Sensor device and module

Abstract

The present embodiment aims to provide a sensor device capable of simultaneously detecting the direction and the amount of stress application. The sensor device of the present embodiment is a sensor device (IPD) provided with a substrate (SUB1) having a plurality of individual regions (PA) arranged in a matrix shape in a first direction (X) and a second direction (Y) intersecting each other, a plurality of individual electrodes (PE) arranged in the plurality of individual regions (PA), and a common electrode (CE) opposed to the plurality of individual electrodes (PE) and generating a plurality of electric fields (EF) between the plurality of individual electrodes (PE), the plurality of electric fields (EF) being different in direction from each other in plan view, the plurality of electric fields (EF) different in direction being applied to a sensor layer (FSL).

Description

Technical Field

[0001] Embodiments of the present invention relate to sensor devices and modules. Background Technology

[0002] There are known sensor devices that can detect the surface pressure distribution by means of the concave or convex shape of the object being measured.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: JP Patent No. 2017-527830

[0006] Patent Document 2: JP 2010-43881 Summary of the Invention

[0007] This embodiment provides a sensor device that can reconstruct its own three-dimensional shape by simultaneously detecting the direction and amount of stress applied, i.e., the sensor device that can detect its own three-dimensional shape.

[0008] One embodiment of the sensor device is a sensor device having a substrate and a sensor layer overlapping the substrate, the substrate having: a plurality of individual regions arranged in a matrix in a first direction and in a second direction intersecting each other in a first direction; a plurality of individual electrodes respectively disposed in the plurality of individual regions; and a common electrode opposite to the plurality of individual electrodes and generating a plurality of electric fields between the plurality of individual electrodes, the plurality of electric fields having different directions when viewed from above, the plurality of electric fields having different directions being applied to the sensor layer.

[0009] In another embodiment, the module is a module having multiple sub-modules. One of the multiple sub-modules has a substrate and a sensor layer overlapping the substrate. The substrate has multiple individual regions arranged in a matrix in a first direction and a second direction that intersect each other, multiple individual electrodes disposed in the multiple individual regions, and a common electrode opposite to the multiple individual electrodes and generating multiple electric fields between the multiple individual electrodes. The multiple electric fields have different directions when viewed from above, and the multiple electric fields with different directions are applied to the sensor layer.

[0010] Invention Effects

[0011] According to this embodiment, a sensor device is provided that can reconstruct its own three-dimensional shape by simultaneously detecting the direction and amount of stress applied, i.e., it can detect its own three-dimensional shape. Attached Figure Description

[0012] Figure 1AThis is a diagram showing the sensor device of Embodiment 1.

[0013] Figure 1B This is a diagram showing the sensor device of Embodiment 1.

[0014] Figure 2A This is a diagram illustrating the shape of a bent sensor device.

[0015] Figure 2B This is a diagram illustrating the shape of a bent sensor device.

[0016] Figure 3A It is a diagram illustrating strain.

[0017] Figure 3B It is a diagram illustrating strain.

[0018] Figure 3C It is a diagram illustrating strain.

[0019] Figure 3D It is a diagram illustrating strain.

[0020] Figure 4 This is a schematic top view of the sensor device.

[0021] Figure 5 It is a sectional view of a specific area.

[0022] Figure 6 It is a diagram showing the circuit configuration of individual area blocks.

[0023] Figure 7A This is a diagram illustrating stress detection.

[0024] Figure 7B This is a diagram illustrating stress detection.

[0025] Figure 7C This is a diagram illustrating stress detection.

[0026] Figure 7D This is a diagram illustrating stress detection.

[0027] Figure 7E This is a diagram illustrating stress detection.

[0028] Figure 8 This is a top view showing another configuration example of the sensor device in Embodiment 1.

[0029] Figure 9 This is a diagram showing the circuit configuration of individual area blocks in the configuration example.

[0030] Figure 10 This is a time map of individual regions / blocks.

[0031] Figure 11This is a top view showing another configuration example of the sensor device in Embodiment 1.

[0032] Figure 12 This is a diagram showing the circuit configuration of individual region blocks in Embodiment 1.

[0033] Figure 13 This is a time map of individual regions / blocks.

[0034] Figure 14 This is a top view showing another configuration example of the sensor device in Embodiment 1.

[0035] Figure 15 This is a top view showing another configuration example of the sensor device in Embodiment 1.

[0036] Figure 16 yes Figure 15 A rough cross-sectional view.

[0037] Figure 17 This is a top view showing another configuration example of the sensor device in Embodiment 1.

[0038] Figure 18 This is a schematic cross-sectional view showing the module of Embodiment 2.

[0039] Figure 19 This is a schematic cross-sectional view showing the modules in the example.

[0040] Figure 20 It is shown in the Figure 19 A cross-sectional view showing the state of the module when it is bent.

[0041] Figure 21 It is shown Figure 19 The diagram shown illustrates the configuration of an example module. Detailed Implementation

[0042] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, this disclosure is merely an example, and appropriate modifications that remain consistent with the spirit of the invention and are readily conceived by those skilled in the art are of course included within the scope of the present invention. Additionally, to make the description clearer, the width, thickness, shape, etc., of various parts in the drawings are sometimes shown schematically compared to the actual form, but this is merely an example and does not limit the interpretation of the present invention. Furthermore, in this specification and the various drawings, sometimes the same reference numerals are used for the same elements as those described with respect to the already presented drawings, and detailed descriptions are appropriately omitted.

[0043] Hereinafter, a sensor device according to one embodiment will be described in detail with reference to the accompanying drawings.

[0044] In this embodiment, the first direction X, the second direction Y, and the third direction Z are orthogonal to each other, but they may also intersect at an angle other than 90 degrees. The direction of the arrow tip toward the third direction Z is defined as up or above, and the direction opposite to the direction of the arrow tip toward the third direction Z is defined as down or below.

[0045] Furthermore, when referring to "the second component above the first component" and "the second component below the first component," the second component may be connected to the first component, or it may be located separately from the first component. In the latter case, a third component may be provided between the first and second components. On the other hand, when referring to "the second component on the first component" and "the second component below the first component," the second component is connected to the first component.

[0046] Additionally, there is an observation position for the sensor device at the tip of the arrow in the third direction Z. Observing from this position toward the XY plane defined by the first direction X and the second direction Y is called a top view. A cross-section of the sensor device in the XZ plane defined by the first direction X and the third direction Z, or in the YZ plane defined by the second direction Y and the third direction Z, is called a cross-sectional view.

[0047] <Implementation Method 1>

[0048] Figure 1A as well as Figure 1B This is a diagram illustrating the sensor device of this embodiment. Figure 1A This is an exploded perspective view of the sensor device according to this embodiment. Figure 1B It is shown Figure 1A A top view of a single area block PABL.

[0049] Figure 1A The sensor device IPD shown has a substrate SUB1, a sensor layer FSL, and a protective layer PRF. The sensor layer FSL overlaps with the substrate SUB1 in a top view. The substrate SUB1 has a scan line GL, a signal line SL, a bias wiring BIS, and individual electrodes PE on a substrate BA1 in the third direction Z.

[0050] Scan lines GL extend in the first direction X and are arranged side-by-side in the second direction Y. Signal lines SL extend in the second direction Y and are arranged side-by-side in the first direction. Bias wiring BIS extends in the second direction Y and is arranged side-by-side in the first direction. Individual electrodes PE are disposed in the region defined by the two signal lines SL and the two scan lines GL.

[0051] In addition, such as Figure 1A as well as Figure 1BAs shown, substrate SUB1 has multiple individual regions PA arranged in a matrix along the first direction X and the second direction Y. Each of the multiple individual regions PA has a scan line GL, a signal line SL, a bias wiring BIS, and an individual electrode PE. In this embodiment, four individual regions PA (PA1, PA2, PA3, and PA4, described later) are defined as an individual region block PABL.

[0052] Individual electrodes PE, located in individual regions PA, and a common electrode CE are electrically connected to the sensor layer FSL on the substrate SUB1. A protective layer PRF is also provided covering the sensor layer FSL. The individual electrodes PE and the sensor layer FSL will be described in detail later.

[0053] Figure 2A as well as Figure 2B This is a diagram illustrating the shape of a bent sensor device. Figure 2A This is a perspective view showing the shape of a bent sensor device IPD. The sensor device IPD can be bent along an object. Figure 2B It is a diagram showing the three components (εx, εy, γxy) of the XY plane in each individual region block PABL.

[0054] like Figure 2A As shown, when the sensor device IPD is bent, stress is applied to the sensor layer FSL corresponding to the individual area blocks PABL of the substrate SUB1.

