Support unit and substrate processing device including the same

Abstract

The present invention relates to a support unit and a substrate processing device including the support unit. The substrate processing device includes: a chamber having a processing space inside the chamber; a support unit configured to support a substrate; a gas supply unit configured to supply gas into the processing space; and a plasma source configured to generate plasma, wherein the support unit includes: a support plate on which the substrate is positioned; a ring assembly surrounding the support plate and having an annular electrode; and a voltage applying unit configured to control the incident angle of the plasma on the substrate by applying a voltage to the annular electrode, wherein the voltage applying unit includes: a bottom plate of a conductive material; a DC power supply configured to apply a DC voltage to the bottom plate; and a plurality of connectors connecting the bottom plate and the annular electrode, formed of a conductive material.

Description

[0001] This application is a divisional application of the Chinese invention patent application with the application date of October 30, 2018, application number 201811276800.0, and invention name “Support unit and substrate processing device including the support unit”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims priority to and the benefit of Korean Patent Application No. 10-2017-0142659, filed on October 30, 2017, in the Korean Industrial Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0004] Embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method that adjust an incident angle of plasma onto a substrate. Background Art

[0005] Semiconductor manufacturing processes may include a process of treating a substrate using plasma. For example, in an etching process of a semiconductor process, a thin film on a substrate may be removed using plasma.

[0006] In substrate processing processes, such as plasma etching, it is necessary to expand the plasma region to the periphery of the substrate to improve process uniformity around the substrate. To this end, a ring member capable of electric field coupling is positioned around the substrate support, and an annular insulator is used to electrically isolate the ring assembly from the lower module of the equipment.

[0007] Meanwhile, the ring member includes a material such as Si, SiC, or quartz, and as the ring member is worn or etched by collisions with ions generated during the plasma process, the potential of the plasma sheath decreases over time. Figure 7 In the embodiment, although the plasma ions have an angle on the substrate before the ring member is worn or etched, when the ring member is worn or etched, the plasma ions have an angle on the substrate. Figure 8 In the process, the angle of ions input to the extreme edge of the substrate gradually deflects toward the center of the substrate. Therefore, the process changes, and as a result, the profile of the pattern on the substrate deflects. Summary of the Invention

[0008] Embodiments of the inventive concept provide a support unit that can control an incident angle of plasma onto a substrate, and a substrate treating apparatus including the support unit.

[0009] Problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and those skilled in the art to which the present inventive concept pertains will clearly understand unmentioned problems from the specification and the accompanying drawings.

[0010] According to one aspect of the present invention, a substrate processing device is provided, comprising: a chamber having a processing space inside the chamber; a support unit configured to support a substrate in the processing space; a gas supply unit configured to supply gas into the processing space; and a plasma source configured to generate plasma from the gas, wherein the support unit further comprises: a support plate on which the substrate is positioned; a ring assembly surrounding the support plate and having an annular electrode; and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the annular electrode, wherein the voltage applying unit comprises: a base plate of a conductive material; a DC power source configured to apply a DC voltage to the base plate; and a plurality of connectors connecting the base plate and the annular electrodes, formed of a conductive material, and spaced apart from each other.

[0011] The ring assembly may include a focus ring surrounding the substrate positioned on the support plate, and a lower ring of insulating material surrounding the support plate and disposed below the focus ring.

[0012] The annular electrode may be disposed within the lower ring, and the plurality of connectors may be disposed at equal intervals.

[0013] The bottom plate may have a ring shape, and the plurality of connectors may have a rod shape.

[0014] The base plate may include a connection member provided on one surface of the base plate, and a DC power source may be connected to the connection member of the base plate.

[0015] The ring assembly may further include a metal ring of a metallic material disposed between the focus ring and the lower ring.

[0016] The ring assembly may further include a quartz ring of quartz material disposed between the focus ring and the lower ring.

[0017] The plurality of connectors may be three rods of conductive material spaced 120 degrees apart from each other on the bottom plate.

[0018] The voltage applying unit may further include a DC filter configured to interrupt a specific radio frequency RF from the voltage supplied by the DC power source.

[0019] The DC filter may include an inductor and a capacitor.

