High-speed random number generator

Abstract

The present invention provides a high-speed random number generator, comprising: a microcavity chaotic laser (1), used for generating a chaotic optical signal with a large spectrum bandwidth by using inter-mode interaction under the condition of no external light injection, external light feedback or external photoelectric feedback, wherein the microcavity chaotic laser (1) is an on-chip semiconductor spontaneous microcavity chaotic laser; an optical fiber coupler (2), used for splitting the chaotic optical signal into a first optical signal and a second optical signal; a delay optical fiber (3), used for delaying the first optical signal to obtain a third optical signal; a balanced detector (4), used for performing balanced detection on the second optical signal and the third optical signal with a time difference, to obtain the signal difference of the two chaotic electrical signals; and a random number extraction module (5), used for performing quantization processing on the electrical signal of the balanced detection, to generate a random number sequence. The high-speed random number generator has a high random number generation rate, a simple structure, a small volume, and a stable system.

Description

Technical Field

[0001] The present disclosure relates to technical fields such as confidential communication, security encryption, and computer simulation, and in particular to a high-speed random number generator. Background Art

[0002] Random numbers are widely used in fields such as security encryption, confidential communications, and computer simulation. Current random number generators mainly include pseudo-random number generators and true random number generators. Pseudo-random numbers generated based on deterministic algorithms are periodic and can be cracked under high-speed acquisition. True random numbers generated based on conventional physical random entropy sources such as photon noise, thermal noise, and frequency jitter have strong randomness, but the generation rate is low, only at the Mbit / s level.

[0003] In recent years, random numbers generated by chaotic signals generated by semiconductor chaotic lasers as entropy sources have been widely studied due to their strong randomness and high rate. However, the semiconductor chaotic laser systems based on discrete devices of light injection, light feedback or photoelectric feedback are complex, resulting in large size and poor stability of random number devices built based on them. Integrated chaotic lasers based on the principle of optical feedback have achieved volume reduction, but require complex processes such as secondary epitaxy, high production costs, and are limited by the relaxation oscillation frequency of the laser. The chaotic bandwidth of chaotic lasers under existing integrated technology is not high, which greatly limits the rate of generating random numbers. The inherent periodicity introduced by feedback will also reduce the randomness of the chaotic entropy source, and also limit the improvement of the random number rate. In addition, the intensity distribution of the chaotic signal generated by the chaotic laser has certain bias problems, which will reduce randomness and affect the improvement of the random number rate. Additional means are needed to improve the intensity symmetry. Summary of the invention

[0004] In view of the above problems, the present disclosure provides a high-speed random number generator to solve at least one of the above technical problems.

[0005] The present invention provides a high-speed random number generator, comprising: a microcavity chaotic laser, which is used for generating a chaotic optical signal with a large spectrum bandwidth by using inter-mode interaction under the condition of no external light injection, external light feedback or external photoelectric feedback, wherein the microcavity chaotic laser is an on-chip semiconductor spontaneous microcavity chaotic laser; an optical fiber coupler, which is used for splitting the chaotic optical signal into a first optical signal and a second optical signal; a time-delay optical fiber, which is used for delaying the first optical signal to obtain a third optical signal; a balanced detector, which is used for balanced detection of the second optical signal and the third optical signal with a time difference; and a random number extraction module, which is used for quantizing the electrical signal of the balanced detection to generate a random number sequence.

[0006] According to an embodiment of the present disclosure, a microcavity chaotic laser includes: a semiconductor microcavity, whose cross section is a regular polygon or an arc-edged regular polygon, for forming total internal reflection of light, wherein the semiconductor microcavity is an active cavity; a hole, arranged inside the semiconductor microcavity, for regulating the number of modes and the mode interval, the hole being a hole of a specific radius, for suppressing high-order transverse modes and regulating the number of modes, so as to utilize the intracavity optical resonance effect to generate a chaotic optical signal with a large spectral bandwidth; an annular electrode window, located at the upper end of the semiconductor microcavity and coaxial with the hole, for performing non-uniform current injection to realize nonlinear interaction of modes to generate a chaotic optical signal; and a waveguide, contacting and connected with the outer wall of the semiconductor microcavity, for directional output of the chaotic optical signal.

