Ion conductor integrated circuits and their preparation methods and applications

Abstract

The present invention relates to the fields of integrated circuits, new materials, and electronic information, and provides ion conductor integrated circuits, preparation methods, and applications. These integrated circuits are capable of producing smaller and thinner integrated circuits with faster ion transmission rates, higher sensitivity, and lower power consumption. The atomic-scale ion conductor integrated circuits manufactured by the present invention not only have high integration density and address issues such as size effects and quantum mechanical effects in integrated circuits, but also offer new ideas for materials used in large-scale sensors or other key components of integrated circuits. The present invention utilizes materials such as atomic-scale boron nitride as the core material for ion conductor integrated circuits, which exhibit excellent electrical insulation, thermal conductivity, and chemical corrosion resistance. Furthermore, the materials are low-cost, have mature manufacturing processes, and are easily manufactured, making them very promising for commercial use.

Description

Technical Field

[0001] The present invention relates to an ion conductor integrated circuit and a preparation method and application thereof, and belongs to the fields of integrated circuits, new materials and electronic information. Background Art

[0002] An integrated circuit (IC) is a circuit with specific functions that integrates a certain number of commonly used electronic components, such as resistors, capacitors, transistors, etc., as well as the connections between these components, through semiconductor technology.

[0003] An integrated circuit is an electronic device that is manufactured through semiconductor manufacturing processes such as oxidation, photolithography, diffusion, epitaxy, and aluminum evaporation. The semiconductors, resistors, capacitors and other components required to form a circuit with a certain function, as well as the connecting wires between them, are all integrated on a small piece of silicon wafer, and then welded and packaged in a tube shell.

[0004] Integrated circuits offer advantages such as small size, light weight, minimal lead wires and solder joints, long life, high reliability, and excellent performance. They are also low-cost and easy to mass-produce. They are widely used not only in industrial and civilian electronic equipment such as personal communication devices, televisions, and computers, but also in military, communications, and remote control applications. Using integrated circuits to assemble electronic devices can increase assembly density by tens to thousands of times compared to transistors, significantly improving the device's stable operating time.

[0005] Most applications in today's semiconductor industry are based on silicon-based integrated circuits. Integrated circuits can be categorized by manufacturing process as semiconductor integrated circuits and membrane integrated circuits. Membrane integrated circuits are further divided into thick-film integrated circuits and thin-film integrated circuits.

[0006] Currently, integrated circuits are primarily fabricated using semiconductors, which utilize the principle of electron-hole conduction in semiconductor materials. However, as the size of semiconductor integrated circuits continues to decrease, with commercial integrated circuits now reaching the 4-nanometer scale, the scaling effect brought about by Moore's Law has begun to emerge. Electrons at the nanoscale begin to exhibit quantum mechanical effects, such as electron tunneling. This severely hinders the performance of integrated circuits at nanoscale and significantly limits the development and application of next-generation integrated circuits.

[0007] Therefore, it is necessary to develop atomic-scale ion conductor integrated circuits to solve the above problems. Therefore, we propose ion conductor integrated circuits. Summary of the Invention

[0008] In view of this, the present invention aims to propose an ion conductor integrated circuit and its preparation method and application, and discovers that materials such as atomic layer thickness boron nitride are high-performance ion conductors, which can constitute a new type of ion conductor integrated circuit with extremely small size to solve the problems of size effect and quantum mechanical effect existing in integrated circuits at the nanoscale.

[0009] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0010] The present invention provides an ion conductor integrated circuit and a preparation method and application thereof, comprising a substrate (1), an atomic scale ion conductor (2), a metal layer (3), and a passivation layer (4), wherein the material of the atomic scale ion conductor (2) is hexagonal boron nitride.

[0011] As a preferred solution, the substrate (1) is mainly used as a substrate for an ion conductor integrated circuit, and silicon or silicon dioxide is usually used as the substrate material.

[0012] As a preferred solution, the substrate (1) is mainly used as a substrate for an ion conductor integrated circuit. Secondly, through processes such as exposure, annealing, and etching, a slot of a certain size is manufactured at the contact position between the atomic-scale ion conductor (2) and the substrate (1) according to application requirements.

[0013] As a preferred solution, a compound containing boron and nitrogen elements is used as a precursor to perform chemical vapor deposition on a substrate (1), and after the deposition is completed, a hexagonal boron nitride single crystal is obtained, and an atomic-scale ion conductor (2) is obtained to obtain a first-form ion conductor integrated circuit; based on the first-form ion conductor integrated circuit, the atomic-scale ion conductor (2) is etched using femtosecond laser processing technology and nonlinear laser processing technology to construct an atomic-scale ion transmission channel, thereby obtaining a second-form ion conductor integrated circuit.

[0014] As a preferred solution, a metal layer (3) is placed on the atomic-scale ion conductor (2), and the metal layer (3) includes a power amplifier.

[0015] As a preferred solution, the novel ion conductor integrated circuit is packaged via a passivation layer (4) directly above the substrate (1), the atomic-scale ion conductor (2) and the metal layer (3).

[0016] Boron nitride and other materials can be used as ion conductor materials for integrated circuits. A method of cutting and peeling off bulk boron nitride and other materials to form atomic-scale ion conductors can also be used. After that, the preparation process of related integrated circuits can be continued to place ion conductor materials, metal layers and passivation layers on the substrate in sequence to form a new type of ion conductor integrated circuit, which is not only smaller and thinner, but also has a fast ion transmission rate, high sensitivity and lower power consumption.

