Substrate Processing Apparatus and Method

Abstract

The present invention provides a substrate processing apparatus and method for performing a formulation that can improve the adsorption rate of metal ions to a substrate. The substrate processing method includes: a step of discharging a substrate processing liquid onto the substrate; a step of rotating the substrate at a first speed; and a step of drying the substrate when the discharge of the substrate processing liquid ends.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and method. More specifically, it relates to an apparatus and method for cleaning a substrate. Background Art

[0002] The semiconductor device manufacturing process can be continuously performed in semiconductor device manufacturing equipment and can be divided into a front process and a back process. Semiconductor manufacturing equipment can be installed in a space defined as a FAB (Fabrication Plant) to manufacture semiconductor devices.

[0003] The front process refers to the process of forming a circuit pattern on a wafer (Wafer) to complete a chip (Chip). The front process may include a deposition process (Deposition Process) of forming a thin film on the wafer, a photo lithography process (Photo Lithography Process) of transferring a photoresist (Photo Resist) to the thin film using a photo mask (Photo Mask), an etching process (Etching Process) of selectively removing unnecessary portions using a chemical substance or a reactive gas to form a desired circuit pattern on the wafer, an ashing process (Ashing Process) of removing the photoresist remaining after etching, an ion implantation process (Ion Implantation Process) of injecting ions into portions connected to the circuit pattern to give them electronic component characteristics, a cleaning process (Cleaning Process) of removing pollution sources on the wafer, etc.

[0004] The back process refers to the process of evaluating the performance of the product completed through the front process. The back process may include a primary inspection process of checking whether each chip on the wafer is operating to screen out good products and defective products, a packaging process (Package Process) of cutting and separating each chip through dicing, die bonding, wire bonding, molding, marking, etc. to give it the shape of a product, a final inspection process of finally inspecting the characteristics and reliability of the product through electrical characteristic inspection, burn-in inspection, etc. Summary of the Invention

[0005] Recently, during the process of conversion to micro processes, defects that were not visible between wafer processes in the past have emerged, so it is necessary to conduct a root cause analysis of the defects. For example, when it is necessary to confirm whether metal ions are detected on the surface of a wafer, the existing mass production recipe has the following problems: the chemical solution and the metal ions in the chemical solution stay on the wafer for a short time, resulting in a decrease in the adsorption rate of the metal ions to the wafer.

[0006] The technical problem to be solved by the present invention is to provide a substrate processing apparatus and method that execute a recipe capable of increasing the adsorption rate of metal ions to a substrate.

[0007] The technical problems of the present invention are not limited to the above-mentioned technical problems, and those skilled in the art can clearly understand other technical problems not mentioned through the following description.

[0008] One aspect of the substrate processing method of the present invention for solving the above technical problems includes: a step of discharging a substrate processing solution onto a substrate; a step of rotating the substrate at a first speed; and a step of drying the substrate when the discharge of the substrate processing solution ends.

[0009] The substrate processing method can be executed when inspecting the substrate processing solution and / or when inspecting a nozzle for discharging the substrate processing solution.

[0010] The substrate processing method may further include a step of rotating the substrate at a second speed, wherein the step of rotating at the second speed can be executed simultaneously with the step of drying, or can be executed before or after the step of drying.

[0011] The first speed may be a speed that prevents the substrate processing solution from bouncing off the substrate.

[0012] The first speed may be a first rotational speed slower than a first reference speed.

[0013] The first reference speed may be the rotational speed during normal processing of the substrate.

[0014] The first speed may be kept constant during the discharge of the substrate processing solution.

[0015] In the step of drying, the substrate can be naturally dried.

[0016] In the step of drying, the substrate may not be rotated when the substrate is dried.

[0017] The step of discharging the substrate processing liquid may be performed simultaneously with the step of rotating at the first speed, or may be performed before the step of rotating at the first speed.

[0018] The second speed may be equal to or lower than the first speed.

[0019] The first speed may be 200 RPM.

[0020] The first speed may vary according to the viscosity of the substrate processing liquid.

[0021] The substrate processing method may further include: when the substrate becomes dry, determining whether metal ions are detected on the substrate; and based on the determination result related to the metal ions, inspecting whether the substrate processing liquid and / or the nozzle for discharging the substrate processing liquid is defective.

[0022] In the step of inspecting the substrate processing liquid and / or the nozzle, when the metal ions are detected on the substrate, it may be determined that the substrate processing liquid has deteriorated or the nozzle is defective.