[0020] According to another aspect of the present invention, a support unit for supporting a substrate in a plasma processing chamber is provided, the support unit comprising: a support plate on which the substrate is positioned; a ring assembly surrounding the support plate and having an annular electrode; and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the annular electrode, wherein the voltage applying unit further comprises: a base plate of a conductive material; a DC power supply configured to apply a DC voltage to the base plate; and a plurality of connectors connecting the base plate and the annular electrode, formed of a conductive material, and spaced apart from each other.

[0021] The ring assembly may further include a focus ring surrounding the substrate positioned on the support plate, and a lower ring of insulating material surrounding the support plate and disposed below the focus ring.

[0022] The annular electrode may be disposed within the lower ring, and the plurality of connectors may be disposed at equal intervals.

[0023] The bottom plate may have a ring shape, and the plurality of connectors may have a rod shape.

[0024] The plurality of connectors may be three rods of conductive material and spaced 120 degrees apart from each other on the bottom plate.

[0025] The voltage applying unit may further include a DC filter configured to interrupt a specific radio frequency RF from the voltage supplied by the DC power source.

[0026] According to yet another aspect of the present inventive concept, there is provided a method for controlling a substrate processing apparatus, the method including applying a DC voltage to the annular electrode, and controlling an incident angle of the plasma onto a substrate by adjusting the DC voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other objects and features of the present inventive concept will become apparent by describing in detail exemplary embodiments of the present inventive concept with reference to the attached drawings.

[0028] Figure 1 is an exemplary view illustrating a substrate processing apparatus according to an embodiment of the present inventive concept;

[0029] Figure 2 is an exemplary cross-sectional view illustrating a support unit according to an embodiment of the present inventive concept;

[0030] Figure 3 A view showing a bottom plate according to an embodiment of the present inventive concept;

[0031] Figure 4is a view showing a ring electrode according to an embodiment of the inventive concept;

[0032] Figure 5 1 is a circuit diagram showing another DC filter according to an embodiment of the present inventive concept;

[0033] Figure 6 is a flowchart illustrating a control method according to an embodiment of the present inventive concept; and

[0034] Figure 7 and Figure 8 are views for explaining problems of a substrate processing apparatus according to the related art. DETAILED DESCRIPTION

[0035] Hereinafter, exemplary embodiments of the present inventive concept will be described in detail with reference to the accompanying drawings.

[0036] Figure 1 FIG. 1 is an exemplary view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.

[0037] Reference Figure 1 The substrate processing apparatus 10 processes the substrate W by using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. The substrate processing apparatus 10 may include a chamber 620, a support unit 200, a showerhead 300, a gas supply unit 400, a baffle unit 500, and a plasma generating unit 600.

[0038] The chamber 620 may provide a processing space in which a substrate processing process is performed. The chamber 620 may have a processing space therein and may have a closed shape. The chamber 620 may be formed of a metal material. Further, the chamber 620 may be formed of aluminum. The chamber 620 may be grounded. An exhaust hole 102 may be formed on the bottom surface of the chamber 620. The exhaust hole 102 may be connected to an exhaust line 151. Reaction byproducts generated during the process and gases remaining in the interior space of the chamber may be discharged to the outside through the exhaust line 151. Through the exhaust process, the pressure inside the chamber 620 may be reduced to a specific pressure.

[0039] According to an embodiment, a liner 130 may be provided inside the chamber 620. The upper and lower surfaces of the liner 130 may have an open cylindrical shape. The liner 130 may be configured to contact the inner surface of the chamber 620. The liner 130 may protect the inner wall of the chamber 620 from damage due to arc discharge. In addition, the liner 130 may prevent impurities generated during the substrate treatment process from being deposited on the inner wall of the chamber 620. Alternatively, the liner 130 may not be provided.

[0040] The support unit 200 may be located inside the chamber 620. The support unit 200 may support the substrate W. The support unit 200 may include a support plate 210 configured to adsorb the substrate W using electrostatic force. Alternatively, the support unit 200 may support the substrate W using a different method, such as mechanical clamping. Hereinafter, the support unit 200 including the support plate 210 will be described.

