Reaction By-Product Multiple Capture Device for Semiconductor Engineering

Abstract

The present invention relates to a multi-capture device for reaction by-products in semiconductor engineering, characterized in that: in order to separate the mixed reaction by-products contained in the unreacted gas discharged after the process of performing multiple depositions to form different thin film layers in the process chamber during semiconductor manufacturing engineering, by providing a capture area separation unit that can control the flow direction of the incoming unreacted gas and separate the heat distribution area while separating the capture areas for each reaction by-product, and based on this, in the front area, the reaction by-products that condense in the form of a thin film in the relatively high-temperature area are captured by the first internal capture tower, and in the rear area, the reaction by-products that condense in the form of powder in the relatively low-temperature area are captured by the second internal capture tower, a multi-capture device for reaction by-products in semiconductor engineering.

Description

Technical Field

[0001] The present invention relates to a reaction by-product multi-capture device for semiconductor engineering, and particularly to a multi-capture device that can capture mixed reaction by-products contained in unreacted gas discharged after performing a multi-layer thin film deposition process in a process chamber during semiconductor manufacturing engineering in the form of a thin film or powder in different capture temperature regions using a single capture device. Background Art

[0002] Generally speaking, semiconductor manufacturing engineering generally includes front-end engineering (Fabrication engineering) and back-end engineering (Assembly engineering). Front-end engineering refers to the process of manufacturing a semiconductor chip (Chip) by processing a specific pattern by repeating the process of depositing a thin film on a wafer (Wafer) and then selectively etching the deposited thin film in various process chambers (Chambers). Back-end engineering refers to the process of assembling a finished product by separately separating the chips manufactured in the front-end engineering and then bonding them to a lead frame.

[0003] At this time, in the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer, process gases such as silane, arsine, boron chloride, hydrogen, nitrogen, gaseous water, etc., or precursor gases for thin film deposition are injected into the process chamber through a gas injection system and are performed under high temperature conditions. At this time, a large amount of harmful gases containing various un-deposited reaction by-products, unreacted flammable gases, corrosive foreign substances, and toxic components will be generated inside the process chamber.

[0004] Therefore, in a semiconductor manufacturing device, in order to discharge the unreacted gas discharged from the process chamber after purification, a scrubber for purifying the discharged gas discharged from the process chamber and then discharging it to the atmosphere is provided at the rear end of a vacuum pump for converting the process chamber into a vacuum state.

[0005] However, the scrubber described above only purifies reaction by-products in gas form. Therefore, if the reaction by-products in particulate form contained in the unreacted gas discharged from the process chamber are not captured in advance, there will be problems such as an increase in exhaust pressure due to the reaction by-products contained in the unreacted gas that are directly discharged without being deposited in the process chamber sticking to the pipeline, or problems such as pump failure due to flowing into the vacuum pump, or problems such as contamination of the wafer due to backflow into the process chamber.

[0006] Therefore, between the process chamber of the semiconductor manufacturing apparatus and the vacuum pump, a reaction by-product capture device with various structures for condensing unreacted gases discharged from the process chamber is installed.

[0007] However, for existing reaction by-product capture devices, when performing a multiple deposition process of depositing different thin films in a process chamber, since the reaction by-products contained in the discharged unreacted gases form a mixed reaction by-product form, there is a structural problem that it is difficult to effectively capture them using a single capture device because the condensation temperatures of the respective reaction by-products are different from each other.

[0008] Therefore, in order to capture the mixed reaction by-products contained in the unreacted gases separately, it is necessary to separately provide capture devices with capture configurations having different temperature regions. For the reasons described above, it is necessary to additionally provide capture devices, and it is also necessary to match the capture temperature regions required for the respective reaction by-products to be captured through temperature control, resulting in a problem that the overall engineering device and engineering control become complicated.

[0009] Therefore, there is an urgent need to develop a reaction by-product capture device that can solve the above-described existing problems. Summary of the Invention

[0010] In order to solve the above problems, an object of the present invention is to provide a semiconductor engineering reaction by-product multiple capture device that separates mixed reaction by-products contained in unreacted gases discharged after performing a process of forming different thin film layers by multiple deposition in a process chamber of a semiconductor manufacturing process using one capture device. By providing a capture region separation unit that can separate the heat distribution region while controlling the flow direction of the incoming unreacted gas in order to separate the capture regions of the respective reaction by-products, based on this, in the front region, a first internal capture tower captures reaction by-products that condense in a thin film form in a relatively high temperature region, and in the rear region, a second internal capture tower captures reaction by-products that condense in a powder form in a relatively low temperature region.

[0011] In order to achieve the above-mentioned object and solve the problems existing in the prior art, the present invention provides a multi-capture device for reaction by-products in semiconductor engineering, which is characterized in that: as a device for capturing the mixed reaction by-products contained in the unreacted gas discharged after performing a multi-layer thin film deposition process in a process chamber during semiconductor manufacturing engineering, it includes: a capture area separation part, disposed inside the housing, which controls the flow of the incoming unreacted gas by heating with a cold and hot type heater and thereby separates the heat distribution area; a first internal capture tower, disposed in the front area of the capture area separation part, for capturing the reaction by-products that react at a relatively high temperature in the mixed reaction by-products contained in the incoming unreacted gas in the form of a thin film; and a second internal capture tower, disposed in the rear area of the capture area separation part, for capturing the reaction by-products that react at a relatively low temperature in the mixed reaction by-products contained in the incoming unreacted gas in the form of powder in a space area maintained at a lower temperature compared to the front area; thereby capturing the mixed reaction by-products contained in the unreacted gas by separating different areas in one device.

[0012] As a preferred embodiment, it is characterized in that: the housing includes: a housing main body, which forms a gas inlet on the side for accommodating the incoming unreacted gas; an upper plate, which forms a gas outlet on the upper part and protrudes downward to form a perforated gas guiding part; a lower plate, which can be firmly combined with the capture area separation part, the first internal capture tower and the second internal capture tower and provides support; and a cooling water flow path part, which is installed on the upper plate to cool and adjust the temperature of the upper plate and the outer surface of the housing.

