Temperature measurement method and device for epitaxial wafer in and outside reaction cavity, electronic equipment and storage medium

Abstract

The application relates to the technical field of semiconductor manufacturing, and particularly discloses a method and device for measuring the temperature of an epitaxial wafer in a reaction cavity, an electronic device and a storage medium; the method comprises the following steps: placing a thermocouple temperature meter on a substrate tray in the reaction cavity together with an epitaxial wafer, and placing a tungsten-rhenium thermocouple in the reaction cavity; obtaining the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple temperature meter in a preset first heating temperature range, that is, obtaining the conversion relationship between the tungsten-rhenium thermocouple and the actual temperature of the epitaxial wafer; in an epitaxial reaction process, the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring equipment is obtained according to the temperature measured by the tungsten-rhenium thermocouple and the temperature measuring probe and the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple temperature meter; in an actual reaction, the actual temperature of the epitaxial wafer can be obtained according to the temperature measured by the temperature measuring probe; the method is simple and practical, and the actual temperature of the epitaxial wafer can be directly obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to an epitaxial wafer temperature measurement method and device in a reaction chamber, an electronic device and a storage medium. BACKGROUND

[0002] In the epitaxial process of the third generation semiconductor, a thin film material is uniformly grown on a substrate in a vacuum high-temperature environment. During the process, the overall temperature of the epitaxial wafer has a great influence on the quality of the final product.

[0003] Since the reaction temperature of the existing epitaxial furnace is very high, in order to avoid the influence of the temperature measurement structure on the temperature field in the reaction chamber, the temperature measurement probe is generally arranged outside the reaction chamber. The existing method is to directly measure the temperature of the graphite part of the reaction chamber by the temperature measurement probe and regard it as the temperature of the epitaxial wafer in the reaction chamber. However, in fact, the temperature is not the temperature of the epitaxial wafer in the reaction chamber.

[0004] At present, there is no effective technical solution to the above problems. SUMMARY

[0005] The present application aims to provide an epitaxial wafer temperature measurement method and device in a reaction chamber, an electronic device and a storage medium, which can effectively solve the problem of inaccurate epitaxial wafer temperature measurement by using an epitaxial temperature measurement probe in the existing epitaxial process.

[0006] In a first aspect, the present application provides an epitaxial wafer temperature measurement method in a reaction chamber, which comprises the following steps:

[0007] A tungsten-rhenium thermocouple and a thermocouple thermometer are arranged in the reaction chamber and on a substrate tray of the reaction chamber respectively, and are used to obtain first temperature information and second temperature information respectively;

[0008] The reaction chamber is heated;

[0009] A first temperature transformation relationship of the first temperature information and the second temperature information in a preset first heating temperature range is obtained;

[0010] The thermocouple thermometer is removed;

[0011] The reaction chamber is heated, and third temperature information is obtained by a temperature measurement probe of an epitaxial device;

[0012] The first temperature information and the third temperature information in a preset second heating temperature range are obtained, the maximum temperature of the second heating temperature range is greater than the maximum temperature of the first heating temperature range, and the reaction temperature of the epitaxial device is greater than the maximum temperature of the first heating temperature range and is in the second heating temperature range;

[0013] According to the first temperature information and the third temperature information in the preset second heating temperature range, and the first temperature conversion relationship, the second temperature conversion relationship of the third temperature information and the second temperature information is obtained.

[0014] In the epitaxial reaction process, the temperature information of the epitaxial wafer is obtained according to the second temperature conversion relationship and the third temperature information actually measured by the temperature measuring probe.

[0015] The epitaxial wafer temperature measuring method in the reaction cavity of the application first places the thermocouple thermometer in the reaction cavity as the epitaxial wafer on the substrate tray in the reaction cavity, and also places the tungsten-rhenium thermocouple in the reaction cavity and contacts the thermocouple thermometer, so as to obtain the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple thermometer, that is, the conversion relationship between the tungsten-rhenium thermocouple and the actual temperature of the epitaxial wafer; then, in the actual reaction temperature environment of the epitaxial wafer, the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device is obtained according to the temperature measured by the tungsten-rhenium thermocouple and the temperature measuring probe and the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple thermometer, so that in the actual reaction, only the temperature measured by the temperature measuring probe needs to be obtained and substituted into the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device, and the actual temperature of the epitaxial wafer can be obtained. The method is simple and practical, and the actual temperature of the epitaxial wafer can be directly obtained.

[0016] Optionally, the epitaxial wafer temperature measuring method in the reaction cavity of the application, the size of the thermocouple thermometer is the same as the size of the epitaxial wafer processed by the epitaxial device.

