A gallium arsenide-based terahertz frequency doubling schottky diode and a preparation method thereof

Abstract

The application provides a gallium arsenide-based terahertz frequency-doubling Schottky diode and a preparation method thereof. The preparation method comprises the following steps: growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; and preparing a device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer. According to the application, the gallium arsenide polycrystalline thin film layer is directly grown on the diamond substrate, and the Schottky diode is prepared on the basis, the diamond substrate replaces the gallium arsenide substrate to serve as the structural support of the Schottky diode, the process flow is simple, the production cycle is short, the reliability is high, and the heat dissipation performance of the gallium arsenide-based terahertz frequency-doubling Schottky diode is improved.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of terahertz devices, in particular to a gallium arsenide-based terahertz frequency-doubling Schottky diode and a preparation method thereof. BACKGROUND

[0002] In the low end range of terahertz (THz) frequencies, a solid-state source is usually obtained by using a frequency-doubling method of a semiconductor device. The method is to double the millimeter wave to the THz frequency band through a nonlinear semiconductor device, and has the advantages of compact structure, easy adjustment, long service life, controllable waveform and normal temperature operation. At present, short-wavelength submillimeter wave and THz solid-state sources are mainly obtained by the frequency-doubling method. The use of a Schottky diode device to realize high-efficiency frequency doubling not only has a simple circuit structure and high frequency-doubling efficiency, but also has the advantages of high output power of an oscillation source, high frequency stability and low phase noise of a frequency-doubling amplifier chain. Meanwhile, the Schottky diode device can stably work in the entire millimeter wave and submillimeter wave frequency band of 30 GHz to 3000 GHz. At present, advanced varactor diodes (RAL and VDI research institutions produce) can work at 3.1 THz and have good continuous wave power and efficiency. Therefore, the high-efficiency frequency-doubling technology of the Schottky diode is very suitable for high-performance millimeter wave, submillimeter wave and THz systems, and is a THz frequency source technology with great research and application value. Due to extremely small junction capacitance and series resistance, high electron drift speed, and a planar GaAs Schottky diode has been widely used in the THz frequency band, and is a core solid-state electronic device in the field of THz technology.

[0003] For the THz frequency band, due to the high frequency band, the fundamental wave power input into the frequency doubler is limited, and in order to obtain greater output power, it is necessary to improve the frequency-doubling efficiency of the frequency doubler. Studies have shown that when the Schottky diode is used for frequency doubling, heat dissipation has a great influence on its efficiency. As the temperature rises, the efficiency of the Schottky frequency-doubling diode decreases. Therefore, it is necessary to reduce the working temperature of the frequency-doubling device, that is, to reduce the working temperature of the Schottky diode which plays a core nonlinear role. In order to improve heat dissipation, a new type of material with high thermal conductivity can be used. Diamond is called a new generation of wide-bandgap semiconductor, which is a wide-bandgap material and is the material with the highest known thermal conductivity. The thermal conductivity of diamond is as high as 120 W / cm·K, and generally reaches 20 W / cm·K, which is 4 times the thermal conductivity of SiC material and 14 times the thermal conductivity of GaN material. The use of diamond material in the preparation of a terahertz Schottky frequency-doubling diode can improve the heat dissipation performance of the Schottky diode frequency doubler and improve its frequency-doubling efficiency.

[0004] The prior art uses a bonding process to replace the diamond substrate to improve the heat dissipation performance. A Schottky diode is first prepared on a gallium arsenide substrate, a transition substrate is bonded to the front surface of the Schottky diode as a structural support, the gallium arsenide substrate is then removed by a thinning process or an etching process, and the diamond substrate is bonded to the back surface of the Schottky diode and the transition substrate is removed. The prior art needs multiple processes such as bonding the transition substrate, removing the gallium arsenide substrate, bonding the diamond substrate, and removing the transition substrate, and the process flow is complex and the production cycle is long. SUMMARY

[0005] Embodiments of the present application provide a gallium arsenide-based terahertz frequency doubling Schottky diode and a preparation method thereof to solve the problem of complex process flow in the prior art for preparing an improved heat dissipation type gallium arsenide-based terahertz frequency doubling Schottky diode.

