Half-Cutting Packaging Method and Production Method of Semiconductor Devices

Abstract

The present invention discloses a half-cut packaging method and a production method for a semiconductor device. A first chip and a second chip separated from each other are mounted on a substrate; a light-shielding adhesive is scribed at a position between the first chip and the second chip on the substrate to obtain a light-shielding adhesive layer; a first injection molding is performed on the substrate through a transparent adhesive material to obtain a first package covering the first chip, the second chip, and the light-shielding adhesive layer; the first package is half-cut to the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip; a second injection molding is performed on the unit packages through an outer encapsulation adhesive material to obtain a second package covering the two unit packages. The present invention uses an opaque light-shielding adhesive layer to judge the position reached by half-cutting, which can effectively improve the recognition rate of judging the half-cut position, and thus can effectively improve the half-cut accuracy. The light-shielding adhesive layer is arranged on the substrate, which can reduce the probability of the substrate being cut during half-cutting.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and particularly relates to a semi-cut packaging method and a production method for semiconductor devices. Background Art

[0002] A semiconductor device is an electronic component, usually including a semiconductor chip, a substrate, and a package body. The substrate is also called a lead frame. After the semiconductor chip is installed on the substrate by welding or other means and electrically connected to the substrate, a package body is formed outside the semiconductor chip and the substrate by injection molding, thereby obtaining a packaged semiconductor device.

[0003] For some semiconductor devices, after the first injection molding is completed, it is necessary to first semi-cut the package body obtained from the first injection molding, and then perform a second injection molding on the divided package body to obtain the required semiconductor device. In the related art, when performing semi-cutting, it is necessary to first set a depth, and then semi-cut the package body obtained from the first injection molding according to this depth. During the semi-cutting process, it is easy to cut into the substrate. The cut substrate has low reliability and is prone to cracking, ultimately resulting in a decline in the performance of the obtained semiconductor device. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. For this purpose, the present invention provides a semi-cut packaging method and a production method for semiconductor devices, with high semi-cutting accuracy and capable of improving the performance of semiconductor devices.

[0005] The first aspect embodiment of the present invention provides a semi-cut packaging method for semiconductor devices, including:

[0006] Installing a first chip and a second chip separated from each other on a substrate;

[0007] Scratching a light-shielding adhesive at a position between the first chip and the second chip on the substrate to obtain a light-shielding adhesive layer;

[0008] Performing a first injection molding on the substrate with a transparent adhesive material to obtain a first package body covering the first chip, the second chip, and the light-shielding adhesive layer;

[0009] Semi-cutting the first package body to the light-shielding adhesive layer to obtain two unit package bodies respectively covering the first chip and the second chip;

[0010] Performing a second injection molding on the unit package body with an outer encapsulation adhesive material to obtain a second package body covering the two unit package bodies.

[0011] According to the above embodiments of the present invention, there are at least the following beneficial effects: By scribing a light-shielding adhesive on the substrate before the first injection molding, and the light-shielding adhesive layer is located between the first chip and the second chip, the first package obtained by the first injection molding is half-cut with the light-shielding adhesive layer as a reference. When half-cutting, the first package is cut into until the light-shielding adhesive layer. By using the opaque light-shielding adhesive layer to judge the position reached by the half-cutting, the recognition rate for judging the half-cutting position can be effectively improved, and then the half-cutting accuracy can be effectively improved. In addition, due to the light-shielding adhesive layer with a certain thickness being provided on the substrate, during the half-cutting process, the tolerance rate for the cut-in depth is high, which can significantly reduce the probability of the substrate being cut into during half-cutting, thereby effectively improving the reliability of the substrate. The substrate is not prone to problems such as cracking, and further improves the performance of the semiconductor device obtained by packaging.

[0012] According to some embodiments of the first aspect of the present invention, the first package is half-cut to the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip, including:

[0013] Measure the half-cut distance between the cutting tool and the upper surface of the light-shielding adhesive layer;

[0014] According to the half-cut distance, the first package is half-cut to the upper surface of the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip.

[0015] According to some embodiments of the first aspect of the present invention, according to the half-cut distance, the first package is half-cut to the upper surface of the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip, including:

[0016] Set the cut-in depth to be less than the thickness of the light-shielding adhesive layer;

[0017] Calculate the sum of the half-cut distance and the cut-in depth to obtain the half-cut depth;

[0018] According to the half-cut depth, the first package is half-cut to the inside of the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip.

