Deep ultraviolet light emitting diode epitaxial structure, preparation method and light emitting device

Abstract

The application discloses a deep ultraviolet light emitting diode epitaxial structure, a preparation method and a light emitting device. The semiconductor light emitting diode comprises a substrate, a first AlN layer, a second AlN layer, an Al a Ga 1‑a N / AlN / Al b Ga 1‑b N transition layer, an N-type Al c Ga 1‑c N ohmic contact layer, a first quantum barrier layer, an Al y Ga 1‑y N / Al x Ga 1‑x N multi-quantum well active layer, an Al z Ga 1‑z N second quantum barrier layer, a multi-period P-type Al d Ga 1‑d N / Al e Ga 1‑e N electron blocking layer and a P-type Al f Ga 1‑f N ohmic contact layer. The multi-period P-type Al d Ga 1‑d N / Al e Ga 1‑e N electron blocking layer can improve the half-width of the light emitting spectrum, and can also make more carriers effectively radiate and recombine in the multi-quantum well light emitting region, so that the deep ultraviolet light emitting diode epitaxial structure has high light emitting efficiency and purity.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of light-emitting diodes, in particular to a deep ultraviolet light-emitting diode epitaxial structure, a preparation method and a light-emitting device. BACKGROUND

[0002] In recent years, due to the solid-state semiconductor deep ultraviolet (UVB and UVC ) LED The light source has the characteristics of safety, small size, environmental protection, high efficiency and low energy consumption, and is widely used in medical treatment, food processing, bacteria killing and other fields. The main material of UVB LED and UVC LED is AlGaN compound semiconductor. In order to reduce the manufacturing cost of UVB LED and UVC LED, sapphire is mainly used as the substrate of MOCVD epitaxy process in related technologies.

[0003] Due to the lattice and thermal mismatch, using sapphire as the substrate of MOCVD epitaxy process will cause the crystalline quality of AlGaN material to be poor, especially as the wavelength of the multi-quantum well active region can emit near UVB band and below UVC band, the composition of p-type AlGaN required in the structure of UVB LED and UVC LED also needs to be increased.

[0004] However, as the composition of AlGaN increases, the P-type doping carrier concentration of the AlGaN epitaxial layer is more difficult to improve, when the electron concentration and hole concentration injected into the multi-quantum well active region are unevenly distributed, in addition to the fact that the effective radiation recombination probability of the multi-quantum well in the active region cannot be increased to increase the internal quantum efficiency, the excess electrons that do not participate in the effective radiation recombination of the multi-quantum well active region are easy to escape from the active layer and overflow to the p-epitaxial layer to produce additional radiation recombination, which will also cause the parasitic light spectrum of the long wavelength to occur, and the parasitic light spectrum and the light spectrum generated by the active region will be combined to increase the full width at half maximum of the electrically excited light spectrum of the UVB LED and UVC LED, and further cause the insufficient purity of the UVB LED and UVC LED light emission. SUMMARY

[0005] Therefore, the present application provides a deep ultraviolet light-emitting diode epitaxial structure, a preparation method and a light-emitting device, the deep ultraviolet light-emitting diode epitaxial structure has a multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer, which can make the deep ultraviolet light-emitting diode epitaxial structure have high light-emitting efficiency and light-emitting purity.

[0006] To solve the above technical problems, the present application has the following technical solutions:

[0007] In a first aspect, the present application provides a deep ultraviolet light emitting diode epitaxial structure, comprising:

[0008] a substrate;

[0009] a first AlN layer located on one side surface of the substrate;

[0010] a second AlN layer located on the side of the first AlN layer away from the substrate;

[0011] an Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer located on the side of the second AlN layer away from the substrate;

[0012] an Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer located on the side of the Al c Ga 1-c N ohmic contact layer away from the substrate;

[0013] an Al c Ga 1-c N ohmic contact layer located on the side of the N-type Al x Ga 1-x N ohmic contact layer away from the substrate;

[0014] an Al x Ga 1-x N first quantum barrier layer located on the side of the Al y Ga 1-y N first quantum barrier layer away from the substrate; x Ga 1-x N multi-quantum well active layer;

[0015] an Al y Ga 1-y N / Al x Ga 1-x N multi-quantum well active layer located on the side of the Al z Ga 1-z N second quantum barrier layer away from the substrate;

[0016] a multi-period P-type Al z Ga 1-z N / Al d Ga 1-d N / Al eGa 1-e N electron blocking layer, wherein the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e The T layer groups of the N electron blocking layer comprise:

[0017] The multi-period P-type Al d Ga 1-d N / Al e Ga 1-e The P-type Al f Ga 1-f N ohmic contact layer is located on the side of the substrate.

[0018] Optionally, the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e Each of the T layer groups of the N electron blocking layer comprises one Al d Ga 1-d N layer and one Al e Ga 1-e N layer, 3≤T≤10, T is a positive integer;

[0019] The Al d Ga 1-d N layer and the Al e Ga 1-e N layer are arranged alternately.

[0020] Optionally, the T layer groups comprise T1 first layer groups and T2 second layer groups, T1+T2=T, and T1

[0021] The thickness of the Al d Ga 1-d N layer of the first layer group is greater than the thickness of the Al d Ga 1-d N layer of the second layer group, and / or the thickness of the Al e Ga 1-e N layer of the first layer group is greater than the thickness of the Al e Ga 1-e N layer of the second layer group.

[0022] The second layer group is located on the side of the first layer group away from the second quantum barrier layer.

[0023] Optionally, the multi-period P-type Al d Ga 1-d N / Al e Ga 1-eIn the N electron blocking layer, 0.6≤d≤0.7, 0.3≤e≤0.5.

[0024] Optionally, the Al d Ga 1-d N layer in each layer group has a thickness of 2-6 nm, and the Al e Ga 1-e N layer in each layer group has a thickness of 4-12 nm. d Ga 1-d N / Al e Ga 1-e N electron blocking layer has a thickness of less than 100 nm.

[0025] Optionally, the Al d Ga 1-d N layer in each layer group has a thickness of 2-6 nm, and the Al e Ga 1-e N layer in each layer group has a thickness of 4-12 nm.

