Semiconductor light emitting element and method of manufacturing the same

Abstract

The application provides a semiconductor light emitting element and a preparation method thereof, wherein the semiconductor light emitting element comprises, from bottom to top, a substrate, an n-type semiconductor layer, a quantum well layer, a first p-type semiconductor layer, a first unintentionally doped semiconductor layer, a second unintentionally doped semiconductor layer and a second p-type semiconductor layer, wherein the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer and the concentration ratio of Mg to H in the second p-type semiconductor layer are first decreased and then increased. The application can improve the light emitting efficiency and photoelectric conversion efficiency of the semiconductor light emitting element by setting the concentration ratio of Mg to H in the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer to be first decreased and then increased.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a semiconductor light emitting element and a preparation method thereof. BACKGROUND

[0002] The semiconductor light emitting element has the advantages of wide adjustable wavelength range, high light emitting efficiency, energy saving and environmental protection, long service life, small size and strong designability, and has gradually replaced incandescent lamps and fluorescent lamps to become a light source for ordinary home lighting, and is widely used in new scenes, such as Mini-LED, indoor high-resolution display screen, outdoor display screen, mobile phone backlight, television backlight, notebook computer backlight, household lamp, street lamp, car lamp and flashlight.

[0003] However, the traditional nitride semiconductor light emitting element is generally grown on a sapphire substrate by heteroepitaxy. The lattice mismatch and thermal mismatch between sapphire and nitride semiconductor are large, thereby generating a high defect density and polarization effect, and further generating non-radiative recombination and spatial separation of electron wave functions, reducing the light emitting efficiency of the semiconductor light emitting element. In addition, the hole ionization efficiency of the traditional nitride semiconductor element is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than 1-2 orders of magnitude lower than the electron concentration. Excessive electrons cannot participate in radiative recombination and overflow from the quantum well layer to the p-type semiconductor layer, resulting in non-radiative recombination. At the same time, the low hole ionization efficiency results in a low hole concentration in the p-type semiconductor layer and difficulty in effectively injecting the quantum well layer, resulting in a low efficiency of hole injection into the quantum well layer. Therefore, the above reasons result in a large difference between the electron concentration and the hole concentration of the quantum well layer, a low probability of electron and hole wave function overlap, a low electron and hole recombination efficiency, and further a low light emitting efficiency of the quantum well layer. SUMMARY

[0004] The present application aims to provide a semiconductor light emitting element and a preparation method thereof to solve the problem of low light emitting efficiency of the semiconductor light emitting element.

[0005] In order to achieve the above-mentioned and other related purposes, the present application provides a semiconductor light emitting element,

[0006] from bottom to top, sequentially comprising: a substrate, an n-type semiconductor layer, a quantum well layer, a first p-type semiconductor layer, a first unintentionally doped semiconductor layer, a second unintentionally doped semiconductor layer and a second p-type semiconductor layer, the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer and the concentration ratio of Mg to H in the second p-type semiconductor layer are first reduced and then increased.

[0007] Optionally, in the semiconductor light emitting element, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer is ≤ the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer ≤ the concentration ratio of Mg to H in the second p-type semiconductor layer ≤ the concentration ratio of Mg to H in the first p-type semiconductor layer.

[0008] Optionally, in the semiconductor light emitting element, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer is b, and 0≤b≤1.

[0009] Optionally, in the semiconductor light emitting element, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer is c, and 0≤c≤1.

[0010] Optionally, in the semiconductor light emitting element, the concentration ratio of Mg to H in the first p-type semiconductor layer is a, and 1≤a≤50.

[0011] Optionally, in the semiconductor light emitting element, the concentration ratio of Mg to H in the second p-type semiconductor layer is d, and 1≤d≤50.

[0012] Optionally, in the semiconductor light emitting element, the Mg concentration in the first p-type semiconductor layer, the Mg concentration in the first unintentionally doped semiconductor layer, the Mg concentration in the second unintentionally doped semiconductor layer, and the Mg concentration in the second p-type semiconductor layer first decrease and then increase.

[0013] Optionally, in the semiconductor light emitting element, the Mg concentration in the second unintentionally doped semiconductor layer ≤ the Mg concentration in the first unintentionally doped semiconductor layer ≤ the Mg concentration in the first p-type semiconductor layer ≤ the Mg concentration in the second p-type semiconductor layer.

[0014] Optionally, in the semiconductor light emitting element, the Al concentration in the first p-type semiconductor layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer, and the Al concentration in the second p-type semiconductor layer first decrease and then increase and then decrease and finally increase.

[0015] Optionally, in the semiconductor light emitting element, the Al concentration in the second unintentionally doped semiconductor layer ≤ the Al concentration in the second p-type semiconductor layer ≤ the Al concentration in the first p-type semiconductor layer ≤ the Al concentration in the first unintentionally doped semiconductor layer.

[0016] Optionally, in the semiconductor light emitting element, the thickness of the first p-type semiconductor layer is h1, and 20nm≤h1≤50nm.

[0017] Optionally, in the semiconductor light emitting element, the second p-type semiconductor layer has a thickness h2, and 10 nm≤h2≤50 nm.

[0018] Optionally, in the semiconductor light emitting element, the first unintentionally doped semiconductor layer has a thickness h3, and 20 nm≤h3≤80 nm.

[0019] Optionally, in the semiconductor light emitting element, the second unintentionally doped semiconductor layer has a thickness h4, and 5 nm≤h4≤50 nm.

[0020] Optionally, in the semiconductor light emitting element, the n-type semiconductor layer, the quantum well layer, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer are made of at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN.

