A dual-axis weak magnetic sensor sensitive chip based on magnetoresistance effect

Abstract

The application relates to a dual-axis weak magnetic sensor sensitive chip based on a magnetic resistance effect, and relates to a weak magnetic sensor sensitive chip. The application is used for solving the problems of poor measurement accuracy and single measurement direction of the existing weak magnetic sensor. The application comprises an electrode lead layer (10), a four-terminal Wheatstone bridge type magnetic resistance (20), a setting / reset current band (31) and a bias magnetic field band (41), the electrode lead layer (10), the four-terminal Wheatstone bridge type magnetic resistance (20), the setting / reset current band (31) and the bias magnetic field band (41) are sequentially encapsulated from top to bottom, and an insulating layer is arranged between the electrode lead layer (10) and the four-terminal Wheatstone bridge type magnetic resistance (20), between the four-terminal Wheatstone bridge type magnetic resistance (20) and the setting / reset current band (31), and between the setting / reset current band (31) and the bias magnetic field band (41); and a four-terminal Wheatstone resistance bridge layer (21) in the four-terminal Wheatstone bridge type magnetic resistance (20) is encapsulated on a magnetic resistance layer (22). The application is used for weak magnetic measurement.

Description

TECHNICAL FIELD

[0001] The application relates to a sensitive chip, in particular to a dual-axis weak magnetic sensor sensitive chip based on a magnetic resistance effect. BACKGROUND

[0002] A magnetic field is one of basic physical fields in nature, and plays a huge role in magnetic phenomenon cognition and application, and plays a unique role in anti-submarine, geomagnetic navigation, biological magnetic mark and other fields. According to the theory of magnetism, when a ferromagnetic object is in a magnetic field, the original magnetic field will be disturbed, and a magnetic field anomaly is caused. By detecting the anomaly, the magnetic target can be positioned. The target detection method has the advantages of wide application range, good concealment and strong anti-interference ability, and has great military and industrial application value. From the perspective of magnetic field induction range, the magnetic field sensor can be divided into three types: low-intensity magnetic field sensor, medium-intensity magnetic field sensor and high-intensity magnetic field sensor. The low-intensity magnetic field sensor, also known as a weak magnetic measurement sensor, is usually used to detect a magnetic field below 0.1 nT.

[0003] In China, due to the coil design and processing problems, the sensitive chip based on the magnetic resistance effect is still in the laboratory stage, and the measurement precision is low, and there is no mature product. Three coordinates are needed for target detection and positioning, and three single-axis magnetic sensitive chips are needed to achieve this. The application provides a dual-axis weak magnetic sensor sensitive chip based on the magnetic resistance effect, which can solve the problems of low measurement precision and accurate detection and positioning. SUMMARY

[0004] The application aims to solve the problems of poor measurement precision and single measurement direction of the existing weak magnetic sensor, and further provides a dual-axis weak magnetic sensor sensitive chip based on the magnetic resistance effect.

[0005] The technical scheme of the application is that the dual-axis weak magnetic sensor sensitive chip based on the magnetic resistance effect is composed of two single-axis weak magnetic sensor sensitive chips, and the two single-axis weak magnetic sensor sensitive chips are the same, are stacked up and down, and are 90 degrees. Each single-axis weak magnetic sensor sensitive chip is composed of an electrode lead layer, a four-terminal Wheatstone bridge type magnetic resistance, a set / reset current band and a bias magnetic field band. The electrode lead layer, the four-terminal Wheatstone bridge type magnetic resistance, the set / reset current band and the bias magnetic field band are sequentially packaged from top to bottom, and an insulating layer is arranged between the electrode lead layer and the four-terminal Wheatstone bridge type magnetic resistance, between the four-terminal Wheatstone bridge type magnetic resistance and the set / reset current band, and between the set / reset current band and the bias magnetic field band. The four-terminal Wheatstone bridge type magnetic resistance comprises a four-terminal Wheatstone resistance bridge layer and a magnetic resistance layer, and the four-terminal Wheatstone resistance bridge layer is packaged on the magnetic resistance layer.