[0023] In addition, another aspect of the substrate processing method of the present invention for solving the above technical problems includes: a step of discharging a substrate processing liquid onto a substrate; a step of rotating the substrate at a first speed; a step of drying the substrate when the discharge of the substrate processing liquid ends; and a step of rotating the substrate at a second speed, wherein the first speed and the second speed are speeds for preventing the substrate processing liquid from bouncing off the substrate.

[0024] In addition, one aspect of the substrate processing apparatus of the present invention for solving the above technical problems includes: a substrate support module for supporting a substrate; and a spraying module for discharging a substrate processing liquid onto the substrate, wherein the substrate support module rotates the substrate at a first speed when the spraying module discharges the substrate processing liquid onto the substrate, and the substrate is dried when the discharge of the substrate processing liquid ends.

[0025] The substrate support module may rotate the substrate at the first speed when inspecting the substrate processing liquid and / or inspecting the nozzle for discharging the substrate processing liquid.

[0026] The substrate support module may not rotate the substrate when the substrate is dried, or may rotate the substrate at a second speed.

[0027] The second speed may be lower than the first speed.

[0028] Specific matters of other embodiments are included in the detailed description and the drawings. Description of the Drawings

[0029] Figure 1 is a diagram schematically showing the internal configuration of a substrate processing system according to an embodiment of the present invention.

[0030] Figure 2 is a diagram schematically showing the internal structure of a substrate processing apparatus constituting a substrate processing system according to an embodiment of the present invention.

[0031] Figure 3 is a flowchart sequentially showing a substrate processing method of a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 4 is a first example diagram for explaining a substrate processing method according to an embodiment of the present invention.

[0033] Figure 5 is a second example diagram for explaining a substrate processing method according to an embodiment of the present invention.

[0034] Figure 6 is an example diagram for explaining the difference between an existing recipe and a recipe according to the present invention.

[0035] Figure 7 is a flowchart for sequentially explaining a substrate processing method after substrate drying.

[0036] Explanation of Reference Numerals

[0037] 100: Substrate processing system 110: Substrate processing apparatus

[0038] 120: Substrate processing liquid supply device 130: Control device

[0039] 210: Substrate support module 211: Rotating head

[0040] 212: Rotating shaft 213: Rotation driving unit

[0041] 214: Support pin 215: Guide pin

[0042] 220: Processing liquid recovery module 230: Lifting module

[0043] 240: Injection module 241: Nozzle

[0044] 242: Nozzle support portion 243: Second support shaft

[0045] 244: Second driving unit 410: Substrate processing liquid

[0046] 420: Liquid film 430: Metal ions Detailed Description of the Invention

[0047] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for realizing these advantages and features, will become clear by referring to the embodiments described in detail below together with the accompanying Figure 1 drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are only provided to make the disclosure of the present invention complete and to fully inform those of ordinary skill in the technical field to which the present invention pertains of the scope of the invention. The present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0048] An element or layer is referred to as being "on" or "above" another element or layer not only includes the case where it is directly above another element or layer, but also includes the case where other layers or other elements are interposed therebetween. Conversely, an element is referred to as being "directly" on another element or directly above another element means that no other element or layer is interposed therebetween.

[0049] To easily describe the relative relationship between one element or component shown in the figure and another element or component, spatial relative terms such as "below", "beneath", "lower", "above", "upper", etc. can be used. It should be understood that, in addition to the directions shown in the figure, spatial relative terms are also terms that include different directions of the elements with respect to each other when in use or operation. For example, when the element shown in the figure is flipped, an element described as being "below" or "beneath" another element can be located "above" another element. Therefore, the exemplary term "below" can include both the below and above directions. The element can also be oriented in another direction, so the spatial relative terms can be interpreted according to the orientation.

[0050] Although terms such as "first", "second", etc. are used to describe various elements, components, and / or parts, these elements, components, and / or parts are clearly not limited by these terms. These terms are only used to distinguish one element, component, and / or part from another element, component, and / or part. Therefore, the first element, the first component, or the first part mentioned below can clearly also be the second element, the second component, or the second part within the technical concept of the present invention.

[0051] The terms used in this specification are for the purpose of describing embodiments and are not intended to limit the present invention. In this specification, unless otherwise specifically mentioned in the sentence, the singular form also includes the plural form. The terms "comprises" and / or "comprising" used in the specification do not exclude the presence or addition of one or more other elements, steps, operations, and / or components in addition to the recited elements, steps, operations, and / or components.

[0052] If there are no other definitions, all terms (including technical and scientific terms) used in this specification can be used with the meanings commonly understood by those of ordinary skill in the art to which the present invention pertains. In addition, terms defined in a commonly used dictionary are not ideally or overly interpreted unless specifically defined otherwise.

