Methods and equipment for testing contact resistance

Abstract

This application provides a method and apparatus for testing contact resistance. When testing the contact resistance of a MOS transistor operating in the linear region, the contact resistance at each sampling temperature is determined by establishing a functional relationship between the total resistance of the MOS transistor at each sampling temperature and the channel width of the MOS transistor. Based on the contact resistance at each sampling temperature, a calibration coefficient for the contact resistance at the current ambient temperature is determined. Then, the measurement result of the contact resistance is corrected based on the calibration coefficient at the current ambient temperature to obtain an accurate resistance value at the current ambient temperature. This effectively eliminates the influence of ambient temperature and parasitic effects on the measurement result of the contact resistance, improving the measurement accuracy of the MOS transistor.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method and apparatus for testing contact resistance. Background Technology

[0002] Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), also known as a MOS transistor, is the most basic component in the semiconductor device manufacturing process and is widely used in various integrated circuits.

[0003] In the process of MOS transistor measurement and device model extraction, it is usually necessary to test the electrical characteristics of MOS transistors, such as Idsat, Vtlin, Vtsat, and Idlin. During DRAM fabrication, the coexistence of MOS transistors in the memory cells and peripheral circuits results in high contact resistance values ​​for the MOS transistors, leading to significant parasitic resistance that cannot be removed during measurement. This limits the accuracy of the measurements and makes it impossible to extract accurate electrical parameters and device models.

[0004] In actual contact resistance testing, the contact resistance value is affected by various factors, such as changes in ambient temperature. Therefore, accurately measuring the contact resistance value to improve the testing accuracy of MOS transistors is a pressing issue. Summary of the Invention

[0005] This application provides a method and apparatus for testing contact resistance, which can accurately measure the resistance value of contact resistance, thereby improving the testing accuracy of MOS transistors.

[0006] In a first aspect, this application provides a method for testing contact resistance, used to test the contact resistance of a MOS transistor operating in the linear region, the method comprising:

[0007] Determine the functional relationship between the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor, wherein the first resistance value is the sum of the channel resistance and the contact resistance of the MOS transistor;

[0008] Based on the aforementioned functional relationship, the contact resistance of the MOS transistor at each sampling temperature is determined;

[0009] Based on the contact resistance of the MOS transistor at each sampling temperature, determine the calibration coefficient of the contact resistance at the current ambient temperature.

[0010] The resistance value of the contact resistor at the current ambient temperature is determined based on the calibration coefficient, the resistance value per unit area of ​​the contact resistor, and the area of ​​the contact resistor.

[0011] In one feasible implementation, determining the functional relationship between the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor includes:

[0012] The first resistance of the MOS transistor at each sampling temperature was measured when the MOS transistor used different channel widths.

[0013] Based on the first resistance value of the MOS transistor at each sampling temperature when the MOS transistor uses different channel widths, determine the functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor.

[0014] In one feasible implementation, determining the contact resistance of the MOS transistor at each sampling temperature based on the functional relationship includes:

[0015] Based on the aforementioned functional relationship, determine the function curves corresponding to the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a preset rectangular coordinate system;

[0016] The contact resistance of the MOS transistor at each sampling temperature is determined based on the intercept of the function curve corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system; wherein, the contact resistance of the MOS transistor is not related to the channel width used by the MOS transistor.

[0017] In one feasible implementation, determining the calibration coefficient of the contact resistance at the current ambient temperature based on the resistance value of the MOS transistor at each sampling temperature includes:

[0018] Based on the sampling temperatures and the contact resistance of the MOS transistor at the sampling temperatures, a resistance-temperature parameter relating the contact resistance to the temperature is determined.

[0019] The calibration coefficient of the contact resistance at the current ambient temperature is obtained based on the preset standard temperature, the current ambient temperature, and the resistance temperature parameter.

[0020] In one feasible implementation, obtaining the calibration coefficient of the contact resistance at the current ambient temperature based on a preset standard temperature, the current ambient temperature, and the resistance temperature parameter includes:

[0021] The calibration coefficient Rt of the contact resistance at the current ambient temperature is obtained in the following manner:

[0022] Rt = 1 + (Te - Tn) * Tc

[0023] Where Te represents the current ambient temperature, Tn represents the standard temperature, and Tc represents the resistance temperature parameter.

[0024] In one feasible implementation, the contact resistance includes a first contact resistance and a second contact resistance, wherein the first contact resistance is connected to the drain of the MOS transistor and the second contact resistance is connected to the source of the MOS transistor.

[0025] The step of determining the resistance value of the contact resistor at the current ambient temperature based on the calibration coefficient, the resistance value per unit area of ​​the contact resistor, and the area of ​​the contact resistor includes:

[0026] Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance, a first target resistance value of the first contact resistance at the current ambient temperature is determined.

