Light-emitting device and light-emitting apparatus

Abstract

The present invention discloses a light-emitting device and a light-emitting apparatus. The light-emitting device comprises: a substrate, an organic light-emitting layer, a first electrode layer, and a second electrode layer. The organic light-emitting layer, the first electrode layer, and the second electrode layer are stacked on the substrate, with the organic light-emitting layer located between the first and second electrode layers. The first electrode layer is translucent and translucent to light, while the second electrode layer is reflective. The first electrode layer includes a metal-doped layer, which covers the organic light-emitting layer. The metal-doped layer includes metallic silver and a metal-doping material. The metal-doping material is used to inhibit the aggregation of silver atoms in the metal-doped layer, thereby promoting uniform film formation of the metal-doped layer. This reduces the aggregation of the thin silver layer in the electrode and improves device reliability.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a light-emitting device and a light-emitting apparatus. Background Art

[0002] OLED (Organic Light Emitting Diode) light-emitting devices are devices that emit light through carrier injection and recombination when driven by an electric field. Displays or lighting products made using this light-emitting principle are called organic light-emitting displays or organic light-emitting lighting devices.

[0003] Currently, most OLED products use an ITO / Ag / ITO anode structure (i.e., ITO, Ag, and ITO layers stacked sequentially), along with a top-emission approach to maximize aperture ratio. This approach places high demands on screen packaging performance, and many manufacturers, unable to meet these requirements, resort to bottom-emission approaches. This requires the Ag layer in the ITO / Ag / ITO electrode to be sufficiently thin to achieve sufficient light output. However, thin Ag layers are unstable in high-temperature environments and are prone to aggregation, which can degrade screen performance and reduce product lifespan. Summary of the Invention

[0004] The present invention provides a light-emitting device and a light-emitting apparatus, so as to improve the aggregation phenomenon of a silver thin layer in an electrode and enhance the reliability of the device.

[0005] According to one aspect of the present invention, a light-emitting device is provided, comprising: a substrate, an organic light-emitting layer, a first electrode layer, and a second electrode layer; the organic light-emitting layer, the first electrode layer, and the second electrode layer are stacked on the substrate, the organic light-emitting layer is located between the first electrode layer and the second electrode layer, the first electrode layer produces a semi-reflective and semi-transmissive effect on light, and the second electrode layer produces a reflective effect on light; wherein, the first electrode layer comprises a metal-doped layer, the metal-doped layer covers the organic light-emitting layer; the metal-doped layer comprises metallic silver and a metal-doping material, the metal-doping material is used to inhibit the aggregation of silver atoms in the metal-doped layer, so as to promote uniform film formation of the metal-doped layer.

[0006] Optionally, the first electrode layer further includes a first transparent conductive layer; the first transparent conductive layer is located on a side of the metal-doped layer away from the organic light-emitting layer.

[0007] Optionally, the first electrode layer further includes a second transparent conductive layer; the second transparent conductive layer is located on a side of the metal-doped layer close to the organic light-emitting layer.

[0008] Optionally, in the metal doping layer, the ratio of the metal doping material to the metal silver is 20:1 to 1:20.

[0009] Optionally, the ratio of the metal doping material to the metallic silver is 5:1 to 1:5.

[0010] Optionally, the metal doping layer has a thickness of 15 nm to 25 nm.

[0011] Optionally, the metal doping material includes at least one of gold, copper, magnesium, nickel, aluminum, zinc and titanium.

[0012] Optionally, the light-emitting device includes at least one sub-pixel; the thickness of the organic light-emitting layer corresponding to the sub-pixel is the sum of a basic thickness and a compensation thickness;

[0013] The basic thickness of the organic light-emitting layer corresponding to the sub-pixel is m is the wave order, λ is the light-emitting wavelength of the organic light-emitting layer corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer corresponding to the sub-pixel; the compensation thickness of the organic light-emitting layer corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer.

