Apparatus for post-exposure bake

Abstract

Embodiments described herein relate to methods and apparatus for performing immersion field-guided post-exposure bake processes. Embodiments of apparatus described herein include a chamber body that defines a processing volume. An electrode can be disposed adjacent to the processing volume and provide a processing fluid to the processing volume via a plurality of fluid conduits to facilitate an immersion field-guided post-exposure bake process. Post-processing chambers for rinsing, developing, and drying substrates are also provided.

Description

[0001] This application is a divisional application of the patent application with application number 201780040961.7, filed on May 2, 2017, and titled "Apparatus for Post-Exposure Bake". TECHNICAL FIELD

[0002] The present disclosure relates generally to methods and apparatus for processing a substrate, and more particularly to methods and apparatus for performing a post-exposure bake process with immersion field guiding. BACKGROUND

[0003] Integrated circuits have evolved into complex devices, which can include millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Photolithography is a process that can be used to form the components on the chip. Generally, the process of photolithography involves several basic stages. Initially, a layer of photoresist is formed on a substrate. A chemically amplified photoresist can include a resist resin and a photoacid generator. Upon exposure to electromagnetic radiation in a subsequent exposure stage, the photoacid generator changes the solubility of the photoresist in a development process. The electromagnetic radiation can have any suitable wavelength, for example, 193 nm ArF laser, electron beam, ion beam, or other suitable source.

[0004] During the exposure stage, a photomask or reticle can be used to selectively expose certain areas of the substrate to electromagnetic radiation. Other exposure methods can be maskless exposure methods. Exposure to light can decompose the photoacid generator, generating acid and creating a latent acid image in the resist resin. After exposure, the substrate can be heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin, thereby changing the solubility of the resist during a subsequent development process.

[0005] After post-exposure bake, the substrate, particularly the photoresist layer, can be developed and rinsed. Depending on the type of photoresist used, the areas of the substrate exposed to electromagnetic radiation can be resistant to removal or more easily removed. After development and rinsing, a wet or dry etching process is used to transfer the pattern of the mask to the substrate.

[0006] The development of wafer designs continues to demand faster circuits and greater circuit density. The demand for greater circuit density requires the reduction in size of integrated circuit components. As the size of integrated circuit components is reduced, more elements need to be placed in a given area of a semiconductor integrated circuit. Therefore, the photolithography process must transfer even smaller features onto the substrate and must do so precisely, accurately, and without damage. In order to precisely and accurately transfer features onto the substrate, high resolution photolithography can use a light source that provides small wavelength radiation. Small wavelengths help reduce the minimum printable size on the substrate or wafer. However, small wavelength photolithography presents problems such as low throughput, increased line edge roughness, and / or reduced resist sensitivity.

[0007] In a recent development, an electrode assembly is used to generate an electric field to a photoresist layer disposed on a substrate prior to or after an exposure process in order to change the chemical properties of a portion of the photoresist layer in order to improve photolithography exposure / development resolution where electromagnetic radiation is delivered to the portion of the photoresist layer. However, challenges in implementing such a system have not been fully overcome.

[0008] Therefore, there is a need for improved methods and apparatus for improved post exposure bake processes for immersion field guided. SUMMARY

[0009] In one embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume. A long axis of the processing volume is oriented vertically and a short axis of the processing volume is oriented horizontally. A moveable door is coupled to the chamber body and a first electrode is coupled to the door. The first electrode is configured to support a substrate thereon. A second electrode is coupled to the chamber body and the second electrode at least partially defines the processing volume. A plurality of first fluid ports are formed in a sidewall of the chamber body adjacent to the processing volume and a plurality of second fluid ports are formed in the sidewall of the chamber body adjacent to the processing volume and opposite the plurality of first fluid ports.

[0010] In another embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume and a rotatable pedestal disposed within the processing volume. A fluid delivery arm is configured to deliver a cleaning fluid to the processing volume. The apparatus further includes a shield capable of being raised and lowered by a motor and the shield is disposed radially outward of the rotatable pedestal.