[0027] Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance, a second target resistance value of the second contact resistance at the current ambient temperature is determined.

[0028] In one feasible implementation, determining the first target resistance value of the first contact resistance at the current ambient temperature based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance includes:

[0029] The first target resistance value Rdc is determined in the following manner:

[0030] Rdc = Rc * Rt * S1

[0031] The step of determining the second target resistance value of the second contact resistance at the current ambient temperature based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance includes:

[0032] The second target resistance value Rsc is determined in the following manner:

[0033] Rsc = Rc * Rt *S2

[0034] Wherein, Rc represents the resistance per unit area of ​​the contact resistance at the standard temperature, Rt represents the calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

[0035] Secondly, this application provides a contact resistance testing apparatus for testing the contact resistance of a MOS transistor operating in the linear region, the apparatus comprising:

[0036] The first processing module is used to determine the functional relationship between the first resistance value of the MOS transistor and the channel width of the MOS transistor at various sampling temperatures, wherein the first resistance value is the sum of the channel resistance and the contact resistance of the MOS transistor.

[0037] The second processing module is used to determine the contact resistance of the MOS transistor at each sampling temperature based on the functional relationship.

[0038] The first calculation module is used to determine the calibration coefficient of the contact resistance at the current ambient temperature based on the resistance value of the contact resistance of the MOS transistor at each sampling temperature.

[0039] The second calculation module is used to determine the resistance value of the contact resistor at the current ambient temperature based on the calibration coefficient, the unit area resistance value of the contact resistor, and the area of ​​the contact resistor.

[0040] In one feasible implementation, the first processing module is used to:

[0041] The first resistance of the MOS transistor at each sampling temperature was measured when the MOS transistor used different channel widths.

[0042] Based on the first resistance value of the MOS transistor at each sampling temperature when the MOS transistor uses different channel widths, determine the functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor.

[0043] In one feasible implementation, the second processing module is used to:

[0044] Based on the aforementioned functional relationship, determine the function curves corresponding to the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a preset rectangular coordinate system;

[0045] The contact resistance of the MOS transistor at each sampling temperature is determined based on the intercept of the function curve corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system; wherein, the contact resistance of the MOS transistor is not related to the channel width used by the MOS transistor.

[0046] In one feasible implementation, the first computing module is used to:

[0047] Based on the sampling temperatures and the contact resistance of the MOS transistor at the sampling temperatures, a resistance-temperature parameter relating the contact resistance to the temperature is determined.

[0048] The calibration coefficient of the contact resistance at the current ambient temperature is obtained based on the preset standard temperature, the current ambient temperature, and the resistance temperature parameter.

[0049] In one feasible implementation, the first computing module is used to:

[0050] The calibration coefficient Rt of the contact resistance at the current ambient temperature is obtained in the following manner:

[0051] Rt = 1 + (Te - Tn) * Tc

[0052] Where Te represents the current ambient temperature, Tn represents the standard temperature, and Tc represents the resistance temperature parameter.

[0053] In one feasible implementation, the contact resistance includes a first contact resistance and a second contact resistance, wherein the first contact resistance is connected to the drain of the MOS transistor and the second contact resistance is connected to the source of the MOS transistor.

[0054] The second calculation module is used for:

[0055] Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance, a first target resistance value of the first contact resistance at the current ambient temperature is determined.

[0056] Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance, a second target resistance value of the second contact resistance at the current ambient temperature is determined.

[0057] In one feasible implementation, the second computing module is used for:

[0058] The first target resistance value Rdc is determined in the following manner:

[0059] Rdc = Rc * Rt * S1

[0060] The second target resistance value Rsc is determined in the following manner:

[0061] Rsc = Rc * Rt *S2

[0062] Wherein, Rc represents the resistance per unit area of ​​the contact resistance at the standard temperature, Rt represents the calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

[0063] Thirdly, this application provides an electronic device, including: at least one processor and a memory;

[0064] The memory stores computer-executed instructions;

[0065] The at least one processor executes computer execution instructions stored in the memory, causing the at least one processor to perform the contact resistance test method as provided in the first aspect.

[0066] Fourthly, this application provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, implement the contact resistance testing method provided in the first aspect.

[0067] Fifthly, this application provides a computer program product, including a computer program that, when executed by a processor, implements the contact resistance testing method provided in the first aspect.