[0017] The application places the thermocouple thermometer with the same size as the epitaxial wafer processed by the epitaxial device on the substrate tray of the reaction cavity, so that the temperature measured by the thermocouple thermometer is closer to the actual temperature of the epitaxial wafer, and the accuracy of the first temperature conversion relationship is ensured, thereby avoiding errors caused by the difference in size between the thermocouple thermometer and the epitaxial wafer when the thermocouple thermometer simulates the overall temperature of the epitaxial wafer on the substrate tray in the reaction cavity.

[0018] Optionally, the epitaxial wafer temperature measuring method in the reaction cavity of the application, the step of obtaining the first temperature conversion relationship of the first temperature information and the second temperature information in the preset first heating temperature range comprises:

[0019] A plurality of groups of first temperature information and second temperature information in the first heating temperature range are obtained, and the first temperature conversion relationship is obtained according to the plurality of groups of first temperature information and second temperature information in the first heating temperature range.

[0020] The application fits the parameters in the first temperature conversion relationship according to the plurality of groups of first temperature information and second temperature information in the first heating temperature range.

[0021] Optionally, in the wafer temperature measuring method in the reaction chamber of the application, the first temperature conversion relationship is a first order function.

[0022] Optionally, in the wafer temperature measuring method in the reaction chamber of the application, the second temperature conversion relationship is a third order function.

[0023] Optionally, in the wafer temperature measuring method in the reaction chamber of the application, the preset first heating temperature range is 125-1200℃.

[0024] In a second aspect, the application further provides another wafer temperature measuring method in a reaction chamber, which is applied to an epitaxial device, and the method comprises:

[0025] acquiring third temperature information based on the actual measurement of the temperature measuring probe;

[0026] acquiring the temperature information of the wafer according to the third temperature information and a preset second temperature conversion relationship;

[0027] The preset second temperature conversion relationship is obtained by the following steps:

[0028] placing a tungsten-rhenium thermocouple and a thermocouple thermometer in the reaction chamber and on the substrate tray of the reaction chamber respectively, and respectively acquiring the first temperature information and the second temperature information;

[0029] heating the reaction chamber;

[0030] acquiring a first temperature conversion relationship of the first temperature information and the second temperature information in a preset first heating temperature range;

[0031] removing the thermocouple thermometer;

[0032] heating the reaction chamber and acquiring third temperature information through the temperature measuring probe of the epitaxial device;

[0033] acquiring the first temperature information and the third temperature information in a preset second heating temperature range, the highest temperature of the second heating temperature range is higher than the highest temperature of the first heating temperature range, and the reaction temperature of the epitaxial device is higher than the highest temperature of the first heating temperature range and is in the second heating temperature range;

[0034] acquiring a second temperature conversion relationship of the third temperature information and the second temperature information according to the first temperature information and the third temperature information in the preset second heating temperature range and the first temperature conversion relationship.

[0035] In the actual reaction process, only the actual measured temperature of the temperature measuring probe and the second temperature conversion relationship obtained by the epitaxial wafer temperature measuring method in the reaction chamber provided in the first aspect are obtained, the second temperature conversion relationship is the conversion relationship between the actual measured temperature of the temperature measuring probe and the actual temperature of the epitaxial wafer, and the actual temperature of the epitaxial wafer can be converted.

[0036] In a third aspect, the application provides an epitaxial wafer temperature measuring device in a reaction chamber, which is applied to an epitaxial device, and the steps include:

[0037] The first obtaining module is configured to obtain third temperature information based on the actual measured temperature of the temperature measuring probe.

[0038] The second obtaining module is configured to obtain temperature information of the epitaxial wafer according to the third temperature information and the preset second temperature conversion relationship.

[0039] The preset second temperature conversion relationship is obtained by the following steps:

[0040] The tungsten-rhenium thermocouple and the thermocouple thermometer are respectively placed in the reaction chamber and on the substrate tray of the reaction chamber, and are respectively used to obtain the first temperature information and the second temperature information.

[0041] The reaction chamber is heated.

[0042] The first temperature conversion relationship of the first temperature information and the second temperature information in the preset first heating temperature range is obtained.

[0043] The thermocouple thermometer is removed.

[0044] The reaction chamber is heated, and the third temperature information is obtained by the temperature measuring probe of the epitaxial device.

[0045] The first temperature information and the third temperature information in the preset second heating temperature range are obtained, the highest temperature of the second heating temperature range is greater than the highest temperature of the first heating temperature range, the reaction temperature of the epitaxial device is greater than the highest temperature of the first heating temperature range and is in the second heating temperature range.

