A super-miniaturized and low-power Ka-band dual-frequency T / R module

Abstract

The present invention provides a super-miniaturized and low-power Ka dual-frequency T / R module, which includes a housing, a front input / output interface, a rear input / output interface, and a video interface provided on one side of the housing, a front component antenna docking interface and a rear component antenna docking interface provided on the other side of the housing, a front transceiver component provided on the front inside of the housing, and a rear transceiver component provided on the rear inside of the housing. One end of the front transceiver component is electrically connected to the front input / output interface, and the other end is electrically connected to the front component antenna docking interface. One end of the rear transceiver component is electrically connected to the rear input / output interface, and the other end is electrically connected to the rear component antenna docking interface. The video interface is used to provide independent power supply signals and control signals for the front transceiver component and the rear transceiver component respectively. The present invention provides eight identical radio frequency channels on both the front and the rear, ensuring phase consistency and optimizing the circuit structure, realizing the standardized design of the module, and being more conducive to the automated production of products.

Description

Technical Field

[0001] The present invention relates to the technical field of basic electrical components, and particularly to a super-miniaturized and low-power Ka dual-band T / R module. Background Art

[0002] Active phased array antenna systems are increasingly widely used. Due to limited resources, the system has increasingly stringent requirements for indicators such as the weight and power consumption of the whole machine. As the core part of the active phased array antenna system, the T / R module has functions such as transmission amplification, amplitude-phase control, and beam forming of radio frequency signals, which play a decisive role in the performance of the entire phased array system. Its indicators directly affect the indicators of the whole machine. That is, the research on the light weight and low power consumption of the T / R module is of great significance.

[0003] Therefore, there is an urgent need for a light-weight and low-power T / R module. Summary of the Invention

[0004] The present invention is to solve the problems of large weight and high power consumption of the T / R module, and provides a super-miniaturized and low-power Ka dual-band T / R module. On a module with a height of 7.4 mm, dual-sided 8-channel, that is, 16-channel T / R integration is achieved, reducing the weight of the module by half. Eight consistent radio frequency channels can ensure the phase consistency, optimize the circuit structure, realize the standardized design of the module, and is more conducive to the automated production of products and improve the batch production efficiency; the positive and negative dual-band T / R module can, according to different task requirements, realize functions such as simultaneous transceiver on the front and back sides or time-sharing transceiver on a single side, and flexibly realize various communication modes of the system; two transceiver integrated amplifier chips, one transceiver amplitude-phase multifunctional chip, two power management chips, and one level drive amplifier chip are used in the whole circuit. The transceiver integrated amplifier chip adopts a self-biased design principle inside, without grid voltage, making the circuit principle more concise and greatly improving the reliability of the product; customizing a high-efficiency transceiver integrated amplifier chip to optimize both the transmission efficiency and the receiving power consumption, and using a silicon-based integrated power management chip instead of the traditional gallium arsenide integrated chip, greatly reducing the power consumption of the whole machine.

[0005] The present invention provides a super-miniaturized and low-power Ka dual-band T / R module, including a housing, a front input / output interface, a back input / output interface, and a video interface provided on one side of the housing, a front module antenna docking interface and a back module antenna docking interface provided on the other side of the housing, a front transceiver module provided inside the front of the housing, and a back transceiver module provided inside the back of the housing. One end of the front transceiver module is electrically connected to the front input / output interface, and the other end is electrically connected to the front module antenna docking interface. One end of the back transceiver module is electrically connected to the back input / output interface, and the other end is electrically connected to the back module antenna docking interface. The video interface is used to provide independent power supply signals and control signals for the front transceiver module and the back transceiver module respectively;

[0006] The front transceiver component and the back transceiver component independently perform radio frequency signal transmission and amplification, and both the front transceiver component and the back transceiver component include at least two radio frequency channels;

[0007] Both the front transceiver component and the back transceiver component are provided with a level driver chip, a power management chip, and a passive transceiver integrated amplitude-phase chip. The level driver chip is used to amplify the input control signal and then output it to the power management chip.

[0008] In a preferred embodiment, for the ultra-small and low-power Ka dual-band T / R component of the present invention, the components of the front transceiver component and the back transceiver component are the same. Both the front transceiver component and the back transceiver component include eight radio frequency channels. There are eight antenna docking interfaces for the front component and eight for the back component. The antenna docking interfaces of the front component and the back component are arranged in two rows at equal intervals. The video interface includes twenty-five video pins, and the power management chip is a silicon-based integrated power management chip;

[0009] The front transceiver component is used for radio frequency transmission and amplification at Ka frequency F1, and the back transceiver component is used for radio frequency transmission and amplification at Ka frequency F2.