[0026] Optionally, the Al d Ga 1-d N layer in the first layer group has a thickness of 4 nm, and the Al e Ga 1-e N layer in the first layer group has a thickness of 8 nm.

[0027] The Al d Ga 1-d N layer in the second layer group has a thickness of 2 nm, and the Al e Ga 1-e N layer in the first layer group has a thickness of 4 nm.

[0028] Optionally, the first AlN layer is a low-temperature AlN layer, and the second AlN layer is a high-temperature AlN layer.

[0029] In a second aspect, the application further provides a preparation method of a deep ultraviolet light emitting diode epitaxial structure, for preparing the deep ultraviolet light emitting diode epitaxial structure provided in the first aspect of the application, the method comprising:

[0030] providing a sapphire substrate;

[0031] placing the sapphire substrate into a reaction cavity of a MOCVD machine, increasing the temperature in the reaction cavity to 800℃, and introducing TMAl, NH3 and H2 into the reaction cavity under a pressure of 50 Torr in the reaction cavity to form a first AlN layer on the surface of the substrate;

[0032] The temperature in the reaction chamber is raised to 1270°C, TMAl, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr, and a second AlN layer is formed on the surface of the first AlN layer;

[0033] The temperature in the reaction chamber is lowered to 1170°C, TMAl, TMGa, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr, and the surface of the second AlN layer, which faces away from the substrate, forms an Al a Ga 1-a N / AlN / Al b Ga 1-b N multilayer structure transition layer;

[0034] The temperature in the reaction chamber is lowered to 1070°C, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr, and the surface of the Al a Ga 1-a N / AlN / Al b Ga 1-b N multilayer structure transition layer, which faces away from the substrate, forms an N-type Al c Ga 1-c N ohmic contact layer;

[0035] The temperature in the reaction chamber is lowered to 1000°C, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr, and the surface of the N-type Al c Ga 1-c N ohmic contact layer, which faces away from the substrate, forms an Al y Ga 1-y N / Al x Ga 1-x N multiquantum well active layer, wherein TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction chamber for the first time, and the surface of the N-type Al c Ga 1-c N ohmic contact layer, which faces away from the surface of the substrate, is an Al x Ga 1-x N first quantum barrier layer;

[0036] The temperature in the reaction chamber is maintained at 1000°C, TMAl, TMGa, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr, and an Al y Ga 1-y N / Al x Ga 1-x N multiquantum well active layer, which faces away from the substrate, forms an Al z Ga1-z N second quantum barrier layer;

[0037] The temperature in the reaction cavity is reduced to 990 DEG C, TMAl, TMGa, Cp2Mg, NH3 and H2 are introduced into the reaction cavity under the reaction cavity pressure of 50 Torr, and the Al z Ga 1-z N second quantum barrier layer is formed on the surface of the substrate away from the substrate, and a multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer;

[0038] The temperature in the reaction cavity is reduced to 930 DEG C, TMAl, TMGa, Cp2Mg, NH3 and H2 are introduced into the reaction cavity under the reaction cavity pressure of 100 Torr, and the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer is formed on the surface of the substrate away from the substrate, and a P-type Al f Ga 1-f N ohmic contact layer.

[0039] In a third aspect, the application further provides a light emitting device, which comprises the deep ultraviolet light emitting diode epitaxial structure provided in the first aspect of the application.

[0040] The application provides a deep ultraviolet light emitting diode epitaxial structure, a preparation method and a light emitting device, and the semiconductor light emitting diode comprises a substrate, a first AlN layer located on one side surface of the substrate, a second AlN layer located on the side of the first AlN layer away from the substrate, an Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer; an N-type Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer is formed on the side of the substrate away from the substrate, and an N-type Al c Ga 1-c N ohmic contact layer; an N-type Al c Ga 1-c N ohmic contact layer is formed on the side of the substrate away from the substrate, and an Al x Ga 1-x N first quantum barrier layer; an Al x Ga 1-x N first quantum barrier layer is formed on the side of the substrate away from the substrate, and an Al y Ga 1-y N / Alx Ga 1-x N multi-quantum well active layer; located on Al y Ga 1-y N / Al x Ga 1-x N multi-quantum well active layer away from the substrate side of Al z Ga 1-z N second quantum barrier layer; located on Al z Ga 1-z N second quantum barrier layer away from the substrate side of multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer; located on multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer away from the substrate side of P-type Al f Ga 1-f N ohmic contact layer. Wherein, multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer can evenly distribute the electron and hole concentration injected in the active area, effectively increase the effective radiation recombination probability of electrons and holes in the multi-quantum well, reduce the excess electron overflow to the p- region epitaxial layer to produce additional radiation recombination, thereby improving the half width of the light spectrum, and more carriers can be effectively radiated in the multi-quantum well light emitting area, effectively improving the light emitting efficiency and purity of the LED. BRIEF DESCRIPTION OF DRAWINGS

[0041] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and serve to explain the principles of the application, and do not limit the application. In the drawings:

[0042] Figure 1 is a structure schematic diagram of a deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the application;

[0043] Figure 2 is another structure schematic diagram of a deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the application;

[0044] Figure 3 is another structure schematic diagram of another deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the application;

[0045] Figure 4is a flowchart of a method for preparing a deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the present application;

[0046] Figure 5 is a flowchart of another method for preparing a deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the present application;

[0047] Figure 6 is a flowchart of yet another method for preparing a deep ultraviolet light emitting diode epitaxial structure provided by an embodiment of the present application;

[0048] Figure 7 is a flowchart of a method for preparing a deep ultraviolet light emitting diode epitaxial structure provided by related art;

[0049] Figure 8 is a schematic diagram of a deep ultraviolet light emitting diode epitaxial structure in related art;

[0050] Figure 9 is a comparison diagram of EL spectra of different deep ultraviolet light emitting diode epitaxial structures provided by an embodiment of the present application. DETAILED DESCRIPTION

[0051] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions, and numerical values set forth in these embodiments are not limiting to the scope of the present application unless otherwise specifically stated.

[0052] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way limiting to the scope of the application and its applications or uses.

[0053] Techniques, methods, and apparatus known to those of ordinary skill in the relevant art can not be discussed in detail herein, but should be considered as if the discussion were set forth in detail herein.