[0011] In yet another embodiment, a method of processing a substrate is provided. The method includes positioning a substrate adjacent to a processing volume in a processing chamber and delivering a process fluid to the processing volume at a first flow rate. After filling a portion of the processing volume with the process fluid, the process fluid is delivered to the processing volume at a second flow rate that is greater than the first flow rate. After completely filling the processing volume with the process fluid, the process fluid is delivered to the processing volume at a third flow rate that is less than the second flow rate. During delivery of the process fluid to the processing volume at the third flow rate, an electric field is generated in the processing volume. BRIEF DESCRIPTION OF DRAWINGS

[0012] So that the above-recited features of the present disclosure can be understood in detail, a more particular description will be rendered by reference to implementations, some of which are illustrated in the drawings. It is to be noted, however, that the appended drawings will be described with the intent that they be not limiting of the scope. It should be understood that these implementations can be combined in whole or in part.

[0013] Figure 1 A schematic cross-sectional view of a processing chamber according to implementations described herein is depicted.

[0014] Figure 2 A detailed view of a portion of a processing chamber according to implementations described herein is depicted. Figure 1

[0015] Figure 3 A schematic side view of various components of a processing chamber according to implementations described herein is depicted. Figure 1

[0016] Figure 4 A post-processing chamber according to implementations described herein is depicted.

[0017] Figure 5 Operations of a method for processing a substrate according to implementations described herein are depicted.

[0018] To facilitate the understanding of this disclosure, like reference numerals have been used, where possible, to designate identical elements common to the figures. It is contemplated that elements and features of one implementation can be beneficially incorporated into other implementations, without further recitation. DETAILED DESCRIPTION

[0019] Figure 1 ​​A schematic cross-sectional view of a processing chamber 100 according to embodiments described herein is illustrated. In one embodiment, the processing chamber 100 is configured for performing an immersion field guided post-exposure bake (iFGPEB) process. The chamber 100 is positioned in a vertical orientation such that when processing a substrate, a long axis of the substrate is oriented vertically and a short axis of the substrate is oriented horizontally. The chamber 100 includes a chamber body 102 made of a metallic material, such as aluminum, stainless steel, and alloys and combinations thereof. Alternatively, the chamber body 102 is fabricated from a polymeric material, such as polytetrafluoroethylene (PTFE), or a high temperature plastic, such as polyether ether ketone (PEEK).

[0020] A processing volume 104 is at least partially defined in the body 102. For example, a sidewall 148 of the body 102 defines a diameter of the processing volume 104. A long axis of the processing volume 104 is oriented vertically and a short axis of the processing volume 104 is oriented horizontally. A plurality of first fluid ports 126 are formed in the chamber body 102 through the sidewall 148. A plurality of second fluid ports 128 are also formed in the sidewall 148 of the chamber body 102 opposite the plurality of first fluid ports 126. The plurality of first fluid ports 126 are in fluid communication with a process fluid source 132 via a first conduit 134. The plurality of second fluid ports 128 are in fluid communication with a fluid outlet 136 via a second conduit 138. The process fluid source 132, alone or in combination with other equipment, is configured to pre-heat the process fluid to a temperature between about 70 °C and about 130 °C, such as about 110 °C, before the fluid enters the processing volume 104.

[0021] In one embodiment, a purge gas source 150 is also in fluid communication with the processing volume 104 via the first fluid conduit 134 and the plurality of first fluid ports 126. The gas provided by the purge gas source 150 can include nitrogen, hydrogen, inert gases, and the like, to purge the processing volume 104 during or after the iFGPEB process. When desired, the purge gas can be exhausted from the processing volume 104 via the fluid outlet 136.

[0022] A door 106 is operably coupled to the chamber body 102. In the illustrated embodiment, the door 106 is oriented in a processing position such that the door 106 is disposed adjacent and abutting the chamber body 102. The door 106 is formed from a material similar to the material selected for the chamber body 102. Alternatively, the chamber body can be formed from a first material, such as a polymeric material, and the door 106 can be formed from a second material, such as a metallic material, that is different from the first material. A shaft 107 extends through the door 106 and provides an axis (i.e., a Z-axis) about which the door 106 rotates to open and close the door 106.