[0019] According to some embodiments of the first aspect of the present invention, after the first package is half-cut to the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip, it further includes:

[0020] Detect the appearance of the half-cut product;

[0021] When the light-shielding adhesive layer in the half-cut product completely disappears, send the half-cut product for repair.

[0022] According to some embodiments of the first aspect of the present invention, there are intervals formed between the light-shielding adhesive layer and the first chip and the second chip respectively.

[0023] According to some embodiments of the first aspect of the present invention, a light-shielding adhesive is scribed at a position between the first chip and the second chip on a substrate to obtain a light-shielding adhesive layer, including:

[0024] A black light-shielding adhesive is scribed at a position between the first chip and the second chip on the substrate to obtain a black light-shielding adhesive layer.

[0025] According to some embodiments of the first aspect of the present invention, the unit package is secondarily injection-molded with an outer encapsulating material to obtain a second package covering the two unit packages, including:

[0026] The unit package is secondarily injection-molded with a black outer encapsulating material to obtain a black second package covering the two unit packages.

[0027] According to some embodiments of the first aspect of the present invention, the unit package is secondarily injection-molded with a black outer encapsulating material to obtain a black second package covering the two unit packages, including:

[0028] The unit package is placed into a mold, and the mold is provided with a punch for respectively abutting against the top surfaces of the two unit packages;

[0029] The mold is secondarily injection-molded with a black outer encapsulating material to obtain a black second package covering the two unit packages, and the second package is provided with a window for communicating the unit package with the external environment.

[0030] According to some embodiments of the first aspect of the present invention, the first chip and the second chip separated from each other are mounted on a substrate, including:

[0031] The first chip and the second chip are respectively mounted on the substrate through silver paste;

[0032] The terminals of the first chip and the terminals of the second chip are respectively connected to corresponding conductive lines in the substrate through leads

[0033] An embodiment of the second aspect of the present invention provides a method for manufacturing a semiconductor device, including the half-cut packaging method of the semiconductor device in the above embodiment of the first aspect.

[0034] According to the above embodiments of the present invention, there are at least the following beneficial effects: By scribing a light-shielding adhesive on the substrate before the first injection molding, and the light-shielding adhesive layer is located between the first chip and the second chip, the first package obtained by the first injection molding is semi-cut with the light-shielding adhesive layer as a reference. When semi-cutting, the first package is cut into until the light-shielding adhesive layer. By using the opaque light-shielding adhesive layer to judge the position reached by the semi-cutting, the recognition rate of judging the semi-cutting position can be effectively improved, and then the semi-cutting accuracy can be effectively improved. In addition, due to the light-shielding adhesive layer with a certain thickness being provided on the substrate, during the semi-cutting process, the tolerance rate for the cut-in depth is high, which can significantly reduce the probability of the substrate being cut into during semi-cutting, thereby effectively improving the reliability of the substrate. The substrate is not likely to crack and other problems, and then the performance of the semiconductor device obtained by packaging is improved.

[0035] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The above and / or additional aspects and advantages of the present invention will become apparent and be readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0037] Figure 1 is a schematic diagram of the main steps of the semi-cut packaging method of the semiconductor device according to the embodiment of the present invention;

[0038] Figure 2 is Figure 1 the internal structure schematic diagram of the first semiconductor device semi-finished product corresponding to step S100 in

[0039] Figure 3 is Figure 1 the internal structure schematic diagram of the second semiconductor device semi-finished product corresponding to step S200 in

[0040] Figure 4 is Figure 1 the internal structure schematic diagram of the third semiconductor device semi-finished product corresponding to step S300 in

[0041] Figure 5 is Figure 1 the internal structure schematic diagram of the fourth semiconductor device semi-finished product corresponding to step S400 in

[0042] Figure 6 is Figure 1 the internal structure schematic diagram of the semiconductor device finished product corresponding to step S500 in

[0043] Figure 7 is Figure 1 the top view structure schematic diagram of the second semiconductor device semi-finished product corresponding to step S200 in

[0044] Reference numerals:

[0045] Substrate 600, light-shielding adhesive layer 610;

[0046] First chip 710, second chip 720;

[0047] First package 800, unit package 810;

[0048] Second package 900. Detailed implementation manners

[0049] In the description of the present invention, unless otherwise clearly defined, terms such as "arrangement", "installation", and "connection" shall be understood in a broad sense. Those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific content of the technical solution. In the description of the present invention, the meaning of "several" is one or more, the meaning of "multiple" is more than two, understandings such as "greater than", "less than", and "exceeding" do not include the present number, and understandings such as "above", "below", and "within" include the present number. In addition, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise stated, the meaning of "multiple" is two or more.