[0014] Optionally, the light-emitting device includes at least one sub-pixel; the total thickness of the second transparent conductive layer and the organic light-emitting layer corresponding to the sub-pixel is the sum of the total base thickness and the total compensation thickness;

[0015] The total basic thickness of the second metal oxide layer and the organic light-emitting layer corresponding to the sub-pixel is m is the wave order, λ is the light-emitting wavelength of the organic light-emitting layer corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer corresponding to the sub-pixel;

[0016] The total compensation thickness of the second transparent conductive layer and the organic light-emitting layer corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer.

[0017] Optionally, the sub-pixel includes a red sub-pixel for emitting red light, a green sub-pixel for emitting green light, a blue sub-pixel for emitting blue light, or a white sub-pixel for emitting white light;

[0018] The thickness of the organic light-emitting layer corresponding to the red sub-pixel, the thickness of the organic light-emitting layer corresponding to the green sub-pixel, the thickness of the organic light-emitting layer corresponding to the blue sub-pixel, and the thickness of the organic light-emitting layer corresponding to the white sub-pixel are different from each other.

[0019] Optionally, a material of the first transparent conductive layer is one of ITO, IZO, AZO, GZO, ITZO, ZTO, IGO, graphene and silver nanowires.

[0020] According to another aspect of the present invention, a light-emitting device is provided, comprising the light-emitting device as described in the above aspect; wherein the light-emitting device further comprises an encapsulation layer; the encapsulation layer is located on a side of the second electrode layer away from the organic light-emitting layer and covers the second electrode layer; or, the encapsulation layer is located on a side of the first electrode layer away from the organic light-emitting layer and covers the first electrode layer.

[0021] The technical solution of an embodiment of the present invention comprises a light-emitting device including a substrate, an organic light-emitting layer, a first electrode layer, and a second electrode layer. The organic light-emitting layer, the first electrode layer, and the second electrode layer are stacked on the substrate, with the organic light-emitting layer located between the first electrode layer and the second electrode layer. The first electrode layer has a semi-reflective and semi-transmissive effect on light, while the second electrode layer has a reflective effect on light. The first electrode layer includes a metal-doped layer that covers the organic light-emitting layer. The metal-doped layer includes metallic silver and a metal-doping material. The metal-doping material is used to inhibit the aggregation of silver atoms in the metal-doped layer, thereby promoting uniform film formation of the metal-doped layer. This embodiment of the present invention thereby reduces the aggregation of the Ag thin layer in the electrode, improves device performance and reliability, and enhances the environmental reliability of the device.

[0022] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 is a schematic cross-sectional structural diagram of a light-emitting device provided by an embodiment of the present invention;

[0025] Figure 2 is a schematic cross-sectional structural diagram of another light-emitting device provided by an embodiment of the present invention;

[0026] Figure 3 is a schematic cross-sectional structural diagram of another light-emitting device provided by an embodiment of the present invention;

[0027] Figure 4is a schematic cross-sectional structural diagram of another light-emitting device provided by an embodiment of the present invention;

[0028] Figure 5 Schematic diagram of a light-emitting device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0030] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0031] Figure 1 Schematic diagram of the cross-sectional structure of a light emitting device provided by an embodiment of the present invention. Figure 1 The light-emitting device includes: a substrate 100, an organic light-emitting layer 130, a first electrode layer 110 and a second electrode layer 120; the organic light-emitting layer 130, the first electrode layer 110 and the second electrode layer 120 are stacked on the substrate 100, the organic light-emitting layer 130 is located between the first electrode layer 110 and the second electrode layer 120, the first electrode layer 110 produces a semi-reflective and semi-transmissive effect on light, and the second electrode layer 120 produces a reflective effect on light; wherein, the first electrode layer 110 includes a metal-doped layer 112, the metal-doped layer 112 covers the organic light-emitting layer 130, and the metal-doped layer 112 is in direct contact with the organic light-emitting layer 130; the metal-doped layer 112 includes metallic silver and a metal-doping material, and the metal-doping material is used to inhibit the aggregation of silver atoms in the metal-doped layer 112, so as to promote uniform film formation of the metal-doped layer 112.