[0006] Further, the electrode lead layer is provided with a first power supply electrode hole, an output positive electrode hole, a ground electrode hole, a set / reset negative electrode hole, an output negative electrode hole, a second power supply electrode hole, a bias negative electrode hole, a set / reset positive electrode hole and a bias positive electrode hole; the first power supply electrode hole, the output positive electrode hole, the ground electrode hole, the output negative electrode hole and the second power supply electrode hole are sequentially provided on the upper side of the electrode lead layer from left to right, the bias negative electrode hole and the bias positive electrode hole are provided below the output negative electrode hole and the second power supply electrode hole on the right side of the electrode lead layer, the bias negative electrode hole is on the upper side, and the set / reset negative electrode hole and the set / reset positive electrode hole are sequentially provided on the lower side of the electrode lead layer from right to left on the left side of the bias positive electrode hole.

[0007] Further, the magnetoresistance layer includes 19 parallel double-tipped left magnetoresistance strips and 19 parallel double-tipped right magnetoresistance strips, the left magnetoresistance strips and the double-tipped right magnetoresistance strips are horizontally placed and have the same direction, and the double-tipped left magnetoresistance strips and the double-tipped right magnetoresistance strips are made of iron-nickel alloy.

[0008] Further, the four-terminal Wheatstone bridge layer includes a bridge layer body, an upper power supply electrode, an output positive electrode, a ground electrode, an output negative electrode and a lower power supply electrode, the upper power supply electrode, the output positive electrode, the ground electrode, the output negative electrode and the lower power supply electrode are respectively installed on the bridge layer body, and the installation positions of the upper power supply electrode, the output positive electrode, the ground electrode, the output negative electrode and the lower power supply electrode correspond to the first power supply electrode hole, the output positive electrode hole, the ground electrode hole, the output negative electrode hole and the second power supply electrode hole respectively.

[0009] Further, the four-terminal Wheatstone bridge layer further includes a first bridge arm, a second bridge arm, a third bridge arm and a fourth bridge arm, the first bridge arm, the second bridge arm, the third bridge arm and the fourth bridge arm are sequentially installed on the bridge layer body from top to bottom, and the upper power supply electrode is connected with the first bridge arm, the output positive electrode is connected with the second bridge arm and the first bridge arm, the ground electrode is connected with the third bridge arm and the second bridge arm, and the output negative electrode is connected with the fourth bridge arm and the third bridge arm.

[0010] Further, the first bridge arm, the second bridge arm, the third bridge arm and the fourth bridge arm each include a serpentine short connection strip, and the material of the serpentine short connection strip is aluminum or gold.

[0011] Further, the snake-shaped short-circuiting strip of the first bridge arm is 6 rows of parallel independent short-circuiting blocks which are inclined downward by 45 degrees to the left, and the vertical width of the independent short-circuiting blocks is greater than the width of the left double-tipped magnetic resistance strip; the snake-shaped short-circuiting strip of the second bridge arm is 6 rows of parallel independent short-circuiting blocks which are inclined downward by 45 degrees to the right and are perpendicular to the independent short-circuiting blocks of the first bridge arm, and the vertical width of the independent short-circuiting blocks is greater than the width of the left double-tipped magnetic resistance strip; the snake-shaped short-circuiting strip of the third bridge arm is 6 rows of parallel independent short-circuiting blocks which are inclined downward by 45 degrees to the left and are perpendicular to the independent short-circuiting blocks of the second bridge arm, and the vertical width of the independent short-circuiting blocks is greater than the width of the right double-tipped magnetic resistance strip; and the snake-shaped short-circuiting strip of the fourth bridge arm is 6 rows of parallel independent short-circuiting blocks which are inclined downward by 45 degrees to the right, and the vertical width of the independent short-circuiting blocks is greater than the width of the right double-tipped magnetic resistance strip.

[0012] Further, the set / reset current band adopts a double-helix ring structure, the upper helix ring structure is a clockwise helix ring structure from inside to outside, the lower helix ring structure is an anticlockwise helix ring structure from inside to outside, the middle is a connecting part, and the two ends are connected with the set / reset negative electrode hole and the set / reset positive electrode hole.

[0013] Further, the material of the set / reset current band is metal aluminum.

[0014] Further, the material of the bias magnetic field band is metal aluminum.