[0068] The contact resistance testing method and apparatus provided in this application, when testing the contact resistance of a MOS transistor operating in the linear region, determines the contact resistance of the MOS transistor at each sampling temperature by determining the functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor; based on the contact resistance value of the MOS transistor at each sampling temperature, a calibration coefficient for the contact resistance at the current ambient temperature is determined; and then, based on the calibration coefficient for the contact resistance at the current ambient temperature, the measurement result of the contact resistance is corrected to obtain the accurate resistance value of the contact resistance at the current ambient temperature. This can effectively eliminate the influence of ambient temperature and parasitic effects on the measurement result of the contact resistance, and improve the measurement accuracy of the MOS transistor. Attached Figure Description

[0069] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments of this application or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0070] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in the embodiments of this application;

[0071] Figure 2 This is a schematic diagram of the equivalent resistance of the MOS transistor in the embodiments of this application;

[0072] Figure 3 This is a schematic diagram showing the relationship between the gate voltage and the channel resistance of the MOS transistor in the embodiments of this application.

[0073] Figure 4 This is a schematic flowchart of a contact resistance testing method provided in an embodiment of this application;

[0074] Figure 5 This is a schematic diagram of the function curves of the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a rectangular coordinate system in the embodiments of this application.

[0075] Figure 6 This is a schematic diagram of the contact resistance of the MOS transistor in the embodiments of this application at various sampling temperatures and the corresponding function curves of the sampling temperatures in a rectangular coordinate system.

[0076] Figure 7 This is a schematic diagram of the program modules of a contact resistance testing device provided in an embodiment of this application. Detailed Implementation

[0077] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0078] MOS transistors, as the most fundamental components in semiconductor device manufacturing, are widely used in various integrated circuits. (See also...) Figure 1 , Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application. Figure 1In this context, the aforementioned semiconductor devices are based on MOS transistors and specifically include:

[0079] P-type substrate 100 (P-substrate, abbreviated as Psub), deep n-well structure 200 (deep n-well, abbreviated as DNW), P-well structure 300 (abbreviated as PWell), shallow trench isolation structure 400 (shallow trench isolation, abbreviated as STI), N+ implantation region 501 and N+ implantation region 502, polysilicon structure 600 (poly), first contact resistor 701 and second contact resistor 702.

[0080] In this structure, N+ injection region 501 and N+ injection region 502 are embedded inside P-well structure 300. First contact resistor 701 is located above N+ injection region 501 and forms an ohmic contact with N+ injection region 501. Second contact resistor 702 is located above N+ injection region 502 and forms an ohmic contact with N+ injection region 502.

[0081] In this configuration, the N+ injection region 501 forms the source of the MOS transistor, the N+ injection region 502 forms the drain of the MOS transistor, and the polysilicon structure 600 forms the gate of the MOS transistor.

[0082] In some embodiments, when testing MOS transistors, the electrical parameters of the MOS transistors can be extracted and modeled based on the BSIM4 test model. The BSIM4 test model is a physics-based software simulation system used for test circuit simulation and CMOS technology development. It features accuracy, scalability, robustness, and language support, and can provide DC analysis, transient analysis, and AC analysis data for standard circuits.

[0083] In some embodiments, when extracting parameters of a MOS transistor based on the BSIM4 test model described above, the influence of contact resistance cannot be eliminated during measurement. Since the value of the contact resistance is crucial to the electrical characteristics of the MOS transistor, it is necessary to add the contact resistance value of the MOS transistor to the parameter model. However, in actual testing, the contact resistance value is affected by various factors; for example, the contact resistance value changes with ambient temperature.

[0084] To more accurately measure and extract contact resistance values, this application provides a method for testing and extracting contact resistance. When the MOS transistor is operating in the linear region, the contact resistance of the MOS transistor is determined at various sampling temperatures. Simultaneously, a calibration coefficient for the contact resistance at the current ambient temperature is determined. Based on this calibration coefficient, the measurement results of the contact resistance are corrected to obtain the accurate resistance value at the current ambient temperature. This effectively eliminates the influence of ambient temperature and parasitic effects on the measurement results of the contact resistance, improving the measurement accuracy of the MOS transistor. Specific implementation details can be found in the descriptions of the following embodiments.

[0085] It is understandable that MOS transistors typically have three operating regions: the fully conducting region, the cutoff region, and the linear region. When a MOS transistor operates in the linear region, it can be considered equivalent to a resistor, with its total resistance being the sum of the channel resistance and the contact resistance.

[0086] To better understand the embodiments of this application, please refer to... Figure 2 , Figure 2 This is a schematic diagram of the equivalent resistance of the MOS transistor in the embodiments of this application.

[0087] exist Figure 2 In the diagram, d represents the drain, s represents the source, and g represents the gate. A MOS transistor includes two contact resistors, licon, one of which is connected to the source (s) and the other to the drain (d).

[0088] When a MOS transistor operates in the linear region, its total resistance Rtotal is the sum of the channel resistance Rch and the two contact resistances Rlicon.

