Inductively coupled plasma processing device

Abstract

The present invention discloses an inductively coupled plasma processing device, comprising: a chamber body, which has a rectangular shape in a planar shape and an opening formed on the upper side; a window assembly, which includes one or more windows covering the opening to form a processing space together with the chamber body and a support frame supporting the window; a substrate support portion, which is arranged in the chamber body and supports a rectangular substrate; a gas injection portion, which injects gas into the processing space; and an antenna portion, which is arranged in a reference rectangular region corresponding to the rectangular shape of the substrate in the upper part of the window assembly to form an inductive electric field in the processing space. The antenna portion includes: 4 corner antenna groups, which are arranged adjacent to the vertices of the reference rectangular region to control the plasma density of the corner portion; and a side antenna group, which is arranged at intervals from the sides of the reference rectangular region and the 4 corner antenna groups.

Description

Technical Field

[0001] The present invention relates to an inductively coupled plasma processing apparatus. Background Art

[0002] An inductively coupled plasma processing apparatus, as a device for performing substrate processing such as a deposition process and an etching process, is provided with a chamber body that forms a sealed processing space and a window provided at the top of the chamber body, and a high-frequency antenna (RF) is provided on the upper side of the window. Electric power is supplied to the antenna to form an induced electric field in the processing space, and a processing gas is plasmaized by the induced electric field, and then substrate processing is performed.

[0003] Here, as a substrate to be processed by the inductively coupled plasma processing apparatus, any substrate can be applied as long as it is a substrate to be processed such as deposition, etching, etc., such as a substrate for an LCD panel, a wafer, etc.

[0004] On the other hand, in response to the increasing demand for large substrates and the requirement to increase the production speed by processing a larger number of substrates, the inductively coupled plasma processing apparatus for performing substrate processing has also become larger.

[0005] Accordingly, as the inductively coupled plasma processing apparatus becomes larger, it is also necessary to increase the size of the components and the antenna plane configuration size provided in the inductively coupled plasma processing apparatus.

[0006] Specifically, patterns such as those in Patent Documents 1 and 2 have been proposed for the antenna plane configuration pattern of an inductively coupled plasma processing apparatus for processing large substrates.

[0007] However, in order to perform good substrate processing, it is very important to form a uniform plasma in the processing space. However, recently, as the substrate size has increased, there have been problems of a decrease in the plasma uniformity formed in the processing space of the inductively coupled plasma processing apparatus and difficulty in controlling the plasma uniformity.

[0008] Specifically, in the case of the prior art such as Patent Documents 1 and 2, it is difficult to control the plasma near the vertex, so there is a problem that the improvement of the substrate processing uniformity is limited.

[0009] In particular, referring to Patent Documents 1 and 2, near the edge of the substrate, that is, the outermost antenna is arranged along the edge of the substrate, so there is a problem that it is impossible to independently control the plasma near the vertex of a rectangular shape.

[0010] On the other hand, in order to improve the plasma uniformity, in the case of providing multiple antenna branches, the inductance of each antenna is low, and finally the plasma density is reduced, so there is a problem that good substrate processing cannot be performed.

[0011] (Patent Document 1) KR10-2055371B1

[0012] (Patent Document 2) KR10-2020622B1 SUMMARY OF THE INVENTION

[0013] (Problems to be Solved)

[0014] In order to solve the problems described above, an object of the present invention is to provide an inductively coupled plasma processing apparatus that can control the plasma in a divided region (corner portion) without reducing the plasma density, and thus can significantly improve the uniformity of substrate processing.

[0015] (Means for Solving the Problems)

[0016] The present invention is proposed to achieve the object of the present invention described above. The present invention discloses an inductively coupled plasma processing apparatus, including: a chamber body 100 having a rectangular quadrilateral shape in a planar shape and having an opening formed on an upper side; a window assembly 200 including one or more windows 210 and a support frame 220, the one or more windows 210 covering the opening to form a processing space S together with the chamber body 100, and the support frame 220 supporting the windows 210; a substrate support unit 300 disposed in the chamber body 100 and supporting a rectangular quadrilateral substrate 10; a gas injection unit injecting gas into the processing space S; and an antenna unit 500 disposed in an upper portion of the window assembly 200 in a reference rectangular quadrilateral region corresponding to the rectangular quadrilateral shape of the substrate 10 to form an induced electric field in the processing space S. Among them, the antenna unit 500 includes: four corner antenna groups 700 disposed adjacent to vertices of the reference rectangular quadrilateral region to control the plasma density in the corner portion; and a side antenna group 510 disposed at an interval from the sides of the reference rectangular quadrilateral region and the four corner antenna groups 700.

[0017] The side antenna group 510 may include one or more side antenna members 511 disposed at an interval from the sides of the reference rectangular quadrilateral region, and one end 511a thereof is connected to an RF power source 150 and the other end 511b is grounded.

[0018] The corner annular structure of the corner antenna group 700 may have a spiral-shaped multi-annular structure.

[0019] The side antenna group 510 has one or more straight portions in sides of the rectangular quadrilateral of the substrate 10 other than vertices, and one or more side oblique portions in portions facing the corner portion.

[0020] The lateral annular structure of the lateral antenna group 510 has a multiple annular structure, and a first distance D1 between adjacent straight portions of the lateral antenna group 510 may be greater than a second distance D2 between a lateral diagonal portion of the lateral antenna group 510 and the corner antenna group 700.

[0021] The corner antenna group 700 may have a corner diagonal portion parallel to the lateral diagonal portion of the lateral antenna group 510 in a portion adjacent to the lateral antenna group 510.

[0022] The current directions in the adjacent corner diagonal portions of the corner antenna group 700 and the lateral antenna group 510 may be the same.

[0023] The corner diagonal portion of the corner antenna group 700 includes the vertex of the substrate 10 or may be disposed more inwardly than the vertex of the substrate 10.

[0024] The support frame 220 is formed with a plurality of setting openings 221; the plurality of setting openings 221 may respectively set the windows 210, and the windows 210 have a shape corresponding to the planar shape of the setting openings 221.

[0025] To arrange the plurality of windows 210 in a horizontal and vertical m×n (m and n are natural numbers of 2 or more) arrangement, the support frame 220 may be formed with the plurality of setting openings 221 having a grid structure.

[0026] The corner antenna group 700 may be arranged to overlap with a vertex setting opening 221 at a position including the vertex of the reference right-angled quadrilateral region among the plurality of setting openings 221.

[0027] A part of the lateral antenna group 510 may be arranged to overlap with the vertex setting opening 221.

[0028] The antenna unit 500 further includes one or more inner antenna groups 530, 540, and the one or more inner antenna groups 530, 540 are concentric with the lateral antenna group 510 inside the lateral antenna group 510; a part of the inner antenna groups 530, 540 may be arranged to overlap with the vertex setting opening 221.

[0029] The antenna unit 500 may further include one or more inner antenna groups 530, 540, and the one or more inner antenna groups 530, 540 are concentric with the lateral antenna group 510 inside the lateral antenna group 510.

[0030] The inner antenna group 530 may include: a first inner antenna group 530 located at the central part of the reference right-angled quadrilateral region; and one or more second inner antenna groups 540 arranged between the first inner antenna group 530 and the side antenna group 510 and concentric with the first inner antenna group 530.

[0031] The corner antenna group 700 and the side antenna group 510 may be connected to a variable capacitor for impedance adjustment and grounded.

[0032] The lengths of the antenna components constituting the corner antenna group 700, the side antenna group 510, and one or more of the inner antenna groups 530, 540 may have a deviation of 10% or less from the average length of all the antenna components.

[0033] The annular angles of the side antenna group 510 and one or more of the inner antenna groups 530, 540 may be inversely proportional to the distance to the center of the reference right-angled quadrilateral.

[0034] The present invention also discloses an inductively coupled plasma processing apparatus, including: a chamber body 100 having a right-angled quadrilateral planar shape and having an opening formed on the upper side; a window assembly 200 including one or more windows 210 and a support frame 220, the one or more windows 210 covering the opening to form a processing space S together with the chamber body 100, and the support frame 220 supporting the windows 210; a substrate support portion 300 provided in the chamber body 100 to support a right-angled quadrilateral substrate 10; a gas injection portion for injecting gas into the processing space S; and an antenna portion 500 provided in an upper portion of the window assembly 200 in a reference right-angled quadrilateral region corresponding to the right-angled quadrilateral shape of the substrate 10 to form an induced electric field in the processing space S. Among them, the antenna portion 500 includes: four corner antenna groups 700 arranged adjacent to the vertices of the reference right-angled quadrilateral region to control the plasma density of the corner portions and having a vortex-shaped corner annular structure. Each of the corner antenna groups 700 includes: a plurality of first corner antenna components 711, 712, 713 spaced apart from the upper surface of the window 210 by a first height H1 upward, spaced apart from the center of the reference right-angled quadrilateral region in the direction of the vertex, and having the same current direction; and a plurality of second corner antenna components 731, 732 spaced apart from the window 210 by a second height H2 different from the first height H1, spaced apart from the first corner antenna components 711, 712, 713 in the direction of the vertex, and having a current flowing in a direction opposite to the current direction of the first corner antenna components 711, 712, 713.

