Stacked low pass filter

Abstract

The low-pass filter of the present invention includes: first to third inductors and a capacitor. The first inductor conductor layer constituting at least a portion of each of the first and second inductors and the second inductor conductor layer including the first and second portions constituting the third inductor are connected by a plurality of first through holes. The first portion and the capacitor conductor layer constituting a portion of the capacitor are connected by a plurality of second through holes. The second portion and the capacitor conductor layer are connected by a plurality of third through holes.

Description

Technical Field

[0001] The present invention relates to a stacked low-pass filter in which an inductor and a capacitor are integrated on a stacked body. Background Art

[0002] In recent years, the market has put forward the demand for miniaturization and space saving of small mobile communication devices, and also put forward the demand for miniaturization of low-pass filters used in such communication devices. As a known low-pass filter suitable for miniaturization, a laminated body including a plurality of dielectric layers and a plurality of conductor layers is used.

[0003] Japanese Patent Application Publication No. 2008-187418 discloses a stacked low-pass filter. The stacked low-pass filter has: two inductors connected in series; a capacitor provided between the connection point of the two inductors and the ground; and a conductor layer forming the capacitor with the connection point of the two inductors is connected through a through hole.

[0004] As a characteristic of a low-pass filter, it is required that the insertion loss in the passband is sufficiently small and the reflection loss is sufficiently large, and the insertion loss in the stopband is sufficiently large. In the stacked low-pass filter disclosed in Japanese Patent Application Publication No. 2008-187418, for example, the magnitude of the insertion loss in the stopband can be adjusted by adjusting the inductance of the path connecting the connection point of two inductors and the capacitor. The path is composed of a through hole.

[0005] In recent years, a system using a signal with a higher frequency than before has been adopted in a small mobile communication device. As described above, if a signal with a higher frequency than before is used, it is required that the low-pass filter meet more stringent characteristics than before. For example, in a stop band higher than before, the insertion loss is required to be sufficiently large. However, the stacked low-pass filter disclosed in Japanese Patent Application Publication No. 2008-187418 has the following problem: the inductance of the path connecting the connection point of the two inductors and the capacitor cannot be fully adjusted, and as a result, the size of the insertion loss in the stop band cannot be fully adjusted. Summary of the invention

[0006] An object of the present invention is to provide a stacked low-pass filter capable of sufficiently adjusting the magnitude of insertion loss in a stop band.

[0007] The stacked low-pass filter of the present invention comprises: a first inductor and a second inductor connected in series; a third inductor provided between a connection point of the first inductor and the second inductor and ground in a circuit structure; a capacitor connected to the third inductor; and a stacked body including a plurality of stacked dielectric layers and a plurality of conductor layers for integrating the first inductor, the second inductor, the third inductor and the capacitor. The third inductor comprises: a first inductor portion and a second inductor portion connected in parallel.

[0008] The plurality of conductor layers include: a first inductor conductor layer, a second inductor conductor layer, and a capacitor conductor layer, which are arranged at different positions in the stacking direction of the plurality of dielectric layers. The first inductor conductor layer constitutes at least a portion of the first inductor and the second inductor. The second inductor conductor layer includes: a first portion constituting a first inductor portion, and a second portion constituting a second inductor portion. The capacitor conductor layer constitutes a portion of a capacitor,

[0009] The laminate further includes: at least one first through hole connecting the first inductor conductor layer and the second inductor conductor layer; at least one second through hole connecting the first portion of the second inductor conductor layer and the capacitor conductor layer; and at least one third through hole connecting the second portion of the second inductor conductor layer and the capacitor conductor layer.

[0010] In the multilayer low-pass filter of the present invention, the third inductor may further include a third inductor portion provided between the connection point and the first inductor portion and the second inductor portion in terms of circuit structure. The third inductor portion may also be formed of at least one first through hole.

[0011] In the multilayer low-pass filter of the present invention, the at least one first through-hole may be a plurality of first through-holes connected in series.

[0012] In the stacked low-pass filter of the present invention, the second inductor conductor layer may have a rotationally symmetrical shape centered on a connection portion between the second inductor conductor layer and at least one first through hole when viewed from one direction parallel to the stacking direction. In this case, the at least one second through hole and the at least one third through hole may be arranged at symmetrical positions centered on the connection portion when viewed from one direction parallel to the stacking direction.

[0013] In the stacked low-pass filter of the present invention, the second inductor conductor layer may have an axisymmetric shape centered on a symmetry axis that passes through a connection portion between the second inductor conductor layer and the at least one first through hole and is orthogonal to the stacking direction, as viewed from one direction parallel to the stacking direction. In this case, the at least one second through hole and the at least one third through hole may be arranged at symmetrical positions centered on the connection portion, as viewed from one direction parallel to the stacking direction.

[0014] In the stacked low-pass filter of the present invention, the first inductor conductor layer may have a rotationally symmetrical shape centered on a connection portion between the first inductor conductor layer and at least one first through hole when viewed from a direction parallel to the stacking direction. Alternatively, the first inductor conductor layer may have an axisymmetric shape centered on a symmetry axis that passes through a connection portion between the first inductor conductor layer and at least one first through hole and is orthogonal to the stacking direction when viewed from a direction parallel to the stacking direction.

[0015] In the stacked low-pass filter of the present invention, each of the plurality of conductor layers may also have a shape consistent with itself or a shape consistent with other conductor layers when rotating around a central axis intersecting at least one first through hole and parallel to the stacking direction. In this case, the stacked body may also include at least one first through hole, at least one second through hole, and at least one third through hole. Viewed from a direction parallel to the stacking direction, the plurality of through holes are respectively arranged at positions consistent with themselves or positions consistent with other through holes when rotating around the central axis.

[0016] In the stacked low-pass filter of the present invention, the plurality of conductor layers include: a first conductor layer for inductors, a second conductor layer for inductors, and a conductor layer for capacitors arranged at different positions in the stacking direction of the plurality of dielectric layers. The first conductor layer for inductors constitutes at least a portion of each of the first inductors and the second inductors. The second conductor layer for inductors includes: a first portion constituting a first inductor portion, and a second portion constituting a second inductor portion. The conductor layer for capacitors constitutes a portion of a capacitor. The laminate includes: at least one first through hole connecting the first conductor layer for inductors and the second conductor layer for inductors; at least one second through hole connecting the first portion of the second conductor layer for inductors and the conductor layer for capacitors; and at least one third through hole connecting the second portion of the second conductor layer for inductors and the conductor layer for capacitors. Thus, according to the present invention, the size of the insertion loss in the stop band can be fully adjusted.

[0017] Other objects, features and advantages of the present invention will become more apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a circuit diagram showing a circuit configuration of a multilayer low-pass filter according to a first embodiment of the present invention.

[0019] Figure 2 It is a perspective view showing the appearance of a multilayer low-pass filter according to the first embodiment of the present invention.

[0020] FIG. 3A to FIG. 3C It is an explanatory diagram showing the pattern formation surface of the first to third dielectric layers in the laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0021] FIG. 4A to FIG. 4C It is an explanatory diagram showing the pattern formation surface of the fourth to eighth dielectric layers in the laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0022] FIG. 5A to FIG. 5C It is an explanatory diagram showing the pattern formation surface of the ninth to thirteenth dielectric layers in the laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0023] FIG. 6A to FIG. 6C It is an explanatory diagram showing the pattern formation surface of the 14th to 16th dielectric layers in the laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0024] Fig. 7A and Figure 7B It is an explanatory diagram showing the pattern formation surfaces of the seventeenth and eighteenth dielectric layers in the laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0025] Figure 8 It is a perspective view showing the interior of a laminated body of the laminated low-pass filter according to the first embodiment of the present invention.

[0026] Fig. 9 Yes means Figure 8 A perspective view of a portion of the interior of the stack is shown.

[0027] Fig.10 It is a perspective view showing a part of the interior of a laminated body of a laminated low-pass filter according to a first comparative example.

[0028] Fig.11 It is a perspective view showing a part of the interior of a laminated body of a laminated low-pass filter according to a second comparative example.

[0029] Fig.12 It is a perspective view showing a part of the interior of a laminated body of a laminated low-pass filter according to a third comparative example.

[0030] Fig.13 It is an explanatory diagram showing the second inductor conductor layer of the first modification.

[0031] Fig.14 It is an explanatory diagram showing the first inductor conductor layer according to the second modification.

[0032] FIG. 15A to FIG. 15C It is an explanatory diagram showing the pattern formation surface of the first to third dielectric layers in the laminated body of the laminated low-pass filter according to the second embodiment of the present invention.

[0033] FIG. 16A to FIG. 16CIt is an explanatory diagram showing the pattern formation surface of the fourth to eleventh dielectric layers in the laminated body of the laminated low-pass filter according to the second embodiment of the present invention.