[0046] The second temperature conversion relationship of the third temperature information and the second temperature information is obtained according to the first temperature information and the third temperature information in the preset second heating temperature range and the first temperature conversion relationship.

[0047] The epitaxial wafer temperature measuring device in the reaction chamber of the application obtains the actual temperature of the epitaxial wafer by obtaining the temperature information actually measured by the temperature measuring probe of the epitaxial device, and then obtaining the second temperature conversion relationship according to the temperature information and the second temperature conversion relationship obtained by the epitaxial wafer temperature measuring method in the reaction chamber mentioned in the first aspect.

[0048] In a fourth aspect, the present application provides an electronic device, comprising a processor and a memory, wherein the memory stores computer readable instructions, and when the computer readable instructions are executed by the processor, the steps in the method provided in the second aspect are executed.

[0049] In a fifth aspect, the present application provides a storage medium, wherein the storage medium stores a computer program, and when the computer program is executed by a processor, the steps in the method provided in the second aspect are executed.

[0050] As can be seen, the present application provides a method and device for measuring the temperature of an epitaxial wafer in a reaction chamber, an electronic device and a storage medium, wherein the thermocouple temperature gauge is used as the epitaxial wafer and placed on the substrate tray in the reaction chamber in a temperature environment measurable by the thermocouple temperature gauge, and the tungsten-rhenium thermocouple is also placed in the reaction chamber and contacts the thermocouple temperature gauge, so as to obtain the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple temperature gauge, i.e., the conversion relationship between the tungsten-rhenium thermocouple and the actual temperature of the epitaxial wafer; then, in the actual reaction temperature environment, the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device is obtained according to the temperature measured by the tungsten-rhenium thermocouple and the temperature measuring probe and the temperature conversion relationship between the tungsten-rhenium thermocouple and the thermocouple temperature gauge, so that in the actual reaction, only the temperature measured by the temperature measuring probe needs to be obtained and substituted into the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device, and the actual temperature of the epitaxial wafer can be obtained. The method is simple and practical, and the actual temperature of the epitaxial wafer can be directly obtained.

[0051] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the present application according to the embodiments. The objects and other advantages of the present application can be achieved and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0052] Figure 1 A flow chart of the method for measuring the temperature of an epitaxial wafer in a reaction chamber provided by the embodiments of the present application.

[0053] Figure 2 A structure diagram of a TC wafer provided by the embodiments of the present application.

[0054] Figure 3 A flow chart of another method for measuring the temperature of an epitaxial wafer in a reaction chamber provided by the embodiments of the present application.

[0055] Figure 4 A structure diagram of a device for measuring the temperature of an epitaxial wafer in a reaction chamber provided by the embodiments of the present application.

[0056] Figure 5This is a schematic diagram of the electronic device structure provided in an embodiment of this application.

[0057] Reference numerals: 1. TC Wafer; 2. Temperature sensing lead; 401. First acquisition module; 402. Second acquisition module; 51. Processor; 52. Memory; 53. Communication bus. Detailed Implementation

[0058] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0059] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0060] Firstly, such as Figure 1 As shown, this application provides some embodiments of a method for measuring the temperature of epitaxial wafers inside and outside the reaction chamber, applied to epitaxial equipment. The method includes the following steps:

[0061] A1. Place the tungsten-rhenium thermocouple and the thermocouple thermometer in the reaction chamber and on the substrate tray of the reaction chamber, respectively, to obtain the first temperature information and the second temperature information;

[0062] A2. Heating the reaction chamber;

[0063] A3. Obtain the first temperature transformation relationship between the first temperature information and the second temperature information within a preset first heating temperature range;

[0064] A4. Remove the thermocouple thermometer;

[0065] A5. The reaction chamber is heated, and the third temperature information is obtained through the temperature probe of the epitaxial device;

[0066] A6. obtaining the first temperature information and the third temperature information in a preset second heating temperature range, the highest temperature of the second heating temperature range being higher than the highest temperature of the first heating temperature range, the reaction temperature of the epitaxial device being higher than the highest temperature of the first heating temperature range and being in the second heating temperature range;

[0067] A7. obtaining the second temperature transformation relationship of the third temperature information and the second temperature information according to the first temperature information and the third temperature information in the preset second heating temperature range and the first temperature transformation relationship;

[0068] A8. obtaining the temperature information of the epitaxial wafer according to the second temperature transformation relationship and the third temperature information actually measured by the temperature measuring probe during the epitaxial reaction process.

