Base for CVD reactor

Abstract

The invention relates to a CVD reactor, which has a susceptor (2) which can be driven to rotate around a rotation axis (A) by a rotation drive device (24), the susceptor having a first wide side (2') facing a process chamber (4), a plurality of placement positions (22) for accommodating substrates (21) to be processed being arranged on the first wide side around the rotation axis (A), the susceptor also having a second wide side (2") pointing away from the first wide side, the second wide side being opposite to a heating device (8) for heating the susceptor (2) to a processing temperature, the susceptor also having a plurality of gas outlets (10, 15, 18) leading into a gap between the heating device (8) and the second wide side (2") of the susceptor (2) for supplying a temperature-controlled gas into the gap. In order to be able to locally influence the heat transfer between the heating device (8) and the susceptor (2), it is provided that the gas outlet openings (10, 15, 18) are arranged in the second wide side (2") of the susceptor (2) and each placement position (22) is spatially assigned at least one of the plurality of gas outlet openings (10, 15, 18).

Description

Field of the Invention

[0001] The present invention relates to a susceptor for a CVD (Chemical Vapor Deposition) reactor, the susceptor having two wide sides facing away from each other. The first wide side of the two wide sides has a plurality of placement positions for accommodating one or more substrates respectively. These placement positions are arranged in a circle around the rotation axis of the susceptor.

[0002] The present invention further relates to a CVD reactor for heat-treating a substrate, the CVD reactor having such a susceptor, wherein the first wide side of the susceptor faces the processing chamber, and the processing gas is introduced into the processing chamber. The second wide side faces the heating device, and the susceptor is heated to the processing temperature by the heating device. The heating device is opposed to the second wide side. There is a spacer space between the second wide side and the heating device. The gas discharge ports open into the spacer space, and the gas is introduced into the spacer space through these gas discharge ports.

[0003] The present invention further relates to a method for heat-treating a substrate in such a CVD reactor, wherein the gas is introduced into the spacer space between the heating device and the second wide side of the susceptor. Background Art

[0004] A CVD reactor having a susceptor is described in the document DE 10 2019 104 433 A1. A substrate holder for holding one or more substrates is located on the susceptor. The substrate holder is located in recesses respectively forming the placement positions and is driven to rotate. There is a sealing plate between the heating device and the second wide side of the susceptor, and the space inside the housing of the CVD reactor where the heating device is located is isolated from the processing gas introduced into the processing chamber through the sealing plate. The temperature-regulating gas is introduced into the spacer space between the heating device and the second wide side of the susceptor. The heat supply to the susceptor or the heat dissipation from the susceptor can be changed in a locally restricted heat-affected zone by the temperature-regulating gas flow. The introduction of the temperature-regulating gas is achieved through position-fixed gas discharge ports. The gas discharge ports are arranged on the sealing plate. The heat flow from the heating device to the substrate can be independently changed by periodically pulsatingly introducing the temperature-regulating gas.

[0005] The document US 6,569,250 B2 describes a pedestal with a gas outlet. The prior art also includes the documents DE 10 2005 056 536 A1, DE 10 2009 043 960 A1, DE 10 2011 053 498 A1, DE 10 2013109 155 A1, DE 10 2014 104 218 A1, DE 10 2017 105 333 A1, US 2018 / 0182635 A1, US5,468,299 A, DE 10 2011 055 061 A1.

[0006] The document DE 10 2009 044 276 A1 describes a discharge line that leads into the spacer between the pedestal and the heating device, through which gas can be discharged from a groove arranged below the substrate support.

[0007] The document DE 10 2018 130 138 A1 describes a CVD reactor with a pedestal, wherein the pedestal has a gas outlet in its outer peripheral edge.

[0008] The document DE 10 2018 132 673 A1 describes a CVD reactor, wherein the gas outlet leads into the wide side of the pedestal facing the processing chamber. Summary of the Invention

[0009] The technical problem to be solved by the present invention is to provide an alternative method or an alternative device, by which the pedestal temperature can be locally influenced so that the surface temperature of the substrate arranged on the placement position can be adjusted individually.

