Vertical cavity surface emitting laser epitaxial structure and manufacturing method thereof

Abstract

The present invention provides a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof, the manufacturing method comprising: providing a substrate, sequentially forming a first buffer layer, an etching stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer on the substrate; the etching stop layer is made of a material containing doped silicon (Al x Ga (1‑x) ) y In z As n P m The corrosion stop layer can achieve rapid corrosion, and the corrosion stop layer has a high corrosion selectivity ratio with the substrate, thereby improving the phenomenon of uneven corrosion and substrate residue, thereby improving the quality and performance of the device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic technology, and in particular to a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof. Background Art

[0002] A laser is a device that uses the principle of stimulated emission of radiation to amplify or oscillate light within certain excited materials. A vertical-cavity surface-emitting laser (VCSEL) is a semiconductor laser whose laser emission is perpendicular to the epitaxial plane. Compared to edge-emitting lasers, which typically emit laser light from the edge (parallel to the epitaxial direction), VCSELs offer advantages such as a smaller far-field divergence angle, easier fiber coupling, lower threshold current, higher bandwidth, and higher test efficiency.

[0003] The epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL) typically consists of a gallium arsenide (GaAs) substrate, a GaAs buffer layer, an etched stop layer, an N-type distributed Bragg reflector (DBR) layer, an oxide layer, an active layer, and a P-type DBR layer. Typically, the N-type DBR layer consists of 40 growth pairs, and the P-type DBR layer consists of 20 growth pairs. The substrate is thinned to approximately 100μm, and laser light is emitted from one side of the P-type DBR layer.

[0004] However, the existing epitaxial structure leads to the following disadvantages: the DBR layer growth process is complex; the single corrosion cutoff layer is unevenly corroded, resulting in inconsistent voltage; the uneven stress of the epitaxial material itself leads to fragmentation; and the unevenness of the epitaxial material leads to excessive corrosion of the ohmic contact layer, resulting in small black holes in the epitaxial layer. Summary of the Invention

[0005] The object of the present invention is to provide a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof, which can improve the phenomenon of uneven corrosion and substrate residue, thereby improving the performance of the device.

[0006] To solve the above technical problems, the present invention provides a method for manufacturing a vertical cavity surface emitting laser epitaxial structure, comprising the following steps:

[0007] Providing a substrate, and sequentially forming a first buffer layer, an etching stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer, and a P-type DBR layer on the substrate;

[0008] The material of the corrosion stop layer includes silicon-doped (Al x Ga (1-x) ) y In z Asn P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m.

[0009] Optionally, a first strain layer and a second strain layer are further formed between the ohmic contact layer and the second buffer layer. The materials of the first strain layer and the second strain layer both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b. The contents of P and As in the first strain layer and the second strain layer are different.

[0010] Optionally, in the first strain layer and the second strain layer, m1 > m2, n1 < n2, where m1 and n1 are the contents of P and As in the first strain layer respectively, and m2 and n2 are the contents of P and As in the second strain layer respectively.

[0011] Optionally, the material of the ohmic contact layer contains gallium arsenide doped with silicon, the material of the second buffer layer contains gallium arsenide doped with silicon, and the contents of doped silicon in the ohmic contact layer and the second buffer layer are different.

[0012] Optionally, an oxide layer is further formed between the N-type DBR layer and the active layer; a P-type gallium arsenide layer is further formed on the P-type DBR layer.

[0013] Optionally, the growth logarithm of the N-type DBR layer is 15 - 25 pairs, the growth logarithm of the P-type DBR layer is 30 - 40 pairs, and the N-type DBR layer and the P-type DBR layer use uniform doping.

[0014] Optionally, the corrosion stop layer is formed by metalorganic chemical vapor deposition, the chamber pressure is 50 mbar - 500 mbar, the chamber temperature is 400 °C - 800 °C; the thickness of the corrosion stop layer is 10 nm - 200 nm; or,

[0015] The ohmic contact layer is formed by metalorganic chemical vapor deposition, the chamber pressure is 50 mbar - 500 mbar, the chamber temperature is 400 °C - 800 °C; the thickness of the ohmic contact layer is 10 nm - 200 nm.