[0041] The support unit 200 may include a support plate 210, a ring assembly 240, a lower cover 250, and a plate 270. The support unit 200 may be located inside the chamber 620 to be spaced apart upward from the bottom surface of the chamber 620.

[0042] The support plate 210 may include a dielectric plate 220 and a body 230. The support plate 210 may support a substrate W. The dielectric plate 220 may be located at the upper end of the support plate 210. The dielectric plate 220 may be made of a dielectric substance and may have a disc shape. The substrate W may be positioned on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a radius smaller than that of the substrate W. Therefore, the distal edge of the substrate W may be located outside the dielectric plate 220.

[0043] The first electrode 223, the heating unit 225, and the first supply channel 221 may be included in the interior of the dielectric plate 220. The first supply channel 221 may extend from the upper surface of the dielectric plate 220 to the lower surface of the dielectric plate 220. A plurality of first supply channels 221 are formed to be spaced apart from each other to be provided as channels through which the heat transfer medium is supplied to the bottom surface of the substrate W.

[0044] The first electrode 223 can be electrically connected to a first power source 223a. The first power source 223a can include a direct current (DC) power source. A switch 223b can be installed between the first electrode 223 and the first power source 223a. By turning the switch 223b on and off, the first electrode 223 can be electrically connected to the first power source 223a. When the switch 223b is turned on, a DC current can be applied to the first electrode 223. The current applied to the first electrode 223 can generate an electrostatic force between the first electrode 223 and the substrate W, and the substrate W can be attracted to the dielectric plate 220 by the electrostatic force.

[0045] The heating unit 225 may be located below the first electrode 223. The heating unit 225 may be electrically connected to a second power source 225a. The heating unit 225 generates heat through resistance due to the current applied to the second power source 225a. The generated heat may be transferred to the substrate W via the dielectric plate 220. The substrate W may be maintained at a specific temperature by the heat generated by the heating unit 225. The heating unit 225 may include a spiral coil.

[0046] The main body 230 may be located below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the upper surface of the main body 230 may be bonded to each other via an adhesive 236. The main body 230 may be formed of aluminum. The upper surface of the main body 230 may be positioned so that its central area is higher than its end edge areas. The central area of ​​the upper surface of the main body 230 may have an area corresponding to the bottom surface of the dielectric plate 220 and may be bonded to the bottom surface of the dielectric plate 220. The main body 230 may have a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 therein.

[0047] The first circulation channel 231 may be configured as a channel through which the heat transfer medium circulates. The first circulation channel 231 may be formed within the body 230 to have a spiral shape. Furthermore, the first circulation channel 231 may be configured such that annular channels with different radii have the same center. The first circulation channels 231 may be interconnected. The first circulation channels 231 may be formed at the same height.

[0048] The second circulation channel 232 may be configured as a channel through which the cooling fluid circulates. The second circulation channel 232 may be formed within the body 230 to have a spiral shape. Furthermore, the second circulation channel 232 may be configured so that annular channels with different radii have the same center of circle. The second circulation channels 232 may be interconnected. The second circulation channel 232 may have a larger cross-sectional area than the first circulation channel 231. The second circulation channels 232 may be formed at the same height. The second circulation channel 232 may be located below the first circulation channel 231.

[0049] The second supply channels 233 may extend upward from the first circulation channels 231 and may be provided on the upper surface of the body 230. The second supply channels 233 may correspond in number to the first supply channels 221 and may connect the first circulation channels 231 and the first supply channels 221.

[0050] The first circulation channel 231 can be connected to the heat transfer medium storage 231a via a heat transfer medium supply line 231b. The heat transfer medium can be stored in the heat transfer medium storage 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. The helium gas can be supplied to the first circulation channel 231 via the supply line 231b and can be supplied to the bottom surface of the substrate W after passing through the second supply channel 233 and the first supply channel 221 in sequence. The helium gas can serve as a medium through which the heat transferred from the plasma to the substrate W is transferred to the support plate 210.

