Array substrate, preparation method thereof and display panel

Abstract

The application discloses an array substrate and a preparation method and a display panel thereof, and the preparation method comprises the following steps: providing a glass substrate; forming a gate metal layer on the glass substrate, and the glass substrate and the gate metal layer are distributed with a plurality of oxygen-containing groups, and the structural general formula of the oxygen-containing groups is "-O-"; forming a gate insulating layer on the gate metal layer, and the oxygen-containing groups are combined with silicon atoms in the gate insulating layer to form siloxane groups through chemical bonds. Through surface treatment of the glass substrate and the gate metal layer, the oxygen-containing groups are combined with the silicon atoms in the gate insulating layer to form the siloxane groups through the chemical bonds, and the adhesion between the gate insulating layer and the gate metal layer and the glass substrate can be enhanced by the chemical bond effect, so that the problem that the gate insulating layer is peeled off due to poor adhesion when a pulling force test is performed is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an array substrate, a preparation method thereof and a display panel. BACKGROUND

[0002] In recent years, the super-narrow frame display has been paid more and more attention. Although the market gradually increases the quality requirements for the super-narrow frame display, the problem of low adhesion force has not been fully solved. The arrangement of the metal lines in the edge region of the super-narrow frame display is more dense than that of the common display, which will cause the gate insulating layer in the edge region to be more in contact with the gate metal layer. Since the contact between the gate insulating layer and the gate metal layer is intermolecular force, the contact between the gate insulating layer and the glass substrate is chemical bond, therefore, the adhesion force between the gate insulating layer and the glass substrate is stronger. When the super-narrow frame display is subjected to the adhesion force test, the problem of adhesion force caused by the peeling of the gate insulating layer often occurs. SUMMARY

[0003] The present application provides an array substrate, a preparation method thereof and a display panel, so as to solve the technical problem of the peeling of the gate insulating layer in the existing array substrate when subjected to the adhesion force test.

[0004] To solve the above problem, the technical solution provided by the present application is as follows:

[0005] The present application provides a preparation method of an array substrate, comprising the following steps:

[0006] providing a glass substrate;

[0007] forming a gate metal layer on the glass substrate, the glass substrate and the gate metal layer are distributed with a plurality of oxygen-containing groups, the structure general formula of the oxygen-containing group is "-O-"; and

[0008] forming a gate insulating layer on the gate metal layer, the oxygen-containing group and the silicon atom in the gate insulating layer are combined by chemical bond to form a silicon-oxygen group.

[0009] According to the preparation method of the array substrate provided by the present application, the step of forming the gate metal layer on the glass substrate comprises:

[0010] dissolving at least one oxygen-containing compound in a water washing reagent; and

[0011] using the water washing reagent to water wash and clean the glass substrate and the gate metal layer, so as to form a plurality of oxygen-containing groups on the surface of the gate metal layer and the glass substrate.

[0012] The method for preparing the array substrate provided by the present application, the step of forming the gate insulating layer on the gate metal layer comprises:

[0013] providing an inorganic solution;

[0014] forming the inorganic solution on the surface of the glass substrate and the gate metal layer;

[0015] heating the array substrate, the ring-opening reaction of the oxygen-containing compound is carried out to obtain a plurality of the oxygen-containing groups, and the oxygen-containing groups and the silicon atoms in the gate insulating layer are combined by chemical bonds to form siloxane groups; and

[0016] cooling to room temperature to obtain the gate insulating layer.

[0017] The method for preparing the array substrate provided by the present application, after the step of providing the inorganic solution, the method further comprises:

[0018] dissolving at least one of the oxygen-containing compounds in the inorganic solution and stirring uniformly.

[0019] The method for preparing the array substrate provided by the present application, the oxygen-containing compound comprises one of an epoxy compound and a furan compound.

[0020] The method for preparing the array substrate provided by the present application, the mass fraction of the oxygen-containing groups in the oxygen-containing compound ranges from 2.5% to 3%.

[0021] The method for preparing the array substrate provided by the present application, before the step of forming the gate metal layer, the method further comprises:

[0022] cleaning the glass substrate by using an ozone cleaning machine to form a plurality of the oxygen-containing groups on the surface of the glass substrate;

[0023] wherein, when the gate insulating layer is formed, the oxygen-containing groups and the silicon atoms in the gate insulating layer are combined by chemical bonds to form siloxane groups.

[0024] The method for preparing the array substrate provided by the present application, the method further comprises:

[0025] forming a semiconductor layer on the gate insulating layer; and

[0026] forming a source-drain metal layer on the semiconductor layer.