[0069] Specifically, in the step A1, the thermocouple thermometer is TC Wafer1, the TC Wafer1 is placed on the substrate tray of the reaction chamber in the preset first heating temperature range, actually, the TC Wafer1 is used as the epitaxial wafer on the substrate tray of the reaction chamber, the temperature actually measured by the TC Wafer1 is equivalent to the temperature of the epitaxial wafer on the substrate tray of the reaction chamber in the preset first heating temperature range, the tungsten-rhenium thermocouple is placed in the reaction chamber, the first temperature information is the temperature measured by the tungsten-rhenium thermocouple, and the second temperature information is the temperature measured by the TC Wafer1; the TC Wafer1 is placed on the substrate tray of the reaction chamber as the epitaxial wafer because the TC Wafer1 can measure the overall temperature distribution of the epitaxial wafer in the first heating temperature range, that is, the obtained temperature is closer to the temperature of the epitaxial wafer.

[0070] Specifically, the highest temperature that can be measured by the TC Wafer1 is 1200℃, that is, the upper limit of the temperature measured by the TC Wafer1 is low, and the upper limit of the temperature measured by the tungsten-rhenium thermocouple is high, so the application combines the TC Wafer1 and the tungsten-rhenium thermocouple with a high upper limit of temperature measurement to obtain the transformation relationship.

[0071] In some specific embodiments, the substrate tray drives the TC Wafer1 to rotate during the temperature measurement process, simulating the action of the epitaxial wafer when heated in the epitaxial chamber, and improving the measurement accuracy of the TC Wafer1.

[0072] Specifically, in some other specific embodiments, the tungsten-rhenium thermocouple contacts the TC Wafer1 to measure the temperature, so that the temperature obtained by the tungsten-rhenium thermocouple is more accurate.

[0073] Specifically, in the A2-A4 steps, the reaction cavity is heated, and a first temperature conversion relationship between the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1 is obtained according to the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1, that is, the first temperature conversion relationship obtained is the conversion relationship between the temperature measured by the tungsten-rhenium thermocouple and the temperature of the epitaxial wafer in a preset first heating temperature range; after the first temperature conversion relationship is obtained, the TC Wafer 1 is removed.

[0074] In some specific embodiments, in the A3 step, the first temperature conversion relationship can be a proportional function, a monomial function, etc., and the first temperature conversion relationship of the embodiment of the present application is preferably a monomial function, because the tungsten-rhenium thermocouple and the TC Wafer 1 both measure the temperature in the reaction cavity, and the temperature changes measured by the two are basically synchronous, and the monomial function is used to fit to clearly reflect the relationship between the two, and the monomial function is simple and convenient to calculate.

[0075] Specifically, the monomial function is wherein, T is the temperature measured by the TC Wafer 1, T is the temperature measured by the tungsten-rhenium thermocouple, and k and b are parameters of the first temperature conversion relationship; in some embodiments, the A3 step of obtaining the first temperature conversion relationship of the first temperature information and the second temperature information in the preset first heating temperature range further includes: obtaining a plurality of groups of the first temperature information and the second temperature information in the first heating temperature range, and obtaining the first temperature conversion relationship according to the plurality of groups of the first temperature information and the second temperature information in the first heating temperature range.

[0076] Specifically, by obtaining a plurality of groups of the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1, the values of the fitting parameters k and b are obtained through the first temperature conversion relationship, and then a monomial function between the thermocouple thermometer and the tungsten-rhenium thermocouple is obtained, that is, a function relationship formula between the temperature measured by the tungsten-rhenium thermocouple and the actual temperature of the epitaxial wafer in the preset first heating temperature range is obtained.

[0077] Specifically, the fitting parameters k and b, that is, the monomial function, are obtained according to the above steps: Only the temperature measured by the tungsten-rhenium thermocouple is needed to obtain the temperature of the TC Wafer 1 in the reaction cavity, that is, the actual temperature of the epitaxial wafer in the preset first heating temperature range in the reaction cavity can be obtained by measuring the temperature measured by the tungsten-rhenium thermocouple.

[0078] Specifically, in the A4 and A5 steps, after the TC Wafer 1 is removed, the epitaxial wafer is placed on a substrate tray of the reaction chamber, the tungsten-rhenium thermocouple is kept in place, and the epitaxial reaction chamber is heated, and the temperature of the graphite component of the reaction chamber is measured by the temperature measuring probe of the epitaxial device, i.e., the third temperature information is the temperature of the graphite component of the reaction chamber.

[0079] Specifically, in some specific embodiments, the tungsten-rhenium thermocouple is in contact with the epitaxial wafer, so that the measured temperature value is more accurate.

[0080] Specifically, when the temperature of the epitaxial reaction chamber reaches the second heating temperature range, the temperatures measured by the tungsten-rhenium thermocouple and the temperature measuring probe at this time are obtained.