[0051] The second circulation channel 232 may be connected to a cooling fluid reservoir 232a via a cooling fluid supply line 232c. The cooling fluid reservoir 232a may store cooling fluid. A cooler 232b may be disposed within the cooling fluid reservoir 232a. The cooler 232b may cool the cooling fluid to a specific temperature. Alternatively, the cooler 232b may be mounted on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 via the cooling fluid supply line 232c may cool the main body 230 as it circulates along the second circulation channel 232. As the main body 230 is cooled, it also cools the dielectric plate 220 and the substrate W, thereby maintaining the substrate W at a specific temperature.

[0052] The body 230 may include a metal plate. According to an embodiment, the entire body 230 may be formed of a metal plate.

[0053] The ring assembly 240 may be disposed at the end edge of the support plate 210. The ring assembly 240 may have a ring shape and may be disposed along the periphery of the dielectric plate 220. The upper surface of the ring assembly 240 is positioned such that its outer side 240a is higher than its inner side 240b. The inner side 240b of the upper surface of the ring assembly 240 may be located at the same height as the upper surface of the dielectric plate 220. The inner side 240b of the upper surface of the ring assembly 240 may support the end edge of the substrate W located outside the dielectric plate 220. The outer side 240a of the ring assembly 240 may be configured to surround the end edge of the substrate W. The ring assembly 240 may control the electromagnetic field so that the density of the plasma is uniformly distributed throughout the entire area of ​​the substrate W. As a result, the plasma is uniformly formed throughout the entire area of ​​the substrate W, so that the area of ​​the substrate W can be uniformly etched.

[0054] Specifically, the ring assembly 240 includes a focus ring 241 that surrounds a substrate positioned on the support plate 210, and a lower ring 242 that surrounds the support plate 210 and is disposed below the focus ring 241. Here, the lower ring 242 is formed of an insulating material. Furthermore, the lower ring 242 may include an annular electrode 261 within it. By adjusting the voltage applied to the annular electrode 261, the plasma sheath in the chamber 620 can be adjusted, thereby controlling the incident angle of the plasma onto the substrate.

[0055] The first ring 243 may be disposed between the focus ring 241 and the lower ring 242. Here, the first ring 243 may be a metal ring made of a metal material. As an example, the metal ring may be formed of aluminum, but the present inventive concept is not limited thereto, and the metal ring may be formed of different metal materials. As another example, the first ring 243 may be a quartz ring made of a quartz material. When the first ring 243 is a quartz ring, the incident angle of the plasma onto the substrate may be greater than when the first ring 243 is a metal ring. Furthermore, the second ring 244 may be disposed outside the focus ring 241. Here, the second ring 244 may be formed of an insulator.

[0056] The lower cover 250 may be located at the lower end of the support unit 200. The lower cover 250 may be spaced upward from the bottom surface of the chamber 620. An open-topped space 255 is formed in the interior of the lower cover 250. The outer radius of the lower cover 250 may be the same as the outer radius of the main body 230. A lifting pin module (not shown) that moves the conveyed substrate W from the outer conveying member to the support plate 210 may be located in the internal space 255 of the lower cover 250. The lifting pin module (not shown) may be spaced apart from the lower cover 250 at a specific interval. The bottom surface of the lower cover 250 may be formed of a metal material. The internal space 255 of the lower cover 250 may be provided with air. Because the dielectric constant of air is lower than that of an insulator, the air can weaken the electromagnetic field in the interior of the support unit 200.

[0057] The lower cover 250 may include a connecting member 253. The connecting member 253 may connect the outer surface of the lower cover 250 and the inner wall of the chamber 620. A plurality of connecting members 253 may be arranged on the outer surface of the lower cover 250 at specific intervals. The connecting member 253 may support the support unit 200 inside the chamber 620. Furthermore, the lower cover 250 may be connected to the inner wall of the chamber 620 to be electrically grounded. A first power supply line 223c connected to the first power source 223a, a second power supply line 225c connected to the second power source 225a, a heat transfer medium supply line 231b connected to the heat transfer medium storage 231a, and a cooling fluid supply line 232c connected to the cooling fluid storage 232a may extend into the lower cover 250 through the internal space 255 of the connecting member 253.