[0089] Right now:

[0090] Rtotal = Rch + 2 Rlicon

[0091] Based on the characteristics of MOS transistors, the channel resistance Rch can be determined in the following way:

[0092]

[0093] in, C represents the effective mobility. ox Vg represents the effective oxide capacitance, W represents the channel width, L represents the channel length, Vg represents the gate voltage, Von represents the threshold voltage, m represents the body effect coefficient, and Vds represents the voltage between the drain (d) and source (s).

[0094] Reference Figure 3 , Figure 3 This is a schematic diagram showing the relationship between the gate voltage and the channel resistance of the MOS transistor in the embodiments of this application.

[0095] from Figure 3 As can be seen from this, when the MOS transistor is operating in the linear region, when the gate voltage Vg is greater than a certain threshold (such as Vt), the channel resistance of the MOS transistor will ( Figure 3 The Rds shown will tend to a fixed value, that is, at this point The value is a fixed value, and the channel resistance Rch is inversely proportional to the channel width W.

[0096] It should be noted that the contact resistance testing method provided in this application embodiment is based on the MOS transistor always operating in the linear region and the gate voltage being greater than a certain threshold, which will not be repeated in the following embodiments.

[0097] Reference Figure 4 , Figure 4 This is a flowchart illustrating a contact resistance testing method provided in an embodiment of this application. It can be used to test the contact resistance of a MOS transistor operating in the linear region. In one feasible embodiment of this application, the method includes:

[0098] S401. Determine the functional relationship between the first resistance of the MOS transistor at each sampling temperature and the channel width of the MOS transistor.

[0099] The first resistance value mentioned above is the sum of the channel resistance and the contact resistance of the MOS transistor, i.e., Rtotal.

[0100] In this embodiment, multiple MOS transistor test keys with different channel widths can be pre-set, as well as multiple different sampling temperatures. Then, at each sampling temperature, the first resistance Rtotal of each MOS transistor test key with different channel widths is measured, and based on the measurement results, the functional relationship between the first resistance Rtotal of the MOS transistor at each sampling temperature and the channel width W of the MOS transistor is determined.

[0101] S402. Based on the above functional relationship, determine the contact resistance of the MOS transistor at each sampling temperature.

[0102] In this embodiment of the application, it is assumed that at a certain sampling temperature t1, the functional relationship between the first resistance Rtotal1 of the MOS transistor and the channel width W of the MOS transistor is as follows:

[0103]

[0104] Where x1 represents the resistance coefficient of the channel resistance, which can be determined by the channel width of each MOS transistor test unit with different channel widths and the first resistance value Rtotal1 at the sampling temperature t1 mentioned above.

[0105] Since Rtotal = Rch + 2Rlicon, and the contact resistance of a MOS transistor is independent of the channel width, the resistance values ​​of each contact licon of the MOS transistor at the sampling temperature t1 can be determined based on the above functional relationship. .

[0106] Similarly, by using the same calculation method for sampling, the contact resistance of the MOS transistor at various sampling temperatures can be obtained.

[0107] S403. Based on the contact resistance of the MOS transistor at various sampling temperatures, determine the calibration coefficient of the contact resistance at the current ambient temperature.

[0108] In semiconductor structures, the resistance of a contact has a linear relationship with its ambient temperature. The aforementioned calibration coefficient can be used to characterize the relationship between the change in contact resistance and its ambient temperature. For example, it can be used to represent the relative change in resistance when the ambient temperature of the contact changes by 1 degree Celsius.

[0109] S404. Based on the above calibration coefficient, the resistance value per unit area of ​​the contact resistance, and the area of ​​the contact resistance, determine the resistance value of the contact resistance at the current ambient temperature.

[0110] It is understandable that, at a constant temperature, the resistance R of a conventional material is directly proportional to the length L of the material and inversely proportional to the area S of the material, usually expressed as: R = ρL / S, where ρ represents the resistivity of the material.

[0111] In some embodiments, the resistance value per unit area of ​​the contact resistance described above can be understood as the resistance value generated by the contact resistance within each unit area.

[0112] It is understood that, in this embodiment of the application, the measurement results of the contact resistance are corrected according to the calibration coefficient of the contact resistance at the current ambient temperature. This can effectively eliminate the influence of ambient temperature and parasitic effects on the measurement results of the contact resistance and improve the measurement accuracy of the MOS transistor.

[0113] Based on the content described in the above embodiments, in a feasible implementation, the first resistance value of the MOS transistor at each sampling temperature can be measured separately when the MOS transistor uses different channel widths. The functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor can then be determined according to the functional relationship. The corresponding function curve of the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system can then be determined.

[0114] To better understand the embodiments of this application, please refer to... Figure 5 , Figure 5 This is a schematic diagram of the function curves of the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a rectangular coordinate system in the embodiments of this application.