[0016] Optionally, the first strain layer is formed by metalorganic chemical vapor deposition, the chamber pressure is 50 mbar - 500 mbar, and the chamber temperature is 400°C - 800°C; the thickness of the first strain layer is 10 nm - 200 nm; or,

[0017] The second strain layer is formed by metalorganic chemical vapor deposition, the chamber pressure is 50 mbar - 500 mbar, and the growth temperature is 400°C - 800°C; the thickness of the second strain layer is 10 nm - 200 nm.

[0018] Correspondingly, the present invention further provides a vertical cavity surface emitting laser epitaxial structure, including:

[0019] A substrate, a first buffer layer, an etch stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer, and a P-type DBR layer sequentially located on the substrate;

[0020] The material of the etch stop layer contains doped silicon (Al x Ga (1-x) ) y In z As n P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m.

[0021] Optionally, a first strain layer and a second strain layer are further formed between the ohmic contact layer and the second buffer layer, and the materials of the first strain layer and the second strain layer both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b, and the contents of P and As in the first strain layer and the second strain layer are different.

[0022] In the vertical cavity surface emitting laser epitaxial structure and its manufacturing method provided by the present invention, an etch stop layer, an ohmic contact layer, and a second buffer layer are sequentially formed between the first buffer layer and the N-type DBR layer, and the material of the etch stop layer contains doped silicon (Al x Ga (1-x) ) y In z Asn P m , which can achieve rapid corrosion, and the corrosion stop layer and the substrate have a high corrosion selectivity ratio, thereby improving the phenomenon of uneven corrosion and the residue of the substrate, thereby improving the quality and performance of the device.

[0023] Furthermore, a first strain layer and a second strain layer are formed between the ohmic contact layer and the second buffer layer, and the materials of the first strain layer and the second strain layer both include (Al x Ga (1-x) ) y In z As n P m Si a O b C c The first strained layer balances the compressive strain generated by the quantum wells, while the second strained layer relieves stress. Furthermore, the P and As contents in the first and second strained layers differ; this variation in content further relieves stress and makes the epitaxial structure more uniform. This approach achieves the following beneficial effects: reducing the complexity of growing the N-type and P-type DBR layers; improving current distribution and beam quality; alleviating substrate warping caused by stress imbalance; improving contact voltage; and reducing the appearance of small black holes in the epitaxial structure, ultimately further enhancing device quality and performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Those skilled in the art should understand that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0025] Figure 1 It is a structural schematic diagram of a vertical cavity surface emitting laser epitaxial structure provided by one embodiment of the present invention.

[0026] Reference numerals:

[0027] 10-substrate; 11-first buffer layer; 12-etching stop layer; 13-ohmic contact layer; 14-first strained layer; 15-second strained layer; 16-second buffer layer; 17-N-type DBR layer; 18-oxide layer; 19-active layer; 20-P-type DBR layer; 21-P-type gallium arsenide layer. DETAILED DESCRIPTION

[0028] To make the objectives, advantages, and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are in very simplified forms and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the objectives of the embodiments of the present invention. In addition, the structures shown in the accompanying drawings are often part of the actual structures. Specifically, the accompanying drawings need to show different emphases, and sometimes different scales are used.

[0029] As used in the present invention, the singular forms "a", "an", and "the" include plural objects. The term "or" is generally used in the sense of including "and / or". The term "several" is generally used in the sense of including "at least one". The term "at least two" is generally used in the sense of including "two or more". In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", and "third" may explicitly or implicitly include one or at least two of such features, unless the content clearly indicates otherwise.