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the accompanying drawings, regardless of the reference numerals, the same or corresponding elements are given the same reference numerals, and repeated descriptions thereof are omitted.

[0054] The present invention relates to a substrate processing apparatus that executes a recipe capable of improving the adsorption rate of metal ions to a substrate (e.g., a wafer) and a substrate processing system having the same. In particular, the present invention relates to a substrate processing apparatus that executes a recipe capable of improving the adsorption rate of metal ions to a substrate when it is necessary to confirm whether metal ions are detected on the surface of the substrate and a substrate processing system having the same.

[0055] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and the like.

[0056] Figure 1 FIG. schematically shows the internal configuration of a substrate processing system according to an embodiment of the present invention.

[0057] According to Figure 1 , the substrate processing system 100 may include a substrate processing apparatus 110, a substrate processing liquid supply apparatus 120, and a controller 130.

[0058] The substrate processing apparatus 110 processes a substrate using a chemical solution. Such a substrate processing apparatus 110 may be implemented as a cleaning process chamber that performs a cleaning process on the substrate using a chemical solution.

[0059] The liquid chemical solution can be a substance in a liquid state (e.g., an organic solvent) or a substance in a gaseous state. The liquid chemical solution can have high volatility and can include substances that generate a lot of fumes or have high residue due to high viscosity. For example, the liquid chemical solution can be selected from substances including isopropyl alcohol (IPA) components, substances including sulfuric acid components (e.g., SPM including sulfuric acid components and hydrogen peroxide components), substances including ammonia components (e.g., SC-1 (H2O2 + NH4OH)), substances including hydrofluoric acid components (e.g., DHF (Diluted Hydrogen Fluoride)), substances including phosphoric acid components, etc. Hereinafter, these liquid chemical solutions used for processing the substrate are defined as substrate processing liquids.

[0060] On the other hand, when the substrate processing apparatus 110 is implemented as a cleaning process chamber, as Figure 2 shown, the substrate processing apparatus 110 can include a substrate support module 210, a processing liquid recovery module 220, a lifting module 230, and a spraying module 240.

[0061] Figure 2 is a diagram schematically showing the internal structure of a substrate processing apparatus constituting a substrate processing system according to an embodiment of the present invention. Hereinafter, reference is made to Figure 2 for description.

[0062] The substrate support module 210 supports the substrate W. When processing the substrate W, the substrate support module 210 can rotate the substrate W in a direction perpendicular to the third direction 30 (the first direction 10 and the second direction 20). The substrate support module 210 can be disposed inside the processing liquid recovery module 220 to recover the substrate processing liquid used when processing the substrate W.

[0063] The substrate support module 210 can include a spin head 211, a rotating shaft 212, a rotation driving unit 213, a support pin 214, and a guide pin 215.

[0064] The spin head 211 rotates along the rotation direction of the rotating shaft 212 (the direction perpendicular to the third direction 30). Such a spin head 211 can be set to have the same shape as the shape of the substrate W. However, this embodiment is not limited thereto. The spin head 211 can also be set to have a shape different from the shape of the substrate W.

[0065] The rotating shaft 212 generates a rotational force using the energy provided by the rotation driving unit 213. Such a rotating shaft 212 can be coupled to the rotation driving unit 213 and the rotating head 211 respectively, so as to transmit the rotational force generated by the rotation driving unit 213 to the rotating head 211. The rotating head 211 rotates along with the rotating shaft 212. In this case, the substrate W placed on the rotating head 211 can also rotate together with the rotating head 211.

[0066] The support pin 214 and the guide pin 215 fix the position of the substrate W on the rotating head 211. To this end, the support pin 214 supports the bottom surface of the substrate W on the rotating head 211, and the guide pin 215 supports the side surface of the substrate W. A plurality of support pins 214 and guide pins 215 can be provided on the rotating head 211 respectively.

[0067] The support pins 214 can be arranged to have an overall annular shape. Thus, the support pins 214 can support the bottom surface of the substrate W in such a way that the substrate W can be spaced apart from the upper part of the rotating head 211 by a certain distance.

[0068] The guide pin 215 is a chucking pin, which can support the substrate W to prevent the substrate W from deviating from its original position when the rotating head 211 rotates.

[0069] On the other hand, a back nozzle (not shown) can also be provided on the upper part of the rotating head 211. The back nozzle is used to clean the bottom surface of the substrate W. Such a back nozzle can be provided at the center of the upper part of the rotating head 211, and can eject the substrate processing liquid onto the bottom surface of the substrate W.