[0010] As described in the aforementioned document DE 10 2019 104 433, in a variant of the present invention, a gas with variable thermal conductivity, in particular a temperature-regulating gas, is introduced into the space between the placement position and the heating device. The thermal conductivity can be changed by varying the mixing ratio of two purge gases that form the temperature-regulating gas, where one purge gas has a high thermal conductivity and the other purge gas has a low thermal conductivity. The input is made from the base, i.e., through a gas discharge port that rotates with the base and has a fixed spatial position relative to the placement position, and the substrate can be supported on the placement position. According to the present invention, at least one gas discharge port is assigned to each placement position. Each gas discharge port that rotates with the base is connected to an input line having a supply port. It can be provided that one or more gas discharge ports assigned to the same placement position are assigned to a common supply port. However, it can also be provided that each supply port is only connected to one gas discharge port. Preferably, the device according to the present invention has a gas mixing device that provides the temperature-regulating gas. The gas mixing device can have a plurality of mass flow controllers, where preferably each mass flow controller is only fluidly connected to one supply port, so that each of the plurality of discharge ports assigned to the same placement position can be assigned an independent gas flow, in particular an independent gas mixture. Thereby, an independent temperature-regulating gas environment can be adjusted between each placement position for the substrate and the heating device. Thereby, the heat supply to the substrate or the heat dissipation from the substrate can be locally changed. The heat-affected zone arranged below the placement position is fixed relative to the base. The base rotates in the reactor housing, and relative to this reactor housing, the heat-affected zone is offset around the rotation axis of the base. In the method according to the present invention, at least one of the plurality of gas discharge ports arranged in the second wide side of the base is assigned to each placement position. This assignment is a spatial assignment. In addition, this assignment is also functional because the temperature-regulating gas flowing out of the gas discharge port flows into the heat-affected zone arranged between the placement position and the heating device. An independent temperature-regulating gas environment can be set independently in each heat-affected zone by changing the mass flow of the temperature-regulating gas mixed with the ambient gas or by changing the composition of the temperature-regulating gas composed of multiple components, where different components can have different thermal conductivities, for example, it can be composed of hydrogen and nitrogen. The processing chamber is bounded downward by the upper first wide side of the base and upward by a top plate. The top plate can be actively or passively cooled. An intake mechanism is provided through which the processing gas is supplied into the processing chamber. The intake mechanism can extend in the region of the rotation axis. The central intake mechanism has a plurality of gas discharge ports arranged in the outer peripheral surface through which the processing gas can flow into the processing chamber. The processing gas is provided in a gas mixing system and can contain various different reaction gases that react with each other inside the processing chamber, preferably on the surface of the substrate, so as to deposit a layer on the substrate. The processing gas can contain hydrides of Group III and organometallic compounds of Group V.However, the process gas may also contain elements of Group IV or elements of Group II and Group VI. A semiconductor single crystal layer is preferably deposited on the substrate. The process gas flows radially through the processing chamber and is discharged through an exhaust mechanism that annularly surrounds a preferably disk-shaped pedestal. The exhaust mechanism may have openings or the like so as to also discharge the temperature control gas. The placement position may be constituted by a recess provided in the first wide side of the pedestal. A discharge port is provided at the bottom of the recess, and the purge gas enters the recess through the discharge port. The purge gas forms an air cushion that supports the substrate holder, and the substrate to be coated is supported on the substrate holder. The substrate holder is also rotated by the purge gas flow. According to a preferred embodiment, each placement position is provided with at least one gas discharge port, wherein the gas discharge port is arranged between the center of the pedestal and the placement position. The temperature control gas flowing out of the gas discharge port flows radially outward below the placement position. The opening width of the gas discharge port may be equal to the diameter of the input pipeline, for example, it may be circular. However, the discharge port may also be longitudinally extended. The discharge port may extend linearly or curvedly. Preferably, the gas discharge port extends over a sector area, and the placement position also extends over this sector area. A plurality of gas discharge ports may be provided, and these gas discharge ports are arranged successively in the radial direction, that is, at different radial distances from each other relative to the center. The second gas discharge port may be arranged vertically below the placement position, for example. Another gas discharge port may be arranged radially outside the placement position. If a plurality of gas discharge ports are provided for each placement position, these gas discharge ports are arranged identically at each placement position. Even if only one gas discharge port is provided, all these gas discharge ports preferably have the same radial distance relative to the center. The temperature control gas is preferably supplied to the gas discharge port through the pedestal and preferably additionally through the rod supporting the pedestal. For this purpose, the input pipeline constituted by holes extends radially inside the pedestal, for example. Each gas discharge port is preferably provided with an input pipeline. The input pipeline may have an outwardly directed supply port in the region of the rod. During the rotation of the pedestal, the supply port rotates around the rotation axis. By means of a suitable annular gas distribution chamber surrounding the rod, the temperature control gas can be supplied to each supply port during rotation. The supply ports assigned to different gas discharge ports preferably overlap axially above and below the rotation axis. In the method according to the invention, an optical or other temperature measuring device may be provided, by which the surface temperature of each substrate or each placement position can be measured. The substrate temperature can be measured through the opening at the top of the processing chamber by a position-fixed, especially optical, temperature measuring device, such as a pyrometer. When the pedestal rotates, the substrate moves past the temperature measuring device, so that the temperatures of all substrates can be determined successively. By means of an adjustment device, the temperature control gas flow assigned to each substrate can be changed so that the substrates have substantially the same surface temperature. By supplying a second temperature control gas, the lateral temperature distribution on the substrate or the surface temperature of the pedestal downstream of the substrate can also be changed.In a variant of the CVD reactor according to the invention, energy is transferred from the heating device to the susceptor by means of an alternating electromagnetic field which induces eddy currents in the susceptor, and the eddy currents heat the susceptor. The heating device can be a cooled induction coil. The induction coil can be located below the susceptor and extend spirally in a plane. The coil can be composed of tubes through which a coolant flows. The heat is transferred from the susceptor to the thus-cooled coil partly by heat conduction effected by the gas in the spacer space between the susceptor and the heating device. Thus, by varying the composition of the temperature-regulating gas, the heat outflow from the susceptor to the heating device can be set or influenced locally and independently for each placement position.