[0081] Specifically, the application obtains the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1 in the preset first heating temperature range, specifically, when the temperature of the component in the reaction chamber is in the first heating temperature range, the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1 are obtained, wherein the component in the reaction chamber can be the inner wall of the graphite component or the in-situ test reaction chamber, and the temperature of the inner wall of the graphite component is measured by the temperature measuring probe; the application preferably obtains the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1 when the temperature of the inner wall of the graphite component measured by the temperature measuring probe is in the preset first heating temperature range; wherein in the A6 step, the first temperature information and the third temperature information in the preset second heating temperature range are obtained, and the application is also preferably to obtain the first temperature information and the third temperature information when the temperature of the inner wall of the graphite component measured by the temperature measuring probe is in the preset second heating temperature range.

[0082] Specifically, the highest temperature of the second heating temperature range is greater than the highest temperature of the first heating temperature range, the reaction temperature of the epitaxial device is greater than the highest temperature of the first heating temperature range and is in the second heating temperature range, and the temperature measured by the tungsten-rhenium thermocouple and the temperature measured by the TC Wafer 1 still satisfy the first temperature conversion relationship, i.e., the temperature measured by the tungsten-rhenium thermocouple and the temperature of the epitaxial wafer still satisfy the first temperature conversion relationship, regardless of whether in the first heating temperature range or in the preset second heating temperature range.

[0083] Specifically, in the A7 step, the second temperature conversion relationship between the temperature measured by the TC Wafer 1 and the temperature measured by the temperature measuring probe can be obtained according to the temperatures measured by the tungsten-rhenium thermocouple and the temperature measuring probe in the preset second heating temperature range and the first temperature conversion relationship.

[0084] In some preferred embodiments, in the A7 step, the second temperature conversion relationship can be a piecewise function, a fitting function, a cubic function, etc., and the second temperature conversion relationship of the application is preferably a monadic cubic function.

[0085] Specifically, the monomial cubic function is is the actual temperature of the epitaxial wafer, is the temperature of the graphite measured by the temperature measuring probe in the reaction chamber, A, B, C, and D are undetermined parameters of the second temperature conversion relationship; wherein the temperature relationship between the actual temperature of the epitaxial wafer and the temperature of the graphite measured by the temperature measuring probe in the reaction chamber is set as a monomial cubic function, which can better fit the actual temperature of the epitaxial wafer and ensure the accuracy of obtaining the actual temperature of the epitaxial wafer.

[0086] Specifically, in step A7, A 、 X 3 +B 、 X 2 +C 、 X+D 、 is assigned to x, and then substituted into the first temperature conversion relationship to obtain y=k(A 、 X 3 +B 、 X 2 +C 、 X+D 、 )+b. Since the above obtained monomial linear function relationship is equal to the monomial cubic function relationship, that is, =k(A 、 X 3 +B 、 X 2 +C 、 X+D 、 )+b, according to the principle of equality of both sides of the equation, A=kA 、 , B=kB 、 , C=kC 、 , D=kD 、 +b is obtained; wherein k and b parameters are known, A, B, C, and D are undetermined parameters, only A 、 , B 、 , C 、 , D 、 need to be obtained, so that A, B, C, and D are obtained. Therefore, step A6 further comprises obtaining at least four groups of first temperature information and third temperature information in the preset second heating temperature range; obtaining the second temperature conversion relationship of the second temperature information and the third temperature information in the second heating temperature range according to the at least four groups of first temperature information and third temperature information in the preset second heating temperature range, and the first temperature conversion relationship.

[0087] Specifically, from the above y=k(A 、 X 3 +B 、 X 2 +C 、 ​X+D 、 ) + b, and the temperature measured by the at least four groups of tungsten-rhenium thermocouples and the temperature of the graphite member in the reaction chamber measured by the temperature measuring probe, and the conversion relationship fitting between the temperature measured by the tungsten-rhenium thermocouples and the temperature measured by the TC Wafer1, to obtain A 、 , B 、 , C 、 , D 、 , and then through A = kA 、 , B = kB 、 , C = kC 、 , D = kD 、 + b, the undetermined parameters A, B, C and D in the second temperature conversion relationship can be fitted, and the functional relationship between the TC Wafer and the temperature measured by the temperature measuring probe is obtained, that is, the temperature conversion relationship between the temperature measuring probe and the epitaxial wafer in the reaction chamber is obtained.

[0088] Specifically, in the A8 step, during the actual epitaxial reaction process, only the temperature of the graphite member in the reaction chamber actually measured by the temperature measuring probe is substituted into the second temperature conversion relationship, so that the actual temperature of the epitaxial wafer at this time can be obtained.