[0050] A semiconductor device mainly includes a semiconductor chip, a substrate, and a package. The substrate is also called a lead frame. The packaging process of a semiconductor device is as follows: after the semiconductor chip is mounted on the substrate by means such as soldering, the terminals of the semiconductor chip are conductively connected to the corresponding positions of the substrate by means of wire connection or direct connection, and then a package is formed outside the semiconductor chip and the substrate by means of injection molding, so as to obtain a packaged semiconductor device.

[0051] For some semiconductor devices, such as a proximity sensor (P-sensor), it is necessary to mount a light-emitting chip and a sensing chip on the substrate, and then place the assembled semi-finished product into a corresponding mold for injection molding. After the first injection molding is completed, it is necessary to first perform a half-cut on the package obtained from the first injection molding so that the package obtained from the first injection molding is divided into two plastic structures respectively covering the light-emitting chip and the sensing chip, and then perform a second injection molding on the divided package to obtain the required proximity sensor. In the related art, during the half-cutting process, a depth is first set, and then the package obtained from the first injection molding is half-cut according to this depth. During the half-cutting process, it is easy to cut into the substrate. The cut substrate has low reliability and is prone to cracking, ultimately resulting in a decline in the performance of the obtained semiconductor device, and even causing the semiconductor device to be scrapped.

[0052] The following refers to Figures 1 to 7, a half-cut packaging method and a production method for a semiconductor device of the present invention are described. By using a light-shielding adhesive layer to identify the half-cut position, it is convenient to identify, thereby improving the half-cut accuracy and avoiding cutting into the substrate.

[0053] Reference Figures 1 to 7 As shown, the half-cut packaging method for a semiconductor device according to an embodiment of the first aspect of the present invention at least includes the following steps:

[0054] S100: Mount the mutually separated first chip 710 and second chip 720 on the substrate 600. There is a gap formed between the first chip 710 and the second chip 720.

[0055] S200: Draw a light-shielding adhesive at a position between the first chip 710 and the second chip 720 on the substrate 600 to obtain a light-shielding adhesive layer 610. The light-shielding adhesive layer 610 is used to separate the positions of the first chip 710 and the second chip 720.

[0056] S300: Perform the first injection molding on the substrate 600 through a transparent adhesive material to obtain a first package body 800 covering the first chip 710, the second chip 720, and the light-shielding adhesive layer 610.

[0057] S400: Half-cut the first package body 800 to the light-shielding adhesive layer 610 to obtain two unit package bodies 810 respectively covering the first chip 710 and the second chip 720.

[0058] S500: Perform the second injection molding on the unit package body 810 through an outer encapsulation adhesive material to obtain a second package body 900 covering the two unit package bodies 810.

[0059] The first semiconductor device semi-finished product corresponding to step S100 is as Figure 2 shown. The second semiconductor device semi-finished product corresponding to step S200 is as Figure 3 shown. The third semiconductor device semi-finished product corresponding to step S300 is as Figure 4 shown. The fourth semiconductor device semi-finished product corresponding to step S400 is as Figure 5 shown. The semiconductor device finished product corresponding to step S500 is as Figure 6 shown.

[0060] By scribing a light-shielding adhesive on the substrate 600 before the first injection molding, and the light-shielding adhesive layer 610 is located between the first chip 710 and the second chip 720, the first package 800 obtained from the first injection molding is semi-cut with the light-shielding adhesive layer 610 as a reference. When semi-cutting, it cuts into the first package 800 to the light-shielding adhesive layer 610. By using the opaque light-shielding adhesive layer 610 to judge the position reached by the semi-cutting, it can effectively improve the recognition of judging the semi-cutting position, and then can effectively improve the semi-cutting accuracy. In addition, because the light-shielding adhesive layer 610 with a certain thickness is arranged on the substrate 600, during the semi-cutting process, the tolerance rate for the cut depth is high, which can significantly reduce the probability of the substrate 600 being cut during semi-cutting, thereby effectively improving the reliability of the substrate 600. The substrate 600 is not likely to crack and other problems, and then improves the performance of the semiconductor device obtained by packaging.