[0006] In a first aspect, embodiments of the present application provide a preparation method of a gallium arsenide-based terahertz frequency doubling Schottky diode, comprising: growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; and preparing a device layer of a Schottky diode on the gallium arsenide polycrystalline thin film layer.

[0007] In a possible implementation manner, the growing of the gallium arsenide polycrystalline thin film layer on the diamond substrate comprises: depositing a gallium arsenide single crystal material on the diamond substrate by a physical vapor deposition method to obtain the gallium arsenide polycrystalline thin film layer.

[0008] In a possible implementation manner, the depositing of the gallium arsenide polycrystalline material on the diamond substrate by the physical vapor deposition method to obtain the gallium arsenide polycrystalline thin film layer comprises: grinding the gallium arsenide single crystal material into powder to prepare a gallium arsenide material target; and depositing the gallium arsenide material target on the diamond substrate by the physical vapor deposition method to obtain the gallium arsenide polycrystalline thin film layer.

[0009] In a possible implementation manner, the physical vapor deposition method is a magnetron sputtering.

[0010] In a possible implementation manner, after the preparing of the device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer, the method further comprises: reducing the thickness of the diamond substrate by a back surface thinning process.

[0011] In a possible implementation manner, the preparing of the device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer comprises: growing a heavily doped gallium arsenide layer on the gallium arsenide polycrystalline thin film layer; growing a low-doped gallium arsenide layer on the heavily doped gallium arsenide layer; and preparing the device layer of the Schottky diode on the low-doped gallium arsenide layer.

[0012] In a possible implementation manner, the doping concentration of the heavily doped gallium arsenide layer ranges from 1x1018 cm -3 to 9x10 18 cm -3 . The doping concentration of the low-doped gallium arsenide layer ranges from 1x10 16 cm -3 to 5x10 17 cm -3 .

[0013] In one possible implementation, the growth method of the heavily-doped gallium arsenide layer and the low-doped gallium arsenide layer is molecular beam epitaxy or metal organic vapor deposition.

[0014] In a second aspect, an embodiment of the present application provides a gallium arsenide-based terahertz frequency-doubled Schottky diode, which is obtained by the preparation method of the gallium arsenide-based terahertz frequency-doubled Schottky diode according to the first aspect of the present application.

[0015] In a third aspect, an embodiment of the present application provides a gallium arsenide-based terahertz frequency-doubled monolithic integrated circuit, which includes a Schottky diode obtained by the preparation method of the gallium arsenide-based terahertz frequency-doubled Schottky diode according to the first aspect of the present application.

[0016] The gallium arsenide-based terahertz frequency-doubled Schottky diode and the preparation method thereof provided by the embodiment of the present application include growing a gallium arsenide polycrystalline thin film layer on a diamond substrate, wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide. Device layers of the Schottky diode are prepared on the gallium arsenide polycrystalline thin film layer. The present application directly grows a gallium arsenide polycrystalline thin film layer on a diamond substrate, and then prepares a Schottky diode on this basis. The diamond substrate replaces the gallium arsenide substrate as the structural support of the Schottky diode, the process flow is simple, the production cycle is short, the reliability is high, and the heat dissipation performance of the gallium arsenide-based terahertz frequency-doubled Schottky diode is improved. At the same time, the existing technology uses bonding to bond the diamond and the gallium arsenide, which will generate thermal resistance, while the method provided by the embodiment of the present application is crystal growth of the gallium arsenide polycrystalline thin film layer 5, and the gallium arsenide polycrystalline thin film layer 5 directly contacts the diamond without a thermal resistance layer, so that the heat dissipation is better. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative labor.