[0032] Specifically, the light-emitting device may be an OLED light-emitting device. The substrate 100 supports the organic light-emitting layer 130, the first electrode layer 110, and the second electrode layer 120. The substrate 100 may be made of glass, PET (polyethylene terephthalate), or PI (polyimide). The thickness of the substrate 100 may be, but is not limited to, 0.5 mm to 1.5 mm. Figure 1 Here, for example, the first electrode layer 110 is disposed between the substrate 100 and the organic light-emitting layer 130, and the second electrode layer 120 is disposed on the side of the organic light-emitting layer 130 away from the first electrode layer 110, thereby realizing a bottom-emitting device. Of course, the second electrode layer 120 can also be disposed between the substrate 100 and the organic light-emitting layer 130, and the first electrode layer 110 is disposed on the side of the organic light-emitting layer 130 away from the second electrode layer 120, thereby realizing a top-emitting device. The first electrode layer 110 not only transmits but also reflects the light emitted by the organic light-emitting layer 130, and the second electrode layer 120 reflects the light emitted by the organic light-emitting layer 130.

[0033] The first electrode layer 110 includes a metal doping layer 112. At higher temperatures, silver atoms are easily aggregated due to the instability of metallic silver (Ag) itself. In this regard, in an embodiment of the present invention, the metal doping layer 112 is formed by depositing a mixture of metallic silver and a metal doping material, so that the metal doping material inhibits the aggregation of silver atoms, thereby preventing the aggregation of silver atoms, and further promoting the uniform film formation of the metal doping layer 112, thereby avoiding the aggregation of the metal doping layer 112. The embodiment of the present invention thus improves the performance of the device, improves the environmental reliability of the device, and suppresses the shrinkage of the light-emitting device and the screen in a high-temperature environment.

[0034] Among them, the structure of the second electrode layer 120 can be an ITO / Ag / ITO structure, but the thickness of the Ag layer therein is generally greater than the thickness of the metal doping layer 112 in the first electrode layer 110; the structure of the second electrode layer 120 can also include only a single Ag layer, and the thickness of the single Ag layer is also greater than the thickness of the metal doping layer 112 in the first electrode layer 110; this embodiment does not specifically limit the specific structure of the second electrode layer 120.

[0035] On the basis of the above embodiments, as an implementation mode of the present invention, Figure 2 is a schematic cross-sectional view of another light emitting device provided by an embodiment of the present invention, with reference to Figure 2 Optionally, the first electrode layer further includes a first transparent conductive layer 111 ; the first transparent conductive layer 111 is located on a side of the metal-doped layer 112 away from the organic light-emitting layer 130 .

[0036] Specifically, the first transparent conductive layer 111 makes the first electrode layer 110 flatter and supports the metal-doped layer 112. The material of the first transparent conductive layer 111 includes, but is not limited to, one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), ZTO (Zinc Tin Oxide), IGO (Indium Gallium Oxide), tin oxide (SnO2), zinc oxide (ZnO), graphene, and silver nanowires. The first transparent conductive layer 111 can be deposited by sputtering or evaporation.

[0037] In the embodiment of the present invention, considering that the metal-doped layer 112 is in direct contact with the organic light-emitting layer 130 and the metal-doped layer 112 is doped with a metal-doped material, and the metal-doped material has its own refractive index, the presence of the metal-doped layer 112 may affect the light emission of the organic light-emitting layer 130, and further affect the light emission of the light-emitting device.

[0038] In this regard, in an embodiment of the present invention, optionally, the light-emitting device includes at least one sub-pixel (that is, the light-emitting device includes one sub-pixel or multiple sub-pixels, or multiple sub-pixels arranged in an array), and the thickness of the organic light-emitting layer 130 corresponding to the sub-pixel is the sum of the basic thickness and the compensation thickness.