[0055] When the longitudinal modulus of elasticity is set as E and the strain as ε, the tensile stress σ of the component is represented by σ = E × ε. That is, the stress σ is directly proportional to the strain ε. Furthermore, when the transverse modulus of elasticity is set as G and the strain as γ, the shear stress τ is represented by τ = G × γ, and the stress τ is directly proportional to the strain γ.

[0056] Therefore, by detecting the direction and amount of strain ε, the sensor device IPD can determine its own three-dimensional shape, and when attached to an object OBJ, it can determine the three-dimensional shape of OBJ.

[0057] like Figure 2B As shown, the direction and magnitude of strain ε can be obtained by measuring the three components (εx, εy, γxy) in the XY plane of each individual region block PABL. Here, εx and εy represent the stretching strain in the first direction X and the stretching strain in the second direction Y, respectively. γxy represents the shear strain in the XY plane.

[0058] Figures 3A to 3D It is a diagram illustrating strain. Figure 3A The basic structure of individual region blocks PABL in this embodiment is shown.

[0059] First of all, Figure 3A In this diagram, the direction that intersects the second direction Y at an acute angle θ in the clockwise direction is defined as the fourth direction DX, and the direction that intersects the second direction Y at an acute angle θ in the counterclockwise direction is defined as the fifth direction DY. The acute angle θ is, for example, 45°. When the acute angle θ is 45°, the fourth direction DX and the fifth direction DY become perpendicular to each other.

[0060] The first direction X, the second direction Y, the fourth direction DX, and the fifth direction DY are directions that intersect each other in the XY plane. Furthermore, when only considering the XY plane, there are cases where the third direction Z is excluded, and the first direction X, the second direction Y, the fourth direction DX, and the fifth direction DY are referred to as the first direction, the second direction, the third direction, and the fourth direction, respectively.

[0061] The first direction X, the second direction Y, the fourth direction DX, and the fifth direction DY are different directions in the XY plane, i.e., when viewed from above.

[0062] Individual region blocks PABL have resistors R1 for measuring strain in the first direction X, R2 for measuring strain in the second direction Y, R3 for measuring strain in the fourth direction DX, and R4 for measuring strain in the fifth direction DY. Resistors R1 to R4 correspond to the sensor layer FSL.

[0063] The changes in resistance ΔR1 and ΔR2 in the first direction X and the second direction Y respectively correspond to the tensile strain εx in the first direction X and the tensile strain εy in the second direction Y. The changes in resistance ΔR3 or ΔR4 in the fourth direction DX and the fifth direction DY correspond to the shear strain γxy in the XY plane.

[0064] Furthermore, the shear strain γxy can be obtained from at least one of the fourth direction DX and the fifth direction DY, and it is not necessary to measure both.

[0065] Here, we explain the use of a resistive strain sensor. Figures 3B to 3D This is a schematic diagram illustrating the principle of a strain sensor.

[0066] First, as a baseline state, such as Figure 3B As shown, the current value when a voltage Vref is applied to a resistor RST with a resistance value Rref is set as the current value Iref. Furthermore, in the sensor device IPD of this embodiment, the resistance value in a planar state without strain is, in principle, set as the resistance value Rref in the reference state.

[0067] like Figure 3CAs shown, when tensile stress is applied to resistor RST, the resistance value of resistor RST increases (refer to...). Figure 3C When the resistance value under applied tensile stress is defined as Rexp, and the increase in resistance is defined as ΔR1, then Rexp = Rref + ΔR1. Furthermore, because the resistance value increases, the current through resistor RST decreases, becoming the current value Iexp. When the decrease in current is defined as ΔI1, then Iexp = Iref - ΔI1.

[0068] On the other hand, such as Figure 3D As shown, when compressive stress is applied to resistor RST, the resistance of RST decreases. If we define the resistance under compressive stress as Rctr and the decrease in resistance as ΔR2, then Rctr = Rref - ΔR2. Furthermore, because the resistance decreases, the current in resistor RST increases, becoming the current Ictr. If we define the increase in current as ΔI2, then Iexp = Iref + ΔI2.

[0069] like Figures 3B to 3D As shown, the change in resistance can be calculated by measuring the change in current. That is, Figure 3A The changes in resistance values ​​of resistors R1 to R4 shown are obtained by measuring the changes in current flowing through each resistor. Alternatively, the changes in current can be converted into changes in voltage, and the changes in resistance values ​​can be detected by measuring the changes in voltage.

[0070] Figure 4 This is a schematic top view of the sensor device IPD. Figure 4 The detailed description of the planar structure of transistor Tr is omitted. Figure 4 The sensor device IPD shown has M scan lines GL_1 to GL_M and N signal lines SL_1 to SL_N (where M and N are natural numbers).

[0071] The scan line GL is connected to the scan line drive circuit GDV. The signal line SL is connected to the signal line drive circuit SDV. The bias wiring BIS is connected to the bias drive circuit BDV.

[0072] The scan line drive circuit GDV applies the signal Vscan to the scan line GL, which will be explained in detail later. The signal line SL outputs the signal Vsig.out to the signal line drive circuit SDV. Additionally, the bias drive circuit BDV applies the power supply voltage VDD to the bias wiring BIS.

[0073] Alternatively, the sensor device IPD may also have a control unit (not shown). The control unit is electrically connected to the scan line drive circuit GDV, the signal line drive circuit SDV, and the bias drive circuit BDV, and controls their respective drive circuits.

[0074] Each of the multiple individual region blocks PABL has an individual region PA1, an individual region PA2, an individual region PA3, and an individual region PA4. In addition, individual regions PA1, PA2, PA3, and PA4 are also referred to as the first individual region, the second individual region, the third individual region, and the fourth individual region, respectively.

[0075] exist Figure 4 In the diagram, a specific region PA1 is located in the m row and n column of the sensor region SA, a specific region PA2 is located in the m row and (n+1) column, a specific region PA3 is located in the (m+1) row and n column, and a specific region PA4 is located in the (m+1) row and (n+1) column (where m is a natural number greater than 1 and less than (M-1), and n is a natural number greater than 1 and less than (N-1).

[0076] In other words, individual regions PA1 to PA4 are arranged in a square pixel arrangement. More specifically, individual regions PA1 to PA4 are configured with two pixels in the first direction X and two pixels in the second direction Y.

[0077] Here, the arrangement of PA1 to PA4 in certain regions is not limited to the methods described above. Figure 4 In this diagram, individual regions PA1 and PA2 are adjacent in the first direction X. Additionally, individual regions PA1 and PA3 are adjacent in the second direction Y. However, the region adjacent to individual region PA1 in the first direction X could also be individual region PA3 or individual region PA4. Similarly, the region adjacent to individual region PA1 in the second direction Y could also be individual region PA2 or individual region PA4.

[0078] The arrangement of individual regions PA1 to PA4 in a specific region block PABL can be changed as needed.

[0079] Individual region PA1 has a transistor Tr1 and an individual electrode PE1. Individual electrode PE1 has a plurality of linear electrodes BR1 extending in the second direction Y. Individual region PA1 has a common electrode CE1 opposite to the individual electrode PE1. Common electrode CE1 has a plurality of linear electrodes CBR1 extending in the second direction Y. The plurality of linear electrodes BR1 and the plurality of linear electrodes CBR1 are respectively arranged opposite to each other through a slit ST1.

[0080] Individual region PA2 has a transistor Tr2 and an individual electrode PE2. Individual electrode PE2 has a plurality of linear electrodes BR2 extending in the first direction X. Individual region PA2 has a common electrode CE2 opposite to the individual electrode PE2. Common electrode CE2 has a plurality of linear electrodes CBR1 extending in the first direction X. The plurality of linear electrodes BR2 and the plurality of linear electrodes CBR2 are respectively arranged opposite to each other through a slit ST2.

[0081] Individual region PA3 has a transistor Tr3 and an individual electrode PE3. Individual electrode PE3 has multiple linear electrodes BR3 extending in the fifth direction DY. Individual region PA3 has a common electrode CE3 opposite to the individual electrode PE3. Common electrode CE3 has multiple linear electrodes CBR3 extending in the fifth direction DY. The multiple linear electrodes BR3 and the multiple linear electrodes CBR3 are respectively arranged opposite each other with slits ST3 between them.

[0082] Individual region PA4 has a transistor Tr4 and an individual electrode PE4. Individual electrode PE4 has multiple linear electrodes BR4 extending in the fourth direction DX. Individual region PA4 has a common electrode CE4 opposite to the individual electrode PE4. Common electrode CE4 has multiple linear electrodes CBR4 extending in the fourth direction DX. The multiple linear electrodes BR4 and the multiple linear electrodes CBR4 are respectively arranged opposite each other with slits ST4 between them.