[0035] The corner antenna group 700 may include: first connection antenna components 721, 723, connecting the other ends of the respective first corner antenna components 711, 712, 713 and one ends of the respective second corner antenna components 731, 732; second connection antenna components 722, 724, connecting the other ends of the respective second corner antenna components 731, 732 and one ends of the respective first corner antenna components 711, 712, 713.

[0036] The first connection antenna components 721, 723 and the second connection antenna components 722, 724 may form a plurality of coupling parts 791 with a preset interval therebetween to change the coupling height of the coupled first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732.

[0037] The first corner antenna components 711, 712, 713 have a pair of first ends 712a, 713a, 711b, 712b, 713b, and the pair of first ends 712a, 713a, 711b, 712b, 713b are respectively connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724; the second connection antenna components 722, 724 may have a pair of second ends 731a, 732a, 731b, 732b, and the pair of second ends 731a, 732a, 731b, 732b are respectively connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724.

[0038] The first connection antenna components 721, 723 and the second connection antenna components 722, 724 may vertically extend upward from above the window 210.

[0039] The first connection antenna components 721, 723 and the second connection antenna components 722, 724 may obliquely extend upward from above the window 210.

[0040] The corner antenna group 700 applies an RF power supply to one end of the first corner antenna component 711 that is located outermost with respect to the center of the ring structure among the first corner antenna components 711, 712, 713, and may directly or indirectly ground the other end of the first corner antenna component 713 that is located innermost.

[0041] The inductively coupled plasma processing apparatus may include a side antenna group 510, and the side antenna group 510 is arranged at an interval from the sides of the reference right-angled quadrilateral region and the 4 corner antenna groups 700.

[0042] The current directions in the adjacent portions of the corner antenna group 700 and the side antenna group 510 may be the same.

[0043] In the portion where the corner antenna group 700 is adjacent to the side antenna group 510, the corner antenna group 700 and the side antenna group 510 may be configured at the same height from above the window 210.

[0044] The side antenna group 510 may include one or more side antenna components 511. The one or more side antenna components 511 are arranged at intervals from the sides of the reference right-angled quadrilateral region, and one end 511a is connected to the RF power supply 150, while the other end 511b is grounded.

[0045] The side antenna group 510 may have one or more straight portions in the sides of the right-angled quadrilateral of the substrate 10 except for the vertices, and may have one or more side diagonal portions in the portions facing the corner portions.

[0046] The side annular structure of the side antenna group 510 has a multi-annular structure, and the first distance D1 between the adjacent straight portions of the side antenna group 510 may be greater than the second distance D2 between the side diagonal portion of the side antenna group 510 and the corner antenna group 700.

[0047] At least a part of the first corner antenna components 711, 712, 713 may be arranged in parallel with the side diagonal portion of the side antenna group 510 in the portion adjacent to the side antenna group 510.

[0048] The current directions in the adjacent portions of the corner antenna group 700 and the side antenna group 510 may be the same.

[0049] The first corner antenna group 711, 712, 713 may include the vertices of the substrate 10 or may be arranged more inward than the vertices of the substrate 10.

[0050] The support frame 220 is formed with a plurality of installation openings 221; the plurality of installation openings 221 may respectively install the windows 210, and the windows 210 have shapes corresponding to the planar shapes of the installation openings 221.

[0051] To arrange the plurality of windows 210 in a horizontal and vertical m×n (m and n are natural numbers greater than or equal to 2) arrangement, the support frame 220 may be formed with the plurality of installation openings 221 having a grid structure.

[0052] The corner antenna group 700 is arranged to overlap with the vertex installation opening 221 including the vertex position of the reference right-angled quadrilateral region among the plurality of installation openings 221.

[0053] A part of the side antenna group 510 can be arranged to overlap with the vertex opening 221.

[0054] The antenna unit 500 may further include one or more inner antenna groups 530, 540 which are concentric with the side antenna group 510 inside the side antenna group 510.

[0055] The corner antenna group 700 and the side antenna group 510 can be connected to a variable capacitor for impedance adjustment and grounded.

[0056] (Advantages of the Invention)

[0057] The inductively coupled plasma processing apparatus of the present invention is provided with a corner antenna group for controlling the plasma density opposite to the vertex, i.e., the corner part, of a rectangular substrate. Thus, it has the advantage of being able to control the plasma in sub-regions (such as the corner part) without reducing the plasma density, and therefore can greatly improve the uniformity of substrate processing.

[0058] In particular, the inductively coupled plasma processing apparatus of the present invention is separate from the side antenna groups arranged along the sides except for the vertices of the rectangular substrate, and a corner antenna group for independently controlling the plasma density is separately provided corresponding to the corner part. Thus, it can independently control the corner part, which has the greatest influence on the uniformity of substrate processing, and further control the plasma density of the edge part. Under various process conditions, it can control by region without reducing the plasma density. In particular, it can control the plasma in the corner part, so it has the advantage of being able to greatly improve the uniformity of substrate processing.

[0059] In addition, the inductively coupled plasma processing apparatus of the present invention configures the corner antenna group into a vortex structure, and reduces the part with the same current direction and relatively increases the part with the opposite current direction based on the current direction flowing in the antenna component. Thus, it can minimize the weakening of the magnetic field (H Field) caused by the reverse current flow, and therefore has the advantage of being able to greatly improve the uniformity of substrate processing.

[0060] Furthermore, when setting the corner antenna group, the parts adjacent to each other of the side antenna groups are set as parallel diagonal parts (corner diagonal parts, side diagonal parts), so as to improve the magnetic field intensity formed by the corner antenna group and the side antenna group.

[0061] In addition, when setting the corner antenna group, the portions adjacent to the side antenna group are set as mutually parallel diagonal portions (corner diagonal portion, side diagonal portion), so that the current directions of the diagonal portions are the same, thereby further enhancing the intensity of the magnetic field formed by the corner antenna group and the side antenna group.

[0062] On the other hand, the lengths of the antenna components constituting the corner antenna group, the side antenna group, and further the inner antenna group are configured to have a preset deviation, thereby facilitating the impedance control of each antenna component. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Figure 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus of the present invention.

[0064] Figure 2 is showing Figure 1 a plan view of a window assembly and an antenna portion in the inductively coupled plasma processing apparatus of

[0065] Figure 3a and Figure 3b are respectively showing Figure 2 conceptual diagrams of RF power supply application and grounding in the antenna portion of

[0066] Figure 4 is showing Figure 2 a circuit diagram of an equivalent circuit of the antenna portion of

[0067] Figure 5a and Figure 5b As Figure 2 a cross-sectional view in the V-V' direction of Figure 5a is a cross-sectional view showing the case where the first corner antenna component and the second corner antenna component are set at the same height with respect to the window;

[0068] Figure 5b is a cross-sectional view showing the case where the first corner antenna component is set at a relatively lower position compared to the second corner antenna component.