[0023] The door 106 can be coupled to a track (not shown) and the door 106 is configured to translate along the track along the X-axis. A motor (not shown) can be coupled to the door 106 and / or the track to facilitate movement of the door 106 along the X-axis. Although the door 106 is depicted in a closed processing position, opening and closing of the door 106 can be performed by moving the door 106 along the X-axis away from the chamber body 102 prior to rotating the door 106 about the Z-axis. For example, the door 106 can be rotated about 90° from the depicted processing position to a loading position so that positioning of the substrate 110 on the first electrode 108 can be performed with reduced likelihood of substrate breakage during loading.

[0024] The back plate 112 is coupled to the door 106 and the first electrode 108 is coupled to the back plate 112. Depending on the desired implementation, the back plate 112 is formed of a material similar to the door 106 or the chamber body 102. The first electrode 108 can be formed of a conductive metallic material. Further, the material used for the first electrode 108 can be a non-oxidizing material. The material selected for the first electrode 108 provides the desired current uniformity and low resistance across the surface of the first electrode 108. In certain embodiments, the first electrode 108 is a segmented electrode configured to introduce voltage non-uniformity across the surface of the first electrode 108. In this embodiment, multiple power sources are used to power different segments of the first electrode 108.

[0025] The first electrode 108 is sized to accommodate attachment of the substrate 110 thereon. The first electrode 108 is also sized to allow positioning adjacent to the chamber body 102 and the processing volume 104. In one embodiment, the first electrode 108 is fixedly coupled to the back plate 112 and the door 106. In another embodiment, the first electrode 108 is rotatably coupled to the back plate 112 and the door 106. In this embodiment, a motor 109 is coupled to the door 106 and is configured to impart rotational motion on the back plate 112 or the first electrode 108. In one embodiment, the first electrode 108 is configured as a ground electrode.

[0026] A vacuum source 116 is in fluid communication with the substrate receiving surface of the first electrode 108. The vacuum source 116 is coupled to a conduit 114 that extends from the vacuum source 116 through the door 106, the back plate 112, and the first electrode 108. Generally, the vacuum source 116 is configured to vacuum attract the substrate 110 to the first electrode 108.

[0027] A heat source 118, a temperature sensing device 120, a power source 122, and a sensing device 124 are coupled to the first electrode 108. The heat source 118 provides power to one or more heating elements, such as resistive heaters, disposed within the first electrode 108. It is also contemplated that the heat source 118 can provide power to heating elements disposed within the backplate 112. The heat source 118 is generally configured to heat the first electrode 108 and / or or the backplate 112 to facilitate preheating of the fluid during an iFGPEB process. In addition to or different from preheating the process fluid, the heat source 118 can also be used to maintain a desired temperature of the process fluid during substrate processing. In one implementation, the heat source 118 is configured to heat the first electrode 108 to a temperature between about 70 °C and about 130 °C, such as about 110 °C.

[0028] The temperature sensing device 120, such as a thermocouple or the like, is communicatively coupled to the heat source 118 to provide temperature feedback and facilitate heating of the first electrode 108. The power source 122 is configured to supply, for example, between about 1 V and about 20 kV to the first electrode 108. Depending on the type of process fluid used, the current generated by the power source 122 can be on the order of tens of nanoamperes to hundreds of milliampere. In one implementation, the power source 122 is configured to generate an electric field ranging from about 1 kV / m to about 2 MV / m. In some implementations, the power source 122 is configured to operate in a voltage-controlled or current-controlled mode. In both modes, the power source can output AC, DC, and / or pulsed DC waveforms. If desired, square or sinusoidal waves can be used. The power source 122 can be configured to provide power at a frequency between about 0.1 Hz and about 1 MHz, such as about 5 kHz. The duty cycle of the pulsed DC power or AC power can be between about 5% and about 95%, such as between about 20% and about 60%.

[0029] The rise and fall times of the pulsed DC power or AC power can be between about 1 ns and about 1000 ns, such as between about 10 ns and about 500 ns. The sensing device 124, such as a voltmeter or the like, is communicatively coupled to the power source 122 to provide electrical feedback and facilitate control of the power applied to the first electrode 108. The sensing device 124 can also be configured to sense the current applied to the first electrode 108 via the power source 122.