[0007] According to an embodiment of the present disclosure, the active region structure of the semiconductor microcavity is a quantum well or quantum dot structure.

[0008] According to an embodiment of the present disclosure, when the cross section of the semiconductor microcavity is an arc-sided regular polygon, the size of the arc-sided regular polygon satisfies the following relationship:

[0009]

[0010] Among them, a is the side length of the regular polygon inscribed in the arc-edge regular polygon, r is the radius of the arc edge, and δ is the deformation of the arc edge.

[0011] According to an embodiment of the present disclosure, the semiconductor microcavity is a square, hexagon, octagon, arc-edge quadrilateral, arc-edge hexagon or arc-edge octagon structure.

[0012] According to an embodiment of the present disclosure, the light outlet of the waveguide is a cleavage surface or an end surface coating structure.

[0013] According to an embodiment of the present disclosure, the cross-section of the hole includes a triangle, a quadrilateral, a pentagon, a hexagon, an ellipse, or a circle.

[0014] According to an embodiment of the present disclosure, a balanced detector performs balanced detection on a second optical signal and a third optical signal having a time difference, including: the balanced detector is used to detect the second optical signal to obtain a first electrical signal, detect the third optical signal to obtain a second electrical signal, and perform a differential operation on the first electrical signal and the second electrical signal to obtain an electrical signal difference.

[0015] According to an embodiment of the present disclosure, the random number extraction module is a one-bit comparator or a multi-bit analog-to-digital converter.

[0016] At least one of the above technical solutions adopted in the embodiments of the present disclosure can achieve the following beneficial effects:

[0017] Using semiconductor microcavity chaos laser as the physical entropy source for random number generation can generate spontaneous chaos without external light injection, external light feedback or external photoelectric feedback. There is no external cavity feedback delay peak, the chaotic signal quality is high, which is conducive to the improvement of random number generation rate. In addition, the chip-level chaos entropy source has a simple structure, which greatly simplifies the random number system.

[0018] Furthermore, by etching a hole of a specific radius in the center of the cavity, the number of modes and the mode spacing can be effectively controlled, and the optical-optical resonance effect can be used to greatly improve the chaotic bandwidth and increase the random number generation rate.

[0019] Furthermore, balanced detection is achieved through time-delay optical fiber and balanced detector, which improves the symmetry of the intensity distribution of chaotic signals and can be used to achieve real-time random number generation.

[0020] In addition, the polygonal microcavity chaotic laser has a simple manufacturing process, does not require secondary epitaxy, does not require complex active and passive integration technology, does not require hybrid integration technology, and has low cost, thereby reducing the cost of random number devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] For a more complete understanding of the present disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, in which:

[0022] Figure 1 The system structure diagram of the high-speed random number generator provided by the embodiment of the present disclosure is schematically shown;

[0023] Figure 2 The schematic diagram of the planar structure of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure is shown;

[0024] Figure 3 The schematic diagram of the three-dimensional structure of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure is shown;

[0025] Figure 4 A schematic diagram of the change of the simulated mode Q value and the first-order mode interval Δf of the fundamental mode of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure when the hole has different inner diameters Rin is shown;

[0026] Figure 5 Schematically showing the fine spectrum diagram of steady state, periodic state and chaotic state experienced during the chaotic state generation process of the broadband microcavity chaotic laser according to the embodiment of the present disclosure;

[0027] Figure 6 The spectrum diagram of the steady state, periodic state and chaotic state experienced during the chaotic state generation process of the broadband microcavity chaotic laser according to the embodiment of the present disclosure is schematically shown;

[0028] Figure 7The detailed spectrum diagram of the broadband microcavity chaotic laser according to the embodiment of the present disclosure when the injection current is 20mA is schematically shown;

[0029] Figure 8 The chaotic spectrum diagram of the broadband microcavity chaotic laser under 20mA current according to the embodiment of the present disclosure is schematically shown;

[0030] Fig. 9 Schematically shows an intensity distribution histogram obtained by directly detecting a chaotic optical signal according to an embodiment of the present disclosure;

[0031] Fig.10 The intensity distribution histogram of the chaotic optical signal of the broadband microcavity chaotic laser according to the embodiment of the present disclosure after being detected by optical fiber delay balance is schematically shown;

[0032] Fig.11 Schematically shows the probability distribution of quantization values ​​after retaining the 5 least significant bits according to an embodiment of the present disclosure;

[0033] Fig.12 The autocorrelation function after retaining the 5 least significant bits according to an embodiment of the present disclosure is schematically shown.