[0069] Figure 6 is showing Figure 2 a table of simulation of controlling plasma density by the inductively coupled plasma processing apparatus of the present invention having an antenna portion of

[0070] Figure 7 is showing Figure 2 a partial perspective view of an example of a corner antenna group in the antenna portion of

[0071] Figure 8 is showing Figure 7 a side view of a structure connecting the first corner antenna component and the second corner antenna component in the corner antenna group of

[0072] Figure 9 is Figure 7 a plan view of the corner antenna group

[0073] Figure 10a and Figure 10b are respectively graphs showing the magnetic field improvement effect Figure 5a and Figure 5b in the case of

[0074] (Description of reference numerals)

[0075] 100: Chamber body 200: Window assembly

[0076] 300: Substrate support part 500: Antenna part Detailed implementation mode

[0077] Hereinafter, the inductively coupled plasma processing apparatus of the present invention will be described in detail with reference to the accompanying drawings as follows

[0078] As Figure 1 and Figure 2 shown, the inductively coupled plasma processing apparatus of the present invention includes: a chamber body 100 having a rectangular quadrilateral shape in plan view and having an opening formed on the upper side; a window assembly 200 including one or more windows 210 and a support frame 220, the one or more windows 210 covering the opening to form a processing space S together with the chamber body 100, and the support frame 220 supporting the windows 210; a substrate support part 300 provided in the chamber body 100 and supporting a substrate 10; a gas injection part (not shown) for injecting gas into the processing space S; and an antenna part 500 provided above the window assembly 200 in a reference rectangular quadrilateral area corresponding to the rectangular quadrilateral shape of the substrate 10 to form an induced electric field in the processing space S

[0079] The chamber body 100 has a rectangular quadrilateral shape in plan view and has an opening formed on the upper side, and a structure for forming a processing space S together with the window assembly 200 to be described later may be any structure as long as it can withstand a predetermined vacuum pressure required for performing a process

[0080] The chamber body 100 preferably has a planar shape corresponding to the shape of the substrate 10 to be processed, for example, a rectangular quadrilateral shape, and is formed with one or more gates 111 for the substrate 10 to enter and exit, and an exhaust pipe 180 can be connected, and the exhaust pipe 180 is connected to a vacuum pump (not shown) to control the pressure in the processing space S and remove by-products

[0081] In addition, the chamber body 100 is detachably coupled to the upper cover 140, and the upper cover 140 covers the antenna unit 500, thereby supporting the antenna unit 500 and shielding the induced electric field formed in the antenna unit 500, etc.

[0082] The gas injection unit (not shown) is a structure for injecting gas into the processing space S. Depending on the gas injection structure, it can have various structures and can be provided on the support frame 220 described later.

[0083] Specifically, the gas injection unit (not shown) may include: one or more flow channels formed in the support frame 220 for flowing gas; and a plurality of injection ports connected to the flow channels and formed on the bottom surface of the support frame 220.

[0084] In addition, the gas injection unit (not shown) can have various structures, such as being separately coupled and provided separately from the support frame 220, or formed in a window, or provided on the side wall of the process chamber, etc.

[0085] The substrate support unit 300 is a structure for placing the substrate 10. As long as it is a structure capable of supporting the substrate 10, it can be any structure. According to the process, an RF power supply can be applied or grounded, and a heat transfer component for cooling or heating can be provided.

[0086] The window assembly 200 is a structure including one or more windows 210 that cover the opening to form the processing space S together with the chamber body 100 and a support frame 220 that supports the windows 210. Depending on the setting structure of the windows 210 and the support frame 220, it can have various structures.

[0087] The window 210 is a structure that intervenes between the processing space S and the antenna unit 500 so that an induced electric field can be formed in the processing space S through the antenna unit 500. It can have various structures, and materials such as quartz, ceramics, and metal materials can be used.

[0088] In order to process large substrates, the window 210 can also be composed of multiple windows 210 instead of a single window 210.

[0089] Here, in the case of setting multiple windows 210, considering the formation of an induced electric field for substrate processing, it can have various shapes, such as polygons such as triangles and quadrilaterals, circles, ellipses, etc.

[0090] In addition, the planar shape of the window 210 can have a single shape such as a quadrilateral, or can be various combinations such as a combination of multiple planar shapes with different shapes and sizes.

[0091] The support frame 220 is a structure for supporting the window 210. As long as it can stably support the window 210, it can be any structure.

[0092] As an example, the support frame 220 preferably has a metallic material, and thus can stably support the window 210 as a heavy object. However, as long as sufficient rigidity can be provided, it can have various materials, such as a combination of metallic materials, non-metallic materials, and non-metallic materials, etc.

[0093] On the other hand, in order to support each window 210 when a plurality of the windows 210 are provided, the support frame 220 may be formed with a plurality of installation openings 221 having a shape corresponding to the planar shape of the supported window 210.

[0094] That is, the support frame 220 is formed with a plurality of installation openings 221, and the plurality of installation openings 221 may be respectively provided with windows 210 having a shape corresponding to the planar shape of the installation opening 221.

[0095] As an example, the support frame 220 may be formed with a plurality of installation openings 221 having a grid structure, so that a plurality of windows 210 are arranged in an m×n (m and n are natural numbers of 2 or more) arrangement in the horizontal and vertical directions.

[0096] For this purpose, the support frame 220 may include: an outer frame 222, formed in a rectangular shape and provided at the upper end of the chamber body 100; an inner frame 223, formed with installation openings 221 having a grid structure inside the outer frame 222.

[0097] The outer frame 222, as a structure having the planar shape of the upper end of the chamber body 100, that is, a rectangular shape and provided at the upper end of the chamber body 100, may have various structures.

[0098] Here, an O-ring (not shown) is interposed between the outer frame 222 and the upper end of the chamber body 100, and thus the outer frame 222 can be hermetically coupled to the chamber body 100.

[0099] The inner frame 223, as a structure formed with installation openings 221 configured in a grid structure inside the outer frame 222, for example, arranged in an m×n (m and n are natural numbers of 2 or more) arrangement in the horizontal and vertical directions, may be composed of (m - 1) horizontal frames and (n - 1) vertical frames corresponding to the number of grids.

[0100] Considering the load of the window 210, the inner frame 223 and the outer frame 222 preferably use a material with high rigidity, such as metal, but are not limited thereto.

[0101] In addition, the inner frame 223 and the outer frame 222 may be formed of a plurality of support members, but are preferably formed integrally in consideration of rigidity with the minimum number.

[0102] On the other hand, the support structure for the set opening 221 formed in the support frame 220 may have various structures according to the window 210.

[0103] For example, as Figure 1 shown, a step may be formed on the inner circumferential surface of the set opening 221 of the support frame 220 to correspond to the step formed on the edge side surface of the window 210, and thus the window 210 can be supported.

[0104] The antenna unit 500 is a structure provided in the upper part of the window assembly 200 within a reference rectangular region corresponding to the planar rectangular quadrilateral shape of the opening part to form an induced electric field in the processing space S, and may have various structures according to the size of the substrate 10 to be processed, the substrate processing process conditions, etc.

[0105] On the other hand, as the size of the substrate 10 to be processed increases, the planar size of the antenna unit 500 configured accordingly also increases, so there is a problem that it is difficult to perform uniform substrate processing.

[0106] Accordingly, in the past, antenna components as conductors were arranged in various patterns to solve this problem, such as in Patent Documents 1 and 2.

[0107] However, according to the prior art, in the case of dividing and arranging multiple antenna components, compared with applying the same RF power supply, the impedance decreases, so there is a problem that the plasma density decreases.

[0108] Furthermore, even if the impedance is controlled by dividing into multiple antenna components, it is impossible to control the impedance at the vertices, that is, the corner parts, in the rectangular quadrilateral planar shape, so there is a problem that the uniformity of substrate processing obtained is limited.

[0109] Accordingly, as Figures 2 to 5b shown, the inductively coupled plasma processing apparatus of the present invention is characterized in that the antenna unit 500 is arranged adjacent to the vertices of the reference rectangular region to control the plasma density of the corner parts, and includes four corner antenna groups 700 having a vortex-shaped corner ring structure. Furthermore, while minimizing the weakening of the magnetic field, the impedance of the corner parts, that is, the plasma density, can be controlled, so the uniformity of substrate processing can be improved.

[0110] Here, the reference rectangular region is a region corresponding to the planar shape of the substrate 10 to be processed, that is, the rectangular quadrilateral shape, and the reference rectangular region is defined by a region larger than the edge of the substrate 10.

[0111] As an example, the reference rectangular region may be defined by a rectangular quadrilateral region larger than the planar size of the substrate 10 and smaller than the size of the opening formed by the above-mentioned outer frame 222.

[0112] The four corner antenna groups 700 are antenna groups configured adjacent to the vertices of the reference right-angled quadrilateral region to control the plasma density in the corner portions and having a corner annular structure in a vortex shape, and can have various structures according to the set length and set angle.

[0113] In particular, the corner antenna group 700 has a vortex shape, and as a whole, it can be formed into a corner annular structure such as a vortex shape with a triangular or trapezoidal planar shape.

[0114] The corner annular structure is a single annular structure, and is preferably configured as a multi-annular structure.

[0115] At this time, the corner antenna group 700 can be configured such that one end of the power supply application component 613 for applying an RF power supply is located on the outermost side, and the other end of the grounding component 623 for grounding is located on the innermost side.

[0116] Considering that a relatively high voltage is applied to the part where the RF power supply is applied, the RF power supply is applied to the outermost side in the corner antenna group 700, and thus a relatively strong magnetic field (electric field) can be formed together with the adjacent antenna component, that is, the side antenna group 510.