[0018] Figure 1 is a preparation method flowchart of a gallium arsenide-based terahertz frequency-doubled Schottky diode with improved heat dissipation performance in the prior art;

[0019] Figure 2 This is a flowchart of a method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode according to an embodiment of the present invention;

[0020] Figure 3 This is a schematic diagram of the structure of a gallium arsenide-based terahertz frequency doubling Schottky diode provided in an embodiment of the present invention;

[0021] Figure 4 This is a schematic diagram of a planar structure of a gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit provided in an embodiment of the present invention;

[0022] Figure 5 This is a schematic cross-sectional view of a gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit provided in an embodiment of the present invention. Detailed Implementation

[0023] To enable those skilled in the art to better understand this solution, the technical solutions in the embodiments of this solution will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this solution, not all of them. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this solution.

[0024] The term "comprising" and any other variations thereof in the specification, claims, and accompanying drawings of this invention mean "including but not limited to," and are intended to cover a non-exclusive inclusion, not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order.

[0025] The implementation of the present invention will be described in detail below with reference to the accompanying drawings:

[0026] Schottky diodes, also known as metal-semiconductor contact diodes, surface barrier diodes, or Schottky barrier diodes, are based on the principle of a metal-semiconductor junction formed by the contact between a metal and a semiconductor. When a metal contacts a lightly doped semiconductor, the resulting barrier region is relatively wide, preventing electrons in the lightly doped semiconductor from tunneling across the barrier region. This type of metal-semiconductor contact is called a Schottky contact.

[0027] Using diamond materials in the fabrication of terahertz Schottky frequency multiplier diodes can improve the heat dissipation performance of Schottky diode frequency multipliers and increase their frequency multiplication efficiency. One existing technique deposits diamond on the surface of the Schottky diode as a passivation layer, using this diamond passivation layer to improve the heat dissipation performance. However, the passivation layer has a limited coverage area, which cannot maximize the heat dissipation performance of the diamond material. Another existing technique uses a bonding process to replace the diamond substrate to improve the heat dissipation performance of the Schottky diode.

[0028] Figure 1 This is a flowchart illustrating a method for fabricating a gallium arsenide-based terahertz frequency-doubled Schottky diode with improved heat dissipation performance in the prior art. (Refer to...) Figure 1 This method uses a bonding process to replace the diamond substrate to improve heat dissipation performance. The method includes:

[0029] A gallium arsenide (GaAs)-based Schottky diode device layer 2 is fabricated on a gallium arsenide (GaAs) substrate 1. A transition substrate 3 is bonded to the front side of the Schottky diode as a structural support. The GaAs substrate 1 is removed by a thinning or etching process. A diamond substrate 4 is bonded to the back side of the Schottky diode. The transition substrate 3 is then removed. Existing techniques require multiple processes, including bonding the transition substrate 3, removing the GaAs substrate 1, bonding the diamond substrate 4, and removing the transition substrate 3, resulting in a complex process flow and a long production cycle.

[0030] Figure 2 This is a flowchart illustrating a method for fabricating a gallium arsenide-based terahertz frequency-doubling Schottky diode, as provided in an embodiment of the present invention. (Refer to...) Figure 2 The method includes:

[0031] In step S1, a gallium arsenide polycrystalline thin film layer 5 is grown on the diamond substrate 4. The gallium arsenide polycrystalline thin film layer 5 is a semi-insulating gallium arsenide.

[0032] Gallium arsenide (GaAs) is a semiconductor material belonging to the III-V group of compounds. For example, semi-insulating gallium arsenide has a resistivity greater than 1 × 10^7 Ω·cm.

[0033] In one possible implementation, growing a gallium arsenide polycrystalline thin film layer 5 on a diamond substrate includes: depositing gallium arsenide single crystal material on a diamond substrate 4 by physical vapor deposition to obtain the gallium arsenide polycrystalline thin film layer 5.

[0034] Physical vapor deposition (PVD) is a technique that uses physical methods under vacuum conditions to vaporize the surface of a material source into gaseous atoms or molecules, or ionize them into ions, and then deposit a thin film on the surface of a substrate. Under vacuum conditions, single-crystal gallium arsenide is deposited on a diamond substrate 4 to form a polycrystalline gallium arsenide thin film layer 5.

