Magnetron plasma film forming device

Abstract

A magnetron sputtering film forming device (1) comprises a film forming roller (10) and a magnetron plasma unit (11). The magnetron plasma unit (11) comprises a rotating target (17) and a magnet unit (18). The magnet unit (18) comprises a first magnetic pole portion (21) and a second magnetic pole portion (22) adjacent to each other. The first magnetic pole portion comprises a first region (23), a second region (24), and a third region (25) in sequence. Each of these regions comprises at least one of a first component and a second component obtained as decomposed components of a magnetization direction. In the first region (23) and the third region (25), the first component is larger than the second component, and they are opposite. In the second region (24), the first component is smaller than the second component.

Description

Technical Field

[0001] The invention relates to a magnetron plasma film forming device. Background Art

[0002] Conventionally, as a magnetron plasma film forming apparatus, a magnetron sputtering film forming apparatus including a film forming roller and a magnetron plasma unit facing the film forming roller is known.

[0003] In this magnetron sputtering device, a magnetic field is generated by a magnetron plasma unit, whereby electrons released from a target are retained for a long period of time, thereby improving the efficiency of sputtering.

[0004] For example, a magnetron sputtering film forming apparatus has been proposed, which includes: a cylindrical target; and four magnets disposed inside the cylindrical target and adjacent to each other (for example, refer to Patent Document 1 listed below).

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2017-150082 Summary of the invention

[0008] Problem that the invention aims to solve

[0009] However, a high film forming speed is required for a magnetron plasma film forming apparatus.

[0010] However, the structure of Patent Document 1 described above has a limit in achieving a high film formation rate.

[0011] The present invention provides a magnetron plasma film forming device capable of high-speed film forming.

[0012] Solutions for solving problems

[0013] The present invention (1) includes a magnetron plasma film-forming device, which comprises: a film-forming roller; and a magnetron plasma unit, which is arranged relative to the film-forming roller, the magnetron plasma unit comprising: a rotating target, whose axis extends in the same direction as the axis of the film-forming roller; and a magnet unit, which is arranged radially inward of the rotating target, the magnet unit comprising: a first magnetic pole portion; and a second magnetic pole portion, which is adjacent to the first magnetic pole portion in a second direction orthogonal to the first direction, the first direction being along a line segment connecting the axis of the film-forming roller and the axis of the rotating target, The first magnetic pole portion and the second magnetic pole portion each have a first region, a second region, and a third region in sequence in the second direction, and the first region, the second region, and the third region each have at least one of a first component and a second component obtained by decomposing the magnetization direction into the first direction and the second direction, in the first region, the first component is larger than the second component, in the second region, the first component is smaller than the second component, and in the third region, the first component is larger than the second component and is opposite to the first component in the first region.

[0014] In each of the first and second magnetic poles of the magnetron plasma device, the magnetization direction forms a flow in the shape of a letter U as follows: in the first region, it is mainly along the first direction, then in the second region, it is mainly along the second direction and toward the third region, and in the third region, it is mainly along the first direction opposite to the first direction of the first region. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target of the first magnetic pole, and a tunnel-shaped magnetic field is formed on the surface of the rotating target of the second magnetic pole, and these tunnel-shaped magnetic fields can be made close. In other words, the sputtering angle can be narrowed (discussed later). As a result, high-speed film formation is possible.

[0015] The present invention (2) includes the magnetron plasma film forming apparatus described in (1), wherein the first region and the third region each mainly have the first component, and the second region mainly has the second component.

[0016] In this magnetron sputtering film forming apparatus, the first region and the third region each mainly have the first component, and the second region mainly has the second component. Therefore, although the first magnetic pole portion and the second magnetic pole portion each have a simple structure, high-speed film formation is possible.

[0017] The present invention (3) includes the magnetron plasma film forming device described in (1), wherein the first region is continuous with the second region, the second region is continuous with the third region, in the first region, the first component decreases as it moves toward the second region, and in the third region, the first component decreases as it moves toward the second region.

[0018] In the magnetron sputtering film forming device, in each of the first magnetic pole portion and the second magnetic pole portion, the first region, the second region and the third region are continuous, so that a tunnel-shaped magnetic field can be reliably formed on the surface of the rotating target of the first magnetic pole portion, and a tunnel-shaped magnetic field can be reliably formed on the surface of the rotating target of the second magnetic pole portion. The two tunnel-shaped magnetic fields can be brought closer together. Therefore, high-speed film formation is possible.

[0019] Effects of the Invention

[0020] The magnetron plasma film forming apparatus of the present invention is capable of high-speed film forming. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a cross-sectional view of a magnetron sputtering film forming apparatus as one embodiment of the present invention.

[0022] Figure 2 is set at Figure 1 An enlarged cross-sectional view of a magnetron plasma unit of a magnetron sputtering film-forming device.

[0023] Figure 3 yes Figure 2 An enlarged view of the magnet unit is shown.

[0024] Figure 4 This is a graph showing the relationship between the tangential direction component of the magnetic flux density and the sputtering angle θ.

[0025] Figure 5 yes Figure 3 The magnet unit shown is a modified example in which the magnetic pole portion has five regions.

[0026] Figure 6 yes Figure 3 The magnet unit shown in the figure has a modified example, and the magnetization direction in the magnetic pole portion is Figure 3 A modification in which the magnetization direction is reversed.