[0115] exist Figure 5 In the figure, L1, L2, L3, and L4 are the function curves of the first resistance Rtotal of the MOS transistor and the channel width W of the MOS transistor in the rectangular coordinate system at four different sampling temperatures t1, t2, t3, and t4.

[0116] The functional relationship between the first resistance Rtotal of the MOS transistor and the channel width W of the MOS transistor is as follows:

[0117]

[0118] Therefore, the intercepts of the above function curves L1, L2, L3, and L4 on the vertical axis of the rectangular coordinate system can be determined as the contact resistance values ​​of the MOS transistor at each sampling temperature t1, t2, t3, and t4. That is, based on the above functional relationship, the value of 2Rlicon at each sampling temperature t1, t2, t3, and t4 can be determined. Here, x is a fixed value, which can be determined by the slopes of the function curves L1, L2, L3, and L4 at each sampling temperature.

[0119] In one feasible implementation, after determining the contact resistance of the MOS transistor at each sampling temperature, a resistance-temperature parameter relating the contact resistance to the temperature is determined based on the sampling temperature and the contact resistance of the MOS transistor at each sampling temperature.

[0120] For example, assuming tc represents the aforementioned resistance-temperature parameter and tx represents the sampling temperature, the relationship between the contact resistance value R and tc and tx can be represented by a univariate nth-degree function. For example:

[0121] R = tc * tx + C, where C is a preset coefficient;

[0122] In one feasible implementation, the sampling temperatures and the contact resistance of the MOS transistor at each sampling temperature are respectively input into the above-mentioned univariate nth degree function, so that several points can be obtained in the rectangular coordinate system. By curve fitting, the optimal value of the resistance temperature parameter tc can be obtained.

[0123] To better understand the embodiments of this application, please refer to... Figure 6 , Figure 6 This is a schematic diagram showing the function curves of the contact resistance of the MOS transistor in the embodiments of this application at various sampling temperatures and the corresponding sampling temperatures in a rectangular coordinate system.

[0124] Optionally, the least squares method can be used to fit the curve of the above-mentioned univariate nth degree function, or MATLAB software can be used to fit the curve of the above-mentioned univariate nth degree function. The specific curve fitting method is not limited in the embodiments of this application.

[0125] In one feasible implementation, after determining the above-mentioned resistance temperature parameters, the calibration coefficient of the contact resistance at the current ambient temperature can be calculated based on the preset standard temperature, the current ambient temperature, and the above-mentioned resistance temperature parameters.

[0126] Optionally, the calibration factor Rt of the contact resistance at the current ambient temperature can be obtained in the following way:

[0127] Rt = 1 + (Te - Tn) * Tc

[0128] Where Te represents the current ambient temperature. In this application, some conventional temperature measurement methods can be used to detect the ambient temperature of the current test environment.

[0129] Tn represents the standard temperature mentioned above. This standard temperature is set to standardize the measurement conditions so that comparisons can be made between different sets of data. Optionally, the standard temperature can be an internationally recognized value that is referenced by many measurement models, such as the melting temperature of ice, i.e., the freezing point of water: 0°C (273.15K).

[0130] Tc represents the above resistance temperature parameter.

[0131] In one feasible implementation, after determining the calibration coefficient of the contact resistance at the current ambient temperature, the resistance value of the contact resistance at the current ambient temperature can be calculated based on the calibration coefficient, the unit area resistance value of the contact resistance at the standard temperature, and the area of ​​the first contact resistance.

[0132] For example, the resistance Rdc of the first contact at the current ambient temperature is calculated as follows:

[0133] Rdc = Rc * Rt * S1

[0134] The resistance Rsc of the second contact at the current ambient temperature is calculated as follows:

[0135] Rsc = Rc * Rt *S2

[0136] Where Rc represents the resistance per unit area of ​​the contact resistance at the above standard temperature, Rt represents the above calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

[0137] It is understood that in some implementations, the contact structure of a MOS transistor may connect multiple metal wires. Therefore, when the contact structure of a MOS transistor connects multiple metal wires, S1 = N1 * S1', and S2 = N2 * S2'. Here, N1 and N2 represent the number of metal wires used in the first contact resistance and the second contact resistance, respectively, and S1' and S2' represent the areas of the metal wires used in the first contact resistance and the second contact resistance, respectively.

[0138] The contact resistance testing method provided in this application, when testing the contact resistance of a MOS transistor operating in the linear region, corrects the measurement result of the contact resistance according to the calibration coefficient of the contact resistance at the current ambient temperature, thereby obtaining the accurate resistance value of the contact resistance at the current ambient temperature. This can effectively eliminate the influence of ambient temperature and parasitic effects on the measurement result of the contact resistance, and improve the measurement accuracy of the MOS transistor.