[0013] As a preferred embodiment, it is characterized in that: the cold and hot type heater connects the lower cooling water flow path around the power supply pipe connected to the power supply part to the external cooling water pipe of the cooling water flow path part, so as to conduct heat during the circulation of the cooling water and thereby adjust the temperature of the outer surface of the housing.

[0014] As a preferred embodiment, it is characterized in that it further includes: a flow path conversion plate, disposed on the upper part of the capture area separation part, which converts and extends the flow path direction of the gas after passing through the second internal capture tower, so as to capture the remaining reaction by-products contained in the unreacted gas.

[0015] As a preferred embodiment, it is characterized in that it further includes: a grid type capture part, which captures the remaining reaction by-products contained in the unreacted gas discharged upward through a certain position area of the flow path conversion plate, and then discharges only the unreacted gas through the gas outlet of the upper plate.

[0016] As a preferred embodiment, it is characterized in that: the capture area separation part includes: a front baffle plate, which separates the reaction byproduct capture space by sealing the heat of the unreacted gas flowing in after heating and controlling its moving direction flow;

[0017] The upper baffle plate blocks the upward movement flow of the inflowing unreacted gas by blocking the upper part of the front baffle plate; and the gas moving part is formed at the lower part of the front baffle plate to guide the flow of the unreacted gas to the lower part for discharge.

[0018] As a preferred embodiment, it is characterized in that: the first internal capture tower is composed of a first capture plate located in the front and a second capture plate located at a certain distance therefrom, the first capture plate and the second capture plate respectively guide the flow of unreacted gas in the upward and downward directions through a gas moving part formed with a plurality of holes perforated on the surface above a certain position area, and a plurality of structural capture plates protruding toward the front side of the surface are respectively formed on the first capture plate and the second capture plate.

[0019] As a preferred embodiment, it is characterized in that the gas moving part formed on the first capture plate is formed at the upper part, the center and the lower part, and the gas moving part formed on the second capture plate is formed only at the upper part, thereby guiding the flow of the unreacted gas.

[0020] As a preferred embodiment, it is characterized in that: the first capture plate also includes: a plurality of structural capture plates protruding toward the rear side of the surface.

[0021] As a preferred embodiment, it is characterized in that: the structural capture plate is formed in a manner of having a cross-shaped cross section or a double cross-shaped cross section.

[0022] As a preferred embodiment, it is characterized in that: the second internal capture tower includes: a first capture plate, which is semi-disc-shaped and is equipped with a gas moving part with a plurality of holes perforated in a certain position area at the rear end; a second capture plate, which is semi-disc-shaped and is equipped with a gas moving part with a plurality of holes perforated in a certain position area at the front end; and a flat capture plate, which is installed between a plurality of the first capture plates and the second capture plates stacked along the upper direction so that they are spaced a certain distance apart in the upper and lower directions, and is perforated on the surface to form a plurality of holes; thereby capturing the unreacted gas while staggering the flow of the gas along the upper direction.

[0023] As a preferred embodiment, it is characterized in that: the second internal capture tower extends the flow path of the inflowing unreacted gas by placing the first capture plate at the lowermost end and the second capture plate at the uppermost end, and the planar capture plate is installed across the width direction at the central part of each first capture plate and each second capture plate, and the planar capture plate at the uppermost end is composed of a plurality of planar capture plates.

[0024] As a preferred embodiment, it is characterized in that: the flow path conversion plate includes: a plate body, which is disc-shaped and separates the internal space of the housing body into an upper part and a lower part; and a gas moving part, which is formed in a part area of the plate body and is perforated to form a plurality of holes used as a passage for unreacted gas.

[0025] As a preferred embodiment, it is characterized in that: the grid-type capture part includes: a main body, the lower surface of which is closed and the side surface is formed in a mesh shape for the inflow of unreacted gas, and the upper surface is formed with a mesh-shaped insertion part with a certain depth only at the central part, so that a punched gas guiding part protruding downward from the lower part of the upper housing plate can be inserted; and a grid-type filter, which is housed inside the main body to capture the remaining reaction by-products contained in the inflowing unreacted gas in powder form under low-temperature conditions.

[0026] The reaction by-product multiple capture device for semiconductor engineering applying the present invention with the above characteristics can control the flow direction of the unreacted gas discharged after performing multiple depositions in the process chamber in the semiconductor manufacturing process to form different thin film layers, and at the same time separate the heat distribution area. The capture area separation part can be used as a reference to capture the reaction by-products condensed in film form in the relatively high-temperature area through the first internal capture tower in the front area, and capture the reaction by-products condensed in powder form in the relatively low-temperature area through the second internal capture tower in the rear area, so as to separate and capture the mixed reaction by-products contained in the unreacted gas in one capture device.

[0027] By equipping the multiple capture device as described above, the present invention can simplify the device configuration and process control for semiconductor manufacturing engineering, and at the same time increase its durability to the extent that it can be continuously used for more than six months, thereby reducing the maintenance management cycle of the vacuum pump.

[0028] As described above, the present invention is a useful invention with various advantages and has good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a perspective view illustrating the configuration of a reaction by-product multiple capture device according to an embodiment of the present invention.

[0030] Figure 2 This is a cross-sectional view illustrating the internal structure of a reaction by-product multi-capture device to which one embodiment of the present invention is applied.

[0031] Figure 3 This is an exploded perspective view illustrating the structure of a reaction by-product multi-capture device to which one embodiment of the present invention is applied.

[0032] Figure 4 This is a perspective view illustrating the structure of a housing and a heater to which one embodiment of the present invention is applied.

[0033] Figure 5 This is a perspective view illustrating the structure of a capture area separation unit to which one embodiment of the present invention is applied.

[0034] Figure 6 This is a perspective view illustrating the structure of one side direction of a first internal capture tower to which one embodiment of the present invention is applied.

[0035] Figure 7 This is a perspective view illustrating the structure of the other side direction of a first internal capture tower to which one embodiment of the present invention is applied.

[0036] Figure 8 This is a perspective view illustrating the structure of one side direction of a second internal capture tower to which one embodiment of the present invention is applied.