[0083] In other words, the above content is... Figure 4 In the sensor device IPD shown, the extension direction of the linear electrode BR of the individual electrode PE disposed in an individual region PA is the same as the extension direction of the linear electrode CBR of the common electrode CE.

[0084] Furthermore, the direction in which the linear electrode BR and the linear electrode CBR in any individual region PA arranged along the first direction X extend is different from the direction in which the linear electrode BR and the linear electrode CBR of the individual region PA adjacent to the arbitrary individual region PA in the first direction X extend.

[0085] Furthermore, the direction in which the linear electrode BR and linear electrode CBR extend in any individual region PA arranged along the second direction is different from the direction in which the linear electrode BR and linear electrode CBR extend in the individual region PA adjacent to that individual region PA in the second direction Y.

[0086] More specifically, for example, the linear electrode BR1 of the individual electrode PE1 of the individual region PA1 and the linear electrode CBR1 of the common electrode CE1 extend in the second direction Y. In the individual region PA2 adjacent to the individual region PA1 in the first direction X, the linear electrode BR2 and the linear electrode CBR2 extend in the first direction X, which is different from the second direction Y.

[0087] In addition, in the individual region PA3 which is adjacent to the individual region PA1 in the second direction Y, the linear electrode BR3 and the linear electrode CBR3 extend in the fifth direction DY, which is different from the second direction Y.

[0088] exist Figure 4 The sensor device IPD shown has the same electrode configuration as the pixels of a so-called IPS (In-Plane Switching) type display device, where the individual electrodes PE and the common electrode CE are located on the same plane (the same XY plane). As will be explained in detail later, both the individual electrodes PE and the common electrode CE are connected to the insulating layer HRC.

[0089] Electric fields EF1, EF2, EF3, and EF4 are generated between individual electrode PE1 and common electrode CE1, between individual electrode PE2 and common electrode CE2, between individual electrode PE3 and common electrode CE3, and between individual electrode PE4 and common electrode CE4, respectively.

[0090] The electric fields EF1 to EF4 are generated in the directions of X (direction 1), Y (direction 2), DX (direction 4), and DY (direction 5), respectively. In other words, within a specific region PABL, an electric field is generated in four different directions on the XY plane.

[0091] In individual region PA1, the change in current value is detected as the strain (stretching) of the resistor R1 (sensor layer FSL) subjected to an electric field EF1 applied in the first direction X. In individual region PA2, the change in current value is detected as the strain (stretching) of the resistor R2 (sensor layer FSL) subjected to an electric field EF1 applied in the second direction Y. In individual region PA3, the change in current value is detected as the strain (shear) of the resistor R3 (sensor layer FSL) subjected to an electric field EF3 applied in the fourth direction DX. In individual region PA4, the change in current value is detected as the strain (shear) of the resistor R4 (sensor layer FSL) subjected to an electric field EF4 applied in the fifth direction DY.

[0092] As will be explained in detail later, the changes in each current value are detected as changes in voltage.

[0093] Furthermore, in the sensor device IPD of this embodiment, if shear stress can be ignored, it is also possible to measure only individual regions PA1 and PA2, or to set only individual regions PA1 and PA2.

[0094] Figure 5 This is a cross-sectional view of a specific area PA. Figure 5 In the individual region PA shown, transistor Tra has an insulating layer UC, a gate electrode (scan line GL), an insulating layer GI, a semiconductor layer SC, an insulating layer ILI, a source electrode (power supply voltage wiring SVS), a drain electrode DE, an insulating layer HRC, and an individual electrode PE on a substrate BA1. These are stacked sequentially in the third direction Z.

[0095] The transistor Trb has an insulating layer UC, a gate electrode (scan line GL), an insulating layer GI, a semiconductor layer SC, an insulating layer ILI, a source electrode (signal line SL), a drain electrode DE, an insulating layer HRC, and individual electrodes PE on a substrate BA1. These are stacked sequentially in the third direction Z.

[0096] In addition, certain regions of PA have an insulating layer UC, an insulating layer GI, a bias wiring BIS, an insulating layer ILI, an insulating layer HRC, and a common electrode CE on the substrate BA1. These are stacked sequentially in the third direction Z.

[0097] Individual electrodes PE and the common electrode CE are separated by slits ST (slits ST1 to ST4) on the same plane as described above. Figure 5 The middle layer (HRC) is positioned opposite the edge interface between the insulating layer and the sensor layer (FSL).

[0098] In addition, Figure 5 In this configuration, individual electrodes PE extend on the transistor Trb, but are not limited to this configuration. Individual electrodes PE may also not overlap with the transistor Trb.

[0099] The signal line SL, drain electrode DE, and bias wiring BIS are made of the same material. Individual electrodes PE and the common electrode CE are on the transistor Trb.

[0100] Furthermore, in this embodiment, layers formed from the same material and in the same process are designated as the same layer. Individual electrodes (PE) and the common electrode (CE) are located in the same layer.

[0101] A sensor layer FSL is configured to be grounded to both the individual electrode PE and the common electrode CE. A protective layer PRF is provided on the sensor layer FSL.

[0102] The sensor layer FSL is, for example, made of a pressure-sensitive material. This material includes an insulating resin and conductive particles. When elongation stress is applied, the pressure-sensitive material elongates and deforms, the distance between the conductive particles within the insulating resin decreases, and the resistance of the sensor layer FSL decreases. When the stress is removed, it returns to its shape before the stress was applied using the elasticity of the insulating resin, and the resistance returns to its original state. When contraction stress is applied, the pressure-sensitive material contracts and deforms, the distance between the conductive particles within the insulating resin increases, and the resistance of the sensor layer FSL increases. When the stress is removed, it returns to its shape before the stress was applied using the elasticity of the insulating resin, and the resistance returns to its original state.

[0103] The substrate BA1 is made of a flexible organic insulating material, such as polyimide. Insulating layers UC, GI, and IL are formed, for example, of inorganic insulating materials, specifically silicon oxide (SiO) or silicon nitride (SiN). Insulating layer HRC is formed of an organic insulating material, specifically of acrylic acid or polyimide.

[0104] The semiconductor layer SC is formed from polycrystalline silicon, amorphous silicon, oxide semiconductor, organic semiconductor, etc., such as low-temperature polycrystalline silicon.

[0105] The scan line GL, signal line SL, drain electrode DE, and bias wiring are formed of metallic materials such as Al (aluminum), Ti (titanium), Ag (silver), Mo (molybdenum), W (tungsten), Cu (copper), Cr (chromium), or alloys of these metallic materials. They can be single-layer structures or multi-layer structures of these metallic materials or stacked alloys.

[0106] Individual electrodes PE and common electrode CE can use the aforementioned metallic materials or alloys combining these materials, or transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0107] Furthermore, the sensor device IPD of this embodiment has a substrate SUB1, a sensor layer FSL, and a protective layer PRF. However, these layers can also be treated as a sub-module to form a module with multiple sub-modules stacked together. The module obtained by stacking sub-modules will be described in detail later.

[0108] Figure 6 This is a diagram showing the circuit configuration of individual PABL regions. Figure 6 In the individual region block PABL shown, as an example, individual regions PA1, PA2, PA3, and PA4 represent the individual regions PA in the first row and first column, the first row and second column, the second row and first column, and the second row and second column, respectively. However, the rows and columns are not limited to these.

[0109] A specific region PA1 serves as transistor Tr1, comprising transistors Tr1a and Tr1b. The gates of both transistors Tr1a and Tr1b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr1a is electrically connected to the power supply voltage wiring SVS and is subjected to the power supply voltage VSS. The other terminals of the source and drain of transistor Tr1a are electrically connected to the individual electrode PE1 and the other terminals of the source and drain of transistor Tr1b.

[0110] One of the source and one of the drain terminals of transistor Tr1b in a certain region PA1 are electrically connected to signal line SL_1, and one of the source and one of the drain terminals of transistor Tr3b in a certain region PA3 are electrically connected.

[0111] Individual electrodes PE1 in individual regions PA1 are electrically connected to one terminal of resistor R1 (sensor layer FSL).

[0112] The individual region PA2 serves as transistor Tr2, comprising transistors Tr2a and Tr2b. The gates of both transistors Tr2a and Tr2b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr2a is electrically connected to the power supply voltage wiring SVS and is subjected to the power supply voltage VSS. The other terminals of the source and drain of transistor Tr2a are electrically connected to the individual electrode PE2 and the other terminals of the source and drain of transistor Tr2b.

[0113] One of the source and one of the drain terminals of transistor Tr2b in region PA2 are electrically connected to signal line SL_2, and one of the source and one of the drain terminals of transistor Tr4b in region PA4 are electrically connected.