[0089] The epitaxial wafer temperature measuring method in the reaction chamber of the embodiment of the application first obtains the temperature conversion relationship between the tungsten-rhenium thermocouples and the actual temperature of the epitaxial wafer by placing the TC Wafer1 as the epitaxial wafer on the substrate tray in the reaction chamber and placing the tungsten-rhenium thermocouples in the reaction chamber under the temperature environment measurable by the TC Wafer1, that is, the temperature conversion relationship between the tungsten-rhenium thermocouples and the actual temperature of the epitaxial wafer is obtained; then the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device is fitted according to the temperature measured by the tungsten-rhenium thermocouples and the temperature measuring probe and the temperature conversion relationship between the tungsten-rhenium thermocouples and the TC Wafer1 under the actual reaction temperature environment, so that in the actual reaction, only the temperature measured by the temperature measuring probe needs to be obtained and substituted into the conversion relationship between the actual temperature of the epitaxial wafer and the temperature measured by the temperature measuring device, so that the actual temperature of the epitaxial wafer can be obtained. The method is simple and accurate, and can directly obtain the actual temperature of the epitaxial wafer.

[0090] In some preferred embodiments, the size of the thermocouple thermometer is the same as the size of the epitaxial wafer processed by the epitaxial device.

[0091] Specifically, a thermocouple temperature gauge with the same size as the epitaxial wafer processed by the epitaxial device is placed on the substrate tray of the reaction chamber, so that the temperature measured by the TC Wafer1 is closer to the actual temperature of the epitaxial wafer, ensuring the accuracy of the first temperature conversion relationship, thereby avoiding errors caused by the size difference between the TC Wafer1 and the epitaxial wafer, which simulates the overall temperature of the epitaxial wafer on the substrate tray in the reaction chamber.

[0092] In some preferred embodiments, the preset first heating temperature range is 125-1200℃.

[0093] Specifically, the highest temperature that can be measured by the TC Wafer1 is 1200℃, so the first heating temperature range is set to be suitable for the temperature value that can be measured by the TC Wafer1.

[0094] In some preferred embodiments, the preset second heating temperature range is 125-1800℃.

[0095] Specifically, the epitaxial furnace of the embodiment of the application is preferably used for silicon carbide epitaxy, because the reaction temperature of silicon carbide is about 1700℃, so the preset second heating temperature range is preferably 125-1800℃.

[0096] In some preferred embodiments, the temperature measurement lead wire of the tungsten-rhenium thermocouple of the application and the temperature measurement lead wire 2 of the TC Wafer1 are connected to the controller through a vacuum thermocouple connector.

[0097] Further, during the epitaxial reaction process, only the temperature of the graphite part of the reaction chamber measured by the temperature measurement probe is substituted into the second temperature conversion relationship obtained by the above method, and the actual temperature of the epitaxial wafer at this temperature can be obtained.

[0098] In a second aspect, as shown in Figure 3 Another epitaxial wafer temperature measurement method in a reaction chamber is provided by the embodiment of the application, which is applied to an epitaxial device, and the method comprises:

[0099] S301: obtaining third temperature information based on the actual measurement of the temperature measurement probe;

[0100] S302: obtaining temperature information of the epitaxial wafer according to the third temperature information and the preset second temperature conversion relationship;

[0101] The preset second temperature conversion relationship is obtained by the following steps:

[0102] The tungsten-rhenium thermocouple and the thermocouple temperature gauge are respectively placed in the reaction chamber and on the substrate tray of the reaction chamber, and are respectively used to obtain the first temperature information and the second temperature information;

[0103] Heating the reaction cavity;

[0104] Obtaining a first temperature conversion relationship of the first temperature information and the second temperature information in a preset first heating temperature range;

[0105] Removing the thermocouple temperature meter;

[0106] Heating the reaction cavity, and obtaining third temperature information through a temperature measuring probe of the epitaxial equipment;

[0107] Obtaining the first temperature information and the third temperature information in a preset second heating temperature range, the highest temperature of the second heating temperature range being greater than the highest temperature of the first heating temperature range, and the reaction temperature of the epitaxial equipment being greater than the highest temperature of the first heating temperature range and being in the second heating temperature range;

[0108] Obtaining a second temperature conversion relationship of the third temperature information and the second temperature information in the second heating temperature range according to the first temperature information and the third temperature information in the preset second heating temperature range, and the first temperature conversion relationship.