[0030] The second electrode 130 is adjacent to and coupled to the chamber body 102 of the processing volume 104, and partially defines the processing volume 104. Similar to the first electrode 108, the second electrode 130 is coupled to a heat source 140, a temperature sensing device 142, a power supply 144, and a sensing device 146. The heat source 140, temperature sensing device 142, power supply 144, and sensing device 146 may operate similarly to heat source 118, temperature sensing device 120, power supply 122, and sensing device 124. In one embodiment, the second electrode 130 is an actively powered electrode, while the first electrode 108 is a ground electrode. As a result of the above electrode arrangement, the acid generated by the resist provided on the substrate 110 during exposure can be modulated during iFGPEB processing to improve patterning and resist deprotection properties.

[0031] Figure 2 Illustrations of embodiments described herein Figure 1 A detailed view of a portion of the processing chamber 100. The processing volume 104 has a width 214 defined between the substrate 110 and the second electrode 130. In one embodiment, the width 214 of the processing volume 104 is between about 1.0 mm and about 10 mm, such as between about 4.0 mm and about 4.5 mm. The relatively small gap between the substrate 110 and the second electrode 130 reduces the volume of the processing volume 104, which allows for the use of a reduced amount of processing fluid during iFGPEB processing. Furthermore, the width 214 defining the distance between the second electrode 130 and the substrate is configured to provide a substantially uniform electric field across the entire surface of the substrate 110. The substantially uniform field provides improved patterning features produced by the iFGPEB processing. Another advantage of the gap with width 214 is the reduction in the voltage required to generate the desired electric field.

[0032] During operation, the processing volume 104 is filled with processing fluid during iFGPEB processing. To reduce the possibility of processing fluid leakage out of the processing volume, multiple O-rings are used to maintain the fluid tightness integrity of the processing volume. A first O-ring 202 is disposed in the first electrode 108 on the substrate receiving surface of the first electrode 108. The first O-ring 202 can be positioned radially inward from the outer diameter of the substrate 110 on the first electrode.

[0033] In one example, a first O-ring 202 is positioned on the first electrode 108 at a distance between approximately 1 mm and approximately 10 mm radially inward from the outer diameter of the substrate 110. The first O-ring is positioned to contact the back side of the substrate 110 when the substrate is adsorbed onto the first electrode 108. When the substrate 110 is in the processing position shown, the first surface 206 of the sidewall 148 is shaped and sized to contact the edge region of the substrate 110.

[0034] In one embodiment, a first O-ring 202 is disposed in the first electrode 108 opposite to a first surface 206 of the sidewall 148. It is envisioned that the first O-ring 202 prevents processing fluid from leaking from the processing volume 104 into areas behind the substrate 110, such as the substrate support surface of the first electrode 108. Advantageously, this maintains vacuum adsorption of the substrate 110 and prevents processing fluid from reaching the vacuum source 116.

[0035] The first electrode 108 has a flange 210 disposed radially outside the first O-ring. The flange 210 is disposed radially outward from the position of the first O-ring 202. A second O-ring 204 is coupled to the first electrode 108 radially outside the flange 210. The second surface 208 of the sidewall 148 is shaped and sized to be adjacent to and extend radially inward from the outer diameter of the first electrode 108 to contact the first electrode 108. In one embodiment, when the substrate 110 is positioned in the processing position, the second O-ring 204 is configured to contact the second surface 208 of the sidewall 148. It is contemplated that the second O-ring 204 can prevent processing fluid from leaking from the processing volume 108 beyond the outer diameter of the first electrode 108.