[0139] Based on the content described in the above embodiments, referring to Figure 7 , Figure 7 This is a schematic diagram of a program module for a contact resistance testing device provided in an embodiment of this application, used to test the contact resistance of a MOS transistor operating in the linear region. In this embodiment, the contact resistance testing device includes:

[0140] The first processing module 701 is used to determine the functional relationship between the first resistance value of the MOS transistor and the channel width of the MOS transistor at various sampling temperatures, wherein the first resistance value is the sum of the channel resistance and the contact resistance of the MOS transistor.

[0141] The second processing module 702 is used to determine the contact resistance of the MOS transistor at each sampling temperature based on the above functional relationship.

[0142] The first calculation module 703 is used to determine the calibration coefficient of the contact resistance at the current ambient temperature based on the resistance value of the MOS transistor at each sampling temperature.

[0143] The second calculation module 704 is used to determine the resistance value of the contact resistance at the current ambient temperature based on the above calibration coefficient, the unit area resistance value of the contact resistance, and the area of ​​the contact resistance.

[0144] The contact resistance testing apparatus provided in this application determines the contact resistance of a MOS transistor operating in the linear region by establishing a functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor. Based on the contact resistance values ​​at each sampling temperature, a calibration coefficient for the contact resistance at the current ambient temperature is determined. Then, the measurement results of the contact resistance are corrected based on this calibration coefficient to obtain an accurate resistance value at the current ambient temperature. This effectively eliminates the influence of ambient temperature and parasitic effects on the measurement results of the contact resistance, improving the measurement accuracy of the MOS transistor.

[0145] In one feasible implementation, the first processing module 701 is used for:

[0146] The first resistance of the MOS transistor at each sampling temperature is measured when the MOS transistor uses different channel widths. Based on the first resistance of the MOS transistor at each sampling temperature when the MOS transistor uses different channel widths, the functional relationship between the first resistance of the MOS transistor at each sampling temperature and the channel width of the MOS transistor is determined.

[0147] In one feasible implementation, the second processing module 702 is used for:

[0148] Based on the above functional relationship, the function curves corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system are determined; based on the intercept of the function curves corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system, the contact resistance value of the MOS transistor at each sampling temperature is determined; wherein, the contact resistance of the MOS transistor is not related to the channel width used by the MOS transistor.

[0149] In one feasible implementation, the first computing module 703 is used for:

[0150] Based on the sampling temperatures and the contact resistance of the MOS transistor at each sampling temperature, the resistance-temperature parameter between the contact resistance and the temperature is determined; according to the preset standard temperature, the current ambient temperature, and the resistance-temperature parameter, the calibration coefficient of the contact resistance at the current ambient temperature is obtained.

[0151] In one feasible implementation, the first computing module 703 is used for:

[0152] The calibration factor Rt of the contact resistance at the current ambient temperature is obtained as follows:

[0153] Rt = 1 + (Te - Tn) * Tc

[0154] Where Te represents the current ambient temperature, Tn represents the standard temperature, and Tc represents the resistance temperature parameter.

[0155] In one feasible implementation, the contact resistance includes a first contact resistance and a second contact resistance, wherein the first contact resistance is connected to the drain of the MOS transistor and the second contact resistance is connected to the source of the MOS transistor.

[0156] The second calculation module 704 is used for:

[0157] Based on the aforementioned calibration coefficient, the unit area resistance value of the contact resistance at standard temperature, and the area of ​​the first contact resistance, a first target resistance value of the first contact resistance at the current ambient temperature is determined; based on the aforementioned calibration coefficient, the unit area resistance value of the contact resistance at standard temperature, and the area of ​​the second contact resistance, a second target resistance value of the second contact resistance at the current ambient temperature is determined.

[0158] In one feasible implementation, the second computing module 704 is used for:

[0159] The first target resistance value Rdc is determined in the following way:

[0160] Rdc = Rc * Rt * S1

[0161] The second target resistance value Rsc is determined in the following way:

[0162] Rsc = Rc * Rt *S2

[0163] Where Rc represents the resistance per unit area of ​​the contact resistance at standard temperature, Rt represents the calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

[0164] It is understood that the functions implemented by each functional module in the above-mentioned contact resistance testing device correspond to the steps in the contact resistance testing method described in the above embodiments. Therefore, the detailed implementation process of each functional module in the above-mentioned contact resistance testing device can be referred to the steps in the contact resistance testing method described in the above embodiments, and will not be repeated here.

[0165] Based on the content described in the above embodiments, this application also provides an electronic device, which includes at least one processor and a memory; wherein the memory stores computer execution instructions; the at least one processor executes the computer execution instructions stored in the memory to implement the various steps in the contact resistance testing method described in the above embodiments, which will not be repeated here.