[0027] The present application provides an array substrate prepared by using the above preparation method; the array substrate comprises:

[0028] a glass substrate;

[0029] a gate metal layer disposed on the glass substrate; and

[0030] a gate insulating layer covering the glass substrate and the gate metal layer, the glass substrate and the gate metal layer being distributed with a plurality of oxygen-containing groups, the oxygen-containing groups having a general structure of "-O-", and the oxygen-containing groups being combined with silicon atoms in the gate insulating layer by chemical bonds to form siloxane groups.

[0031] The present application provides a display panel comprising the array substrate.

[0032] a color film substrate disposed opposite to the array substrate; and

[0033] a liquid crystal layer disposed between the array substrate and the color film substrate.

[0034] The array substrate and the preparation method thereof provided by the present application have the following beneficial effects: the glass substrate and the gate metal layer are surface treated, and the surfaces thereof are distributed with a plurality of oxygen-containing groups having a general structure of "-O-". When the gate metal layer is prepared, the oxygen-containing groups are combined with silicon atoms in the gate insulating layer by chemical bonds to form siloxane groups. Compared with the contact between the gate insulating layer and the gate metal layer in the prior art which belongs to intermolecular forces, the adhesion between the gate insulating layer and the gate metal layer and the glass substrate is enhanced by the chemical bond action, so that the problem of peeling of the gate insulating layer caused by poor adhesion during the pull-off force test is improved. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0036] Figure 1 is a flowchart of a preparation method of an array substrate provided by an embodiment of the present application;

[0037] Figures 2A-2F is a flowchart of a preparation method of an array substrate provided by an embodiment of the present application;

[0038] Figure 3 is a flowchart of step S20 in the preparation method provided by an embodiment of the present application;

[0039] Figure 4 is a flowchart of step S30 in the preparation method provided by an embodiment of the present application.

[0040] Reference numerals:

[0041] 11 glass substrate; 12 gate metal layer; 13 gate insulating layer; 14 oxygen-containing group; 15 semiconductor layer; 16 source-drain metal layer. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the orientation words such as "upper" and "lower" generally refer to the upper and lower of the device in the actual use or working state, and specifically refer to the direction of the drawing surface in the drawings; and "inner" and "outer" refer to the outline of the device.

[0043] As described in the background, for an ultra-narrow frame display, the metal lines located in the edge region are arranged more densely, which can cause the gate insulating layer in the edge region to be in more contact with the gate metal layer. Since the contact between the gate insulating layer and the gate metal layer is intermolecular force, the contact between the gate insulating layer and the glass substrate is chemical bond, and therefore the adhesion between the gate insulating layer and the glass substrate is stronger. When the ultra-narrow frame display is subjected to a pull test adhesion, the adhesion problem caused by peeling of the gate insulating layer often occurs.

[0044] Therefore, the embodiments of the present application improve the poor adhesion between the gate insulating layer and the gate metal layer, and the preparation method provided by the embodiments of the present application will be described in detail below.

[0045] Please refer to Figure 1 and Figures 2A-2F , Figure 1 is a flowchart of a preparation method of an array substrate provided by the embodiments of the present application, Figures 2A-2F is a flowchart of a preparation method of an array substrate provided by the embodiments of the present application; the embodiments of the present application provide a preparation method of an array substrate, which specifically includes the following steps:

[0046] Step S10: providing a glass substrate 11;

[0047] Step S20: forming a gate metal layer 12 on the glass substrate 11, the glass substrate 11 and the gate metal layer 12 are distributed with a plurality of oxygen-containing groups 14 on the surfaces, and the structure general formula of the oxygen-containing groups 14 is "-O-"; and

[0048] Step S30: forming a gate insulating layer 13 on the gate metal layer 12, and the oxygen-containing group 14 and silicon atoms in the gate insulating layer 13 are combined by chemical bonds to form a silicon-oxygen group.

[0049] It can be understood that the preparation method provided by the embodiment of the present application can enhance the adhesion between the gate insulating layer 13 and the gate metal layer 12 and the glass substrate 11 by using the chemical bond action, thereby improving the problem of peeling of the gate insulating layer 13 caused by poor adhesion during the pull-off test.

[0050] Specifically, the material of the gate insulating layer 13 is an inorganic material, and the inorganic material includes one or a combination of more than one of silicon nitride, silicon oxide, and silicon oxynitride. Optionally, both ends of the oxygen-containing group "-O-" are combined with silicon atoms in the gate insulating layer 13 by chemical bonds to form a silicon-oxygen group, or one end of the oxygen-containing group "-O-" is combined with a silicon atom in the gate insulating layer 13 by a chemical bond to form a silicon-oxygen group, and the other end is combined with a hydrogen atom in the gate insulating layer 13 by a chemical bond to form a hydroxyl group.