[0117] Then, the power supply application component 613 and the grounding component 623 can be electrically connected to the antenna components of the corner antenna group 700 by various methods such as welding connection and bolt connection.

[0118] In particular, the height of a part of the antenna components of the corner antenna group 700 provided from the upper surface of the window 210 can be changed. In order to adjust the installation height of the antenna components, the power supply application component 613 and the grounding component 623 are preferably combined with the antenna components by bolt connection.

[0119] Then, considering the adjustment of the installation height of the antenna components, the power supply application component 613 and the grounding component 623, as plate-shaped conductive components, can be formed with a plurality of bolt connection holes (not shown) for bolt connection, and the plurality of bolt connection holes are spaced at a preset interval.

[0120] On the other hand, when forming the corner antenna group 700 into a corner annular structure, as Figures 2 to 3b , Figure 7 and Figure 9As shown, it may include: a plurality of first corner antenna components 711, 712, 713, which are arranged at intervals in the direction from the center of the reference right-angled quadrilateral region to the vertex and have the same current direction; a plurality of second corner antenna components 731, 732, which are arranged at intervals in the direction from the first corner antenna components 711, 712, 713 to the vertex, and the current flows in a direction opposite to the current direction of the first corner antenna components 711, 712, 713.

[0121] The plurality of first corner antenna components 711, 712, 713, as antenna components that are arranged at intervals in the direction from the center of the reference right-angled quadrilateral region to the vertex and have the same current direction, may be composed of a plate-shaped conductor made of a material with high conductivity, such as copper.

[0122] The plurality of second corner antenna components 731, 732, as antenna components that are arranged at intervals in the direction from the first corner antenna components 711, 712, 713 to the vertex and the current flows in a direction opposite to the current direction of the first corner antenna components 711, 712, 713, may be composed of a plate-shaped conductor made of a material with high conductivity, such as copper.

[0123] At this time, in order to form a strong magnetic field in the window 210, the plurality of first corner antenna components 711, 712, 713 and the plurality of second corner antenna components 731, 732 are preferably arranged such that the thickness direction is kept horizontal.

[0124] On the other hand, as Figure 5a shown, when the corner antenna group 700 has a corner ring structure, the second corner antenna components 731, 732 with reverse flowing current weaken the magnetic field formed by the first corner antenna components 711, 712, 713, so there is a problem of weakening the magnetic field near the corner.

[0125] Accordingly, the second height H2 of the plurality of second corner antenna components 731, 732 provided for the window 210 is preferably different from the first height H1 of the plurality of first corner antenna components 711, 712, 713 provided for the window 210, that is, there is a height difference D.

[0126] Here, the first height H1 and the second height H2 may be defined by the distance from the upper surface of the window 210 to the bottom surface of the antenna component spaced upward.

[0127] Then, as Figure 5b shown, preferably, the first height H1 is less than the second height H2.

[0128] On the other hand, with respect to the relative height differences between the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732, the set heights of the respective antenna components are adjusted according to the required process conditions, and thus various embodiments can be implemented.

[0129] As Figure 5b shown, when the plurality of second corner antenna components 731, 732 are set to be higher than the plurality of first corner antenna components 711, 712, 713, the influence of the magnetic field generated by the plurality of second corner antenna components 731, 732 is reduced, and thus the weakening of the magnetic field can be minimized.

[0130] On the other hand, as Figure 7 shown, for the structure as described above, the corner antenna group 700 may include: first connection antenna components 721, 723 that connect the other ends of the respective first corner antenna components 711, 712, 713 and the one ends of the respective second corner antenna components 731, 732; and second connection antenna components 722, 724 that connect the other ends of the respective second corner antenna components 731, 732 and the one ends of the respective first corner antenna components 711, 712, 713.

[0131] The first connection antenna components 721, 723, as the antenna components that connect the other ends of the respective first corner antenna components 711, 712, 713 and the one ends of the respective second corner antenna components 731, 732, may be formed of a plate-shaped conductive material such as copper, which is a material with high conductivity.

[0132] The second connection antenna components 722, 724, as the antenna components that connect the other ends of the respective second corner antenna components 731, 732 and the one ends of the respective first corner antenna components 711, 712, 713, may be formed of a plate-shaped conductive material such as copper, which is a material with high conductivity.

[0133] The first connection antenna components 721, 723 and the second connection antenna components 722, 724, as the antenna components for connecting the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 respectively, may be of any structure as long as it is a structure for connecting the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732.

[0134] As an example, the first connection antenna components 721, 723 and the second connection antenna components 722, 724 may be arranged to extend vertically and / or obliquely upward from above the window 210.

[0135] Here, when the first connecting antenna components 721 and 723 and the second connecting antenna components 722 and 724 extend obliquely upward from above the window 210, the distance between the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 can be increased in the horizontal direction compared to the case of vertical extension. Accordingly, the influence brought by the magnetic field generated by passing through the plurality of second corner antenna components 731, 732 is reduced, and thus the weakening of the magnetic field can be minimized more effectively.

[0136] In addition, the first connecting antenna components 721 and 723 and the second connecting antenna components 722 and 724 can have various shapes and structures, such as linear, curved, serrated, etc., according to the positions of the ends of the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 used for connection.

[0137] On the other hand, the first connecting antenna components 721 and 723 and the second connecting antenna components 722 and 724 can be formed with a plurality of engaging portions 791 having a preset interval, so that the engaging height of the engaged first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 can be changed.

[0138] As Figure 8 shown, the plurality of engaging portions 791 are formed on the first connecting antenna components 721 and 723 and the second connecting antenna components 722 and 724 as a preset interval, so that the engaging height of the engaged first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 can be changed. According to the engaging structure between components, it can have various structures.

[0139] For example, the plurality of engaging portions 791 can be composed of bolt insertion holes for inserting bolts in the case of bolt-engaging components.

[0140] On the other hand, when the corner antenna group 700 is configured as a triangle or a trapezoid, the first corner antenna components 711, 712, 713 and the second corner antenna components 731, 732 can be inclined, that is, arranged obliquely on the sides of the reference right-angled quadrilateral.

[0141] In particular, the first corner antenna components 711, 712, 713 can be arranged in parallel with the first diagonal part 511d of the side antenna group 510 to be described later.

[0142] At this time, the second corner antenna components 731, 732 can also be arranged in parallel with the first diagonal part 511d of the side antenna group 510 to be described later.

[0143] For the first corner antenna components 711, 712, 713, if they are arranged in parallel with the first diagonal part 511d of the side antenna group 510 described later, then Figure 2 and Figure 5b As shown in the part adjacent to the side antenna group 510, when power is applied to make the current flow in the same direction as the first diagonal part 511d of the side antenna group 510, a partially enhanced induced electric field can be formed.

[0144] The first corner antenna components 711, 712, 713 have a pair of first ends 712a, 713a, 711b, 712b, 713b, and the pair of first ends 712a, 713a, 711b, 712b, 713b are respectively connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724. The second connection antenna components 722, 724 may have a pair of second ends 731a, 732a, 731b, 732b, and the pair of second ends 731a, 732a, 731b, 732b are respectively connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724.

[0145] The first ends 712a, 713a, 711b, 712b, 713b, as the components respectively connecting the first connection antenna components 721, 723 and the second connection antenna components 722, 724, can be integrated with the first corner antenna components 711, 712, 713.

[0146] The second ends 731a, 732a, 731b, 732b, as the components respectively connecting the first connection antenna components 721, 723 and the second connection antenna components 722, 724, can be integrated with the second connection antenna components 722, 724.

[0147] At this time, when the corner antenna group 700 forms a triangle or a trapezoid, in order to be smoothly connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724, the first ends 712a, 713a, 711b, 712b, 713b are preferably parallel to the sides of the reference right-angled quadrilateral.

[0148] The first ends 712a, 713a, 711b, 712b, 713b, as the parts extending from at least one end of the two ends of the first corner antenna components 711, 712, 713 to be connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724, can extend from each side respectively with the vertices of the reference right-angled quadrilateral as the reference.

[0149] Then, the first corner antenna components 711, 712, 713 can be connected to the first ends 712a, 713a, 711b, 712b, 713b through the additionally configured first vertical portions 711c.

[0150] On the other hand, the second ends 731a, 732a, 731b, 732b, which are parts extending from at least one end of both ends of the second corner antenna components 731, 732 to be connected to the first connection antenna components 721, 723 and the second connection antenna components 722, 724, can extend from each side with reference to the vertices of a reference right-angled quadrilateral.

[0151] Then, the second corner antenna components 731, 732 can also be connected to the second ends 731a, 732a, 731b, 732b through the second vertical portions 731c.