[0058] Plate 270 may be located between support plate 210 and lower cover 250. Plate 270 may cover the upper surface of lower cover 250. Plate 270 may have a cross-sectional area corresponding to that of body 230. Plate 270 may include an insulator. Depending on the embodiment, one or more plates 270 may be provided. Plate 270 may function to increase the electrical distance between body 230 and lower cover 250.

[0059] The shower head 300 may be located above the support unit 200 inside the chamber 620. The shower head 300 may be positioned to face the support unit 200.

[0060] The showerhead 300 may include a gas dispersing plate 310 and a support member 330. The gas dispersing plate 310 may be spaced downward from the upper surface of the chamber 620. A space may be formed between the gas dispersing plate 310 and the upper surface of the chamber 620. The gas dispersing plate 310 may be in the shape of a plate having a specific thickness. The bottom surface of the gas dispersing plate 310 may be anodized to prevent arcing caused by plasma. The gas dispersing plate 310 may have the same shape and cross-section as the support unit 200. The gas dispersing plate 310 may include a plurality of injection holes 311. The injection holes 311 may vertically pass through the upper and lower surfaces of the gas dispersing plate 310. The gas dispersing plate 310 may include a metal material.

[0061] The support member 330 may support one side of the gas diffusion plate 310. An upper end of the support member 330 may be connected to an upper surface of the chamber 620, and a lower end of the support member 330 may be connected to one side of the gas diffusion plate 310. The support member 330 may include a non-metal plate.

[0062] The gas supply unit 400 can supply process gas into the interior of the chamber 620. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be mounted at the center of the upper surface of the chamber 620. A spray hole may be formed on the bottom surface of the gas supply nozzle 410. The process gas can be supplied into the interior of the chamber 620 through the spray hole. The gas supply unit 400 may connect the gas supply nozzle 410 and the gas storage unit 430. The gas supply line 420 can supply the process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 may be mounted in the gas supply line 420. The valve 421 can open and close the gas supply line 420 and adjust the flow rate of the process gas supplied through the gas supply line 420.

[0063] The guide plate unit 500 may be located between the inner wall of the chamber 620 and the support unit 200. The guide member 510 may have a circular ring shape. The guide member 510 may have a plurality of through-holes 511. The process gas supplied to the chamber 620 may pass through the through-holes 511 of the guide member 510 and be exhausted through the exhaust holes 102. The flow of the process gas may be controlled according to the shapes of the guide member 510 and the through-holes 511.

[0064] The plasma generating unit 600 may excite the process gas in the chamber 620 to a plasma state. According to an embodiment of the inventive concept, the plasma generating unit 600 may be an inductively coupled plasma (ICP) type. In this case, as shown in FIG. Figure 1As shown, the plasma generating unit 600 may include a high frequency power source 610 configured to supply high frequency power; and a first coil 621 and a second coil 622 electrically connected to the high frequency power source 610 to receive the high frequency power.

[0065] Although it has been described in the specification that the plasma generating unit 600 is an inductively coupled plasma (ICP) type, the present inventive concept is not limited thereto, and the plasma generating unit 600 may be a capacitively coupled plasma (CCP) type.

[0066] When a CCP-type plasma source is used, an upper electrode and a lower electrode, i.e., a main body, may be included in the chamber 620. The upper electrode and the lower electrode may be arranged vertically and parallel to each other, with a processing space interposed therebetween. The upper electrode and the lower electrode may receive an RF signal from an RF power supply to receive energy for generating plasma, and the number of RF signals applied to the electrodes is not limited to one as shown. An electromagnetic field may be formed in the space between the two electrodes, and the process gas supplied into the space may be excited into a plasma state. Substrate processing processes are performed using this plasma.

[0067] Refer again Figure 1 , the first coil 621 and the second coil 622 may be disposed at positions facing the substrate W. For example, the first coil 621 and the second coil 622 may be installed above the chamber 620. The diameter of the first coil 621 may be smaller than the diameter of the second coil 622, such that the first coil 621 is located inside the upper side of the chamber 620 and the second coil 622 is located outside the upper side of the chamber 620. The first coil 621 and the second coil 622 may receive high-frequency power from the high-frequency power supply 610 to induce a time-varying magnetic field in the chamber, and thus, may excite the process gas supplied to the chamber into plasma.