[0034] Description of reference numerals:

[0035] 1-microcavity chaotic laser, 2-fiber coupler, 3-delay fiber, 4-balanced detector, 5-random number extraction module;

[0036] 11-semiconductor microcavity, 12-hole, 13-annular electrode window, 14-waveguide;

[0037] 101 - N electrode layer, 102 - N-type substrate, 103 - lower confinement layer, 104 - active region layer, 105 - upper confinement layer, 106 - ohmic contact layer, 107 - P electrode layer. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0039] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0040] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0041] In order to solve the problems of complex system and low random number rate of existing random number generation schemes, the present invention proposes a high-speed random number generator based on broadband microcavity chaotic laser. By adopting broadband on-chip semiconductor spontaneous microcavity chaotic laser, the randomness of chaotic light is greatly expanded, the system complexity of chaotic entropy source is simplified, and the symmetry of chaotic light is improved by using optical delay balance detection scheme. The speed of random number generated by random number extraction module is greatly improved. The whole random number system has simple structure, strong system stability and high random number rate.

[0042] Figure 1 The system structure diagram of the high-speed random number generator provided by the embodiment of the present disclosure is schematically shown.

[0043] like Figure 1 As shown, the high-speed random number generator may include, for example, a microcavity chaotic laser 1 , a fiber coupler 2 , a delay fiber 3 , a balanced detector 4 and a random number extraction module 5 .

[0044] The microcavity chaotic laser 1 is a broadband on-chip semiconductor spontaneous microcavity chaotic laser, which is used to generate chaotic optical signals by using the interaction between modes without external light injection, external light feedback or external photoelectric feedback.

[0045] The optical fiber coupler 2 is used to split the chaotic optical signal into two beams of light, a first optical signal and a second optical signal.

[0046] The delay optical fiber 3 is connected to an output end of the optical fiber coupler 2 and is used to delay the first optical signal to obtain a third optical signal, wherein the third optical signal is delayed with respect to the second optical signal.

[0047] The balanced detector 4 includes two input ends, one input end is connected to the time-delay optical fiber 3, and the other input end is directly connected to the optical fiber coupler 2, and is used to perform balanced detection on the second optical signal and the third optical signal with a time difference, so as to improve the symmetry of the intensity distribution of the original chaotic signal. The balanced detection process is as follows: the balanced detector 4 simultaneously detects the second optical signal to obtain the first electrical signal and detects the third optical signal to obtain the second electrical signal, and performs a difference between the first electrical signal and the second electrical signal to obtain an electrical signal difference.

[0048] The random number extraction module 5 is used to perform quantization processing on the electrical signal of the balanced detection, that is, to perform quantization processing on the chaotic electrical signal with improved intensity distribution symmetry to obtain a binary random number sequence.

[0049] Figure 2 The planar structural diagram of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure is schematically shown. Figure 3 The three-dimensional structure diagram of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure is schematically shown.

[0050] like Figure 2 and Figure 3 As shown, the entire laser material layer of the microcavity chaotic laser 1 may include an N-electrode layer 101, an N-type substrate layer 102, a lower limit layer 103, an active region layer 104, an upper limit layer 105, an ohmic contact layer 106 and a P-electrode layer 107 from bottom to top, and a semiconductor microcavity 11, a hole 12, an annular electrode window 13 and a waveguide 14 are etched on the above material layers. Among them, the cross section of the semiconductor microcavity 11 is a regular polygon or a regular polygon with arc edges, and the semiconductor microcavity 11 is an active cavity. Its material structure may be a quantum well or a quantum dot structure, and total internal reflection of light may be formed. The hole 12 is arranged inside the semiconductor microcavity 11, and is used to control the number of modes and the mode interval. The hole 12 may be coaxial with the semiconductor microcavity 11 or not. The annular electrode window 13 is located at the upper end of the semiconductor microcavity 11, and is coaxial with the hole 12, and is used to perform non-uniform current injection, realize nonlinear interaction of modes, and generate chaotic optical signals. The waveguide 14 is in contact with the outer wall of the semiconductor microcavity 11 and is used for directional output of chaotic optical signals.