[0030] Figure 1 It is a schematic structural diagram of a vertical cavity surface emitting laser epitaxial structure provided by an embodiment of the present invention. As Figure 1 shown, the manufacturing method of the vertical cavity surface emitting laser epitaxial structure includes the following steps:

[0031] Provide a substrate 10, and sequentially form a first buffer layer 11, an etch stop layer 12, an ohmic contact layer 13, a second buffer layer 16, an N-type DBR layer 17, an active layer 19, and a P-type DBR layer 20 on the substrate;

[0032] The material of the etch stop layer 12 includes doped silicon (Al x Ga (1-x) ) y In z As n [[ID=2,5]]P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m.

[0033] The etch stop layer 12 can achieve rapid etching, and the etch stop layer 12 and the substrate 10 have a high etch selectivity, so as to improve the phenomenon of uneven etching, improve the residue of the substrate 10, and thus improve the quality and performance of the device.

[0034] In this embodiment, the material of the substrate 10 is preferably gallium arsenide (GaAs), and the gallium arsenide is N-type doped, and the doping atoms include silicon. The material of the first buffer layer 11 is also preferably gallium arsenide, which is consistent with the material of the substrate 10. The material of the ohmic contact layer 13 includes gallium arsenide doped with silicon, and the material of the second buffer layer 16 also includes gallium arsenide doped with silicon, and the content of silicon doped in the ohmic contact layer 13 and the second buffer layer 16 is different. In another embodiment, the content of silicon doped in the ohmic contact layer 13 and the second buffer layer 16 may also be the same, and the present invention does not limit this.

[0035] Preferably, an oxide layer 18 is further formed between the N-type DBR layer 17 and the active layer 19, and a P-type gallium arsenide layer 21 is further formed on the P-type DBR layer 20. The oxide layer 18 may include a semiconductor compound containing aluminum, such as AlAs (aluminum arsenide), AlGaAs (aluminum gallium arsenide), InAlGaAs (indium aluminum gallium arsenide), etc., and the semiconductor compound containing aluminum is oxidized to form the oxide layer 18. The oxide layer 18 may have a non-oxidized light-transmitting region arranged at the central position. The resistance of the oxide layer 18 may be relatively high, but on the contrary, the refractive index of the oxide layer 18 is relatively low. Therefore, current can be injected into the light-transmitting region, so that the laser is concentrated in the center of the element.

[0036] The lattice mismatch between P (phosphorus) and As (arsenic) in the etch stop layer 12 will cause uneven stress in the epitaxial structure. In this embodiment, preferably, a first strain layer 14 and a second strain layer 15 are further formed between the ohmic contact layer 13 and the second buffer layer 16 to release the stress. The materials of the first strain layer 14 and the second strain layer 15 both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b, and the contents of P and As in the first strain layer and the second strain layer are different.

[0037] The first strained layer 14 balances the compressive strain generated by the quantum wells, while the second strained layer 15 releases stress. Furthermore, the P and As contents in the first and second strained layers 14, 15 differ, and this variation in content further releases stress, resulting in a more uniform epitaxial structure. This approach achieves the following beneficial effects: reducing the complexity of growing the N-type DBR layer 17 and the P-type DBR layer 20; improving current distribution and beam quality; alleviating substrate 10 warping caused by stress imbalance; improving contact voltage; and reducing the occurrence of small black holes in the epitaxial structure, ultimately enhancing device quality and performance.

[0038] For example, the corrosion stop layer 12, the ohmic contact layer 13, the first strained layer 14 and the second strained layer 15 can be formed by metal-organic chemical vapor deposition (MOCVD). Of course, other methods known to those skilled in the art can also be used. When forming the corrosion stop layer 12, the chamber pressure is 50mbar-500mbar, the chamber temperature is 400℃-800℃, and the thickness of the corrosion stop layer 12 is 10nm-200nm. The corrosion stop layer 12 can achieve rapid corrosion and reduce the residue of the substrate 10, thereby achieving an optimized corrosion effect. When forming the ohmic contact layer 13, the chamber pressure is 50mbar-500mbar, the chamber temperature is 400℃-800℃, and the thickness of the ohmic contact layer 13 is 10nm-200nm.