[0037] Figure 9 This is a perspective view illustrating the structure of the other side direction of a second internal capture tower to which one embodiment of the present invention is applied.

[0038] Figure 10 This is a perspective view illustrating a flow path conversion plate to which one embodiment of the present invention is applied.

[0039] Figure 11 This is a perspective view illustrating a grid-like capture unit to which one embodiment of the present invention is applied.

[0040] Figure 12 This is a schematic view illustrating the capture tendency inside a reaction by-product capture device to which one embodiment of the present invention is applied.

[0041] Figure 13 This is a schematic view illustrating the gas flow inside a reaction by-product capture device to which one embodiment of the present invention is applied.

[0042] (Description of reference numerals)

[0043] 1: Housing 2: Hot and cold type heater

[0044] 3: Capture area separation unit 4: First internal capture tower

[0045] 5: Second internal capture tower 6: Flow path conversion plate

[0046] 7: Mesh-type capture part 11: Outer shell main body

[0047] 11a: Gas inlet 11b: Support piece

[0048] 12: Upper plate 12a: Gas outlet

[0049] 12b: Perforated gas induction part 13: Lower plate

[0050] 13a: Support part 14: Cooling water flow path part

[0051] 14a: Cooling water external pipeline 14b: Lower cooling water flow path

[0052] 21: Power supply part 22: Power pipeline

[0053] 31: Front side partition board 32: Upper partition board

[0054] 33: Gas moving part 34: Combining hole

[0055] 41: First capture plate 42: Second capture plate

[0056] 51: First capture plate 52: Second capture plate

[0057] 53: Planar capture plate 53a: Hole

[0058] 54: Combining hole 55: Combining part

[0059] 61: Plate main body 61a: Combining groove

[0060] 61b: Handle 62: Gas moving part

[0061] 62a: Hole 71: Main body

[0062] 71a: Insertion part 72: Mesh-type filter

[0063] 411, 421: Gas moving part 411a, 421a: Hole

[0064] 412, 422: Structured capture plate 413, 423: Combining part

[0065] 511, 521: Gas moving part 511a, 521a: Hole Detailed implementation mode

[0066] Next, the composition and functions of the embodiments to which the present invention is applicable will be described in detail with reference to the accompanying drawings. In addition, during the description of the present invention, when it is determined that the specific description of the relevant well-known functions or compositions may make the gist of the present invention unclear, the detailed description thereof will be omitted.

[0067] Figure 1 is a perspective view showing the composition of a reaction by-product multi-capture device according to an embodiment to which the present invention is applicable, Figure 2 is a cross-sectional view showing the internal composition of a reaction by-product multi-capture device according to an embodiment to which the present invention is applicable, Figure 3 is an exploded perspective view showing the composition of a reaction by-product multi-capture device according to an embodiment to which the present invention is applicable.

[0068] As shown in the figure, the multi-capture device to which the present invention is applicable is a device for separating the mixed reaction by-products contained in the unreacted gas discharged after performing a multi-layer thin film deposition process in a process chamber (not shown) into different temperature regions, capturing them in the form of a thin film or powder, and then discharging only the remaining gas through a vacuum pump. The multi-capture device includes a housing 1, a hot and cold type heater 2, a capture region separation unit 3, a first internal capture tower 4, a second internal capture tower 5, a flow path conversion plate 6, and a grid type capture unit 7.

[0069] Next, the high temperature or low temperature mentioned in the present invention refers to the relative temperature of the capture temperature when the condensation temperatures in the mixed reaction by-products are different. As an example, the high temperature in the present invention refers to a temperature of 150 °C or higher, and the low temperature refers to a temperature less than 150 °C.

[0070] The housing 1 allows the unreacted gas discharged from the process chamber to flow in laterally and be accommodated therein, and then discharged upward.

[0071] The hot and cold type heater 2 can adjust the temperature of the unreacted gas flowing into the housing.

[0072] The capture region separation unit 3 is disposed inside the housing 1 and can control the flow direction of the incoming unreacted gas while separating the heat distribution region.

[0073] The first internal capture tower 4 is disposed in the front side region of the capture region separation unit 3 and is used to capture the reaction by-products that react and condense into a thin film form in the mixed reaction by-products contained in the incoming unreacted gas in a space region maintained at a relatively higher temperature compared to the rear side region.

[0074] The second internal capture tower 5 is arranged in the rear area of the capture area separation part 3, and is used to capture the reaction by-products that react at a relatively low temperature and condense into a powder form among the mixed reaction by-products contained in the inflowing unreacted gas in a space area where the temperature is maintained lower than that in the front area.

[0075] The flow path conversion plate 6 is arranged above the capture area separation part 3, and is used to convert and extend the flow path direction of the gas after passing through the second internal capture tower 5, so as to capture the remaining reaction by-products that react at a low temperature and condense into a powder form among the mixed reaction by-products contained in the unreacted gas.

[0076] The grid-type capture part 7 captures the remaining reaction by-products that react at a low temperature and condense into a powder form among the mixed reaction by-products contained in the unreacted gas discharged upward through a certain position area of the flow path conversion plate 6, and then discharges only the unreacted gas through the gas discharge port of the upper plate.

[0077] In order to prevent phenomena such as corrosion caused by the unreacted gas discharged from the process chamber in each of the above-mentioned components, most of the components are preferably made of raw materials such as stainless steel or aluminum that can prevent the occurrence of corrosion.

[0078] As an example of the mixed reaction by-products contained in the unreacted gas captured by the reaction by-product multiple capture device applying the present invention with the above-mentioned structure, the mixed reaction by-products contained in the unreacted gas discharged after performing the oxide (Oxide) deposition process, that is, the repeated deposition process of Al2O3 and TiO2 thin films, in a process chamber for manufacturing semiconductors, may be Al2O3 reaction by-products and TiO2 reaction by-products.

[0079] If the applicable process is described for reference, the gases used in the Al2O3 deposition process include trimethylaluminum (TMA), N2, and H2O, and the gases used in the TiO2 deposition process include TiCl4, N2, and H2O.

[0080] When performing the Al2O3 and TiO2 deposition processes in the process chamber using the above-mentioned process gases and precursors, non-volatile reaction by-products will be formed. The reaction formulas of the thin film deposition process are as follows.