[0010] In a preferred embodiment, for the ultra-small and low-power Ka dual-band T / R component of the present invention, both the front transceiver component and the back transceiver component transmit radio frequency signals through microstrip lines, and both the front transceiver component and the back transceiver component are provided with microstrip power dividers.

[0011] In a preferred embodiment, for the ultra-small and low-power Ka dual-band T / R component of the present invention, the front transceiver component includes a common drive amplifier electrically connected to the front input / output interface, a microstrip power divider electrically connected to the output end of the common drive amplifier, at least two radio frequency units connected to the microstrip power divider, a first power management chip electrically connected to the common drive amplifier, and a level driver chip electrically connected to the first power management chip;

[0012] The front radio frequency unit includes a phase-amplitude control link and a transceiver integrated amplifier chip that are sequentially electrically connected to the microstrip power divider. The transceiver integrated amplifier chip is electrically connected to the antenna docking interface of the front component. The phase-amplitude control link is used for phase shifting of radio frequency signals, and the transceiver integrated amplifier chip is used for amplification of radio frequency signals;

[0013] The level driver chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the first power management chip. The first power management chip is used to provide drain voltage power supply for the front common drive amplifier.

[0014] For a super miniaturized and low-power Ka-band dual-frequency T / R module according to the present invention, as a preferred embodiment, the front transceiver module further includes a second power management chip electrically connected to the amplitude and phase control link, the transceiver integrated amplifier chip, and the level driver chip. The number of the second power management chips is the same as that of the radio frequency units. The second power management chip is used to convert serial data into parallel data and output it to the amplitude and phase control link for amplitude and phase control and radio frequency switching. The second power management chip is used to provide drain voltage power supply for the transceiver integrated amplifier chip. The level driver chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, and SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, and SYN and then output them to the second power management chip;

[0015] The microstrip power divider is a 1:8 microstrip power divider;

[0016] The amplitude and phase control link is a passive transceiver amplitude and phase chip;

[0017] The first power management chip is internally provided with a switch, a switch driver, and protection for non-simultaneous transceiver operations. The second power management chip is internally provided with a switch, a switch driver, protection for non-simultaneous transceiver operations, and serial-to-parallel conversion. The data signal DA of the second power management chip is used in series in a daisy chain form. Both the first power management chip and the second power management chip are silicon-based integrated power management chips.

[0018] For a super miniaturized and low-power Ka-band dual-frequency T / R module according to the present invention, as a preferred embodiment, the back transceiver module includes a common driver amplifier electrically connected to the back input / output interface, a microstrip power divider electrically connected to the output end of the common driver amplifier, at least two radio frequency units connected to the back microstrip power divider, a first power management chip electrically connected to the common driver amplifier, and a level driver chip electrically connected to the first power management chip;

[0019] The radio frequency unit includes an amplitude and phase control link and a transceiver integrated amplifier chip that are sequentially electrically connected to the microstrip power divider. The transceiver integrated amplifier chip is electrically connected to the antenna docking interface of the back module. The amplitude and phase control link is used to perform phase shift of radio frequency signals, and the transceiver integrated amplifier chip is used to amplify radio frequency signals;

[0020] The level driver chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, and SYNIN to generate control signals EN, DA, T_T, T_R, CLK, and SYN and then output them to the first power management chip. The first power management chip is used to provide drain voltage power supply for the back common driver amplifier.

[0021] A super-miniaturized and low-power Ka dual-band T / R module according to the present invention. As a preferred embodiment, the reverse transceiver module further includes a second power management chip electrically connected to the amplitude-phase control link, the transceiver integrated amplifier chip, and the level driver chip. The number of the second power management chips is the same as the number of the radio frequency units. The second power management chip is used to convert serial data into parallel data and output it to the amplitude-phase control link for amplitude-phase control and radio frequency switching. The second power management chip is used to provide drain voltage power supply for the transceiver integrated amplifier chip. The level driver chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, and SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, and SYN and then output them to the second power management chip;

[0022] The microstrip power divider is a 1:8 microstrip power divider;

[0023] The amplitude-phase control link is a transceiver amplitude-phase multi-functional chip;

[0024] The first power management chip is provided with a switch, a switch driver, and protection against simultaneous transceiver operations inside. The second power management chip is provided with a switch, a switch driver, protection against simultaneous transceiver operations, and serial-parallel conversion inside. The data signal DA of the second power management chip is used in series in a daisy chain form. Both the first power management chip and the second power management chip are silicon-based integrated power management chips.