[0021] To achieve the above object and other related objects, the present application further provides a method for manufacturing a semiconductor light emitting element, comprising the following steps:

[0022] providing a substrate;

[0023] forming an n-type semiconductor layer and a quantum well layer on the substrate in sequence;

[0024] forming a first p-type semiconductor layer, a first unintentionally doped semiconductor layer, a second unintentionally doped semiconductor layer, and a second p-type semiconductor layer on the quantum well layer in sequence, wherein the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer, and the concentration ratio of Mg to H in the second p-type semiconductor layer are first decreased and then increased.

[0025] Optionally, in the method for manufacturing a semiconductor light emitting element, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer≤the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer≤the concentration ratio of Mg to H in the second p-type semiconductor layer≤the concentration ratio of Mg to H in the first p-type semiconductor layer.

[0026] Optionally, in the method for manufacturing a semiconductor light emitting element, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer is b, and 0≤b≤1.

[0027] Optionally, in the method for manufacturing a semiconductor light emitting element, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer is c, and 0≤c≤1.

[0028] Optionally, in the method of producing a semiconductor light emitting element, the concentration ratio of Mg to H in the first p-type semiconductor layer is a, and 1 ≤ a ≤ 50.

[0029] Optionally, in the method of producing a semiconductor light emitting element, the concentration ratio of Mg to H in the second p-type semiconductor layer is d, and 1 ≤ d ≤ 50.

[0030] Optionally, in the method of producing a semiconductor light emitting element, the Mg concentration in the first p-type semiconductor layer, the Mg concentration in the first unintentionally doped semiconductor layer, the Mg concentration in the second unintentionally doped semiconductor layer, and the Mg concentration in the second p-type semiconductor layer first decrease and then increase.

[0031] Optionally, in the method of producing a semiconductor light emitting element, the Mg concentration in the second unintentionally doped semiconductor layer ≤ the Mg concentration in the first unintentionally doped semiconductor layer ≤ the Mg concentration in the first p-type semiconductor layer ≤ the Mg concentration in the second p-type semiconductor layer.

[0032] Optionally, in the method of producing a semiconductor light emitting element, the Al concentration in the first p-type semiconductor layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer, and the Al concentration in the second p-type semiconductor layer first decrease, then increase, then decrease, and finally increase.

[0033] Optionally, in the method of producing a semiconductor light emitting element, the Al concentration in the second unintentionally doped semiconductor layer ≤ the Al concentration in the second p-type semiconductor layer ≤ the Al concentration in the first p-type semiconductor layer ≤ the Al concentration in the first unintentionally doped semiconductor layer.

[0034] Optionally, in the method of producing a semiconductor light emitting element, the thickness of the first p-type semiconductor layer is h1, and 20 nm ≤ h1 ≤ 50 nm.

[0035] Optionally, in the method of producing a semiconductor light emitting element, the thickness of the second p-type semiconductor layer is h2, and 10 nm ≤ h2 ≤ 50 nm.

[0036] Optionally, in the method of producing a semiconductor light emitting element, the thickness of the first unintentionally doped semiconductor layer is h3, and 20 nm ≤ h3 ≤ 80 nm.

[0037] Optionally, in the method of producing a semiconductor light emitting element, the thickness of the second unintentionally doped semiconductor layer is h4, and 5 nm ≤ h4 ≤ 50 nm.

[0038] Optionally, in the preparation method of the semiconductor light-emitting element, the materials of the n-type semiconductor layer, the quantum well layer, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer are at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN.

[0039] Optionally, in the preparation method of the semiconductor light-emitting element, the growth conditions of the first unintentionally doped semiconductor layer include that the pressure ranges from 100 Torr to 200 Torr, the temperature ranges from 900 DEG C to 1000 DEG C, and N2 is introduced.

[0040] Optionally, in the preparation method of the semiconductor light-emitting element, the growth conditions of the second unintentionally doped semiconductor layer include that the pressure ranges from 200 Torr to 600 Torr, the temperature ranges from 900 DEG C to 1000 DEG C, and a mixed gas of N2 and H2 is introduced.

[0041] Compared with the prior art, the technical scheme of the present application has the following beneficial effects:

[0042] In the semiconductor light-emitting element provided by the present application, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer are arranged, and the concentration ratio of Mg to H of the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer is first reduced and then increased to form a U-shaped concentration ratio gradient of Mg to H, which forces the holes to migrate horizontally through the structure layer of unintentional doping, improves the hole horizontal expansion capability and hole injection efficiency, and thus improves the light-emitting efficiency and photoelectric conversion efficiency; the p-type semiconductor layer (i.e., the first p-type semiconductor layer and the second p-type semiconductor layer) with doping can improve the closing capability of V-type defects, and thus improves the ESD capability.

[0043] By comprehensively adjusting the concentration ratio of Mg to H, the Al concentration, and the thickness of the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer, the present application forms a U-shaped concentration ratio gradient of Mg to H and a W-shaped Al concentration gradient, which can improve the hole injection efficiency, the hole horizontal expansion capability, the closing capability of V-type defects, and the ESD capability, and finally realizes that the peak WPE (photoelectric conversion efficiency) of the semiconductor light-emitting element is greater than 70%, and the -8KV HBM human mode ESD pass rate is greater than 90%. BRIEF DESCRIPTION OF DRAWINGS

[0044] Fig. 1 is a structural schematic diagram of a semiconductor light-emitting element according to an embodiment of the present application;

[0045] Fig. 2 A secondary ion mass spectrum of a semiconductor light emitting element according to an embodiment of the present application;

[0046] Fig. 3 A flow chart of a method of manufacturing a semiconductor light emitting element according to an embodiment of the present application;

[0047] Figs. 1-3 In the drawings,

[0048] 11 - substrate, 12 - n-type semiconductor layer, 13 - quantum well layer, 14 - first p-type semiconductor layer, 15 - first unintentionally doped semiconductor layer, 16 - second unintentionally doped semiconductor layer, 17 - second p-type semiconductor layer. DETAILED DESCRIPTION

[0049] The semiconductor light emitting element and the method of manufacturing the same according to the present application will be described in further detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present application will be more clearly understood from the following description. It should be noted that the drawings are very simplified and all use non-precise proportions, and are only used to facilitate and clarify the purpose of assisting the description of the embodiments of the present application.