[0054] In all of the compositions and methods described herein, any of the specific values stated can be replaced by alternative values of the same dimension which perform the same function in one or more of the same ways. Thus, for example, the other examples of the exemplary embodiments can have different values.

[0055] Various modifications and changes can be made as would be obvious to a person of ordinary skill in the art having the benefit of this disclosure, without departing from the spirit and scope of the application. Thus, the scope of the application should be limited only by the appended claims, and equivalents thereof.

[0056] It should be noted that like reference numerals and characters refer to like elements throughout the following figures and the detailed description, and thus, once defined no further discussion of a certain item is provided in subsequent figures.

[0057] The application will be understood more clearly with reference to the following drawings and specific embodiments.

[0058] In one of the optional embodiments, as shown in Figure 1 Figure 1 is a schematic diagram of an epitaxial structure of a deep ultraviolet light emitting diode provided by an embodiment of the application. The epitaxial structure of the deep ultraviolet light emitting diode provided by the embodiment includes:

[0059] a substrate 100; optionally, the material of the substrate 100 in the embodiment is sapphire.

[0060] a first AlN layer 110 located on one side surface of the substrate 100;

[0061] a second AlN layer 120 located on the side of the first AlN layer 110 away from the substrate 100; optionally, the first AlN layer 110 is a low-temperature AlN layer, and the second AlN layer 120 is a high-temperature AlN layer. The thickness of the low-temperature AlN layer is 20 nm to 30 nm, and the thickness of the high-temperature AlN layer is 2 μm to 4 μm.

[0062] an Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer 130 located on the side of the second AlN layer 120 away from the substrate 100; optionally, the Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer 130 includes an Al a Ga 1-a N layer, an AlN layer and an Al b Ga 1-b N layer, wherein optionally, the thicknesses of the Al a Ga 1-a N layer, the AlN layer and the Al b Ga 1-b N layer are respectively 0.1 μm to 0.3 μm, 0.03 μm to 0.07 μm and 0.1 μm to 0.3 μm, and 0.5<b<=a<1.

[0063] an N-type Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer 130 located on the side of the second AlN layer 120 away from the substrate 100; optionally, the Al c ​Ga 1-c N ohmic contact layer 140; optionally, Al c Ga 1-c The thickness of the N ohmic contact layer 140 is 1 μm to 3 μm, and 0.3 < c < 1.

[0064] The N type Al c Ga 1-c The Al on the side of the N ohmic contact layer 140 facing away from the substrate 100 x Ga 1-x N first quantum barrier layer 150; optionally, Al x Ga 1-x The thickness of the N first quantum barrier layer 150 is 3 nm to 7 nm.

[0065] The Al x Ga 1-x The Al on the side of the N first quantum barrier layer 150 facing away from the substrate 100 y Ga 1-y N / Al x Ga 1-x N multiple quantum well active layer 160; optionally, 0.4 < y < x < 0.8, and x < c. Al y Ga 1-y N / Al x Ga 1-x The N multiple quantum well active layer 160 is made of Al y Ga 1- y N layer and Al x Ga 1-x Layers are prepared periodically. In this embodiment, optionally, Al y Ga 1-y N / Al x Ga 1-x The preparation period of the N multiple quantum well active layer 160 is 4, i.e. Al y Ga 1-y N / Al x Ga 1-x The N multiple quantum well active layer 160 is made of Al y Ga 1-y N quantum barrier layer and Al x Ga 1-x N quantum well layer are alternately arranged four times, Al y Ga 1-y N / Al x Ga 1-x The N multiple quantum well active layer 160 contains multiple quantum well layers and quantum barrier layers. It should be noted that Al y Ga 1-y N / Al x Ga1-x The first quantum barrier layer of the N multiple quantum well active layer 160 is Al x Ga 1-x N The first quantum barrier layer 150.

[0066] The Al y Ga 1-y N / Al x Ga 1-x N The Al z Ga 1-z N The second quantum barrier layer 170; optionally, the thickness of the second quantum barrier layer is 3nm-7nm, 0.5<z<=1.

[0067] The Al z Ga 1-z N The P-type Al d Ga 1-d N / Al e Ga 1-e N The electron blocking layer 180, wherein the P-type Al d Ga 1-d N / Al e Ga 1-e N The electron blocking layer 180 includes T layer groups; optionally, 0.6≤d≤0.7, 0.3≤e≤0.5.

[0068] The P-type Al d Ga 1-d N / Al e Ga 1-e N The P-type Al f Ga 1- f N The ohmic contact layer 190.

[0069] It should be noted that, in the present embodiment, except for the P-type Al d Ga 1-d N / Al e Ga 1-e N The electron blocking layer 180, the thickness of each layer and the parameter range are not limited to the example data shown in the present embodiment, and the person skilled in the art can make adaptive adjustment according to the actual situation.

[0070] The above-described deep ultraviolet light emitting diode epitaxial structure, the P-type Al d Ga 1-d N / Al e Ga 1-eThe N electron blocking layer 180 can uniformly distribute the electron and hole concentration injected into the active region, effectively increase the effective radiation recombination probability of the electron and hole in the multi-quantum well, reduce the overflow of the excess electron to the p-type epitaxial layer to generate additional radiation recombination, and thus improve the half-width of the light emission spectrum. In addition, more carriers can be effectively radiation recombined in the multi-quantum well light emission region, so that the entire deep ultraviolet light emitting diode epitaxial structure has high light emission efficiency and purity.

[0071] In an optional embodiment of the present application, based on the embodiment shown in Figure 1 , reference is made to Figure 2 , Figure 2 is another structural schematic diagram of the deep ultraviolet light emitting diode epitaxial structure of the embodiment. In the embodiment, the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer 180 of the deep ultraviolet light emitting diode epitaxial structure includes one Al d Ga 1-d N layer 181 and one Al e Ga 1-e N layer 182 in each layer group of T layer groups, 3≤T≤10, T is a positive integer, the Al d Ga 1-d N layer 181 and the Al e Ga 1-e N layer 182 are arranged alternately. In the embodiment, T is specifically 6.