[0011] It can also be provided that a purge gas flow is introduced into the gap between the lower broad side of the susceptor and the sealing plate. The introduction of the purge gas flow can be effected radially inside the placement position and in particular in the immediate vicinity of the central carrier of the susceptor. There, one or more purge gas inlet lines can open into the gap, so that a radial gas flow is formed between the susceptor and the sealing plate. The gas flow flowing out of the above-mentioned gas outlet can enter the purge gas flow. The purge gas flow and the gas flow flowing out of the gas outlet opening into the gap are mixed. It can be provided that the two gases have different thermal conductivities, so that the mixture of the two gas flows forms a temperature-regulating gas flow, the thermal conductivity of which can be adjusted by varying the mass flow rate of at least one of the two gases. In a variant of the invention, it is provided that the gas outlet opening into the lower broad side of the susceptor opens into a recess on the lower side of the susceptor. The recess can extend over the sector area occupied by the placement position. The recess is in particular open towards the outer peripheral edge of the susceptor. Thereby, a section of the gap is formed between the susceptor and the sealing plate, which section has a larger gap width in the area of the placement position. The recess can widen radially and have a radially extending wall. Description of the Drawings

[0012] The embodiments of the present invention will be described hereinafter with reference to the drawings. In the drawings:

[0013] Figure 1 A cross-sectional view of the CVD reactor of the first embodiment is schematically shown in a way that it is cut along the rotation axis A of the susceptor 2;

[0014] Figure 2 In Figure 1 a top view of the susceptor 2 is shown in a way that it is cut along the cutting line II-II in;

[0015] Figure 3 Similar to Figure 1 a cross-sectional view of the CVD reactor of the second embodiment is shown;

[0016] Figure 4 The sector area of the susceptor 2 is shown in a bottom view of the third embodiment; and

[0017] Figure 5 A screenshot showing a gas mixing system;

[0018] Figure 6 Showing the corresponding to the third embodiment Figure 3 View;

[0019] Figure 7 In the diagram corresponding to Figure 4 The third embodiment is shown;

[0020] Figure 8 Showing along Figure 7 The third embodiment in the viewing direction VIII in Detailed Description