[0050] Referring to Fig. 1 The present application provides a semiconductor light emitting element, which comprises, from bottom to top, a substrate 11, an n-type semiconductor layer 12, a quantum well layer 13, a first p-type semiconductor layer 14, a first unintentionally doped semiconductor layer 15, a second unintentionally doped semiconductor layer 16, and a second p-type semiconductor layer 17.

[0051] In the embodiment, Mg is doped in the first p-type semiconductor layer 14 and the second p-type semiconductor layer 17, while Mg is not doped in the first unintentionally doped semiconductor layer 15 and the second unintentionally doped semiconductor layer 16, and the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer, and the concentration ratio of Mg to H in the second p-type semiconductor layer first decreases and then increases. Further, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer 16 is ≤ the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15 ≤ the concentration ratio of Mg to H in the second p-type semiconductor layer 17 ≤ the concentration ratio of Mg to H in the first p-type semiconductor layer 14. Still further, preferably, the concentration ratio of Mg to H in the first p-type semiconductor layer 14, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer 16, and the concentration ratio of Mg to H in the second p-type semiconductor layer 17 form a U-shaped Mg to H concentration ratio gradient, i.e. the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer 16 ≤ the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15 < the concentration ratio of Mg to H in the second p-type semiconductor layer 17 ≤ the concentration ratio of Mg to H in the first p-type semiconductor layer 14. The embodiment can improve the hole injection efficiency, the hole lateral expansion capability, the V-type defect blocking capability, and the ESD capability, and further improve the light emitting efficiency and the photoelectric conversion efficiency of the semiconductor light emitting element by inserting the first unintentionally doped semiconductor layer 15 and the second unintentionally doped semiconductor layer 16 between the first p-type semiconductor layer 14 and the second p-type semiconductor layer 17, and forming a U-shaped Mg to H concentration ratio gradient.

[0052] Further, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15 is b, and preferably 0≤b≤1. The concentration ratio of Mg to H in the second unintentionally doped semiconductor layer 16 is c, and preferably 0≤c≤1. The concentration ratio of Mg to H in the first p-type semiconductor layer 14 is a, and preferably 1≤a≤50. The concentration ratio of Mg to H in the second p-type semiconductor layer 17 is d, and preferably 1≤d≤50.

[0053] In the embodiment, the Mg concentration in the first p-type semiconductor layer, the Mg concentration in the first unintentionally doped semiconductor layer, the Mg concentration in the second unintentionally doped semiconductor layer, and the Mg concentration in the second p-type semiconductor layer are first decreased and then increased. Further, the Mg concentration in the second unintentionally doped semiconductor layer 16 is ≤ the Mg concentration in the first unintentionally doped semiconductor layer 15 ≤ the Mg concentration in the first p-type semiconductor layer 14 ≤ the Mg concentration in the second p-type semiconductor layer 17. Still further, preferably, the Mg concentration in the first p-type semiconductor layer 14, the Mg concentration in the first unintentionally doped semiconductor layer 15, the Mg concentration in the second unintentionally doped semiconductor layer 16, and the Mg concentration in the second p-type semiconductor layer 17 form a U-shaped Mg concentration gradient, i.e., the Mg concentration in the second unintentionally doped semiconductor layer 16 < the Mg concentration in the first unintentionally doped semiconductor layer 15 ≤ the Mg concentration in the first p-type semiconductor layer 14 < the Mg concentration in the second p-type semiconductor layer 17.

[0054] In the embodiment, the first p-type semiconductor layer 14 can include two structure layers, i.e., a first structure layer and a second structure layer, wherein the first structure layer is close to the quantum well layer 13, the second structure layer is close to the first unintentionally doped semiconductor layer 15, and the Mg concentration and the concentration ratio of Mg to H in the first structure layer and the second structure layer are preferably the same, while the Al concentration in the first structure layer and the second structure layer can be the same or different. Preferably, the Al concentration in the first structure layer ≥ the Al concentration in the second structure layer. In the embodiment, the Al concentration in the first p-type semiconductor layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer, and the Al concentration in the second p-type semiconductor layer are first decreased and then increased. Further, the Al concentration in the second unintentionally doped semiconductor layer 16 ≤ the Al concentration in the second p-type semiconductor layer 17 ≤ the Al concentration in the first p-type semiconductor layer 14 ≤ the Al concentration in the first unintentionally doped semiconductor layer 15. Specifically, the Al concentration in the second unintentionally doped semiconductor layer 16 ≤ the Al concentration in the second p-type semiconductor layer 17 ≤ the Al concentration in the second structure layer ≤ the Al concentration in the first structure layer ≤ the Al concentration in the first unintentionally doped semiconductor layer 15. Still further, preferably, the Al concentration in the first structure layer, the Al concentration in the second structure layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer, and the Al concentration in the second p-type semiconductor layer form a W-shaped Al concentration gradient, which can improve the hole injection efficiency and the hole lateral expansion capability.

[0055] The application can improve the hole injection efficiency, the hole lateral expansion ability, the V-type defect blocking ability and the ESD ability by adjusting the Mg and H concentration ratio, the Al concentration and the thickness of the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer, forming the U-shaped Mg and H concentration ratio gradient and the W-shaped Al concentration gradient, and finally realizing the peak WPE of the semiconductor light emitting element greater than 70% and the -8KV HBM human mode ESD passing rate greater than 90%.