[0039] When forming the first strained layer 14, the chamber pressure is 50mbar-500mbar, the growth temperature is 400°C-800°C, and the thickness of the first strained layer 14 is 10nm-200nm. The first strained layer 14 can achieve compressive strain balance caused by the quantum well, making the epitaxial structure more uniform. When forming the second strained layer 15, the chamber pressure is 50mbar-500mbar, the growth temperature is 400°C-800°C, and the thickness of the second strained layer 15 is 10nm-200nm. The second strained layer 15 can achieve stress release, making the epitaxial structure more uniform. In addition, the P and As contents in the first and second strained layers are different. The change in content can further achieve stress release, making the epitaxial structure more uniform.

[0040] Preferably, in the first strained layer 14 and the second strained layer 15, m1>m2, and n1<n2, where m1 and n1 are the P (phosphorus) content and As (arsenic) content in the first strained layer 14, respectively, and m2 and n2 are the P content and As content in the second strained layer 15, respectively. The variation in the content in the first strained layer 14 and the second strained layer 15 can further relieve stress and make the epitaxial structure more uniform.

[0041] Exemplarily, the number of growth pairs of the N-type DBR layer 17 includes 15 to 25 pairs, which is a decrease compared to the 40 pairs in the prior art. The N-type DBR layer 17 is formed by stacking at least two semiconductor materials with different refractive indices. For example, the N-type DBR layer 17 has an overlapping structure of a first refractive index and a second refractive index, where the first refractive index is greater than the second refractive index, and the two refractive index materials together comprise 15 to 25 pairs. In one embodiment of the present invention, the N-type DBR layer 17 may include a sequentially stacked N-type aluminum gallium arsenide layer (AlGaAs) and an N-type gallium arsenide layer (GaAs). AlGaAs is a high-refractive-index material, while GaAs is a low-refractive-index material. Multiple layers of high-refractive-index N-type AlGaAs layers and low-refractive-index N-type GaAs layers are stacked to form the N-type DBR layer 17. Furthermore, based on the conventional DBR structure, the refractive index of the multiple layers of the N-type AlGaAs layers can gradually change, and the refractive index of the multiple layers of the N-type GaAs layers can also gradually change, but this is not limited to this.

[0042] The P-type DBR layer 20 has 30 to 40 growth pairs, an increase compared to the 20 pairs in the prior art. Similar to the N-type DBR layer 17, the P-type DBR layer 20 is formed by stacking at least two semiconductor materials with different refractive indices. For example, the P-type DBR layer 20 has an overlapping structure of a first refractive index and a second refractive index, with the first refractive index being greater than the second refractive index. The two refractive index materials comprise 30 to 40 pairs in total. In one embodiment of the present invention, the P-type DBR layer 20 may include a P-type aluminum gallium arsenide layer (AlGaAs) and a P-type gallium arsenide layer (GaAs) disposed sequentially. Aluminum gallium arsenide is a high-refractive index material, while gallium arsenide is a low-refractive index material. Multiple high-refractive index P-type aluminum gallium arsenide layers and low-refractive index P-type gallium arsenide layers are stacked to form the P-type DBR layer 20. Furthermore, based on the conventional structure of the DBR, the refractive index of the multiple layers of the P-type AlGaAs layer can be gradually changed, and the refractive index of the multiple layers of the P-type GaAs layer can also be gradually changed, of course, but not limited to this. Preferably, the N-type DBR layer 17 and the P-type DBR layer 20 are uniformly doped.