[0072] In an optional embodiment of the present application, in order to form a superlattice structure, the thickness of the Al d Ga 1-d N layer 181, the thickness of the Al e Ga 1-e N layer 182, and the thickness of the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer 180 are all less than 100 nm.

[0073] Optionally, in the embodiment, the thickness of the Al d Ga 1-d N layer 181 in each layer group is 2 nm to 6 nm, and the thickness of the Al e Ga 1-e N layer 182 in each layer group is 4 nm to 12 nm. This thickness design can take into account the optical and electrical properties, and ensure that the layer group thickness and hole concentration adjustment of the entire deep ultraviolet light emitting diode epitaxial structure make the start voltage of the deep ultraviolet light emitting diode epitaxial structure less than 5 volts.

[0074] The deep ultraviolet light emitting diode epitaxial structure of the embodiment is composed of one Al d Ga 1-d N layer 181 and one Al e Ga 1-e N layer 182, and then T layer groups are composed of multiple periods of P-type Al d Ga 1-d N / Al e Ga 1-e The electron blocking layer 180 can uniformly distribute the electron and hole concentrations injected into the active region, effectively increase the effective radiation recombination probability of the electrons and holes in the multiple quantum wells, reduce the overflow of the excess electrons to the p-type region epitaxial layer to generate additional radiation recombination, and further improve the half-width of the light spectrum. More carriers can be effectively radiation recombined in the multiple quantum well light emitting region, so that the entire deep ultraviolet light emitting diode epitaxial structure has high light emitting efficiency and purity.

[0075] In an optional embodiment of the present application, in Figure 1 the embodiment, reference is made to Figure 3 , Figure 3 is another structure diagram of the deep ultraviolet light emitting diode epitaxial structure of the embodiment. The T layer groups include T1 first layer groups 200 and T2 second layer groups 300, T1+T2=T, T1

[0076] The thickness of the Al d Ga 1-d N layer 181 of the first layer group 200 is greater than the thickness of the Al d Ga 1-d N layer 181 of the second layer group 300, and / or the thickness of the Al e Ga 1-e N layer 182 of the first layer group 200 is greater than the thickness of the Al e Ga 1-e N layer 182 of the second layer group 300. In the embodiment, the thickness of the Al d Ga 1-d N layer 181 of the first layer group 200 is greater than the thickness of the Al d Ga 1-d N layer 181 of the second layer group 300, and the thickness of the Al e Ga 1-e N layer 182 of the first layer group 200 is greater than the thickness of the Al e Ga 1-eThe thickness of the N layer 182 is described.

[0077] In an alternative embodiment of the present application, the Al d Ga 1-d The thickness of the N layer 181 is 4 nm, the Al e Ga 1-e The thickness of the N layer 182 is 8 nm, the Al d Ga 1-d The thickness of the N layer 181 is 2 nm, the Al e Ga 1-e The thickness of the N layer 182 is 4 nm.

[0078] Based on the same inventive concept, the present embodiment further provides a method for preparing the DUV LED epitaxial structure as described above. Please refer to Figure 4 , Figure 4 is one of the flowcharts of the method for preparing the DUV LED epitaxial structure provided by the present application. The method for preparing the DUV LED epitaxial structure of the present embodiment is specifically used for preparing the DUV LED epitaxial structure as shown in Figure 1 , and the method comprises the following steps:

[0079] S401, providing a sapphire substrate.

[0080] S402, placing the sapphire substrate into a reaction cavity of a MOCVD machine, increasing the temperature in the reaction cavity to 800℃, and introducing TMAl, NH3 and H2 into the reaction cavity under a reaction cavity pressure of 50 Torr to form a first AlN layer on the surface of the substrate.

[0081] S403, increasing the temperature in the reaction cavity to 1270℃, and introducing TMAl, NH3 and H2 into the reaction cavity under a reaction cavity pressure of 50 Torr to form a second AlN layer on the surface of the first AlN layer.

[0082] S404, decreasing the temperature in the reaction cavity to 1170℃, and introducing TMAl, TMGa, NH3 and H2 into the reaction cavity under a reaction cavity pressure of 50 Torr to form an Al a Ga 1-a N / AlN / Al b Ga 1-b N multilayer structure transition layer on the surface of the second AlN layer away from the substrate. Wherein, SiH4 can be introduced as the N-type dopant.

[0083] S405, the temperature in the reaction cavity is reduced to 1070℃, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction cavity under the pressure of 50Torr, and Al a Ga 1-a N / AlN / Al b Ga 1-b N multi-layer structure transition layer forms N-type Al c Ga 1-c N ohmic contact layer away from the surface of the substrate. Wherein, SiH4 is an N-type dopant.

[0084] S406, the temperature in the reaction cavity is reduced to 1000℃, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction cavity under the pressure of 50Torr, and then TMAl, TMGa, NH3 and H2 are introduced into the reaction cavity, and the surface of the N-type Al c Ga 1- c N ohmic contact layer away from the surface of the substrate forms Al y Ga 1-y N / Al x Ga 1-x N multi-quantum well active layer, wherein TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction cavity for the first time, and the N-type Al c Ga 1-c N ohmic contact layer away from the surface of the substrate is Al x Ga 1-x N first quantum barrier layer.

[0085] Optionally, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction cavity to generate quantum barriers, and TMAl, TMGa, NH3 and H2 are introduced into the reaction cavity to generate quantum wells. In this embodiment, the number of times of repeating the process of first introducing TMAl, TMGa, SiH4, NH3 and H2 into the reaction cavity and then introducing TMAl, TMGa, NH3 and H2 into the reaction cavity under the pressure of 50Torr in the reaction cavity can be 2-6.

[0086] S407, the temperature in the reaction cavity is kept at 1000℃, TMAl, TMGa, NH3 and H2 are introduced into the reaction cavity under the pressure of 50Torr, and Al y Ga 1-y N / Al x Ga 1-x N multi-quantum well active layer surface forms Al z Ga 1-z N second quantum barrier layer. Wherein, the second quantum barrier layer is not doped with Si.