[0051] Further, see Figure 2 , a is the side length of the original regular polygon (the regular polygon inscribed in the arc-edge regular polygon), d is the waveguide width, δ is the arc-edge deformation (i.e., the farthest distance between the arc-edge and the side length of the connected square), r is the arc-edge radius, Rin is the inner diameter of the hole, h is the waveguide translation distance, and w is the width of the annular electrode window. In the case where the cross section of the semiconductor microcavity 11 is an arc-edge regular polygon, the size of the arc-edge regular polygon satisfies the following relationship:

[0052]

[0053] In one embodiment of the present disclosure, the semiconductor microcavity 11 is a square, hexagon, octagon, arc-edge quadrilateral, arc-edge hexagon or arc-edge octagon structure, etc., without specific limitation.

[0054] In one embodiment of the present disclosure, the cross-section of the hole 12 includes a triangle, a quadrilateral, a pentagon, a hexagon, an ellipse, or a circle, without specific limitation.

[0055] In one embodiment of the present disclosure, the ohmic contact window 13 is in a ring shape.

[0056] In one embodiment of the present disclosure, the waveguide 14 is in a straight line shape and is perpendicular to a diagonal line of the semiconductor microcavity 11. The light outlet of the waveguide 14 is a cleavage surface or an end surface coating structure.

[0057] According to the microcavity chaotic laser of the embodiment of the present disclosure, the chaotic optical power can be increased by increasing the size of the polygonal microcavity chaotic laser; in order to solve the problem that the chaotic laser cannot be generated due to multi-mode lasing caused by the increase in size, a hole 12 is etched in the semiconductor microcavity 11 to suppress the high-order transverse mode and reduce the number of modes to ensure the output of high-power chaotic laser; at the same time, by adjusting the shape and size of the hole 12, a hole 12 with a specific radius is formed, and the mode interval and the number of modes are further effectively controlled, and the optical resonance effect in the cavity can be used to achieve an increase in the chaotic bandwidth; further, by adjusting the connection position of the waveguide 14, the coupling output efficiency of the laser can be improved.

[0058] In one embodiment of the present disclosure, the length of the delay optical fiber 3 is selected so that when the two beams of light separated by the optical fiber coupler enter the balanced detector 4 for detection, there is a time delay between the two chaotic lights, thereby reducing their correlation.

[0059] In one embodiment of the present disclosure, the random number extraction module 5 may be a one-bit comparator or a multi-bit analog-to-digital converter, which converts the chaotic electrical signal into a continuous binary random number sequence.

[0060] In order to further verify the advantages of the high-speed random number generator provided by the embodiments of the present disclosure, some specific experimental data are listed below for demonstration.

[0061] In the disclosed embodiment, the substrate material of the microcavity chaotic laser is InP, the active layer is an AlGaInAs multi-quantum well structure, the semiconductor microcavity is an arc-edge quadrilateral cavity with a side length a=20μm, a deformation amount δ=2.17μm, a waveguide width d=1.5μm, and a circular hole inner diameter Rin=5.5μm, located in the arc-edge quadrilateral cavity, and can be etched in the arc-edge quadrilateral cavity by semiconductor standard photolithography and etching processes, or other processes. The waveguide and the arc-edge quadrilateral cavity use the same material and the same process, and the waveguide is translated upward in the direction perpendicular to the horizontal diagonal. In this example, the waveguide light-emitting surface adopts a natural cleavage surface, but the end face coating method is not excluded. In order to achieve non-uniform injection of current, a ring electrode window structure is designed in this example, and the window width w = 4μm. The selected fiber coupler splitting ratio is 50%:50%, the delay fiber length is 1m, and the bandwidth of the selected balanced photodetector is 43GHz. The electrical signal after balanced detection is collected by an 8-bit analog-to-digital converter with a sampling rate of 100Gas / s. After that, the method of retaining the least significant bit is used for post-processing. A random number sequence that passes the standard randomness test set is obtained while retaining the 5 least significant bits. The random number rate can reach 500Gbit / s.