[0039] Specifically, because the first electrode layer 110 is a transflective electrode and the second electrode layer 120 is a reflective electrode, a microcavity effect is formed between the first electrode layer 110 and the second electrode layer 120. Consequently, the thickness of the organic light-emitting layer 130 is related to the light extraction efficiency of the light-emitting device. Furthermore, the presence of the metal-doped layer 112 also affects the light extraction efficiency of the light-emitting device. To address this issue, the thickness of the organic light-emitting layer 130 is set to the sum of a base thickness and a compensation thickness. The base thickness is used to accommodate the microcavity effect, while the compensation thickness is used to compensate for the optical effect of the metal-doped layer 112 on the light extraction efficiency of the light-emitting device. This improves the light extraction efficiency and color purity of the light-emitting device.

[0040] Optionally, the basic thickness of the organic light emitting layer 130 corresponding to the sub-pixel is Wherein, m is the wave series (ie, m is a positive integer), λ is the light-emitting wavelength of the organic light-emitting layer 130 corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer 130 corresponding to the sub-pixel; the compensation thickness of the organic light-emitting layer 130 corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer 112. That is, the thickness of the organic light emitting layer 130 corresponding to the sub-pixel

[0041] Example 1:

[0042] The metal doping material is magnesium, that is, the metal doping layer 112 is formed by mixing metal silver and metal magnesium and then depositing them; wherein the ratio of Mg to Ag is 1:4; in this regard, it has been experimentally verified that: ITO /

[0043] The shrinkage of the (Mg:Ag = 1:4) structure is 30 μm, while the shrinkage of the ITO / Ag structure of the same thickness at the same temperature is 80 μm, indicating that the technical solution of the embodiment of the present invention improves the reliability of the device. Furthermore, the voltage change of the ITO / (Mg:Ag = 1:4) structure is 0.3 V, while the voltage change of the ITO / Ag structure of the same thickness at the same temperature is 1.1 V, indicating that the first electrode layer 110 provided by the embodiment of the present invention has higher reliability.

[0044] at the same time, Assuming m=2, the refractive index n of the organic light-emitting layer 130 corresponding to the current sub-pixel is 1.8, and the emission wavelength λ of the organic light-emitting layer 130 corresponding to the current sub-pixel is 640 nm, so the thickness of the organic light-emitting layer 130 corresponding to the current sub-pixel is This can achieve a higher light output rate of the current sub-pixel.

[0045] Example 2:

[0046] The metal doping material is magnesium, meaning that the metal doping layer 112 is formed by depositing a mixture of silver and magnesium; the ratio of Mg to Ag is 3:1. Experimental verification has shown that the shrinkage of an ITO / (Mg:Ag=3:1) structure is 3μm, while an ITO / Ag structure of the same thickness shrinks to 80μm at the same temperature, demonstrating that the technical solution of the present embodiment improves device reliability. Furthermore, the voltage change of the ITO / (Mg:Ag=3:1) structure is 0.1V, while an ITO / Ag structure of the same thickness shrinks to 1.1V at the same temperature, demonstrating that the first electrode layer 110 provided by the present embodiment has higher reliability.

[0047] at the same time, Assuming m=1, the refractive index n of the organic light-emitting layer 130 corresponding to the current sub-pixel is 1.8, and the emission wavelength λ of the organic light-emitting layer 130 corresponding to the current sub-pixel is 640 nm, so the thickness of the organic light-emitting layer 130 corresponding to the current sub-pixel is

[0048] On the basis of the above embodiment, as another implementation of the present invention, Figure 3 is a schematic cross-sectional view of another light emitting device provided by an embodiment of the present invention, with reference to Figure 3Optionally, the first electrode layer 110 further includes a second transparent conductive layer 113 ; the second transparent conductive layer 113 is located on a side of the metal doping layer 112 close to the organic light emitting layer 130 . The material of the second transparent conductive layer 113 can be the same as that of the first metal oxide 111 .