[0056] Referring to Fig. 2 The measurement method of the element composition in each structure layer of the semiconductor light emitting element includes the SIMS (secondary ion mass spectrometry) analysis technology. For example, the Mg, H and Al concentrations in each structure layer of the second unintentionally doped semiconductor layer 16, the first unintentionally doped semiconductor layer 15, the first p-type semiconductor layer 14 and the second p-type semiconductor layer 17 can be measured by SIMS (secondary ion mass spectrometry).

[0057] The concentration of each component in each structure layer in the embodiment can be the average concentration of each component in each structure layer, or the peak concentration of each component in each structure layer. For example, the concentration of Mg in the first p-type semiconductor layer can be the average concentration of Mg in the first p-type semiconductor layer, or the peak concentration of Mg in the first p-type semiconductor layer.

[0058] Referring to Fig. 3 The preparation method of the semiconductor light emitting element includes the following steps:

[0059] Step S1: providing a substrate 11;

[0060] Step S2: sequentially forming an n-type semiconductor layer 12 and a quantum well layer 13 on the substrate 11;

[0061] Step S3: sequentially forming a first p-type semiconductor layer 14, a first unintentionally doped semiconductor layer 15, a second unintentionally doped semiconductor layer 16 and a second p-type semiconductor layer 17 on the quantum well layer 13, the Mg and H concentration ratio in the first p-type semiconductor layer, the Mg and H concentration ratio in the first unintentionally doped semiconductor layer, the Mg and H concentration ratio in the second unintentionally doped semiconductor layer and the Mg and H concentration ratio in the second p-type semiconductor layer first decrease and then increase.

[0062] The step S1 is executed to provide a substrate 11. As the substrate 11, a substrate capable of transmitting light emitted from the quantum well layer 15 and emitting the light from the substrate side is preferably used, and a sapphire substrate or a single-crystal AlN substrate, or the like can be used. In addition, as the substrate 11, an AlN template substrate in which an undoped AlN structure layer is epitaxially grown on the surface of a sapphire substrate can also be used. In order to improve light extraction efficiency, the light emission side of the substrate 11 or the opposite side thereof, or the surface of the AlN structure layer of the AlN template substrate can be in a concave-convex shape. In order to reduce dislocations of the AlN structure layer, a high-temperature (for example, 1500°C or higher) annealing process can also be performed.

[0063] A buffer layer can be provided between the substrate 11 and the n-type semiconductor layer 12 to alleviate lattice mismatch between the substrate 11 and the n-type semiconductor layer 12. The material of the buffer layer is preferably AlN, but is not limited thereto.

[0064] The step S2 is executed to form the n-type semiconductor layer 12 and the quantum well layer 13 on the substrate 11.

[0065] The n-type semiconductor layer 12 is formed on the substrate 11, and the n-type semiconductor layer 12 can be provided on the substrate 11 via the buffer layer as necessary, or can be directly provided on the substrate 11. The n-type semiconductor layer 12 can employ a conventional n-type layer, and the material thereof can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, but is not limited thereto.

[0066] For example, the n-type semiconductor layer 12 can be composed of n-AlGaN. The n-type semiconductor layer 12 functions as an n-type layer by being doped with an n-type dopant, and the n-type dopant is preferably Si, but is not limited thereto. In addition, the n-type semiconductor layer 12 can employ a superlattice structure in addition to a single-layer structure or a structure composed of multiple layers.

[0067] The quantum well layer 13 is formed on the n-type semiconductor layer 12 after the step of forming the n-type semiconductor layer 12 on the substrate 11. The material of the quantum well layer 13 can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, but is not limited thereto.

[0068] The quantum well layer 13 is preferably composed of a multiple quantum well (MQW) structure formed of a well layer and a barrier layer. Note that in the case of a multiple quantum well structure, the layer that emits light is the well layer. The quantum well layer 13 is a conventional structure, and thus a detailed description thereof will not be given here.

[0069] After the step of forming the quantum well layer 13 on the n-type semiconductor layer 12, a first p-type semiconductor layer 14 is formed on the quantum well layer 13. The material of the first p-type semiconductor layer 14 can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN, but is not limited thereto. Further, the material of the first p-type semiconductor layer 14 is preferably at least one of AlGaN, AlInGaN, AlN and AlInN. For example, the material of the first p-type semiconductor layer 14 is AlGaN. In addition, as the p-type dopant doped into the first p-type semiconductor layer 14, Mg is preferred.

[0070] The concentration ratio of Mg to H in the first p-type semiconductor layer 14 is a, and preferably 1≤a≤50. The concentration ratio of Mg to H in the first p-type semiconductor layer 14 in this range can improve the doping concentration of Mg, improve the hole concentration and hole injection efficiency, and reduce the voltage resistance.

[0071] The thickness of the first p-type semiconductor layer 14 is h1, and preferably 20nm≤h1≤50nm. The thickness of the first p-type semiconductor layer 14 in this range can make the crystal quality high, the total amount of holes large, and the hole injection into the quantum well layer also large, which can improve the photoelectric conversion efficiency (WPE) and light-emitting efficiency of the semiconductor light-emitting element. However, if the thickness of the first p-type semiconductor layer 14 is too thick (for example, 80nm), light absorption and crystal quality degradation can occur, affecting the WPE and ESD; and if the thickness of the first p-type semiconductor layer 14 is too thin (for example, 5nm), the total amount of holes can be insufficient, which can result in insufficient hole injection, affecting the WPE.