[0070] The processing liquid recovery module 220 recovers the substrate processing liquid used for processing the substrate W. The processing liquid recovery module 220 can be arranged to surround the substrate support module 210, thereby providing a space for performing the processing process on the substrate W.

[0071] After the substrate W is placed and fixed on the substrate support module 210 and starts to rotate by the substrate support module 210, the ejection module 240 can eject the substrate processing liquid onto the substrate W according to the control of the control device 130. Then, due to the centrifugal force generated by the rotational force of the substrate support module 210, the substrate processing liquid ejected onto the substrate W can be dispersed in the direction where the processing liquid recovery module 220 is located. In this case, the processing liquid recovery module 220 can recover the substrate processing liquid when the substrate processing liquid flows into its interior through the inflow ports (i.e., the first opening 224 of the first recovery barrel 221, the second opening 225 of the second recovery barrel 222, the third opening 226 of the third recovery barrel 223, etc.).

[0072] The processing liquid recovery module 220 may include a plurality of recovery barrels. For example, the processing liquid recovery module 220 may include three recovery barrels. When the processing liquid recovery module 220 includes a plurality of recovery barrels as described above, it can use the plurality of recovery barrels to separate and recover the substrate processing liquid used in the substrate processing process, whereby the substrate processing liquid can be reused.

[0073] When the processing liquid recovery module 220 includes three recovery barrels, it may include a first recovery barrel 221, a second recovery barrel 222, and a third recovery barrel 223. For example, the first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 may be implemented as bowls.

[0074] The first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 can recover different substrate processing liquids from each other. For example, the first recovery barrel 221 can recover water, the second recovery barrel 222 can recover a first chemical solution (e.g., any one of a substance including an IPA component and a substance including an SPM component), and the third recovery barrel 223 can recover a second chemical solution (e.g., the other of a substance including an IPA component and a substance including an SPM component).

[0075] The first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 may be connected to recovery lines 227, 228, 229 extending downward (in the third direction 30) from their bottom surfaces. The first processing liquid, the second processing liquid, and the third processing liquid recovered by the first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 can be processed by a processing liquid regeneration system (not shown) into a reusable form.

[0076] The first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 may be arranged in an annular shape around the substrate support module 210. The sizes of the first recovery barrel 221, the second recovery barrel 222, and the third recovery barrel 223 may gradually increase from the first recovery barrel 221 toward the third recovery barrel 223 (i.e., in the second direction 20). If the interval between the first recovery barrel 221 and the second recovery barrel 222 is defined as a first interval and the interval between the second recovery barrel 222 and the third recovery barrel 223 is defined as a second interval, the first interval may be equal to the second interval. However, this embodiment is not limited thereto. The first interval may also be different from the second interval. That is, the first interval may be greater than the second interval or less than the second interval.

[0077] The lifting module 230 linearly moves the processing liquid recovery module 220 in the up and down direction (third direction 30). Thereby, the lifting module 230 can function to adjust the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0078] The lifting module 230 may include a bracket 231, a first support shaft 232, and a first driving unit 233.

[0079] The bracket 231 is fixed to the outer wall of the processing liquid recovery module 220. The bracket 231 may be coupled with the first support shaft 232, and the first support shaft 232 moves in the vertical direction by the first driving unit 233.

[0080] When the substrate W is placed on the substrate support module 210, the substrate support module 210 may be located above the processing liquid recovery module 220. Similarly, when the substrate W is removed from the substrate support module 210, the substrate support module 210 may also be located above the processing liquid recovery module 220. In the above-described cases, the lifting module 230 may function to lower the processing liquid recovery module 220.

[0081] When performing a processing process on the substrate W, according to the type of the substrate processing liquid discharged onto the substrate W, the corresponding processing liquid may be recovered into any one of the first recovery bucket 221, the second recovery bucket 222, and the third recovery bucket 223. In this case, the lifting module 230 may also function to lift and lower the processing liquid recovery module 220 to a corresponding position. For example, when using the first processing liquid as the substrate processing liquid, the lifting module 230 may lift and lower the processing liquid recovery module 220 such that the substrate W is located at a height corresponding to the first opening 224 of the first recovery bucket 221.

[0082] On the other hand, in the present embodiment, the lifting module 230 may also linearly move the substrate support module 210 in the vertical direction, thereby adjusting the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0083] However, the present embodiment is not limited thereto. The lifting module 230 may also linearly move the substrate support module 210 and the processing liquid recovery module 220 simultaneously in the vertical direction, thereby adjusting the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0084] The spraying module 240 supplies a processing liquid onto the substrate W when processing the substrate W. At least one such spraying module 240 may be provided in the substrate processing apparatus 110. When a plurality of spraying modules 240 are provided in the substrate processing apparatus 110, each spraying module 240 may spray different substrate processing liquids onto the substrate W.