[0081] (a) 2Al(CH3)3 + H2O / O3 → Al2O3(s) + 3C2H6(g)↑

[0082] (b) TiCl4(g) + H2O(g) → TiO2(s) + HCl(g)↑

[0083] Therefore, the multiple capture device needs to be equipped with a configuration that can agglomerate the mixed reaction by-products of Al2O3 and TiO2 contained in the unreacted gas using one capture device and form a film or powder form.

[0084] However, since the temperature regions in which the mixed reaction by-products of Al2O3 and TiO2 can be agglomerated and captured are different from each other, the multiple capture device to which the present invention is applied adopts a configuration that separates the capture spaces for the reaction by-products in the form of a film and powder, and seals the heat of the unreacted gas heated by a heater, so that Al2O3 and TiO2 can be captured simultaneously in one capture device.

[0085] For this purpose, in the front high-temperature region provided with a relatively high temperature by a heater, the Al2O3 reaction by-products are captured in the form of a film, and in the rear low-temperature region, the TiO2 reaction by-products are captured in the form of powder.

[0086] In addition, by expanding the flow path, an effective capture configuration is included that can capture as much of the remaining mixed reaction by-products as possible before discharge.

[0087] Next, each configuration will be described in detail.

[0088] Figure 4 It is a perspective view showing the configuration of the housing and the heater to which one embodiment of the present invention is applied.

[0089] As shown in the figure, the housing 1 includes: a housing main body 11, which forms a gas inlet 11a on the side for accommodating the inflowing unreacted gas; an upper plate 12, which forms a gas outlet 12a above and protrudes a punched gas guiding portion 12b below; a lower plate 13, which can be firmly combined with the capture area separation portion 3, the first internal capture tower 4, and the second internal capture tower 5 and provides support; and a cooling water flow path portion 14, which is installed on the upper plate 12 to cool and adjust the temperature of the upper plate and the outer surface of the housing.

[0090] In addition, a hot and cold type heater 2 is installed in such a way as to provide a heat source from the inside of the housing main body to the side direction, and the external water pipe 14a of the cooling water of the cooling water flow path portion 14 installed on the upper plate 12 of the housing is connected and circulated with a lower cooling water flow path 14b formed in a groove structure flow cycle of the hot and cold type heater 2 installed outside the housing main body 11, so as to adjust the temperature of the outer surface of the housing main body.

[0091] The housing main body 11, upper plate 12, and lower plate 13 illustrated as an embodiment are cylindrical, but the present invention is not limited to the above-described shape and may be formed in a required shape such as a square tube shape or a polygonal tube shape. However, in the following description of the present invention, the description will be based on the cylindrical shape for convenience of explanation.

[0092] The housing main body 11 has a hollow box shape and can function to store the inflowing unreacted gas in order to agglomerate and capture the mixed reaction by-products contained in the inflowing unreacted gas in the form of a film or powder through the capture area separator 3, first internal capture tower 4, second internal capture tower 5, flow path conversion plate 6, and grid-type capture part 7 installed inside it.

[0093] The gas inlet 11a installed on the side of the housing main body 11 forms a gas flow that is discharged through the gas outlet 12a formed above the upper plate 12 by supplying the flow of the inflowing unreacted gas in the horizontal direction. The gas inlet can fix the joint by processing and welding or other known joining methods according to the side shape of the housing main body formed with a certain curvature. As the installation position, it can be installed in various positions, and preferably, it can be installed according to the capture plate and gas flow path of the first internal capture tower 4 installed inside the housing main body.

[0094] In addition, a power supply unit 21 for supplying power to the hot and cold type heater 2 is installed outside the housing main body 11, so as to control the temperature by supplying power. At this time, the cooling water external pipe 14a of the cooling water flow path unit 14 is connected and circulated with the cooling water flow path unit 14b formed in the groove structure circulation flow path form of the power supply unit 21 of the hot and cold type heater 2 outside the housing main body, so as to adjust the temperature of the outer surface of the housing main body.

[0095] In addition, a plurality of support pieces 11b for resting and fixing the flow path conversion plate 6 are formed along the inner wall of the housing main body 11 around the inner wall. In one illustrated embodiment, the method of bolt-bonding to the support pieces through a plurality of engaging grooves formed along the periphery of the flow path conversion plate 6 is illustrated. However, in addition to the above-described method, various known bonding methods including welding can also be used for bonding.

[0096] The upper plate 12 not only serves as a lid to cover the upper part of the open outer shell body 11, but also discharges the unreacted gas that has completed the capture of the mixed reaction by-products to the side of the vacuum pump through the gas discharge port 12a. At this time, the perforated gas guiding part 12b installed at the lower part protrudes and inserts into the central part of the grid-type capture part 7, thereby guiding the unreacted gas passing through the surrounding grid-type capture part to the gas discharge port protruding above the upper plate at the central part.

[0097] In addition, a cooling water flow path part 14 is formed in a groove shape on the upper surface of the upper plate 12 to prevent the deformation of an O-ring (not shown) installed below the upper plate when heating the internal space of the outer shell body 11 and to provide an appropriate temperature area for capturing the reaction by-products in the upper area of the outer shell body. At this time, a flow path cover is used to cover the upper part of the cooling water flow path part formed with the groove. Although not shown, the flow path cover can be combined in a way that includes a sealing process to achieve watertightness, and a known technique such as an embedding method, a welding method, or a bolt connection method can be used for its combination method.

[0098] The lower plate 13 can serve as a lid to cover the open lower part of the outer shell body 11 and at the same time form a support part 13a protruding on the upper surface to fix the first internal capture tower 4, the second internal capture tower 5, and the flow path conversion plate 6 located above it. As a fixing method, a method of inserting a coupling rod into the coupling parts or coupling holes respectively formed in the first internal capture tower 4, the second internal capture tower 5, and the capture area separation part 3 and screwing it to the support part can be used. However, the above-described coupling method is only a preferred embodiment, and various known coupling methods such as an embedding method and a welding method can also be used for coupling.