[0072] In the present embodiment, the first p-type semiconductor layer 14 can include two layers of structure layers, i.e., a first structure layer and a second structure layer. The materials of the first structure layer and the second structure layer can be the same or different. The Mg concentration and the concentration ratio of Mg to H in the first structure layer and the second structure layer are preferably the same, and the Al concentration in the first structure layer and the second structure layer can be the same or different. Preferably, the Al concentration in the first structure layer is ≥ the Al concentration in the second structure layer.

[0073] In the present embodiment, the data of each component in the first p-type semiconductor layer 14 can be obtained by SIMS testing. For example, the concentrations of Mg, H and Al in the first p-type semiconductor layer 14 are obtained by SIMS testing. The Mg in the first p-type semiconductor layer 14 is mainly derived from the Mg source introduced into the structure layer, the Al is mainly derived from the Al source introduced into the structure layer, and the H is mainly derived from the NH3 and H2 introduced into the structure layer.

[0074] After the step of forming the first p-type semiconductor layer 14 on the quantum well layer 13, a first unintentionally doped semiconductor layer 15 is formed on the first p-type semiconductor layer 14. The material of the first unintentionally doped semiconductor layer 15 can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN, but is not limited thereto. Further, the material of the first unintentionally doped semiconductor layer 15 is preferably at least one of AlGaN, AlInGaN, AlN and AlInN. For example, the material of the first unintentionally doped semiconductor layer 15 is AlGaN. In addition, the first unintentionally doped semiconductor layer 15 is not doped with Mg, i.e. no Mg source is introduced during the formation of the first unintentionally doped semiconductor layer 15.

[0075] In the present embodiment, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer is preferably less than the concentration ratio of Mg to H in the second p-type semiconductor layer 17. Further, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15 is b, and 0≤b≤1 is preferred. The concentration ratio of Mg to H in the first unintentionally doped semiconductor layer 15 in this range can have a higher hole lateral expansion capability.

[0076] In the present embodiment, the Mg concentration in the first unintentionally doped semiconductor layer 15 is preferably less than the Mg concentration in the first p-type semiconductor layer 14. Further, the Al concentration in the first unintentionally doped semiconductor layer 15 is preferably greater than the Al concentration in the first p-type semiconductor layer 14, and in particular, the Al concentration in the first unintentionally doped semiconductor layer 15 is greater than the Al concentration in the first structure layer.

[0077] The thickness of the first unintentionally doped semiconductor layer 15 is c, and 20nm≤c≤80nm is preferred. In this thickness range, the hole can easily diffuse, migrate and transition, and the hole lateral expansion is promoted, so that the resistance value is reduced, which is beneficial to improve the light emitting efficiency and WPE. If the thickness of the first unintentionally doped semiconductor layer 15 is too thick (e.g. 120nm), the distance between the first p-type semiconductor layer and the second p-type semiconductor layer is too large, the hole cannot diffuse, migrate and transition, the resistance value is too large, the voltage is high, and the WPE is affected. If the thickness of the first unintentionally doped semiconductor layer 15 is too thin (e.g. 5nm), the effect of promoting the hole lateral expansion can not be achieved.

[0078] The growth conditions of the first unintentionally doped semiconductor layer 15 include: the pressure range is preferably 100 Torr to 200 Torr, the temperature range is preferably 900°C to 1000°C, and N2 is introduced. No Mg source is introduced during the growth of the first unintentionally doped semiconductor layer 15, and no H2 is introduced, so that the Mg to H concentration ratio of the layer decreases from a (1≤a≤50) of the first p-type semiconductor layer 14 to the lowest point b (0≤b≤1) of the layer.

[0079] The data of each component in the first unintentionally doped semiconductor layer 15 can be obtained by SIMS test in this embodiment. For example, the concentrations of Mg, H and Al in the first unintentionally doped semiconductor layer 15 are obtained by SIMS test. The Mg in the first unintentionally doped semiconductor layer 15 mainly comes from the Mg diffusion of the first p-type semiconductor layer 14, the H mainly comes from NH3, and the Al mainly comes from the Al source introduced in the structure layer.

[0080] After the step of forming the first unintentionally doped semiconductor layer 15 on the first p-type semiconductor layer 14, a second unintentionally doped semiconductor layer 16 is formed on the first unintentionally doped semiconductor layer 15. The material of the second unintentionally doped semiconductor layer 16 can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN, but is not limited thereto. Further, the material of the second unintentionally doped semiconductor layer 16 is preferably at least one of AlGaN, AlInGaN, AlN and AlInN. For example, the material of the second unintentionally doped semiconductor layer 16 is AlGaN. In addition, the second unintentionally doped semiconductor layer 16 is not doped with Mg, i.e. no Mg source is introduced during the growth of the second unintentionally doped semiconductor layer 16.

[0081] Since the Mg to H concentration ratio in the second unintentionally doped semiconductor layer 16 > the Mg to H concentration ratio in the first unintentionally doped semiconductor layer 15, the hole lateral expansion efficiency and the vertical migration and injection of holes will be reduced, therefore, in this embodiment, the Mg to H concentration ratio in the second unintentionally doped semiconductor layer 16 is preferably ≤ the Mg to H concentration ratio in the first unintentionally doped semiconductor layer 15. Further, the Mg to H concentration ratio of the second unintentionally doped semiconductor layer 16 is c, and preferably 0≤c≤1. The Mg to H concentration ratio of the second unintentionally doped semiconductor layer 16 in this range can have higher hole lateral expansion capability.

[0082] Preferably, the concentration of Mg in the second unintentionally doped semiconductor layer 16 is less than the concentration of Mg in the first unintentionally doped semiconductor layer 15. Further preferably, the concentration of Al in the second unintentionally doped semiconductor layer 16 is less than the concentration of Al in the first p-type semiconductor layer 14, and in particular, the concentration of Al in the second unintentionally doped semiconductor layer 16 is less than the concentration of Al in the second structure layer.