[0114] Individual electrodes PE2 of individual regions PA2 are electrically connected to one terminal of resistor R2 (sensor layer FSL).

[0115] Individual region PA3 serves as transistor Tr3, comprising transistors Tr3a and Tr3b. The gates of both transistor Tr3a and Tr3b are electrically connected to scan line GL_2. One of the source and drain terminals of transistor Tr3a is electrically connected to the power supply voltage wiring SVS and is subjected to the power supply voltage VSS. The other terminals of the source and drain of transistor Tr3a are electrically connected to individual electrode PE3 and the other terminals of the source and drain of transistor Tr3b.

[0116] In a particular region PA3, the individual electrode PE3 is electrically connected to one of the terminals of resistor R3 (sensor layer FSL).

[0117] Individual region PA4 serves as transistor Tr4, comprising transistors Tr4a and Tr4b. The gates of both transistor Tr4a and Tr4b are electrically connected to scan line GL_2. One of the source and drain terminals of transistor Tr4a is electrically connected to the power supply voltage wiring SVS and is subjected to the power supply voltage VSS. The other terminals of the source and drain of transistor Tr4a are electrically connected to individual electrode PE4 and the other terminals of the source and drain of transistor Tr4b.

[0118] Individual electrodes PE4 in individual regions PA4 are electrically connected to one terminal of resistor R4 (sensor layer FSL).

[0119] The bias wiring BIS is electrically connected to the other terminals of resistors R1, R2, R3, and R4 (all of which are sensor layer FSL), and is supplied with a power supply voltage VDD. Furthermore, the power supply voltage VDD is a voltage higher than the power supply voltage VSS (VDD > VSS). Alternatively, the power supply voltage VSS can be, for example, ground voltage GND.

[0120] exist Figure 6 In the process, signals Vscan1 and Vcan2 are applied to scan lines GL_1 and GL_2, respectively. Additionally, signal lines SL_1 and SL_2 output signals Vsig.out1 and Vsig.out2, respectively. The changes in the output signals Vsig.out1 and Vsig.out2 correspond to the aforementioned voltage changes.

[0121] Figures 7A to 7E This is a diagram illustrating stress detection. Figure 7A This is a graph showing the characteristics of the source-drain voltage Vds and drain current Ids of transistor Tra (Vds-Ids characteristics).

[0122] in addition, Figures 7B to 7E This is a diagram showing the circuit configuration of a specific region PA. Figure 7B And in certain areas of 7C, no stress was applied to PA (stress σ = 0). Figure 7D Tensile stress (stress σ > 0) was applied to certain areas of PA. Figure 7E Compressive stress (stress σ < 0) was applied to individual areas PA.

[0123] like Figure 7B As shown, when the signal Vscan is at level L (low), both transistors Tra and Trb are in the off state. Since the power supply voltage VDD is applied to one of the source and drain terminals of transistor Tra, the voltage across PE becomes VDD.

[0124] like Figure 7CAs shown, when the signal Vscan changes from L level to H (high) level, both transistors Tra and Trb become on. The signal line SL, connected to transistor Trb, is used to read the voltage, thus being a high-impedance input. Therefore, the current Iexp flows entirely through transistor Tra to the power supply voltage VSS. The amount of current flowing is determined by the sum of the resistance of the sensor layer FSL and the on-resistance of transistor Tra. The voltage of the individual electrode PE is determined by the ratio of the resistance of the sensor layer to the on-resistance of transistor Tra (the voltage drop in the sensor layer FSL under the current flow specified by the resistance of the sensor layer and the on-resistance of transistor Tra) based on the difference in power supply voltage (VDD-VSS). This voltage of the individual electrode PE is set to Vsig.out and read by the high-impedance input voltage detection unit connected to the signal line SL.

[0125] Figure 7D In cases where tensile stress is applied to PA in specific regions as described above, the signal Vscan is at level H.

[0126] exist Figure 7D In the case where the resistance value of resistor R is different from that of resistor R when no elongation stress is applied ( Figure 7C Compared to ΔR1, ΔR1 increases and becomes the resistance value Rexp(=Rntr+ΔR1).

[0127] At this point, the current value ΔI1 of the current through the resistance R and the transistor Tra decreases, becoming the current value Iexp (=Intr-ΔI1). Since the current value of the resistance R decreases, the voltage applied across the resistor R also decreases, becoming the voltage Vexp (<Vntr).

[0128] That is, under tensile stress, the source-drain voltage Vdse of transistor Tra is greater than the voltage Vdsn (Vdse > Vdsn). This voltage Vdse is output as the signal Vsig.out via the signal line SL.

[0129] Figure 7E In the case of applying compressive stress to individual regions PA as described above, the signal Vscan is at level H.

[0130] exist Figure 7E In the case where the resistor R is located on the middle elevation, the resistance value is different. Figure 7C Compared to ΔR2, it decreases and becomes the resistance value Rctr (=Rntr-ΔR2).

[0131] At this point, the current value ΔI2 flowing through resistor R and transistor Trb increases, becoming the current value Ictr (=Intr+ΔI2). Because the current flowing to resistor R increases, the voltage applied across resistor R also increases, becoming the voltage Vctr (>Vntr).

[0132] Let the source-drain voltage Vgs of the transistor Trb in the on-state be set as the voltage Vdsc. Figure 7C Similarly, Vscan is at level H, and the combined voltage of the voltage Vctr applied to resistor R and the gate-source voltage Vdsc of transistor Trb is the power supply voltage VDD.

[0133] That is, at the location where compressive stress is applied, the source-drain voltage Vdse of transistor Trb is smaller than the voltage Vdsn at the neutral plane (Vdsc < Vdsn). This voltage Vdse is output as the signal Vsig.out via the signal line SL.

[0134] As described above, by comparing the output signal Vsig.out with the voltage Vdsn at the reference neutral plane, it is possible to detect whether the stress applied to the individual region PA, including the transistor Trb, is tensile or compressive stress, and the stress force.

[0135] Furthermore, this embodiment describes a sensor device using a resistive strain sensor, but is not limited thereto. The resistive strain sensor can be replaced by, for example, a sensor using a capacitance sensor or a sensor using a piezoelectric element to form the sensor device.

[0136] Based on the above embodiment, a sensor device capable of simultaneously detecting the direction and amount of stress applied can be obtained.

[0137] <Example 1>

[0138] Figure 8 This is a top view showing another configuration example of the sensor device in this embodiment. Figure 8 In the example shown, with Figure 4 The difference between the example shown and the one depicted is that the arrangement of individual regions is a vertical stripe pixel arrangement.

[0139] exist Figure 8 In the illustrated sensor device IPD, individual region PA1 is located in rows 1 to M and columns q of sensor region SA, individual region PA2 is located in rows 1 to M and columns (q+1), individual region PA3 is located in rows 1 to M and columns (q+2), and individual region PA4 is located in rows 1 to M and columns (q+3) (here, q is a natural number greater than 1 and less than (N-3)). That is, in Figure 8In the sensor device IPD shown, the electric fields generated in individual regions PA arranged along the second direction Y are in the same direction. On the other hand, the electric fields generated in individual regions PA arranged along the first direction X are in different directions.

[0140] exist Figure 8 In the sensor device IPD shown, the linear electrodes BR and CBR in any individual region PA arranged along the second direction extend in the same direction as the linear electrodes BR and CBR of the individual region PA adjacent to the arbitrary individual region PA in the second direction Y.

[0141] Furthermore, the direction in which the linear electrode BR and the linear electrode CBR in any individual region PA arranged along the first direction X extend is different from the direction in which the linear electrode BR and the linear electrode CBR of the individual region PA adjacent to the arbitrary individual region PA in the first direction X extend.

[0142] More specifically, for example, the individual region PA1 adjacent to the individual region PA1 in the second direction Y is the same individual region PA1. Therefore, in the individual regions PA1 adjacent in the second direction Y, the linear electrode BR1 and the linear electrode CBR1 extend in the same direction, namely the first direction X.

[0143] In a particular region PA2 that is adjacent to a particular region PA1 in the first direction X, the linear electrode BR2 and the linear electrode CBR2 extend in the first direction X, which is different from the second direction Y.

[0144] In other words, individual regions PA1 to PA4 are arranged into so-called vertical stripe pixels. In addition, individual regions PA1 to PA4 are arranged side by side in the second direction Y, and four are arranged in the first direction X.

[0145] Figure 9 This is a diagram showing the circuit configuration of a specific area block PABL in this configuration example. Figure 9 In the individual region block PABL shown, as an example, individual regions PA1, PA2, PA3, and PA4 represent the individual regions PA in the first row and first column, the first row and second column, the first row and third column, and the first row and fourth column, respectively. The order of rows and columns is not limited to this.