[0085] The spraying module 240 may include a nozzle 241, a nozzle support portion 242, a second support shaft 243, and a second driving unit 244.

[0086] The nozzle 241 is provided at the end of the nozzle support portion 242. Such a nozzle 241 can be moved to the process position or the waiting position by the second drive portion 244.

[0087] In the above, the process position refers to the area above the substrate W, and the waiting position refers to other areas except the process position. The nozzle 241 can be moved to the process position when discharging the substrate treatment liquid onto the substrate W, and can leave the process position and move to the waiting position after discharging the substrate treatment liquid onto the substrate W.

[0088] The nozzle support portion 242 supports the nozzle 241. Such a nozzle support portion 242 can be formed to extend in a direction corresponding to the longitudinal direction of the rotating head 211. That is, the longitudinal direction of the nozzle support portion 242 can be along the second direction 20.

[0089] The nozzle support portion 242 can be coupled to the second support shaft 243, and the second support shaft 243 is formed to extend in a direction perpendicular to the longitudinal direction of the nozzle support portion 242. The second support shaft 243 can be formed to extend in a direction corresponding to the height direction of the rotating head 211. That is, the longitudinal direction of the second support shaft 243 can be along the third direction 30.

[0090] The second drive portion 244 rotates and lifts the second support shaft 243 and the nozzle support portion 242 interlocked with the second support shaft 243. Due to this function of the second drive portion 244, the nozzle 241 can be moved to the process position or the waiting position.

[0091] Refer again to Figure 1 for description.

[0092] The substrate treatment liquid supply device 120 supplies the substrate treatment liquid to the substrate treatment device 110. For this purpose, the substrate treatment liquid supply device 120 can be connected to the injection module 240 of the substrate treatment device 110, and can operate according to the control of the control device 130.

[0093] The control device 130 controls the operation of the substrate treatment device 110. Specifically, the control device 130 can control the operation of the rotation drive portion 213 of the substrate support module 210, the first drive portion 233 of the lifting module 230, and the second drive portion 244 of the injection module 240.

[0094] The control device 130 can be implemented as a computer or a server including a processor (such as a microprocessor) having arithmetic functions, control functions, etc., a memory having storage functions, etc., a power supply having power supply functions, etc. In this embodiment, the control device 130 can also be a processor.

[0095] On the other hand, the control device 130 can also control the operation of the substrate processing liquid supply device 120 to supply the substrate processing liquid from the substrate processing liquid supply device 120 to the substrate processing device 110 when needed.

[0096] Next, a formulation that can improve the adsorption rate of metal ions to the substrate will be described.

[0097] Figure 3 is a flowchart sequentially showing the substrate processing method of the substrate processing device according to an embodiment of the present invention. Hereinafter, reference will be made to Figure 3 for description.

[0098] If the substrate processing liquid deteriorates or defects occur in the nozzles for discharging the substrate processing liquid, etc., metal ions (Metal Ion) included in the substrate processing liquid may be detected on the substrate W when the substrate W is cleaned.

[0099] However, in the case of cleaning the substrate W according to the existing formulation, since the substrate processing liquid stays on the substrate W for a short time, there is a problem that the adsorption rate of metal ions to the substrate W is low. Therefore, there is a problem that even if the substrate processing liquid deteriorates or defects occur in the nozzles, etc., it cannot be accurately detected in the inspection process.

[0100] The formulation according to this embodiment is characterized in that it can improve the adsorption rate of metal ions to the substrate W to solve this problem.

[0101] First, when the substrate W is placed and fixed on the substrate support module 210, as Figure 4 shown, the injection module 240 can discharge the substrate processing liquid onto the substrate W (S310), and the substrate support module 210 can rotate at a first rotation speed and rotate the substrate W (S320).

[0102] In the above, discharging the substrate processing liquid by the injection module 240 (S310) and rotating the substrate support module 210 (S320) can be performed simultaneously. However, this embodiment is not limited thereto. In this embodiment, discharging the substrate processing liquid by the injection module 240 (S310) can also be performed before the substrate support module 210 rotates (S320). Figure 4 is a first example diagram for explaining the substrate processing method according to an embodiment of the present invention.

[0103] As described above, when the injection module 240 discharges the substrate processing liquid 410 onto the substrate W, the substrate support module 210 can rotate at a first rotation speed to rotate the substrate W. In this case, the substrate support module 210 can use a low speed (or low RPM) slower than the first reference speed as the first rotation speed.