[0083] The second unintentionally doped semiconductor layer 16 has a thickness h3, and preferably 5nm≤h3≤50nm. In this thickness range, the hole can be easily diffused, migrated and transitioned, and the lateral expansion of the hole is promoted, so that the resistance value is reduced, and the light emitting efficiency and WPE are improved. If the thickness of the second unintentionally doped semiconductor layer 16 is too thick (for example, 80nm), the distance between the first p-type semiconductor layer and the second p-type semiconductor layer will be too large, the hole cannot be diffused, migrated and transitioned, the resistance value will be too large, the voltage will be high, and the WPE will be affected. If the thickness of the second unintentionally doped semiconductor layer 16 is too thin (for example, 1nm), the effect of promoting the lateral expansion of the hole can not be achieved.

[0084] The growth conditions of the second unintentionally doped semiconductor layer 16 include: the pressure range is preferably 200Torr-600Torr, the temperature range is preferably 900℃-1000℃, and N2 and H2 mixed gas is introduced. During the growth of the second unintentionally doped semiconductor layer 16, no Mg source is introduced, so that the concentration ratio c (0≤c≤1) of Mg and H in the layer gradually increases in the direction of the second p-type semiconductor layer 17.

[0085] The data of each component in the second unintentionally doped semiconductor layer 16 can be obtained by SIMS test. For example, the concentrations of Mg, H and Al in the second unintentionally doped semiconductor layer 16 are obtained by SIMS test. The Mg in the second unintentionally doped semiconductor layer 16 mainly comes from the diffusion of Mg in the second p-type semiconductor layer 17, the H mainly comes from NH3 and H2, and the Al mainly comes from the Al source introduced in the structure layer.

[0086] After the step of forming the second unintentionally doped semiconductor layer 16 on the first unintentionally doped semiconductor layer 15, a second p-type semiconductor layer 17 is formed on the second unintentionally doped semiconductor layer 16. The material of the second p-type semiconductor layer 17 can be at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN, but is not limited thereto. Further, the material of the second unintentionally doped semiconductor layer 16 is preferably at least one of AlGaN, AlInGaN, AlN and AlInN. For example, the material of the second p-type semiconductor layer 17 is AlGaN. In addition, the second p-type semiconductor layer 17 is heavily doped with a p-type dopant, which is preferably Mg.

[0087] When the concentration ratio of Mg to H in the second p-type semiconductor layer 17 is greater than the concentration ratio of Mg to H in the first p-type semiconductor layer 14, the hole concentration is relatively low, and the hole injection efficiency of the quantum well layer is also relatively low, which affects the light emission efficiency and WPE. Therefore, in the present embodiment, the concentration ratio of Mg to H in the second p-type semiconductor layer 17 is preferably less than or equal to the concentration ratio of Mg to H in the first p-type semiconductor layer 14. Further, the concentration ratio of Mg to H in the second p-type semiconductor layer 17 is d, and 1≤d≤50 is preferred. When the concentration ratio of Mg to H in the second p-type semiconductor layer 17 is less than 1, the hole concentration can be insufficient and the hole injection efficiency can be low, resulting in low quantum radiation recombination efficiency.

[0088] The present embodiment preferably has a Mg concentration in the second p-type semiconductor layer 17 that is greater than the Mg concentration in the first p-type semiconductor layer 14. In the present embodiment, the Mg concentration in the second unintentionally doped semiconductor layer 16 is preferably less than or equal to the Mg concentration in the first unintentionally doped semiconductor layer 15, which is less than or equal to the Mg concentration in the first p-type semiconductor layer 14, which is less than or equal to the Mg concentration in the second p-type semiconductor layer 17. Further, the first p-type semiconductor layer 14, the first unintentionally doped semiconductor layer 15, the second unintentionally doped semiconductor layer 16 and the second p-type semiconductor layer 17 can form a U-shaped Mg concentration gradient, which can further improve the hole lateral expansion capability and the hole injection efficiency.

[0089] Further, preferably, the Al concentration in the second unintentionally doped semiconductor layer 16 is ≤ the Al concentration in the second p-type semiconductor layer 17 ≤ the Al concentration in the first p-type semiconductor layer 14, in particular, the Al concentration in the second unintentionally doped semiconductor layer 16 is ≤ the Al concentration in the second p-type semiconductor layer 17 ≤ the Al concentration in the second structure layer. The Al concentration in the first p-type semiconductor layer 14 is high, which can block electron overflow of the quantum well and enhance the function of hole injection. In the embodiment, the Al concentration in the second unintentionally doped semiconductor layer is ≤ the Al concentration in the second p-type semiconductor layer ≤ the Al concentration in the second structure layer ≤ the Al concentration in the first structure layer ≤ the Al concentration in the first unintentionally doped semiconductor layer, and preferably, the first structure layer, the second structure layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer can form a W-shaped Al concentration gradient, which can further improve the hole lateral expansion capability.

[0090] The thickness of the second p-type semiconductor layer 17 is h4. In the embodiment, in order to reduce light absorption and fill in V-type defects, thereby reducing surface defects, improving ESD capability and light emitting efficiency, preferably, 10 nm ≤ h4 ≤ 50 nm. If the thickness of the second p-type semiconductor layer 17 is too thick (for example, 80 nm), it will have a negative effect on light absorption, resulting in a decrease in brightness and WPE, and if the thickness of the second p-type semiconductor layer 17 is too thin (for example, 2 nm), it can cause the V-type defects to be unable to be closed, resulting in surface unevenness problems, ESD performance degradation, and at the same time, the layer is too thin, the contact resistance with the electrode or ITO and the like will increase, resulting in problems such as voltage rise.