[0021] Figure 1 And Figure 3 A CVD reactor having an outwardly airtight housing 1 is schematically shown in a cross-sectional view. In the housing 1 there is a base 2 which is composed of a particularly coated graphite plate and is carried by a rod portion 14 which is rotationally driven by a rotational drive device 24 about a rotational axis A. Below the base 2 there is a heating device 8 which can be an infrared heating device, a radio frequency heating device or the like. The heating device 8 provides heat capable of heating the base 2 to a processing temperature of 500 to 1500 °C. There is a disc-shaped sealing disc 9 between the heating device 8 and the lower side of the base 2 formed by the wide side 2", and the sealing disc can be made of ceramic material, quartz, metal or coated graphite. The sealing disc 9 has an opening in its center through which the rod portion 14 which is rotationally driven during the operation of the device projects. The sealing disc 9 is fixed in position relative to the housing 1 and the heating device 8 fixed to the housing. The base 2 thus rotates relative to the sealing disc 9. There is a gap 23 between the sealing disc 9 and the base 2. During the operation of the device, the gap 23 has gap walls moving in opposite directions, namely the downwardly directed wide side 2" of the substrate support and the upwardly directed wide side of the sealing plate 9. In this gap, the purge gas generally flows in a radially outward direction. For this purpose, a purge gas input line 28 communicates with the gap at a purge gas outlet 27. The gas input into the gap 23 through the outlet 10 in Figure 1 or through the outlets 10, 15, 18 in Figure 3 is transported outward by the purge gas. In addition, a shear force is applied so that, for example, the air flow input into the gap 23 through the gas outlet 10 is deflected in the direction of rotation of the base along its path in the radially outward direction.

[0022] The first wide side 2' of the susceptor 2 faces the processing chamber 4 and is opposite to the second wide side 2" of the susceptor 2 and has a recess 22 forming a placement position. The substrate holder 3 is located in the recess, and the substrate 21 is supported on the substrate holder. A purge gas can be supplied through a gas nozzle (not shown) arranged at the bottom of the recess 22. An air cushion is generated by the purge gas, and the substrate holder 3 driven to rotate by the air cushion is suspended on the air cushion.

[0023] The intake mechanism 6 is located at the center of the processing chamber 4, and the above-mentioned processing gas can be supplied into the processing chamber through the intake mechanism. The processing gas flows through the susceptor 2 and the substrate 21 and reaches the exhaust mechanism 7, which annularly surrounds the susceptor 2. The processing chamber 4 is bounded upward by a processing chamber top 5 that is actively or passively cooled or heated.

[0024] The outer edge of the sealing disk is supported on the radially inner edge of the exhaust mechanism 7. The sealing disk 9 thus seals the space of the housing of the CVD reactor relative to the processing gas.

[0025] A plurality of supply ports 13 are stacked on top of each other and are circumferentially offset and located in the rod portion 14. A temperature-control gas can be input into these supply ports. Each supply port 13 is connected to an input pipeline, and the input pipeline individually connects each supply port 13 to a gas discharge port 10, 15 or 18 leading into the gap 23. For this purpose, the rod portion has axially extending input pipelines 12, 17 and 20, and the susceptor has radially extending input pipelines 11, 16, 19 connected thereto.

[0026] Each input pipeline or supply port 13 can be in fluid connection with two mass flow controllers 25, 26. Through these two mass flow controllers 24, 26, a gas mixture composed of a strongly heat-conducting gas such as hydrogen and a weakly heat-conducting gas such as nitrogen can be provided respectively. However, it is also provided that the input pipeline or supply port 13 is only connected to a gas source or a mass flow controller that provides a purge gas having a different thermal conductivity from the gas existing inside the housing.

[0027] In Figure 1 and Figure 2 the illustrated embodiment, each placement position 12 is individually assigned a gas discharge port 10, and an independent temperature-control air flow or an independent temperature-control gas mixture can be input into the space below the susceptor 2 through the gas discharge port, and this space is located below the placement position 22. Thereby, the heat transfer between the heating device 8 and the susceptor 2 is affected. The gas discharge port 10 is offset in the radially inward direction relative to the placement position 22, so that the temperature-control air flow flowing out of the gas discharge port 10 flows along the radially outward direction along the placement position 22 below. In Figure 2In this case, the gas outlet 10 is arranged on the connecting line between the center of the placement position 22 or the substrate support 3 and the rotation axis A. However, the gas outlet 10 can also be arranged offset circumferentially relative to this connecting line and in particular offset in such a way that the above-mentioned shear force conveys the temperature-regulating gas downward during its flow towards the placement position 22.

[0028] In Figure 3 the illustrated embodiment, in addition to the first gas outlet 10, there is also a further gas outlet 15 arranged approximately in the middle of the placement position 22. There is also a further gas outlet 18 arranged radially outside the placement position 2 or at the radially outer edge of the placement position 22, and by means of this gas outlet, the temperature distribution can be further influenced by supplying a suitable gas mixture or a suitable gas flow. These further gas outlets 15, 18 can also be arranged on the connecting line between the center of the placement position 22 and the rotation axis A or arranged offset relative to this connecting line.

