A perovskite solar cell based on acrylamide insulating layer quantum tunneling effect and a preparation method thereof

Abstract

The application discloses a perovskite solar cell based on acrylamide insulating layer quantum tunneling effect and a preparation method thereof, and comprises, from bottom to top, a conductive glass ITO, an electron transport layer, a perovskite photoactive layer, an insulating layer, a hole transport layer and an electrode; the material of the insulating layer is acrylamide. The preparation method comprises the following steps: step 10, cleaning the conductive glass ITO; step 20, preparing the electron transport layer on the conductive glass ITO; step 30, preparing the perovskite photoactive layer on the electron transport layer; step 40, preparing the insulating layer on the perovskite photoactive layer; the material of the insulating layer is acrylamide; step 50, preparing the hole transport layer on the insulating layer; and step 60, evaporating the electrode on the hole transport layer. The application adopts acrylamide as the insulating layer of the perovskite solar cell, improves the carrier separation capacity through quantum tunneling effect, reduces the recombination of electrons and holes, and finally improves the device efficiency and stability.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cell technology, specifically relating to a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer and its fabrication method. Background Technology

[0002] In recent years, emerging organic-inorganic hybrid lead-based perovskite solar cells (PSCs) have attracted much attention and achieved a series of significant breakthroughs. In just over a decade, their photoelectric conversion efficiency has increased from 3.8% to 25.7%. However, their high toxicity, low stability, and failure to reach theoretical efficiency have greatly limited their commercial development. Therefore, it is essential to design a novel material that can simultaneously improve device efficiency and stability.

[0003] The insertion of an insulating layer in planar heterojunction solar cells serves several purposes. Firstly, it slows down the decomposition of the perovskite film, preventing lead leakage. Secondly, it prevents moisture from penetrating the upper surface and damaging the perovskite layer. Furthermore, it provides passivation, reducing defect formation and suppressing non-radiative recombination efficiency. While the insertion of an insulating layer significantly improves the stability of solar cells, it inevitably reduces carrier transport efficiency, thereby lowering device efficiency. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer and its fabrication method. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] A first aspect of the present invention provides a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, comprising: a conductive glass ITO, an electron transport layer, a perovskite photoactive layer, an insulating layer, a hole transport layer, and an electrode arranged sequentially from bottom to top; wherein the insulating layer is made of acrylamide.

[0006] In one embodiment of the present invention, the thickness of the insulating layer is 1-10 nm.

[0007] A second aspect of this invention provides a method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, comprising the following steps:

[0008] Step 10: Clean the conductive glass ITO;

[0009] Step 20: Prepare an electron transport layer on the conductive glass ITO;

[0010] Step 30: Prepare a perovskite photoactive layer on the electron transport layer;

[0011] Step 40: Prepare an insulating layer on the perovskite photoactive layer; the insulating layer is made of acrylamide.

[0012] Step 50: Prepare a hole transport layer on the insulating layer;

[0013] Step 60: Evaporate electrodes onto the hole transport layer to obtain a solar cell as described in the first aspect of the present invention.

[0014] In one embodiment of the present invention, step 20 specifically includes the following steps:

[0015] Step 21: Spin-coating SnO2 quantum dots onto clean conductive glass ITO using a spin coater to form an electron transport layer. The spin coater speed is 2000rpm-4000rpm and the spin coat time is 30-40s.

[0016] Step 22: Place the product with the spin-coated electron transport layer in an atmospheric environment at 100-160℃ and dry for 10-40 minutes.

[0017] In one embodiment of the present invention, step 30 specifically includes the following steps:

[0018] Step 31: Spin coat the electron transport layer with a concentration of 1.3M using a spin coater; wherein the spin coater speed is 1500-2000 rpm, the spin coat time is 25-40s, and the layer is dried at 60-70℃ in a glove box filled with nitrogen for 1min.

[0019] Step 32: Spin-coat the methyl ether hydroiodide precursor solution onto PbI2 at a speed of 1200-1700 rpm for 30-45 s to form a perovskite precursor film.