[0017] One or more technical solutions provided in the present invention have at least the following technical effects or advantages:

[0018] The present invention uses materials such as boron nitride as ion conductor materials for integrated circuits, which have the advantages of good insulation, high chemical inertness, high thermal stability, high thermal conductivity, and high hardness;

[0019] The present invention uses materials such as boron nitride as ion conductor materials for integrated circuits. Through artificial etching, it can be used as an ion-directed conductive material, enabling faster ion transmission, thereby enabling the preparation of a new type of ion conductor integrated circuit.

[0020] The novel ion conductor integrated circuit manufactured by the present invention not only has a high degree of integration and can solve the problems of size effect and quantum mechanical effect existing in integrated circuits, but also can provide new ideas for the materials of large-scale sensors or other key components of integrated circuits;

[0021] The present invention uses materials such as boron nitride as core components of ion conductor integrated circuits, which have low cost and mature manufacturing technology and have great prospects for commercial use.

[0022] The present invention manufactures a new type of ion conductor integrated circuit. By utilizing the characteristic that ions can be artificially controlled to conduct in materials such as boron nitride, the carrier of integrated circuit information transmission is changed from traditional electrons or holes to ions, thus becoming a new type of ion conductor integrated circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. They are used to explain the present invention together with the embodiments of the present invention and do not constitute a limitation of the present invention.

[0024] In the attached figure:

[0025] Figure 1 Schematic diagram of the structure of vacancy boron nitride in an embodiment of the present invention;

[0026] Figure 2 Schematic diagram of ion migration on the surface of vacant boron nitride in an embodiment of the present invention;

[0027] Figure 3 It is a schematic diagram of the overall structure of the novel boron nitride ion conductor integrated circuit in an embodiment of the present invention.

[0028] Numbers in the figure: 1, substrate; 2, atomic-scale ion conductor; 3, metal layer; 4, passivation layer. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0030] Example:

[0031] See also Figure 1 We studied the structural properties of vacancy boron nitride through first-principles methods, and verified the rationality and stability of its structure through other methods such as phonon mapping.

[0032] See also Figure 2 , explored the migration properties of ions on the surface of vacant boron nitride and found that by introducing vacancies on the surface of boron nitride, the conduction direction of ions can be changed. In this way, the conduction direction of ions in the material can be artificially controlled.

[0033] See also Figure 3 A novel boron nitride ion conductor integrated circuit provided by an embodiment of the present invention comprises a substrate (1), an atomic-scale ion conductor (2), a metal layer (3), and a passivation layer (4). The substrate (1) serves as the substrate of the ion conductor integrated circuit. Through etching and other processes, a slot for placing the atomic-scale ion conductor (2) is left on the substrate. Subsequently, boron nitride and other materials with an atomic layer thickness are deposited on the substrate (1) and the formed slot by chemical vapor deposition. Secondly, an ion-directed transmission channel is constructed on the surface of the boron nitride by artificial etching and prepared into an atomic-scale ion conductor (2). Finally, a metal layer (3) is placed on the atomic-scale ion conductor (2) and the novel boron nitride ion conductor integrated circuit is packaged by the passivation layer (4).

[0034] The working principle of a novel atomic scale ion conductor integrated circuit provided by the present invention is as follows:

[0035] The migration barrier for ions on a monolayer of intrinsic boron nitride is approximately 0.7 electron volts, while in boron nitride with vacancy defects, the migration barrier is as high as 2 electron volts. This suggests that when defects are present on the boron nitride surface, ions will choose channels away from the defects to migrate. Based on this, femtosecond laser plasma lithography can utilize the accompanying nonlinear optical effect to artificially construct vacancy defects of different directions and sizes on the atomic layer thickness of boron nitride. In this way, the conduction direction of ions can be artificially controlled by introducing vacancies on the surface of materials such as boron nitride, and atomic-level artificial control of directional ion conduction can be achieved in materials such as atomic-scale boron nitride. In this way, new ion conductor integrated circuits with ion conductors as the core material can be prepared.

[0036] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0037] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention description and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. An ion conductor integrated circuit, characterized in that: An ion conductor integrated circuit comprises a substrate (1), an atomic scale ion conductor (2), a metal layer (3) and a passivation layer (4); The material of the atomic-scale ion conductor (2) is hexagonal boron nitride, the atomic-scale ion conductor (2) is arranged on the substrate (1), and a preset etching process is performed to etch the atomic-scale ion conductor (2) using femtosecond laser processing technology and nonlinear laser processing technology, so as to construct an atomic-scale ion transmission channel by constructing vacancy defects of different directions and sizes; a metal layer (3) is placed on the atomic-scale ion conductor (2), and the metal layer (3) includes a power amplifier; the passivation layer (4) is arranged directly above the substrate (1), the atomic-scale ion conductor (2) and the metal layer (3), so as to package the ion conductor integrated circuit.

2. The ion conductor integrated circuit according to claim 1, wherein: The material of the substrate is silicon or silicon dioxide.

3. A method for preparing an ion conductor integrated circuit according to any one of claims 1 to 2, characterized in that: The following steps are involved: S1, using a compound containing boron and nitrogen as a precursor, performing chemical vapor deposition on a substrate (1), obtaining the hexagonal boron nitride single crystal after deposition, and obtaining an atomic scale ion conductor (2); and obtaining a first form ion conductor integrated circuit; S2. Based on the first form ion conductor integrated circuit, the atomic scale ion conductor (2) is etched using femtosecond laser processing technology and nonlinear laser processing technology to construct an atomic scale ion transmission channel; thereby obtaining a second form ion conductor integrated circuit; S3, placing a metal layer (3) on the atomic-scale ion conductor (2) and encapsulating the ion conductor integrated circuit through a passivation layer (4); The atomic-scale ion conductor integrated circuit is obtained.

Images