[0029] Figure 4 Exemplarily, a construction variant of the gas outlets 10, 15, 18 is shown. They are arranged as recesses in the lower side 2" of the base 2 that extend in a curved, straight or arcuate manner. These recesses extend in particular circumferentially around the rotation axis A. These recesses can have a length that extends approximately over the sector area occupied by the placement position 22.

[0030] In Figures 6 to 8 the illustrated third embodiment, the purge gas outlet 27 of the purge gas input line 28 opens into the gap 23 between the wide side 22' of the base 2 and the sealing plate 9. Purge gas can be introduced into the gap 23 through the purge gas input line 28, and this purge gas flows radially through the gap. The purge gas outlet 27 is arranged offset radially inwards relative to the placement position 22, such that the purge gas flowing out of the purge gas outlet 27 flows along below the placement position 22. A gas outlet 10 for introducing a further gas is arranged in the wide side 22' of the base 2 facing the sealing plate 9. A gas having a different thermal conductivity from the gas entering the gap 23 through the purge gas outlet 27 can flow out through the gas outlet 10. By changing the mass flow rate of at least one of these two gases, the thermal conductivity of the gas below the placement position 22 can be changed.

[0031] In Figures 6 to 8In the illustrated embodiment, below each placement position, a recess 29 is provided on the wide side 22' of the base 2 facing away from the placement position 22. The recess 29 has a bottom surface extending parallel to the wide side surface 22' of the base 2. The recess 29 opens towards the outer peripheral edge of the base 2 and has two walls extending substantially radially. The gas outlet 10 opens into the recess 29 radially inside the placement position 22. The gas flowing out from the gas outlet 10 enters the recess 29 and flows radially through the recess 29 until the opening of the recess, from where the gas flows into the exhaust mechanism 7. The two side walls 29' of the recess 29 extending substantially radially are located outside the outer periphery of the placement position 22. The bottom 29" of the recess 29 has a distance from the wide side surface 22' surrounding the recess 29, and this distance is significantly less than half of the material thickness of the base 2 and especially less than a quarter of the material thickness of the base 2. The air flow flowing out from the gas outlet 10 is retained in the peripheral region below the placement position 22 through the recess 29. The wall 29' of the recess has a gas guiding function.

[0032] The heating device 8 can be composed of one or more spirally extending tubes through which the coolant flows. A heat flow is generated between the hot second wide side 2" of the base 2 and the cooler heating device 8. The spirally extending tubes form a coil, and the coil generates an alternating electromagnetic field, which induces eddy currents in the conductive base 2, and the base 2 is heated through these eddy currents. A first input pipeline can be provided through which the air flow passes, and the air flow generates an air cushion on which the substrate support 3 floats. The input pipeline according to the present invention is a second input pipeline separate and different from the first input pipeline.

[0033] The gas outlets 10, 15, 18 opening into the second wide side 2" of the base 2 are directly connected to the radially extending input pipelines 11, 16, 19. The radially extending input pipelines are in turn directly connected to the input pipelines 12, 17, and 20 extending axially in the rod portion, so that the air flow supplied to the input pipelines 12, 17, 20 or the input pipelines 11, 16, 19 enters the space 23 between the heating device 8 and the lower wide side 2" of the base 2 only through the gas outlets 10, 15, or 18.

[0034] The purging gas for generating the air cushion can be input into the first input pipeline, while the temperature regulating gas can be input into the second input pipeline. The purging gas input into the first input pipeline can be provided by a first gas source. The temperature regulating gas that can be input into the second input pipeline can be provided by a second gas source different from the first gas source.

[0035] Accordingly, the present invention also relates to an apparatus in the form of a susceptor 2 for a CVD reactor, which susceptor can be rotationally driven about a rotational axis A and has a first wide side 2' and a second wide side 2" facing away from the first wide side 2'. A plurality of placement positions 22 for accommodating substrates 21 to be processed are arranged on the first wide side around the rotational axis A. Each placement position 22 is spatially assigned at least one gas discharge opening 10, 15, 18 leading into the second wide side 2". It is characterized in that a sealing plate 9 is provided which is spaced from the second wide side 2" of the susceptor 2 by a gap 23.

[0036] The foregoing embodiments are used to illustrate the invention generally included in the present application, which invention expands the prior art at least by the following combinations of features, also separately and independently, and wherein two, several or all of these combinations of features can also be combined with each other, namely:

[0037] An apparatus, characterized in that a plurality of gas discharge openings 10, 15, 18 are provided in the second wide side 2", and each placement position 22 is spatially assigned at least one of the plurality of gas discharge openings 10, 15, 18.