[0091] In the embodiment, the data of each component in the second p-type semiconductor layer 17 can be obtained by SIMS test. For example, the concentrations of Mg, H and Al in the second p-type semiconductor layer 17 are obtained by SIMS test. The Mg in the second p-type semiconductor layer 17 mainly comes from the Mg source introduced by the structure layer, the Al mainly comes from the diffusion of Al in the second unintentionally doped semiconductor layer 16, and the H mainly comes from the NH3 and H2 introduced by the structure layer.

[0092] In the semiconductor light emitting element of the present application, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer are arranged on the quantum well layer, i.e. the non-doped structure layer is introduced between the doped p-type semiconductor layers, which can improve the hole injection efficiency, and improve the light emitting efficiency and photoelectric conversion efficiency of the semiconductor light emitting element. Moreover, the Mg and H concentration ratio of the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer can be first reduced and then increased to form a U-shaped Mg and H concentration ratio gradient, and the U-shaped Mg and H concentration ratio gradient forces the holes to perform lateral migration through the unintentionally doped structure layer, which improves the hole lateral expansion capability and hole injection efficiency, thereby improving the light emitting efficiency and photoelectric conversion efficiency; the doped p-type semiconductor layers (i.e. the first p-type semiconductor layer and the second p-type semiconductor layer) can improve the sealing capability of the V-shaped defects, thereby improving the ESD capability.

[0093] The present application can improve the hole injection efficiency, hole lateral expansion capability, sealing capability of the V-shaped defects and ESD capability by comprehensively adjusting the Mg and H concentration ratio, Al concentration and thickness of the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer, and forming a U-shaped Mg and H concentration ratio gradient and a W-shaped Al concentration gradient, so as to finally realize that the peak WPE (photoelectric conversion efficiency) of the semiconductor light emitting element is greater than 70%, and the -8KV HBM human mode ESD pass rate is greater than 90%.

[0094] It should be noted that the above semiconductor layers can be formed by a known thin film forming method such as metal organic chemical vapor deposition (MOCVD) method, molecular beam epitaxy (MBE) method, HVPE (Hydride Vapor Phase Epitaxy) method, plasma assisted chemical vapor deposition (Plasma Chemical Vapor Deposition, PECVD) method, sputtering method, etc., for example, the n-type semiconductor layer 12, the quantum well layer 13, the first p-type semiconductor layer 14, the first unintentionally doped semiconductor layer 15, the second unintentionally doped semiconductor layer 16 and the second p-type semiconductor layer 17 can be formed by the MOCVD method.

[0095] Furthermore, it is to be understood that, even though numerous characteristics and advantages of various embodiments of the present application have been set forth in the foregoing description, the application is not to be limited to the embodiments disclosed, but rather, can be practiced with the scope and range of equivalents of the embodiments described. It should also be understood that the application is capable of out of the ordinary uses or modifications without departing from the scope and application of the application as set forth in the claims.

[0096] It should also be understood that the application is not limited to the particular methodology, compounds, materials, manufacturing techniques, uses and applications described herein, which can vary. It should be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. It must be noted that, as used in the specification and the appended claims, the singular forms "a," "an" and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a step" is a reference to one or more steps and can include sub-steps. All conjunctive language is to be understood in the most inclusive sense possible. Thus, the use of the conjunctive terms e.g., "and", unless otherwise indicated, should be understood to encompass both conjunctive and disjunctive meanings of the term. For example, the phrase "and / or" should be understood to encompass both conjunctive and disjunctive meanings of the term. Structures described herein are to be understood as referring to functional equivalents as well. Language of equivalence is to be understood as encompassing both the explicit and implicit language.

Claims

1. A semiconductor light emitting element characterized by comprising: From bottom to top, sequentially comprising: a substrate, an n-type semiconductor layer, a quantum well layer, a first p-type semiconductor layer, a first unintentionally doped semiconductor layer, a second unintentionally doped semiconductor layer, and a second p-type semiconductor layer, the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer, and the concentration ratio of Mg to H in the second p-type semiconductor layer are first decreased and then increased; wherein the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer ≤ the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer ≤ the concentration ratio of Mg to H in the second p-type semiconductor layer ≤ the concentration ratio of Mg to H in the first p-type semiconductor layer; the Al concentration in the first p-type semiconductor layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer, and the Al concentration in the second p-type semiconductor layer are first decreased and then increased; and the second unintentionally doped semiconductor layer is formed on the first unintentionally doped semiconductor layer.

2. The semiconductor light emitting element according to claim 1, wherein The concentration ratio of Mg to H in the first unintentionally doped semiconductor layer is b, and 0 ≤ b ≤ 1.

3. The semiconductor light emitting element according to claim 1, wherein The concentration ratio of Mg to H in the second unintentionally doped semiconductor layer is c, and 0 ≤ c ≤ 1.

4. The semiconductor light emitting element according to claim 1, wherein The concentration ratio of Mg to H in the first p-type semiconductor layer is a, and 1 ≤ a ≤ 50.

5. The semiconductor light emitting element according to claim 1, wherein The concentration ratio of Mg to H in the second p-type semiconductor layer is d, and 1 ≤ d ≤ 50.

6. The semiconductor light emitting element according to claim 1, wherein The Mg concentration in the first p-type semiconductor layer, the Mg concentration in the first unintentionally doped semiconductor layer, the Mg concentration in the second unintentionally doped semiconductor layer, and the Mg concentration in the second p-type semiconductor layer are first decreased and then increased.

7. The semiconductor light emitting element according to claim 6, wherein The Mg concentration in the second unintentionally doped semiconductor layer ≤ the Mg concentration in the first unintentionally doped semiconductor layer ≤ the Mg concentration in the first p-type semiconductor layer ≤ the Mg concentration in the second p-type semiconductor layer.