[0087] S408, the temperature in the reaction cavity is reduced to 990 DEG C, TMAl, TMGa, Cp2Mg, NH3 and H2 are introduced into the reaction cavity under the pressure of 50 Torr in the reaction cavity, and the Al z Ga 1-z N second quantum barrier layer is formed on the surface away from the substrate d Ga 1-d N / Al e Ga 1-e N electron blocking layer.

[0088] S409, the temperature in the reaction cavity is reduced to 930 DEG C, TMAl, TMGa, Cp2Mg, NH3 and H2 are introduced into the reaction cavity under the pressure of 100 Torr in the reaction cavity, and the P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer is formed on the surface away from the substrate f Ga 1-f N ohmic contact layer.

[0089] The preparation method of the deep ultraviolet light emitting diode epitaxial structure of the embodiment, the prepared deep ultraviolet light emitting diode epitaxial structure, has a multi-period P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer, which can uniformly distribute the electron and hole concentrations injected into the active region, effectively increase the effective radiation recombination probability of the electrons and holes in the multi-quantum well, reduce the overflow of the excess electrons to the p-region epitaxial layer to generate additional radiation recombination, and thus improve the half-width of the light emission spectrum. More carriers can be effectively radiation recombined in the multi-quantum well light emitting region, so that the preparation method of the deep ultraviolet light emitting diode epitaxial structure of the embodiment can prepare a deep ultraviolet light emitting diode epitaxial structure with higher light emission efficiency and purity.

[0090] The performance of the deep ultraviolet light emitting diode epitaxial structure of the present application and related technologies will be compared below in combination with the specific preparation embodiment one, the specific preparation embodiment two of the present application and the specific preparation embodiment three in related technologies.

[0091] The specific preparation embodiment one of the present application is described below. Figure 5 , Figure 5 is one of the flowcharts of a specific preparation method of a deep ultraviolet light emitting diode epitaxial structure provided by the present application, and the preparation method of the deep ultraviolet light emitting diode epitaxial structure of the embodiment is specifically used to prepare a deep ultraviolet light emitting diode epitaxial structure as shown in Figure 2 , which comprises:

[0092] S500, using MOCVD machine, temperature is raised to 800℃, TMAl, NH3 and H2 are introduced under 50Torr to form 25nm low temperature AlN on sapphire substrate;

[0093] S501, temperature is raised to 1270℃, TMAl, NH3 and H2 are introduced under 50Torr to form 3μm high temperature AlN;

[0094] S502, temperature is lowered to 1170℃, TMAl, TMGa, NH3 and H2 are introduced under 50Torr to form 0.2μm / 0.05μm / 0.2μm Al a Ga 1-a N / AlN / Al b Ga 1-b N multi-layer structure transition layer, where 0.5<b<=a<1, SiH4 can be introduced as N-type dopant, Si doping concentration can be between 1E+17 to 4E+19cm -3 ;

[0095] S503, temperature is lowered to 1070℃, TMAl, TMGa, SiH4, NH3 and H2 are introduced under 50Torr to form 2μm N-type Al 0.6 Ga 0.4 N ohmic contact layer, where SiH4 is N-type dopant, Si doping concentration is 8E+19cm -3 ;

[0096] S504, temperature is lowered to 1000℃, TMAl, TMGa, SiH4, NH3 and H2 are introduced under 50Torr to form Si-doped AlGaN quantum barrier, thickness is about 5nm, Al component is about 55%, Si doping concentration is 4E+18cm -3 ;

[0097] S505, TMAl, TMGa, NH3 and H2 are introduced under 1000℃, 50Torr to form AlGaN quantum well, thickness is about 2nm, Al component is about 45%, Si doping concentration is 4E+18cm -3 ;

[0098] S506, S504 and S505 are repeated for 4 cycles to form 4-period Al 0.55 Ga 0.45 N / Al 0.45 Ga 0.55 N multi-quantum well active layer;

[0099] S507, under conditions of 1000℃ and 50 Torr, introduces TMAl, TMGa, NH3 and H2 to form the final AlGaN quantum barrier with a thickness of about 5nm, an Al composition of about 55%, and no Si doping;

[0100] S508, cooled to 990℃, and TMAl, TMGa, Cp2Mg, NH3 and H2 were introduced at 50 Torr to form Al with a repeating period of 6, i.e., 6 layers. d Ga 1-d N and Al e Ga 1-e N layer, Al d Ga 1-d The thickness of N is 4 nm and Al e Ga 1-e The N thickness is 8 nm, the Al component d is between 0.6-0.7 (60-70%), the Al component e is between 0.3-0.5 (30-50%), and the Mg doping concentration is approximately 3E+18 cm⁻¹. -3 ;

[0101] S509, under conditions of cooling to 930℃ and 100 Torr, introduces Cp2Mg, TMAl, TMGa, NH3, and H2 to form p-type Al. f Ga 1-f The N-component modulated ohmic contact layer is approximately 40 nm thick, with the Al component gradually decreasing from 50% to 10%, and the Mg doping concentration ranging from approximately 5E+18 to 3E+19 cm⁻¹. -3 .

[0102] Specific preparation example 2 of the present invention: Please refer to Figure 6 , Figure 6 This is one of the flowcharts illustrating a specific method for preparing another deep ultraviolet (UV) light-emitting diode (DED) epitaxial structure provided in this application. Based on the above embodiments, the method for preparing the UV light-emitting diode (DED) epitaxial structure in this embodiment is specifically used to prepare, for example... Figure 3 The deep ultraviolet light-emitting diode epitaxial structure shown in the method includes:

[0103] Using an S600 MOCVD machine, the temperature was raised to 800℃, and TMAl, NH3 and H2 were introduced at 50 Torr to form a 25nm thick low-temperature AlN on a sapphire substrate.