[0146] In certain regions of PA1, the gates of transistors Tr1a and Tr1b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr1b is electrically connected to signal line SL_1.

[0147] In certain regions of PA2, the gates of transistors Tr2a and Tr2b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr2b is electrically connected to signal line SL_2.

[0148] In certain regions of PA3, the gates of transistors Tr3a and Tr3b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr3b is electrically connected to signal line SL_3.

[0149] In certain regions of PA4, the gates of transistors Tr4a and Tr4b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr4b is electrically connected to signal line SL_4.

[0150] Figure 10 This is a time-based graph of PABL for a specific region. For example... Figure 10 As shown, the input signal Vscan1 is given to the scan line GL_1.

[0151] Set the driving period of any scan line GL to period Scan_S (S is a natural number). Period Scan_1 is the driving period of scan line GL_1. In period Scan_1, Vscan1 is at level H in period PD11 and at level L outside period PD11.

[0152] When stress is applied to individual PABL regions, as described above, the resistance value of the sensor layer FSL changes, and the output voltage corresponding to the changed resistance value is used as the signal Vsig.out. Signal line SL_1 outputs signal Vsig.out1, signal line SL_2 outputs signal Vsig.out2, signal line SL_3 outputs signal Vsig.out3, and signal line SL_4 outputs signal Vsig.out4.

[0153] During PD11, the stress detected in individual regions PA1, PA2, PA3, and PA4 is output as the signal Vsig.out.

[0154] When Scan_1 ends, drive GL_2. Set the drive period for scan line GL_2 to Scan_2. Drive all scan lines GL in the sensor region SA in this way.

[0155] In this configuration example, the same effect is achieved as in the above-described implementation.

[0156] <Example 2>

[0157] Figure 11 This is a top view showing another configuration example of the sensor device in this embodiment. Figure 11 In the example shown, with Figure 4 The difference between the example shown and the one depicted is that the arrangement of individual regions is a horizontal stripe pixel arrangement.

[0158] exist Figure 11 In the illustrated sensor device IPD, individual region PA1 is located in the p-th row and 1 to N-th column of sensor region SA, individual region PA2 is located in the (p+1)-th row and 1 to N-th column, individual region PA3 is located in the (p+2)-th row and 1 to N-th column, and individual region PA4 is located in the (p+3)-th row and 1 to N-th column (here, p is a natural number greater than 1 and less than (M-3)). That is, in Figure 11 In the sensor device IPD shown, the electric fields generated in individual regions PA arranged along the first direction X are in the same direction. On the other hand, the electric fields generated in individual regions PA arranged along the second direction Y are in different directions.

[0159] exist Figure 11 In the sensor device IPD shown, the linear electrodes BR and CBR in any individual region PA arranged along the first direction X extend in the same direction as the linear electrodes BR and CBR in the individual region PA adjacent to the arbitrary individual region PA in the first direction X.

[0160] Furthermore, the direction in which the linear electrode BR and the linear electrode CBR in any individual region PA arranged along the second direction Y extend is different from the direction in which the linear electrode BR and the linear electrode CBR of the individual region PA adjacent to that individual region PA in the second direction Y extend.

[0161] More specifically, for example, the same individual region PA1 is adjacent to the individual region PA1 in the first direction X. Therefore, in the individual regions PA1 adjacent in the first direction X, the linear electrode BR1 and the linear electrode CBR1 extend in the same direction, namely the second direction Y.

[0162] In a separate region PA2 that is adjacent to a separate region PA1 in the second direction Y, the linear electrode BR2 and the linear electrode CBR2 extend in a first direction X, which is different from the second direction Y.

[0163] In other words, individual regions PA1 to PA4 are arranged into so-called horizontal stripe pixels. In addition, individual regions PA1 to PA4 are arranged side by side in the first direction X, and four are arranged in the second direction Y.

[0164] Figure 12 This is a diagram showing the circuit configuration of a specific area block PABL in this configuration example. Figure 12In the individual region block PABL shown, as an example, individual regions PA1, PA2, PA3, and PA4 represent the individual regions PA in the 1st row and 1st column, the 2nd row and 1st column, the 3rd row and 1st column, and the 4th row and 1st column, respectively. The order of rows and columns is not limited to this.

[0165] In certain regions of PA1, the gates of transistors Tr1a and Tr1b are electrically connected to scan line GL_1. One of the source and drain terminals of transistor Tr1b is electrically connected to signal line SL_1.

[0166] In certain regions of PA2, the gates of transistors Tr2a and Tr2b are electrically connected to scan line GL_2. One of the source and drain terminals of transistor Tr2b is electrically connected to signal line SL_1.

[0167] In certain regions of PA3, the gates of transistors Tr3a and Tr3b are electrically connected to scan line GL_3. One of the source and drain terminals of transistor Tr3b is electrically connected to signal line SL_1.

[0168] In certain regions of PA4, the gates of transistors Tr4a and Tr4b are electrically connected to scan line GL_4. One of the source and drain terminals of transistor Tr4b is electrically connected to signal line SL_1.

[0169] Figure 13 This is a time-based graph of PABL for a specific region. For example... Figure 13 As shown, signal Vscan1 is input to scan line GL_1, signal Vscan2 is input to scan line GL_2, signal Vscan3 is input to scan line GL_3, and signal Vscan4 is input to scan line GL_4.

[0170] Vscan1 is at H level in period PD11, and at L level in periods PD21, PD31, and PD41.

[0171] Vscan21 is at H level in period PD21, and at L level in periods PD11, PD31, and PD41.

[0172] Vscan31 is at H level in period PD31, and at L level in periods PD11, PD21, and PD41.

[0173] Vscan41 is at H level in period PD41, and at L level in periods PD11, PD21, and PD31.

[0174] When stress is applied to individual PABL regions, as described above, the resistance value of the sensor layer FSL changes, and the voltage corresponding to the changed resistance value is output as a signal Vsig.out. Signal line SL_1 outputs signal Vsig.out1.

[0175] The stress detected in individual region PA1 during period PD11, the stress detected in individual region PA2 during period PD21, the stress detected in individual region PA3 during period PD31, and the stress detected in individual region PA4 during period PD41 are output as the signal Vsig.out.

[0176] The periods PD11, PD21, PD31, and PD41 for detecting arbitrary individual regions PA1 to PA4 are set as period Scan_B (B is a natural number). Period Scan_1 is the driving period for scan lines GL_1 to GL_4. After period Scan_1 ends, the driving of scan lines GL_5 and GL_8 begins. The driving period for scan lines GL_5 to GL_8 is set as period Scan_2. In this way, the driving of all scan lines GL in the sensor region SA is performed.

[0177] This configuration example also achieves the same effect as the above-described implementation.

[0178] <Example 3>

[0179] Figure 14 This is a top view showing another configuration example of the sensor device in this embodiment. Figure 14 In the example shown, with Figure 4 The difference between the examples shown lies in the ratio of the number of individual regions within a single region block.

[0180] Figure 14 The sensor device IPD shown has two individual regions PA1, two individual regions PA2, one individual region PA3, and one individual region PA4 in a single region block. That is, the number of individual regions PA1 and PA2 is twice the number of individual regions PA3 and PA4.

[0181] In addition, Figure 14 In the accompanying drawings, only the scan line GL, signal line SL, individual electrodes PE, and electric field EF are shown for ease of observation. Additionally, in... Figure 14 In the diagram, the individual electrode PE and the common electrode CE are shown together as the individual electrode PE.

[0182] exist Figure 14In the sensor region SA, in a specific region block PABL, a specific region PA1 is configured in the r-th row and s-th column, a specific region PA2 is configured in the r-th row and (s+1)-th column, and a specific region PA1 is configured in the r-th row and (s+2)-th column.

[0183] Additionally, a region PA3 is configured in row (r+1) and column s, a region PA4 is configured in row (r+1) and column (s+1), and a region PA2 is configured in row (r+1) and column (s+2) (where r is a natural number greater than 1 and less than (M-2), and s is a natural number greater than 1 and less than (N-1).

[0184] In the aforementioned individual region blocks PABL, the ratio of the number of individual regions detecting changes in resistance (stretching) in the first direction X and the second direction Y, and changes in resistance (shear stress) in the fourth direction DX and the fifth direction DY, is 2:1. In other words, the ratio of sensitivity in the first direction X and the second direction Y, and in the fourth direction DX and the fifth direction DY, is 2:1.

[0185] Furthermore, this example illustrates a scenario where the ratio of PA to individual regions is set to 2:1, but it is not limited to this and the ratio of PA to individual regions can be appropriately changed.