[0034] FIG. 17A to FIG. 17C It is an explanatory diagram showing the pattern formation surface of the 12th to 14th dielectric layers in the laminated body of the laminated low-pass filter according to the second embodiment of the present invention.

[0035] 18A to 18C It is an explanatory diagram showing the pattern formation surface of the 15th to 17th dielectric layers in the laminated body of the laminated low-pass filter according to the second embodiment of the present invention.

[0036] Fig.19 It is a perspective view showing the inside of a stacked layer of a stacked low-pass filter according to a second embodiment of the present invention.

[0037] Fig. 20 Yes means Fig.19 A perspective view of a portion of the interior of the stack is shown.

[0038] Fig.21 It is a characteristic diagram showing each of the pass attenuation characteristics in the first and second models.

[0039] Fig. 22 It is a characteristic diagram showing each insertion loss of the first and second models.

[0040] Fig.23 It is a characteristic diagram showing the return loss of each first input and output port in the first and second models.

[0041] Fig.24 It is a characteristic diagram showing the return loss of each second input / output port in the first and second models. DETAILED DESCRIPTION

[0042] [First embodiment]

[0043] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1 , the schematic structure of the stacked low-pass filter (hereinafter referred to as low-pass filter) 1 involved in the first embodiment of the present invention is described. The low-pass filter 1 at least includes a first inductor L1, a second inductor L2, a third inductor L3 and a capacitor. The first and second inductors L1 and L2 are connected in series. The third inductor L3 is arranged between the connection point P1 of the first inductor L1 and the second inductor L2 and the ground in the circuit structure. The capacitor is connected to the third inductor. In addition, the expression "in the circuit structure" used in this application does not refer to the configuration in the physical structure, but refers to the configuration on the circuit diagram.

[0044] The third inductor L3 includes a first inductor portion L31 and a second inductor portion L32 connected in parallel, and a third inductor portion L33. In terms of circuit structure, the third inductor portion L33 is provided between a connection point P1 between the first inductor L1 and the second inductor L2 and the first and second inductor portions L31 and L32. The third inductor portion L33 is connected in series with the first inductor portion L31 and the second inductor portion L32, respectively.

[0045] Next, refer to Figure 1 , an example structure of a portion other than the first to third inductors L1 to L3 of the low-pass filter 1 will be described.

[0046] The low pass filter 1 includes capacitors C1, C2, and C3 as the above-mentioned capacitors. The low pass filter 1 also includes a first input / output port 2, a second input / output port 3, inductors L4, L5, L6, L7, L8, and L9, and capacitors C4, C5, and C6.

[0047] One end of the inductor L4 is connected to the first input / output port 2. One end of the first inductor L1 is connected to the other end of the inductor L4. One end of the second inductor L2 is connected to the other end of the first inductor L1. One end of the inductor L5 is connected to the other end of the second inductor L2. The other end of the inductor L5 is connected to the second input / output port 3. The first and second inductors L1 and L2 are provided in series in a path connecting the first input / output port 2 and the second input / output port 3.

[0048] One end of the third inductor portion L33 of the third inductor L3 is connected to the connection point P1 of the first inductor L1 and the second inductor L2. One ends of the first and second inductor portions L31 and L32 of the third inductor L3 are connected to the other end of the third inductor portion L33. The other ends of the first and second inductor portions L31 and L32 are connected to each other.

[0049] One end of each of the capacitors C1 to C3 is connected to a connection point P2 between the other end of the first inductor portion L31 and the other end of the second inductor portion L32. The other end of the capacitor C2 and one end of the capacitor C4 are connected to a connection point between the first inductor L1 and the inductor L4. The other end of the capacitor C3 and one end of the capacitor C5 are connected to a connection point between the second inductor L2 and the inductor L5. The other ends of the capacitors C1, C4, and C5 are connected to each other.

[0050] One end of each of the inductors L6 to L9 and the capacitor C6 is connected to a connection point P3 of the other end of the capacitor C1, the other end of the capacitor C4, and the other end of the capacitor C5. The other end of each of the inductors L6 to L9 and the capacitor C6 is connected to the ground.

[0051] Next, refer to Figure 2 , other structures of the low-pass filter 1 are described. Figure 2 It is a perspective view showing the appearance of the low-pass filter 1 .

[0052] The low-pass filter 1 further includes a laminate 50 including a plurality of laminated dielectric layers, a plurality of conductor layers, and a plurality of through holes. The laminate 50 is used to integrate the first input / output port 2, the second input / output port 3, the first to third inductors L1 to L3, the inductors L4 to L9, and the capacitors C1 to C6. The first to third inductors L1 to L3, the inductors L4 to L9, and the capacitors C1 to C6 are formed using a plurality of conductor layers.

[0053] The stacked body 50 has a bottom surface 50A and a top surface 50B located at both ends of the stacking direction T of the plurality of dielectric layers, and four side surfaces 50C to 50F connecting the bottom surface 50A and the top surface 50B. The side surfaces 50C and 50D face opposite sides, and the side surfaces 50E and 50F also face opposite sides. The side surfaces 50C to 50F are perpendicular to the top surface 50B and the bottom surface 50A.

[0054] Here, if Figure 2 The X direction, Y direction, and Z direction are defined as shown. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, a direction parallel to the stacking direction T is referred to as the Z direction. In addition, the direction opposite to the X direction is referred to as the -X direction, the direction opposite to the Y direction is referred to as the -Y direction, and the direction opposite to the Z direction is referred to as the -Z direction.

[0055] like Figure 2 As shown, the bottom surface 50A is located at the end of the stack 50 in the -Z direction. The top surface 50B is located at the end of the stack 50 in the Z direction. Each of the bottom surface 50A and the top surface 50B is a rectangular shape that is long in the X direction. The side surface 50C is located at the end of the stack 50 in the -X direction. The side surface 50D is located at the end of the stack 50 in the X direction. The side surface 50E is located at the end of the stack 50 in the -Y direction. The side surface 50F is located at the end of the stack 50 in the Y direction.

[0056] The low-pass filter 1 further includes terminals 111, 112, 113, 114, 115, and 116. Each terminal 111 to 113 is arranged at a position from the top 50B via the side 50E to the bottom 50A. In addition, the terminals 111 to 113 are arranged in this order in the X direction. Each terminal 114 to 116 is arranged at a position from the top 50B via the side 50F to the bottom 50A. In addition, the terminals 114 to 116 are arranged in this order in the X direction.

[0057] The terminal 112 corresponds to the first input / output port 2, and the terminal 115 corresponds to the second input / output port 3. Each of the terminals 111, 113, 114, and 116 is connected to the ground.

[0058] Next, refer to Figure 3A to Figure 7B , an example of a plurality of dielectric layers and a plurality of conductor layers constituting the laminate 50 is described. In this example, the laminate 50 has 18 laminated dielectric layers. Hereinafter, the 18 dielectric layers are sequentially referred to as the 1st to 18th dielectric layers from bottom to top. In addition, reference numerals 51 to 68 represent the 1st to 18th dielectric layers.

[0059] Figure 3A The pattern formation surface of the first dielectric layer 51 is shown. No conductive layer or through-hole is formed on the dielectric layer 51.

[0060] Figure 3B The patterned surface of the second dielectric layer 52 is shown. A capacitor conductor layer 521 is formed on the patterned surface of the dielectric layer 52. In addition, through holes 52T1, 52T2, 52T3, and 52T4 are formed in the dielectric layer 52. The through holes 52T1 to 52T4 are connected to the conductor layer 521.

[0061] Figure 3C : shows the patterned surface of the third dielectric layer 53. A capacitor conductor layer 531 is formed on the patterned surface of the dielectric layer 53. In addition, through holes 53T1, 53T2, 53T3, 53T4, 53T6, and 53T7 are formed in the dielectric layer 53. Through holes 52T1 to 52T4 formed in the dielectric layer 52 are connected to the through holes 53T1 to 53T4, respectively. Through holes 53T6 and 53T7 are connected to the conductor layer 531.

[0062] Figure 4A 2 shows the patterned surface of the fourth dielectric layer 54. The capacitor conductor layers 541 and 542 are formed on the patterned surface of the dielectric layer 54. The conductor layer 541 and the terminal 112 (see FIG. Figure 2 ) is connected. The conductor layer 542 is connected to the terminal 115 (refer to Figure 2 ) are connected. In addition, through holes 54T1, 54T2, 54T3, 54T4, 54T6, and 54T7 are formed in the dielectric layer 54. Through holes 53T1 to 53T4, 53T6, and 53T7 formed in the dielectric layer 53 are connected to the through holes 54T1 to 54T4, 54T6, and 54T7, respectively.