[0027] Figure 7 yes Figure 3 The magnet unit shown is a modified example in which two adjacent regions are continuous.

[0028] Figure 8 yes Figure 7 The modified example of the magnetic pole portion shown is a modified example in which the length in the second direction is shorter.

[0029] Fig. 9 It is an enlarged view of a magnet unit of a comparative example. DETAILED DESCRIPTION

[0030] <One embodiment of a magnetron plasma film forming apparatus>

[0031] Reference Figure 1 to Figure 4 An embodiment of the magnetron plasma film forming device of the present invention is described. Figure 3 In FIG. 1 , the magnet unit 18 (described later) is not hatched, and the magnetization directions of the first region 23 to the sixth region 28 (described later) are depicted with arrows.

[0032] like Figure 1 As shown, the magnetron sputtering film forming apparatus 1 is a roll-to-roll film forming apparatus that forms a film 13 (film formation) on the substrate 12 while conveying the substrate 12. The magnetron sputtering film forming apparatus 1 includes a conveying unit 2 and a film forming unit 3.

[0033] The transport unit 2 includes a transport casing 4 , a delivery roller 5 , a winding roller 6 , a guide roller 7 , and a vacuum pump 8 .

[0034] The transport case 4 has a substantially box shape that is long in one direction. The transport case 4 accommodates the feed roller 5 , the wind-up roller 6 , and the guide roller 7 .

[0035] The delivery roller 5 and the winding roller 6 are disposed at one end and the other end in one direction in the transport housing 4 , respectively.

[0036] A plurality of guide rollers 7 are disposed between the delivery roller 5 and the winding roller 6. The plurality of guide rollers 7 are disposed so that the substrate 12 is wound around the film forming roller 10.

[0037] The vacuum pump 8 is disposed in the transport housing 4 .

[0038] The film forming section 3 includes a film forming housing 9 , a film forming roller 10 , and a plurality of magnetron plasma units 11 .

[0039] The film forming housing 9 is continuous with the middle part of one direction of the conveying housing 4. The film forming housing 9 has a substantially box shape. The film forming housing 9 has a plurality of partition walls 14. The plurality of partition walls 14 extend toward the film forming roller 10 in a manner of dividing the film forming housing 9 into a plurality of (three) film forming chambers in the circumferential direction of the film forming roller 10. In addition, a sputtering gas supply device (not shown) is provided in the film forming housing 9. The film forming housing 9 accommodates the film forming roller 10 and a plurality of magnetron plasma units 11.

[0040] The axis of the film-forming roller 10 is perpendicular to one direction of the transport housing 4 .

[0041] The plurality of magnetron plasma units 11 are disposed in the plurality of film forming chambers, respectively, and are disposed radially outside the film forming roller 10 so as to face the film forming roller 10. The plurality of magnetron plasma units 11 are disposed along the circumferential direction of the film forming roller 10 so as to be spaced apart from each other.

[0042] The magnetron plasma units 11 adjacent to each other in the circumferential direction are partitioned by the partition wall 14. Each of the plurality of magnetron plasma units 11 includes a plasma housing 20, a first unit 15, and a second unit 16.

[0043] like Figure 2 As shown, the plasma housing 20 has a substantially box shape with one side opened toward the film-forming roller 10. The plasma housing 20 extends along the axis of the film-forming roller 10. The plasma housing 20 accommodates the first unit 15 and the second unit 16. The first unit 15 and the second unit 16 are arranged adjacent to each other with a gap along the circumferential direction of the film-forming roller 10. The first unit 15 and the second unit 16 face the film-forming roller 10 through the opening of the plasma housing 20.

[0044] The first unit 15 and the second unit 16 have the same structure except for the rotation direction of the rotating target 17 (described later). Therefore, the first unit 15 will be described in detail, and the second unit 16 will be described briefly.

[0045] like Figure 3 As shown, the first unit 15 includes a rotating target 17 and a magnet unit 18 .

[0046] The rotating target 17 has a cylindrical shape and has an axis parallel to the axis of the film-forming roller 10 (the center when viewed in section). The rotating target 17 can, for example, rotate in a direction opposite to the rotation direction of the film-forming roller 10 (can move in a swiveling manner). The rotating target 17 is electrically connected to a cathode source (not shown), thereby being able to function as a cathode. In addition, a target material is stacked on the outer peripheral surface of the rotating target 17, that is, the rotating target 17 has a material for forming the film 13 on the outer peripheral surface. As a material, for example, a metal oxide containing at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W can be listed. Specifically, for example, indium tin composite oxide (ITO), indium gallium zinc composite oxide (IGZO), indium gallium composite oxide (IGO), antimony tin composite oxide (ATO), etc. can be listed.

[0047] The magnet unit 18 is housed radially inside the rotating target 17. The magnet unit 18 includes a yoke 19, a first magnetic pole portion 21, and a second magnetic pole portion 22.

[0048] The yoke 19 has a narrow plate shape extending in the axial direction of the deposition roller 10. The yoke 19 has at least a surface (first direction one side, first main surface) facing the deposition roller 10. Examples of the material of the yoke 19 include metals such as iron and stainless steel.