[0025] A super-miniaturized and low-power Ka dual-band T / R module according to the present invention. As a preferred embodiment, both the front transceiver module and the reverse transceiver module include a radio frequency main board and a DC control board. The radio frequency main board and the DC control board are connected by gold wire bonding. The thickness of the chips on the radio frequency main board is thinner than that of the chips on the DC control board. A safety distance is set between the front radio frequency main board and the DC control board and the cover plate.

[0026] A super-miniaturized and low-power Ka dual-band T / R module according to the present invention. As a preferred embodiment, the surface layer of the radio frequency main board is used for radio frequency transmission, and the inside is used for control and DC power supply;

[0027] The radio frequency main board is a seven-layer board with a thickness of 1.1 mm, and the DC control board is a three-layer board. Filter capacitors and level driver chips are arranged on the upper part of the DC control board.

[0028] A super-miniaturized and low-power Ka dual-band T / R module according to the present invention. As a preferred embodiment, it further includes a radio frequency switch for switching to the R branch or the T branch;

[0029] The video interface is a double-row video socket.

[0030] One of the technical solutions of the present invention is: a ultra-miniaturized Ka dual-band T / R module, characterized in that: due to the element spacing of the two-dimensional phased array antenna being 7.6 mm, on the structure with a single module height of 7.4 mm, the transmission of the dual-band mode is realized in the form of front and back sides. The topological structures of the two sides are basically the same, only the positions of the transmit input (receive output) interfaces on the front and back sides are staggered. A double-row video socket is shared by the front and back sides, and the signals of the two rows of sockets are completely independent, providing independent power supply and control signals for the front and back sides respectively. The front side realizes the radio frequency transmission and amplification of F1 at the Ka frequency, and the back side realizes the radio frequency transmission and amplification of F2 at the Ka frequency, and both are eight-channel integrated T / R modules, and the radio frequency transmission structures of each channel are basically the same.

[0031] The principle of the above solution is: To achieve the EIRP and G / T values of the two-dimensional phased array antenna, a considerable number of T / R modules are required. Limited by the structural dimensions, weight, element spacing and other conditions of the two-dimensional phased array antenna system, the volume of the T / R module is strictly limited. The present invention adopts a double-sided structural form, arranges the antenna elements of F1 and F2 at equal intervals alternately, and only adds corresponding filters at the drive stage to realize the filtering and suppression of relative frequency points, reasonably layout the inside of the module, make the topological structures of the front and back sides basically the same, and realize the design of a highly integrated ultra-miniaturized module.

[0032] Another technical solution of the present invention is: a ultra-miniaturized dual-band T / R module, characterized in that: the principles and components of each side are the same. The radio frequency devices are composed of two low-power and high-efficiency transceiver integrated amplifier chips and one transceiver integrated amplitude-phase chip. The radio frequency transmission performance frequency of the radio frequency devices can cover F1 and F2. The DC control chip is composed of two power management integrated chips. In addition, in order to improve the driving ability of the control signal, the control signal is amplified by a level driving chip and then connected to the power management integrated chip.

[0033] The principle of the above solution is: To achieve the EIRP and G / T values of the two-dimensional phased array antenna, a considerable number of T / R modules are required. Limited by the overall power consumption of the two-dimensional phased array antenna, higher requirements are put forward for the transmission efficiency and receiving power consumption of a single module. Silicon-based integrated power management chips are used to replace traditional gallium arsenide integrated chips, and passive transceiver integrated amplitude-phase chips are customized, so that the power consumption is greatly reduced. On this basis, high-efficiency transceiver integrated amplifier chips are customized, so that both the transmission efficiency and the receiving power consumption reach the optimum, thereby realizing the ultra-low power consumption of the module.

[0034] The present invention has the following advantages:

[0035] (1) Double-sided 8-channel, i.e., 16-channel T / R integration, is achieved on a component with a height of 7.4 mm, reducing the weight of the component by half. Eight consistent radio frequency channels can ensure phase consistency, optimize the circuit structure, achieve the standardized design of the module, be more conducive to the automated production of products, and improve the mass production efficiency.

[0036] (2) The positive and negative dual-frequency T / R components can, according to different mission requirements, achieve functions such as simultaneous transceiver on the positive and negative sides or time-division transceiver on a single side, flexibly realizing various communication modes of the system.