[0109] Specifically, the temperature measuring probe measures the temperature of the graphite part of the reaction chamber, and the third temperature information is the temperature measured by the temperature measuring probe of the epitaxial equipment, wherein the preset second temperature conversion relationship is obtained by the epitaxial wafer temperature measuring method in the reaction cavity provided in the first aspect, and the specific obtaining process is referred to the epitaxial wafer temperature measuring method in the reaction cavity provided in the first aspect.

[0110] The present application only needs to obtain the temperature measured by the temperature measuring probe of the epitaxial equipment and the second temperature conversion relationship to obtain the actual temperature of the epitaxial wafer.

[0111] The third aspect, as shown in the figure, a reaction cavity epitaxial wafer temperature measuring device provided by the present application is applied to epitaxial equipment, and the device comprises: Figure 4

[0112] The first obtaining module 401 is configured to obtain the third temperature information actually measured by the temperature measuring probe;

[0113] The second obtaining module 402 is configured to obtain the temperature information of the epitaxial wafer according to the third temperature information and the preset second temperature conversion relationship;

[0114] The preset second temperature conversion relationship is obtained by the epitaxial wafer temperature measuring method in the reaction cavity provided in the first aspect.

[0115] The reaction cavity epitaxial wafer temperature measuring device provided by the present application can obtain the actual temperature of the epitaxial wafer through the temperature measured by the temperature measuring probe of the epitaxial equipment and the second temperature conversion relationship, and the method is simple and practical.

[0116] ​Specifically, the first acquisition module 401 acquires the temperature actually acquired by the temperature measuring probe, and the second acquisition module 402 acquires the actual temperature information of the epitaxial wafer according to the temperature actually acquired by the temperature measuring probe and the preset second temperature conversion relationship.

[0117] In some preferred embodiments, the epitaxial wafer temperature measuring device in the reaction cavity provided in the third aspect is preferably used to execute the epitaxial wafer temperature measuring method in the second aspect.

[0118] In the fourth aspect, referring to Figure 5 , Figure 5 An electronic device provided by the present application is shown in the figure, which comprises a processor 51 and a memory 52. The processor 51 and the memory 52 are interconnected and communicate with each other through a communication bus 53 and / or other forms of connection mechanism (not shown). The memory 52 stores a computer program executable by the processor 51. When the electronic device is running, the processor 51 executes the computer program to execute any one of the optional implementation manners of the above-mentioned embodiments to realize the following functions: acquiring third temperature information based on the temperature actually measured by the temperature measuring probe; acquiring temperature information of the epitaxial wafer according to the third temperature information and a preset second temperature conversion relationship; the preset second temperature conversion relationship is acquired by the following steps: placing a tungsten-rhenium thermocouple and a thermocouple thermometer in the reaction cavity and on the substrate tray of the reaction cavity respectively, which are respectively used to acquire first temperature information and second temperature information; heating the reaction cavity; acquiring the first temperature conversion relationship of the first temperature information and the second temperature information in a preset first heating temperature range; removing the thermocouple thermometer; heating the reaction cavity and acquiring the third temperature information through the temperature measuring probe of the epitaxial device; acquiring the first temperature information and the third temperature information in a preset second heating temperature range, the highest temperature of the second heating temperature range is higher than the highest temperature of the first heating temperature range, the reaction temperature of the epitaxial device is higher than the highest temperature of the first heating temperature range and is in the second heating temperature range; acquiring the second temperature conversion relationship of the third temperature information and the second temperature information according to the first temperature information and the third temperature information in the preset second heating temperature range and the first temperature conversion relationship.

[0119] In a fifth aspect, the present application provides a storage medium, which stores a computer program. When the computer program is executed by a processor 51, the computer program performs the method in any one of the optional implementation manners of the above-mentioned embodiments to realize the following functions: obtaining third temperature information actually measured by a temperature measuring probe; obtaining temperature information of the epitaxial wafer according to the third temperature information and a preset second temperature conversion relationship; the preset second temperature conversion relationship is obtained by the following steps: respectively placing a tungsten-rhenium thermocouple and a thermocouple thermometer in a reaction chamber and on a substrate tray of the reaction chamber, and respectively obtaining first temperature information and second temperature information; heating the reaction chamber; obtaining a first temperature conversion relationship of the first temperature information and the second temperature information in a preset first heating temperature range; removing the thermocouple thermometer; heating the reaction chamber, and obtaining third temperature information by a temperature measuring probe of an epitaxial device; obtaining the first temperature information and the third temperature information in a preset second heating temperature range, the highest temperature of the second heating temperature range is greater than the highest temperature of the first heating temperature range, and a reaction temperature of the epitaxial device is greater than the highest temperature of the first heating temperature range and is in the second heating temperature range; obtaining a second temperature conversion relationship of the third temperature information and the second temperature information according to the first temperature information and the third temperature information in the preset second heating temperature range and the first temperature conversion relationship.

