 mtorr; laser energy density: 0.1–3 J·cm⁻¹ -2 The laser pulse frequency is 1–50 Hz.

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