[0037] (3) Two transceiver integrated amplifier chips, one transceiver amplitude-phase multifunctional chip, two power management chips, and one level drive amplifier chip are used in the entire circuit. The transceiver integrated amplifier chip adopts a self-biased design principle and does not require a gate voltage, making the circuit principle more concise and greatly improving the reliability of the product.

[0038] (4) Customize a high-efficiency transceiver integrated amplifier chip to optimize both the transmission efficiency and the receiving power consumption. Use a silicon-based integrated power management chip to replace the traditional gallium arsenide integrated chip, greatly reducing the overall power consumption of the machine. Description of the Drawings

[0039] Figure 1 It is a front view of the front structure of a super miniaturized and low-power Ka dual-frequency TR component;

[0040] Figure 2 It is a front view of the rear structure of a super miniaturized and low-power Ka dual-frequency TR component;

[0041] Figure 3 It is a schematic diagram of the internal front layout of a super miniaturized and low-power Ka dual-frequency TR component;

[0042] Figure 4 It is a schematic diagram of the internal reverse layout of a super miniaturized and low-power Ka dual-frequency TR component

[0043] Figure 5 It is a schematic diagram of the principle of a super miniaturized and low-power Ka dual-frequency TR component.

[0044] Reference Signs:

[0045] 1. Housing; 2. Front input / output interface; 3. Rear input / output interface; 4. Video interface; 5. Front component antenna docking interface; 6. Rear component antenna docking interface; 7. Front transceiver component; 71. Common driver amplifier; 72. Microstrip power divider; 73. RF unit; 731. Amplitude-phase control link; 732. Transceiver integrated amplifier chip; 74. First power management chip; 75. Level driver chip; 76. Second power management chip; 8. Rear transceiver component; A. RF main board; B. DC control board. Detailed implementation mode

[0046] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0047] Embodiment 1

[0048] As Figures 1 to 4 shown, a super miniaturized and low-power Ka dual-band T / R component includes a housing 1, a front input / output interface 2, a rear input / output interface 3, and a video interface 4 provided on one side of the housing 1, and a front component antenna docking interface 5 and a rear component antenna docking interface 6 provided on the other side of the housing 1. A front transceiver component 7 is provided on the front inside of the housing 1, and a rear transceiver component 8 is provided on the rear inside of the housing 1. One end of the front transceiver component 7 is electrically connected to the front input / output interface 2, and the other end is electrically connected to the front component antenna docking interface 5. One end of the rear transceiver component 8 is electrically connected to the rear input / output interface 3, and the other end is electrically connected to the rear component antenna docking interface 6. The video interface 4 is used to provide independent power supply signals and control signals for the front transceiver component 7 and the rear transceiver component 8 respectively;

[0049] The front transceiver component 7 and the rear transceiver component 8 independently perform radio frequency signal transmission and amplification, and both the front transceiver component 7 and the rear transceiver component 8 include at least two radio frequency channels;

[0050] Both the front transceiver component 7 and the rear transceiver component 8 are provided with a level driver chip, a power management chip, and a passive transceiver integrated amplitude-phase chip. The level driver chip is used to amplify the input control signal and output it to the power management chip;

[0051] The components of the front transceiver component 7 and the rear transceiver component 8 are the same. Both the front transceiver component 7 and the rear transceiver component 8 include eight radio frequency channels. Both the front component antenna docking interface 5 and the rear component antenna docking interface 6 are eight. The front component antenna docking interface 5 and the rear component antenna docking interface 6 are arranged in two rows at equal intervals. The video interface 4 includes twenty-five video pins. The power management chip is a silicon-based integrated power management chip;

[0052] The front transceiver component 7 is used for radio frequency transmission and amplification at Ka frequency F1, and the back transceiver component 8 is used for radio frequency transmission and amplification at Ka frequency F2;

[0053] Both the front transceiver component 7 and the back transceiver component 8 transmit radio frequency signals through microstrip lines, and both the front transceiver component 7 and the back transceiver component 8 are provided with microstrip power dividers;

[0054] As Figure 5 shown, the front transceiver component 7 includes a common drive amplifier 71 electrically connected to the front input / output interface 2, a microstrip power divider 72 electrically connected to the output end of the common drive amplifier 71, at least two radio frequency units 73 connected to the microstrip power divider 72, a first power management chip 74 electrically connected to the common drive amplifier 71, a level drive chip 75 electrically connected to the first power management chip 74, and a second power management chip 76 electrically connected to the phase and amplitude control link 731, the transceiver integrated amplifier chip 732, and the level drive chip 75;