[0186] The number of individual regions PA1 and PA2 used for detecting expansion and contraction is preferably equal, as are the number of individual regions PA3 and PA4 used for detecting shear stress. However, the number of individual regions PA1 and PA2 may differ from the number of individual regions PA3 and PA4. For example, the number of individual regions PA1 and PA2 may be t times or (1 / t) times the number of individual regions PA3 and PA4 (where t is a natural number). In this case, the ratio of sensitivity in the first direction X and the second direction Y, and in the fourth direction DX and the fifth direction DY, is t:1 or 1:t.

[0187] Furthermore, this example illustrates that changing has Figure 4 The example shown is an example of the ratio of individual regions PA in a sensor device IPD with a square pixel arrangement, but it is not limited to this. This configuration example can be applied to... Figure 8 as well as Figure 11 The sensor device IPD described in the document. For example, in Figure 8 In this context, columns from individual regions PA1 and PA2 can be added consecutively to columns from individual regions PA4. For example, in... Figure 11 In addition, rows from individual regions PA1 and PA2 can be added consecutively to rows from individual regions PA4.

[0188] In this configuration example, the same effect is achieved as in the above-described implementation.

[0189] <Example 4>

[0190] Figure 15 This is a top view showing another configuration example of the sensor device in this embodiment. Figure 15 In the example shown, with Figure 4 The difference between the illustrated configuration and the one shown is that it has a sensor layer with a different sensitivity.

[0191] Figure 15 The illustrated sensor device IPD has a sensor layer FSL1 in individual regions PA1 and PA2, and a sensor layer FSL2 in individual regions PA3 and PA4. In this configuration example, the sensor layers FSL1 and FSL2 have different sensitivities. In other words, the change in resistance value under the same bending pressure differs between sensor layers FSL1 and FSL2. Figure 15 In this case, sensor layer FSL1 has higher sensitivity than sensor layer FSL2. For example, when sensor layers FSL1 and FSL2 are made of the aforementioned pressure-sensitive material, it is sufficient to set the amount of conductive particles contained in sensor layer FSL1 to be greater than that in sensor layer FSL2.

[0192] Figure 16 yes Figure 15 A schematic cross-sectional view. Here, in Figure 16 In order to facilitate the observation of the accompanying drawings, the constituent elements other than the individual electrodes PE, the common electrode CE, and the sensor layers FSL1 and FSL2 are referred to as [missing information]. Figure 5 The constituent elements are omitted here.

[0193] like Figure 16 As shown, a sensor layer FSL1 is disposed above the individual electrode PE1 and the common electrode CE1 in a certain region PA1, and above the individual electrode PE2 and the common electrode CE2 in a certain region PA2. A sensor layer FSL2 is disposed above the individual electrode PE3 and the common electrode CE3 in a certain region PA3, and above the individual electrode PE4 and the common electrode CE4 in a certain region PA4.

[0194] Sensor layers FSL1 and FSL2 are formed, for example, by inkjet coating.

[0195] Furthermore, this embodiment illustrates the use of two sensor layers with different sensitivities, but the number of sensor layers is not limited to this. The sensor device IPD of this embodiment can also have two or more sensor layers with different sensitivities as needed.

[0196] In this configuration example, the same effect is achieved as in the above-described implementation.

[0197] <Example 5>

[0198] Figure 17 This is a top view showing another configuration example of the sensor device in this embodiment. Figure 17 In the example shown, with Figure 4 The difference between the illustrated configuration and the one shown is that it has a sensor capable of acquiring location information.

[0199] exist Figure 17 In the sensor device shown, in each of the first direction X and the second direction Y, a sensor SES capable of acquiring position information is provided for every two individual region blocks PABL.

[0200] The sensor SES is, for example, a semiconductor sensor formed of semiconductor, and at least one of an accelerometer, an angular velocity sensor (gyroscope sensor), or a geomagnetic sensor. Furthermore, multiple sensor SESs may be provided.

[0201] Ideally, the position information detected by an individual region PA should not deviate from the original position. However, if the position information detected by an individual region PA deviates from the original position, the position deviation will increase if the individual region PA is increased. This position deviation can be corrected using a sensor SES.

[0202] Furthermore, this example illustrates setting up sensor SES for every two individual region blocks PABL or for every four individual regions PA in each of the first direction X and the second direction Y, but the number of sensor SES is not limited to this. The number of sensor SES can be appropriately changed as needed.

[0203] Furthermore, this example illustrates the placement of the sensor SES at a location that does not overlap with the individual region PA, but the location of the sensor SES is not limited to this. The sensor SES can be placed inside any individual region PA.

[0204] In this configuration example, the same effect is achieved as in the above-described implementation.

[0205] <Implementation Method 2>

[0206] In Embodiment 1, the case where the module only undergoes bending deformation is described. In this embodiment, a module in which multiple sub-modules are stacked to distinguish between the bending deformation of the module and the overall expansion and contraction of the module is described. Figure 18 This is a schematic cross-sectional view showing the modules of this embodiment. Modules other than the stress coupling layer CP between submodules SM1 and SM2, such as displays or touch panels, may also be present.

[0207] Figure 18 The illustrated module MDL has a submodule SM1, a stress coupling layer CP, and a submodule SM2. These are stacked sequentially in the third direction Z. Furthermore, the sides of submodules SM1 and SM2 are designated as sides PLS1 and PLS2, respectively.

[0208] Module MDL also has a control unit (not shown). The control unit is electrically connected to submodules SM1 and SM2 and controls the drive of submodules SM1 and SM2. In addition, it compares the measured values ​​measured by submodules SM1 and SM2 and outputs the measured values ​​to the outside.

[0209] Alternatively, the control unit may be the control unit described in Embodiment 1, or it may be another control unit that is electrically connected to the control unit described in Embodiment 1.

[0210] Figure 18 The sub-modules SM1 and SM2 shown are the same as the sensor device IPD described in Embodiment 1. In this embodiment, a module in which the sensor device IPD of Embodiment 1 is set as a sub-module and multiple sub-modules (sensor devices IPD) are stacked together is described.

[0211] Here, the stress coupling layer refers to a layer that fixes multiple components together. Components coupled by the stress coupling layer deform integrally with each other. Therefore, including... Figure 18 The module MDL shown, including submodules SM1 and SM2, has a single neutral plane NP. In other words, submodules SM1 and SM2 of module MDL are configured relative to each other in the third direction, separated by the neutral plane NP.

[0212] The stress coupling layer (CP) is formed using materials including acrylic resin, silicone resin, and polyurethane resin. The stress coupling layer (CP) is formed, for example, by room temperature curing, thermal curing, or UV curing. When the stress coupling layer (CP) is formed by thermal curing, the resin used is preferably a resin that cures at temperatures below 100°C. Alternatively, the stress coupling layer (CP) can be formed using lamination methods such as atmospheric pressure lamination or vacuum lamination. Furthermore, the thickness of the stress coupling layer (CP) is 10 μm to 250 μm, preferably 25 μm to 100 μm.

[0213] exist Figure 18 In the illustrated module MDL, a stress coupling layer CP is disposed between sub-modules SM1 and SM2. Therefore, when the module MDL as a whole elongates / contracts, both sub-modules SM1 and SM2 elongate and contract. In this case, the strain directions are the same, thus distinguishing it from bending deformation.

[0214] <Example 1>

[0215] Figure 19This is a schematic cross-sectional view showing the modules in this configuration example. Figure 19 The module shown is Figure 18 The difference between the illustrated configuration and the one shown is that multiple sub-modules are stacked with a stress decoupling layer between them.

[0216] Figure 19 The illustrated module MDL has a support substrate RSP, a stress decoupling layer DCP1, a submodule SM1, a stress decoupling layer DCP2, a submodule SM2, a stress decoupling layer DCP3, a submodule SM3, a stress decoupling layer DCP4, and a cover member CVP. These are stacked sequentially in the third direction Z.

[0217] In addition, Figure 19 In the module MDL shown, the side surfaces of the support substrate RSP, submodule SM1, submodule SM2, submodule SM3, and cover component CVP are respectively designated as side surfaces PLR, PLS1, PLS2, PLS3, and PLV.

[0218] Furthermore, in this configuration example, when there is no need to specifically distinguish modules SM1 to SM3, they are collectively referred to as submodules SM. Additionally, when there is no need to specifically distinguish stress decoupling layers DCP1 to DCP4 and DCP5 (described later), they are collectively referred to as stress decoupling layers DCP. The number of submodules SM and stress decoupling layers DCP is not limited to the above limitations and can be appropriately changed.