8. The semiconductor light emitting element as claimed in claim 1, wherein The Al concentration in the second unintentionally doped semiconductor layer ≤ the Al concentration in the second p-type semiconductor layer ≤ the Al concentration in the first p-type semiconductor layer ≤ the Al concentration in the first unintentionally doped semiconductor layer.

9. The semiconductor light emitting element according to claim 1, wherein The thickness of the first p-type semiconductor layer is h1, and 20 nm ≤ h1 ≤ 50 nm.

10. The semiconductor light emitting element according to claim 1, wherein The thickness of the second p-type semiconductor layer is h2, and 10 nm ≤ h2 ≤ 50 nm.

11. The semiconductor light emitting element according to claim 1, wherein The thickness of the first unintentionally doped semiconductor layer is h3, and 20 nm ≤ h3 ≤ 80 nm.

12. The semiconductor light emitting element according to claim 1, wherein The thickness of the second unintentionally doped semiconductor layer is h4, and 5 nm ≤ h4 ≤ 50 nm.

13. The semiconductor light emitting element according to claim 1, wherein The material of the n-type semiconductor layer, the quantum well layer, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer, and the second p-type semiconductor layer is at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN.

14. A method for manufacturing a semiconductor light emitting element, characterized by, The method comprises the following steps: providing a substrate; forming an n-type semiconductor layer and a quantum well layer on the substrate in sequence; forming a first p-type semiconductor layer, a first unintentionally doped semiconductor layer, a second unintentionally doped semiconductor layer and a second p-type semiconductor layer on the quantum well layer in sequence, wherein the concentration ratio of Mg to H in the first p-type semiconductor layer, the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer, the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer and the concentration ratio of Mg to H in the second p-type semiconductor layer are first decreased and then increased; wherein the concentration ratio of Mg to H in the second unintentionally doped semiconductor layer ≤ the concentration ratio of Mg to H in the first unintentionally doped semiconductor layer ≤ the concentration ratio of Mg to H in the second p-type semiconductor layer ≤ the concentration ratio of Mg to H in the first p-type semiconductor layer; the Al concentration in the first p-type semiconductor layer, the Al concentration in the first unintentionally doped semiconductor layer, the Al concentration in the second unintentionally doped semiconductor layer and the Al concentration in the second p-type semiconductor layer are first decreased and then increased, then decreased and finally increased; and forming the second unintentionally doped semiconductor layer on the first unintentionally doped semiconductor layer.

15. The method for producing a semiconductor light emitting element according to claim 14, wherein The concentration ratio of Mg to H in the first unintentionally doped semiconductor layer is b, and 0≤b≤1.

16. The method for producing a semiconductor light emitting element according to claim 14, wherein The concentration ratio of Mg to H in the second unintentionally doped semiconductor layer is c, and 0≤c≤1.

17. The method for producing a semiconductor light emitting element according to claim 14, wherein The concentration ratio of Mg to H in the first p-type semiconductor layer is a, and 1≤a≤50.

18. The method for producing a semiconductor light emitting element according to claim 14, wherein The concentration ratio of Mg to H in the second p-type semiconductor layer is d, and 1≤d≤50.

19. The method for producing a semiconductor light emitting element according to claim 14, wherein The Mg concentration in the first p-type semiconductor layer, the Mg concentration in the first unintentionally doped semiconductor layer, the Mg concentration in the second unintentionally doped semiconductor layer and the Mg concentration in the second p-type semiconductor layer are first decreased and then increased.

20. The method for producing a semiconductor light emitting element according to claim 19, wherein The Mg concentration in the second unintentionally doped semiconductor layer ≤ the Mg concentration in the first unintentionally doped semiconductor layer ≤ the Mg concentration in the first p-type semiconductor layer ≤ the Mg concentration in the second p-type semiconductor layer.

21. The method for producing a semiconductor light emitting element according to Claim 14, wherein The Al concentration in the second unintentionally doped semiconductor layer ≤ the Al concentration in the second p-type semiconductor layer ≤ the Al concentration in the first p-type semiconductor layer ≤ the Al concentration in the first unintentionally doped semiconductor layer.

22. The method for producing a semiconductor light emitting element according to claim 14, wherein The thickness of the first p-type semiconductor layer is h1, and 20nm≤h1≤50nm.

23. The method for producing a semiconductor light emitting element according to claim 14, wherein The thickness of the second p-type semiconductor layer is h2, and 10nm≤h2≤50nm.

24. The method for producing a semiconductor light emitting element according to claim 14, wherein The thickness of the first unintentionally doped semiconductor layer is h3, and 20nm≤h3≤80nm.

25. The method for producing a semiconductor light emitting element according to claim 14, wherein The thickness of the second unintentionally doped semiconductor layer is h4, and 5nm≤h4≤50nm.

26. The method for producing a semiconductor light emitting element according to claim 14, wherein The material of the n-type semiconductor layer, the quantum well layer, the first p-type semiconductor layer, the first unintentionally doped semiconductor layer, the second unintentionally doped semiconductor layer and the second p-type semiconductor layer is at least one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN and AlInN.

27. The method for producing a semiconductor light emitting element according to claim 14, wherein The growth condition of the first non-intentionally doped semiconductor layer includes: pressure ranging from 100 Torr to 200 Torr, temperature ranging from 900 DEG C to 1000 DEG C, and N2 being introduced.

28. The method for producing a semiconductor light emitting element according to claim 14, wherein The growth condition of the second non-intentionally doped semiconductor layer includes: pressure ranging from 200 Torr to 600 Torr, temperature ranging from 900 DEG C to 1000 DEG C, and N2 and H2 mixed gas being introduced.

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