[0055] The front radio frequency unit 73 includes a phase and amplitude control link 731 and a transceiver integrated amplifier chip 732 sequentially electrically connected to the microstrip power divider 72. The transceiver integrated amplifier chip 732 is electrically connected to the front component antenna docking interface 5. The phase and amplitude control link 731 is used for phase shifting of radio frequency signals, and the transceiver integrated amplifier chip 732 is used for amplification of radio frequency signals;

[0056] The level drive chip 75 is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the first power management chip 74. The first power management chip 74 is used to provide drain voltage power supply for the front common drive amplifier 71;

[0057] The number of the second power management chips 76 is the same as that of the radio frequency units 73. The second power management chip 76 is used to convert serial data into parallel output to the phase and amplitude control link 731 for amplitude and phase control and radio frequency switching. The second power management chip 76 is used to provide drain voltage power supply for the transceiver integrated amplifier chip 732. The level drive chip 75 is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the second power management chip 76;

[0058] The microstrip power divider 72 is a 1:8 microstrip power divider;

[0059] The phase and amplitude control link 731 is a passive transceiver amplitude and phase chip;

[0060] The first power management chip 74 is provided with a switch, a switch driver and protection against simultaneous transceiver operations inside. The second power management chip 76 is provided with a switch, a switch driver, protection against simultaneous transceiver operations and serial-to-parallel conversion inside. The data signal DA of the second power management chip 76 is used in series in a daisy chain form. Both the first power management chip 74 and the second power management chip 76 are silicon-based integrated power management chips;

[0061] As Figure 5 shown, the reverse transceiver assembly includes a common drive amplifier electrically connected to the reverse input / output interface 3, a microstrip power divider electrically connected to the output end of the common drive amplifier, at least two radio frequency units connected to the reverse microstrip power divider, a first power management chip electrically connected to the common drive amplifier, a level drive chip electrically connected to the first power management chip, and a second power management chip electrically connected to the phase and amplitude control link, the transceiver integrated amplifier chip, and the level drive chip;

[0062] The radio frequency unit includes a phase and amplitude control link and a transceiver integrated amplifier chip that are sequentially electrically connected to the microstrip power divider. The transceiver integrated amplifier chip is electrically connected to the reverse assembly antenna docking interface 6. The phase and amplitude control link is used for phase shifting of radio frequency signals, and the transceiver integrated amplifier chip is used for amplification of radio frequency signals;

[0063] The level drive chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN to generate the control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the first power management chip. The first power management chip is used to provide drain voltage power supply for the reverse common drive amplifier;

[0064] The number of the second power management chips is the same as the number of the radio frequency units. The second power management chip is used to convert serial data into parallel data and output it to the phase and amplitude control link for phase and amplitude control and radio frequency switching. The second power management chip is used to provide drain voltage power supply for the transceiver integrated amplifier chip. The level drive chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN respectively to generate the control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the second power management chip;

[0065] The microstrip power divider is a 1:8 microstrip power divider;

[0066] The phase and amplitude control link is a transceiver phase and amplitude multifunctional chip;

[0067] The first power management chip is internally provided with a switch, a switch driver, and protection against simultaneous transceiver operations. The second power management chip is internally provided with a switch, a switch driver, protection against simultaneous transceiver operations, and serial-parallel conversion. The data signal DA of the second power management chip is used in series in a daisy chain form. Both the first power management chip and the second power management chip are silicon-based integrated power management chips;

[0068] Both the front transceiver module 7 and the back transceiver module 8 include a radio frequency main board A and a DC control board B. The radio frequency main board A and the DC control board B are connected by gold wire bonding. The thickness of the chips on the radio frequency main board A is thinner than that of the chips on the DC control board B. A safety distance is set between the front radio frequency main board A and the DC control board B and the cover plate;

[0069] The surface layer of the radio frequency main board A is used for radio frequency transmission, and the inside is used for control and DC power supply;

[0070] The radio frequency main board A is a seven-layer board with a thickness of 1.1 mm, and the DC control board B is a three-layer board. Filter capacitors and level driver chips are arranged on the upper part of the DC control board B;

[0071] It also includes a radio frequency switch for switching to the R branch or the T branch;

[0072] The video interface 4 is a double-row video socket.