[0063] Figure 4B: represents the pattern forming surface of the fifth dielectric layer 55. A second inductor conductor layer 551 is formed on the pattern forming surface of the dielectric layer 55. The second inductor conductor layer 551 includes a first portion 551a and a second portion 551b. The first portion 551a and the second portion 551b have a first end and a second end located on opposite sides of each other. The first end of the first portion 551a and the first end of the second portion 551b are connected to each other. Figure 4B , the boundary between the first portion 551a and the second portion 551b is indicated by a dotted line. A through hole 54T6 formed in the dielectric layer 54 is connected to a portion near the second end of the first portion 551a. A through hole 54T7 formed in the dielectric layer 54 is connected to a portion near the second end of the second portion 551b.

[0064] In addition, through holes 55T1, 55T2, 55T3, 55T4, and 55T5 are formed in the dielectric layer 55. Through holes 54T1 to 54T4 formed in the dielectric layer 54 are connected to through holes 55T1 to 55T4, respectively. A through hole 55T5 is connected to the first portion 551a and the second portion 551b at and near the boundary between the first portion 551a and the second portion 551b.

[0065] Figure 4C The pattern forming surfaces of the 6th to 8th dielectric layers 56 to 58 are shown. Through holes 56T1, 56T2, 56T3, 56T4, and 56T5 are formed in each of the dielectric layers 56 to 58. The through holes 55T1 to 55T5 formed in the dielectric layer 55 are connected to the through holes 56T1 to 56T51 formed in the dielectric layer 56, respectively. In addition, in the dielectric layers 56 to 58, the through holes adjacent to each other and having the same reference numeral are connected to each other.

[0066] Figure 5A 1 shows the patterned surface of the ninth dielectric layer 59. Conductive layers 591, 592, 593, and 594 are formed on the patterned surface of the dielectric layer 59. The conductive layers 591, 592, 593, and 594 are connected to the terminals 111, 114, 113, and 116 (see FIG. Figure 2 ) are connected. The through holes 56T1 to 56T4 formed in the dielectric layer 58 are connected to the conductor layers 591 to 594, respectively. In addition, a through hole 59T5 is formed in the dielectric layer 59. The through hole 56T5 formed in the dielectric layer 58 is connected to the through hole 59T5.

[0067] Figure 5B The pattern forming surfaces of the 10th to 12th dielectric layers 60 to 62 are shown. A through hole 60T5 is formed in each of the dielectric layers 60 to 62. The through hole 59T5 formed in the dielectric layer 59 is connected to the through hole 60T5 of the dielectric layer 60. In addition, in the dielectric layers 60 to 62, the through holes 60T5 adjacent to each other are connected.

[0068] Figure 5C 13 shows the patterned surface of the dielectric layer 63. The inductor conductor layers 631 and 632 are formed on the patterned surface of the dielectric layer 63. The conductor layers 631 and 632 have first and second ends located on opposite sides of each other. The first end of the conductor layer 631 is connected to the terminal 112 (see FIG. Figure 2 ) is connected. The first end of the conductor layer 632 is connected to the terminal 115 (see Figure 2 ) are connected. In addition, through holes 63T1, 63T2, and 63T5 are formed in the dielectric layer 63. The through hole 63T1 is connected to the vicinity of the second end of the conductor layer 631. The through hole 63T2 is connected to the vicinity of the second end of the conductor layer 632. The through hole 60T5 formed in the dielectric layer 62 is connected to the through hole 63T5.

[0069] Fig. 6A 14 shows the patterned surface of the dielectric layer 64. The inductor conductor layers 641 and 642 are formed on the patterned surface of the dielectric layer 64. The conductor layers 641 and 642 have first and second ends located on opposite sides of each other. The first end of the conductor layer 641 is connected to the terminal 112 (see FIG. Figure 2 ) is connected. The first end of the conductor layer 642 is connected to the terminal 115 (see Figure 2 ) are connected. In addition, through holes 64T1, 64T2, and 64T5 are formed on the dielectric layer 64. The through hole 63T1 formed on the dielectric layer 63 and the through hole 64T1 are connected to the vicinity of the second end of the conductor layer 641. The through hole 63T2 formed on the dielectric layer 63 and the through hole 64T2 are connected to the vicinity of the second end of the conductor layer 642. The through hole 63T5 formed on the dielectric layer 63 is connected to the through hole 64T5.

[0070] Figure 6B The pattern formation surface of the fifteenth dielectric layer 65 is shown. Through holes 65T1, 65T2, and 65T5 are formed in the dielectric layer 65. The through holes 64T1, 64T2, and 64T5 formed in the dielectric layer 64 are connected to the through holes 65T1, 65T2, and 65T5, respectively.

[0071] Figure 6C The pattern forming surface of the dielectric layer 66 of the 16th layer is shown. A first inductor conductor layer 661 is formed on the pattern forming surface of the dielectric layer 66. The first inductor conductor layer 661 includes a first portion 661a and a second portion 661b. The first portion 661a and the second portion 661b have a first end and a second end located on opposite sides of each other. The first end of the first portion 661a and the first end of the second portion 661b are connected to each other. Figure 6C In FIG. 6 , a boundary between the first portion 661a and the second portion 661b is indicated by a dotted line.

[0072] In addition, through holes 66T1, 66T2, and 66T5 are formed in the dielectric layer 66. The through hole 65T1 and the through hole 66T1 formed in the dielectric layer 65 are connected to the vicinity of the second end of the first portion 661a. The through hole 65T2 and the through hole 66T2 formed in the dielectric layer 65 are connected to the vicinity of the second end of the second portion 661b. At the boundary between the first portion 661a and the second portion 661b and its vicinity, the through hole 65T5 and the through hole 66T5 formed in the dielectric layer 65 are connected to the first portion 661a and the second portion 661b.

[0073] Fig. 7A The pattern forming surface of the 17th layer dielectric layer 67 is shown. A first inductor conductor layer 671 is formed on the pattern forming surface of the dielectric layer 67. The first inductor conductor layer 671 includes a first portion 671a and a second portion 671b. The first portion 671a and the second portion 671b have a first end and a second end located on opposite sides of each other. The first end of the first portion 671a and the first end of the second portion 671b are connected to each other. Fig. 7A In FIG. 6 , a boundary between the first portion 671 a and the second portion 671 b is indicated by a dotted line.

[0074] The through hole 66T1 formed in the dielectric layer 66 is connected to the portion near the second end of the first portion 671a. The through hole 66T2 formed in the dielectric layer 66 is connected to the portion near the second end of the second portion 671b. At the boundary between the first portion 671a and the second portion 671b and its vicinity, the through hole 66T5 formed in the dielectric layer 66 is connected to the first portion 671a and the second portion 671b.

[0075] Figure 7B The pattern forming surface of the 18th dielectric layer 68 is shown. On the pattern forming surface of the dielectric layer 68, a mark 681 composed of a conductive layer is formed.

[0076] The patterned surface of the first dielectric layer 51 becomes the bottom surface 50A of the laminate 50, and the surface opposite to the patterned surface of the eighteenth dielectric layer 68 becomes the top surface 50B of the laminate 50. Figure 2 The laminated body 50 shown is formed by laminating the first to eighteenth dielectric layers 51 to 68 .

[0077] Figure 8 5 shows the interior of the laminate 50 formed by laminating the first to eighteenth dielectric layers 51 to 68. Figure 8 As shown, inside the stacked body 50, there are stacked FIG. 3A to FIG. 7B The multiple conductor layers and multiple through holes are shown. Figure 8 In the example, the mark 681 is omitted. Fig. 9Also stated Figure 8 A portion of the interior of the stacked body 50 shown. Specifically, Fig. 9 The first inductor conductor layer 661 , the second inductor conductor layer 551 , and the capacitor conductor layer 531 , and through holes connecting these conductor layers are shown.

[0078] Next, Figure 1 The components of the circuit of the low-pass filter 1 shown are Figure 3A to Figure 7B The corresponding relationship of the components inside the laminated body 50 shown in FIG. Figure 6C The first portion 661a of the first inductor conductor layer 661 shown in FIG. Fig. 7A The first inductor shown is formed by the first portion 671 a of the conductive layer 671 and the through holes 66T1 and 66T5 .

[0079] The second inductor L2 is composed of Figure 6C The second portion 661b of the first inductor conductor layer 661 is shown. Fig. 7A The first inductor shown is formed by the second portion 671 b of the conductive layer 671 and the through holes 66T2 and 66T5 .

[0080] The first inductor portion L31 of the third inductor L3 is composed of Figure 4B The second inductor portion L32 of the third inductor L3 is composed of the first portion 551a of the conductor layer 551 shown in FIG. Figure 4B The third inductor portion L33 of the third inductor L3 is composed of the second portion 551b of the conductor layer 551 shown in FIG. FIG. 4B to FIG. 6B The through holes shown are 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, and 65T5.

[0081] Inductor L4 is composed of Figure 5C and Fig. 6A The inductor shown is composed of conductor layers 631, 641 and via 63T1. Figure 5C and Fig. 6A The inductor shown is formed by the conductor layers 632 and 642 and the through hole 63T2.