[0038] An apparatus, characterized in that a plurality of gas discharge openings 10, 15, 18 are arranged in the second wide side 2" of the susceptor 2 and each placement position 22 is spatially assigned at least one of the plurality of gas discharge openings 10, 15, 18.

[0039] A method, characterized in that each placement position 22 is assigned at least one of the plurality of gas discharge openings 10, 15, 18 arranged in the second wide side 2" of the susceptor 2 and through which an air flow passes.

[0040] An apparatus, characterized in that the spaced space is formed by a gap 23 between the sealing plate 9 and the second wide side 2" of the susceptor 2, and / or the sealing plate 9 is located between the susceptor 2 and the heating device 8.

[0041] A method, characterized in that the susceptor 2 is rotationally driven relative to the sealing plate 9, the sealing plate is located between the second wide side 2" of the susceptor 2 and the heating device 8 and is fixed in position relative to the housing 1, and gas is introduced into the spaced space formed by the gap between the sealing plate 9 and the second wide side 2" of the susceptor 2.

[0042] A device, characterized in that it is provided with an intake mechanism 6 arranged along the rotation axis A and an annular exhaust mechanism 7 arranged around a base 2 having a circular planar contour, and / or at least one gas outlet 10 is arranged between the rotation axis A and the assigned placement position 22, and / or each gas outlet 10, 15, 18 is in fluid connection with at least one input pipeline 11, 12, 16, 17, 19, 20 having a supply port 13, and an air flow of temperature-controlled gas that can be independently adjusted by a mass flow controller 25 can be input into the supply port.

[0043] A method, characterized in that an air flow containing a processing gas is input into a processing chamber 4 through an intake mechanism 6 arranged along the rotation axis A, the air flow passes through the processing chamber 4 in the radial direction and is discharged through an annular exhaust mechanism 7 arranged around a base 2 having a circular planar contour, and / or the gas is discharged through the exhaust mechanism 7, and / or the air flow of temperature-controlled gas flowing out from at least one gas outlet 10 arranged between the rotation axis A and the assigned placement position 2 is independently adjusted by a mass flow controller 25, and / or the gas passes through below the placement position 22.

[0044] A device, characterized in that at least one second gas outlet 15, 18 is arranged between a first gas outlet 10 located between the rotation axis A and the placement position 22 and the radially outer edge of the base 2, and / or the second gas outlets 15, 18 are arranged below the placement position 22 or between the placement position 22 and the radially outer edge of the base 2, and / or the first and / or second gas outlets 10, 15, 18 are constituted by longitudinally elongated, straight or arc-shaped recesses in the second wide side 2", and / or the recesses constituting the gas outlets 10, 15, 18 extend in the sector area occupied by the placement position 22, and / or a gas mixing system provides at least a first purge gas through a first gas source and / or provides a second purge gas through a second gas source, wherein the thermal conductivities of the two purge gases are different, and / or the air flow and / or an adjustable mixed air flow of the two purge gases are distributed to a plurality of mass flow controllers 25 by the gas mixing system, and / or at least the purge gas forming an air flow and input into a plurality of gas outlets 10, 15, 18 can be independently adjusted, and these gas outlets are spatially assigned to different placement positions 22, and / or a purge gas outlet 27 for inputting the purge gas into the gap 23 is provided on the radially inner side of the placement position 22 in the gap 23 between the base 2 and the sealing plate 9, and / or the wide side 2' of the base 2 facing the heating device 8 has a recess 29 extending in the sector area occupied by the placement position 22, and the gas outlet 10 leads into the recess.

[0045] A method, characterized in that a first gas flow is introduced into the spacer space between the axis of rotation A and the placement position 22, and a second gas flow is introduced into the spacer space below the placement position 2 or between the placement position 2 and the outer edge of the base 2, and / or the first gas flow and / or the second gas flow are introduced into the second wide side 2" through a longitudinally, linearly or arcuately extending recess, and / or the recess extends in the sector area occupied by the placement position 22, and / or the gas mixing system provides at least a first purge gas through a first gas source and / or provides a second purge gas through a second gas source, wherein the thermal conductivities of the two purge gases are different, and / or the gas mixing system distributes an adjustable mixed gas flow of the gas flow and / or the two purge gases to a plurality of mass flow controllers 25, and / or the purge gas forming the gas flow and input into at least the gas outlets 10, 15, 18 spatially assigned to different placement positions 22 can be independently adjusted.