[0073] Embodiment 2

[0074] As Figures 1 to 4 shown, a super-small and low-power Ka dual-band T / R module;

[0075] As Figure 1 shown, it is a basic structural outline drawing of a super-small Ka dual-band T / R module. 1 is its structural body, 2 is the front transmit input (receive output) interface, 3 is the back transmit input (receive output) interface, 4 is the video interface, 5 is the front 1-8 channel antenna docking interface, and 6 is the back 1-8 channel antenna docking interface.

[0076] As Figure 5 shown, it is a principle block diagram of a super-small Ka dual-band T / R module. The principles of the front and back sides are the same. Taking the front side as an example, the circuit mainly includes two parts. One part is the radio frequency signal amplification and amplitude-phase control link, and the other part is the DC control circuit. When transmitting, the radio frequency switch switches to the T branch, and the signal enters the common drive stage A17 of the module through the T branch of the drive module, and then is distributed to 8 transmit units by a 1:8 microstrip power divider, and is sent to the antenna unit after phase shift amplification.

[0077] The receiving operation is reciprocal to the transmitting operation. The weak signal enters the transceiver integrated amplifier chip 732 via the antenna unit and the RF connector, and the RF switch is switched to the R branch. The signal is amplified by the low-noise amplifier in the R branch of the transceiver integrated amplifier chip and output to the receiving branch of the transceiver amplitude-phase multi-functional chip 731, phase-shifted as required, synthesized by the microstrip power divider network 72, and then amplified by the R branch of the common driver stage A17 and output from the common terminal of the Ka-band dual-frequency T / R module to the driver module.

[0078] Each RF unit 73 includes a transceiver amplitude-phase multi-functional 731 (A9 - A16) and a transceiver integrated amplifier chip 732 (A1 - A8).

[0079] The DC control circuit mainly includes two power management chips and one level drive amplifier chip. First, all control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN enter the level drive amplifier chip D10 for amplification to generate EN, DA, T_T, T_R, CLK, SYN, and then are sent to the corresponding interfaces of the two power management chips.

[0080] The first power management chip 74 (D9) internally includes switches, switch drivers, receive-transmit non-simultaneous protection, etc. It is jointly powered by external power supply and T_T, T_R, and mainly provides drain voltage power supplies VDR and VDT for the receiving and transmitting branches of the driver stage transceiver integrated amplifier chip A17. Each RF unit includes a second power management chip 76, and a total of 8 power management chips 2 (D1 - D8) are included in a single component to form independently controlled RF units. The power management chip 2 internally includes functions such as switches, switch drivers, receive-transmit non-simultaneous protection, serial-parallel conversion, etc. It is jointly powered by external power supply and EN, DA, T_T, T_R, CLK, SYN, and provides drain voltage power supplies (VDR1 - VDR8, VDT1 - VDT8) for the receiving and transmitting branches of the transceiver integrated amplifier chips (A1 - A8) of each RF unit. Among them, the data signal DA is used in series in a daisy chain form, serially input through the eighth channel on the front side, and the serial output DA1 of the data in the eighth channel is connected to the data input of the seventh channel, and so on, and the serial data is converted into parallel data and sent to the amplitude-phase multi-functional chips (A9 - A16) of each RF unit to realize the amplitude-phase control and RF switching (SW11 - SW81, SW12 - SW82) functions. The RF switching (SW01, SW02) of the common stage A17 is realized through the logical relationship of the complementary data output bits (A0P, A0N) of the data initially input to the power management chip 2.

[0081] Such as Figures 3 to 4As shown in the figure, it is a schematic diagram of the front and back layout of a super-miniaturized Ka dual-band T / R module. Limited by the height dimension in the cavity of the double-sided structure, the internal printed circuit board is divided into two areas, one is the RF main board A, and the other is the DC control board B. The signals between the two boards are connected in the form of gold wire bonding. Among them, the RF main board mainly places chips with a thickness of less than 0.3 mm. This board is a seven-layer multi-layer board with a board thickness of 1.1 mm. The surface layer is used for RF transmission, and the inside is used to reasonably distribute the control and DC power supply of eight channels. The isolation resistors R1 to R7 of the power distribution network use chip resistors with a thickness of 0.1 mm and are connected in the form of gold wire bonding. The DC control board is mainly used to place filter capacitors, level drive and amplification chips with a thickness greater than 0.3 mm. This board is a three-layer board with a board thickness of 0.3 mm. The sub-board scheme is adopted to make the height of all components in the cavity reach equilibrium, and there is a certain safety distance from the cover board.