[0082] Inductor L6 is composed of Figure 5A The conductor layer 591 is shown with FIG. 3B to FIG. 4C The inductor L7 is formed by through holes 52T1, 53T1, 54T1, 55T1, and 56T1. Figure 5A The conductor layer 592 and FIG. 3B to FIG. 4C The through holes 52T2, 53T2, 54T2, 55T2, and 56T2 shown are formed. The inductor L8 is composed of Figure 5A The conductor layer 593 and FIG. 3B to FIG. 4CThe through holes 52T3, 53T3, 54T3, 55T3, and 56T3 are shown. The inductor L9 is composed of Figure 5A The conductor layer 594 is shown with FIG. 3B to FIG. 4C The through holes 52T4, 53T4, 54T4, 55T4, and 56T4 are shown.

[0083] Capacitor C1 is composed of Figure 3B and 3C The capacitor shown is formed by conductor layers 521, 531 and a dielectric layer 52 between these conductor layers.

[0084] Capacitor C2 is composed of Figure 3C and Figure 4A The capacitor shown is formed by conductor layers 531, 541 and a dielectric layer 53 between these conductor layers. Capacitor C3 is composed of Figure 3C and Figure 4A The capacitor shown is formed by conductor layers 531, 542 and a dielectric layer 53 between these conductor layers.

[0085] Capacitor C4 is composed of Figure 3B and Figure 4A The capacitor shown is formed by conductor layers 521, 541 and dielectric layers 52, 53 between these conductor layers. Capacitor C5 is composed of Figure 3B and Figure 4A The capacitor shown is formed by conductor layers 521, 542 and dielectric layers 52, 53 between these conductor layers.

[0086] Capacitor C6 consists of Figure 3B and Figure 5A The capacitor shown is formed by a conductor layer 521 and conductor layers 591 to 594 and dielectric layers 52 to 58 between these conductor layers.

[0087] Next, refer to Figures 1 to 9 , the structural features of the low-pass filter 1 of this embodiment are described. The plurality of conductor layers of the laminate 50 include: a first inductor conductor layer 661, a second inductor conductor layer 551, and a capacitor conductor layer 531 arranged at different positions in the stacking direction T, the first inductor conductor layer 661. The first inductor conductor layer 661 constitutes at least a portion of each of the first inductor L1 and the second inductor L2. The second inductor conductor layer 551 includes: a first portion 551a constituting a portion of the first inductor portion L31, and a second portion 551b constituting a portion of the second inductor portion L32. The capacitor conductor layer 531 constitutes a portion of each of the capacitors C1 to C3.

[0088] The laminate 50 includes at least one first through hole connecting the first inductor conductor layer 661 and the second inductor conductor layer 551. In the present embodiment, the at least one first through hole is through holes 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, and 65T5 connected in series. Fig. 9 In the figure, reference numeral T5 indicates a through-hole array consisting of through-holes 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, and 65T5. The first inductor conductive layer 661 and the second inductor conductive layer 551 are connected via the through-hole array T5.

[0089] The laminate 50 further includes at least one second through hole connecting the first portion 551a of the second inductor conductor layer 551 and the capacitor conductor layer 531, and at least one third through hole connecting the second portion 551b of the second inductor conductor layer 551 and the capacitor conductor layer 531. In the present embodiment, the at least one second through hole is the through holes 53T6 and 54T6 connected in series, and the at least one third through hole is the through holes 53T7 and 54T7 connected in series. Fig. 9 In the figure, symbol T6 indicates a through hole array consisting of through holes 53T6 and 54T6, and symbol T7 indicates a through hole array consisting of through holes 53T7 and 54T7. The first portion 551a is connected to the capacitor conductor layer 531 through the through hole array T6, and the second portion 551b is connected to the capacitor conductor layer 531 through the through hole array T7.

[0090] exist Figure 4B , the circle with the mark 55T5 represents the through hole 55T5 and represents the connection portion between the second inductor conductor layer 551 and the through hole 55T5. When viewed from a direction parallel to the stacking direction T (for example, the Z direction), the second inductor conductor layer 551 has a rotationally symmetrical shape centered on the connection portion between the second inductor conductor layer 551 and the through hole 55T5. That is, when viewed from the Z direction, the second inductor conductor layer 551 has a shape that is consistent with itself when rotated 180° around the central axis passing through the above-mentioned connection portion and parallel to the stacking direction T. In addition, the first part 551a and the second part 551b have shapes that are consistent with each other when rotated 180° around the above-mentioned central axis as viewed from the Z direction.

[0091] The through hole 54T6 connected to the first portion 551a and the through hole 54T7 connected to the second portion 551b are arranged at symmetrical positions around the connection portion between the second inductor conductor layer 551 and the through hole 55T5 as viewed in the Z direction. Specifically, the through hole 54T6 and the through hole 54T7 are arranged at positions that coincide with each other when rotated 180 degrees around the central axis that passes through the connection portion and is parallel to the stacking direction T. In addition, the through hole 54T6 and the through hole 54T7 are arranged at symmetrical positions around a virtual plane that passes through the connection portion and is perpendicular to the pattern formation surface of the dielectric layer 55.

[0092] Also, through hole 53T6 connected to through hole 54T6 and through hole 53T7 connected to through hole 54T7 are arranged at symmetrical positions around the connecting portion as viewed in the Z direction, similarly to through holes 54T6 and 54T7. Therefore, through hole row T6 and through hole row T7 are arranged at symmetrical positions around the connecting portion.

[0093] exist Figure 6C In FIG. 6 , the circle with the symbol 66T5 represents the through hole 66T5 and represents the connection portion between the first inductor conductor layer 661 and the through hole 66T5. When viewed from a direction parallel to the stacking direction T (for example, the Z direction), Figure 6B The connection portion between the through hole 65T5 and the first inductor conductor layer 661 shown is consistent with the connection portion between the first inductor conductor layer 661 and the through hole 66T5 (circle with symbol 66T5). When viewed from the Z direction, the first inductor conductor layer 661 has a rotationally symmetrical shape centered on the connection portion between the through hole 65T5 and the first inductor conductor layer 661. That is, when viewed from the Z direction, the first inductor conductor layer 661 has a shape that is consistent with itself when rotated 180° around the central axis passing through the above-mentioned connection portion and parallel to the stacking direction T. In addition, when viewed from the Z direction, the first portion 661a and the second portion 661b have shapes that are consistent with each other when rotated 180° around the above-mentioned central axis.

[0094] The shape of the first inductor conductive layer 671 is the same as the shape of the first inductor conductive layer 661 . Therefore, the first inductor conductive layer 671 has the same rotationally symmetric shape as the first inductor conductive layer 661 .

[0095] exist Figure 8In FIG. 1 , the straight line with the symbol C represents the central axis that intersects at least one of the first through holes, that is, through holes 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, and 65T5 and is parallel to the stacking direction T. When viewed from the Z direction, the central axis C coincides with the center of gravity of each of the dielectric layers 51 to 68. Not limited to the first inductor conductor layers 661, 671 and the second inductor conductor layer 551, the plurality of conductor layers included in the laminate 50 also have a shape that is consistent with itself or a shape that is consistent with other conductor layers when rotated 180° around the central axis C as the center when viewed from the Z direction. In addition, the plurality of through holes included in the laminate 50 are arranged at positions that are consistent with themselves or positions that are consistent with other through holes when rotated 180° around the central axis C as the center when viewed from the Z direction.

[0096] like FIG. 3C to FIG. 4B As shown, the capacitor conductive layers 541 and 542 are interposed between the second inductor conductive layer 551 and the capacitor conductive layer 531. The second inductor conductive layer 551 partially overlaps with the capacitor conductive layers 541 and 542 when viewed from the Z direction.

[0097] Next, the operation and effect of the low-pass filter 1 of the present embodiment will be described. In the low-pass filter 1 of the present embodiment, the first inductor conductor layer 661 constituting at least a portion of the first and second inductors L1 and L2 and the second inductor conductor layer 551 including the first portion 551a constituting the first inductor portion L31 and the second portion 551b constituting the second inductor portion L32 are connected through through holes 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, 65T5 (through hole row T5). The first portion 551a and the capacitor conductor layer 531 constituting a portion of each capacitor C1 to C3 are connected through through holes 536 and 54T6 (through hole row T6). The second portion 551b and the capacitor conductor layer 531 are connected through through holes 53T7 and 54T7 (through hole row T7).

[0098] In this embodiment, the inductance of the third inductor L3 can be adjusted by adjusting the shape and length of the second inductor conductor layer 551. Therefore, according to this embodiment, the magnitude of the insertion loss in the stop band can be adjusted.

[0099] Next, the effect of the low-pass filter 1 of the present embodiment will be described while comparing it with the low-pass filters of the first to third comparative examples. First, the low-pass filter of the first comparative example will be described. The circuit structure of the low-pass filter of the first comparative example is basically the same as the circuit structure of the low-pass filter 1 of the present embodiment. However, in the low-pass filter of the first comparative example, the third inductor L3 does not include two inductor parts connected in parallel.