[0049] The first magnetic pole portion 21 and the second magnetic pole portion 22 each have a quadrangular prism shape extending along the axial direction of the deposition roller 10. The first magnetic pole portion 21 and the second magnetic pole portion 22 are fixed to the surface of the yoke 19. The first magnetic pole portion 21 and the second magnetic pole portion 22 are arranged adjacent to each other in the second direction.

[0050] The second magnetic pole portion 22 is located on one side in the second direction of the first magnetic pole portion 21. Specifically, one side surface of the first magnetic pole portion 21 in the second direction and the other side surface of the second magnetic pole portion 22 in the second direction are in contact with each other.

[0051] The first magnetic pole portion 21 has a first region 23, a second region 24, and a third region 25 in sequence toward the second direction side (the side adjacent to the second magnetic pole portion 22) when viewed in section (a view along the first direction and a view in the second direction orthogonal to the first direction, the first direction being along a line segment connecting the axis of the film-forming roller 10 and the axis of the rotating target 17. Hereinafter, the view in section follows this definition). The first region 23, the second region 24, and the third region 25 exist respectively along the first direction.

[0052] The first region 23, the second region 24, and the third region 25 are divided regions formed by dividing the first magnetic pole portion 21 into three (for example, three equal parts) in the second direction. The first region 23, the second region 24, and the third region 25 each have a predetermined magnetization direction. The magnetization direction is a direction (direction) from the S pole toward the N pole, with Figure 3 Indicated by the thick arrows.

[0053] The first region 23, the second region 24, and the third region 25 have at least one of the first component and the second component obtained by decomposing the magnetization direction into the first direction and the second direction. In the present embodiment, the first region 23 and the third region 25 mainly have the first component, and the second region 24 mainly has the second component.

[0054] The magnetization direction in the first region 23 is oriented toward the other side of the first direction. That is, the magnetization direction of the first region 23 is oriented toward the side opposite to the film-forming roller 10. The components obtained by decomposing the magnetization direction in the first region 23 into the first direction and the second direction (hereinafter referred to as decomposed components) are mainly the first component, and there is almost no second component. However, the existence of a small second component in the first region 23 is allowed. The first component in the first region 23 is oriented toward the other side of the first direction.

[0055] The magnetization direction in the second region 24 is oriented toward the second direction. That is, the magnetization direction in the second region 24 is oriented toward the third region 25. The decomposed components of the magnetization direction in the second region 24 are mainly the second component, and there is almost no first component. However, the existence of a small first component in the second region 24 is allowed. The second component in the second region 24 is oriented toward the second direction.

[0056] The magnetization direction in the third region 25 is oriented toward the first direction. That is, the magnetization direction in the third region 25 is oriented toward the film-forming roller 10. The decomposed components of the magnetization direction in the third region 25 are mainly the first component, and there is almost no second component. However, the existence of a small second component in the third region 25 is allowed. The first component in the third region 25 is opposite to the first component in the first region 23, and specifically, is oriented toward the first direction.

[0057] The first magnetic pole portion 21 includes the first region 23, the second region 24, and the third region 25 having the above-mentioned decomposition components. Therefore, in the first magnetic pole portion 21, the magnetization direction forms a flow in a substantially U-shaped manner as follows: in the first region 23, it is mainly along the other side of the first direction, then in the second region 24, it is mainly along one side of the second direction and toward the third region 25, and in the third region 25, it is mainly along one side of the first direction. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 facing the first magnetic pole portion 21. This magnetic field is parabolic, and after once approaching the film-forming roller 10 from the surface corresponding to the third region 25, it is directed toward the surface corresponding to the first region 23.

[0058] The size of the first magnetic pole portion 21 is set in such a way that the maximum absolute value of the magnetic flux density corresponding to the first magnetic pole portion 21 is within a predetermined range (discussed later). Specifically, the ratio of the length in the second direction to the length in the first direction is, for example, greater than 0.3, preferably greater than 0.5, and more preferably greater than 0.7.

[0059] The ratio of the length of the first region 23 in the second direction to the length of the first magnetic pole portion 21 in the second direction is, for example, greater than 0.2, and, for example, less than 0.4. The ratio of the length of the second region 24 in the second direction to the length of the first magnetic pole portion 21 in the second direction is the same as described above. The ratio of the length of the third region 25 in the second direction to the length of the first magnetic pole portion 21 in the second direction is the same as described above.

[0060] In addition, the length of the first magnetic pole portion 21 in the first direction is, for example, more than 5 mm, preferably more than 10 mm, and, for example, less than 100 mm, preferably less than 50 mm. The length of the first magnetic pole portion 21 in the second direction is, for example, more than 5 mm, preferably more than 10 mm, and, for example, less than 100 mm, preferably less than 50 mm. The length of each of the first region 23, the second region 24, and the third region 25 in the second direction is, for example, more than 1 mm, preferably more than 3 mm, and, for example, less than 50 mm, preferably less than 15 mm.

[0061] The second magnetic pole portion 22 has, in sequence, a fourth region 26 as an example of the first region, a fifth region 27 as an example of the second region, and a sixth region 28 as an example of the third region, toward the other side in the second direction. Therefore, the fourth region 26, the fifth region 27, and the sixth region 28 are arranged in sequence toward the other side in the second direction (the side adjacent to the first magnetic pole portion 21). The fourth region 26, the fifth region 27, and the sixth region 28 are respectively present in the second magnetic pole portion 22 along the first direction, and are divided into three (for example, three equal parts) in the second direction. The fourth region 26, the fifth region 27, and the sixth region 28 have magnetization directions that are line-symmetrical with the first region 23, the second region 24, and the third region 25, respectively, with reference to the boundary line between the first magnetic pole portion 21 and the second magnetic pole portion 22.