[0104] When the ejection module 240 ejects the substrate processing liquid 410 onto the substrate W, in the case where the substrate support module 210 rotates at a first rotation speed slower than the first reference speed, due to the low-speed rotation of the substrate support module 210, the substrate processing liquid 410 is not easily ejected from the substrate W, and thus the time for the substrate processing liquid 410 to stay on the substrate W can be prolonged.

[0105] If the substrate processing liquid 410 deteriorates, the substrate processing liquid 410 may include metal ions (e.g., chromium (Cr)). Therefore, when the time for the substrate processing liquid 410 to stay on the substrate W becomes longer, the possibility of the metal ions in the substrate processing liquid 410 being adsorbed on the substrate W can increase.

[0106] On the other hand, in the above, the first reference speed refers to the general speed of the substrate support module 210 when processing the substrate W. For example, the first reference speed can be 500 RPM to 800 RPM.

[0107] On the other hand, as described above, the first rotation speed of the substrate support module 210 can be slower than the first reference speed. In the present embodiment, the first rotation speed of the substrate support module 210 only needs to be a speed at which the substrate processing liquid 410 does not bounce out from the substrate W to the outside when the ejection module 240 ejects the substrate processing liquid (S310) and the substrate support module 210 rotates (S320) at the same time. For example, the first rotation speed can be 100 RPM to 300 RPM.

[0108] The first rotation speed of the substrate support module 210 can vary according to the type of the substrate processing liquid 410. For example, when the viscosity of the substrate processing liquid 410 is higher than the reference value, the first rotation speed of the substrate support module 210 can be faster (e.g., 200 RPM to 300 RPM) than a predetermined speed (e.g., 200 RPM) in consideration of the reference value, and when the viscosity of the substrate processing liquid 410 is lower than the reference value, the first rotation speed of the substrate support module 210 can be slower (e.g., 100 RPM to 200 RPM) than the predetermined speed (i.e., 200 RPM).

[0109] On the other hand, the first rotation speed of the substrate support module 210 can maintain a constant value during the ejection of the substrate processing liquid 410 onto the substrate W. However, the present embodiment is not limited thereto. The first rotation speed of the substrate support module 210 can also be changed within a certain range (i.e., a speed range at which the substrate processing liquid 410 does not bounce out from the substrate W to the outside).

[0110] The ejection module 240 can eject the substrate processing liquid 410 onto the substrate W during a specified time period. For example, the ejection module 240 can eject the substrate processing liquid 410 onto the substrate W during 30 seconds.

[0111] When the ejection module 240 finishes discharging the substrate treatment liquid (S310), a process of drying the substrate W can be performed. In this case, as Figure 5 shown, the substrate processing apparatus 110 can naturally dry the substrate W (S330), and the substrate support module 210 can rotate at a second rotation speed and rotate the substrate W (S340).

[0112] Drying the substrate W (S330) and rotating the substrate support module 210 (S340) can continue until the substrate W is completely dry. For example, it can be visually confirmed whether the substrate W is completely dry.

[0113] In the above, when the ejection module 240 finishes discharging the substrate treatment liquid (S310), drying the substrate W (S330) and rotating the substrate support module 210 (S340) can be performed simultaneously. However, this embodiment is not limited thereto. In this embodiment, drying the substrate W (S330) can be performed before rotating the substrate support module 210 (S340), or drying the substrate W (S330) can be performed after rotating the substrate support module 210 (S340). Figure 5 It is a second exemplary diagram for explaining a substrate processing method according to an embodiment of the present invention.

[0114] On the other hand, in this embodiment, when drying the substrate W, the substrate support module 210 may not rotate either. That is, step S340 can also be omitted and only step S330 can be performed until the substrate W is completely dry.

[0115] As described above, when drying the substrate W, the substrate support module 210 can rotate at a second rotation speed to rotate the substrate W. In this case, the substrate support module 210 can use a low speed (or low RPM) slower than the second reference speed similar to the first rotation speed as the second rotation speed.

[0116] When drying the substrate W, in the case where the substrate support module 210 does not rotate or rotates at a second rotation speed slower than the second reference speed, since the substrate support module 210 does not rotate or rotates at a low speed, the possibility of the substrate treatment liquid 410 bouncing outward can be minimized compared to the case where the substrate support module 210 rotates at the second reference speed. Thus, the thickness of the liquid film on the substrate W can be made thicker, and the time for the substrate treatment liquid 410 to stay on the substrate W can be increased, thereby also improving the adsorption rate of metal ions.