[0020] Step 33: Transfer the product prepared in step 32 to an atmospheric environment with a humidity of 30-40%RH, and crystallize the perovskite precursor film on a hot stage at 110-160℃. After annealing for 5-20 minutes, wait for the product to cool to room temperature to complete the preparation of the perovskite photoactive layer.

[0021] In one embodiment of the present invention, step 40 specifically includes the following steps:

[0022] Step 41: Dissolve 1 mg of acrylamide in 1 mL of 2-propanol solution and stir at room temperature for 2 h to disperse the acrylamide;

[0023] Step 42: Filter the dispersed solution through an organic filter membrane with a diameter of 0.45 μm to obtain an acrylamide / 2-propanol solution;

[0024] Step 43: Dilute the acrylamide / 2-propanol solution with 2-propanol solution to form a 0.01-1 mg / mL acrylamide / 2-propanol solution;

[0025] Step 44: In a nitrogen-filled glove box, spin-coat a 0.01-1 mg / mL acrylamide / 2-propanol solution onto the perovskite photoactive layer using a spin coater to obtain an insulating layer; the thickness of the insulating layer is 1-10 nm.

[0026] Step 45: Dry the product prepared in step 44 in a glove box at 55-65°C for 10-15 minutes. The insulation layer preparation is complete.

[0027] In one embodiment of the present invention, step 50 specifically includes the following steps:

[0028] Step 51: Dissolve 72-90 mg of Spiro-OMeTAD material in 1 mL of chlorobenzene, then add 20-40 mg of Li-TFSI and 20-30 μL of 4-tert-butylpyridine solution, and stir until homogeneous;

[0029] Step 52: Using a spin coating device, further spin coat the Spiro-OMeTAD solution onto the insulating layer to complete the preparation of the hole transport layer; wherein, the spin coating speed is 3000-4000 rpm; the spin coating time is 25-60 s.

[0030] In one embodiment of the present invention, the electrode is made of silver or gold.

[0031] The beneficial effects of this invention are:

[0032] This invention utilizes acrylamide, an organic small-molecule insulating material, as the insulating layer (quantum tunneling layer) of an organic-inorganic hybrid perovskite solar cell. As an insulating layer, acrylamide enhances carrier transport capability, thereby increasing current density. It also effectively prevents electrons from passing through this layer into the hole transport layer. Photogenerated holes in the perovskite valence band can be transferred to the hole transport layer via quantum tunneling. The insertion of the insulating layer effectively reduces electron-hole recombination, further improving carrier transport capability and ultimately enhancing the device's photoelectric conversion efficiency. Furthermore, acrylamide's strong hydrophilicity effectively prevents water and oxygen molecules from damaging the perovskite layer, while also slowing down perovskite degradation and improving device stability.

[0033] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0034] Figure 1A schematic diagram illustrating the structural formula and calculated bandgap of acrylamide in a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, provided as an embodiment of the present invention:

[0035] Figure 2 A schematic diagram of a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer is provided in an embodiment of the present invention;

[0036] Figure 3 This is a schematic diagram of the energy level matching of each layer of a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, provided as an embodiment of the present invention. Detailed Implementation

[0037] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0038] Example 1

[0039] Please see Figure 2 The first aspect of this invention provides a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, comprising: a conductive glass ITO100, an electron transport layer 200, a perovskite photoactive layer 300, an insulating layer 400, a hole transport layer 500, and an electrode 600, arranged sequentially from bottom to top. The thickness of the insulating layer (quantum tunneling layer) 400 is 1-10 nm, wherein the insulating layer serves as the quantum tunneling layer. The thickness of the insulating layer (quantum tunneling layer) 400 can be 1 nm, 2 nm, 5 nm, or 10 nm. The hole transport layer 500 is 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, also known as Spiro-OMeTAD.

[0040] In this embodiment, as Figure 1 and Figure 2 As shown, the band gap of the insulating organic small molecule acrylamide was theoretically simulated and calculated. Acrylamide was used as the insulating layer (quantum tunneling layer) of the perovskite solar cell. Through the quantum tunneling effect, the carrier separation capability was improved, the recombination of electrons and holes was reduced, and a certain protective effect was provided to the perovskite layer, ultimately improving the device efficiency and stability.