[0062] The fourth region 26, the fifth region 27, and the sixth region 28 have at least one of the first component and the second component as decomposition components of the magnetization direction. In the present embodiment, the fourth region 26 and the sixth region 28 mainly have the first component, and the fifth region 27 mainly has the second component.

[0063] The magnetization direction in the fourth region 26 is oriented toward the other side of the first direction. That is, the magnetization direction in the fourth region 26 is oriented toward the side opposite to the film-forming roller 10. That is, the magnetization direction in the fourth region 26 is the same as the magnetization direction in the first region 23. The decomposed components of the magnetization direction in the fourth region 26 are mainly the first component, and there is almost no second component. However, the existence of a small second component in the fourth region 26 is allowed. The first component in the fourth region 26 is oriented in the same direction as the first component in the first region 23, and is oriented toward the other side of the first direction.

[0064] The magnetization direction in the fifth region 27 is oriented toward the other side of the second direction. That is, the magnetization direction of the fifth region 27 is oriented toward the sixth region 28. Thus, the magnetization direction of the fifth region 27 is opposite to that of the second region 24. The decomposed components of the magnetization direction in the fifth region 27 are mainly the second component, and there is almost no first component. However, the existence of a tiny first component in the fifth region 27 is allowed. The second component in the fifth region 27 is opposite to the second component in the second region 24 and is oriented toward the other side of the second direction.

[0065] The magnetization direction in the sixth region 28 is oriented toward the first direction. That is, the magnetization direction in the sixth region 28 is oriented toward the film-forming roller 10. The magnetization direction in the sixth region 28 is the same as the magnetization direction in the third region 25. The decomposed components of the magnetization direction in the sixth region 28 are mainly the first component, and there is almost no second component. However, the existence of a small second component in the sixth region 28 is allowed. The first component in the sixth region 28 is oriented in the same direction as the first component in the third region 25, and is oriented toward the first direction.

[0066] The second magnetic pole portion 22 includes the fourth region 26, the fifth region 27, and the sixth region 28 having the above-mentioned decomposed components, so that a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 that faces the second magnetic pole portion 22. This magnetic field is parabolic, moving from the surface corresponding to the sixth region 28 to the film-forming roller 10 once, and then toward the surface corresponding to the fourth region 26.

[0067] The dimensions of the second magnetic pole portion 22 are the same as those of the first magnetic pole portion 21 .

[0068] Examples of materials for the first magnetic pole portion 21 and the second magnetic pole portion 22 include permanent magnets such as neodymium magnets.

[0069] like Figure 2 As shown, the second unit 16 includes a rotating target 17 that can rotate in the same direction as the rotation direction of the deposition roller 10 , and the above-mentioned magnet unit 18 .

[0070] Furthermore, in this embodiment, the sputtering angle θ obtained as described below can be narrowed.

[0071] The tangential direction component of the magnetic flux density is measured in one direction of the circumferential direction of the rotating target on the outer peripheral surface of the rotating target 17. A sputtering angle θ formed by a line segment LS1 connecting a point MAX_P corresponding to the maximum tangential direction component of the magnetic flux density and the center of the rotating target 17 and a line segment LS2 connecting a point MIN_P corresponding to the minimum tangential direction component of the magnetic flux density and the center of the rotating target 17 is obtained. The sputtering angle θ is obtained by, for example, a simulation of a magnetic field using commercially available software.

[0072] Here, the tangential direction component of the magnetic flux density obtained by the above-mentioned simulation will be described.

[0073] like Figure 3As shown, in the first magnetic pole portion 21, the magnetization direction of the first region 23 is toward the other side of the first direction, the magnetization direction of the second region 24 is toward one side of the second direction, and the magnetization direction of the third region 25 is toward one side of the first direction. Therefore, as long as the tangential direction component of the magnetic flux density is measured from the surface of the rotating target 17 corresponding to the first region 23 toward the surface of the rotating target 17 corresponding to the third region 25, as shown in Figure 4 As shown, the minimum MIN_P of the magnetic flux density (that is, the strongest value of the magnetic field on the negative side) can be obtained.

[0074] like Figure 3 As shown, in the second magnetic pole portion 22, the magnetization direction of the fourth region 26 is toward the other side of the first direction, the magnetization direction of the fifth region 27 is toward the other side of the second direction, and the magnetization direction of the sixth region 28 is toward one side of the first direction. Therefore, as long as the tangential direction component of the magnetic flux density is measured from the surface of the rotating target 17 corresponding to the sixth region 28 toward the surface of the rotating target 17 corresponding to the fourth region 26, as shown in Figure 4 As shown, the maximum MAX_P of the magnetic flux density (that is, the strongest value of the magnetic field on the positive side) can be obtained.

[0075] Therefore, as long as the tangential direction component of the magnetic flux density is measured in the circumferential direction of the rotating target 17 and in a direction from the first region 23 toward the fourth region 26, as shown in FIG. Figure 4 As shown, the minimum MIN_P and maximum MAX_P of the magnetic flux density can usually be observed in turn.