[0117] In addition, since only the pure liquid medicine evaporates as the substrate treatment liquid dries on the substrate W along with the low-speed rotation of the substrate support module 210, the possibility that metal ions present in the liquid medicine remain on the surface of the substrate W and are detected can be increased.

[0118] Figure 6 In [the figure], the left side shows the thickness of the liquid film 420 and the adsorption rate of metal ions (such as Cr) 430 when the substrate support module 210 rotates at the second reference speed, and the right side shows the thickness of the liquid film 420 and the adsorption rate of metal ions 430 when the substrate support module 210 rotates at a second rotational speed slower than the second reference speed. Figure 6 It is an example diagram for explaining the difference between the existing formulation and the formulation according to the present invention.

[0119] On the other hand, in the above, the second reference speed refers to the general speed of the substrate support module 210 when drying the substrate W. For example, the reference speed can be 1200 RPM to 1500 RPM.

[0120] On the other hand, as described above, the second rotational speed of the substrate support module 210 can be slower than the second reference speed. In this embodiment, the second rotational speed of the substrate support module 210 only needs to be a speed at which the substrate processing liquid 410 does not bounce out from the substrate W to the outside when simultaneously drying the substrate W (S330) and rotating the substrate support module 210 (S340). For example, the second rotational speed can be 100 RPM to 300 RPM.

[0121] The second rotational speed of the substrate support module 210 can vary according to the type of the substrate processing liquid. For example, when the viscosity of the substrate processing liquid is higher than the reference value, the second rotational speed of the substrate support module 210 can be faster (e.g., 200 RPM to 300 RPM) than a predetermined speed (e.g., 200 RPM) considering the reference value, and when the viscosity of the substrate processing liquid is lower than the reference value, the second rotational speed of the substrate support module 210 can be slower (e.g., 100 RPM to 200 RPM) than the predetermined speed (i.e., 200 RPM).

[0122] On the other hand, the second rotational speed of the substrate support module 210 can maintain a constant value during the natural drying of the substrate W. However, this embodiment is not limited thereto. The second rotational speed of the substrate support module 210 can also be changed within a certain range (i.e., a speed range at which the substrate processing liquid 410 does not bounce out from the substrate W to the outside).

[0123] On the other hand, in this embodiment, before drying the substrate W, pure water (DIW; De-Ionized Water) or the like can also be provided on the substrate W to further clean the substrate W.

[0124] Above, with reference to Figures 3 to 6Describes a substrate processing method of a substrate processing apparatus 110 according to an embodiment of the present invention. According to the substrate processing method of the substrate processing apparatus 110, when supplying a substrate processing liquid onto a substrate W, the substrate support module 210 may rotate at a first rotation speed to rotate the substrate W. In addition, when drying the substrate W, the substrate support module 210 may rotate at a second rotation speed to rotate the substrate W.

[0125] In the case of supplying the substrate processing liquid onto the substrate W and in the case of drying the substrate W, the substrate support module 210 may rotate at the same rotation speed. That is, in the present embodiment, the first rotation speed and the second rotation speed may have the same value.

[0126] However, the present embodiment is not limited thereto. In the case of supplying the substrate processing liquid onto the substrate W and in the case of drying the substrate W, the substrate support module 210 may also rotate at different rotation speeds.

[0127] On the other hand, when drying the substrate W, in order to prevent metal ions from detaching from the substrate W, the rotation speed of the substrate support module 210 when drying the substrate W may be slower than the rotation speed of the substrate support module 210 when supplying the substrate processing liquid onto the substrate W. That is, in the present embodiment, the second rotation speed may not only be slower than the second reference speed but also be slower than the first rotation speed (second rotation speed < first rotation speed < second reference speed).

[0128] On the other hand, when drying the substrate W, if the substrate support module 210 rotates at the same rotation speed as in the case of supplying the substrate processing liquid onto the substrate W, it may take a long time to completely dry the substrate W. Therefore, in the present embodiment, taking this into account, the rotation speed of the substrate support module 210 when drying the substrate W may also be faster than the rotation speed of the substrate support module 210 when supplying the substrate processing liquid onto the substrate W. That is, in the present embodiment, the second rotation speed may be slower than the second reference speed but faster than the first rotation speed (first rotation speed < second rotation speed < second reference speed).

[0129] Next, an inspection process of the substrate W will be described. It may be possible to perform the inspection process of the substrate W described below after passing through Figure 3 steps S310 to S340 so that the substrate W is completely dried.