[0015] Compared with the prior art, the application has the following effects:

[0016] The double-tipped magnetic resistance strip can effectively form a magnetic resistance effect on the detected weak magnetic field, the symmetrical arrangement of multiple magnetic resistance strips greatly reduces the influence of self-heating of the circuit and the external temperature, and a strong magnetic field is formed by the strong current passing through the set / reset current band, so as to forcibly reset the magnetic sensitive element and eliminate the imbalance caused by the previous measurement process. In addition, in the bias magnetic field band, the magnetic field of the external environment can be offset by applying a direct current, so that the magnetic sensitive element only measures in the closed environment of the measured magnetic field, greatly improving the extraction accuracy of the weak magnetic signal, avoiding the influence of external noise, and significantly improving the measurement accuracy of the weak magnetic signal. The two weak magnetic sensitive chips are stacked up and down and placed at 90 degrees to measure the weak magnetic signals in two directions. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is the front view of the application. Figure 2 is a structural schematic view of the electrode hole lead layer. Figure 3 is a structural schematic view of the four-terminal Wheatstone resistance bridge layer. Figure 4 is a structural schematic view of the magnetic resistance layer. Figure 5 is a structural schematic view of the set / reset current band layer. Figure 6 is a structural schematic view of the bias magnetic field band layer. DETAILED DESCRIPTION

[0018] Specific implementation one: combination Figures 1 to 6 In this embodiment, a dual-axis weak magnetic sensor sensitive chip based on the magnetoresistance effect includes an electrode lead layer 10, a four-terminal Wheatstone bridge type magnetoresistance 20, a set / reset current band 31, and a bias magnetic field band 41. The electrode lead layer 10, the four-terminal Wheatstone bridge type magnetoresistance 20, the set / reset current band 31, and the bias magnetic field band 41 are sequentially encapsulated from top to bottom, and an insulating layer is arranged between the electrode lead layer 10 and the four-terminal Wheatstone bridge type magnetoresistance 20, between the four-terminal Wheatstone bridge type magnetoresistance 20 and the set / reset current band 31, and between the set / reset current band 31 and the bias magnetic field band 41. The four-terminal Wheatstone bridge type magnetoresistance 20 includes a four-terminal Wheatstone resistance bridge layer 21 and a magnetoresistance layer 22, and the four-terminal Wheatstone resistance bridge layer 21 is encapsulated on the magnetoresistance layer 22.

[0019] The four metal layers in this embodiment are all square in shape with a size of 1.205 mm x 1.205 mm.

[0020] Specific implementation two: combination Figure 2 In this embodiment, the electrode lead layer 10 is provided with a first power supply electrode hole 101, an output positive electrode hole 102, a ground electrode hole 103, a set / reset negative electrode hole 104, an output negative electrode hole 105, a second power supply electrode hole 106, a bias negative electrode hole 107, a set / reset positive electrode hole 108, and a bias positive electrode hole 109. The first power supply electrode hole 101, the output positive electrode hole 102, the ground electrode hole 103, the output negative electrode hole 105, and the second power supply electrode hole 106 are sequentially arranged on the upper side of the electrode lead layer 10 from left to right. The bias negative electrode hole 107 and the bias positive electrode hole 109 are arranged below the output negative electrode hole 105 and the second power supply electrode hole 106 on the right side of the electrode lead layer 10, with the bias negative electrode hole 107 on the top. The set / reset negative electrode hole 104 and the set / reset positive electrode hole 108 are arranged on the lower side of the electrode lead layer 10 from right to left on the left side of the bias positive electrode hole 109. In this way, the pins can be easily distinguished and led out during chip packaging. The other components and connection relationships are the same as those in specific implementation one.

[0021] The electrode lead layer 10 in this embodiment is arranged on the uppermost surface of the sensitive chip, and generally uses metal aluminum or copper.

[0022] Specific implementation three: combination Figure 4The embodiment is described, the magnetoresistance layer 22 includes 19 parallel double-tipped left magnetic resistance strips 2201 and 19 parallel double-tipped right magnetic resistance strips 2202, the left magnetic resistance strip 2201 and the double-tipped right magnetic resistance strip 2202 are horizontally placed, the same direction, the material of the double-tipped left magnetic resistance strip 2201 and the double-tipped right magnetic resistance strip 2202 is iron-nickel alloy. So set, compact structure, small volume, easy to process and have obvious impedance effect on the measured magnetic field. Other components and connection relations are the same as those in the first or second embodiment.