[0076] The second unit 16 is the same as the first unit 15 .

[0077] In addition, the absolute value of the minimum MIN_P of the magnetic flux density and the maximum MAX_P of the magnetic flux density are, for example, close to each other, and are specifically the same.

[0078] The above-mentioned sputtering angle θ is, for example, less than 40 degrees, preferably less than 35 degrees, more preferably less than 30 degrees, and further preferably less than 25 degrees. As long as the sputtering angle θ is less than the above-mentioned upper limit, the circumferential distance between the plasma corresponding to the minimum magnetic flux density MIN_P and the plasma corresponding to the maximum magnetic flux density MAX_P on the radially outer side of the rotating target 17 is close. Therefore, the region with a high density of electrons released from the rotating target 17 can be concentrated. Therefore, high-speed film formation is possible.

[0079] On the other hand, the sputtering angle θ is, for example, 5 degrees or more.

[0080] The film formation rate can be obtained by simulation of a rarefied fluid using commercially available software. The film formation rate is also called a dynamic rate.

[0081] The maximum value of the absolute value of the magnetic flux density is, for example, 40 mT or more, preferably 80 mT or more, more preferably 120 mT or more, and, for example, 10,000 mT or less. As long as the maximum value of the absolute value of the magnetic flux density is greater than the above lower limit, plasma can be stably maintained.

[0082] Next, a method for forming the film 13 on the substrate 12 using the magnetron sputtering film forming apparatus 1 will be described.

[0083] First, prepare Figure 1 The magnetron sputtering film forming device 1 is shown.

[0084] Next, a long substrate 12 is placed in the magnetron sputtering film forming device 1. The substrate 12 is not particularly limited, and examples thereof include polymer films, glass films (thin film glass), etc. Examples of polymer films include polyester films (polyethylene terephthalate (PET) films, polybutylene terephthalate films, polyethylene naphthalate films, etc.), polycarbonate films, olefin films (polyethylene films, polypropylene films, cycloolefin films, etc.), acrylic films, polyethersulfone films, polyarylate films, melamine films, polyamide films, polyimide films, cellulose films, and polystyrene films.

[0085] In order to place the substrate 12 in the magnetron sputtering film forming device 1, as shown in FIG. Figure 1 As shown, the substrate 12 is wound around the delivery roller 5 , and then, while one end of the substrate 12 in the longitudinal direction is guided by a plurality of guide rollers 7 , the substrate 12 is wound around the film forming roller 10 and taken up by the take-up roller 6 .

[0086] Next, the vacuum pump 8 is driven to evacuate the inside of the transport housing 4 and the film forming housing 9. At the same time, a sputtering gas is supplied from a sputtering gas supply device (not shown) into the film forming housing 9. Examples of the sputtering gas include inert gases such as argon gas and reactive gases further containing oxygen.

[0087] Next, while the substrate 12 is continuously conveyed from the delivery roll 5 toward the take-up roll 6 , a cathode voltage is applied to the rotating target 17 . As a result, electrons are released from the rotating target 17 .

[0088] Then, the above-mentioned electrons are respectively held in the first unit 15 and the second unit 16 for a long period of time.

[0089] Then, atoms (specifically, argon atoms) from the sputtering gas efficiently collide with the rotating target 17, whereby particles of the material of the rotating target 17 are attached from the rotating target 17 to the substrate 12 on the outer peripheral surface of the film-forming roller 10. Figure 1 As shown, a film 13 is formed on a substrate 12 by sputtering.

[0090] <Function and Effect of One Embodiment>

[0091] Furthermore, in the first magnetic pole portion 21 of the magnetron sputtering film forming device 1, the magnetization direction forms a substantially U-shaped flow as follows: in the first region 23, it is mainly along the other side of the first direction, then in the second region 24, it is mainly along one side of the second direction and toward the third region 25, and in the third region 25, it is mainly along one side of the first direction. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 of the first magnetic pole portion 21.

[0092] In addition, in the second magnetic pole portion 22 of the magnetron sputtering film forming device 1, the magnetization direction forms a flow in a substantially U-shaped shape as follows: in the fourth region 26, it is mainly along the other side of the first direction, and then in the fifth region 27, it is mainly along the other side of the second direction and toward the sixth region 28, and in the sixth region 28, it is mainly along one side of the first direction. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 of the second magnetic pole portion 22.

[0093] The tunnel-shaped magnetic field formed on the surface of the rotating target 17 of the first magnetic pole portion 21 and the tunnel-shaped magnetic field formed on the surface of the rotating target 17 of the second magnetic pole portion 22 can be close to each other. In other words, the above-mentioned sputtering angle θ can be narrowed. As a result, the region where the density of electrons released from the rotating target 17 is high in the first unit 15 and the region where the density of electrons released from the rotating target 17 is high in the second unit 16 can be concentrated.

[0094] Therefore, according to the magnetron sputtering film forming apparatus 1 , the film 13 can be formed at a high speed.

[0095] In this embodiment, the first region 23 and the third region 25 each mainly have the first component, and the second region 24 mainly has the second component. The fourth region 26 and the sixth region 28 each mainly have the first component, and the fifth region 27 mainly has the second component. Therefore, although the first magnetic pole portion 21 and the second magnetic pole portion 22 each have a simple structure, high-speed film formation is possible.