[0061] It can be understood that referring to Figure 5 as shown, in step S400, the first package 800 is semi-cut to the light-shielding adhesive layer 610 to obtain two unit packages 810 respectively covering the first chip 710 and the second chip 720, including:

[0062] S410. Measure the semi-cutting distance between the cutting tool and the upper surface of the light-shielding adhesive layer 610;

[0063] S420. Semi-cut the first package 800 to the upper surface of the light-shielding adhesive layer 610 according to the semi-cutting distance to obtain two unit packages 810 respectively covering the first chip 710 and the second chip 720.

[0064] Taking the light-shielding adhesive layer 610 as a measurement reference, measure the position between the cutting tool and the light-shielding adhesive layer 610 to obtain the semi-cutting distance. The first package 800 is semi-cut by a device such as a laser cutting tool, and the first package 800 is cut to the upper surface of the light-shielding adhesive layer 610. Since the light-shielding adhesive layer 610 is arranged on the substrate 600 to form a protection effect, even if an error is formed due to certain factors during the semi-cutting process and the actual semi-cutting distance is greater than the measured distance, the light-shielding adhesive with a certain thickness can effectively reduce the probability of cutting into the substrate 600 during the semi-cutting process.

[0065] It can be understood that in step S420, the first package 800 is semi-cut to the upper surface of the light-shielding adhesive layer 610 according to the semi-cutting distance to obtain two unit packages 810 respectively covering the first chip 710 and the second chip 720, including:

[0066] S421. Set the cutting depth to be less than the thickness of the light-shielding adhesive layer 610;

[0067] S422. Calculate the sum of the semi-cutting distance and the cutting depth to obtain the semi-cutting depth;

[0068] S423. Half - cut the first package 800 to the inside of the light - shielding adhesive layer 610 according to the half - cut depth, obtaining two unit packages 810 respectively covering the first chip 710 and the second chip 720.

[0069] In the embodiment of the present invention, the function of half - cutting is to cut off part of the structure of the first package 800 between the first chip 710 and the second chip 720. By setting the cutting - in depth to be less than the thickness of the light - shielding adhesive layer 610, after calculating the sum of the half - cut distance and the cutting - in depth to obtain the half - cut depth, and then half - cutting the first package 800 with the half - cut depth, it can be ensured that when the first package 800 is half - cut, it cuts into the inside of the light - shielding adhesive layer 610, effectively avoiding the remaining transparent adhesive layer above the light - shielding adhesive layer 610, thus ensuring a complete half - cut effect on the first package 800. In addition, when the outer encapsulation material uses a light - shielding adhesive material, after the second injection molding, since the first package 800 on the light - shielding adhesive layer 610 is completely removed, the outer encapsulation colloid can effectively fill the space between the two unit packages 810. The cured second package 900 and the remaining light - shielding adhesive layer 610 can form a reliable light - shielding isolation structure. When producing a distance sensor, the first chip 710 and the second chip 720 are respectively a light - emitting chip and a sensing chip. The light - shielding isolation structure between the two unit packages 810 can improve the working performance of the distance sensor, avoid light crosstalk inside the distance sensor, and further improve the working reliability of the first chip 710 and the second chip 720.

[0070] It can be understood that after step S400, after half - cutting the first package 800 to the light - shielding adhesive layer 610 to obtain two unit packages 810 respectively covering the first chip 710 and the second chip 720, it further includes:

[0071] S410. Detect the appearance of the half - cut product;

[0072] S420. When the light - shielding adhesive layer 610 in the half - cut product completely disappears, send the half - cut product for rework;

[0073] S430. When there is residue of the light - shielding adhesive layer 610 in the half - cut product, enter step S500.

[0074] When a failure occurs, during the half - cutting process, the light - shielding adhesive layer 610 may be cut off. After the half - cutting is completed, the appearance of the half - cut product is detected to determine whether there is still residue of the light - shielding adhesive layer 610. When the light - shielding adhesive layer 610 completely disappears, the substrate 600 may be damaged by the half - cutting process. Therefore, sending the corresponding half - cut product for rework inspection can avoid defective products from entering the second injection molding process step, effectively improving the yield rate.

[0075] It can be understood that there are intervals between the light-shielding adhesive layer 610 and the first chip 710 and the second chip 720 respectively. The first chip 710 and the second chip 720 are respectively arranged on opposite sides of the light-shielding adhesive layer 610. Setting the width and length of the half-cut to match the width and length of the light-shielding adhesive layer 610 can effectively avoid damaging the first chip 710 or the second chip 720 during the half-cut processing operation.