[0219] In this configuration example, the stress decoupling layer is equivalent to a layer that separates the stress between multiple sub-modules when the module MDL is bent. Even if the module MDL is bent, the stress decoupling layer causes the sub-modules to slide against each other, so the stress generated in the multiple sub-modules will not affect each other.

[0220] exist Figure 19 For example, the stress decoupling layer DCP2 is configured between submodules SM1 and SM2. Thus, submodules SM1 and SM2 each have a single neutral plane NP2 and NP3, respectively.

[0221] Similarly, the support base plate SP, sub-module SM3, and cover component CVP have central facades NP1, NP4, and NP5, respectively.

[0222] The stress decoupling layer (DCP) comprises at least one of a nonlinear elastomer and a viscous fluid. Alternatively, it may comprise both a nonlinear elastomer and a viscous fluid.

[0223] The elastic modulus of the nonlinear elastomer is 100 kPa or less, preferably 10 kPa or less. Here, elastic modulus specifically refers to shear modulus, tensile storage modulus, and shear storage modulus. The nonlinear elastomer needs to have high adhesion to the sub-modules SM arranged above and below it and be able to undergo large deformations. For example, if the deformation is expressed as tensile elongation, it is 150% or more, preferably 200% or more. By using a nonlinear elastomer with a stress decoupling layer DCP, the module MDL can be given restorative properties to recover to its pre-bending state. The thickness of the stress decoupling layer is 10 μm to 250 μm, preferably 25 μm to 100 μm.

[0224] Nonlinear elastomers are elastic adhesives formed using materials including, for example, acrylic resins, silicone resins, polyurethane resins, natural rubber, and synthetic rubber. Furthermore, nonlinear elastomers exhibit a rubber-like state within the operating temperature range of the module MDL. This operating temperature range is, for example, 0–50°C. Nonlinear elastomers are formed, for example, by room temperature curing, heat curing, or UV curing. When a nonlinear elastomer is formed by heat curing, the resin used is preferably a resin that cures at temperatures below 100°C. Nonlinear elastomers are also formed, for example, by lamination using atmospheric pressure lamination or vacuum lamination, coating based on a jet dispensing machine or inkjet printing, or, in the case of a photosensitive resin, by photolithography.

[0225] The viscosity of the viscous fluid is 100 cP or higher, preferably 1000 cP or higher. Using a viscous fluid through a stress decoupling layer (DCP) can impart flexibility to the operation of bending the module (MDL).

[0226] Viscous fluids are formed using materials including polymers, polymer mixtures, and polymer gels. Additionally, viscous fluids can be air. Furthermore, the viscous fluids used as viscous fluids can be Newtonian or non-Newtonian fluids.

[0227] The ratio or composition of materials used in the stress decoupling layer (DCP) is selected based on considerations of the positional resilience of each component after bending the module MDL, or the flexibility of the bending operation. For example, when positional resilience of each component is emphasized, a nonlinear elastomer is used in the stress decoupling layer DCP. Conversely, when flexibility of operation is prioritized over positional resilience, a viscous fluid is used. The stress decoupling layer DCP can be formed using multiple nonlinear elastomers with different elastic moduli, or using both nonlinear elastomers and viscous fluids, to adjust the overall elastic modulus of the layer. By using both nonlinear elastomers and viscous fluids in the stress decoupling layer DCP, positional resilience can be ensured with the nonlinear elastomers, and the viscous fluid can control the ergonomics. Furthermore, various materials can be used as linear elastomers or as viscous fluids.

[0228] Submodule SM can be, for example, a flexible sensor device, a display device, a feedback device, etc. For example, the sensor device IPD described in Embodiment 1 can be configured as submodule SM1, and a flexible sensor device of a different type than the sensor device IPD in Embodiment 1 can be configured as submodule SM2. A flexible display device, such as a thin-panel display, can also be configured as submodule SM3.

[0229] Alternatively, a tactile / force interface (also known as a tactile interaction interface) can be configured as a submodule SM2. Information about the three-dimensional shape of the device itself, measured by the sensor device IPD (submodule SM1), or the three-dimensional shape of the object OBJ to which the sensor device is attached, can be fed back to the user as tactile / force feedback through the tactile / force interface.

[0230] Alternatively, multiple different types of sensor devices can be stacked as sub-modules SM1 to SM3 to form a module MDL.

[0231] Furthermore, the number and order of each submodule SM layer stack are not limited to the above and can be appropriately modified. In addition, the layers connecting the submodules SM do not need to all be stress decoupling layers DCP; they can also be layers with properties of stress coupling layers CP, or a combination of stress coupling layers CP and stress decoupling layers DCP.

[0232] Furthermore, in this embodiment, submodules SM1 to SM4 are referred to as submodule 1, submodule 2, submodule 3, and submodule 4.

[0233] The support substrate RSP is a flexible support member, such as a resin substrate made of a material that is heat-resistant, moisture-resistant, strong, and inexpensive.

[0234] The cover component CVP is a flexible protective component, such as a plastic film. Furthermore, if the submodule SM adjacent to the cover component CVP is a display device, the cover component CVP may also include, in addition to the aforementioned film, an optical film for the display device, such as a polarizer.

[0235] In this example, flexible support components, sub-modules, and protective components are sometimes collectively referred to as flexible equipment.

[0236] Figure 20 It is shown in the Figure 19 A cross-sectional view showing the state of the MDL module when it is bent. Figure 20 The diagram shows the state of the region between faces FC3 and FC4 of module MDL. Module MDL has the same configuration as faces FC3 to FC4, therefore, the description will focus on face FC3.

[0237] As described above, a stress decoupling layer DCP1 is disposed between the support substrate RSP and sub-module SM1, a stress decoupling layer DCP2 is disposed between sub-module SM1 and sub-module SM2, a stress decoupling layer DCP3 is disposed between sub-module SM2 and sub-module SM3, and a stress decoupling layer DCP4 is disposed between sub-module SM3 and cover member CVP. Therefore, when the module MDL is bent, the side PLR ​​of the support substrate RSP, the side PLS1 of sub-module SM1, the side PLS2 of sub-module SM2, the side PLS3 of sub-module SM3, and the side PLV of cover member CVP are inconsistent.

[0238] exist Figure 20 In the diagram, side PLS3 of submodule SM3 is located on the outer side compared to side PLV of cover member CVP. Side PLS2 of submodule SM2 is located on the outer side compared to side PLS3 of submodule SM3. Side PLS1 of submodule SM1 is located on the outer side compared to side PLS2 of submodule SM2. Side PLR ​​of support substrate RSP is located on the outer side compared to side PLS1 of submodule SM1.

[0239] As described above, by providing stress decoupling layers DCP between sub-modules SM, between the support substrate RSP and sub-modules SM, and between sub-modules SM and cover members CVP, bending can be independently controlled using their respective neutral surfaces NP.

[0240] Here, return to Figure 19 This describes the situation where a new submodule is added to the module MDL. Figure 19 The submodule SM4 shown has a neutral surface NP6. Additionally, a stress decoupling layer DCP5 is provided in submodule SM4, grounded to its lower surface.

[0241] Each flexible device can be freely added or replaced with the help of the stress decoupling layer (DCP). For example, Figure 19 The submodule SM4 and stress decoupling layer DCP5 shown can be added between the support substrate RSP and the stress decoupling layer DCP1. After addition, they are stacked in the order of support substrate RSP, stress decoupling layer DCP5, submodule SM4, and stress decoupling layer DCP1. The support substrate RSP and submodule SM4 are decoupled by stress decoupling layer DCP5, and submodule SM4 and submodule SM1 are decoupled by stress decoupling layer DCP1. Therefore, submodule SM4 and submodule SM1 can be independently controlled on their respective mid-planes NP6 and NP2.

[0242] Figure 21 It is shown Figure 19 The diagram shown illustrates an example of the structure of a module MDL. Figure 21The illustrated module MDL has sub-modules SM1 to SM3 and a control unit CTR. Sub-modules SM1 to SM3 are each connected to the control unit CTR. Each of the sub-modules SM1 to SM3 has a stress decoupling layer DCP1 to DCP3.

[0243] Figure 21 The submodule SM1 shown is the sensor device IPD shown in Embodiment 1. Regarding submodule SM1, the stress decoupling layer DCP, substrate SUB1, and sensor layer FSL are stacked sequentially in the third direction Z. Submodule SUB1 is connected to the control unit CTR, controlled by control signals from the control unit CTR, and outputs measurement data (e.g., signal Vsig.out) measured by submodule SM1 to the control unit CTR. Furthermore, the pressure-sensitive material layer is offset from the central surface NP1.