[0099] Mobile wheels or the like can be installed on the lower surface of the lower plate, so that the capture device can be easily moved to the required position. In addition, a fixed type structure in which the lower plate is fixed to the factory floor or frame can also be adopted.

[0100] The cooling water flow path part 14 is formed on the upper plate 12 and is equipped with a cooling water inlet and a cooling water outlet, so that the cooling water supplied from an external cooling water tank (not shown) can be circulated and discharged through the cooling water flow path formed on the upper plate.

[0101] In addition, the cooling water flow path portion 14 is configured such that cooling water circulates through the external cooling water pipe 14a and then is discharged through the cooling water discharge port after circulating through the cooling water flow path 14b formed in a groove structure at the lower part of the power supply unit 21 to protect the wires for supplying power to the hot and cold type heater 2. To prevent leakage during the circulation of the cooling water, the groove structure of the cooling water flow path 14b will be sealed with a lid.

[0102] By adopting the circulation structure that organically connects the flow path of the cooling water as described above with the hot and cold type heater, it is possible to prevent the outer surface of the housing from being heated by the high-temperature heater.

[0103] In addition, when a structure is adopted in the cooling water flow path portion 14 formed on the upper plate where the cooling water flows in through the cooling water inlet and then is discharged through the cooling water discharge port, in order to prevent the inflowing cooling water and the discharged cooling water from mixing with each other, it is formed in a manner having a boundary portion.

[0104] As the cooling water used in the cooling water flow path portion, water or a refrigerant can be used.

[0105] The hot and cold type heater 2 can generate heat when powered from the power supply unit 21, and by using the diffuser structure (diffusion structure) equipped in the heater, it heats the temperature of the inflowing unreacted gas through the gas inlet 11a installed on the side of the housing main body 11.

[0106] In addition, the hot and cold type heater 2 connects the lower cooling water flow path 14b around the power pipe 22 connected to the power supply unit 21 to the external cooling water pipe 14a of the cooling water flow path portion 14, so as to conduct heat during the circulation of the cooling water and thereby adjust the temperature of the outer surface of the housing.

[0107] The hot and cold type heater 2 is attached and installed on one side of the inner wall of the housing main body in a state parallel to the gas inlet 11a communicated with the housing main body 11 by means of bonding such as bolts or welding. The heat source of the hot and cold type heater 2 can generate heat at a set temperature when power is loaded onto the power line inside the electric heating pipe. As the material of the hot and cold type heater 2, raw materials such as ceramics or Inconel can be used to prevent corrosion caused by the inflowing gas.

[0108] The hot and cold type heater 2 configured as described above can prevent the unreacted gas discharged from the process chamber from condensing and clogging when flowing in through the gas inlet 11a, and when reaching the first internal capture tower 4, it captures the solid reaction by-products that react and condense at a relatively high temperature in the mixed reaction by-products contained in the unreacted gas in the form of a thin film.

[0109] Figure 5 It is a perspective view showing the structure of the capture area separation part to which one embodiment of the present invention is applied.

[0110] As shown in the figure, the capture area separation part 3 includes: a front partition plate 31 that separates the reaction by-product capture space by enclosing the heat of the unreacted gas flowing in after being heated by the heat and cold type heater 2 and controlling its flow direction; an upper partition plate 32 that blocks the upper part of the front partition plate to block the upward flow of the unreacted gas flowing in; and a gas movement part 33 that is formed at the lower part of the front partition plate 31 to induce the flow of the unreacted gas to the lower part for discharge.

[0111] The front partition plate 31 is preferably configured in the form of a square plate and has a left and right width equivalent to the inner diameter of the housing main body to play a sealing role.

[0112] The upper partition plate 32 is formed in a semicircular shape with a diameter equivalent to the inner diameter of the housing main body to seal the upper part of the front area where the capture space is separated by the front partition plate 31.

[0113] In addition, a coupling hole 34 may be formed in the upper partition plate, so as to be coupled by inserting a coupling rod into a support part 13a formed on the lower plate 13 and screwing it to the support part. However, the above-described coupling method is only a preferred embodiment, and it may also be coupled by various known coupling methods such as an embedding method and a welding method.

[0114] The gas movement part 33 is used to discharge the unreacted gas containing the remaining reaction by-products downward after capturing the reaction by-products that can be captured in a thin film form in a relatively high-temperature environment among the mixed reaction by-products contained in the unreacted gas during the movement through the first internal capture tower 4 installed in the front area of the front partition plate. At this time, the gas movement part is preferably configured in an open shape in order to smoothly discharge while reducing the resistance caused by the wind force of the gas flowing into the gas inlet. However, it may also be composed of multiple holes.

[0115] Figure 6 It is a perspective view showing the structure of one side direction of the first internal capture tower to which one embodiment of the present invention is applied, Figure 7 It is a perspective view showing the structure of the other side direction of the first internal capture tower to which one embodiment of the present invention is applied.

[0116] As shown in the figure, the first internal capture tower 4 is composed of one or more capture plates formed along the horizontal direction, which are located in the front region where the capture region is separated by the capture region separation unit 3 according to temperature, and guide the flow of the gas upward and downward by facing the incoming unreacted gas. At the same time, the reaction by-products contained in the unreacted gas are captured in the form of a thin film in the high-temperature region.

[0117] As an embodiment, the present invention is composed of a first capture plate 41 located in the front and a second capture plate 42 located at a certain interval therefrom, so as to perform capture on the surface.

[0118] The first capture plate 41 and the second capture plate 42 respectively guide the flow of the unreacted gas upward and downward through gas movement parts 411 and 421 formed with a plurality of holes 411a and 421a by perforating on the surface above a certain position area, so as to capture the reaction by-products in the form of a thin film while extending the residence time and providing a longer reaction time.

[0119] As an embodiment of the gas movement part 411 formed on the first capture plate 41, it is preferably formed in the upper, central, and lower parts, and more holes 411a are preferably formed on one side of the lower part. Due to the upper holes of the second capture plate 42, the flow of the gas may be concentrated on the upper side. In the above situation, problems such as less formation of eddy currents based on the flow velocity difference due to the imbalance of the gas flow path and a large deviation in temperature drop leading to a decrease in capture performance may occur. Therefore, it is preferably formed in the upper, central, and lower parts.