[0049] Specifically, although the metal-doped layer 112 is located between the first transparent conductive layer 111 and the second transparent conductive layer 113, and the second transparent conductive layer 113 is in direct contact with the organic light-emitting layer 130, when the material of the second transparent conductive layer 113 is ITO, since the refractive index of the second transparent conductive layer 113 is basically the same as the refractive index of the organic light-emitting layer 130 and the second metal oxide layer also has high transmittance, the optical effect of the second transparent conductive layer 113 can be approximately regarded as the same as the optical effect of the organic light-emitting layer 130, and it is still equivalent to the metal-doped layer 112 being in direct contact with the organic light-emitting layer 130.

[0050] In this case, if the thickness of the organic light-emitting layer 130 needs to be set to improve the luminous efficiency of the light-emitting device and improve the color purity, the following calculation can be used:

[0051] The light emitting device includes at least one sub-pixel; the total thickness of the second transparent conductive layer 113 and the organic light emitting layer 130 corresponding to the sub-pixel is the sum of the total base thickness and the total compensation thickness; wherein the total base thickness of the second transparent conductive layer 113 and the organic light emitting layer 130 corresponding to the sub-pixel is m is the order of the wave, λ is the light-emitting wavelength of the organic light-emitting layer 130 corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer 130 corresponding to the sub-pixel;

[0052] The total compensation thickness of the second transparent conductive layer 113 and the organic light emitting layer 130 corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer.

[0053] After calculating the total thickness of the second transparent conductive layer 113 and the organic light-emitting layer 130 , the thickness of the second transparent conductive layer 113 is first obtained, so that the thickness of the organic light-emitting layer 130 can be obtained by subtracting the thickness of the second transparent conductive layer 113 from the total thickness of the second transparent conductive layer 113 and the organic light-emitting layer 130 .

[0054] In the above technical solution, optionally, the sub-pixels include a red sub-pixel for emitting red light, a green sub-pixel for emitting green light, a blue sub-pixel for emitting blue light, or a white sub-pixel for emitting white light; the thickness of the organic light-emitting layer 130 corresponding to the red sub-pixel, the thickness of the organic light-emitting layer 130 corresponding to the green sub-pixel, the thickness of the organic light-emitting layer 130 corresponding to the blue sub-pixel, and the thickness of the organic light-emitting layer 130 corresponding to the white sub-pixel are different from each other.

[0055] In the above technical solution, at higher temperatures, the metal doping material is less likely to aggregate than metallic silver. Optionally, the metal doping material includes at least one of Au (gold), Cu (copper), Yb (ytterbium), Mg (magnesium), Ni (nickel), Cr (chromium), Ti (titanium), Zr (zirconium), Al (aluminum), Ca (calcium), Mn (manganese), Zn (zinc), Eu (europium) and Ir (iridium). The technical solution of the embodiment of the present invention introduces different metal doping materials. Since the metal doping materials themselves have colors (such as yellow gold, yellow copper, etc.), the light-emitting device can be color-adjusted to display different colors, which is conducive to achieving screen color matching.

[0056] In the above technical solution, optionally, the thickness of the metal doping layer 112 is 15 nm to 25 nm to ensure good transflective and translucent performance of the first electrode layer 110 .

[0057] In the above technical solution, optionally, in the metal-doped layer 112, the ratio of the metal doping material to metallic silver is 20:1 to 1:20, so that the metal doping material inhibits the aggregation of silver atoms, thereby preventing the aggregation of silver atoms and promoting uniform film formation of the metal-doped layer 112. Exemplarily, in the metal-doped layer, the ratio of the metal doping material to metallic silver is 5:1 to 1:5.

[0058] An embodiment of the present invention further provides a light emitting device, Figure 4 is a schematic cross-sectional view of another light-emitting device provided by an embodiment of the present invention. Figure 5 is a schematic diagram of a light emitting device provided by an embodiment of the present invention, combined with Figures 1 to 5 The light-emitting device includes a light-emitting device according to any of the above technical solutions; wherein the light-emitting device further includes an encapsulation layer 140, and the encapsulation layer 140 is located on a side of the second electrode layer 120 away from the organic light-emitting layer 130 and covers the second electrode layer 120. Alternatively, the encapsulation layer 140 is located on a side of the first electrode layer 110 away from the organic light-emitting layer 130 and covers the first electrode layer 110. The light-emitting device and light-emitting device provided in the embodiments of the present invention both belong to the same inventive concept and can achieve the same technical effects, and repeated details will not be repeated.