[0023] The fourth embodiment is described. Figure 3 The embodiment is described, the four-terminal Wheatstone bridge layer 21 includes a resistance bridge layer body, an upper power supply electrode 2101, an output positive electrode 2102, a ground electrode 2103, an output negative electrode 2104 and a lower power supply electrode 2105, the upper power supply electrode 2101, the output positive electrode 2102, the ground electrode 2103, the output negative electrode 2104 and the lower power supply electrode 2105 are respectively installed on the resistance bridge layer body, wherein the installation positions of the upper power supply electrode 2101, the output positive electrode 2102, the ground electrode 2103, the output negative electrode 2104 and the lower power supply electrode 2105 correspond to the first power supply electrode hole 101, the output positive electrode hole 102, the ground electrode hole 103, the output negative electrode hole 105 and the second power supply electrode hole 106 respectively. So set, it is convenient to correspond one by one with the electrode hole in the first embodiment. Other components and connection relations are the same as those in the first, second or third embodiment.

[0024] The fifth embodiment is described. Figure 3 The embodiment is described, the four-terminal Wheatstone bridge layer 21 in the embodiment further includes a first bridge arm 2109, a second bridge arm 2108, a third bridge arm 2107 and a fourth bridge arm 2106, the first bridge arm 2109, the second bridge arm 2108, the third bridge arm 2107 and the fourth bridge arm 2106 are installed on the resistance bridge layer body in turn from top to bottom, wherein the upper power supply electrode 2101 is connected with the first bridge arm 2109, the output positive electrode 2102 is connected with the second bridge arm 2108 and the first bridge arm 2109, the ground electrode 2103 is connected with the third bridge arm 2107 and the second bridge arm 2108, and the output negative electrode 2104 is connected with the fourth bridge arm 2106 and the third bridge arm 2107. Form a Wheatstone bridge, convert the changing magnetic signal into an electric signal, and facilitate extraction. Other components and connection relations are the same as those in the first, second, third or fourth embodiment.

[0025] The sixth embodiment is described. Figure 3In this embodiment, the first bridge arm 2109, the second bridge arm 2108, the third bridge arm 2107 and the fourth bridge arm 2106 all contain a serpentine shorting bar, which is made of metal aluminum or gold. In this way, the four-terminal Wheatstone bridge layer 21 formed by the bridge arms is arranged in the magnetoresistance layer 22, facilitating signal extraction. The other components and connection relationships are the same as those in Embodiments One, Two, Three, Four, Five or Six.

[0026] Embodiment Seven: Combination Figure 3 In this embodiment, the serpentine shorting bar of the first bridge arm 2109 is 6 rows of parallel and left-down 45°-inclined independent shorting blocks, and the vertical width of the independent shorting blocks is greater than the width of the left double-tipped magnetoresistance bar 2201.

[0027] The serpentine shorting bar of the second bridge arm 2108 is 6 rows of parallel and right-down 45°-inclined independent shorting blocks, and is perpendicular to the independent shorting blocks of the first bridge arm 2109, and the vertical width of the independent shorting blocks is greater than the width of the left double-tipped magnetoresistance bar 2201.

[0028] The serpentine shorting bar of the third bridge arm 2107 is 6 rows of parallel and left-down 45°-inclined independent shorting blocks, and is perpendicular to the independent shorting blocks of the second bridge arm 2108, and the vertical width of the independent shorting blocks is greater than the width of the right double-tipped magnetoresistance bar 2202.

[0029] The serpentine shorting bar of the fourth bridge arm 2106 is 6 rows of parallel and right-down 45°-inclined independent shorting blocks, and the vertical width of the independent shorting blocks is greater than the width of the right double-tipped magnetoresistance bar 2202.

[0030] In this way, the four-terminal Wheatstone bridge structure is compact, facilitating processing, and the connection points of each bridge arm are easily matched with the electrode holes. The other components and connection relationships are the same as those in Embodiments One, Two, Three, Four, Five or Six.

[0031] Embodiment Eight: Combination Figure 5 In this embodiment, the set / reset current band 31 adopts an upper and lower double helical ring structure, the upper helical ring structure is a clockwise helical ring structure from inside to outside, the lower helical ring structure is a counterclockwise helical ring structure from inside to outside, and the two ends are connected with the set / reset negative electrode hole 104 and the set / reset positive electrode hole 108. In this way, the handle is easily connected, the connection is convenient, and the disassembly and maintenance are facilitated. The other components and connection relationships are the same as those in any one of Embodiments One to Seven.