[0036] A third O-ring 212 is coupled to the second electrode 130 along the outer diameter of the second electrode 130. The third O-ring 212 is also configured to contact the sidewall 148 of the chamber body 102. The third O-ring 212 is configured to prevent process fluid from flowing beyond the second electrode 130. Each O-ring 202, 204, 212 is formed of an elastic material (such as a polymer or the like). In one embodiment, the O-rings 202, 204, 212 have a circular cross-section. In another embodiment, the O-rings 202, 204, 212 have a non-circular cross-section, such as a triangular cross-section or the like. It is also contemplated that each of the O-rings 202, 204, 212 is subjected to a compressive force suitable for preventing process fluid from exceeding the O-rings 202, 204, 212 and suitable for fluidly sealing the process volume 104.

[0037] Figure 3 Illustrations of embodiments described herein Figure 1 A schematic side view of various components of the processing chamber 100 is shown. A processing volume 104 is illustrated, in which a plurality of first fluid ports 126 and a plurality of second fluid ports 128 are formed. A plurality of first channels 302 are coupled between the plurality of first fluid ports 126 and a first conduit 134. A plurality of second channels 304 are coupled between the plurality of second fluid ports 128 and the second conduit 138.

[0038] Although 10 channels of the plurality of first channels 302 are illustrated, it is contemplated that between about 5 channels and about 30 channels can be implemented, for example, between about 9 channels and about 21 channels. Similarly, between about 5 channels and about 30 channels, for example, between about 9 channels and about 21 channels, can be used for the plurality of second channels 304. The number of channels 302, 304 is selected to achieve a suitable fluid flow rate during filling of the process volume 104. The channels 302, 304 are also configured to maintain the rigidity of the process volume 104 when the first electrode 108 and the substrate 110 are positioned against the first surface 206 of the chamber body 102. In one embodiment, 9 first channels 302 and 9 second channels 304 are coupled to the process volume 104. In another embodiment, 21 first channels 302 and 21 second channels 304 are coupled to the first process volume 104.

[0039] The plurality of first channels 302 and the plurality of second channels 304 are formed in the body 102 of the process chamber 100. Each of the plurality of first and second channels 302, 304 has a diameter between about 3.0 mm and about 3.5 mm, such as about 3.2 mm, at the first fluid port 126 and the second fluid port 128, respectively. In another embodiment, the diameter of each channel along the diameter of the process volume 104 is different. In one embodiment, the channels of the plurality of first channels 302 are uniformly spaced across the diameter of the process volume 104. Similarly, the channels of the plurality of second channels 304 are uniformly spaced across the diameter of the process volume 104. It is also contemplated that the channels of the plurality of first and second channels 302, 304 can also be non-uniformly spaced across the diameter of the process volume 104.

[0040] The spacing of the channels of the plurality of first and second channels 302, 304 is configured to reduce turbulent flow of the process fluid into and out of the process volume 104. Because turbulent flow creates bubbles in the process fluid and the bubbles act as insulators in a subsequently applied electric field, measures are taken to reduce the formation of bubbles. As described in detail below, the flow rate of the process fluid is regulated in conjunction with the design of the plurality of first and second channels 302, 304 to reduce turbulent flow.

[0041] The flow path of the process fluid originates from the process fluid source 132 and proceeds through the first conduit 134 into the plurality of first channels 302. The fluid exits the plurality of first channels 302 through the first fluid port 126 into the process volume 104. Once the process volume 104 is filled with process fluid, the process fluid exits the process volume 104 through the second fluid port 128 into the plurality of second channels 304. The process fluid continues into the second conduit 138 and is ultimately removed from the process chamber 100 in the fluid outlet 136.

[0042] In one operational embodiment, a first flow rate used to fill the process volume 104 with process fluid prior to the application of the electric field is between about 5 L / min and about 10 L / min. Once the process volume 104 is filled with process fluid, the electric field is applied and a second flow rate of process fluid between about 0 L / min and about 5 L / min is utilized during the iFGPEB process. The process fluid fill and process time is between about 30 seconds and about 90 seconds, such as about 60 seconds. In one embodiment, the process fluid continues to flow during the iFGPEB process. In this embodiment, the volume of the process volume 104 is replaced between about 1 and about 10 times per substrate process. In another embodiment, the process fluid is primarily static during the process. In this embodiment, the volume of the process volume 104 is not replaced during the substrate process of each substrate.