[0062] Figure 4 A schematic diagram is given of the changes in the simulated mode Q value and the first-order mode interval Δf of the fundamental mode of the broadband microcavity chaotic laser provided by the embodiment of the present disclosure when the hole has different inner diameters Rin.

[0063] from Figure 4 It can be seen that when the inner diameter is less than 3μm, the Q values ​​of the fundamental mode, the first-order mode and the second-order mode are not affected; when the inner diameter is greater than 3μm, as Rin increases, the Q values ​​of the fundamental mode, the first-order mode and the second-order mode gradually decrease. When Rin is less than 6.5μm, the mode spacing Δf between the fundamental mode and the first-order mode remains basically unchanged at less than 10GHz. When Rin is greater than 6.5μm, the mode spacing Δf between the fundamental mode and the first-order mode increases significantly, which does not meet the conditions for the generation of chaotic nonlinearity. The simulation results show that the inner diameter size of the hole can significantly adjust the number of modes and the mode spacing. When the inner diameter Rin is 5.5μm, the mode Q values ​​of the fundamental mode, the first-order mode and the second-order mode are all above 10000, which theoretically supports three-mode lasing. The inner diameter of the hole selected in this example is 5.5μm, in order to achieve chaotic light output with chaotic bandwidth broadening of three-mode interaction. Among them, two modes interact with each other to generate chaotic signals, and the third mode interacts with the first two modes to achieve the broadening of the chaotic bandwidth by using optical-optical resonance.

[0064] Figure 5 The detailed spectrum diagram of the steady state, periodic state and chaotic state experienced during the chaotic state generation process of the broadband microcavity chaotic laser according to the embodiment of the present disclosure is schematically shown.

[0065] like Figure 5As shown in the figure, at 5.6mA, the laser works in a steady state, and three peaks can be observed at wavelengths of 1539.384nm, 1539.560nm and 1539.876nm, which are recorded as mode "L", mode "M" and mode "R" respectively; when the current is 6.6mA, due to the interaction between mode L and mode M, the laser works in a periodic state, and it can be found in the spectrum that sidebands with an interval of 0.04nm are generated; when the current is 8.8mA, the laser enters a chaotic state, and the spectrum is broadened. At the same time, it can be seen that the intensity of mode R is weak at this time, and the chaos is mainly caused by the interaction between mode L and mode M.

[0066] Figure 6 The spectrum diagram of the steady state, periodic state and chaotic state experienced during the chaotic state generation process of the broadband microcavity chaotic laser according to the embodiment of the present disclosure is schematically shown.

[0067] like Figure 6 As shown in the figure, when the current is 5.6mA, the spectrum almost overlaps with the noise floor, indicating that the laser is working in a steady state; when the current is 6.6mA, an obvious resonance peak can be found in the spectrum, and its frequency is 5GHz, corresponding to Figure 5 The sidebands at 0.04nm intervals in the 6.6mA spectrum; when the laser current is 8.8mA, the spectrum is broadened and the laser enters a chaotic state. Since chaos is mainly generated by the interaction between mode L and mode M, the obtained chaos standard bandwidth is only 9.6GHz. Here, the chaos standard bandwidth is defined as the total energy from zero frequency to a certain frequency. If the energy contained in this spectrum accounts for 80% of the energy of the entire spectrum, then this frequency range is the chaos standard bandwidth.

[0068] Figure 7 The detailed spectrum diagram of the broadband microcavity chaotic laser according to the embodiment of the present disclosure when the injection current is 20 mA is schematically shown.

[0069] from Figure 7 It can be seen that the spectrum line generated by the microcavity chaotic laser is broadened, showing a chaotic spectrum. At the same time, the intensity of mode R at the long wavelength is higher than that of the broadened modes L and M on the left.