[0244] Figure 21 The submodule SM2 shown has a tactile / force sensor interface (tactile interaction interface). Submodule SM2 has an actuation mechanism HPF.

[0245] Submodule SM2 uses the actuation mechanism HPF to feed back tactile / force information, such as vibration or weak current, to the user based on the control signal from the control unit CTR.

[0246] In addition, Figure 21 In this context, it is assumed that the actuation mechanism HPF is an actuation mechanism containing a driving element (e.g., a transistor) inside. However, similar to submodule SM1, the substrate having the driving element and the actuation mechanism may be on different layers, and a structure in which these substrates and mechanisms are stacked may be used.

[0247] Figure 21 The submodule SM3 shown is a display device, specifically a thin-panel display. Submodule SM3 includes a substrate SUB2 and a display functional layer DSP. Like substrate SUB1, substrate SUB has transistors, signal lines, scan lines, etc., as driving elements. Additionally, substrate SUB2 has pixel electrodes or common electrodes for driving the display functional layer DSP. The display functional layer DSP can be, for example, a liquid crystal layer, an organic EL (Electroluminescence) layer, or a micro-LED layer. Furthermore, in this configuration example, micro-LEDs refer to LEDs (light-emitting diodes) with a longest side length of 100 μm or less.

[0248] The substrate SUB2 is connected to the control unit CTR and is controlled using control signals from the control unit CTR. Based on the control signals received from the substrate SUB2, the driving elements within the substrate SUB2 and the display function layer DSP are driven to perform the display.

[0249] The following, for example, explains how to... Figure 21 The MDL module is used in the case of clothing. By placing the MDL module in close contact with the user's body, the submodule SM1, which acts as a sensor device, measures the shape information of the body.

[0250] The SM3 submodule, serving as a thin-panel display, shows the shape or color of the clothing. Additionally, the SM2 submodule, serving as a haptic / force sensor interface, provides tactile feedback to the user, such as the stiffness or feel of the clothing.

[0251] When the user moves their body, submodule SM1 detects changes in the shape information of module MDL and outputs it to the control unit CTR. Based on the shape information output from submodule SM1, the control unit CTR outputs tactile information or display information to submodules SM2 and SM3 respectively.

[0252] For example, when a user changes posture, the shape change of submodule SM1 can detect which posture has been adopted. Body shape information based on the changed posture is sent to the control unit CTR. The control unit CTR sends control signals to submodules SM2 and SM3 in the form of changes to haptic feedback or display. Submodule SM3 displays a shape of clothing that matches the changed posture. Additionally, submodule SM2 feeds back haptic information based on the changed posture, such as the stretching or tightening of clothing, to the user.

[0253] Furthermore, if a user wishes to change the type of clothing, the control unit CTR outputs the information of the changed clothing to submodules SM2 and SM3. Even if the type of clothing is changed, the above method can be used to allow the user to virtually try on the changed clothing.

[0254] As mentioned above, there is no need to prepare multiple clothes; the user can virtually try on clothes using only the MDL module.

[0255] Using the above example, we can obtain a module that can perform neutral plane control for each sub-module.

[0256] Furthermore, this configuration example also achieves the same effect as the above-described implementation method.

[0257] Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in a wide variety of other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments or variations thereof are included within the scope or spirit of the invention and are included within the scope equivalent to the invention described in the claims.

[0258] Explanation of reference numerals in the attached figures

[0259] BIS bias wiring, BR line electrode, CBR line electrode, CE common electrode, CP stress coupling layer, CTR control unit, DCP stress decoupling layer, EF electric field, FSL sensor layer, GL scan line, IPD sensor device, Ictr current value, Id drain current, Iexp current value, Iref current value, MDL module, NP mid-plane, OBJ object, PA individual area, PABL individual area block, PE individual electrode, R resistor, RST resistor, Rctr resistance value, Rexp resistance value, Rref resistance value, SA sensor area, SES sensor, SL signal line, SM sub-module, ST slit, SUB1 substrate, SUB2 substrate, SVS power supply voltage wiring, Scan period, Tr transistor, VDD power supply voltage, VSS power supply voltage, Vctr voltage, Vexp voltage, Vgs gate-source voltage, Vdsc voltage, Vdse voltage, Vdsn voltage, Vntr voltage, Vref voltage, Vscan signal, Vsig.out signal.

Claims

1. A module comprising multiple sub-modules, characterized in that, One of the multiple submodules has: Substrate; and The sensor layer overlapping the substrate, The substrate has a plurality of individual regions arranged in a matrix in a first direction and a second direction that intersect each other. The plurality of individual regions include a first individual region, a second individual region, a third individual region, and a fourth individual region. The first individual region is adjacent to the second individual region along the first direction, and the first individual region is adjacent to the third individual region along the second direction. The second individual region is adjacent to the first individual region along the first direction, and the second individual region is adjacent to the fourth individual region along the second direction. The first individual region has a plurality of first individual linear electrodes and a plurality of first common linear electrodes, all extending along the second direction, with each of the plurality of first individual linear electrodes and each of the plurality of first common linear electrodes facing each other. The first individual region has a plurality of first slits disposed between the plurality of first individual linear electrodes and the plurality of first common linear electrodes, and opposite to each of the plurality of first individual linear electrodes and each of the plurality of first common linear electrodes. A first electric field is generated along the first direction between the plurality of first individual linear electrodes and the plurality of first common linear electrodes. The second individual region has a plurality of second individual linear electrodes and a plurality of second common linear electrodes, each extending along the first direction, wherein each of the plurality of second individual linear electrodes and each of the plurality of second common linear electrodes is opposite to each other. The second individual region has a plurality of second slits disposed between the plurality of second individual linear electrodes and the plurality of second common linear electrodes, and opposite to each of the plurality of second individual linear electrodes and each of the plurality of second common linear electrodes. A second electric field is generated along the second direction between the plurality of second individual linear electrodes and the plurality of second common linear electrodes. The direction intersecting the second direction at a 45° counterclockwise angle is designated as the third direction, and the direction intersecting the second direction at a 45° clockwise angle is designated as the fourth direction. The third individual region has a plurality of third individual linear electrodes and a plurality of third common linear electrodes, each extending along the fourth direction, wherein each of the plurality of third individual linear electrodes and each of the plurality of third common linear electrodes is opposite to each other. The third individual region has a plurality of third slits disposed between the plurality of third individual linear electrodes and the plurality of third common linear electrodes, and opposite to each of the plurality of third individual linear electrodes and each of the plurality of third common linear electrodes. A third electric field is generated along the third direction between the plurality of third individual linear electrodes and the plurality of third common linear electrodes. Each of the fourth individual regions consists of a plurality of fourth individual linear electrodes and a plurality of fourth common linear electrodes extending along the third direction, with each of the plurality of fourth individual linear electrodes and each of the plurality of fourth common linear electrodes facing each other. The fourth individual region has a plurality of fourth slits disposed between the plurality of fourth individual linear electrodes and the plurality of fourth common linear electrodes, and opposite to each of the plurality of fourth individual linear electrodes and each of the plurality of fourth common linear electrodes. A fourth electric field is generated along the fourth direction between the plurality of fourth individual linear electrodes and the plurality of fourth common linear electrodes. The plurality of submodules includes a first submodule and a second submodule. A stress coupling layer is configured between the first submodule and the second submodule. By forming the neutral face of the module in the stress coupling layer, the first sub-module and the second sub-module together have a neutral face.

2. The module according to claim 1, characterized in that, It has a control unit that controls the multiple sub-modules. The control unit measures the extension and retraction in the first direction and the second direction in each of the plurality of sub-modules. The bending in a fifth direction, which intersects the first, second, third, and fourth directions, is determined by comparing the measured values ​​of the plurality of sub-modules.

3. The module according to claim 1, characterized in that, The plurality of submodules also includes a second submodule and a third submodule. One of the multiple submodules is the first submodule. The second submodule is a display device. The third submodule is a tactile / force feedback device. The first submodule, the second submodule, and the third submodule are stacked.

4. The module according to claim 1, characterized in that, The number of the plurality of first individual regions, the number of the plurality of second individual regions, the number of the plurality of third individual regions, and the number of the plurality of fourth individual regions are equal.

5. The module according to claim 1, characterized in that, The number of the plurality of first individual regions and the number of the plurality of second individual regions are equal. The number of the plurality of third individual regions and the number of the plurality of fourth individual regions are equal. The number of the plurality of first individual regions and the plurality of second individual regions are different from the number of the plurality of third individual regions and the plurality of fourth individual regions.

6. The module according to claim 1, characterized in that, The sensor layer has multiple sensor layers with different sensitivities.

7. The module according to claim 1, characterized in that, It also has sensors that can acquire location information.

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