[0032] Embodiment Nine: Combination Figure 5In this embodiment, the material of the setting / resetting current band 31 is aluminum. In this way, the current flowing through the setting / resetting current band 31 forms a strong magnetic field to reset the magnetic sensitive element without affecting the measurement of the magnetic sensitive element. The other components and connection relationships are the same as any one of embodiments 1 to 8.

[0033] Specific embodiment ten: in combination with Figure 6 In this embodiment, the material of the bias magnetic field band 41 is aluminum. In this way, the bias magnetic field band 41 is used to offset the influence of the external environment on the magnetic sensitive element or provide a feedback signal without affecting the measurement of the magnetic sensitive element. The other components and connection relationships are the same as any one of embodiments 1 to 8.

[0034] In combination with Figures 1 to 6 The working principle of the present application is described as follows:

[0035] In the packaging process of the present application, the uppermost electrode hole lead layer 10 leads the externally connected port to the appropriate position through the metal lead to form a pressure welding area; the four-terminal Wheatstone bridge layer 21 is connected with the magnetic resistance layer 22 without an insulating layer therebetween, and the magnetic resistance strips are symmetrically distributed to eliminate the influence of the circuit and temperature on the magnetic resistance characteristics and also eliminate the influence of the defects possibly existing in the single magnetic resistance design on the output characteristics of the bridge-type magnetic resistance circuit; the setting / resetting current band layer 31 makes the weak magnetic sensor not need an external coil, and through the setting / resetting current band integrated in the chip, the magnetic sensitive element in the sensor can be recalibrated or reset, and the imbalance caused by the electronic circuit and temperature can be eliminated; the bias magnetic field band layer 41 can be operated in multiple modes, one is that the rated current is passed through the current band to provide a fixed magnetic field in the direction intersecting with the sensitive axis, so that the direct current can be passed through the current band to offset the unwanted external magnetic field, and the other is that the feedback signal current is provided on the current band sheet to make the weak magnetic sensor work in a closed loop mode.

Claims

1. A biaxial weak magnetic field sensor sensing chip based on the magnetoresistive effect, characterized in that: It includes two single-axis weak magnetic sensor sensitive chips, the two single-axis weak magnetic sensor sensitive chips are the same in structure, and are stacked up and down by 90 degrees, each single-axis weak magnetic sensor sensitive chip includes an electrode lead layer (10), a four-terminal Wheatstone bridge type magnetic resistance (20), a setting / reset current band (31) and a bias magnetic field band (41), the electrode lead layer (10), the four-terminal Wheatstone bridge type magnetic resistance (20), the setting / reset current band (31) and the bias magnetic field band (41) are sequentially packaged from top to bottom, and an insulating layer is arranged between the electrode lead layer (10) and the four-terminal Wheatstone bridge type magnetic resistance (20), between the four-terminal Wheatstone bridge type magnetic resistance (20) and the setting / reset current band (31), and between the setting / reset current band (31) and the bias magnetic field band (41); The four-terminal Wheatstone bridge type magnetic resistance (20) includes a four-terminal Wheatstone bridge layer (21) and a magnetic resistance layer (22), and the four-terminal Wheatstone bridge layer (21) is packaged on the magnetic resistance layer (22); The magnetic resistance layer (22) includes 19 parallel double-tipped left magnetic resistance strips (2201) and 19 parallel double-tipped right magnetic resistance strips (2202), the double-tipped left magnetic resistance strips (2201) and the double-tipped right magnetic resistance strips (2202) are horizontally placed and have the same direction, and the double-tipped left magnetic resistance strips (2201) and the double-tipped right magnetic resistance strips (2202) are made of iron-nickel alloy; The four-terminal Wheatstone bridge layer (21) includes a bridge layer body, an upper power supply electrode (2101), an output positive electrode (2102), a ground electrode (2103), an output negative electrode (2104) and a lower power supply electrode (2105), and the upper power supply electrode (2101), the output positive electrode (2102), the ground electrode (2103), the output negative electrode (2104) and the lower power supply electrode (2105) are respectively installed on the bridge layer body, wherein the installation positions of the upper power supply electrode (2101), the output positive electrode (2102), the ground electrode (2103), the output negative electrode (2104) and the lower power supply electrode (2105) correspond to the first power supply electrode hole (101), the output positive electrode hole (102), the ground electrode hole (103), the output negative electrode hole (105) and the second power supply electrode hole (106) respectively; The setting / reset current band (31) adopts an upper and lower double helical ring structure, the upper helical ring structure is a clockwise helical ring structure from inside to outside, the lower helical ring structure is an anticlockwise helical ring structure from inside to outside, the middle is a connecting part, and the two ends are connected with the setting / reset negative electrode hole (104) and the setting / reset positive electrode hole (108).