[0152] On the other hand, the first ends 712a, 713a, 711b, 712b, 713b and the first vertical portions 711c are formed integrally in the first corner antenna components 711, 712, 713 or can be connected by separate components.

[0153] In addition, the second ends 731a, 732a, 731b, 732b and the second vertical portions 731c can be formed integrally in the second corner antenna components 731, 732 or can be connected by separate components.

[0154] Figure 10a and Figure 10b respectively show the cases where the height of the window 210 is constant as in Figure 5a and the magnetic field curves formed in the case of the antenna structure as shown in Figure 5b and Figures 7 to 9 .

[0155] As shown in Figure 10a and Figure 10b , it can be confirmed that in the case of the antenna structure shown in Figure 5b , Figures 7 to 9 which is the structure of the present invention, the magnetic field in the corner portion of the relative reinforcement substrate is strengthened, that is, the reduction of the magnetic field is minimized.

[0156] On the other hand, the corner antenna group 700 having the above-described structure is used in combination with antenna structures of various patterns and structures in the remaining portions except for the corner portions.

[0157] In particular, the antenna unit 500 including the corner antenna group 700 may include a side antenna group 510, and the side antenna group 510 is arranged at intervals from the sides of the reference right-angled quadrilateral region and the 4 corner antenna groups 700.

[0158] The side antenna group 510, which is an antenna group arranged at intervals from the sides of the reference right-angled quadrilateral region and the four corner antenna groups 700, may include a plurality of side antenna components 511.

[0159] Then, the side antenna component 511, which is an antenna component provided with one or more and arranged at intervals from the sides of the reference right-angled quadrilateral region and the four corner antenna groups 700 to form the side antenna group 510, may be set in a preset pattern using a plate-shaped conductor such as copper.

[0160] In particular, the side antenna group 510 may have one or more loops through the side antenna components 511, preferably a side annular structure with multiple loops.

[0161] In addition, preferably, the current directions in the adjacent parts of the corner antenna group 700 and the side antenna group 510 are the same.

[0162] As described above, if the current directions flowing in the first corner antenna components 711, 712, 713 of the corner antenna group 700 are the same, a stronger induced electric field can be formed.

[0163] In addition, the corner antenna group 700 and the side antenna group 510 may be arranged at the same height above the window 210 in the part adjacent to the side antenna group 510.

[0164] As described above, if the corner antenna group 700 and the side antenna group 510 can be arranged at the same height above the window 210 in the part adjacent to the side antenna group 510, the effect of strengthening the induced electric field formed by the corner antenna group 700 and the side antenna group 510 can be maximized.

[0165] On the other hand, the number of side antenna components 511 provided and their lengths may be determined according to the lengths and numbers of other antenna components such as the antenna components constituting the corner antenna group 700.

[0166] Here, in order to facilitate the control of the overall impedance of the antenna unit 500, the length of the side antenna component 511 is preferably the same as the lengths of other antenna components or has a preset allowable deviation.

[0167] Then, each annular angle of the side antenna component 511 may have an annular angle of 90°×k such as 90°, 180°, 270°, 360° (where k is a natural number of 1 or more) at the center of the reference right-angled quadrilateral region.

[0168] Here, the annular angle is defined by the rotation angle from one end to the other end with the center of the reference right-angled quadrilateral region as the reference.

[0169] On the other hand, as an example, Figures 2 to 3b As shown, the side antenna components 511 of the side antenna group 510 are arranged at a predetermined interval from the sides of the reference right-angled quadrilateral region, and one end 511a is connected to the RF power supply 150, while the other end 511b can be grounded.

[0170] In addition, in order to form an annular structure, the side antenna group 510, particularly the side antenna components 511, may have one or more straight portions in the sides of the right-angled quadrilateral of the substrate 10 except for the vertices, and may have one or more side diagonal portions 511d, 511g in the portions facing the corner portions.

[0171] Here, when the side annular structure of the side antenna group 510 has a multi-annular structure, in order to strengthen the induced electric field in the corner portion, the first distance D1 between adjacent straight portions is preferably greater than the second distance D2 between the outermost side diagonal portion 511d of the side diagonal portions of the side antenna group 510 and the corner antenna group 700.

[0172] More specifically, here, the second distance D2 may be defined by the distance between the outermost side diagonal portion 511d of the side diagonal portions of the side antenna group 510 and the first corner antenna components 711, 712, 713 of the corner antenna group 700 closest to the outermost side diagonal portion 511d.

[0173] In addition, when the side antenna group 510 has one or more side diagonal portions 511d, 511g, in order to form a strengthened induced electric field together with the side diagonal portions 511d, 511g, the corner antenna group 700 may form the first corner antenna components 711, 712, 713 in parallel in the portion adjacent to the side diagonal portion 511d of the side antenna group 510.

[0174] That is, the first corner antenna components 711, 712, 713 may form a corner diagonal portion parallel to the side diagonal portion 511d of the side antenna group 510.

[0175] Furthermore, in the side antenna group 510 and the corner antenna group 700, the current directions in adjacent portions, such as diagonal portions (corner diagonal portion, side diagonal portion), are the same, and thus a strengthened induced electric field can be formed.

[0176] Specifically, as Figure 5a and Figure 5bAs shown, the current flowing directions of the lateral diagonal portions 511d and 511g of the lateral antenna group 510 and the first corner antenna components 711, 712, and 713 of the corner antenna group 700 parallel thereto are made the same, and thus an enhanced induced electric field can be formed.

[0177] On the other hand, for the corner diagonal portions having the same current direction as the first corner antenna components 711, 712, and 713 of the corner antenna group 700, especially the lateral diagonal portions 511d and 511g of the lateral antenna group 510, in order to control the plasma density near the vertex of the substrate 10, when viewed from above, it preferably includes the vertex of the substrate 10 or is disposed more inward than the vertex of the substrate 10.

[0178] On the other hand, in order to form an annular structure, the lateral antenna group 510 may include four lateral antenna components 511, and one end 511a of each of the four lateral antenna components 511 is located at the center of each of the four sides of the reference rectangular quadrilateral region.

[0179] Then, as Figures 2 to 3b shown, each of the lateral antenna components 511 is arranged on each side in a clockwise or counterclockwise direction, and may include: a first straight portion 511c having one end 511a, an extended straight portion 511e, and a second straight portion 511h having the other end 511b.

[0180] The first straight portion 511c is a portion parallel to the edge of the first side from the first side to near the corner antenna group 700 at the first vertex.

[0181] Here, one or more parallel portions may be formed in the first straight portion 511c.

[0182] Then, the parallel portion is defined as a portion that branches from one wire into two or more and then recombines into one wire in order to partially expand the formation range of the induced electric field.

[0183] The extended straight portion 511e is a portion parallel to the edge of the second side extending perpendicular to the first side from the first straight portion 511c.

[0184] Here, one or more parallel portions may be formed in the extended straight portion 511e in order to partially expand the formation range of the induced electric field.

[0185] On the other hand, a first diagonal portion 511d - lateral diagonal portion is preferably provided between the first straight portion 511c and the extended straight portion 511e, and the first diagonal portion 511d extends from the first straight portion 511c parallel to the corner antenna group 700.

[0186] The first diagonal part 511d, as a side diagonal part, is a part that extends from the first straight part 511c and extends in parallel with the corner antenna group 700, and is used together with the corner antenna group 700 to effectively control the plasma density in the corner part.

[0187] Here, the extended straight part 511e extends from the first diagonal part 511d.

[0188] The second straight part 511h is a part that extends from the extended straight part 511e so that the other end 511b is located on the third side perpendicular to the second side and is parallel to the edge of the third side.

[0189] In order to partially expand the range of the induced electric field formation, one or more parallel parts may be formed in the second straight part 511h.

[0190] On the other hand, a second diagonal part 511g - a side diagonal part - is preferably formed between the extended straight part 5110e and the second straight part 511h. The second diagonal part 511g is parallel to the corner antenna group 700 located at the second vertex inside the first diagonal part 511d of the other side antenna component 511.

[0191] The second diagonal part 511g, as a side diagonal part, is a part that extends from the extended straight part 511e and is parallel to the corner antenna group 700 located at the second vertex inside the first diagonal part 511d of the other side antenna component 511. It is used together with the first diagonal part 511d and the corner antenna group 700 to effectively control the plasma density in the corner part.

[0192] Here, the second straight part 511h extends from the first diagonal part 511d.

[0193] On the other hand, as described above, the first diagonal part 511d and the second diagonal part 511g, as parts used to effectively control the plasma density in the corner part together with the corner antenna group 700, are preferably such that the current flow direction is the same as that in the part of the corner antenna group 700 adjacent to the first diagonal part 511d and the second diagonal part 511g.