[0070] Figure 8 The chaotic spectrum diagram of the broadband microcavity chaotic laser under 20 mA current according to an embodiment of the present disclosure is schematically shown.

[0071] from Figure 8It can be seen that due to the beat frequency of mode R and the broadened modes L and M on the left, in addition to the broadened envelope at low frequencies, additional broadened peaks are observed at 22.8 GHz, 33.3 GHz and 39.5 GHz on the spectrum, which further expand the chaotic bandwidth. The experimentally calculated chaotic standard bandwidth is 33.5 GHz. Compared with the 9.6 GHz chaotic bandwidth generated by the interaction of only two modes at 8.8 mA, it can be seen that at 20 mA, due to the introduction of the beat frequency of the third mode, the intracavity optical resonance achieves a significant improvement in the chaotic bandwidth.

[0072] Fig. 9 The intensity distribution histogram obtained by directly detecting a chaotic optical signal according to an embodiment of the present disclosure is schematically shown.

[0073] from Fig. 9 It can be seen that the skewness calculated based on the intensity distribution of the data acquired under real-time acquisition at 100 Gas / s is 0.794830, which shows that there is a certain bias in the intensity distribution. Ideally, the skewness value of a completely symmetrical distribution is 0, and the closer the absolute value of the skewness is to 0, the better the symmetry.

[0074] Fig.10 The intensity distribution histogram of the chaotic optical signal of the broadband microcavity chaotic laser according to the embodiment of the present disclosure after being detected by optical fiber delay balance is schematically shown.

[0075] from Fig.10 It can be seen that the chaotic light generated by the microcavity chaotic laser is first divided into two paths through a 50%:50% fiber coupler, one of which is connected to a 1-meter-long delay fiber, and the other is not connected to a delay fiber. The two chaotic lights are simultaneously sent to a balanced detector for conversion, and then collected in real time at a sampling rate of 100 Gas / s. From the intensity distribution, it can be seen that the symmetry is greatly improved, and the calculated skewness is also reduced to -0.327556.

[0076] Fig.11 The diagram schematically shows the probability distribution of quantization values ​​after retaining the 5 least significant bits according to an embodiment of the present disclosure. Fig.12 The autocorrelation function after retaining the 5 least significant bits according to an embodiment of the present disclosure is schematically shown.

[0077] like Fig.11 As shown in the figure, the electrical signal converted by the balanced detector is collected in real time by a 100Gas / s8-bit oscilloscope. After the processing of retaining multiple least significant bits, the quantized values ​​have almost equal probability distribution after retaining 5 least significant bits. Fig.12 As shown, after retaining the 5 least significant bits, the obtained binary sequence has a rapidly decaying autocorrelation function, and the correlation coefficient of adjacent bits is less than 0.001.

[0078] Based on the random number sequence obtained from the high-speed random number generator provided above, the NIST SP800-22 random number sequence test was passed. The experiment collected continuous 1Gbit quantized binary bits, divided them into 1000 groups of 1Mbit data streams and sent them to the NISTSP 800-22 test set for detection. When the confidence level α is set to 0.01, when the P value of each test item is greater than 0.0001 and the test proportion value is greater than 0.980, it means that the generated random number passes the randomness test. The specific test results are shown in Figure 1.

[0079] Table 1

[0080]

[0081]

[0082] It can be seen from Table 1 that the random numbers generated by the high-speed random number generator provided by the embodiment of the present disclosure successfully pass the randomness test.

[0083] In summary, the high-speed random number generator provided by the embodiment of the present disclosure uses a semiconductor microcavity chaotic laser as the physical entropy source for random number generation. It can generate spontaneous chaos without external light injection, external light feedback or external photoelectric feedback. There is no external cavity feedback delay peak, and the chaotic optical signal has high quality, which is conducive to the improvement of the random number generation rate. And the chip-level chaotic entropy source has a simple structure, which greatly simplifies the random number system. Furthermore, by etching a hole of a specific radius in the center of the cavity and utilizing the optical-optical resonance effect, the chaotic bandwidth is greatly improved, and the random number generation rate is improved. Furthermore, balanced detection is achieved through delayed optical fiber and balanced detector, which improves the symmetry of the intensity distribution of the chaotic signal and can be used to realize real-time random number generation. In addition, the polygonal microcavity chaotic laser has a simple manufacturing process, does not require secondary epitaxy, does not require complex active-passive integration technology, does not require hybrid integration technology, and has low cost, which reduces the cost of random number devices.