[0059] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A light emitting device, characterized in that: include: a substrate, an organic light-emitting layer, a first electrode layer, and a second electrode layer; The organic light-emitting layer, the first electrode layer, and the second electrode layer are stacked on the substrate, the organic light-emitting layer is located between the first electrode layer and the second electrode layer, the first electrode layer produces a semi-reflective and semi-transmissive effect on light, and the second electrode layer produces a reflective effect on light; The first electrode layer includes a metal doping layer, which covers the organic light-emitting layer; the metal doping layer includes metallic silver and a metal doping material; the metal doping material is used to inhibit the aggregation of silver atoms in the metal doping layer, so as to promote uniform film formation of the metal doping layer; the first electrode layer is an anode; The light emitting device includes at least one sub-pixel; the thickness of the organic light emitting layer corresponding to the sub-pixel is the sum of the basic thickness and the compensation thickness; The basic thickness of the organic light-emitting layer corresponding to the sub-pixel is m is the wave order, λ is the light-emitting wavelength of the organic light-emitting layer corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer corresponding to the sub-pixel; The compensation thickness of the organic light-emitting layer corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer.

2. The light emitting device according to claim 1, wherein The first electrode layer further includes a first transparent conductive layer; The first transparent conductive layer is located on a side of the metal-doped layer away from the organic light-emitting layer.

3. The light emitting device according to claim 2, characterized in that The first electrode layer further includes a second transparent conductive layer; The second transparent conductive layer is located on a side of the metal-doped layer close to the organic light-emitting layer.

4. The light emitting device according to claim 1, wherein In the metal doping layer, the ratio of the metal doping material to the metal silver is 20:1 to 1:

20.

5. The light emitting device according to claim 1, wherein The thickness of the metal doping layer is 15 nm to 25 nm. The light emitting device according to claim 1 , wherein: The metal doping material includes at least one of gold, copper, magnesium, nickel, aluminum, zinc and titanium.

7. The light emitting device according to claim 3, characterized in that The light-emitting device includes at least one sub-pixel; the total thickness of the second transparent conductive layer and the organic light-emitting layer corresponding to the sub-pixel is the sum of the total base thickness and the total compensation thickness; The total basic thickness of the second transparent conductive layer and the organic light-emitting layer corresponding to the sub-pixel is m is the wave order, λ is the light-emitting wavelength of the organic light-emitting layer corresponding to the sub-pixel, and n is the refractive index of the organic light-emitting layer corresponding to the sub-pixel; The total compensation thickness of the second transparent conductive layer and the organic light-emitting layer corresponding to the sub-pixel is ω is the mass fraction of the metal doping material in the metal doping layer.

8. The light emitting device according to claim 1, wherein The sub-pixels include a red sub-pixel for emitting red light, a green sub-pixel for emitting green light, a blue sub-pixel for emitting blue light, or a white sub-pixel for emitting white light; The thickness of the organic light-emitting layer corresponding to the red sub-pixel, the thickness of the organic light-emitting layer corresponding to the green sub-pixel, the thickness of the organic light-emitting layer corresponding to the blue sub-pixel, and the thickness of the organic light-emitting layer corresponding to the white sub-pixel are different from each other.

9. A light emitting device, characterized in that: comprising the light emitting device according to any one of claims 1 to 8; The light-emitting device further includes an encapsulation layer; the encapsulation layer is located on a side of the second electrode layer away from the organic light-emitting layer and covers the second electrode layer; or the encapsulation layer is located on a side of the first electrode layer away from the organic light-emitting layer and covers the first electrode layer.

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