[0035] In one possible implementation, gallium arsenide polycrystalline material is deposited on a diamond substrate 4 using physical vapor deposition to obtain a gallium arsenide polycrystalline thin film layer 5, including: grinding gallium arsenide single crystal material into powder to prepare a gallium arsenide material target; and depositing the gallium arsenide material target on the diamond substrate 4 using physical vapor deposition to obtain the gallium arsenide polycrystalline thin film layer 5.

[0036] In one possible implementation, the physical vapor deposition method is magnetron sputtering. Magnetron sputtering is a physical vapor deposition method. Magnetron sputtering utilizes the characteristic that charged particles, accelerated in an electric field, possess a certain kinetic energy. Charged ions bombard the target material, sputtering the target atoms so that they move along a certain direction to the substrate and deposit a film on the substrate.

[0037] In step S2, the device layer of the Schottky diode is fabricated on the gallium arsenide polycrystalline thin film layer 5.

[0038] In one possible implementation, after fabricating the device layer 2 of the Schottky diode on the gallium arsenide polycrystalline thin film layer 5, the process further includes reducing the thickness of the diamond substrate 4 through a back-side thinning process. For example, the thickness of the diamond substrate after back-side thinning ranges from 5 micrometers to 100 micrometers.

[0039] The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode provided in this embodiment of the invention reduces the thickness of the diamond substrate 4 through a back-side thinning process. The reduced thickness of the diamond substrate 4 increases the heat dissipation efficiency and improves the heat dissipation effect of the Schottky diode.

[0040] In one possible implementation, fabricating the device layer of a Schottky diode on a gallium arsenide polycrystalline thin film layer 5 includes: growing a heavily doped gallium arsenide layer 21 on the gallium arsenide polycrystalline thin film layer 5; growing a lightly doped gallium arsenide layer 22 on the heavily doped gallium arsenide layer 21; and fabricating the device layer 2 of the Schottky diode on the lightly doped gallium arsenide layer 22.

[0041] For example, a single-crystal heavily doped gallium arsenide layer 21 and a lightly doped gallium arsenide layer 22 are grown on a gallium arsenide polycrystalline thin film layer 5 using a chemical vapor deposition (CVD) process. A Schottky diode is then fabricated on a diamond substrate 4, on which the gallium arsenide polycrystalline thin film layer 5, the heavily doped gallium arsenide layer 21, and the lightly doped gallium arsenide layer 22 have been grown, using a chip fabrication process. For example, the device layer 2 of the Schottky diode includes a heavily doped gallium arsenide layer 21, a lightly doped gallium arsenide layer 22, a cathode ohmic contact metal layer 23, a Schottky contact metal layer 24, an anode ohmic contact metal layer 25, an air bridge metal layer 26, and a passivation layer 27.

[0042] Figure 3This is a schematic diagram of the structure of a gallium arsenide-based terahertz frequency doubling Schottky diode provided in an embodiment of the present invention; see reference. Figure 3 The Schottky diode includes: a diamond substrate 4, a gallium arsenide polycrystalline thin film layer 5, a heavily doped gallium arsenide layer 21, a lightly doped gallium arsenide layer 22, a cathode ohmic contact metal layer 23, a Schottky contact metal layer 24, an anode ohmic contact metal layer 25, an air bridge metal layer 26, and a passivation layer 27.