[0076] It can be understood that step S200, scribing a light-shielding adhesive at a position between the first chip 710 and the second chip 720 on the substrate 600 to obtain the light-shielding adhesive layer 610, includes:

[0077] S210, scribing a black light-shielding adhesive at a position between the first chip 710 and the second chip 720 on the substrate 600 to obtain the black light-shielding adhesive layer 610.

[0078] Since the substrate 600 is provided with a hollow structure for forming corresponding circuit structures to achieve corresponding conductive connection effects, during the process of half-cut judgment, the judgment result of the half-cut position may be affected by the light leakage of the substrate 600.

[0079] It can be understood that step S200 is specifically: pasting a black tape at a position between the first chip 710 and the second chip 720 on the substrate 600 to obtain the black light-shielding adhesive layer 610.

[0080] The light-shielding adhesive layer 610 formed by the black tape can cover the hollow positions in the substrate 600 for judging the half-cut position. Compared with the substrate 600 provided with a hollow structure, the light-shielding adhesive layer 610 can form a more reliable judgment basis, effectively improving the recognition rate of the half-cut position, and thus effectively improving the half-cut accuracy.

[0081] It can be understood that step S500, performing a second injection molding on the unit package 810 with an outer encapsulation material to obtain a second package 900 covering the two unit packages 810, includes:

[0082] S510, performing a second injection molding on the unit package 810 with a black outer encapsulation material to obtain the black second package 900 covering the two unit packages 810.

[0083] For the distance sensor, the first chip 710 and the second chip 720 are respectively set as a light-emitting chip and a sensing chip. The light-emitting chip is used to emit light, and the second chip 720 is used to sense light. Therefore, corresponding window structures need to be set in the semiconductor device to enable the first chip 710 and the second chip 720 to transmit light to the external environment.

[0084] It can be understood that step S510, the second injection molding of the unit package 810 with a black outer encapsulation material to obtain the black second package 900 covering the two unit packages 810, includes:

[0085] S511. Place the unit package 810 into a mold, and the mold is provided with a punch for respectively abutting against the top surfaces of the two unit packages 810;

[0086] S512. Perform the second injection molding on the mold with a black outer encapsulation material to obtain the black second package 900 covering the two unit packages 810. The second package 900 is provided with openings for connecting the unit package 810 to the external environment.

[0087] The light-emitting surface of the first chip 710 and the sensing surface of the second chip 720 both face away from the substrate 600, that is, the light-emitting surface of the first chip 710 and the sensing surface of the second chip 720 both face upward. Corresponding punches are formed by designing the mold to form openings in the second package 900. The two opening structures respectively face the light-emitting surface of the first chip 710 and the sensing surface of the second chip 720. The openings connect the unit package 810 and the external environment, and the unit package 810 is formed by half-cutting a transparent first package 800. Therefore, the first chip 710 can emit light to the external environment, and the second chip 720 can sense the light from the external environment.

[0088] It can be understood that step 100, installing the mutually separated first chip 710 and second chip 720 on the substrate 600, includes:

[0089] S110. Install the first chip 710 and the second chip 720 on the substrate 600 respectively through silver paste;

[0090] S120. Connect the terminals of the first chip 710 and the terminals of the second chip 720 to the corresponding conductive lines in the substrate 600 respectively through leads.

[0091] The following is an example of the size of the light-shielding glue layer 610. The thickness of the light-shielding glue layer 610 obtained by scribing the light-shielding glue in step S200 is 0.15 - 0.2 mm. As Figure 7 shown, the width of the light-shielding glue layer 610 is 0.2 - 0.3 mm. The first chip 710 and the second chip 720 are installed on the corresponding pads of the substrate 600. The distances between the light-shielding glue layer 610 and the pads where the first chip 710 is located and the pads where the second chip 720 is located are both 0.1 - 0.15 mm.

[0092] An embodiment of the second aspect of the present invention provides a production method of a semiconductor device, including the half-cut encapsulation method of the semiconductor device in the above-mentioned first aspect embodiment.

[0093] By scribing a light-shielding adhesive on the substrate 600 before the first injection molding, and the light-shielding adhesive layer 610 is located between the first chip 710 and the second chip 720, the first package 800 obtained from the first injection molding is semi-cut with the light-shielding adhesive layer 610 as a reference. When semi-cutting, the first package 800 is cut into until reaching the light-shielding adhesive layer 610. By using the opaque light-shielding adhesive layer 610 to judge the position reached by the semi-cutting, the recognition rate of judging the semi-cutting position can be effectively improved, and then the semi-cutting accuracy can be effectively improved. In addition, since the light-shielding adhesive layer 610 with a certain thickness is provided on the substrate 600, during the semi-cutting process, the tolerance rate for the cut-in depth is high, and the probability that the substrate 600 is cut into during semi-cutting can be significantly reduced, thereby effectively improving the reliability of the substrate 600. The substrate 600 is not likely to have problems such as cracking, and then the performance of the semiconductor device obtained by packaging is improved.