[0096] <Modification>

[0097] In the following modifications, the same components and processes as those of the above-mentioned one embodiment are marked with the same reference numerals, and their detailed description is omitted. In addition, each modification can achieve the same effects as those of the one embodiment unless otherwise specified. Moreover, the one embodiment and its modifications can be appropriately combined.

[0098] In one embodiment, the first magnetic pole portion 21 and the second magnetic pole portion 22 are formed of different members, but may be formed of one member and integrally.

[0099] In addition, in the first magnetic pole portion 21, the first region 23, the second region 24, and the third region 25 may be composed of three independent components, or may be integrally composed of one component using, for example, a polar anisotropic magnet. In the second magnetic pole portion 22, the fourth region 26, the fifth region 27, and the sixth region 28 may be composed of three independent components, or may be integrally composed of one component using, for example, a polar anisotropic magnet.

[0100] In one embodiment, the first magnetic pole portion 21 has three regions (a first region 23, a second region 24, and a third region 25), but the number of regions is not particularly limited and may be more than 4. In addition, in one embodiment, the second magnetic pole portion 22 has three regions (a fourth region 26, a fifth region 27, and a sixth region 28), but the number of regions is not particularly limited and may be more than 4.

[0101] Figure 5 FIG. 2 shows a modified example in which the first magnetic pole portion 21 has five regions and the second magnetic pole portion 22 has five regions. Figure 5 In the embodiment, the first magnetic pole portion 21 has a first main region 31, a first auxiliary region 32, a second region 24, a third auxiliary region 33, and a third main region 34 in sequence toward the second direction. The first main region 31 and the first auxiliary region 32 of the modified example are equivalent to the first region 23 of one embodiment. The third auxiliary region 33 and the third main region 34 of the modified example are equivalent to the third region 25 of one embodiment.

[0102] The resolved component of the magnetization direction of the first main region 31 is the first component. The first component is oriented toward the other side in the first direction.

[0103] The decomposed components of the magnetization direction of the first auxiliary region 32 are the first component and the second component. The first component is oriented to the other side of the first direction. The second component is oriented to one side of the second direction. The second direction length of the first auxiliary region 32 is, for example, similar to, or more specifically, the same as, the second direction length of the first main region 31. Therefore, in the first region 23 composed of the first main region 31 and the first auxiliary region 32, the first component is larger than the second component.

[0104] The decomposed component of the third main region 34 is the first component. The first component is oriented toward one side in the first direction.

[0105] The decomposed components of the magnetization direction of the third auxiliary region 33 are the first component and the second component. The first component is oriented toward the first direction. The second component is oriented toward the second direction. The second direction length of the third auxiliary region 33 is similar to, and specifically the same as, the second direction length of the third main region 34. Therefore, in the third region 25 composed of the third main region 34 and the third auxiliary region 33, the first component is larger than the second component.

[0106] The second magnetic pole portion 22 has a fourth main region 35, a fourth auxiliary region 36, a fifth region 27, a sixth auxiliary region 37, and a sixth main region 38 in order toward the other side in the second direction. The fourth main region 35 and the fourth auxiliary region 36 of this modification are equivalent to the fourth region 26 of one embodiment. The sixth auxiliary region 37 and the sixth main region 38 of the modification are equivalent to the sixth region 28 of one embodiment.

[0107] The resolved component of the magnetization direction of the fourth main region 35 is the first component. The first component is oriented to the other side in the first direction.

[0108] The decomposed components of the magnetization direction of the fourth auxiliary region 36 are the first component and the second component. The first component is oriented to the other side of the first direction. The second component is oriented to the other side of the second direction. The second direction length of the fourth auxiliary region 36 is, for example, similar to, or more specifically, the same as, the second direction length of the fourth main region 35. Therefore, in the fourth region 26 composed of the fourth main region 35 and the fourth auxiliary region 36, the first component is larger than the second component.

[0109] The decomposed component of the sixth main region 38 is the first component. The first component is oriented toward one side in the first direction.

[0110] The decomposed components of the magnetization direction of the sixth auxiliary region 37 are the first component and the second component. The first component is oriented to one side of the first direction. The second component is oriented to the other side of the second direction. The second direction length of the sixth auxiliary region 37 is similar to, and specifically the same as, the second direction length of the sixth main region 38. Therefore, in the sixth region 28 composed of the sixth main region 38 and the sixth auxiliary region 37, the first component is larger than the second component.

[0111] As long as the above-mentioned tunnel-shaped magnetic field is formed on the surface of the rotating target 17, the orientation of the magnetization direction in the first magnetic pole portion 21 and the second magnetic pole portion 22 is not limited. In one embodiment, the magnetization directions of the first region 23, the second region 24, the third region 25, the fourth region 26, the fifth region 27, and the sixth region 28 may be reversed. Specifically, Figure 6 As shown, the magnetization direction in the first region 23 and the fourth region 26 is toward one side of the first direction. The magnetization direction in the second region 24 is toward the other side of the second direction. The magnetization direction in the fifth region 27 is toward one side of the second direction. The magnetization direction in the third region 25 and the sixth region 28 is toward the other side of the first direction. Figure 6In the illustrated modification, the tunnel-shaped magnetic field formed on the surface of the rotating target 17 opposite to the first magnetic pole portion 21 is a parabola-shaped magnetic field that moves from the surface corresponding to the first region 23 to the surface corresponding to the third region 25 after once approaching the film-forming roller 10. The tunnel-shaped magnetic field formed on the surface of the rotating target 17 opposite to the second magnetic pole portion 22 is a parabola-shaped magnetic field that moves from the surface corresponding to the fourth region 26 to the surface corresponding to the film-forming roller 10 after once approaching the film-forming roller 10.