[0043] In another operational embodiment, the process volume 104 is initially filled using a first flow rate. The first flow rate is less than 5 L / min for an amount of time to fill the process volume 104 such that the first fluid port 126 is flooded. The remaining portion of the process volume 104 is then filled using a second flow rate that is greater than 5 L / min. A third flow rate that is less than 5 L / min is used during the application of the electric field in the iFGPEB process. The flow rate modulation between the first and second flow rates is configured to reduce turbulence of the fluid within the process volume 104 and reduce or eliminate the formation of bubbles therein. However, if bubbles are formed, the buoyancy of the bubbles enables the bubbles to escape from the process volume 104 via the second fluid port 128, thereby minimizing the insulating effect of the bubbles on the electric field during the iFGPEB process. Thus, a more uniform electric field can be achieved to improve the iFGPEB process.

[0044] Figure 4 A post-process chamber 400 according to embodiments described herein is illustrated. After an iFGPEB process is performed on a substrate in the process chamber 100, the substrate is transferred to the post-process chamber 400. The post-process chamber 400 includes a chamber body 402 that defines a process volume 404 and a pedestal 408 disposed in the process volume 404. A substrate 406 positioned on the pedestal 408 is post-processed by cooling and rinsing the substrate 406. By combining cooling and rinsing, the delay from baking to cooling in the substrate process is minimized.

[0045] When the substrate 406 is positioned on the pedestal 408, the substrate is vacuum chucked by applying a vacuum from a vacuum source 414. Once the substrate 406 is chucked, cooling of the substrate 406 is initiated. A fluid conduit 410 is formed in the pedestal 408 and the fluid conduit 410 is in fluid communication with a cooling fluid source 412. Cooling fluid flows through the fluid conduit 410 to cool the substrate 406.

[0046] During cooling, the substrate 406 is also rinsed to remove any remaining process fluid still present on the substrate surface. The rinsing fluid is dispensed from a fluid delivery arm 418, which can include fluid delivery nozzles 420, onto the device side of the substrate 406. The rinsing fluid, such as deionized water or the like, is provided from a rinsing fluid source 422 through the arm 418 and nozzles 420.

[0047] After rinsing and cooling, the substrate 406 is spin dried by rotating the pedestal 408. The pedestal 408 is coupled to a power source 416 that is capable of rotating the pedestal 408. During the spin dry of the substrate 406, the shield 424 is raised to collect fluid spun off of the substrate 406. The shield 424 is annular in shape and sized to have an inner diameter that is larger than the diameter of the pedestal 408. The shield 424 is also disposed radially outward of the pedestal 408. The shield 424 is coupled to a motor 428 that raises and lowers the shield 424 such that the shield 424 extends over the substrate 406 during the spin dry. Fluid collected by the shield 424 during the spin dry is removed from the processing volume 404 via a drain 426. It should be noted that the shield 424 can be disposed in a lowered position during the cooling and rinsing of the substrate 406 and then raised during the spin dry of the substrate 406. The shield 424 can also be lowered during the loading and unloading of the substrate 406.

[0048] Once the substrate 406 has dried, the resist on the substrate 406 is developed by applying a developer, such as tetramethylammonium hydroxide (TMAH). In one embodiment, the developer is dispensed from the arm 418 and nozzles 420. After development, the substrate 406 can optionally be rinsed with deionized water and dried again to prepare the substrate 406 for subsequent processing.

[0049] Figure 5 Operations of a method 500 for processing a substrate according to embodiments described herein are illustrated. At operation 510, a substrate is positioned near or within a processing volume of a processing chamber, such as the processing chamber 100. The processing volume is filled with a process fluid at operation 520, and an iFGPEB process is performed at operation 530. The process fluid is removed from the processing volume at operation 540, and the substrate is transferred to a post-processing chamber, such as the post-processing chamber 400, at operation 550. Optionally, the substrate can be spin dried during operation 540 to prevent spillage of the process fluid during substrate processing.

[0050] At operation 560, the substrate is rinsed with a cleaning fluid to remove the processing fluid from the substrate. In some embodiments, operation 560 can also include a spin-dry of the substrate. At operation 570, the resist disposed on the substrate is developed, and at operation 580, the substrate is again rinsed with a cleaning fluid. At operation 590, the substrate is spin-dried and prepared for subsequent processing.