[0043] A diamond substrate 4 is located at the bottom of the Schottky diode, serving as its support structure. A gallium arsenide polycrystalline thin film layer 5 is disposed on the surface of the diamond substrate 4. A heavily doped gallium arsenide layer 21 is disposed on the surface of the gallium arsenide polycrystalline thin film layer 5. A lightly doped gallium arsenide layer 22 is disposed on the surface of the heavily doped gallium arsenide layer 21. The gallium arsenide polycrystalline thin film layer 5, the heavily doped gallium arsenide layer 21, and the lightly doped gallium arsenide layer 22 are etched into separate, non-connected left and right portions. The left portion of the heavily doped gallium arsenide layer 21 is the first heavily doped gallium arsenide layer, and the right portion is the second heavily doped gallium arsenide layer. The left portion of the lightly doped gallium arsenide layer 22 is the first lightly doped gallium arsenide layer, and the right portion is the second lightly doped gallium arsenide layer. The left side of the first lightly doped gallium arsenide layer is etched, exposing the left surface of the first heavily doped gallium arsenide layer. The right side of the second lightly doped gallium arsenide layer is etched, exposing the right surface of the second heavily doped gallium arsenide layer. A cathode ohmic contact metal layer 23 is disposed on the left side surface of the first heavily doped gallium arsenide layer. A Schottky contact metal layer 24 is disposed on the surface of the first lightly doped gallium arsenide layer. An anode ohmic contact metal layer 25 is disposed on the right side surface of the second heavily doped gallium arsenide layer. An air bridge metal layer 26 connects the Schottky contact metal layer 24 and the anode ohmic contact metal layer 25. A passivation layer 27 is disposed on the surface of the lightly doped gallium arsenide layer 22 in the area not covered by a metal layer.

[0044] For example, the material of the Schottky contact metal layer 24 is titanium platinum. That is, the Schottky contact metal layer 24 consists of a titanium layer, a platinum layer, and a gold layer from bottom to top.

[0045] For example, the materials of the anode ohmic contact metal layer 25, the cathode ohmic contact metal layer 23, and the air bridge metal layer 26 are nickel-gold-germanium-nickel-gold. That is, the anode ohmic contact metal layer 25, the cathode ohmic contact metal layer 23, and the air bridge metal layer 26 are, from bottom to top, a nickel layer, a gold layer, a germanium layer, a nickel layer, and a gold layer.

[0046] In one possible implementation, the doping concentration of the heavily doped gallium arsenide layer 21 ranges from 1 × 10⁻⁶. 18 cm -3 Up to 9×10 18 cm -3 The doping concentration of the lightly doped gallium arsenide layer 22 ranges from 1 × 10⁻⁶. 16 cm -3 Up to 5×1017 cm -3 .

[0047] In one possible implementation, the heavily doped gallium arsenide layer 21 and the lightly doped gallium arsenide layer 22 are grown by molecular beam epitaxy or metal-organic vapor deposition.

[0048] The method for fabricating a gallium arsenide-based terahertz frequency-doubled Schottky diode provided in this invention involves directly growing a gallium arsenide polycrystalline thin film layer 5 on a diamond substrate 4, and then fabricating the Schottky diode on this basis. The diamond substrate 4 replaces the gallium arsenide substrate 1 as the structural support for the Schottky diode. This method features a simple process, short production cycle, high reliability, improved heat dissipation performance, and increased frequency doubling efficiency of the gallium arsenide-based terahertz frequency-doubled Schottky diode. Furthermore, existing technologies using bonding to attach diamond and gallium arsenide introduce thermal resistance, while the method provided in this invention involves crystal growth of the gallium arsenide polycrystalline thin film layer 5, resulting in direct contact between the gallium arsenide polycrystalline thin film layer 5 and diamond without a thermal resistance layer, thus providing better heat dissipation.

[0049] This invention provides a gallium arsenide-based terahertz frequency doubling Schottky diode, which is obtained by the preparation method of the gallium arsenide-based terahertz frequency doubling Schottky diode provided in this invention, and has the beneficial effects of the preparation method of the gallium arsenide-based terahertz frequency doubling Schottky diode provided in this invention.

[0050] Figure 4 This is a schematic diagram of a planar structure of a gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit provided in an embodiment of the present invention; Figure 5 This is a schematic cross-sectional view of a gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit provided in an embodiment of the present invention. (Refer to...) Figure 4 and Figure 5 :

[0051] This invention provides a gallium arsenide-based terahertz frequency doubling monolithic integrated circuit. The monolithic integrated circuit includes a Schottky diode. The Schottky diode is obtained by the fabrication method of the gallium arsenide-based terahertz frequency doubling Schottky diode provided in this invention, and possesses the beneficial effects of the fabrication method provided in this invention.