[0041] Specifically, this invention uses acrylamide, an organic small-molecule insulating material, as the insulating layer (quantum tunneling layer) of an organic-inorganic hybrid perovskite solar cell. Acrylamide has the advantages of simple preparation method, low production cost, and abundant availability in daily life and production, and it also has good water solubility. Acrylamide is an insulating small-molecule material with electrophilic groups, and it is expected to be deposited on the surface of perovskite thin films to form a thin and dense film as the insulating layer (quantum tunneling layer) of perovskite solar cells. The main objectives are as follows: 1. ... Figure 1 As shown, acrylamide contains -NH2 electrophilic groups. According to numerous literature reports, these electrophilic groups can effectively passivate Pb in perovskites. 2+ Defects reduce the defect state density, thereby increasing carrier transport capability and ultimately improving current density; secondly, acrylamide deposition forms a 1-10 nm thick insulating film on the surface of the perovskite layer, such as... Figure 3 As shown, the conduction band and valence band positions of acrylamide are higher and lower than those of the hole transport material Spiro-OMeTAD, respectively. The valence band potential of the perovskite photoactive layer 300 is lower than that of the hole transport layer 500. Therefore, holes on the valence band of the perovskite photoactive layer 300 can migrate to the valence band of the hole transport layer 500 through quantum tunneling. Due to the energy barrier between the perovskite photoactive layer 300 and the conduction band of the hole transport layer 500, electrons on the conduction band of the perovskite photoactive layer 300 are blocked by the insulating layer (quantum tunneling layer), effectively suppressing electrons on the conduction band of the photoactive layer from flowing into the hole transport layer 500 through this layer. At this time, the insertion of the acrylamide insulating layer (quantum tunneling layer) effectively reduces electron-hole recombination, improves carrier transport capability, and ultimately improves the photoelectric conversion efficiency of the device. Thirdly, acrylamide has strong hydrophilicity, which can effectively block water and oxygen molecules from damaging the perovskite layer, and can also slow down the degradation of perovskite, thus improving the stability of the device.

[0042] Example 2

[0043] A second aspect of this invention provides a method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, comprising the following steps:

[0044] Step 10: Clean the conductive glass ITO100. Specifically,

[0045] Step 11: Use an ultrasonic cleaner with detergent powder to ultrasonically clean for 10-20 minutes;

[0046] Step 12: Use an ultrasonic cleaner to ultrasonically clean the glass with conductive glass cleaning fluid for 10-20 minutes.

[0047] Step 13: Use an ultrasonic cleaner to ultrasonically clean with deionized water for 10-20 minutes;

[0048] Step 14: Use an ultrasonic cleaner to ultrasonically clean with acetone for 10-20 minutes;

[0049] Step 15: Use an ultrasonic cleaner to ultrasonically clean with isopropyl alcohol for 10-20 minutes;

[0050] Step 20: Fabricate an electron transport layer 200 on conductive ITO100 glass. The specific steps of step 20 include:

[0051] Step 21: Spin-coating SnO2 quantum dots onto clean conductive glass ITO100 using a spin coater to form an electron transport layer 200. The spin coater rotates at 2000 rpm to 4000 rpm and the spin coat time is 30 to 40 seconds.

[0052] Step 22: Place the product with spin-coated electron transport layer 200 in an atmospheric environment at 100-160℃ and dry for 10-40 minutes.

[0053] Step 30: Fabricate a perovskite photoactive layer 300 on the electron transport layer 200. The specific steps of step 30 include:

[0054] Step 31: Spin coat 1.3M PbI2 onto electron transport layer 200 using a spin coater; wherein the spin coater speed is 1500-2000 rpm, the spin coat time is 25-40s, and the PbI2 is dried at 60-70℃ in a glove box filled with nitrogen for 1min.

[0055] Step 32: Spin-coat the methyl ether hydroiodide precursor solution onto PbI2 at a speed of 1200-1700 rpm for 30-45 s to form a perovskite precursor film.