2. The dual-axis soft magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 1, characterized in that: The electrode lead layer (10) is provided with a first power supply electrode hole (101), an output positive electrode hole (102), a ground electrode hole (103), a set / reset negative electrode hole (104), an output negative electrode hole (105), a second power supply electrode hole (106), a bias negative electrode hole (107), a set / reset positive electrode hole (108) and a bias positive electrode hole (109); the first power supply electrode hole (101), the output positive electrode hole (102), the ground electrode hole (103), the output negative electrode hole (105) and the second power supply electrode hole (106) are sequentially provided on the upper side of the electrode lead layer (10) from left to right, the bias negative electrode hole (107) and the bias positive electrode hole (109) are provided below the output negative electrode hole (105) and the second power supply electrode hole (106) on the right side of the electrode lead layer (10), the bias negative electrode hole (107) is on the upper side, and the set / reset negative electrode hole (104) and the set / reset positive electrode hole (108) are sequentially provided on the lower side of the electrode lead layer (10) from right to left on the left side of the bias positive electrode hole (109).

3. The dual-axis soft magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 2, characterized in that: The four-terminal Wheatstone bridge layer (21) further comprises a first bridge arm (2109), a second bridge arm (2108), a third bridge arm (2107) and a fourth bridge arm (2106), the first bridge arm (2109), the second bridge arm (2108), the third bridge arm (2107) and the fourth bridge arm (2106) are sequentially installed on the resistance bridge layer body from top to bottom, wherein the upper power supply electrode (2101) is connected with the first bridge arm (2109), the output positive electrode (2102) is connected with the second bridge arm (2108) and the first bridge arm (2109), the ground electrode (2103) is connected with the third bridge arm (2107) and the second bridge arm (2108), the output negative electrode (2104) is connected with the fourth bridge arm (2106) and the third bridge arm (2107).

4. The dual-axis soft magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 3, characterized in that: The first bridge arm (2109), the second bridge arm (2108), the third bridge arm (2107) and the fourth bridge arm (2106) each contain a serpentine short-circuit strip, and the material of the serpentine short-circuit strip is aluminum or gold.

5. The dual-axis weak magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 4, characterized in that: the serpentine short-circuit strip of the first bridge arm (2109) is 6 rows of independent short-circuit blocks parallel to each other and inclined downward by 45° to the left, and the vertical width of the independent short-circuit blocks is greater than the width of the double-tipped left magnetic resistance strip (2201); the serpentine short-circuit strip of the second bridge arm (2108) is 6 rows of independent short-circuit blocks parallel to each other and inclined downward by 45° to the right, and perpendicular to the independent short-circuit blocks of the first bridge arm (2109), and the vertical width of the independent short-circuit blocks is greater than the width of the double-tipped left magnetic resistance strip (2201); the serpentine short-circuit strip of the third bridge arm (2107) is 6 rows of independent short-circuit blocks parallel to each other and inclined downward by 45° to the left, and perpendicular to the independent short-circuit blocks of the second bridge arm (2108), and the vertical width of the independent short-circuit blocks is greater than the width of the double-tipped right magnetic resistance strip (2202); The serpentine shorting bar of the fourth bridge arm (2106) is 6 rows of independent shorting blocks that are parallel and inclined downward to the right by 45 degrees, and the vertical width of the independent shorting blocks is greater than the width of the double-tipped right magnetic resistance bar (2202).

6. The dual-axis soft magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 1, characterized in that: The material of the set / reset current band (31) is metal aluminum.

7. The dual-axis soft magnetic sensor sensitive chip based on the magnetoresistance effect according to claim 1, characterized in that: The material of the bias magnetic field band (41) is metal aluminum.

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