[0120] In addition, as an embodiment of the gas movement part 421 formed on the second capture plate 42, it is preferably formed only in the upper part. By forming in the above manner, a gas flow that induces the unreacted gas to move upward can be formed by the main flow formed in the lower part of the first capture plate 41, the gas residence time can be extended by increasing the gas flow path length, and the capture efficiency can be improved by enhancing the eddy current formation efficiency based on the flow velocity difference. It is advisable to form the holes 421a formed in the upper gas movement part 421 of the second capture plate 42 to be relatively larger in size than the holes formed on the first capture plate 41 to reduce the resistance of the unreacted gas.

[0121] A plurality of structural capture plates 412 and 422 protruding in the front side direction of the surface are respectively formed on the first capture plate 41 and the second capture plate 42.

[0122] In addition, the first capture plate 41 may further include: a plurality of structured capture plates 412 that protrude in the rearward direction on the facing surface. By adopting the above-described configuration, it is possible to increase the formation of eddy currents between the structured capture plate 412 formed at the rear side of the first capture plate 41 and the structured capture plate 422 formed at the front side of the second capture plate 42, thereby improving the capture efficiency of reaction by-products.

[0123] In order to efficiently capture the mixed reaction by-products contained in the inflowing unreacted gas, the above-described structured capture plates 412 and 422 are preferably formed with a cross-sectional shape or a double cross-sectional shape having an eddy current formation structure, so as to increase the surface area and capture time per unit area.

[0124] In addition, compared with the structured capture plate 412 formed at the rear side, more structured capture plates 422 can be formed at the front side, thereby playing a main capture role.

[0125] The capture in the first internal capture tower 4 is performed at the front and rear sides of the first capture plate 41 and the second capture plate 42 and in the structured capture plates 412 and 422.

[0126] Engaging portions 413 and 423 are formed at the rear sides of the first capture plate 41 and the second capture plate 42, respectively, so as to be engaged with the support portion 13a formed on the lower plate of the outer shell. As an engaging method, it is possible to adopt a method of inserting an engaging rod into the engaging portions 413 and 423 and screwing them to the support portion. However, the above-described engaging method is only a preferred embodiment, and it is also possible to perform the engagement by various known engaging methods such as an embedding method and a welding method.

[0127] The first internal capture tower 4 configured as described above is located in the front region of the capture area separation unit 3, so that the moving flow of the inflowing unreacted gas moves up and down in a space region that maintains a relatively high temperature compared to the rear region, thereby efficiently capturing the reaction by-products that react at a high temperature and condense in a thin film form among the mixed reaction by-products contained in the unreacted gas on the front and rear planes of the first capture plate 41 and the second capture plate 42 of the first internal capture tower 4 and in the structured capture plates 412 and 422.

[0128] Figure 8 It is a perspective view showing the configuration of one side direction of the second internal capture tower to which one embodiment of the present invention is applied. Figure 9 It is a perspective view showing the configuration of the other side direction of the second internal capture tower to which one embodiment of the present invention is applied.

[0129] As shown in the figure, the second internal capture tower 5 is composed of capture disks which are arranged in a vertically stacked manner at a certain interval through a plurality of planar capture plates in the vertical direction. The capture disks are located in the rear area where the capture area is separated by the capture area separation unit 3 according to temperature, and the flow of the gas is staggered and redirected along the upper direction by facing the incoming unreacted gas. At the same time, the reaction by-products contained in the unreacted gas are captured in powder form in the low-temperature area.

[0130] As an embodiment, when taking the semi-circular disk shape with a line segment at the front end and an arc shape at the rear end as a reference in the present invention, it includes: a first capture plate 51, in a semi-circular disk shape, equipped with a gas moving part 511 formed with a plurality of holes 511a perforated in a certain position area at the rear end;

[0131] a second capture plate 52, in a semi-circular disk shape, equipped with a gas moving part 521 formed with a plurality of holes 521a perforated in a certain position area at the front end; and,

[0132] a planar capture plate 53, which is installed between the plurality of first capture plates 51 and the second capture plates 52 stacked in the upper direction, so that it is spaced at a certain interval in the up and down direction, and a plurality of holes 53a are formed by perforating on the surface.

[0133] By adopting the above-described structure, the gas moving parts 511 and the gas moving part 521 located at the upper and lower parts can be alternately formed, so as to guide the flow of the unreacted gas in the staggered direction.

[0134] Preferably, the semi-circular disk-shaped first capture plate 51 with the gas moving part 511 formed with a plurality of holes 511a perforated in a certain position area at the rear end can be located at the lowermost end, and the semi-circular disk-shaped first capture plate 52 with the gas moving part 521 formed with a plurality of holes 521a perforated in a certain position area at the front end can be located at the uppermost end. By adopting the above-described structure, the flow path of the unreacted gas flowing into the lower part through the lower gas moving part 33 of the capture area separation unit 3 can be extended and moved to as far a position as possible and then move upward, thereby improving the residence time and the capture efficiency.

[0135] The planar capture plate 53 is installed in a manner that spans the width direction at the central part of each first capture plate 51 and each second capture plate 52, so that eddy currents are formed again when the unreacted gas passing through each gas moving part 511 and the gas moving part 421 and moving upward moves in the horizontal direction, and more reaction by-products are captured in powder form in a low-temperature environment during the movement of the flow path on the extended surface and move and rise in a staggered manner.

[0136] In addition, the planar capture plate 53 located at the uppermost end may be composed of a plurality of additional planar capture plates 53, so as to move to the flow path conversion plate 6 after improving the replenishment efficiency by forming multiple eddy currents.

[0137] At a plurality of positions of the first capture plate 51 and the second capture plate 52 stacked with a movement interval in the vertical direction, coupling holes 54 and a rod-shaped coupling portion 55 penetrating through the coupling holes 54 vertically are formed, and are coupled to a support portion 13a formed on the lower plate of the housing thereby.

[0138] As a coupling method, a method of inserting the lower portion of the coupling portion 54 at each position into the support portion and coupling with screws can be adopted. However, the coupling method described above is only a preferred embodiment, and it can also be coupled by various known coupling methods such as an embedding method and a welding method.

