Method for reducing laser annealing carbon precipitation amount of SiC material and SiC material

By forming a silicon-nickel alloy layer on the back side of a SiC substrate and performing a specific laser annealing process, the problem of high carbon precipitation after laser annealing of SiC materials was solved, achieving an ohmic contact effect with low carbon precipitation and low specific contact resistance.

CN121815728APending Publication Date: 2026-04-07ZHUZHOU CRRC TIMES SEMICON CO LTD
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Patent Information

Application Number
CN202510221132.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-27
Publication Date
2026-04-07

AI Technical Summary

Technical Problem

In existing technologies, SiC materials undergo significant carbon deposition after laser annealing, which affects the specific contact resistance of ohmic contacts and the reliability of devices. Therefore, an effective method to reduce carbon deposition is needed.

Method used

A silicon-nickel alloy layer is formed on the back side of a SiC substrate, and ohmic contacts are formed by low-energy-density pre-laser annealing and high-energy-density laser annealing, which reduces carbon precipitation and lowers carbon particle size.

Benefits of technology

It effectively reduces the amount and size of carbon precipitation after SiC laser annealing, forms good ohmic contact, and has a low specific contact resistivity.

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Abstract

The invention provides a method for reducing the laser annealing carbon precipitation amount of a SiC material and the SiC material. The method comprises the steps that (1) a silicon-nickel alloy layer is formed on the back face of a SiC substrate; (2) laser annealing treatment is carried out on the surface of the formed silicon-nickel alloy layer, so that ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate; by adopting the method disclosed by the invention, not only can the precipitation of carbon be effectively reduced and the particle size of the precipitated carbon be reduced, but also good ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate, and the specific contact resistivity is relatively low.
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