[0104] S601, heat to 1270℃, and introduce TMAl, NH3 and H2 at 50 Torr to form a high-temperature AlN with a thickness of 3μm;

[0105] S602, cooled to 1170℃, and TMAl, TMGa, NH3 and H2 were introduced at 50 Torr to form an Al layer with thicknesses of 0.2μm / 0.05μm / 0.2μm.a Ga 1-a N / AlN / Al b Ga 1-b N multi-layer structure transition layer, where 0.5<b<=a<1, SiH4 can be introduced as N-type dopant, Si doping concentration can be between 1E+17 to 4E+19 cm -3 ;

[0106] S603, cool down to 1070°C, introduce TMAl, TMGa, SiH4, NH3 and H2 at 50 Torr, form 2 μm N-type Al 0.6 Ga 0.4 N ohmic contact layer, where SiH4 is N-type dopant, Si doping concentration is 8E+19 cm -3 ;

[0107] S604, cool down to 1000°C, introduce TMAl, TMGa, SiH4, NH3 and H2 at 50 Torr, form Si-doped AlGaN quantum barrier, thickness is about 5 nm, Al composition is about 55%, Si doping concentration is 4E+18 cm -3 ;

[0108] S605, introduce TMAl, TMGa, NH3 and H2 at 1000°C, 50 Torr, form AlGaN quantum well, thickness is about 2 nm, Al composition is about 45%, Si doping concentration is 4E+18 cm -3 ;

[0109] S606, repeat growth of S604 and S605 for 4 cycles, form 4 periods of Al 0.55 Ga 0.45 N / Al 0.45 Ga 0.55 N multi-quantum well active layer;

[0110] S607, introduce TMAl, TMGa, NH3 and H2 at 1000°C, 50 Torr, form last AlGaN quantum barrier, thickness is about 5 nm, Al composition is about 55%, no Si doping;

[0111] S608, cool down to 990°C, introduce TMAl, TMGa, Cp2Mg, NH3 and H2 at 50 Torr, form Al d Ga 1-d N and Al e Ga 1-e N layers, Al d Ga 1-dN is 4 nm and Al e Ga 1-e N is 8 nm, Al component d is between 0.6-0.7 (60-70%), Al component e is between 0.3-0.5 (30-50%), Mg doping concentration is about 3E+18 cm -3 ;

[0112] S609, cooling to 930°C and 100Torr, introducing Cp2Mg, TMAl, TMGa, NH3 and H2, forming P-type Al f Ga 1-f N component modulation ohmic contact layer, thickness is about 40 nm, Al component gradually changes from 50% to 10%, Mg doping concentration is about 5E+18 to 3E+19 cm -3 .

[0113] Specific preparation example three in the related art: please refer to Figure 7 , Figure 7 is one of the flowcharts of a specific preparation method of a deep ultraviolet light emitting diode epitaxial structure in the related art, the preparation method of the deep ultraviolet light emitting diode epitaxial structure in the embodiment is specifically used for preparing the deep ultraviolet light emitting diode epitaxial structure in the related art, and the method comprises:

[0114] S700, using an MOCVD machine, heating to 800°C, introducing TMAl, NH3 and H2 under 50Torr to form a low-temperature AlN with a thickness of 25 nm on a sapphire substrate;

[0115] S701, heating to 1270°C, introducing TMAl, NH3 and H2 under 50Torr to form a high-temperature AlN with a thickness of 3μm;

[0116] S702, cooling to 1170°C, introducing TMAl, TMGa, NH3 and H2 under 50Torr to form an Al a Ga 1-a N / AlN / Al b Ga 1-b N multilayer structure transition layer, wherein 0.5<b<=a<1, SiH4 can be introduced as an N-type dopant, and the Si doping concentration can be between 1E+17 and 4E+19 cm -3 ;

[0117] S703, cooling to 1070°C, introducing TMAl, TMGa, SiH4, NH3 and H2 under 50Torr to form a 2μm N-type Al 0.6 Ga 0.4N ohmic contact layer, where SiH4 is N-type dopant, Si doping concentration is 8E+19 cm -3 ;

[0118] S704, cool down to 1000 °C, introduce TMAl, TMGa, SiH4, NH3 and H2 at 50 Torr, form Si-doped AlGaN quantum barrier, thickness is about 5 nm, Al composition is about 55%, Si doping concentration is 4E+18 cm -3 ;

[0119] S705, introduce TMAl, TMGa, NH3 and H2 at 1000 °C, 50 Torr, form AlGaN quantum well, thickness is about 2 nm, Al composition is about 45%, Si doping concentration is 4E+18 cm -3 ;

[0120] S706, repeat growth of S704 and S705 for 4 cycles, form 4-period Al 0.55 Ga 0.45 N / Al 0.45 Ga 0.55 N multiple quantum well active layer;

[0121] S707, introduce TMAl, TMGa, NH3 and H2 at 1000 °C, 50 Torr, form last AlGaN quantum barrier, thickness is about 5 nm, Al composition is about 55%, no Si doping;

[0122] S708, cool down to 990 °C, introduce TMAl, TMGa, Cp2Mg, NH3 and H2 at 50 Torr, form P-type Al d Ga 1-d N electron blocking layer, Al d Ga 1-d N thickness is 72 nm, Al composition d is 60-70%, Mg doping concentration is about 3E+18 cm -3 ;

[0123] S709, cool down to 930 °C and 100 Torr, introduce Cp2Mg, TMAl, TMGa, NH3 and H2, form P-type Al f Ga 1-f N composition modulation ohmic contact layer, thickness is about 40 nm, Al composition gradually changes from 50% to 10%, Mg doping concentration is about 5E+18 to 3E+19 cm -3 .

[0124] See Figure 8 , Figure 8 is as Figure 7The diagram shows a schematic of a deep ultraviolet (UV) light-emitting diode (DED) epitaxial structure prepared using a specific method in the related technology. (See attached diagram.) Figure 8 The deep ultraviolet light-emitting diode epitaxial structure shown includes, from bottom to top, a sapphire substrate 10, a low-temperature AlN layer 11, a high-temperature AlN layer 12, an AlGaN / AlN / AlGaN transition layer 13, an N-AlGaN ohmic contact layer 14, an AlGaN first quantum barrier layer 15, an AlGaN / AlGaN quantum well active layer 16, a second quantum barrier layer 17, a P-type AlGaN electron blocking layer 18, and a P-type AlGaN electron blocking layer 19.