[0100] Fig.10 1 is a perspective view showing a part of the inside of the laminated body of the low-pass filter of the first comparative example. In the laminated body of the low-pass filter of the first comparative example, a through-hole array T15 connecting the first inductor conductor layer 661 and the capacitor conductor layer 531 is provided, replacing the second inductor conductor layer 551, through-hole array T5 (through-holes 55T5, 56T5, 59T5, 60T5, 63T5, 64T5, 65T5), through-hole array T6 (through-holes 536, 54T6) and through-hole array T7 (through-holes 53T7, 54T7) of the present embodiment. The through-hole array T15 is composed of a plurality of through-holes connected in series.

[0101] In the low-pass filter of the first comparative example, the inductance of the third inductor L3 depends on the shape of the through-hole array T15. Due to the size limitation of the laminate or the arrangement limitation of the first inductor conductor layer 661, the shape of the through-hole array T15 cannot be sufficiently adjusted compared with the shape of the conductor layer. Therefore, in the first comparative example, the inductance of the third inductor L3 cannot be sufficiently adjusted. In contrast, according to the present embodiment, the inductance of the third inductor L3 can be sufficiently adjusted using the second inductor conductor layer 551.

[0102] Next, the low-pass filter of the second comparative example is described. The circuit structure of the low-pass filter of the second comparative example is the same as the circuit structure of the low-pass filter of the first comparative example. Fig.11 1 is a perspective view showing a part of the inside of the laminated body of the low-pass filter of the second comparative example. In the laminated body of the low-pass filter of the second comparative example, a second inductor conductor layer 552 formed on the pattern forming surface of the dielectric layer 55 is provided to replace the second inductor conductor layer 551 and the through hole array T7 (through holes 53T7, 54T7) in this embodiment. The first inductor conductor layer 661 and the second inductor conductor layer 552 are connected through the through hole array T5. The second inductor conductor layer 552 and the capacitor conductor layer 531 are connected through the through hole array T6.

[0103] In the low-pass filter of the second comparative example, the inductance of the third inductor L3 can be adjusted according to the shape and length of the second inductor conductor layer 552. However, in the second comparative example, the third inductor L3 and the capacitor conductor layer 531 are connected by a through-hole column T6. The through-hole column T6 is connected to a position away from the center of gravity of the capacitor conductor layer 531 and near the position where the capacitor C2 is formed. If the inductance of the third inductor L3 is adjusted using the second inductor conductor layer 552, the capacitance deviation of the capacitor C2 formed at a position close to the through-hole column T6 will be different from the capacitance deviation of the capacitor C3 formed at a position away from the through-hole column T6, resulting in that the characteristics of the low-pass filter deviate from the expected characteristics. Therefore, in the second comparative example, it is difficult to adjust the characteristics of the low-pass filter.

[0104] In contrast, in the present embodiment, the second inductor conductor layer 551 and the capacitor conductor layer 531 are connected via two through-hole columns T6 and T7. In particular, in the present embodiment, the second inductor conductor layer 551 has a symmetrical shape as described above, and the two through-hole columns T6 and T7 are arranged at symmetrical positions as described above. Thus, according to the present embodiment, when the inductance of the third inductor L3 is adjusted using the second inductor conductor layer 551, the difference in capacitance deviation between the capacitor C2 formed at a position close to the through-hole column T6 and the capacitor C3 formed at a position close to the through-hole column T7 can be suppressed.

[0105] As described above, the first portion 661a of the first inductor conductor layer 661 constitutes a portion of the first inductor L1, and the second portion 671b of the first inductor conductor layer 671 constitutes a portion of the second inductor L2. In the present embodiment, the first portion 551a of the second inductor conductor layer 551 constitutes the first inductor portion L31, and the second portion 551b of the second inductor conductor layer 551 constitutes the second inductor portion L32. In the second comparative example, the second inductor conductor layer 552 constitutes a portion of the third inductor L3.

[0106] like Fig.11 As shown, in the second comparative example, the second inductor conductor layer 552 is arranged at a position biased toward the first portion 661a. Therefore, in the second comparative example, the magnitude of the magnetic coupling between the first and third inductors L1 and L3 is different from the magnitude of the magnetic coupling between the second and third inductors L2 and L3. In addition, if the inductance of the third inductor L3 is adjusted using the second inductor conductor layer 552, the deviation of the magnitude of the magnetic coupling between the first and third inductors L1 and L3 is different from the deviation of the magnitude of the magnetic coupling between the second and third inductors L2 and L3. It can be seen from this that in the second comparative example, it is difficult to adjust the characteristics of the low-pass filter.

[0107] In contrast, in the present embodiment, the first portion 551a is disposed on the first portion 661a side, and the second portion 551b is disposed on the second portion 661b side, and the second inductor conductor layer 551 is not disposed biased toward one of the first portion 661a and the second portion 661b. Therefore, according to the present embodiment, the characteristics of the low-pass filter 1 can be easily adjusted compared to the second comparative example.

[0108] Next, the low-pass filter of the third comparative example is described. The circuit structure of the low-pass filter of the third comparative example is the same as the circuit structure of the low-pass filter of the first comparative example. Fig.121 is a perspective view showing a part of the inside of the laminated body of the low-pass filter of the third comparative example. In the laminated body of the low-pass filter of the third comparative example, the second inductor conductor layer 543 formed on the pattern forming surface of the dielectric layer 54, the second inductor conductor layer 553 formed on the pattern forming surface of the dielectric layer 55, the through hole 53T8 formed on the dielectric layer 53, and the through hole 54T8 formed on the dielectric layer 54 are provided, thereby replacing the second inductor conductor layer 551, the through hole column T6 (through holes 53T6, 54T6), and the through hole column T7 (through holes 53T7, 54T7) in the present embodiment. The first inductor conductor layer 661 is connected to the second inductor conductor layer 553 through the through hole column T5. The second inductor conductor layer 553 is connected to the second inductor conductor layer 543 through the through hole 54T8. The second inductor conductor layer 543 and the capacitor conductor layer 531 are connected via a via 53T8. The via 53T8 is connected to the center of gravity of the capacitor conductor layer 531.

[0109] The first and second inductors L1 and L2 are inductors wound around axes in a direction parallel to the stacking direction T. In the low-pass filter of the third comparative example, the third inductor L3 is formed by the second inductor conductor layers 543 and 553 as an inductor wound around axes in a direction parallel to the stacking direction T. In the third comparative example, the magnetic fields generated by the first inductor L1 and the second inductor L2 are blocked by the third inductor L3, and the Q value is reduced.

[0110] In contrast, in the present embodiment, a wound inductor as in the third comparative example is not provided as the third inductor L3 . Therefore, according to the present embodiment, it is possible to prevent a decrease in the Q value.

[0111] As can be seen from the above, according to the present embodiment, it is possible to sufficiently adjust the magnitude of the insertion loss in the stop band while preventing the characteristics of the low-pass filter 1 from being deteriorated.

[0112] Next, other effects of this embodiment are described. When the dielectric layers 51 to 68 are stacked to form the stack 50, the capacitor conductor layer 531 is slightly deformed because it is squeezed by the through hole. If the deformation of the capacitor conductor layer 531 increases, the capacitance of each capacitor C1 to C3 will deviate from the expected value, and as a result, the expected characteristics may not be obtained.

[0113] In contrast, in this embodiment, two through-hole rows T6 and T7 are connected to the capacitor conductor layer 531. Therefore, according to this embodiment, the deformation amount of the capacitor conductor layer 531 can be suppressed compared with the case where one through-hole row is connected to the capacitor conductor layer 531 as in the low-pass filter of the first comparative example. As a result, according to this embodiment, the capacitance of each of the capacitors C1 to C3 can be suppressed from deviating from the expected value.

[0114] In addition, in the present embodiment, the capacitor conductor layers 541 and 542 that are not connected to the second inductor conductor layer 551 are interposed between the second inductor conductor layer 551 and the capacitor conductor layer 531. According to the present embodiment, by arranging the capacitor conductor layers 541 and 542 as described above, it is possible to reduce the dimension in the Z direction of the laminate 50. The second end of the first portion 551a and the second end of the second portion 551b are connected to each other.

[0115] [Modifications]

[0116] Next, the first and second modified examples of the low-pass filter 1 of the present embodiment will be described. Fig.13 The first modification example will be described. Fig.13 FIG. 5 is an explanatory diagram showing a second inductor conductor layer according to a first modification. The laminate 50 according to the first modification includes Fig.13 The dielectric layer 155 shown replaces Figure 4B The fifth dielectric layer 55 is shown. A second inductor conductor layer 1551 is formed on the pattern forming surface of the dielectric layer 155. The second inductor conductor layer 1551 includes a first portion 1551a and a second portion 1551b. The first portion 1551a and the second portion 1551b have a first end and a second end located on opposite sides of each other. The first end of the first portion 1551a and the first end of the second portion 1551b are connected to each other. Fig.13 In FIG. 1 , a boundary between the first portion 1551a and the second portion 1551b is indicated by a dotted line.