[0194] Then, in order to effectively control the plasma density in the corner part together with the corner antenna group 700, the first distance D1 between the extended straight parts 511e of the side antenna component 511 and the extended straight parts 511e of the other side antenna component 511 is preferably greater than the second distance D2 between the first diagonal part 511d of the side antenna component 511 and the corner diagonal part 521c of the adjacent corner antenna part 520.

[0195] Since the second spacing D2 is smaller than the spacing in the straight portion of the side antenna member 511, that is, the first spacing D1, a stronger magnetic field is formed compared to the magnetic fields in other portions, thereby locally increasing the plasma density.

[0196] On the other hand, although the embodiment illustrates that there are four side antenna groups 510, various combinations can be achieved according to the length of the antenna member, etc., such as having two or more.

[0197] However, in order to form a relatively concentrated magnetic field together with the corner antenna group 700 described later, the side antenna group 510 preferably forms an inclined portion facing the corner antenna group 700.

[0198] The inclined portion, as a portion adjacent to the corner antenna group 700 described later and used to form a relatively concentrated magnetic field, preferably has a time power supply such that the current flows in the same direction as the current flowing in the corner antenna group 700, and various shapes can be formed facing the corner antenna group 700, such as a straight line, a curve, etc.

[0199] On the other hand, when the substrate 10 to be processed is large-sized, in order to form an induced electric field suitable for processing a large substrate, the antenna unit 500 can be provided with inner antenna groups 530, 540 with various patterns together inside the side antenna group 510 and the side antenna group 510, or the side antenna group 510 may not be required.

[0200] In order to form an induced electric field suitable for processing a large substrate, the inner antenna groups 530, 540, as antenna groups provided inside the side antenna group 510, can be configured in various patterns, be concentric with the side antenna group 510, or be configured with one or more antenna groups having a small annular structure, etc.

[0201] As an example, the antenna unit 500 may further include one or more inner antenna groups 530, 540, and the one or more inner antenna groups 530, 540 are concentrically arranged with the side antenna group 510.

[0202] In particular, the inner antenna groups 530, 540 may include: a first inner antenna group 530 located at the center of the reference right-angled quadrilateral region; one or more second inner antenna groups 540 arranged between the first inner antenna group 530 and the side antenna group 510 and concentric with the first inner antenna group 530.

[0203] The first inner antenna group 530, as an antenna group configured in a circular or polygonal (preferably a quadrilateral) pattern at the center of the reference right-angled quadrilateral region through one or more antenna members, can have various structures according to the number of antenna members, the annular angle, and the pattern.

[0204] As an example, the planar shape of the first inner antenna group 530 has a right-angled quadrilateral pattern and can be composed of two antenna components, and can be arranged at an annular angle of approximately 810°.

[0205] The first inner antenna group 530 can have a triple annular structure according to the annular angle and the number of settings as described above.

[0206] On the other hand, one end of each antenna component can be respectively arranged on the opposite sides.

[0207] Then, the first inner antenna group 530 can be located within the central setting opening 221 which is in the center among the above-mentioned plurality of setting openings 221.

[0208] On the other hand, the first inner antenna group 530 is arranged relatively more inward compared to the second inner antenna group 540 and the side antenna group 510. Preferably, in the case of antenna components with the same actual length, it has a relatively larger annular angle.

[0209] The second inner antenna group 540 can be provided with more than one and arranged between the first inner antenna group 530 and the side antenna group 510, and can be concentric with the first inner antenna group 530.

[0210] Then, the second inner antenna group 540 can have the same or a similar pattern as the above-mentioned side antenna group 510.

[0211] As an example, as Figures 2 to 3b shown, the second inner antenna group 540 has a planar shape with a right-angled quadrilateral pattern and can be composed of four antenna components, and can be arranged at an annular angle of approximately 270°.

[0212] According to the annular angle and the number of settings as described above, the second inner antenna group 540 can have a triple annular structure.

[0213] On the other hand, one end of each antenna component can be respectively arranged on four sides.

[0214] Then, the second inner antenna group 540 can be arranged to surround the central setting opening 221 which is in the center among the above-mentioned plurality of setting openings 221.

[0215] On the other hand, the second inner antenna group 540 is arranged relatively more inward compared to the side antenna group 510. In the case of antenna components with the same actual length, the second inner antenna group 540 preferably has an annular angle smaller than that of the side antenna group 510.

[0216] Then, the second inner antenna group 540 is similar to the above-described side antenna group 510. In order to form a partially enhanced induced electric field, the second inner antenna group 540 preferably forms a diagonal portion facing the corner antenna group 700.

[0217] As a part for forming a partially enhanced magnetic field near the corner antenna group 700 to be described later, the diagonal portion preferably applies a power supply so that current flows in the same direction as the current flowing in the corner antenna group 700, and can form various shapes facing the corner antenna group 700, such as a straight line, a curve, etc.

[0218] The inner antenna groups 530 and 540 can have one or more annular shapes, preferably a multi-annular inner annular structure, through the inner antenna members 531 and 541.

[0219] On the other hand, regarding the setting of the above-described corner antenna group 700, the corner antenna group 700 can be set to overlap with the vertex setting opening 221 at the position of the vertex including the vertex of the reference right-angled quadrilateral region among the plurality of setting openings 221.

[0220] As described above, when the corner antenna group 700 is set to overlap with one vertex setting opening 221, it is possible to prevent distortion by the support frame 220 when forming a relatively stronger induced electric field.

[0221] In addition, a part of the side antenna group 510 can be located at the vertex setting opening 221 to prevent distortion by the support frame 220 when forming a relatively stronger induced electric field.

[0222] Furthermore, a part of the inner antenna groups 530 and 540 can be overlapped and set with the vertex setting opening 221 to prevent distortion by the support frame 220 when forming a relatively stronger induced electric field.

[0223] On the other hand, as Figure 4 shown, at least one end of at least a part of the antenna members 511, 521, 531, and 541 constituting the antenna unit 500 can be connected to variable capacitors V30, V41 to V44, V21 to V24, and V11 to V14 (VVC; Voltage-Variable Capacitor) for adjusting the corresponding impedance and grounded.

[0224] Then, one end of the antenna members 511, 521, 531, and 541 constituting the antenna unit 500 is connected to an RF power supply 150 set at a preset frequency through a matching network.

[0225] The RF power supply 150, which is a power supply for applying RF power to the antenna unit 500 to form an induced electric field near the window 210, can use an RF power supply with a frequency suitable for performing the required process.

[0226] The variable capacitors V30, V41 to V44, V21 to V24, and V11 to V14, which are structures that are connected to and grounded at the ground terminals of at least a part of the antenna components 511, 521, 531, and 541 that make up the antenna unit 500 and adjust the impedance for controlling the plasma density, can have various structures.

[0227] As an example, in order to control the plasma density in the central part, the first inner antenna group 530 can be connected to two antenna components 531 connected in parallel and a variable capacitor V30.

[0228] Then, in order to control the plasma density in the middle part surrounding the central part, the second inner antenna group 540 can be respectively connected to variable capacitors V41 to 44 in the four antenna components 531 connected in parallel.

[0229] Then, in order to control the plasma density in the edge part surrounding the middle part, the side antenna group 510 can be respectively connected to variable capacitors V11 to 14 in the four antenna components 511 connected in parallel.

[0230] On the other hand, in an embodiment of the present invention, an example of connecting all of the variable capacitors V21 to 24 is illustrated, but of course, only a part of the variable capacitors V21 to 24 can be connected, or all or a part of fixed capacitors with a predetermined capacitance can be provided.

[0231] As described above, the antenna unit 500 including the side antenna group 510 and the corner antenna group 700 can independently control the plasma density in the central part and the corner part, and thus can perform more uniform substrate processing, such as an etching process.

[0232] Furthermore, the antenna unit 500 is provided with a first inner antenna group 530 and a second inner antenna group 540 located inside on the basis of the side antenna group 510 and the corner antenna group 700, and further as Figure 6 It can independently control the plasma density in the central part corresponding to the center of the reference right-angled quadrilateral region, the middle part surrounding the central part, the edge part surrounding the middle part, and the corner parts corresponding to the four vertices of the reference right-angled quadrilateral region, and thus can perform more uniform substrate processing, such as an etching process.

[0233] For reference, Figure 6It is a table showing a plasma detection map based on values detected by a plasma detection device that sets probes for detecting plasma at grid points in a virtual rectangular quadrilateral considering the size of the substrate.