[0052] For example, a gallium arsenide-based terahertz frequency multiplier monolithic integrated circuit includes Schottky diodes and peripheral circuitry 5. For example, the gallium arsenide-based terahertz frequency multiplier monolithic integrated circuit includes two sets of Schottky diodes. Each set of Schottky diodes is connected in series in the same direction. For example, each set contains four Schottky diodes.

[0053] For example, the substrate of the aforementioned monolithic integrated circuit is a diamond substrate 4. For example, firstly, a device layer 2 of a Schottky diode is fabricated on the diamond substrate 4 using the method for fabricating a gallium arsenide-based terahertz frequency-doubling Schottky diode provided in this embodiment of the invention; then, peripheral circuitry 5 is fabricated on the diamond substrate 4. For example, peripheral circuitry 5 includes a filter and a matching circuit. For example, the matching circuit is a microstrip line.

[0054] The present invention provides a gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit, which uses a diamond substrate as the substrate of the monolithic integrated circuit, and can effectively improve the heat dissipation of the frequency multiplication circuit and improve the frequency multiplication efficiency of the frequency multiplication circuit.

[0055] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode, characterized in that, include: A gallium arsenide polycrystalline thin film layer is grown on a diamond substrate; wherein the gallium arsenide polycrystalline thin film layer is semi-insulating gallium arsenide; A device layer for a Schottky diode is fabricated on the gallium arsenide polycrystalline thin film layer; The device layer for fabricating a Schottky diode on the gallium arsenide polycrystalline thin film layer includes: growing a single-crystal heavily doped gallium arsenide layer on the gallium arsenide polycrystalline thin film layer by chemical vapor phase epitaxy; growing a single-crystal lightly doped gallium arsenide layer on the heavily doped gallium arsenide layer; and fabricating the device layer of a Schottky diode on the lightly doped gallium arsenide layer.

2. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 1, characterized in that, The process of growing a gallium arsenide polycrystalline thin film layer on a diamond substrate includes: Gallium arsenide single crystal material is deposited on a diamond substrate by physical vapor deposition to obtain a gallium arsenide polycrystalline thin film layer.

3. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 2, characterized in that, The method of depositing gallium arsenide polycrystalline material onto a diamond substrate using physical vapor deposition to obtain a gallium arsenide polycrystalline thin film layer includes: Gallium arsenide single crystal material is ground into powder to prepare gallium arsenide material target material; Gallium arsenide (GaAs) target material is deposited on a diamond substrate using physical vapor deposition (PVD) to obtain a polycrystalline GaAs thin film.

4. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 3, characterized in that, The physical vapor deposition method is magnetron sputtering.

5. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 1, characterized in that, After fabricating the device layer of the Schottky diode on the gallium arsenide polycrystalline thin film layer, the process further includes: The thickness of the diamond substrate is reduced by a back-side thinning process.

6. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 1, characterized in that, The doping concentration range of the heavily doped gallium arsenide layer is 1×10⁻⁶. 18 cm -3 Up to 9×10 18 cm -3 The doping concentration range of the low-doped gallium arsenide layer is 1×10⁻⁶. 16 cm -3 Up to 5×10 17 cm -3 .

7. The method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in claim 6, characterized in that, The growth methods for the heavily doped gallium arsenide layer and the lightly doped gallium arsenide layer are molecular beam epitaxy or metal-organic vapor deposition.

8. A gallium arsenide-based terahertz frequency doubling Schottky diode, characterized in that, The method described in any one of claims 1 to 7 is used to prepare a gallium arsenide-based terahertz frequency doubling Schottky diode.

9. A gallium arsenide-based terahertz frequency multiplication monolithic integrated circuit, characterized in that, The monolithic integrated circuit includes a Schottky diode, which is obtained by the method for fabricating a gallium arsenide-based terahertz frequency doubling Schottky diode as described in any one of claims 1 to 7.

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