[0139] The second internal capture tower 5 configured as described above is disposed in the rear region of the capture area separation portion 3, and is used to capture reaction by-products that react at a relatively low temperature and condense into a powder form in the mixed reaction by-products contained in the inflowing unreacted gas in a space region maintained at a lower temperature compared to the front region.

[0140] Figure 10 It is a perspective view showing a flow path conversion plate to which an embodiment of the present invention is applied.

[0141] As shown in the figure, the flow path conversion plate 6 includes: a plate main body 61, which is disc-shaped and seals the internal space of the housing main body to the maximum extent and separates it into an upper part and a lower part; and a gas movement part 62, which is formed in a part area of the plate main body and is perforated to form a plurality of holes 62a used as a passage for unreacted gas.

[0142] Preferably, the outer diameter of the plate main body 61 corresponds to the inner diameter of the housing main body, but it can be manufactured in the closest size for assembly.

[0143] When fixing the plate main body, after placing it on a plurality of support pieces 11b provided along the inner wall periphery of the housing main body 11, bolts can be inserted into coupling grooves 61a formed correspondingly along the periphery of the plate main body for coupling. However, in addition to the above-described method, it can also be coupled by various known coupling methods including welding.

[0144] In addition, when inserting the plate main body 61 into the housing, the handle 61b formed on its upper side can be used.

[0145] The flow path conversion plate 6 configured as described above is located above the capture area separation part 3. Thus, after blocking the flow path of the unreacted gas moving upward through the second internal capture tower 5 by using the plate body 61 without the gas movement part 62 formed thereon to convert the flow path direction of the gas flow and extend it, it guides the unreacted gas to be discharged upward through the gas movement part 62 having a plurality of holes 62a formed by perforation.

[0146] At this time, the flow path conversion plate can not only play the role of converting the direction of the unreacted gas and extending the flow path, but also play the role of capturing again the remaining reaction by-products that react at low temperature and agglomerate in powder form among the mixed reaction by-products contained in the unreacted gas.

[0147] Figure 11 It is a perspective view showing a grid-like capture part to which one embodiment of the present invention is applied.

[0148] As shown in the figure, the grid-type capture part 7 includes: a main body 71, the lower surface of which is closed and the side surface is formed in a mesh shape through which unreacted gas can flow in, and the upper surface is formed with a mesh-shaped insertion part 71a having a certain depth only at the central part, so that it can be inserted into the punched gas induction part 12b protruding downward from the upper plate 12 of the housing; and a grid-type filter 72, which captures the remaining reaction by-products contained in the unreacted gas flowing in in powder form under low-temperature conditions by being housed inside the main body.

[0149] Regarding the main body 71, it can be combined with the lower part of the upper plate of the housing by a plurality of engaging members formed around its upper side surface. However, the present invention is not limited to the above-described manner, and it can also be combined by one of various known combining methods such as embedding and welding.

[0150] The grid-type filter 72 can be formed in the form of grid-type fibers or the like, so that the unreacted gas moves through the complex and intersecting internal air holes and thereby captures the remaining reaction by-products carefully again.

[0151] The grid-type capture part 7 configured as described above can make the unreacted gas discharged to the upper part through a certain position area of the flow path conversion plate 6 flow in from the side, and capture the remaining reaction by-products that react at low temperature and agglomerate in powder form among the mixed reaction by-products contained in the unreacted gas by the grid-type filter 72 housed inside. Next, only the unreacted gas flows into the punched gas induction part 12b from the side through the mesh-shaped insertion part 71a formed at the central part, and then is discharged through the gas discharge port 12a of the upper plate 12 located above.

[0152] In the reaction by-product multiple capture device applicable to the present invention configured as described above, when the unreacted gas discharged from the process chamber is supplied to the inside of the housing body 11 through the side of the housing 1, the capture area separation part 3 that controls the flow direction of the unreacted gas and separates the heat distribution area in order to separate the capture area of the unreacted gas heated by the heater 2 can be used. In the front area, the first internal capture tower 4 captures the reaction by-products that condense in the form of a thin film in the relatively high-temperature area while moving up and down, and in the rear area, the second internal capture tower 5 captures the reaction by-products that condense in the form of powder in the relatively low-temperature area while moving in a staggered manner from the lower part to the upper part.

[0153] Then, during the process of passing through the flow path conversion plate 6 again, the remaining reaction by-products are carefully captured through the extended flow path and the mesh filter of the mesh-type capture part 7 and then discharged.

[0154] Figure 12 It is a schematic diagram showing the capture tendency inside the reaction by-product capture device according to an embodiment of the present invention. Figure 13 It is a schematic diagram showing the gas flow inside the reaction by-product capture device according to an embodiment of the present invention.

[0155] Figure 12 In (A), it is the capture area of the reaction by-products, in (B), it is the area mainly for capturing Al2O3 in the mixed reaction by-products, and in (C), it is the area mainly for capturing TiO2 in the mixed reaction by-products. In addition, Figure 13 in (D) represents the gas flow path. In addition, for the components not mentioned in the following description, please refer to the description of Figures 1 to 11 .

[0156] As shown in the figure, it can be found that in the reaction by-product multiple capture device applicable to the present invention configured as described above, by providing the capture area separation part 3 that controls the flow direction of the unreacted gas flowing into the inside and separates the heat distribution area at the same time, it shows the capture tendency and gas flow that in the front area, the first internal capture tower 4 captures the reaction by-products that condense in the form of a thin film in the relatively high-temperature area while moving up and down, and in the rear area, the second internal capture tower 5 captures the reaction by-products that condense in the form of powder in the relatively low-temperature area while moving in a staggered manner from the lower part to the upper part.

[0157] The present invention is not limited to the specific preferred embodiments described above. Without departing from the gist of the present invention claimed in the claims, those with ordinary knowledge in the technical field to which the present invention pertains can make various modified implementations, and such modifications are included within the scope described in the claims.