[0234] Here, the antenna unit 500 is configured to have the structure shown in Figures 2 to 4 and individually controls the rotation speeds of the respective variable capacitors (VVCs), and further controls the plasma intensity in the central portion, intermediate portion, edge portion, and corner portion.

[0235] In addition, for detecting plasma, a vacuum pressure of 10 mTorr and Ar of 2000 sccm were used as process conditions.

[0236] On the other hand, regarding Figure 6 , as described above, the central portion, as a region corresponding to the central portion of the reference rectangular quadrilateral region, is defined by the region inside the edge portion where the later-described side antenna group 510 is provided, for example, the region where the first inner antenna group 530 is provided.

[0237] As Figure 6 shown, by reducing the VVC value of the first inner antenna group 530 and relatively increasing the VVC values of the remaining second inner antenna group 540, side antenna group 510, and corner antenna group 700, it is possible to confirm an increase in the plasma density in the central portion.

[0238] Then, as Figure 2 , Figure 3a and Figure 3b shown, the edge portion, as the region where the side antenna group 510 provided along the edge of the substrate 10 is set, can be defined by the region including the edge of the substrate 10.

[0239] For this purpose, the outermost side antenna member 511 in the side antenna group 510 is preferably arranged along the edge of the substrate 10 except for the corner portion.

[0240] As can be seen from Figure 6 , compared with the first example, the VVC values of the first inner antenna group 530 and the second inner antenna group 540 are made the same, the VVC value of the corner antenna group 700 is made slightly smaller than the VVC value of the second inner antenna group 540, and the VVC value of the side antenna group 510 is set to a relatively minimum value, and it is possible to confirm that a high-density plasma is formed in the edge portion.

[0241] The corner portion, as the portion outside the side antenna group 510 near the vertex of the reference rectangular quadrilateral region, can be defined by the region where the corner antenna group 700 is provided. Here, near the vertex, that is, the corner portion is preferably formed in a triangular shape.

[0242] Then, regarding the edge position of the substrate 10, preferably, as Figure 2 , Figure 3a and Figure 3b shown, the corner diagonal portion 521c that has a current flowing in the same direction as the first diagonal portion 511d of the side antenna member 511 in the corner antenna group 700 includes the vertex of the substrate 10 or is located inside the vertex of the substrate 10.

[0243] Then, the portion in the corner antenna group 700 that has a current flowing in the same direction as the first diagonal portion 511d of the side antenna member 511 also preferably includes the vertex of the substrate 10 or is located inside the vertex of the substrate 10.

[0244] On the other hand, it can be seen from Figure 6 that, compared with the first example, the VVC value of the first inner antenna group 530 is made relatively large, the VVC values of the second inner antenna group 540 and the side antenna group 510 are made greater than the VVC value of the first inner antenna group 530, and the VVC value of the corner antenna group 700 is made relatively the smallest, that is, very small. Furthermore, it can be confirmed that a high-density plasma is formed in the corner portion.

[0245] Here, when controlling the VVC value of the corner antenna group 700, considering the position of the gate 111 and the sensitivity to surrounding conditions, all or part of the VVC value of the corner antenna group 700 can be set differently.

[0246] Finally, the intermediate portion is an area located between the central portion where the first inner antenna group 530 is provided and the edge portion where the side antenna group 510 is provided, and is in the shape of a quadrilateral ring surrounding the central portion. For example, it can be defined by the area where the second inner antenna group 540 is provided.

[0247] It can be seen from Figure 6 that, compared with the first example, the VVC value of the first inner antenna group 530 is relatively increased, the VVC value of the second inner antenna group 540 is made the same as the VVC value of the first inner antenna group 530, the VVC value of the side antenna group 510 is made the largest, and the VVC value of the corner antenna group 700 is made relatively the smallest. Furthermore, it can be confirmed that a high-density plasma is formed in the intermediate portion.

[0248] On the other hand, according to an embodiment of the present invention, it was confirmed that in the past (a structure without a core antenna group), the best result of the etching uniformity (etching SiON) was 10%, but the experimental result of the structure of the antenna unit 500 having the structure shown in Figures 2 to 3b was an uniformity of about 7.8%. It was confirmed that the uniformity of substrate processing was greatly improved.

[0249] On the other hand, the core features of the antenna unit 500 are as follows: the overall configuration has a right-angled quadrilateral shape, and the side antenna group 510 and the four corner antenna groups 700 corresponding to the four vertices are combined, so that the plasma density can be independently controlled for the edge part and the corner part.

[0250] Accordingly, for the antenna unit 500, except for the embodiments shown in Figures 2 to 3b as long as the overall configuration has a right-angled quadrilateral shape and has a structure including a side antenna group 510 and four corner antenna groups 700 corresponding to the four vertices, any structure can be applied.

[0251] On the other hand, Figure 4 shows Figures 2 to 3b the equivalent circuit diagram of the antenna unit.

[0252] That is, the antenna unit 500 may include: a first inner antenna group 530, in which two antenna components 531 are arranged in parallel; a second inner antenna group 540, in which four antenna components 541 are arranged in parallel; a side antenna group 510, in which four antenna components 511 are arranged in parallel; and four corner antenna groups 530, each composed of one antenna component 521 and arranged in parallel.

[0253] Then, when combining the respective antenna groups, the antenna unit 500 can change the parallel connection number according to the control requirement conditions of the plasma density for each region.

[0254] In addition, when forming the antenna components of each antenna group, for the efficiency of power distribution, the lengths are all the same or have a preset allowable deviation in the average length.

[0255] That is, the lengths of the antenna components 511, 521, 531, and 541 of the corner antenna group 700, the side antenna group 510, and further one or more inner antenna groups 530 and 540 preferably have an allowable deviation of 10% or less of the average length of the overall antenna components.

[0256] In particular, the allowable deviation is preferably within 5-10% of the average length of all antenna components.

[0257] Then, all the antenna components have almost the same length or a small allowable variation, and the annular angles of the side antenna group 510 and one or more inner antenna groups 530 and 540 are preferably inversely proportional to the distance to the center of the reference right-angled quadrilateral.

[0258] That is, the sizes of the annular angles of the antenna components forming the antenna group are preferably formed in the order of the first inner antenna group 530, the second inner antenna group 540, and the side antenna group 510.

[0259] Here, the length of the antenna component can be defined by the length of the portion disposed on the window 210.

[0260] That is, the length of the antenna component can be as Figure 3a shown from one end portion combined with the power supply buses 611, 612, 613 for applying RF power to the other end portion connected to the ground buses 621, 622, 623 as Figure 3b shown.

[0261] On the other hand, the antenna unit 500 is a plate member in the form of a plate as the antenna component constituting each antenna group. As Figure 5a and Figure 5b shown, in order to minimize the distance from an adjacent antenna component and increase the intensity of the induced electric field, it is preferable that the portions with a small width are vertically arranged.

[0262] That is, the antenna components constituting each antenna group are formed integrally as plate members having a right-angled quadrilateral shape in a vertical cross-section or by welding a plurality of plate members. As Figure 5a and Figure 5b shown, it is preferable that the portions with a small width are vertically arranged.

[0263] On the other hand, regarding the structure of the corner antenna group described with reference to Figure 5b , Figures 7 to 9 , as long as the density of the plasma in the corner portion is not reduced in the inductively coupled plasma processing apparatus and the plasma can be controlled and the uniformity of the substrate processing can be significantly improved, regardless of the remaining structure, it can of course be applied.

[0264] In addition, in the embodiment of the side antenna group 510 arranged at an interval from the sides of the reference right-angled quadrilateral region and the four corner antenna groups 700, in addition to the structure of the corner antenna group proposed by Figure 5b , Figures 7 to 9 , it can also be applied to, for example, a corner antenna group in which the heights of the antenna components provided for the window 210 are all the same, as long as it has a structure of the four corner antenna groups 700 that can be independently controlled. Figure 5a

[0265] The above is only a part of the description related to the preferred embodiments that can be realized by the present invention. As is well known, the scope of the present invention is not limited to the above embodiments for interpretation, and all of the ideas of the present invention described above and its fundamental technical ideas are included in the scope of the present invention.