[0043] In the embodiment of the present invention, a corrosion stop layer 12, an ohmic contact layer 13, and a second buffer layer 16 are sequentially formed between the first buffer layer 11 and the N-type DBR layer 17. The material of the corrosion stop layer 12 includes doped silicon (Al x Ga (1-x) ) y In z As n P m , which can achieve rapid corrosion, and the corrosion stop layer 12 and the substrate 10 have a high corrosion selectivity, thereby improving the phenomenon of uneven corrosion and the residue of the substrate 10, thereby improving the quality and performance of the device,

[0044] A first strained layer 14 and a second strained layer 15 are formed between the ohmic contact layer 13 and the second buffer layer 16. The materials of the first strained layer 14 and the second strained layer 15 both include (Al x Ga (1-x) ) y In z As n P m Si a O b C c The first strained layer 14 balances the compressive strain generated by the quantum wells, while the second strained layer 15 releases stress. Furthermore, the P and As contents in the first and second strained layers 14 and 15 differ, and this variation in content further releases stress, resulting in a more uniform epitaxial structure. This approach achieves the following beneficial effects: reducing the complexity of growing the N-type and P-type DBR layers; improving current distribution and beam quality; alleviating substrate warping caused by stress imbalance; improving contact voltage; and reducing the appearance of small black holes in the epitaxial structure, ultimately enhancing device quality and performance.

[0045] Correspondingly, the present invention also provides a vertical cavity surface emitting laser epitaxial structure, which is manufactured using the above-mentioned vertical cavity surface emitting laser epitaxial structure manufacturing method. Figure 1 As shown, the vertical cavity surface emitting laser epitaxial structure includes:

[0046] A substrate 10, and a first buffer layer 11, an etching stop layer 12, an ohmic contact layer 13, a second buffer layer 16, an N-type DBR layer 17, an active layer 19, and a P-type DBR layer 20 sequentially disposed on the substrate;

[0047] The material of the corrosion stop layer 12 includes silicon-doped (Al x Ga (1-x) ) y In z Asn P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m.

[0048] Preferably, a first strain layer 14 and a second strain layer 15 are further formed between the ohmic contact layer 13 and the second buffer layer 16. The materials of the first strain layer 14 and the second strain layer 15 both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b. The contents of P and As in the first strain layer and the second strain layer are different.

[0049] Preferably, in the first strain layer 14 and the second strain layer 15, m1 > m2, n1 < n2, where m1 and n1 are the contents of P and As in the first strain layer 14 respectively, and m2 and n2 are the contents of P and As in the second strain layer 15 respectively.

[0050] Preferably, the material of the ohmic contact layer 13 contains gallium arsenide doped with silicon, and the material of the second buffer layer 16 contains gallium arsenide doped with silicon, and the contents of the doped silicon in the ohmic contact layer 13 and the second buffer layer 16 are different.

[0051] Preferably, an oxide layer 18 is further formed between the N-type DBR layer 17 and the active layer 19; a P-type gallium arsenide layer 21 is further formed on the P-type DBR layer 20.

[0052] Preferably, the growth logarithm of the N-type DBR layer includes 15 to 25 pairs, and the growth logarithm of the P-type DBR layer includes 30 to 40 pairs. The N-type DBR layer 17 may include an N-type aluminum gallium arsenide layer (AlGaAs) and an N-type gallium arsenide layer stacked in sequence. The P-type DBR layer 20 may include a P-type aluminum gallium arsenide layer (AlGaAs) and a P-type gallium arsenide layer stacked in sequence, but is not limited thereto.

[0053] [[ID=三十九]]In summary, in the vertical cavity surface emitting laser epitaxial structure and its manufacturing method provided by the present invention, an etch stop layer, an ohmic contact layer and a second buffer layer are sequentially formed between the first buffer layer and the N-type DBR layer. The material of the etch stop layer contains (Al doped with silicon xGa (1-x) ) y In z As n P m , which can achieve rapid corrosion, and the corrosion stop layer and the substrate have a high corrosion selectivity ratio, thereby improving the phenomenon of uneven corrosion and the residue of the substrate, thereby improving the quality and performance of the device.