[0117] In the first modification, the through hole 54T6 (see Figure 4A ) is connected to the vicinity of the second end of the first portion 1551a. In the first modification, the through hole 54T7 (see Figure 4A ) is connected to the vicinity of the second end of the second part 1551b.

[0118] In addition, through holes 155T1, 155T2, 155T3, 155T4, and 155T5 are formed in the dielectric layer 155. The through holes 54T1 to 54T4 (see Figure 4A) are connected to the through holes 155T1 to 155T4, respectively. At the boundary between the first part 1551a and the second part 1551b and its vicinity, the through hole 155T5 is connected to the first part 1551a and the second part 1551b. The through holes 155T1 to 155T5 are respectively connected to the through holes 155T1 to 155T4 formed in Figure 4C The vias 56T1 - 56T5 on the dielectric layer 56 are shown to be connected.

[0119] The first portion 1551a constitutes the first inductor portion L31 of the third inductor L3 (see Figure 1 The second portion 1551b constitutes the second inductor portion L32 of the third inductor L3 (see Figure 1 ). When viewed from a direction parallel to the stacking direction T (for example, the Z direction), the second inductor conductor layer 1551 has an axisymmetric shape centered on a symmetry axis that passes through a connection portion between the second inductor conductor layer 1551 and the through hole 155T5 and is orthogonal to the stacking direction T.

[0120] Next, refer to Fig.14 The second modification example will be described. Fig.14 FIG. 5 is an explanatory diagram showing a first inductor conductor layer according to a second modification. The laminate 50 according to the second modification includes Fig.14 The dielectric layer 166 shown replaces Figure 6C The 16th dielectric layer 66 is shown. A first inductor conductor layer 1661 is formed on the pattern forming surface of the dielectric layer 166. The first inductor conductor layer 1661 includes a first portion 1661a and a second portion 1661b. The first portion 1661a and the second portion 1661b have a first end and a second end located on opposite sides of each other. The first end of the first portion 1661a and the first end of the second portion 1661b are connected to each other. Fig.14 In FIG. 1 , a boundary between the first portion 1661a and the second portion 1661b is indicated by a dotted line.

[0121] Through holes 166T1, 166T2, and 166T5 are formed in the dielectric layer 166. The through hole 166T1 is connected to the vicinity of the second end of the first portion 1661a. The through hole 166T2 is connected to the vicinity of the second end of the second portion 1661b. The through hole 166T5 is connected to the first portion 1661a and the second portion 1661b at and near the boundary between the first portion 1661a and the second portion 1661b.

[0122] In the second modification, the through hole 65T1 (see Figure 6B ) is connected to the vicinity of the second end of the first portion 1661a to form the laminate 50. For example, by adjusting the conductor layers 631 and 641 (see Figure 5C and Fig. 6A ) can connect the through hole 65T1 to the vicinity of the second end of the first portion 1661a. Similarly, in the second modification, the through hole 65T2 (see Figure 6B ) is connected to the vicinity of the second end of the second portion 1661b to form the stacked body 50. Similarly, in the second modification, the through hole 65T5 (see Figure 6B ) The stacked body 50 is formed in a manner that connects the first part 1661a and the second part 1661b at the boundary between the first part 1661a and the second part 1661b and in the vicinity thereof.

[0123] Although not shown in the figure, the laminate 50 in the second modification includes a dielectric layer formed with a first inductor conductor layer having the same shape as the first inductor conductor layer 1661, thereby replacing Fig. 7A The 17th dielectric layer 67 is shown. The through hole 166T1 formed in the dielectric layer 166 is connected to the vicinity of the second end of the first portion of the first inductor conductor layer (not shown). The through hole 166T2 formed in the dielectric layer 166 is connected to the vicinity of the second end of the second portion of the first inductor conductor layer (not shown). The through hole 166T5 formed in the dielectric layer 166 is connected to the first portion and the second portion of the first inductor conductor layer (not shown) at the boundary between the first portion and the second portion of the first inductor conductor layer (not shown) and in the vicinity thereof.

[0124] The first portion 1661a of the first inductor conductive layer 1661 and the first portion of the first inductor conductive layer (not shown) constitute the first inductor L1 (see Figure 1 The second portion 1661b of the first inductor conductor layer 1661 and the second portion of the first inductor conductor layer (not shown) constitute the second inductor L2 (see Figure 1 ). When viewed from a direction (e.g., Z direction) parallel to the stacking direction T, the first inductor conductor layer 1661 has an axisymmetric shape centered on an axis of symmetry that passes through the connection between the first inductor conductor layer 1661 and the through hole 65T5 and is orthogonal to the stacking direction T. In particular, in the second modification, the axis of symmetry is perpendicular to the stacking direction T. Fig.14 The first inductor conductor layer (not shown) has the same axisymmetric shape as the first inductor conductor layer 1661 .

[0125] [Second embodiment]

[0126] Next, a second embodiment of the present invention will be described. The circuit structure of the low-pass filter 1 of this embodiment is similar to that of the reference Figure 1The circuit structure of the low-pass filter 1 of the first embodiment described above is the same. In addition, the low-pass filter 1 of this embodiment is the same as the low-pass filter 1 of the first embodiment, including Figure 2 The laminated body 50 and the terminals 111 to 116 are shown.

[0127] The laminate 50 in this embodiment has 17 laminated dielectric layers instead of the dielectric layers 51 to 68 in the first embodiment. Hereinafter, the 17 dielectric layers are referred to as the first to 17th dielectric layers in order from bottom to top. In addition, reference numerals 71 to 87 represent the first to 17th dielectric layers.

[0128] Fig.15A The pattern formation surface of the first dielectric layer 71 is shown. A conductive layer and a through hole are not formed on the dielectric layer 71.

[0129] Fig. 15B The pattern forming surface of the second dielectric layer 72 is shown. A capacitor conductor layer 721 is formed on the pattern forming surface of the dielectric layer 72. In addition, through holes 72T1, 72T2, 72T3, and 72T4 are formed in the dielectric layer 72. The through holes 72T1 to 72T4 are connected to the conductor layer 721.

[0130] Fig. 15C 73 shows the patterned surface of the third dielectric layer 73. A capacitor conductor layer 731 and conductor layers 732, 733, 734, and 735 are formed on the patterned surface of the dielectric layer 73. The conductor layers 732, 733, 734, and 735 are connected to the terminals 111, 114, 113, and 116 (see FIG. Figure 2 ). The through holes 72T1 to 72T4 formed in the dielectric layer 72 are connected to the conductor layers 732 to 735, respectively. In addition, through holes 73T6 and 73T7 are formed in the dielectric layer 73. The through holes 73T6 and 73T7 are connected to the conductor layer 731.

[0131] Fig.16A 2 shows the patterned surface of the fourth dielectric layer 74. The capacitor conductor layers 741 and 742 are formed on the patterned surface of the dielectric layer 74. The conductor layer 741 and the terminal 112 (see FIG. Figure 2 ) is connected. The conductor layer 742 is connected to the terminal 115 (refer to Figure 2 ) are connected. In addition, through holes 74T6 and 74T7 are formed in the dielectric layer 74. Through holes 73T6 and 73T7 formed in the dielectric layer 73 are connected to the through holes 74T6 and 74T7, respectively.

[0132] Fig. 16BThe pattern forming surface of the dielectric layer 75 of the fifth layer is shown. A second inductor conductor layer 751 is formed on the pattern forming surface of the dielectric layer 75. The second inductor conductor layer 751 includes a first portion 751a and a second portion 751b. The first portion 751a and the second portion 751b have a first end and a second end located on opposite sides of each other. The first end of the first portion 751a and the first end of the second portion 751b are connected to each other. Fig. 16B , the boundary between the first portion 751a and the second portion 751b is indicated by a dotted line. A through hole 74T6 formed in the dielectric layer 74 is connected to a portion near the second end of the first portion 751a. A through hole 74T7 formed in the dielectric layer 74 is connected to a portion near the second end of the second portion 751b.

[0133] Furthermore, a through hole 75T5 is formed in the dielectric layer 75. The through hole 75T5 connects the first portion 751a and the second portion 751b at the boundary between the first portion 751a and the second portion 751b and the vicinity thereof.

[0134] Fig. 16C The pattern forming surfaces of the 6th to 11th dielectric layers 76 to 81 are shown. Through holes 76T5 are formed in each of the dielectric layers 76 to 81. The through holes 75T5 formed in the dielectric layer 75 are connected to the through holes 76T5 formed in the dielectric layer 76. In addition, in the dielectric layers 76 to 81, the through holes 76T5 adjacent to each other are connected to each other.