Claims

1. A multi-capture device for reaction by-products in semiconductor engineering, characterized in that: As a device for capturing mixed reaction by-products contained in unreacted gas discharged after performing a multi-layer thin film deposition process in a process chamber during semiconductor manufacturing engineering, it includes: A capture area separation part (3), arranged inside the housing (1), controls the flow of the incoming unreacted gas by heating with a hot and cold type heater (2) and thereby separates the heat distribution area; A first internal capture tower (4), arranged in the front area of the capture area separation part (3), for capturing reaction by-products that react at a relatively high temperature in the mixed reaction by-products contained in the incoming unreacted gas in the form of a thin film; A second internal capture tower (5), arranged in the rear area of the capture area separation part (3), for capturing reaction by-products that react at a relatively low temperature in the mixed reaction by-products contained in the incoming unreacted gas in the form of powder in a space area maintained at a lower temperature compared to the front area; thereby separating different areas in one device to capture the mixed reaction by-products contained in the unreacted gas; and A flow path conversion plate (6), arranged on the upper part of the capture area separation part (3), converts and extends the flow path direction of the gas after passing through the second internal capture tower (5), thereby capturing the remaining reaction by-products contained in the unreacted gas.

2. The multi-capture device for reaction by-products in semiconductor engineering according to claim 1, characterized in that: The housing (1) includes: a housing main body (11) having a gas inlet (11a) formed on the side for receiving the incoming unreacted gas; an upper plate (12) having a gas outlet (12a) formed on the upper side and having a punched gas guiding part (12b) protruding downward; a lower plate (13) for firmly connecting and supporting the capture area separation part (3), the first internal capture tower (4), and the second internal capture tower (5); and a cooling water flow path part (14) for cooling and adjusting the temperature of the upper plate and the outer surface of the housing by being installed on the upper plate (12).

3. The multi-capture device for reaction by-products in semiconductor engineering according to claim 1, characterized in that: The hot and cold type heater (2) connects the lower cooling water flow path (14b) around the power supply pipe (22) connected to the power supply part (21) to the external cooling water pipe (14a) of the cooling water flow path part (14), thereby conducting heat during the cooling water circulation and thereby adjusting the temperature of the outer surface of the housing.

4. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, wherein It further includes: A grid type capture part (7) for capturing the remaining reaction by-products contained in the unreacted gas discharged upward through a certain position area of the flow path conversion plate (6), and then discharging only the unreacted gas through the gas outlet of the upper plate.

5. The multi-capture device for reaction by-products in semiconductor engineering according to claim 1, characterized in that: The capture area separation part (3) includes: The front partition plate (31) separates the reaction by-product capture space by enclosing the heat of the unreacted gas flowing in after heating and controlling the flow direction thereof; The upper partition plate (32) blocks the upper part of the front partition plate to block the upward flow of the unreacted gas flowing in; and, The gas moving part (33) is formed at the lower part of the front partition plate (31) to induce the flow of the unreacted gas to the lower part for discharge.

6. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, characterized in that: The first internal capture tower (4) is composed of a first capture plate (41) located in the front and a second capture plate (42) located at a certain interval therefrom, The first capture plate (41) and the second capture plate (42) respectively guide the flow of the unreacted gas in the up and down directions through gas moving parts (411, 421) formed with a plurality of holes (411a, 421a) by perforating on the surface above a certain position area, A plurality of structured capture plates (412, 422) protruding in the front side direction of the surface are respectively formed on the first capture plate (41) and the second capture plate (42).

7. The reaction by-product multiple capture device for semiconductor engineering according to claim 6, characterized in that: The gas moving part (411) formed on the first capture plate (41) is formed at the upper part, the center and the lower part, and the gas moving part (421) formed on the second capture plate (42) is only formed at the upper part to guide the flow of the unreacted gas.

8. The reaction by-product multiple capture device for semiconductor engineering according to claim 6, characterized in that: The first capture plate (41) further includes: a plurality of structured capture plates (412) protruding in the rear side direction of the surface.

9. The reaction by-product multiple capture device for semiconductor engineering according to claim 7, characterized in that: The structured capture plates (412, 422) are formed in a way that they have a cross-sectional shape or a double cross-sectional shape.

10. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, characterized in that: The second internal capture tower (5) includes: A first capture plate (51) in a semi-circular disk shape, equipped with a gas moving part (511) formed with a plurality of holes (511a) by perforating at a certain position area at the rear end; A second capture plate (52) in a semi-circular disk shape, equipped with a gas moving part (521) formed with a plurality of holes (521a) by perforating at a certain position area at the front end; and, A planar capture plate (53) is installed between the first capture plates (51) and the second capture plates (52) stacked in the upper direction so as to be at a certain interval in the up and down directions, and a plurality of holes (53a) are formed by perforating on the surface; thereby capturing while alternately converting the flow of the unreacted gas in the upper direction.

11. The reaction by-product multiple capture device for semiconductor engineering according to claim 10, characterized in that: The second internal capture tower (5) extends the flow path of the inflowing unreacted gas by positioning the first capture plate (51) at the lowermost end and the second capture plate (52) at the uppermost end. The planar capture plates (53) are installed so as to span the width direction at the central portions of the respective first capture plates (51) and the respective second capture plates (52), and the planar capture plate (53) at the uppermost end is composed of a plurality of planar capture plates (53).

12. The reaction by-product multi-capture device for semiconductor engineering according to claim 1, wherein: The flow path conversion plate (6) includes: a plate main body (61) having a disk shape that separates the internal space of the housing main body into an upper portion and a lower portion; and a gas movement portion (62) formed in a part of the plate main body and having a plurality of holes (62a) formed therethrough and used as a passage for unreacted gas.

13. The reaction by-product multi-capture device for semiconductor engineering according to claim 4, wherein: The grid-type capture portion (7) includes: a main body (71) having a closed lower surface and a side surface formed in a mesh shape through which unreacted gas can flow in, and an upper surface having a mesh-shaped insertion portion (71a) formed only at the central portion with a certain depth, so that a punched gas guide portion (12b) protruding downward from the lower portion of the housing upper plate (12) can be inserted; and a grid-type filter (72) that captures the remaining reaction by-products contained in the inflowing unreacted gas in powder form under low-temperature conditions by being housed inside the main body.

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