[0054] Furthermore, a first strain layer and a second strain layer are formed between the ohmic contact layer and the second buffer layer, and the materials of the first strain layer and the second strain layer both include (Al x Ga (1-x) ) y In z As n P m Si a O b C c The first strained layer balances the compressive strain generated by the quantum wells, while the second strained layer relieves stress. Furthermore, the P and As contents in the first and second strained layers differ; this variation in content further relieves stress and makes the epitaxial structure more uniform. This approach achieves the following beneficial effects: reducing the complexity of growing the N-type and P-type DBR layers; improving current distribution and beam quality; alleviating substrate warping caused by stress imbalance; improving contact voltage; and reducing the appearance of small black holes in the epitaxial structure.

[0055] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A method for manufacturing a vertical cavity surface emitting laser epitaxial structure, characterized in that: The following steps are involved: Providing a substrate, and sequentially forming a first buffer layer, an etching stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer, and a P-type DBR layer on the substrate; The material of the corrosion stop layer includes silicon-doped (Al x Ga (1-x) ) y In z As n P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m; A first strain layer and a second strain layer are further formed between the ohmic contact layer and the second buffer layer. The materials of the first strain layer and the second strain layer both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b. The contents of P and As in the first strain layer and the second strain layer are different.

2. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: In the first strained layer and the second strained layer, m1>m2, n1<n2, wherein m1 and n1 are respectively the P content and As content in the first strained layer, and m2 and n2 are respectively the P content and As content in the second strained layer.

3. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: The material of the ohmic contact layer includes silicon-doped gallium arsenide, the material of the second buffer layer includes silicon-doped gallium arsenide, and the content of silicon doped in the ohmic contact layer and the second buffer layer is different.

4. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: An oxide layer is formed between the N-type DBR layer and the active layer; and a P-type gallium arsenide layer is formed on the P-type DBR layer.

5. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: The number of growth pairs of the N-type DBR layer includes 15 to 25 pairs, the number of growth pairs of the P-type DBR layer includes 30 to 40 pairs, and the N-type DBR layer and the P-type DBR layer are uniformly doped.

6. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: The corrosion stop layer is formed by metal organic chemical vapor deposition, the chamber pressure is 50mbar-500mbar, the chamber temperature is 400℃-800℃; the thickness of the corrosion stop layer is 10nm-200nm; or, The ohmic contact layer is formed by metal organic chemical vapor deposition, the chamber pressure is 50mbar-500mbar, and the chamber temperature is 400°C-800°C; the thickness of the ohmic contact layer is 10nm-200nm.

7. The method for manufacturing a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein: The first strained layer is formed by metal organic chemical vapor deposition, the chamber pressure is 50mbar-500mbar, the chamber temperature is 400°C-800°C; the thickness of the first strained layer is 10nm-200nm; or, The second strained layer is formed by metal organic chemical vapor deposition, the chamber pressure is 50mbar-500mbar, and the growth temperature is 400°C-800°C; the thickness of the second strained layer is 10nm-200nm.

8. A vertical cavity surface emitting laser epitaxial structure, characterized in that: The vertical cavity surface emitting laser epitaxial structure comprises: A substrate, and a first buffer layer, an etching stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer, and a P-type DBR layer sequentially located on the substrate; The material of the corrosion stop layer includes silicon-doped (Al x Ga (1-x) ) y In z As n P m , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, and n < m; A first strain layer and a second strain layer are further formed between the ohmic contact layer and the second buffer layer. The materials of the first strain layer and the second strain layer both contain (Al x Ga (1-x) ) y In z As n P m Si a O b C c , where 0 < x < 1, 0 < y < 1, 0 < z < 1, 0 < n < 1, 0 < m < 1, 0 < a < 1, 0 < b < 1, 0 < c < 1, and y + z = 1, n + m = 1, a + b + c = 1, a > c > b. The contents of P and As in the first strain layer and the second strain layer are different from each other.

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