[0082] Pins 1 to 13 of the video socket are used for front signal transmission, and pins 14 to 25 are used for back signal transmission. Due to the different positions of the video socket X10 and the RF common ports XA9 / XB9, the layouts of the front DC control board A and the back DC control board B are different, and there are also minor differences between the front RF main board 1 and the back RF main board 1.

[0083] In the RF aspect of a super-miniaturized Ka dual-band T / R module, it is mainly transmitted through microstrip lines. In the RF transmission layout, considering the external mounting holes of the module, the transmission consistency of eight channels, ease of mass production, and avoidance of gold wires near the wall and other manufacturability, the internal transmission network is optimized. Taking the front RF transmission as an example, the RF signal enters the module through XA9, passes through the transmission line W1, and then enters a one-way power distribution network after being driven and amplified by A17. The first channel passes through the amplitude-phase multifunction of A9, then passes through the transmission line W2, and then passes through the amplifier A1 and is output to the RF connector XA1 through the transmission line W3, and so on. W4 to W17 are the RF transmission lines of the remaining 7 channels, and the same applies to the back.

[0084] As mentioned above, it is only the preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and all should be covered within the protection scope of the present invention.

Claims

1. A super miniaturized and low-power Ka-band dual-frequency T / R module, characterized in that: It includes a housing (1), a front input / output interface (2), a rear input / output interface (3), and a video interface (4) provided on one side of the housing (1), a front component antenna docking interface (5) and a rear component antenna docking interface (6) provided on the other side of the housing (1), a front transceiver component (7) provided on the front inside of the housing (1), and a rear transceiver component (8) provided on the rear inside of the housing (1). One end of the front transceiver component (7) is electrically connected to the front input / output interface (2), and the other end is electrically connected to the front component antenna docking interface (5). One end of the rear transceiver component (8) is electrically connected to the rear input / output interface (3), and the other end is electrically connected to the rear component antenna docking interface (6). The video interface (4) is used to provide independent power supply signals and control signals for the front transceiver component (7) and the rear transceiver component (8) respectively; The front transceiver component (7) and the rear transceiver component (8) independently perform radio frequency signal transmission and amplification, and both the front transceiver component (7) and the rear transceiver component (8) include at least two radio frequency channels; Both the front transceiver component (7) and the rear transceiver component (8) are provided with a level driving chip, a power management chip, and a passive transceiver integrated amplitude-phase chip. The level driving chip is used to amplify the input control signal and output it to the power management chip; Both the front transceiver component (7) and the rear transceiver component (8) include a transceiver integrated amplifier chip, a transceiver amplitude-phase multi-functional chip, a power management chip, and a level driving and amplifying chip. The transceiver integrated amplifier chip adopts a self-biased design principle and does not require a gate voltage. The power management chip is a silicon-based integrated power management chip.

2. The ultra-miniaturized low-power Ka-band dual-frequency T / R module according to claim 1, wherein: The components of the front transceiver component (7) and the rear transceiver component (8) are the same. Both the front transceiver component (7) and the rear transceiver component (8) include eight radio frequency channels. Both the front component antenna docking interface (5) and the rear component antenna docking interface (6) are eight. The front component antenna docking interface (5) and the rear component antenna docking interface (6) are arranged in two rows at equal intervals. The video interface (4) includes twenty-five video pins. The power management chip is a silicon-based integrated power management chip; The front transceiver component (7) is used for radio frequency transmission and amplification at Ka frequency F1, and the rear transceiver component (8) is used for radio frequency transmission and amplification at Ka frequency F2.

3. The ultra-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 1, wherein: Both the front transceiver component (7) and the rear transceiver component (8) transmit radio frequency signals through microstrip lines, and both the front transceiver component (7) and the rear transceiver component (8) are provided with microstrip power dividers.

4. The ultra-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 1, wherein: The front transceiver component (7) includes a common drive amplifier (71) electrically connected to the front input / output interface (2), a microstrip power divider (72) electrically connected to the output end of the common drive amplifier (71), at least two radio frequency units (73) connected to the microstrip power divider (72), a first power management chip (74) electrically connected to the common drive amplifier (71), and a level drive chip (75) electrically connected to the first power management chip (74); The front radio frequency unit (73) includes a radiation phase control link (731) and a transceiver integrated amplifier chip (732) sequentially electrically connected to the microstrip power divider (72). The transceiver integrated amplifier chip (732) is electrically connected to the front component antenna docking interface (5). The radiation phase control link (731) is used for phase shifting of radio frequency signals, and the transceiver integrated amplifier chip (732) is used for amplifying radio frequency signals; The level drive chip (75) is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN to generate control signals EN, DA, T_T, T_R, CLK, SYN respectively and then output them to the first power management chip (74). The first power management chip (74) is used to provide drain voltage power supply for the front common drive amplifier (71).