[0051] In summary, apparatuses and methods for improved iFGPEB processing are provided. The processing chambers described herein are capable of efficiently utilizing processing fluid and improving the application of electric fields during iFGPEB operations. By utilizing apparatuses capable of simultaneous cooling and rinsing operations, post processing of the substrate is also improved by reducing the delay from bake to cool. Thus, iFGPEB processing operations can be improved by utilizing the apparatuses and methods described herein.

[0052] While the foregoing is related to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: A chamber body defining a processing volume, wherein the long axis of the processing volume is oriented vertically and the short axis of the processing volume is oriented horizontally; A movable door is coupled to the main body of the chamber, and the door is rotatable about an axis; A first electrode is coupled to the gate and a first heat source, and a seal is coupled to the first electrode, wherein when the front side of the substrate is disposed adjacent to the processing volume, the seal is configured to contact the back side of the substrate. A second electrode is coupled to the chamber body and a second heat source, the second electrode at least partially defining the processing volume; A backplate is disposed between the first electrode and the door; Multiple first fluid ports are formed in the sidewall of the chamber body adjacent to the processing volume; and A plurality of second fluid ports are formed in the sidewall of the chamber body adjacent to the processing volume and opposite to the plurality of first fluid ports.

2. The device of claim 1, further comprising: The processing fluid source is in communication with the processing volume fluid via a plurality of first channels and the plurality of first fluid ports.

3. The device as claimed in claim 2, further comprising: The fluid outlet is in fluid communication with the processing volume via a plurality of second channels and the plurality of second fluid ports.

4. The device of claim 1, wherein the first electrode is configured to vacuum-adsorb the substrate thereon.

5. The device of claim 1, wherein the chamber body is formed of polytetrafluoroethylene.

6. The apparatus of claim 1, wherein the plurality of first fluid ports are uniformly distributed across the diameter of the processing volume.

7. The apparatus of claim 6, wherein the plurality of second fluid ports are uniformly distributed across the diameter of the processing volume.

8. The device of claim 1, wherein the seal is positioned on the first electrode adjacent to a region corresponding to the outer diameter of the substrate.

9. The device of claim 1, further comprising: A second seal is coupled to the first electrode adjacent to the outer diameter of the first electrode, wherein the second seal contacts the surface of the sidewall of the chamber body.

10. The device of claim 9, further comprising: A third seal is coupled to the outer diameter of the second electrode, wherein the third seal is positioned to contact the sidewall of the chamber body.

11. A substrate processing apparatus, comprising: A chamber body defining a processing volume, wherein the long axis of the processing volume is oriented vertically and the short axis of the processing volume is oriented horizontally; A movable door is coupled to the main body of the chamber, and the door is rotatable about an axis; A first electrode is coupled to the gate and a first heat source, and the first electrode is configured to contact the back side of the substrate and vacuum adsorb the substrate onto the first electrode. A backplate is disposed between the first electrode and the door; A second electrode is coupled to the chamber body and a second heat source, and the second electrode at least partially defines the processing volume; A seal, coupled to the outer diameter of the second electrode, wherein the seal is positioned to contact the sidewall of the chamber body; Multiple first fluid ports are formed in the sidewall of the chamber body adjacent to the processing volume; and A plurality of second fluid ports are formed in the sidewall of the chamber body adjacent to the processing volume and opposite to the plurality of first fluid ports.

12. A substrate processing apparatus, comprising: A chamber body, partially defining a processing volume and having a first sealing surface, wherein the long axis of the processing volume is substantially vertically oriented and the short axis of the processing volume is substantially horizontally oriented; A door is movably coupled to the chamber body, and the door is rotatable about an axis; A first electrode, coupled to the gate and a first heat source, having a second sealing surface configured to adjoin the first sealing surface and fluidly seal the processing volume; A backplate is disposed between the first electrode and the door; The second electrode is coupled to the chamber body and the second heat source, and the second electrode is disposed on the radially inner side of the first sealing surface; Multiple first fluid ports are formed in the sidewalls of the chamber body and along the periphery of the processing volume; and A plurality of second fluid ports are formed in the sidewall of the chamber body and along the periphery of the processing volume, the plurality of second fluid ports being configured to be opposite to the plurality of first fluid ports.