[0135] Fig.17A 1 shows the patterned surface of the dielectric layer 82 of the twelfth layer. Conductive layers 821 and 822 for inductors are formed on the patterned surface of the dielectric layer 82. The conductive layers 821 and 822 have first and second ends located on opposite sides of each other. The first end of the conductive layer 821 is connected to the terminal 112 (see Figure 2 ) is connected. The first end of the conductor layer 822 is connected to the terminal 115 (refer to Figure 2 ) is connected. In addition, through holes 82T1, 82T2, and 82T5 are formed in the dielectric layer 82. The through hole 82T1 is connected to the vicinity of the second end of the conductor layer 821. The through hole 82T2 is connected to the vicinity of the second end of the conductor layer 822. The through hole 76T5 formed in the dielectric layer 81 is connected to the through hole 82T5.

[0136] Fig. 17B 13 shows the patterned surface of the dielectric layer 83. The inductor conductor layers 831 and 832 are formed on the patterned surface of the dielectric layer 83. The conductor layers 831 and 832 have first and second ends located on opposite sides of each other. The first end of the conductor layer 831 is connected to the terminal 112 (see FIG. Figure 2 ) is connected. The first end of the conductor layer 832 is connected to the terminal 115 (refer to Figure 2 ) are connected. In addition, through holes 83T1, 83T2, ​​and 83T5 are formed on the dielectric layer 83. The through hole 82T1 and the through hole 83T1 formed on the dielectric layer 82 are connected to the vicinity of the second end of the conductor layer 831. The through hole 82T2 and the through hole 83T2 formed on the dielectric layer 82 are connected to the vicinity of the second end of the conductor layer 832. The through hole 82T5 formed on the dielectric layer 82 is connected to the through hole 83T5.

[0137] Fig. 17C The pattern formation surface of the 14th dielectric layer 84 is shown. Through holes 84T1, 84T2, and 84T5 are formed in the dielectric layer 84. The through holes 83T1, 83T2, ​​and 83T5 formed in the dielectric layer 83 are connected to the through holes 84T1, 84T2, and 84T5, respectively.

[0138] Fig.18A The pattern forming surface of the dielectric layer 85 of the 15th layer is shown. A first inductor conductor layer 851 is formed on the pattern forming surface of the dielectric layer 85. The first inductor conductor layer 851 includes a first portion 851a and a second portion 851b. The first portion 851a and the second portion 851b have a first end and a second end located on opposite sides of each other. The first end of the first portion 851a and the second end of the second portion 851b are connected to each other. Fig.18A In FIG. 8 , a boundary between the first portion 851a and the second portion 851b is indicated by a dotted line.

[0139] In addition, through holes 85T1, 85T2, and 85T5 are formed in the dielectric layer 85. The through hole 84T1 ​​and the through hole 85T1 formed in the dielectric layer 84 are connected to the vicinity of the second end of the first portion 851a. The through hole 84T2 and the through hole 85T2 formed in the dielectric layer 84 are connected to the vicinity of the second end of the second portion 851b. The through hole 84T5 and the through hole 85T5 formed in the dielectric layer 84 are connected to the first portion 851a and the second portion 851b at the boundary between the first portion 851a and the second portion 851b and its vicinity.

[0140] Fig.18B The pattern forming surface of the dielectric layer 86 of the 16th layer is shown. A first inductor conductor layer 861 is formed on the pattern forming surface of the dielectric layer 86. The first inductor conductor layer 861 includes a first portion 861a and a second portion 861b. The first portion 861a and the second portion 861b have a first end and a second end located on opposite sides of each other. The second end of the first portion 861a and the second end of the second portion 861b are connected to each other. Fig.18B In FIG. 8 , a boundary between the first portion 861a and the second portion 861b is indicated by a dotted line.

[0141] The through hole 85T1 formed in the dielectric layer 85 is connected to the vicinity of the second end of the first portion 861a. The through hole 85T2 formed in the dielectric layer 85 is connected to the vicinity of the second end of the second portion 861b. The through hole 85T5 formed in the dielectric layer 85 is connected to the first portion 861a and the second portion 861b at the boundary between the first portion 861a and the second portion 861b and in the vicinity thereof.

[0142] Fig.18C The 17th dielectric layer 87 is shown in the patterned surface. On the patterned surface of the dielectric layer 87, a mark 871 made of a conductive layer is formed.

[0143] The laminated body 50 (see Figure 2 ) is constructed by stacking dielectric layers 71 to 87 of the first to seventeenth layers in such a manner that the pattern forming surface of the first dielectric layer 71 becomes the bottom surface 50A of the stack 50, and the surface on the opposite side to the pattern forming surface of the seventeenth dielectric layer 87 becomes the top surface 50B of the stack 50.

[0144] Fig.19 2 shows the interior of the laminate 50 formed by laminating the first to seventeenth dielectric layers 71 to 87. Fig.19 As shown, inside the stacked body 50, there are stacked Figures 15A to 18C In addition, in Fig.19 Mark 871 is omitted. Fig. 20 express Fig.19 A portion of the interior of the stacked body 50 shown. Specifically, Fig. 20 The first inductor conductor layer 851 , the second inductor conductor layer 751 , the capacitor conductor layer 731 , and vias connecting these conductor layers are shown.

[0145] Next, Figure 1 The components of the circuit of the low-pass filter 1 shown are Figures 15A to 18C The corresponding relationship of the components inside the laminated body 50 shown in FIG. Fig.18A The first portion 851a of the first inductor conductor layer 851 shown in FIG. Fig.18B The first inductor shown is formed by the first portion 861 a of the conductive layer 861 and the through holes 85T1 and 85T5 .

[0146] The second inductor L2 is composed of Fig.18A The second portion 851b of the first inductor conductor layer 851 shown in FIG. Fig.18B The first inductor shown is formed by the second portion 861 b of the conductive layer 861 and the through holes 85T2 and 85T5 .

[0147] The first inductor portion L31 of the third inductor L3 is composed of Fig. 16B The second inductor portion L32 of the third inductor L3 is composed of the first portion 751a of the conductor layer 751 shown in FIG. Fig. 16B The third inductor portion L33 of the third inductor L3 is composed of the second portion 751b of the conductor layer 751 shown in FIG. Figures 16B to 17C The through holes shown are 75T5, 76T5, 82T5, 83T5, and 84T5.

[0148] Inductor L4 is composed of Fig.17A and Fig. 17B The inductor shown is composed of conductor layers 821, 831 and via 82T1. Fig.17A and 17B The inductor shown is formed by the conductor layers 822, 832 and the through hole 82T2.

[0149] Inductor L6 is composed of Fig. 15C The conductor layer 732 and Fig. 15B The inductor L7 is formed by the through hole 72T1 shown. Fig. 15C The conductor layer 733 and Fig. 15B The inductor L8 is formed by the through hole 72T2 shown. Fig. 15C The conductor layer 734 and Fig. 15B The inductor L9 is formed by the through hole 72T3 shown. Fig. 15C The conductor layer 735 and Fig. 15B The through hole 72T4 shown is formed.

[0150] Capacitor C1 is composed of Fig. 15B and 15C The capacitor shown is formed by conductor layers 721, 731 and a dielectric layer 72 between these conductor layers.

[0151] Capacitor C2 is composed of Fig. 15C and Fig.16A The capacitor shown is formed by conductor layers 731, 741 and a dielectric layer 73 between these conductor layers. Capacitor C3 is composed of Fig. 15C and Fig.16A The capacitor shown is formed by conductor layers 731, 742 and a dielectric layer 73 between these conductor layers.

[0152] Capacitor C4 is composed of Fig. 15B and Fig.16A The capacitor shown is formed by conductor layers 721, 741 and dielectric layers 72, 73 between these conductor layers. Capacitor C5 is composed of Fig. 15B and Fig.16A The capacitor shown is formed by conductor layers 721, 742 and dielectric layers 72, 73 between these conductor layers.

[0153] Capacitor C6 consists of Fig. 15B and 15C The capacitor shown is formed by a conductor layer 721, conductor layers 732 to 735, and a dielectric layer 72 between these conductor layers.

[0154] Next, refer to Figures 15A to 20 , the structural features of the low-pass filter 1 of this embodiment are described. The plurality of conductor layers of the laminate 50 include: a first inductor conductor layer 851, a second inductor conductor layer 751, and a capacitor conductor layer 731 arranged at different positions in the stacking direction T. The first inductor conductor layer 851 constitutes at least a portion of each of the first inductor L1 and the second inductor L2. The second inductor conductor layer 751 includes: a first portion 751a constituting a portion of the first inductor portion L31, and a second portion 751b constituting a portion of the second inductor portion L32. The capacitor conductor layer 731 constitutes a portion of each of the capacitors C1 to C3.