[0051] Specifically, please refer to Figure 3 , Figure 3 is a flowchart of step S20 in the preparation method provided by the embodiment of the present application. The step of forming the gate metal layer 12 on the glass substrate 11 includes:

[0052] Step S201: dissolving at least one oxygen-containing compound in a water washing reagent; and

[0053] Step S202: using the water washing reagent to wash and clean the glass substrate 11 and the gate metal layer 12, and forming a plurality of oxygen-containing groups 14 on the surfaces of the gate metal layer 12 and the glass substrate 11.

[0054] It can be understood that the entire surface of the glass substrate 11 and the gate metal layer 12 is washed to remove impurities attached to the surface.

[0055] Optionally, the oxygen-containing compound includes one of an epoxy compound and a furan compound. Optionally, the epoxy compound includes a polyatomic ring, and the polyatomic ring includes a four-membered ring and a five-membered ring.

[0056] Specifically, the mass fraction of the oxygen-containing group 14 in the oxygen-containing compound ranges from 2.5% to 3%, so as to decompose enough oxygen-containing groups 14, thereby ensuring that the number of formed siloxyl groups is enough, and the adhesion between the gate insulating layer 13 and the gate metal layer 12 and the glass substrate 11 is large enough and not easy to be peeled off.

[0057] Specifically, referring to Figure 4 , Figure 4 is a flow chart of step S30 in the preparation method provided by the embodiment of the present application. The step S30 of forming the gate insulating layer 13 on the gate metal layer 12 comprises:

[0058] Step S301: providing an inorganic solution;

[0059] Step S302: forming the inorganic solution on the surface of the glass substrate 11 and the gate metal layer 12;

[0060] Step S303: heating the array substrate, and the oxygen-containing compound undergoes ring-opening reaction to obtain a plurality of oxygen-containing groups 14, and the oxygen-containing groups 14 and silicon atoms in the gate insulating layer 13 are combined by chemical bonds to form siloxyl groups; and

[0061] Step S304: cooling to room temperature to obtain the gate insulating layer 13.

[0062] Specifically, after the step of providing an inorganic solution, the preparation method further comprises:

[0063] dissolving at least one oxygen-containing compound in the inorganic solution and stirring uniformly.

[0064] Further, before forming the gate metal layer 12, the surface of the glass substrate 11 can also be treated to form a plurality of oxygen-containing groups 14 on the surface of the glass substrate 11, and the oxygen-containing groups 14 and silicon atoms in the gate insulating layer 13 are combined by chemical bonds to form siloxyl groups, which can further enhance the adhesion between the gate insulating layer 13 and the glass substrate 11.

[0065] Specifically, referring to Figure 2F , before the step of forming the gate metal layer 12, the preparation method further comprises:

[0066] cleaning the glass substrate 11 by using an ozone cleaning machine to form a plurality of oxygen-containing groups 14 on the surface of the glass substrate 11.

[0067] Wherein, when forming the gate insulating layer 13, the oxygen-containing groups 14 and silicon atoms in the gate insulating layer 13 are combined by chemical bonds to form siloxane groups.

[0068] It should be noted that the ozone cleaning machine can better oxidize and clean the organic and inorganic impurities on the surface of the glass substrate 11 to remove the surface impurities.

[0069] Further, referring to Figure 2E , the preparation method further comprises:

[0070] forming a semiconductor layer 15 on the gate insulating layer 13; and

[0071] forming a source-drain metal layer 16 on the semiconductor layer 15.

[0072] Of course, the array substrate further comprises other film layer structures, and the preparation method of the other film layer structures is consistent with the prior art, so it is not described in detail here.

[0073] In addition, the inventor has also experimentally verified the technical solutions provided by the embodiments of the present application, and the experimental results show that, compared with the prior art, the taper angle fracture rate at the junction between the gate insulating layer 13, the gate metal layer 12 and the glass substrate 11 is greatly reduced, which is beneficial to improve the yield and reduce the production cost.

[0074] Please refer to Figure 2E , the present application also provides an array substrate prepared by the preparation method of the above embodiments. The array substrate comprises a glass substrate 11, a gate metal layer 12 and a gate insulating layer 13, the gate metal layer 12 covers the glass substrate 11 and the gate metal layer 12, the glass substrate 11 and the gate metal layer 12 are distributed with a plurality of oxygen-containing groups 14, the structure of the oxygen-containing group 14 is "-O-", and the oxygen-containing group 14 and the silicon atoms in the gate insulating layer 13 are combined by chemical bonds to form siloxane groups.