[0130] Figure 7 is a flowchart for sequentially explaining the substrate processing method after substrate drying. Hereinafter, reference will be made to Figure 7 for description. Figure 7 The method may be performed by an additionally provided substrate inspection apparatus (not shown).

[0131] When the substrate W is completely dry, the substrate W is moved to a place where a substrate inspection device is provided. When the substrate W reaches the destination, the substrate inspection device determines whether metal ions are detected on the substrate W (S510).

[0132] If metal ions are not detected on the substrate W, the substrate inspection device determines that the substrate processing liquid has not deteriorated and there are no problems with the nozzles for discharging the substrate processing liquid, etc. (S520).

[0133] On the contrary, if metal ions are detected on the substrate W, the substrate inspection device determines that the substrate processing liquid has deteriorated or there are defects in the nozzles, etc. (S530).

[0134] After that, the substrate inspection device reports to the manager terminal that there are problems with the substrate processing liquid or nozzles, etc. (S540).

[0135] As described above, with reference to Figures 1 to 7 The substrate processing system 100 and the substrate processing method according to an embodiment of the present invention have been described. The present invention relates to a natural drying formulation for detecting metal ions. Existing formulations have the problem that metal ions cannot be detected on the substrate, while the formulation of the present invention is a formulation improved for detecting metal ions, and compared with existing formulations, it can further increase the possibility of detecting metal ions on the substrate.

[0136] The execution order (liquid medicine standard) of the formulation according to the present invention is sorted out as follows.

[0137] ① Rotate at 200 rpm + supply the liquid medicine for 30 s

[0138] ② Rotate and dry at 200 rpm for 360 s (SC-1 standard, until the liquid medicine is completely dry)

[0139] ③ Process completed at 0 rpm

[0140] The following effects can be obtained through the above execution order according to the formulation of the present invention.

[0141] First, by discharging the liquid medicine onto the surface of the substrate W at a low RPM, the residence time of the liquid medicine can be increased, and thus the surface adsorption rate of metal ions in the liquid medicine can also be increased.

[0142] Second, by drying at a low RPM, the residence time of the liquid medicine on the surface of the substrate W can be increased to improve the surface adsorption rate of metal ions, and metal ions can also be analyzed and grasped for the liquid medicine.

[0143] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those of ordinary skill in the art to which the present invention pertains should understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

Claims

1. A substrate processing method, comprising: A step of discharging a substrate processing liquid onto a substrate; A step of rotating the substrate at a first speed during the discharging of the substrate processing liquid; A step of drying the substrate when the discharging of the substrate processing liquid ends; And A step of rotating the substrate at a second speed during the drying of the substrate, wherein the second speed is lower than the first speed, and the first speed is a speed that prevents the substrate processing liquid from bouncing off the substrate; wherein the substrate processing method is executed when inspecting the substrate processing liquid and / or inspecting a nozzle for discharging the substrate processing liquid.

2. The substrate processing method according to claim 1, wherein the first speed is a first rotational speed slower than a first reference speed.

3. The substrate processing method according to claim 2, wherein the first reference speed is a rotational speed during normal processing of the substrate.

4. The substrate processing method according to claim 1, wherein the first speed remains constant during the discharging of the substrate processing liquid.

5. The substrate processing method according to claim 1, wherein in the step of drying, the substrate is naturally dried.

6. The substrate processing method according to claim 1, wherein the first speed is 200 RPM.

7. The substrate processing method according to claim 1, wherein the first speed varies according to the viscosity of the substrate processing liquid.

8. The substrate processing method according to claim 1, further comprising: A step of determining whether metal ions are detected on the substrate when the substrate becomes dry; And A step of inspecting whether the substrate processing liquid and / or the nozzle for discharging the substrate processing liquid is defective based on a determination result related to the metal ions.

9. The substrate processing method according to claim 8, wherein in the step of inspecting the substrate processing liquid and / or the nozzle, when the metal ions are detected on the substrate, it is determined that the substrate processing liquid has deteriorated or the nozzle has a defect.

10. A substrate processing apparatus, comprising: A substrate support module for supporting a substrate; And A spraying module for discharging a substrate processing liquid onto the substrate, wherein the substrate support module rotates the substrate at a first speed when the spraying module discharges the substrate processing liquid onto the substrate, and the substrate is dried when the discharging of the substrate processing liquid ends; wherein the substrate support module rotates the substrate at a second speed when the substrate is dried; wherein the second speed is lower than the first speed, and the first speed is a speed that prevents the substrate processing liquid from bouncing off the substrate; wherein the substrate support module rotates the substrate at the first speed when inspecting the substrate processing liquid and / or inspecting a nozzle for discharging the substrate processing liquid.

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