13. The device of claim 12, wherein the chamber body is formed of polyetheretherketone (PEEK).

14. The apparatus of claim 12, further comprising: The conduit extends through the door, the backplate, and the first electrode.

15. The device of claim 14, wherein the first electrode is configured to vacuum adsorb a substrate thereon.

16. The apparatus of claim 12, further comprising: A plurality of first channels are formed in the chamber body, the plurality of first channels being fluidly coupled between the plurality of first fluid ports and the exterior of the chamber body.

17. The apparatus of claim 16, further comprising: A plurality of second channels are formed in the chamber body, the plurality of second channels being fluidly coupled between the plurality of second fluid ports and the exterior of the chamber body.

18. The apparatus of claim 12, wherein the plurality of first fluid ports are uniformly distributed across the diameter of the processing volume.

19. The apparatus of claim 12, wherein the plurality of second fluid ports are uniformly distributed across the diameter of the processing volume.

20. A substrate processing apparatus, comprising: A chamber body, partially defining a processing volume and having a first sealing surface, wherein the long axis of the processing volume is substantially vertically oriented and the short axis of the processing volume is substantially horizontally oriented; A door is movably coupled to the chamber body, and the door is rotatable about an axis; A first electrode, coupled to the gate and a first heat source, having a second sealing surface configured to abut the first sealing surface and fluidly seal the processing volume, wherein the diameter of the first electrode is larger than the diameter of the processing volume; A backplate is disposed between the first electrode and the door; A second electrode is coupled to the chamber body and a second heat source. The second electrode is disposed radially inside the first sealing surface and has a diameter smaller than the diameter of the processing volume. Multiple first fluid ports are formed in the sidewalls of the chamber body and along the periphery of the processing volume; and A plurality of second fluid ports are formed in the sidewall of the chamber body and along the periphery of the processing volume, the plurality of second fluid ports being configured to be opposite to the plurality of first fluid ports.

21. The device of claim 20, wherein the chamber body is formed of polyetheretherketone (PEEK).

22. The apparatus of claim 20, further comprising: A conduit extends through the door, the backplate, and the first electrode, and is fluidly coupled to a vacuum source.

23. The apparatus of claim 20, further comprising: A plurality of first channels are formed in the chamber body, the plurality of first channels being fluidly coupled between the plurality of first fluid ports and the exterior of the chamber body.

24. The apparatus of claim 23, further comprising: A plurality of second channels are formed in the chamber body, the plurality of second channels being fluidly coupled between the plurality of second fluid ports and the exterior of the chamber body.

25. The apparatus of claim 20, wherein: The plurality of first fluid inlets are uniformly distributed across the diameter of the processing volume; and wherein: The plurality of second fluid ports are uniformly distributed across the diameter of the processing volume.

26. A substrate processing apparatus, comprising: A chamber body, partially defining a processing volume and having a first sealing surface, wherein the long axis of the processing volume is substantially vertically oriented and the short axis of the processing volume is substantially horizontally oriented; A door is movably coupled to the chamber body, and the door is movable about an axis; A first electrode coupled to the gate and a first heat source, the first electrode having a second sealing surface configured to abut the first sealing surface and fluidly seal the processing volume, the diameter of the first electrode being larger than the diameter of the processing volume, and the first electrode being configured to vacuum adsorb a substrate thereon. A backplate is disposed between the first electrode and the door; A second electrode is coupled to the chamber body and a second heat source. The second electrode is disposed radially inside the first sealing surface and has a diameter smaller than the diameter of the processing volume. Multiple first fluid ports are formed in the sidewalls of the chamber body and along the periphery of the processing volume; and A plurality of second fluid ports are formed in the sidewall of the chamber body and along the periphery of the processing volume, the plurality of second fluid ports being configured to be opposite to the plurality of first fluid ports.

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