[0056] Step 33: Transfer the product prepared in step 32 to an atmospheric environment with a humidity of 30-40%RH, and crystallize the perovskite precursor film on a hot stage at 110-160℃. After annealing for 5-20 minutes, wait for the product to cool to room temperature to complete the preparation of the perovskite photoactive layer 300.

[0057] Step 40: Prepare an insulating layer (quantum tunneling layer) 400 on the perovskite photoactive layer 300; the insulating layer (quantum tunneling layer) 400 is made of acrylamide. The specific steps of step 40 include:

[0058] Step 41: Dissolve 1 mg of acrylamide in 1 mL of 2-propanol solution and stir at room temperature for 2 h to disperse the acrylamide;

[0059] Step 42: Filter the dispersed solution through an organic filter membrane with a diameter of 0.45 μm to obtain an acrylamide / 2-propanol solution;

[0060] Step 43: Dilute the acrylamide / 2-propanol solution with 2-propanol solution to form a 0.01-1 mg / mL acrylamide / 2-propanol solution;

[0061] Step 44: In a nitrogen-filled glove box, spin-coat a 0.01-1 mg / mL acrylamide / 2-propanol solution onto the perovskite photoactive layer 300 using a spin coater to obtain an insulating layer (quantum tunneling layer) 400; the thickness of the insulating layer (quantum tunneling layer) 400 is 1-10 nm; the spin coater speed is 4000-6000 rpm / s; the thickness of the insulating layer (quantum tunneling layer) 400 can be 1 nm, 2 nm, 5 nm or 10 nm.

[0062] Step 45: Dry the product prepared in step 44 at 55-65°C for 10-15 min in a glove box. The preparation of the insulating layer (quantum tunneling layer) 400 is completed.

[0063] Step 50: Fabricate a hole transport layer 500 on the insulating layer (quantum tunneling layer) 400. The specific steps of step 50 include:

[0064] Step 51: Dissolve 72-90 mg of 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD) in 1 mL of chlorobenzene, then add 20-40 mg of lithium bis(trifluoromethanesulfonylimide) (Li-TFSI) salt and 20-30 μL of 4-tert-butylpyridine (tBP) solution, and stir until homogeneous;

[0065] Step 52: Using a spin coating device, further spin coat the Spiro-OMeTAD solution onto the insulating layer (quantum tunneling layer) 400 to complete the preparation of the hole transport layer 500; wherein, the spin coating speed is 3000-4000 rpm; the spin coating time is 25-60 s.

[0066] Step 60: Deposit electrode 600 onto hole transport layer 500 to obtain solar cell as described in claim 1 or 2. The specific fabrication process of electrode 600 is as follows:

[0067] Step 61: Use a knife to scrape out a width of about 2.5 mm from the product prepared in step 52, and use it as the negative electrode of the battery after metal is deposited by vapor deposition;

[0068] Step 62: Place the product made in step 61 into the mask of the vapor deposition electrode 600, and place it vertically above the tungsten wire blue boat used for the metal solvent source.

[0069] Step 63: Evacuate the high-temperature vapor deposition apparatus until the vacuum level reaches 5×10⁻⁶.-3 Below Pa, the source metal (Au or Ag particles) is introduced;

[0070] Step 64: By controlling the voltage, to Electrodes 600 are formed by rapidly vaporizing Au or Ag with a thickness of 80-120 nm.

[0071] Step 65: Remove the complete device with electrode 600 and store it in a drying oven with a humidity of 30-40% to complete the preparation of the acrylamide insulating layer (quantum tunneling layer) modified nip organic-inorganic hybrid perovskite solar cell in Example 1 (in the nip formal device, the role of Au or Ag electrode 600 is to collect electrons).

[0072] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0073] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0074] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0075] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0076] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0077] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, characterized in that, include: The structure consists of, from bottom to top, conductive glass ITO (100), an electron transport layer (200), a perovskite photoactive layer (300), an insulating layer (400), a hole transport layer (500), and an electrode (600). The insulating layer (400) is made of acrylamide, which is an insulating small molecule material. The hole transport layer (500) is made of Spiro-OMeTAD, and the conduction band and valence band of acrylamide are located higher and lower than the conduction band and valence band of Spiro-OMeTAD, respectively. The thickness of the insulating layer (400) is 1-10 nm.