[0166] Based on the content described in the above embodiments, this application also provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, implement the various steps in the contact resistance testing method described in the above embodiments.

[0167] Based on the content described in the above embodiments, this application also provides a computer program product, which includes a computer program. When the computer program processor is executed by the processor, it can implement the various steps in the contact resistance testing method described in the above embodiments.

[0168] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices, or modules, and may be electrical, mechanical, or other forms.

[0169] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0170] Furthermore, the functional modules in the various embodiments of this application can be integrated into one processing unit, or each module can exist physically separately, or two or more modules can be integrated into one unit. The unit composed of the above modules can be implemented in hardware or in the form of hardware plus software functional units.

[0171] The integrated modules implemented as software functional modules described above can be stored in a computer-readable storage medium. These software functional modules, stored in a storage medium, include several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute some steps of the methods described in the various embodiments of this application.

[0172] It should be understood that the aforementioned processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), etc. A general-purpose processor can be a microprocessor or any conventional processor. The steps of the method disclosed in the application can be directly manifested as execution by a hardware processor, or execution by a combination of hardware and software modules within the processor.

[0173] The memory may include high-speed RAM, and may also include non-volatile storage (NVM), such as at least one disk storage device, and may also be a USB flash drive, external hard drive, read-only memory, disk or optical disc, etc.

[0174] The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc. For ease of illustration, the buses shown in the accompanying drawings are not limited to a single bus or a single type of bus.

[0175] The aforementioned storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. The storage medium can be any available medium that can be accessed by a general-purpose or special-purpose computer.

[0176] An exemplary storage medium is coupled to a processor, enabling the processor to read information from and write information to the storage medium. Alternatively, the storage medium can be an integral part of the processor. Both the processor and the storage medium can reside in an Application Specific Integrated Circuit (ASIC). Alternatively, the processor and storage medium can exist as discrete components in an electronic device or host device.

[0177] Those skilled in the art will understand that all or part of the steps of the above-described method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments; and the aforementioned storage medium includes various media capable of storing program code, such as ROM, RAM, magnetic disks, or optical disks.

[0178] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method for testing contact resistance, used to test the contact resistance of a MOS transistor, characterized in that, The MOS transistor operates in the linear region, and the method includes: Determine the functional relationship between the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor, wherein the first resistance value is the sum of the channel resistance and the contact resistance of the MOS transistor; Based on the aforementioned functional relationship, the contact resistance of the MOS transistor at each sampling temperature is determined; Based on the contact resistance of the MOS transistor at each sampling temperature, determine the calibration coefficient of the contact resistance at the current ambient temperature. The resistance value of the contact resistor at the current ambient temperature is determined based on the calibration coefficient, the resistance value per unit area of ​​the contact resistor, and the area of ​​the contact resistor; the determination of the calibration coefficient of the contact resistor at the current ambient temperature based on the resistance value of the MOS transistor at each sampling temperature includes: Based on the sampling temperatures and the contact resistance of the MOS transistor at the sampling temperatures, a resistance-temperature parameter relating the contact resistance to the temperature is determined. The calibration coefficient of the contact resistance at the current ambient temperature is obtained based on the preset standard temperature, the current ambient temperature, and the resistance temperature parameter.

2. The method according to claim 1, characterized in that, Determining the functional relationship between the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor includes: The first resistance of the MOS transistor at each sampling temperature was measured when the MOS transistor used different channel widths. Based on the first resistance value of the MOS transistor at each sampling temperature when the MOS transistor uses different channel widths, determine the functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor.

3. The method according to claim 1 or 2, characterized in that, The step of determining the contact resistance of the MOS transistor at each sampling temperature based on the functional relationship includes: Based on the aforementioned functional relationship, determine the function curves corresponding to the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a preset rectangular coordinate system; The contact resistance of the MOS transistor at each sampling temperature is determined based on the intercept of the function curve corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system; wherein, the contact resistance of the MOS transistor is not related to the channel width used by the MOS transistor.

4. The method according to claim 1, characterized in that, The step of obtaining the calibration coefficient of the contact resistance at the current ambient temperature based on the preset standard temperature, the current ambient temperature, and the resistance temperature parameter includes: The calibration coefficient Rt of the contact resistance at the current ambient temperature is obtained in the following manner: Rt = 1 + (Te - Tn) * Tc Where Te represents the current ambient temperature, Tn represents the standard temperature, and Tc represents the resistance temperature parameter.