[0112] exist Figure 7 In the illustrated modification, in the first magnetic pole portion 21 , the first region 23 and the second region 24 are continuous, and the second region 24 and the third region 25 are continuous.

[0113] In the first region 23, the first component decreases toward the second region 24. That is, the magnetization direction in the first region 23 gradually (continuously) becomes more inclined with respect to the first direction as it approaches the second region 24. The first component of the first region 23 is directed toward the other side of the first direction.

[0114] In the third region 25, the first component decreases toward the second region 24. That is, the magnetization direction in the third region 25 gradually (continuously) becomes more inclined with respect to the first direction as it approaches the second region 24. The first component of the third region 25 is oriented toward the first direction.

[0115] In the second region 24, in an end region close to the first region 23, the first component is directed toward the other side of the first direction and is small. In addition, in the other end region close to the third region 25, the first component is directed to one side of the first direction and is small. In the intermediate region between them, as a decomposed component, there is essentially no first component, and only the second component.

[0116] The magnetization direction in the first magnetic pole portion 21 forms a substantially parabola that moves from the first direction of the first region 23 on one side, approaches the first direction of the second region 24 on the other side, and then reaches the first direction of the third region 25 on the other side.

[0117] In the second magnetic pole portion 22 , the fourth region 26 and the fifth region 27 are continuous, and the fifth region 27 and the sixth region 28 are continuous.

[0118] In the fourth region 26, the first component decreases toward the fifth region 27. That is, the magnetization direction in the fourth region 26 gradually (continuously) becomes more inclined with respect to the first direction as it approaches the fifth region 27. The first component of the fourth region 26 is directed toward the other side of the first direction.

[0119] In the sixth region 28, the first component decreases toward the fifth region 27. That is, the magnetization direction in the sixth region 28 gradually (continuously) becomes more inclined with respect to the first direction as it approaches the fifth region 27. The first component of the sixth region 28 is oriented toward the first direction.

[0120] In one end region of the 5th region 27 close to the 4th region 26, the first component is directed toward the other side of the first direction and is small. In addition, in the other end region of the 5th region 27 close to the 6th region 28, the first component is directed to one side of the first direction and is small. In the intermediate region between them, there is essentially no first component as a decomposed component, and only the second component becomes.

[0121] Therefore, the magnetization direction in the second magnetic pole portion 22 forms a substantially parabola that moves from the first direction of the fourth region 26 on one side, approaches the first direction of the fifth region 27 on the other side, and then reaches the first direction of the sixth region 28 on the other side.

[0122] exist Figure 7 In the magnetron sputtering film forming apparatus 1 shown, the first region 23, the second region 24 and the third region 25 are continuous in the first magnetic pole portion 21, so that a parabolic magnetization direction is formed. Therefore, a tunnel-shaped magnetic field is reliably formed on the surface of the rotating target 17 corresponding to the first magnetic pole portion 21.

[0123] In the second magnetic pole portion 22 , the fourth region 26 , the fifth region 27 , and the sixth region 28 are continuous, and thus form a parabolic magnetization direction. Therefore, a tunnel-shaped magnetic field is reliably formed on the surface of the rotating target 17 corresponding to the second magnetic pole portion 22 .

[0124] The two tunnel-shaped magnetic fields can be brought closer together, and the region with a high density of electrons released from the rotating target 17 in the first unit 15 and the region with a high density of electrons released from the rotating target 17 in the second unit 16 can be further concentrated. Therefore, high-speed film formation is possible.

[0125] Figure 8 yes Figure 7 The illustrated modification is one in which the second direction lengths of the first magnetic pole portion 21 and the second magnetic pole portion 22 are too short.

[0126] In this modification, the first magnetic pole portion 21 also includes the above-mentioned first region 23, the second region 24, and the third region 25. The second magnetic pole portion 22 includes the above-mentioned fourth region 26, the fifth region 27, and the sixth region 28.

[0127] Example

[0128] The following represents embodiments and comparative examples, and the present invention is further specifically described. In addition, the present invention is not limited to any embodiment and comparative example. In addition, the specific numerical values ​​such as the mixing ratio (containing ratio), physical property values, and parameters used in the following description can be replaced by the upper limit value (defined as "below", "less than" numerical value) or the lower limit value (defined as "above", "exceeding" numerical value) of the mixing ratio (containing ratio), physical property values, and parameters corresponding to them recorded in the above-mentioned "specific embodiments".

[0129] Example 1

[0130] right Figures 1 to 3 The magnetron sputtering film forming apparatus 1 according to the embodiment shown was simulated.

[0131] The dimensions of the first magnetic pole portion 21 and the second magnetic pole portion 22 are as shown in Table 1.