[0084] It will be appreciated by those skilled in the art that the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations and / or combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways without departing from the spirit and teachings of the present disclosure. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0085] Although the present disclosure has been shown and described with reference to specific exemplary embodiments of the present disclosure, it should be understood by those skilled in the art that various changes in form and details may be made to the present disclosure without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above-mentioned embodiments, but should be determined not only by the appended claims, but also by the equivalents of the appended claims.

Claims

1. A high-speed random number generator, characterized in that: include: A microcavity chaotic laser (1) is used to generate a chaotic optical signal with a large spectrum bandwidth by using inter-mode interaction under the condition of no external light injection, external light feedback or external photoelectric feedback, wherein the microcavity chaotic laser (1) is an on-chip semiconductor spontaneous microcavity chaotic laser; An optical fiber coupler (2), used for splitting the chaotic optical signal into a first optical signal and a second optical signal; A delay optical fiber (3), used for delaying the first optical signal to obtain a third optical signal; A balanced detector (4) for performing balanced detection on the second optical signal and the third optical signal having a time difference; A random number extraction module (5) is used to perform quantization processing on the balanced detection electrical signal to generate a random number sequence; The microcavity chaotic laser (1) comprises: A semiconductor microcavity (11) having a cross section of a regular polygon or a cross section of an arc-edged regular polygon, and used to form total internal reflection of light, wherein the semiconductor microcavity (11) is an active cavity; A hole (12) is provided inside the semiconductor microcavity (11) and is used to control the number of modes and the mode interval, wherein the hole (12) is a hole (12) with a specific radius and is used to suppress high-order transverse modes and control the number of modes, so as to utilize the intracavity optical resonance effect to generate a chaotic optical signal with a large spectrum bandwidth; An annular electrode window (13), located at the upper end of the semiconductor microcavity (11), coaxial with the hole (12), and used for non-uniform current injection to achieve nonlinear interaction of modes to generate the chaotic optical signal; The waveguide (14) is in contact with and connected to the outer wall of the semiconductor microcavity (11) and is used for directional output of the chaotic optical signal.

2. The high-speed random number generator according to claim 1, characterized in that: The active region material structure of the semiconductor microcavity (11) is a quantum well or quantum dot structure.

3. The high-speed random number generator according to claim 1, characterized in that: When the cross section of the semiconductor microcavity (11) is an arc-edged regular polygon, the size of the arc-edged regular polygon satisfies the following relationship: Among them, a is the side length of the regular polygon inscribed in the arc-edge regular polygon, r is the radius of the arc edge, and δ is the deformation of the arc edge.

4. The high-speed random number generator according to claim 1, characterized in that: The semiconductor microcavity (11) is a square, hexagon, octagon, arc-edge quadrilateral, arc-edge hexagon or arc-edge octagon structure.

5. The high-speed random number generator according to claim 1, characterized in that: The light outlet of the waveguide (14) is a cleavage surface or an end surface coating structure.

6. The high-speed random number generator according to claim 1, characterized in that: The cross-section of the hole (12) includes a triangle, a quadrilateral, a pentagon, a hexagon, an ellipse, or a circle.

7. The high-speed random number generator according to claim 1, characterized in that: The balanced detector (4) performs balanced detection on the second optical signal and the third optical signal having a time difference, comprising: The balanced detector (4) is used for detecting the second optical signal to obtain a first electrical signal, detecting the third optical signal to obtain a second electrical signal, and performing a difference operation on the first electrical signal and the second electrical signal to obtain an electrical signal difference.

8. The high-speed random number generator according to claim 1, characterized in that: The random number extraction module (5) is a single-bit comparator or a multi-bit analog-to-digital converter.

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