[0155] The first inductor conductor layer 851 and the second inductor conductor layer 751 are connected by a through-hole array T25 consisting of through-holes 75T5, 76T5, 82T5, 83T5, and 84T5 (first through-holes) connected in series. The first portion 751a and the capacitor conductor layer 731 are connected by a through-hole array T26 consisting of through-holes 73T6 and 74T6 (second through-holes) connected in series. The second portion 751b and the capacitor conductor layer 731 are connected by a through-hole array T27 consisting of through-holes 73T7 and 74T7 (third through-holes) connected in series.

[0156] When viewed from one direction (e.g., Z direction) parallel to the stacking direction T, the second inductor conductor layer 751 has a shape that is identical to itself when rotated 180° around a central axis that passes through a connection portion between the second inductor conductor layer 751 and the through hole 75T5 and is parallel to the stacking direction T. When viewed from the Z direction, the first portion 751a and the second portion 751b have shapes that are identical to each other when rotated 180° around the central axis. The through hole array T26 and the through hole array T27 are arranged at symmetrical positions around the connection portion.

[0157] When viewed from the Z direction, the first inductor conductor layer 851 has a shape that is identical to itself when rotated 180° around a central axis that passes through a connection portion of the through hole 84T5 and the first inductor conductor layer 851 and is parallel to the stacking direction T. When viewed from the Z direction, the first portion 851a and the second portion 851b have shapes that are identical to each other when rotated 180° around the central axis.

[0158] The shape of the first inductor conductor layer 861 is the same as the shape of the first inductor conductor layer 851. Therefore, the first inductor conductor layer 861 has the same rotationally symmetric shape as the first inductor conductor layer 851.

[0159] exist Fig.19 , the straight line with the symbol C represents the central axis that intersects the through holes 75T5, 76T5, 82T5, 83T5, 84T5 (first through hole) and is parallel to the stacking direction T. When viewed from the Z direction, the central axis C coincides with the center of gravity of each of the dielectric layers 71 to 87. Not limited to the first inductor conductor layer 851, 861 and the second inductor conductor layer 751, when viewed from the Z direction, the plurality of conductor layers included in the stack 50 each have a shape that is consistent with itself when rotated 180° around the central axis C or a shape that is consistent with other conductor layers. In addition, when viewed from the Z direction, the plurality of through holes included in the stack 50 are each arranged at a position that is consistent with itself when rotated 180° around the central axis C or a position that is consistent with other through holes.

[0160] like FIG. 15C to FIG. 16B As shown, the capacitor conductive layers 741 and 742 are interposed between the second inductor conductive layer 751 and the capacitor conductive layer 731. The second inductor conductive layer 751 partially overlaps with each of the capacitor conductive layers 741 and 742 when viewed from the Z direction.

[0161] The other structures, functions, and effects in this embodiment are the same as those in the first embodiment.

[0162] [simulation]

[0163] Next, an example of each characteristic of the low-pass filter 1 of the first embodiment and the low-pass filter 1 of the second embodiment obtained by simulation is described. In the simulation, the first model and the second model are used. The first model is a model corresponding to the low-pass filter 1 of the first embodiment. The second model is a model corresponding to the low-pass filter 1 of the second embodiment.

[0164] Fig.21 It is a characteristic diagram showing the respective pass-through attenuation characteristics of the first and second models. Fig. 22 It is a characteristic diagram showing each insertion loss of the first and second models. Fig.23 The first input and output ports 2 of the first and second models (see Figure 1 )’s reflection loss characteristic diagram. Fig.24 The second input and output ports 3 of the first and second models (see Figure 1 ) is a characteristic diagram of the reflection loss. Figure 21 to Figure 24 , the horizontal axis represents frequency. Fig.21 The vertical axis represents the attenuation amount. Fig. 22 The vertical axis represents insertion loss. Fig.23 as well as Fig.24 The vertical axes in represent reflection loss.

[0165] exist Fig.21 In FIG. 1 , the curve with symbol 91 represents the attenuation characteristic of the first model, and the curve with symbol 92 represents the attenuation characteristic of the second model. Fig. 22 In FIG. 1 , the curve with symbol 93 represents the insertion loss of the first model, and the curve with symbol 94 represents the insertion loss of the second model. Fig.23 In FIG. 1 , the curve with symbol 95 represents the reflection loss of the first model, and the curve with symbol 96 represents the reflection loss of the second model. Fig.24 , the curve with the symbol 97 represents the reflection loss of the first model, and the curve with the symbol 98 represents the reflection loss of the second model.

[0166] like Fig.21 As shown in FIG. 1 , in the first model and the second model, two attenuation poles are shown in the stopband near the cutoff frequency. The frequencies of these two attenuation poles are mainly adjusted by the third inductor L3. In the first model and the second model, the shapes of the second inductor conductor layer of the first inductor portion L31 and the second inductor portion L32 constituting the third inductor L3 are different from each other. From the simulation results, it can be seen that by adjusting the shape of the second inductor conductor layer, not only the attenuation pole but also the insertion loss in the stopband can be adjusted.

[0167] In addition, the present invention is not limited to the above-mentioned embodiments, and various modifications can be made. For example, as long as the requirements of the claims are met, the structure of the stacked low-pass filter of the present invention and the shapes of the inductor conductor layer and the capacitor conductor layer are not limited to the examples shown in the embodiments, but can be arbitrary.

[0168] It is obvious that various modes and modifications of the present invention can be implemented based on the above description. Therefore, the present invention can also be implemented in modes other than the above-described preferred modes within the scope of the equivalents of the claims.

Claims

1. A stacked low-pass filter, characterized in that: include: A first inductor and a second inductor connected in series; In terms of circuit structure, a third inductor is provided between a connection point between the first inductor and the second inductor and ground; a capacitor connected to the third inductor; a laminated body including a plurality of laminated dielectric layers and a plurality of conductor layers, in which the first inductor, the second inductor, the third inductor, and the capacitor are integrated; The third inductor includes: a first inductor portion and a second inductor portion connected in parallel, The plurality of conductor layers include a first inductor conductor layer, a second inductor conductor layer, and a capacitor conductor layer, which are arranged at different positions in a stacking direction of the plurality of dielectric layers. The first inductor conductor layer constitutes at least a portion of each of the first inductor and the second inductor. The second inductor conductor layer includes a first portion constituting the first inductor portion and a second portion constituting the second inductor portion. The capacitor conductor layer constitutes a part of the capacitor, The laminate further includes: at least one first through hole connecting the first inductor conductor layer and the second inductor conductor layer; at least one second through hole connecting the first portion of the second inductor conductor layer and the capacitor conductor layer; and at least one third through hole connecting the second portion of the second inductor conductor layer and the capacitor conductor layer.

2. The stacked low-pass filter according to claim 1, wherein The third inductor further includes: a third inductor portion provided between the connection point and the first inductor portion and the second inductor portion in terms of circuit structure; The third inductor portion is formed by the at least one first through hole.

3. The stacked low-pass filter according to claim 1, wherein: The at least one first through hole is a plurality of first through holes connected in series.

4. The stacked low-pass filter according to claim 1, wherein: The second inductor conductor layer has a rotationally symmetrical shape centered on a connection portion between the second inductor conductor layer and the at least one first via hole when viewed from a direction parallel to the stacking direction.

5. The stacked low-pass filter according to claim 4, wherein: The at least one second through hole and the at least one third through hole are arranged at symmetrical positions centered on the connection portion when viewed from a direction parallel to the stacking direction.

6. The stacked low-pass filter according to claim 1, wherein: When viewed from a direction parallel to the stacking direction, the second inductor conductor layer has an axisymmetric shape centered on a symmetry axis that passes through a connection portion between the second inductor conductor layer and the at least one first via and is orthogonal to the stacking direction.

7. The stacked low-pass filter according to claim 6, wherein: The at least one second through hole and the at least one third through hole are arranged at symmetrical positions centered on the connection portion when viewed from a direction parallel to the stacking direction.

8. The stacked low-pass filter according to claim 1, wherein: The first inductor conductor layer has a rotationally symmetrical shape centered on a connection portion between the first inductor conductor layer and the at least one first through hole when viewed from a direction parallel to the stacking direction.

9. The stacked low-pass filter according to claim 1, wherein: When viewed from a direction parallel to the stacking direction, the first inductor conductor layer has an axisymmetric shape centered on a symmetry axis that passes through a connection portion between the first inductor conductor layer and the at least one first via and is orthogonal to the stacking direction.

10. The stacked low-pass filter according to claim 1, wherein: When viewed from a direction parallel to the stacking direction, each of the plurality of conductor layers has a shape consistent with itself or a shape consistent with other conductor layers when rotated around a central axis intersecting the at least one first through hole and parallel to the stacking direction.

11. The stacked low-pass filter according to claim 10, wherein: The stacked body further includes a plurality of through holes, wherein the plurality of through holes include the at least one first through hole, the at least one second through hole, and the at least one third through hole. When viewed from a direction parallel to the stacking direction, each of the plurality of through holes is arranged at a position that is consistent with itself or a position that is consistent with other through holes when rotating around the central axis.

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