[0125] Please refer to Figure 9 , Figure 9 Is it like this? Figure 8 As shown and as Figure 2 As shown and as Figure 3 The image shows a comparison of the EL spectra of deep ultraviolet light-emitting diode epitaxial structures. Definitions are as follows: Figure 8 The deep ultraviolet light-emitting diode epitaxial structure shown is the first structure, such as... Figure 2 The deep ultraviolet light-emitting diode epitaxial structure shown is the second structure, such as... Figure 3 The deep ultraviolet light-emitting diode epitaxial structure shown is the third structure. From Figure 9 As can be seen, the luminescence intensity of the deep ultraviolet light-emitting diode epitaxial structure corresponding to the second and third structures is greater than that of the first structure, while the luminescence intensity of the deep ultraviolet light-emitting diode epitaxial structure corresponding to the third structure is greater than that of the light-emitting diode epitaxial structure corresponding to the second structure, and both have a half-width at half-maximum (FWHM) smaller than those of the first and second structures. Specifically, the structure prepared using Example 2 of this application comprises six layer groups, including two first layer groups and four second layer groups. The first layer group contains Al... d Ga 1-d The thickness of layer N is greater than that of layer Al in the second group. d Ga 1-d The thickness of layer N, and the Al of the first layer group e Ga 1-e The thickness of layer N is greater than that of layer Al in the second group. e Ga 1-e Multi-period P-type Al with N-layer thickness d Ga 1-d N / Al e Ga 1-e The deep ultraviolet light-emitting diode epitaxial structure with an N electron blocking layer and the structure prepared according to the specific preparation example 1 of this application, which includes 6 layers, each layer Al d Ga 1-d N layer 181 and Al e Ga 1-eN layers 182 are arranged alternately and have the same thickness, and the deep ultraviolet light emitting diode epitaxial structure has a plurality of periods of P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer has a good light emitting intensity. As shown in the deep ultraviolet light emitting diode epitaxial structure Figure 3 has six layer groups, the six layer groups include two first layer groups and four second layer groups, the Al d Ga 1-d N layers of the first layer group have a thickness greater than that of the Al d Ga 1-d N layers of the second layer group, and the Al e Ga 1-e N layers of the first layer group have a thickness greater than that of the Al e Ga 1-e N layers of the second layer group, and the deep ultraviolet light emitting diode epitaxial structure has a plurality of periods of P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer has a higher light emitting intensity.

[0126] Based on the above analysis, the preparation method of the deep ultraviolet light emitting diode epitaxial structure can prepare a deep ultraviolet light emitting diode epitaxial structure with a higher light emitting intensity.

[0127] Based on the same inventive concept, the application also provides a light emitting device, which has the deep ultraviolet light emitting diode epitaxial structure described above in an optional embodiment.

[0128] It should be noted that the light emitting device of the present embodiment can be, but is not limited to, a signal lamp, a keyboard lamp or an illuminating lamp.

[0129] The light emitting device of the present embodiment has a deep ultraviolet light emitting diode epitaxial structure comprising:

[0130] a substrate;

[0131] a first AlN layer located on one side surface of the substrate;

[0132] a second AlN layer located on the side away from the substrate of the first AlN layer;

[0133] an Al a Ga 1-a N / AlN / Al b Ga 1-b N transition layer;

[0134] an Al a Ga 1-aN / AlN / Al b Ga 1-b N transition layer Al on the side facing away from the substrate c Ga 1-c N ohmic contact layer

[0135] N on the side facing away from the substrate c Ga 1-c Al on the side facing away from the substrate x Ga 1-x N first quantum barrier layer

[0136] Al on the side facing away from the substrate x Ga 1-x Al on the side facing away from the substrate y Ga 1-y N / Al x Ga 1-x N multi-quantum well active layer

[0137] Al on the side facing away from the substrate y Ga 1-y N / Al x Ga 1-x Al on the side facing away from the substrate z Ga 1-z N second quantum barrier layer

[0138] Al on the side facing away from the substrate z Ga 1-z N second quantum barrier layer d Ga 1-d N / Al e Ga 1-e N electron blocking layer d Ga 1-d N / Al e Ga 1-e N electron blocking layer comprises T layer groups; optionally, Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer on the side facing away from the substrate z Ga 1-z N second quantum barrier layer and P-type Al f Ga 1-f N ohmic contact layer, which can uniformly distribute the electron and hole concentrations injected in the active region, thereby increasing the electron and hole in the Al y Ga 1- y N / Al x Ga 1-xThe effective radiation recombination probability in the N multiple quantum well active layer is reduced, the extra electron overflow to the p-type epitaxial layer to generate additional radiation recombination is avoided, the occurrence of parasitic long wavelength light spectrum is avoided, the half width of the light spectrum is improved, more carriers can be effectively radiation recombined in the multiple quantum well light emitting area, and the light emitting efficiency of the light emitting diode structure is improved.

[0139] P-type Al d Ga 1-d N / Al e Ga 1-e N electron blocking layer f Ga 1-f N ohmic contact layer.

[0140] The light emitting device has a deep ultraviolet light emitting diode epitaxial structure, the deep ultraviolet light emitting diode epitaxial structure has good light emitting efficiency and high intensity, so that the light emitting device also has the characteristics of good light emitting efficiency and high intensity.