Claims

1. An inductively coupled plasma processing device, comprising: The chamber body (100) has a rectangular quadrilateral shape in plan view and has an opening formed on the upper side; A window assembly (200) comprising one or more windows (210) and a support frame (220), wherein the one or more windows (210) cover the opening to form a processing space (S) together with the chamber body (100), and the support frame (220) supports the window (210); A substrate support part (300) is arranged on the chamber body (100) and supports a rectangular quadrilateral substrate (10); a gas injection unit for injecting gas into the processing space (S); an antenna portion (500) disposed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) in the upper portion of the window assembly (200) to form an induced electric field in the processing space (S); Wherein, the antenna unit (500) comprises: Four corner antenna groups (700) are arranged adjacent to the vertices of the reference rectangular quadrilateral region to control the plasma density of the corner portions; The side antenna group (510) is arranged at intervals from the sides of the reference rectangular quadrilateral area and the four corner antenna groups (700). When looking down at the side antenna group (510) from above, The right-angled quadrilateral of the substrate (10) has one or more straight line portions in the sides other than the vertices, and has one or more lateral oblique line portions in the portion facing the corner portion. The corner antenna group (700) has a corner oblique line portion in a portion adjacent to the side antenna group (510) which is parallel to the side oblique line portion of the side antenna group (510). The directions of current flow in the corner oblique line portion and the side oblique line portion are the same.

2. The inductively coupled plasma processing apparatus according to claim 1, wherein: The side antenna group (510) includes more than one side antenna component (511), The one or more side antenna components (511) are arranged at intervals from the sides of the reference rectangular quadrilateral area, and one end (511a) is connected to an RF power source (160) and the other end (511b) is grounded.

3. The inductively coupled plasma processing apparatus according to claim 1, wherein: The corner ring structure of the corner antenna group (700) has a spiral-shaped multiple ring structure.

4. The inductively coupled plasma processing apparatus according to claim 3, wherein: The side ring structure of the side antenna group (510) has a multiple ring structure. A first distance (D1) between adjacent straight line portions of the side antenna group (510) is greater than a second distance (D2) between a side oblique line portion of the side antenna group (510) and the corner antenna group (700).

5. The inductively coupled plasma processing apparatus according to claim 3, characterized in that: When viewed from above, the oblique corner portion of the corner antenna group (700) includes the vertex of the substrate (10) or is arranged on a more inner side than the vertex of the substrate (10).

6. The inductively coupled plasma processing apparatus according to any one of claims 1 to 5, characterized in that: The support frame (220) is formed with a plurality of setting openings (221); The plurality of setting openings (221) are respectively provided with the windows (210), and the windows (210) have a shape corresponding to a planar shape of the setting openings (221).

7. The inductively coupled plasma processing apparatus according to claim 6, wherein: In order to arrange the plurality of windows (210) in an m×n arrangement in the horizontal and vertical directions, the support frame (220) is formed with the plurality of setting openings (221) in a grid structure, wherein m and n are natural numbers greater than 2.

8. The inductively coupled plasma processing apparatus according to claim 7, characterized in that: The corner antenna group (700) is arranged to overlap with a vertex arrangement opening (221) including a position of a vertex of the reference rectangular quadrilateral region among the plurality of arrangement openings (221).

9. The inductively coupled plasma processing apparatus according to claim 8, wherein: A portion of the side antenna group (510) is arranged to overlap with the vertex setting opening (221).

10. The inductively coupled plasma processing apparatus according to claim 9, wherein: The antenna unit (500) further includes one or more inner antenna groups (530, 540), The one or more inner antenna groups (530, 540) are located inside the side antenna group (510) and are concentric with the side antenna group (510); A portion of the inner antenna group (530, 540) is arranged to overlap with the vertex setting opening (221).

11. The inductively coupled plasma processing apparatus according to any one of claims 1 to 5, characterized in that: The antenna unit (500) further includes one or more inner antenna groups (530, 540), The one or more inner antenna groups (530, 540) are located inside the side antenna group (510) and are concentric with the side antenna group (510); The inner antenna group (530) comprises: A first inner antenna group (530) is located at the center of the reference right-angled quadrilateral area; One or more second inner antenna groups (540) are arranged between the first inner antenna group (530) and the side antenna group (510), and are concentric with the first inner antenna group (530).

12. The inductively coupled plasma processing apparatus according to claim 11, wherein: The corner antenna group (700) and the side antenna group (510) are connected to a variable capacitor for impedance adjustment and are grounded.

13. The inductively coupled plasma processing apparatus according to claim 11, wherein: The lengths of the antenna components constituting the corner antenna group (700), the side antenna group (510) and one or more inner antenna groups (530, 540) have a deviation of less than 10% of the average length of all antenna components.

14. The inductively coupled plasma processing apparatus according to claim 11, wherein: The circular angles of the side antenna group (510) and the one or more inner antenna groups (530, 540) are inversely proportional to the distances from the center of the reference right-angled quadrilateral.

15. An inductively coupled plasma processing apparatus, comprising: The chamber body (100) has a rectangular quadrilateral shape in plan view and has an opening formed on the upper side; A window assembly (200) comprising one or more windows (210) and a support frame (220), wherein the one or more windows (210) cover the opening to form a processing space (S) together with the chamber body (100), and the support frame (220) supports the window (210); A substrate support portion (300) is arranged on the chamber body (100) to support a rectangular quadrilateral substrate (10); a gas injection unit for injecting gas into the processing space (S); an antenna portion (500) disposed in a reference rectangular region corresponding to the rectangular shape of the substrate (10) in the upper portion of the window assembly (200) to form an induced electric field in the processing space (S); Wherein, the antenna unit (500) comprises: Four corner antenna groups (700) are arranged adjacent to the vertices of the reference right-angled quadrilateral region to control the plasma density of the corner portion and have a vortex-shaped corner ring structure; and The side antenna group (510) is arranged at intervals from the sides of the reference rectangular quadrilateral area and the four corner antenna groups (700). Wherein, each of the corner antenna groups (700) comprises: A plurality of first corner antenna components (711, 712, 713) are arranged at a first height (H1) from the top of the window (210) to the top, and are arranged at intervals from the center of the reference right-angled quadrilateral area to the vertex direction, and the current directions are the same; A plurality of second corner antenna components (731, 732) are arranged at a second height (H2) different from the first height (H1) from the window (210), and are arranged at intervals from the first corner antenna components (711, 712, 713) toward the vertex, and current flows in a direction opposite to the current direction of the first corner antenna components (711, 712, 713). When looking down at the side antenna group (510) from above, The right-angled quadrilateral of the substrate (10) has one or more straight line portions in the sides other than the vertices, and has one or more lateral oblique line portions in the portion facing the corner portion. The directions of currents in the first corner antenna elements (711, 712, 713) and the side oblique line portions are the same.

16. The inductively coupled plasma processing apparatus according to claim 15, wherein: The corner antenna group (700) comprises: A first connecting antenna component (721, 723) connected to the other end of each of the first corner antenna components (711, 712, 713) and one end of each of the second corner antenna components (731, 732); The second connecting antenna component (722, 724) connects the other end of each of the second corner antenna components (731, 732) and one end of each of the first corner antenna components (711, 712, 713).

17. The inductively coupled plasma processing apparatus according to claim 16, wherein: The first connecting antenna component (721, 723) and the second connecting antenna component (722, 724) are formed with a plurality of coupling parts (791) spaced apart by a predetermined interval so as to change the coupling height of the coupled first corner antenna component (711, 712, 713) and the second corner antenna component (731, 732).

18. The inductively coupled plasma processing apparatus according to claim 16, wherein: The first corner antenna component (711, 712, 713) has a pair of first end portions (712a, 713a, 711b, 712b, 713b), and the pair of first end portions (712a, 713a, 711b, 712b, 713b) are respectively connected to the first connection antenna component (721, 723) and the second connection antenna component (722, 724); The second corner antenna component (731, 732) has a pair of second end portions (731a, 732a, 731b, 732b), and the pair of second end portions (731a, 732a, 731b, 732b) are respectively connected to the first connection antenna component (721, 723) and the second connection antenna component (722, 724).

19. The inductively coupled plasma processing apparatus according to claim 16, wherein: The first connection antenna component (721, 723) and the second connection antenna component (722, 724) extend vertically from the upper surface of the window (210) toward the upper side.

20. The inductively coupled plasma processing apparatus according to claim 16, wherein: The first connection antenna component (721, 723) and the second connection antenna component (722, 724) extend obliquely upward from the top of the window (210).

21. The inductively coupled plasma processing apparatus according to claim 16, wherein: The corner antenna group (700) applies RF power to one end of the first corner antenna component (711) located at the outermost side relative to the center of the ring structure among the first corner antenna components (711, 712, 713), and directly or indirectly grounds the other end of the first corner antenna component (713) located at the innermost side.

22. The inductively coupled plasma processing apparatus according to claim 15, wherein: The corner antenna group (700) is arranged at the same height as the side antenna group (510) from above the window (210) in a portion adjacent to the side antenna group (510).

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