[0094] It can be understood that the substrate 600 is provided with multiple sets of positions for installing the first chip 710 and the second chip 720. After the semi-cut packaging of the semiconductor device is completed, full cutting of the second package 900 and the substrate 600 can obtain multiple independent semiconductor devices.

[0095] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0096] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for half-cut packaging of semiconductor devices, characterized in that, Including: Mounting a first chip and a second chip separated from each other on a substrate; Scratching a light-shielding adhesive at a position between the first chip and the second chip on the substrate to obtain a light-shielding adhesive layer; Performing a first injection molding on the substrate through a transparent adhesive material to obtain a first package covering the first chip, the second chip, and the light-shielding adhesive layer; Half-cutting the first package to the light-shielding adhesive layer based on the light-shielding adhesive layer and determining the position reached by the half-cut through the opaque light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip; Performing a second injection molding on the unit packages through an outer encapsulation adhesive material to obtain a second package covering the two unit packages; 2. The half-cut packaging method of the semiconductor device according to claim 1, characterized in that, The half-cutting the first package to the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip includes: Measuring the half-cut distance between the cutting tool and the upper surface of the light-shielding adhesive layer; Half-cutting the first package to the upper surface of the light-shielding adhesive layer according to the half-cut distance to obtain two unit packages respectively covering the first chip and the second chip; 3. The half-cut packaging method of the semiconductor device according to claim 2, characterized in that The half-cutting the first package to the upper surface of the light-shielding adhesive layer according to the half-cut distance to obtain two unit packages respectively covering the first chip and the second chip includes: Setting the cutting depth to be less than the thickness of the light-shielding adhesive layer; Calculating the sum of the half-cut distance and the cutting depth to obtain the half-cut depth; Half-cutting the first package to the inside of the light-shielding adhesive layer according to the half-cut depth to obtain two unit packages respectively covering the first chip and the second chip; 4. The half-cut packaging method of the semiconductor device according to any one of claims 1 to 3, characterized in that, After half-cutting the first package to the light-shielding adhesive layer to obtain two unit packages respectively covering the first chip and the second chip, it further includes: Detecting the appearance of the unit packages; When the light-shielding adhesive layer in the unit package completely disappears, sending the unit package for repair; 5. The half-cut packaging method of the semiconductor device according to claim 1, wherein Intervals are formed between the light-shielding adhesive layer and the first chip and the second chip respectively; 6. The half-cut packaging method of the semiconductor device according to claim 1, characterized in that, The scratching a light-shielding adhesive at a position between the first chip and the second chip on the substrate to obtain a light-shielding adhesive layer includes: Scratching a black light-shielding adhesive at a position between the first chip and the second chip on the substrate to obtain the black light-shielding adhesive layer; 7. The half-cut packaging method of the semiconductor device according to claim 6, wherein, The performing a second injection molding on the unit packages through an outer encapsulation adhesive material to obtain a second package covering the two unit packages includes: Performing a second injection molding on the unit packages through a black outer encapsulation adhesive material to obtain the black second package covering the two unit packages; 8. The half-cut packaging method of the semiconductor device according to claim 7, characterized in that, The performing a second injection molding on the unit packages through a black outer encapsulation adhesive material to obtain the black second package covering the two unit packages includes: Placing the unit packages into a mold, and the mold is provided with a punch for respectively abutting against the top surfaces of the two unit packages; The second injection molding is performed on the mold through the black outer encapsulation material to obtain the second encapsulation body which is black and covers the two unit encapsulation bodies, and the second encapsulation body is provided with a window for communicating the unit encapsulation body with the external environment.

9. The half-cut packaging method of the semiconductor device according to claim 1, characterized in that The mounting of the mutually separated first chip and second chip on the substrate includes: Mounting the first chip and the second chip to the substrate respectively through silver paste; Connecting the terminals of the first chip and the terminals of the second chip to the corresponding conductive lines in the substrate respectively through leads.

10. A method for manufacturing a semiconductor device, characterized in that, A half-cut encapsulation method for a semiconductor device including the semiconductor device according to any one of claims 1 to 9.

Images