[0132] Example 2

[0133] The same method as in Example 1 was used except that the magnetization directions of the first region 23 to the sixth region 28 were reversed. Figure 6 The magnetron sputtering film-forming apparatus 1 shown was simulated.

[0134] Example 3

[0135] like Figure 7 As shown, the first region 23 and the second region 24 are continuous in a manner that the magnetization direction of the first magnetic pole portion 21 forms a parabola, and the second region 24 and the third region 25 are continuous. In addition, the fourth region 26 and the fifth region 27 are continuous in a manner that the magnetization direction of the second magnetic pole portion 22 forms a parabola, and the fifth region 27 and the sixth region 28 are continuous. Figure 7 The magnetron sputtering film-forming apparatus 1 shown was simulated.

[0136] Example 4

[0137] The same method as in Example 3 was used except that the second direction length of each of the first magnetic pole portion 21 and the second magnetic pole portion 22 was changed from 20 mm to 8 mm. Figure 8 The magnetron sputtering film-forming apparatus 1 shown was simulated.

[0138] Comparative Example 1

[0139] The first magnetic pole portion 21 does not have the first region 23, and the second magnetic pole portion 22 does not have the fourth region 26. In addition, the dimensions are changed as shown in Table 2. Fig. 9 The magnetron sputtering film-forming apparatus 1 shown was simulated.

[0140] <Evaluation>

[0141] The following items were evaluated for the magnetron sputtering film forming apparatus 1. Table 3 shows the results.

[0142] (1) Maximum and minimum values ​​of sputtering angle θ and magnetic flux density

[0143] For the magnetron sputtering film forming apparatuses 1 of Examples 1 to 4 and Comparative Example 1, the maximum and minimum values ​​of the sputtering angle θ and the magnetic flux density were obtained by simulation of the magnetic field by the finite element method using the following software.

[0144] Software name: JMAG (manufactured by JSOL Co., Ltd.)

[0145] Calculation method: Finite element method

[0146] (2) Film forming speed

[0147] The film forming rates of the magnetron sputtering film forming apparatus 1 of each of Examples 1 to 3 and Comparative Example 1 were obtained by simulation of a rarefied fluid using the following software. The film forming rates of Examples 1 to 3 were obtained as ratios when the film forming rate of Comparative Example 1 was set to 100.

[0148] Software name: DSMC-Neutrals (manufactured by Wave Front Co., Ltd.)

[0149] Calculation method: Direct Simulation Monte Carlo (DSMC) method

[0150] [Table 1]

[0151]

[0152] [Table 2]

[0153]

[0154] [Table 3]

[0155]

[0156] In addition, the above invention is provided as an exemplary embodiment of the present invention, but this is only a general illustration and is not to be construed as limiting. Modifications of the present invention that are obvious to those skilled in the art are included in the above claims.

[0157] Industrial Applicability

[0158] A magnetron sputtering film forming device is used for film formation.

[0159] Description of Reference Numerals

[0160] 1. Magnetron sputtering film-forming device; 10. Film-forming roller; 11. Magnetron plasma unit; 13. Film; 17. Rotating target; 18. Magnet unit; 21. First magnetic pole portion; 22. Second magnetic pole portion; 23. First region; 24. Second region; 25. Third region; 26. Fourth region; 27. Fifth region; 28. Sixth region.

Claims

1. A magnetron plasma film forming device, characterized in that: The magnetron plasma film forming device comprises: a film forming roller; and a magnetron plasma unit, which is arranged opposite to the film forming roller, The magnetron plasma unit comprises: a rotating target whose axis extends in the same direction as the axis of the film-forming roller; and a magnet unit disposed radially inward of the rotating target, The magnet unit comprises: a first magnetic pole portion; and a second magnetic pole portion adjacent to the first magnetic pole portion in a second direction orthogonal to the first direction, the first direction being along a line segment connecting the axis of the film-forming roller and the axis of the rotary target, The first magnetic pole portion and the second magnetic pole portion each have a quadrangular prism shape extending along the axial direction of the film-forming roller. The first magnetic pole portion and the second magnetic pole portion are arranged adjacent to each other in the second direction, The first magnetic pole portion has a first region, a second region, and a third region in sequence on one side facing the second direction, and the second magnetic pole portion has a first region, a second region, and a third region in sequence on the other side facing the second direction. The first region, the second region, and the third region each have at least one of a first component and a second component obtained by decomposing a magnetization direction into the first direction and the second direction. In the first region, the first component is larger than the second component, In the second region, the first component is smaller than the second component, In the third region, the first component is larger than the second component and is opposite to the first component in the first region. The ratio of the second direction length of each of the first region, the second region, and the third region to the second direction length of the first magnetic pole portion is greater than or equal to 0.2 and less than or equal to 0.

4. A ratio of a second direction length of each of the first region, the second region, and the third region to a second direction length of the second magnetic pole portion is greater than or equal to 0.2 and less than or equal to 0.

4.

2. The magnetron plasma film forming device according to claim 1, characterized in that: The first region and the third region each mainly have the first component, The second region mainly includes the second component.

3. The magnetron plasma film forming device according to claim 1, characterized in that: The first region is continuous with the second region, The second region is continuous with the third region, In the first region, the first component decreases toward the second region, and in the third region, the first component decreases toward the second region.

Images