5. The method according to claim 4, characterized in that, The contact resistance includes a first contact resistance and a second contact resistance, the first contact resistance being connected to the drain of the MOS transistor, and the second contact resistance being connected to the source of the MOS transistor. The step of determining the resistance value of the contact resistor at the current ambient temperature based on the calibration coefficient, the resistance value per unit area of ​​the contact resistor, and the area of ​​the contact resistor includes: Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance, a first target resistance value of the first contact resistance at the current ambient temperature is determined. Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance, a second target resistance value of the second contact resistance at the current ambient temperature is determined.

6. The method according to claim 5, characterized in that, The step of determining the first target resistance value of the first contact resistance at the current ambient temperature based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance includes: The first target resistance value Rdc is determined in the following manner: Rdc = Rc * Rt * S1 The step of determining the second target resistance value of the second contact resistance at the current ambient temperature based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance includes: The second target resistance value Rsc is determined in the following manner: Rsc = Rc * Rt *S2 Wherein, Rc represents the resistance per unit area of ​​the contact resistance at the standard temperature, Rt represents the calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

7. A contact resistance testing apparatus for testing the contact resistance of a MOS transistor, characterized in that, The MOS transistor operates in the linear region, and the device includes: The first processing module is used to determine the functional relationship between the first resistance value of the MOS transistor and the channel width of the MOS transistor at various sampling temperatures, wherein the first resistance value is the sum of the channel resistance and the contact resistance of the MOS transistor. The second processing module is used to determine the contact resistance of the MOS transistor at each sampling temperature based on the functional relationship. The first calculation module is used to determine the calibration coefficient of the contact resistance at the current ambient temperature based on the resistance value of the contact resistance of the MOS transistor at each sampling temperature. The second calculation module is used to determine the resistance value of the contact resistance at the current ambient temperature based on the calibration coefficient, the unit area resistance value of the contact resistance, and the area of ​​the contact resistance; the first calculation module is used for: Based on the sampling temperatures and the contact resistance of the MOS transistor at the sampling temperatures, a resistance-temperature parameter relating the contact resistance to the temperature is determined. The calibration coefficient of the contact resistance at the current ambient temperature is obtained based on the preset standard temperature, the current ambient temperature, and the resistance temperature parameter.

8. The apparatus according to claim 7, characterized in that, The first processing module is used for: The first resistance of the MOS transistor at each sampling temperature was measured when the MOS transistor used different channel widths. Based on the first resistance value of the MOS transistor at each sampling temperature when the MOS transistor uses different channel widths, determine the functional relationship between the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor.

9. The apparatus according to claim 7 or 8, characterized in that, The second processing module is used for: Based on the aforementioned functional relationship, determine the function curves corresponding to the first resistance value of the MOS transistor at various sampling temperatures and the channel width of the MOS transistor in a preset rectangular coordinate system; The contact resistance of the MOS transistor at each sampling temperature is determined based on the intercept of the function curve corresponding to the first resistance value of the MOS transistor at each sampling temperature and the channel width of the MOS transistor in a preset rectangular coordinate system; wherein, the contact resistance of the MOS transistor is not related to the channel width used by the MOS transistor.

10. The apparatus according to claim 7, characterized in that, The first calculation module is used for: The calibration coefficient Rt of the contact resistance at the current ambient temperature is obtained in the following manner: Rt = 1 + (Te - Tn) * Tc Where Te represents the current ambient temperature, Tn represents the standard temperature, and Tc represents the resistance temperature parameter.

11. The apparatus according to claim 9, characterized in that, The contact resistance includes a first contact resistance and a second contact resistance, the first contact resistance being connected to the drain of the MOS transistor, and the second contact resistance being connected to the source of the MOS transistor. The second calculation module is used for: Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the first contact resistance, a first target resistance value of the first contact resistance at the current ambient temperature is determined. Based on the calibration coefficient, the resistance per unit area of ​​the contact resistance at the standard temperature, and the area of ​​the second contact resistance, a second target resistance value of the second contact resistance at the current ambient temperature is determined.

12. The apparatus according to claim 11, characterized in that, The second calculation module is used for: The first target resistance value Rdc is determined in the following manner: Rdc = Rc * Rt * S1 The second target resistance value Rsc is determined in the following manner: Rsc = Rc * Rt *S2 Wherein, Rc represents the resistance per unit area of ​​the contact resistance at the standard temperature, Rt represents the calibration coefficient, S1 represents the area of ​​the first contact resistance, and S2 represents the area of ​​the second contact resistance.

13. An electronic device, characterized in that, include: At least one processor and memory; The memory stores computer-executed instructions; The at least one processor executes computer execution instructions stored in the memory, causing the at least one processor to perform the contact resistance test method as described in any one of claims 1 to 6.

14. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, implement the contact resistance testing method as described in any one of claims 1 to 6.

15. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the contact resistance testing method according to any one of claims 1 to 6.

Images