[0068] Figure 2 is an exemplary cross-sectional view illustrating a support unit according to an embodiment of the present inventive concept.

[0069] Reference Figure 2 , the support unit 200 according to an embodiment of the inventive concept includes a support plate 210 , a ring assembly 240 , and a voltage applying unit 260 .

[0070] The support plate 210 supports the substrate and attracts the substrate using electrostatic force. The ring assembly 240 surrounds the support plate 210 and includes an annular electrode 261. The ring assembly 240 may include a focus ring 241, a lower ring 242, a first ring 243, and a second ring 244. The focus ring 241 may be configured to surround a substrate positioned on the support plate 210, and the lower ring 242 may be disposed on the underside of the focus ring 241 and may be configured to surround the support plate 210. The lower ring 242 may be formed of an insulating material and may include an annular electrode 261 therein. The first ring 243 is disposed between the focus ring 241 and the lower ring 242. As an example, the first ring 243 may be a metal ring made of a metal material. As another example, the first ring 243 may be a quartz ring made of a quartz material. When the first ring 243 is a quartz ring, the incident angle of the plasma on the substrate may be greater than when the first ring 243 is a metal ring. Furthermore, the second ring 244 may be disposed on the outer side of the focus ring 241. Here, the second ring 244 may be formed of an insulator.

[0071] The voltage applying unit 260 includes a base plate 262, a DC power supply 263, and a plurality of connectors 264. The base plate 262 may be formed of a conductive material and may have a ring shape. The plurality of connectors 264 may be provided on the upper surface of the base plate 262. The plurality of connectors 264 may be provided to be spaced apart from each other when connecting the base plate 262 and the ring electrode 261. The plurality of connectors 264 may be formed of a conductive material so that the voltage supplied by the DC power supply 263 may be applied to the ring electrode 261. Further, the plurality of connectors 264 may be provided to be spaced apart from each other at the same intervals. As an example, Figure 3 As shown, the plurality of connectors 264 may be three conductive material rods that are spaced apart from each other at intervals of 120 degrees on the annular bottom plate 262. Therefore, since the plurality of connectors 264 are spaced apart from each other at the same intervals on the upper surface of the annular bottom plate 262 and are directed as shown in FIG. Figure 4 Since voltage is applied to multiple locations spaced apart from each other at equal intervals in the annular electrode 261, voltage can be uniformly applied to all regions of the annular electrode 261. Therefore, the incident angle of the plasma can be uniformly controlled in all edge regions of the substrate. That is, according to embodiments of the present inventive concept, asymmetry caused by voltage imbalance due to the resistance of the annular electrode 261 can be reduced.

[0072] Further, a connection member 267 may be provided on one surface of the bottom plate 262 , and a DC power source 263 is connected to the connection member 267 , so that a voltage may be applied to the ring electrode 261 through the bottom plate 262 and the plurality of connectors 264 .

[0073] The DC power supply 263 supplies a DC voltage. By supplying a DC voltage to the annular electrode 261, the voltage applying unit 260 according to an embodiment of the present invention can change the plasma sheath to a greater extent than when supplying a high-frequency voltage, and can easily control the incident angle of the plasma onto the substrate. Further, the voltage applying unit 260 may include a DC filter 265 connected to the DC power supply 263, and can interrupt a specific RF frequency in the voltage supplied by the DC power supply 263. The DC filter 265 may include an inductor and a capacitor. As an example, as Figure 5 In the embodiment, the DC filter 265 may include a resistor, an inductor, and a variable capacitor, and may allow only the DC voltage to be applied to the ring electrode 261 by interrupting the RF frequency in addition to the DC voltage.

[0074] Figure 6 FIG. 1 is a flowchart illustrating a control method according to an embodiment of the inventive concept.

[0075] Reference Figure 6 , a control method of a substrate treating apparatus according to an embodiment of the inventive concept may include an operation of applying a DC voltage to a ring electrode ( S810 ), and an operation of controlling an incident angle of plasma onto a substrate by adjusting the DC voltage ( S820 ).