5. The ultra-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 4, wherein: The front transceiver component (7) further includes a second power management chip (76) electrically connected to the radiation phase control link (731), the transceiver integrated amplifier chip (732), and the level drive chip (75). The number of the second power management chips (76) is the same as the number of the radio frequency units (73). The second power management chip (76) is used to convert serial data into parallel data and output it to the radiation phase control link (731) for amplitude-phase control and radio frequency switching. The second power management chip (76) is used to provide drain voltage power supply for the transceiver integrated amplifier chip (732). The level drive chip (75) is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN to generate control signals EN, DA, T_T, T_R, CLK, SYN respectively and then output them to the second power management chip (76); The microstrip power divider (72) is a 1:8 microstrip power divider; The radiation phase control link (731) is a passive transceiver amplitude-phase chip; The first power management chip (74) is provided with a switch, a switch driver, and transceiver non-simultaneous protection inside. The second power management chip (76) is provided with a switch, a switch driver, transceiver non-simultaneous protection, and serial-parallel conversion inside. The data signal DA of the second power management chip (76) is used in series in a daisy chain form. Both the first power management chip (74) and the second power management chip (76) are silicon-based integrated power management chips.

6. The ultra-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 1, wherein: The reverse transceiver component includes a common drive amplifier electrically connected to the reverse input / output interface (3), a microstrip power divider electrically connected to the output end of the common drive amplifier, at least two radio frequency units connected to the reverse microstrip power divider, a first power management chip electrically connected to the common drive amplifier, and a level drive chip electrically connected to the first power management chip; The radio frequency unit includes a radiation phase control link and a transceiver integrated amplifier chip sequentially electrically connected to the microstrip power divider. The transceiver integrated amplifier chip is electrically connected to the reverse component antenna docking interface (6). The radiation phase control link is used for phase shifting of radio frequency signals, and the transceiver integrated amplifier chip is used for amplifying radio frequency signals; The level drive chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN to generate control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the first power management chip. The first power management chip is used to provide drain voltage power supply for the reverse common drive amplifier.

7. The ultra-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 6, wherein: The reverse transceiver component further includes a second power management chip electrically connected to the radiation phase control link, the transceiver integrated amplifier chip, and the level drive chip. The number of the second power management chips is the same as the number of the radio frequency units. The second power management chip is used to convert serial data into parallel and output it to the radiation phase control link for amplitude-phase control and radio frequency switching. The second power management chip is used to provide drain voltage power supply for the transceiver integrated amplifier chip. The level drive chip is used to amplify the control signals ENIN, DAIN, T_TIN, T_RIN, CLKIN, SYNIN respectively to generate control signals EN, DA, T_T, T_R, CLK, SYN and then output them to the second power management chip; The microstrip power divider is a 1:8 microstrip power divider; The radiation phase control link is a transceiver amplitude-phase multifunctional chip; The first power management chip is provided with a switch, a switch driver and transceiver non-simultaneous protection inside. The second power management chip is provided with a switch, a switch driver, transceiver non-simultaneous protection and serial-parallel conversion inside. The data signal DA of the second power management chip is used in series in a daisy chain form. Both the first power management chip and the second power management chip are silicon-based integrated power management chips.

8. A super-miniaturized and low-power Ka-band dual-frequency T / R module according to claim 1, characterized in that: The front transceiver component (7) and the reverse transceiver component (8) both include a radio frequency main board (A) and a DC control board (B). The radio frequency main board (A) and the DC control board (B) are connected by gold wire bonding. The thickness of the chips on the radio frequency main board (A) is thinner than the thickness of the chips on the DC control board (B). A safety distance is set between the front radio frequency main board (A), the DC control board (B) and the cover plate.

9. The ultra-miniaturized low-power Ka dual-band T / R module according to claim 8, wherein: The surface layer of the radio frequency main board (A) is used for radio frequency transmission, and the inside is used for control and DC power supply; The radio frequency main board (A) is a seven-layer board with a board thickness of 1.1 mm, the DC control board (B) is a three-layer board, and filter capacitors and level driving chips are arranged on the upper part of the DC control board (B).

10. The ultra-miniaturized low-power Ka-band dual-frequency T / R module according to claim 1, characterized in that: It further includes a radio frequency switch for switching to the R branch or the T branch; The video interface (4) is a double-row video socket.

Images