[0141] Although some specific embodiments of the present application have been described in detail by examples, those skilled in the art should understand that the above examples are only for illustration, not for limiting the scope of the present application. Those skilled in the art should understand that the above embodiments can be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A deep ultraviolet light-emitting diode epitaxial structure, characterized in that, include: Substrate; The first AlN layer is located on one side surface of the substrate; A second AlN layer located on the side of the first AlN layer facing away from the substrate; Al located on the side of the second AlN layer away from the substrate a Ga 1-a N / AlN / Al b Ga 1-b N transition layer; Located in Al a Ga 1-a N / AlN / Al b Ga 1-b The N-type Al transition layer on the side facing away from the substrate c Ga 1-c N-ohm contact layer; Located in the N-type Al c Ga 1-c The Al layer on the side of the N-ohm contact layer facing away from the substrate x Ga 1-x N is the first quantum barrier layer; Located in Al x Ga 1-x The Al layer on the side of the first quantum barrier layer away from the substrate y Ga 1-y N / Al x Ga 1-x Multiple quantum well active layers; Located in Al y Ga 1-y N / Al x Ga 1-x Al on the side of the N quantum well active layer facing away from the substrate z Ga 1-z N is the second quantum barrier layer; Located in Al z Ga 1-z The second quantum barrier layer N is a multi-periodic P-type Al layer on the side opposite to the substrate. d Ga 1-d N / Al e Ga 1-e N-electron blocking layer, wherein the multi-period P-type Al d Ga 1-d N / Al e G a 1-e The N-electron blocking layer consists of T layers; The T layers of the multi-period P-type AldGa1-dN / AleGa1-eN electron blocking layer each include one AldGa1-dN layer and one AleGa1-eN layer, where 3≤T≤6 and T is a positive integer; The AldGa1-dN layer and the AleGa1-eN layer are arranged alternately; The T layers include T1 first layers and T2 second layers, T1 + T2 = T, and T1 < T2, T1 ≥ 1, T2 ≥ 2; The thickness of the AldGa1-dN layer in the first layer group is greater than the thickness of the AldGa1-dN layer in the second layer group, and / or the thickness of the AleGa1-eN layer in the first layer group is greater than the thickness of the AleGa1-eN layer in the second layer group; The second layer group is located on the side of the first layer group that is away from the second quantum barrier layer; Located in the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e The N-electron blocking layer is located on the side of the substrate opposite to the P-type Al. f Ga 1-f N-ohm contact layer.

2. The deep ultraviolet light-emitting diode epitaxial structure according to claim 1, characterized in that, The multi-period P-type Al d Ga 1-d N / Al e Ga 1-e In the N electron blocking layer, 0.6≤d≤0.7, 0.3≤e≤0.

5.

3. The deep ultraviolet light-emitting diode epitaxial structure according to claim 2, characterized in that, The Al d Ga 1-d The thickness of layer N, the Al e Ga 1-e The thickness of the N layer and the multi-period P-type Al d Ga 1-d N / Al e Ga 1-e The thickness of the N electron blocking layer is less than 100 nm.

4. The deep ultraviolet light-emitting diode epitaxial structure according to claim 1, characterized in that, The Al in each layer group d Ga 1-d The thickness of the N layer is 2nm to 6nm, and the Al in each layer group e Ga 1-e The thickness of the N layer is 4nm to 12nm.

5. The deep ultraviolet light-emitting diode epitaxial structure according to claim 1, characterized in that, The Al of the first layer group d Ga 1-d The thickness of the N layer is 4 nm, and the Al in the first layer group e Ga 1-e The thickness of the N layer is 8 nm; The Al of the second layer group d Ga 1-d The thickness of the N layer is 2nm, and the Al in the first layer group e Ga 1-e The thickness of the N layer is 4 nm.

6. The deep ultraviolet light-emitting diode epitaxial structure according to claim 4, characterized in that, The first AlN layer is a low-temperature AlN layer, and the second AlN layer is a high-temperature AlN layer.

7. A method for preparing a deep ultraviolet light-emitting diode epitaxial structure, used to prepare the deep ultraviolet light-emitting diode epitaxial structure as described in any one of claims 1 to 6, characterized in that, include: Provide sapphire substrates; The sapphire substrate is placed in the reaction chamber of the MOCVD machine, the temperature inside the reaction chamber is raised to 800°C, and TMAl, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr to form a first AlN layer on the substrate surface. The temperature inside the reaction chamber is raised to 1270°C, and TMAl, NH3 and H2 are introduced into the reaction chamber at a pressure of 50 Torr to form a second AlN layer on the surface of the first AlN layer. The temperature inside the reaction chamber was lowered to 1170°C, and TMAl, TMGa, NH3, and H2 were introduced into the reaction chamber at a pressure of 50 Torr. The second AlN layer formed on the surface away from the substrate. a Ga 1-a N / AlN / Al b Ga 1-b Multiple multi-layer structure transition layers; The temperature inside the reaction chamber was lowered to 1070°C, and TMAl, TMGa, SiH4, NH3, and H2 were introduced into the reaction chamber at a pressure of 50 Torr. In the Al... a Ga 1-a N / AlN / Al b Ga 1-b The N-layer multilayer transition layer forms an N-type Al layer away from the surface of the substrate. c Ga 1-c N-ohm contact layer; The temperature inside the reaction chamber was lowered to 1000°C, and the reaction chamber pressure was repeatedly increased by first introducing TMAl, TMGa, SiH4, NH3, and H2 into the reaction chamber, and then introducing TMAl, TMGa, NH3, and H2 into the reaction chamber again, at a time when the N-type Al... c Ga 1-c The N-ohm contact layer forms an Al layer on the surface away from the substrate. y Ga 1-y N / Al x Ga 1-x N multiple quantum well active layers, wherein, for the first time, TMAl, TMGa, SiH4, NH3 and H2 are introduced into the reaction cavity, in the N-type Al c Ga 1-c The N-ohm contact layer is an Al film layer on the surface facing away from the substrate. x Ga 1-x N is the first quantum barrier layer; Maintaining the temperature inside the reaction chamber at 1000°C, and introducing TMAl, TMGa, NH3, and H2 into the reaction chamber at a pressure of 50 Torr, Al... y Ga 1-y N / Al x Ga 1-x Al is formed on the surface of the active layer of N quantum wells. z Ga 1-z N is the second quantum barrier layer; The temperature inside the reaction chamber was lowered to 990°C, and TMAl, TMGa, Cp2Mg, NH3, and H2 were introduced into the reaction chamber at a pressure of 50 Torr. The Al... z Ga 1-z The second quantum barrier layer (N) forms a multi-period P-type Al layer away from the surface of the substrate. d Ga 1-d N / Al e Ga 1-e N electron blocking layer; The temperature inside the reaction chamber was lowered to 930°C, and TMAl, TMGa, Cp2Mg, NH3, and H2 were introduced into the reaction chamber at a pressure of 100 Torr. This was done in the multi-period P-type Al... d Ga 1-d N / Al e Ga 1-e The N-electron blocking layer forms a P-type Al layer away from the surface of the substrate. f Ga 1-f N-ohm contact layer.

8. A light-emitting device, characterized in that, Including the deep ultraviolet light-emitting diode epitaxial structure as described in any one of claims 1-7.

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