[0046] All the disclosed features (either as a single feature or a combination of features) are essential to the invention. Therefore, the disclosure of this application also includes all the content disclosed in the relevant / attached priority documents (copies of prior applications). For this purpose, the features of the priority documents are also incorporated into the claims of this application. The dependent claims, with their features, represent unique and creative improvement solutions that can characterize the prior art even without the technical features of the cited claims, especially for divisional applications based on such technical features. The invention described in each claim may additionally have one or more features especially provided with reference numerals in the foregoing description and / or given in the list of reference numerals. The present invention also relates to various design forms, in which certain features mentioned in the above description are not implemented, especially when they are considered irrelevant to the corresponding intended use or can be replaced by other means with the same technical effect.

[0047] List of reference numerals

[0048] 1 Housing

[0049] 2 Base

[0050] 2' Wide side

[0051] 2" Wide side

[0052] 3 Substrate support

[0053] 4 Processing chamber

[0054] 5 Top of the processing chamber

[0055] 6 Intake mechanism

[0056] 7 Exhaust mechanism

[0057] 8 Heating device

[0058] 9 Sealing plate

[0059] 10 Gas outlet

[0060] 11 Input pipeline

[0061] 12 Input pipeline

[0062] 13 Supply port

[0063] 14 Rod part

[0064] 15 Gas outlet

[0065] 16 Input pipeline

[0066] 17 Input pipeline

[0067] 18 Gas outlet

[0068] 19 Input pipeline

[0069] 20 Input pipeline

[0070] 21 Substrate

[0071] 22 Cavity; Placement position

[0072] 23 Gap

[0073] 24 Rotary drive device

[0074] 25 Mass flow controller

[0075] 26 Mass flow controller

[0076] 27 Purge gas outlet

[0077] 28 Purge gas input pipeline

[0078] 29 Concavity

[0079] 29' Side wall

[0080] A Axis of rotation

Claims

1. An apparatus for heat-treating a substrate (21), the apparatus having a base (2) that can be rotationally driven about a rotational axis (A) by a rotational drive device (24), the base having a first broad side (2') facing a processing chamber (4), on which a plurality of placement positions (22) for receiving substrates (21) to be processed are arranged around the rotational axis (A), a second broad side (2") facing away from the first broad side, the second broad side being opposite a heating device (8) for heating the base (2) to a processing temperature, and A plurality of gas discharge ports, the gas discharge ports communicating with an interval space between the heating device (8) and the second wide side surface (2") of the base (2), the gas discharge ports being configured to input temperature-adjusting gas into the interval space, wherein, these gas outlets are spatially assigned to the placement positions (22) respectively and can supply temperature-controlled gas through an input pipeline extending inside the base (2). It is characterized in that the gas outlets are arranged in the second broad side (2") and open into a gap (23) between the base (2) and a sealing plate (9) fixed in position relative to the housing (1).

2. The device according to claim 1, characterized in that, An intake mechanism (6) is arranged along the rotational axis (A) and an annular exhaust mechanism (7) is arranged around the base (2) having a circular planar profile.

3. The device according to claim 1, characterized in that Each gas outlet is in fluid connection with at least one input pipeline (11, 12, 16, 17, 19, 20) having a supply port (13), and an air flow of temperature-controlled gas that can be independently adjusted by a mass flow controller (25) can be input into the supply port.

4. The device according to claim 1, characterized in that, At least one second gas outlet is arranged between a first gas outlet located between the rotational axis (A) and the placement position (22) and the radially outer edge of the base (2), or a second gas outlet is arranged below the placement position (22) or between the placement position (22) and the radially outer edge of the base (2).

5. The device according to claim 1, characterized in that, The gas outlets are formed by longitudinally extending, straight or arcuate recesses in the second broad side (2").

6. The device according to claim 1, characterized in that, The recesses forming the gas outlets extend in a fan-shaped area occupied by the placement positions (22).

7. The device according to claim 1, characterized in that, The gas mixing system provides at least a first purge gas through a first gas source and a second purge gas through a second gas source, wherein the thermal conductivities of the two purge gases are different, or the gas mixing system distributes an air flow or an adjustable mixed air flow of the two purge gases to a plurality of mass flow controllers (25).

8. The device according to claim 1, characterized in that, The purge gas forming an air flow that is at least input into a plurality of gas outlets can be independently adjusted, and these gas outlets are spatially assigned to different placement positions (22).