[0075] Further, the array substrate further comprises a semiconductor layer 15 and a source-drain metal layer 16, the semiconductor layer 15 is arranged on the gate insulating layer 13, and the source-drain metal layer 16 is arranged on the semiconductor layer 15.

[0076] The embodiment of the present application further provides a display panel, the display panel comprising the array substrate in the above embodiment, the display panel can be a liquid crystal display panel, the display panel further comprises a color filter substrate and a liquid crystal layer, the color filter substrate is arranged opposite to the array substrate, the liquid crystal layer is arranged between the array substrate and the color filter substrate, the liquid crystal layer comprises a plurality of liquid crystal molecules, the display panel realizes picture display by controlling the deflection of the liquid crystal molecules.

[0077] The beneficial effect is that the array substrate and the preparation method thereof provided by the present application, by surface treatment of the glass substrate and the gate metal layer, a plurality of oxygen-containing groups are distributed on the surface, the structural general formula of the oxygen-containing group is "-O-", when the gate metal layer is prepared and formed, the oxygen-containing group and the silicon atom in the gate insulating layer are combined by chemical bond to form a silicon-oxygen group, compared with the contact between the gate insulating layer and the gate metal layer in the prior art which belongs to intermolecular force, the adhesion between the gate insulating layer and the gate metal layer and the glass substrate can be enhanced by using this chemical bond effect, thereby improving the problem of peeling of the gate insulating layer caused by poor adhesion when the pull-off force test is performed.

[0078] In summary, although the present application has been disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application, and those skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present application, therefore the protection scope of the present application is subject to the scope defined by the claims.

Claims

1. A method for manufacturing an array substrate, characterized by, The method comprises the following steps: providing a glass substrate; forming a gate metal layer on the glass substrate, the glass substrate and the gate metal layer being distributed with a plurality of oxygen-containing groups having a general structure of "-O-"; forming a gate insulating layer on the gate metal layer, the oxygen-containing groups being chemically bonded with silicon atoms in the gate insulating layer to form siloxane groups; and wherein the step of forming the gate insulating layer on the gate metal layer comprises: providing an inorganic solution; forming the inorganic solution on the surface of the glass substrate and the gate metal layer; heating the array substrate, so that the oxygen-containing compounds in the inorganic solution undergo ring-opening reaction to obtain a plurality of the oxygen-containing groups, which are chemically bonded with silicon atoms in the gate insulating layer to form siloxane groups; and cooling to room temperature to obtain the gate insulating layer. The step of forming the gate metal layer on the glass substrate comprises:

2. The method of manufacturing an array substrate according to claim 1, wherein dissolving at least one oxygen-containing compound in a water washing agent; and using the water washing agent to wash and clean the glass substrate and the gate metal layer, so as to form a plurality of the oxygen-containing groups on the surface of the gate metal layer and the glass substrate. After the step of providing the inorganic solution, the preparation method further comprises:

3. The method of manufacturing an array substrate according to claim 2, wherein dissolving at least one of the oxygen-containing compounds in the inorganic solution and stirring uniformly. The oxygen-containing compound comprises one of an epoxy compound and a furan compound.

4. The method of manufacturing an array substrate according to claim 2 or 3, wherein The mass fraction of the oxygen-containing groups in the oxygen-containing compound ranges from 2.5% to 3%.

5. The method of manufacturing an array substrate according to claim 4, wherein Before the step of forming the gate metal layer, the preparation method further comprises:

6. The method of manufacturing an array substrate according to claim 1, wherein using an ozone cleaning machine to clean the glass substrate, so as to form a plurality of the oxygen-containing groups on the surface of the glass substrate; wherein, when the gate insulating layer is formed, the oxygen-containing groups are chemically bonded with silicon atoms in the gate insulating layer to form siloxane groups. The preparation method further comprises:

7. The method of manufacturing an array substrate according to claim 1, wherein forming a semiconductor layer on the gate insulating layer; and forming a source-drain metal layer on the semiconductor layer. The array substrate comprises:

8. An array substrate prepared by the method according to any one of claims 1 to 7. a glass substrate; a gate metal layer arranged on the glass substrate; and a gate insulating layer covering the glass substrate and the gate metal layer, the glass substrate and the gate metal layer being distributed with a plurality of oxygen-containing groups having a general structure of "-O-", the oxygen-containing groups being chemically bonded with silicon atoms in the gate insulating layer to form siloxane groups. The array substrate comprises the array substrate of claim 8; 9. A display panel, characterized by, a color filter substrate arranged opposite to the array substrate; and a liquid crystal layer arranged between the array substrate and the color filter substrate. ​ ​

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