[0120] In the embodiments of the present application, it should be understood that the disclosed device and method can be implemented by other ways. The device embodiments described above are only schematic, for example, the division of the units is only a logical function division, and there can be another division way in actual implementation, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some communication interfaces, and can be electrical, mechanical or other forms.

[0121] In addition, the units described as separate components can or can not be physically separate, and the components shown as units can or can not be physical units, that is, they can be located in one place, or can be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the present embodiment.

[0122] Furthermore, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0123] In this document, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.

[0124] The above merely provides an example of the present application, but does not serve to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for measuring the temperature of epitaxial wafers inside and outside a reaction chamber, applied to epitaxial equipment, characterized in that, The method includes the following steps: Tungsten-rhenium thermocouples and thermocouple thermometers are placed inside the reaction chamber and on the substrate tray of the reaction chamber, respectively, to obtain the first temperature information and the second temperature information. The reaction chamber is heated; Obtain a first temperature transformation relationship between first temperature information and second temperature information within a preset first heating temperature range; Remove the thermocouple thermometer; The reaction chamber is heated, and third temperature information is obtained through the temperature probe of the epitaxial device; Acquire first temperature information and third temperature information within a preset second heating temperature range, wherein the highest temperature in the second heating temperature range is greater than the highest temperature in the first heating temperature range, and the reaction temperature of the epitaxial device is greater than the highest temperature in the first heating temperature range and is within the second heating temperature range. Based on the first temperature information and the third temperature information within the preset second heating temperature range, and the first temperature transformation relationship, a second temperature transformation relationship between the third temperature information and the second temperature information is obtained; During the epitaxial reaction, the temperature information of the epitaxial wafer is obtained based on the second temperature transformation relationship and the third temperature information actually measured by the temperature probe.

2. The method for measuring the temperature of the epitaxial wafers inside and outside the reaction chamber according to claim 1, characterized in that... The thermocouple thermometer is the same size as the epitaxial wafer processed by the epitaxial equipment.

3. The method for measuring the temperature of the epitaxial wafers inside and outside the reaction chamber according to claim 1, characterized in that, The step of obtaining the first temperature transformation relationship between the first temperature information and the second temperature information within a preset first heating temperature range includes: Acquire multiple sets of first temperature information and second temperature information within the preset first heating temperature range, and obtain the first temperature transformation relationship based on the multiple sets of first temperature information and second temperature information within the preset first heating temperature range.

4. The method for measuring the temperature of the epitaxial wafers inside and outside the reaction chamber according to claim 1, characterized in that, The first temperature transformation relationship is a linear function in one variable.

5. The method for measuring the temperature of the epitaxial wafers inside and outside the reaction chamber according to claim 1, characterized in that... The second temperature transformation relationship is a cubic function.

6. The method for measuring the temperature of the epitaxial wafers inside and outside the reaction chamber according to claim 1, characterized in that, The preset first heating temperature range is 125℃-1200℃.

7. A temperature measuring device for epitaxial wafers inside and outside a reaction chamber, applied to epitaxial equipment, characterized in that, The device includes: The first acquisition module is used to acquire third temperature information based on the actual temperature measured by the temperature probe; The second acquisition module is used to acquire the temperature information of the epitaxial wafer based on the third temperature information and the preset second temperature transformation relationship. The preset second temperature transformation relationship is obtained through the following steps: Tungsten-rhenium thermocouples and thermocouple thermometers are placed inside the reaction chamber and on the substrate tray of the reaction chamber, respectively, to obtain the first temperature information and the second temperature information. The reaction chamber is heated; Obtain a first temperature transformation relationship between first temperature information and second temperature information within a preset first heating temperature range; Remove the thermocouple thermometer; The reaction chamber is heated, and third temperature information is obtained through the temperature probe of the epitaxial device; Acquire first temperature information and third temperature information within a preset second heating temperature range, wherein the highest temperature in the second heating temperature range is greater than the highest temperature in the first heating temperature range, and the reaction temperature of the epitaxial device is greater than the highest temperature in the first heating temperature range and is within the second heating temperature range. Based on the first temperature information and the third temperature information within the preset second heating temperature range, and the first temperature transformation relationship, a second temperature transformation relationship is obtained between the third temperature information and the second temperature information.

8. An electronic device, characterized in that, It includes a processor and a memory, the memory storing computer-readable instructions, which, when executed by the processor, perform the steps of the method as claimed in claim 1.

9. A storage medium having a computer program stored thereon, characterized in that, When a computer program is executed by a processor, it performs the steps of the method as claimed in claim 1.

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