[0076] As described above, according to various embodiments of the inventive concept, the incident angle of plasma onto a substrate may be easily controlled by applying a voltage to a ring electrode.

[0077] Effects of the present inventive concept are not limited to the above-mentioned effects, and those skilled in the art to which the present inventive concept pertains can clearly understand unmentioned effects from the specification and the accompanying drawings.

[0078] It is worth noting that the above embodiments are suggested for understanding the present invention and do not limit the scope of the present invention, and different modifiable embodiments also fall within the scope of the present invention. For example, the elements shown in the embodiments of the present invention can be implemented separately, and some individual elements can be coupled to each other to achieve. It should be understood that the technical protection scope of the present invention must be determined by the technical essence of the claims, and the technical protection scope of the present invention is not limited to the meaning of the claims, but even reaches equivalent inventions.

Claims

1. A substrate processing device, comprising: a chamber having a processing space inside the chamber; a support unit configured to support a substrate in the processing space; a gas supply unit configured to supply gas into the processing space; and a plasma source configured to generate plasma from the gas, Wherein, the supporting unit further comprises: a support plate on which the substrate is positioned; an annular electrode configured to surround the support plate; and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the annular electrode, Wherein, the voltage applying unit includes: A base plate of conductive material; a DC power supply configured to apply the voltage to the base plate; and a plurality of connectors disposed outside the support plate and connecting the bottom plate and the annular electrode; and wherein the bottom plate has a ring shape and is spaced apart from the lower side of the support plate; Wherein, the plurality of connectors are formed of a conductive material.

2. The substrate processing apparatus according to claim 1, wherein: The device further includes a ring assembly, the ring assembly surrounding the circumference of the support plate; Wherein, the ring assembly comprises: a focus ring surrounding the substrate positioned on the support plate; a lower ring of insulating material surrounding the support plate and disposed below the focus ring; and The ring electrode.

3. The substrate processing apparatus according to claim 2, wherein: The annular electrode is arranged in the lower ring, and The voltage applying unit applies the voltage to the annular electrode.

4. The substrate processing apparatus according to claim 1, wherein: The plurality of connectors are spaced apart from each other at equal intervals.

5. The substrate processing apparatus according to claim 1, wherein: The bottom plate comprises: a connecting member provided on a side surface of the bottom plate, and Wherein, the DC power supply is connected to the connecting piece of the base plate. The substrate processing apparatus according to claim 1 , wherein: The voltage applying unit further includes: A DC filter is configured to interrupt a specific radio frequency (RF) from a voltage supplied by the DC power source.

7. The substrate processing apparatus according to claim 6, wherein: The DC filter includes an inductor and a capacitor.

8. A support unit for supporting a substrate in a plasma processing chamber, the support unit comprising: a support plate on which the substrate is positioned; an annular electrode configured to surround the support plate; and a voltage applying unit configured to control an incident angle of plasma onto the substrate by applying a voltage to the annular electrode, and Wherein, the voltage applying unit further includes: A base plate of conductive material; a DC power supply configured to apply the voltage to the base plate; and a plurality of connectors disposed outside the support plate and connecting the bottom plate and the annular electrode, wherein the plurality of connectors are formed of a conductive material, and The bottom plate has a ring shape and is spaced apart from a lower side of the support plate.

9. The support unit according to claim 8, wherein: The support unit further includes a ring assembly, which surrounds the support plate; Wherein, the ring assembly comprises: a focus ring surrounding the substrate positioned on the support plate; a lower ring of insulating material surrounding the support plate and disposed below the focus ring; and The ring electrode.

10. The support unit according to claim 9, wherein: The ring assembly further comprises: First Ring; and Second ring; wherein the first ring is arranged between the focus ring and the lower ring, and the second ring is arranged on the outer side of the focus ring; The voltage applying unit applies the voltage to the annular electrode.

11. The support unit according to claim 8, wherein: The voltage applying unit further includes: A DC filter is configured to interrupt a specific radio frequency (RF) from a voltage supplied by the DC power source.

12. A method for controlling the substrate processing apparatus according to claim 1, the method comprising: applying the voltage to the ring assembly; as well as The incident angle of the plasma onto the substrate is controlled by adjusting the voltage.

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