9. The device according to claim 1, characterized in that, In the gap (23) between the base (2) and the sealing plate (9), a purge gas outlet (27) for inputting purge gas into the gap (23) is provided radially inside the placement position (22).

10. The device according to claim 1, characterized in that, The broad side (2') of the base (2) facing the heating device (8) has a recess (29) extending in a fan-shaped area occupied by the placement positions (22), and the gas outlets open into the recess.

11. A method for heat-treating a substrate (21), wherein, The base (2) is rotationally driven about a rotational axis (A), and the base bears a plurality of substrates (21) arranged on placement positions (22) about the rotational axis (A) on a first broad side (2') facing the processing chamber (4), and the base is heated to a processing temperature by a heating device (8) which is opposed to a second broad side (2") pointing away from the first broad side (2'), wherein gas is input into an intermediate space between the heating device (8) and the second broad side (2") through a plurality of gas outlets leading into the second broad side (2") of the base (2), wherein at least one of the plurality of gas outlets through which an air flow passes and which are arranged in the second broad side (2") of the base (2) is assigned to each placement position (22), and a temperature-controlled gas for independent adjustment of the placement position (22) flows through these gas outlets, and the heat flow between the placement position (22) and the heating device (8) is affected by the temperature-controlled gas, characterized in that the base (2) is rotationally driven relative to a sealing plate (9) which is located between the second broad side (2") of the base (2) and the heating device (8) and is fixed in position relative to the housing (1), and gas is input into an intermediate space formed by a gap between the sealing plate (9) and the second broad side (2") of the base (2).

12. The method according to claim 11, wherein An air flow containing a processing gas is input into the processing chamber (4) through an air inlet mechanism (6) arranged along the rotational axis (A), and the air flow passes through the processing chamber (4) in the radial direction and is discharged through an annular exhaust mechanism (7) arranged around the base (2) having a circular planar profile.

13. The method according to claim 11, wherein The air flow of the temperature-controlled gas flowing out of at least one gas outlet arranged between the rotational axis (A) and the assigned placement position (22) is independently adjusted by a mass flow controller (25), and the gas passes through below the placement position (22).

14. The method according to claim 11, wherein A first air flow is input into the intermediate space between the rotational axis (A) and the placement position (22), and a second air flow is input into the intermediate space below the placement position (22) or between the placement position (22) and the outer edge of the base (2).

15. The method according to claim 14, wherein The first air flow and / or the second air flow is input into the second broad side (2") through a recess extending longitudinally, linearly or arcuately.

16. The method according to claim 15, wherein The recess extends in a sector area occupied by the placement position (22).

17. The method according to claim 11, wherein The gas mixing system provides at least a first purge gas through a first gas source and a second purge gas through a second gas source, wherein the thermal conductivities of the two purge gases are different, or an adjustable mixed air flow of an air flow or two purge gases is distributed to a plurality of mass flow controllers (25) by the gas mixing system.

18. A base (2) for an apparatus for heat-treating a substrate (21) according to claim 1 or a base (2) for implementing the method according to claim 11, the base having a first broad side (2') and a second broad side (2") facing away from the first broad side (2'), and a plurality of placement positions (22) for receiving the substrate (21) to be treated are arranged on the first broad side around a rotation axis (A), wherein, At least one gas outlet for inputting purge gas is spatially assigned to each placement position (22), characterized in that the gas outlet is arranged in the second broad side (2").

19. The base according to claim 18, characterized in that, There is an intake mechanism (6) arranged along the rotation axis (A) and an annular exhaust mechanism (7) arranged around a base (2) having a circular planar profile.

20. The base according to claim 18, characterized in that, Each gas outlet is in fluid connection with at least one input pipeline (11, 12, 16, 17, 19, 20) having a supply port (13), and an air flow of temperature-controlled gas that can be independently adjusted by a mass flow controller (25) can be input into the supply port.

21. The base according to claim 18, characterized in that, At least one second gas outlet is arranged between the first gas outlet located between the rotation axis (A) and the placement position (22) and the radial outer edge of the base (2), or a second gas outlet is arranged below the placement position (22) or between the placement position (22) and the radial outer edge of the base (2).

22. The base according to claim 18, characterized in that, The gas outlet is formed by a longitudinally elongated, straight or arcuate recess in the second wide side (2").

23. The base according to claim 18, wherein, The recess forming the gas outlet extends in the fan-shaped area occupied by the placement position (22).

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