2. A method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer, characterized in that, Includes the following steps: Step 10: Clean the conductive glass ITO (100); Step 20: Prepare an electron transport layer (200) on the conductive glass ITO (100); Step 30: Prepare a perovskite photoactive layer (300) on the electron transport layer (200); Step 40: Prepare an insulating layer (400) on the perovskite photoactive layer (300); the material of the insulating layer (400) is acrylamide; wherein, acrylamide is an insulating small molecule material; Step 50: Prepare a hole transport layer (500) on the insulating layer (400); wherein the material of the hole transport layer (500) is Spiro-OMeTAD, and the conduction band and valence band of acrylamide are located higher and lower than the conduction band and valence band of Spiro-OMeTAD, respectively. Step 60: Deposit electrode (600) on hole transport layer (500) to obtain solar cell as described in claim 1.

3. The method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer according to claim 2, characterized in that, The specific steps of step 20 include: Step 21: Spin-coating SnO2 quantum dots onto clean conductive glass ITO (100) using a spin coater to form an electron transport layer (200). The spin coater rotates at 2000 rpm to 4000 rpm and the spin coat time is 30 to 40 seconds. Step 22: Place the product with the spin-coated electron transport layer (200) in an atmospheric environment at 100-160℃ and dry for 10-40 minutes.

4. The method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer according to claim 2, characterized in that, The specific steps of step 30 include: Step 31: Using a spin coater, spin coat PbI2 with a concentration of 1.3M onto the electron transport layer (200); wherein the spin coater speed is 1500-2000 rpm, the spin coater time is 25-40s, and the PbI2 is dried at 60-70 ℃ in a glove box filled with nitrogen for 1 min. Step 32: Spin-coat the methyl ether hydroiodide precursor solution onto PbI2 at a speed of 1200-1700 rpm for 30-45 s to form a perovskite precursor film. Step 33: Transfer the product prepared in step 32 to an atmospheric environment with a humidity of 30-40%RH, and crystallize the perovskite precursor film on a hot stage at 110-160℃. After annealing for 5-20 minutes, wait for the product to cool to room temperature to complete the preparation of the perovskite photoactive layer (300).

5. The method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer according to claim 2, characterized in that, The specific steps of step 40 include: Step 41: Dissolve 1 mg of acrylamide in 1 mL of 2-propanol solution and stir at room temperature for 2 h to disperse the acrylamide; Step 42: Filter the dispersed solution through an organic filter membrane with a diameter of 0.45 μm to obtain an acrylamide / 2-propanol solution; Step 43: Dilute the acrylamide / 2-propanol solution with 2-propanol solution to form a 0.01-1 mg / mL acrylamide / 2-propanol solution; Step 44: In a nitrogen-filled glove box, spin coat a 0.01-1 mg / mL acrylamide / 2-propanol solution onto the perovskite photoactive layer (300) using a spin coater to obtain the insulating layer (400). Step 45: Dry the product prepared in step 44 at 55-65℃ for 10-15 min in a glove box. The insulation layer (400) is now complete.

6. The method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer according to claim 2, characterized in that, The specific steps of step 50 include: Step 51: Dissolve 72-90 mg of Spiro-OMeTAD material in 1 mL of chlorobenzene, then add 20-40 mg of Li-TFSI and 20-30 μL of 4-tert-butylpyridine solution, and stir until homogeneous; Step 52: Using a spin coating device, Spiro-OMeTAD solution is further spin-coated onto the insulating layer (400) to complete the preparation of the hole transport layer (500); wherein, the spin coating speed is 3000-4000 rpm; the spin coating time is 25-60 s.

7. The method for fabricating a perovskite solar cell based on the quantum tunneling effect of an acrylamide insulating layer according to claim 2, characterized in that, The electrode (600) is made of silver or gold.

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