Non-contact processing device and processing method

Abstract

The present invention relates to a non-contact processing device and a processing method for performing a processing procedure on a solid structure. The non-contact processing device of the present invention provides energy to the solid structure with an electromagnetic radiation source, so as to cause the solid structure to generate a modification or a defect, i.e. to form a modified layer. The present invention further non-contact applies a separation energy to the solid structure with the modified layer with a separate energy source, so as to quickly separate or thin the solid structure from the modified layer due to the stress, structural strength, lattice pattern or hardness of the modified layer being different from other non-processing areas.

Description

Technical Field

[0001] This invention relates to a processing apparatus and a processing method, and more particularly to a non-contact processing apparatus and a processing method. Background Technology

[0002] In recent years, the rapid development of semiconductor technology has enabled significant advancements in technological products. In semiconductor manufacturing processes, processing elements are frequently used to cut, grind, or polish materials such as wafers. Semiconductor materials, such as silicon carbide (SiC), possess advantages such as a wide bandgap, high hardness, high thermal conductivity, and chemical inertness, making them ideal materials for fabricating high-temperature electronic components and high-frequency, high-power devices. However, the high hardness of semiconductor materials makes them difficult to slice, grind, or polish, and can also cause wear on processing tools. Therefore, improving the processing efficiency and quality of semiconductor materials is currently one of the most important research and development topics. Summary of the Invention

[0003] In view of this, one or more objectives of the present invention are to provide a non-contact processing apparatus and processing method to solve the problems of the prior art.

[0004] To achieve one or more of the aforementioned objectives, the present invention provides a non-contact processing apparatus for performing a processing procedure on at least one solid structure, comprising at least: a modifying energy source for providing modifying energy to a processing target area of ​​the solid structure in a modifying step of the processing procedure, causing a qualitative change or defect in the processing target area of ​​the solid structure, thereby forming a modified layer, wherein the modifying energy source is a laser source and the modifying energy is laser energy; and a separation energy source for non-contactly applying separation energy to the solid structure having the modified layer in a separation step of the processing procedure, thereby separating or thinning the solid structure from the modified layer, so that the solid structure becomes a separated or thinned solid structure.

[0005] The separated energy source includes a microwave or radio frequency source to provide microwave or radio frequency energy as the separated energy.

[0006] The separation energy source includes a discharge processing (EDM) unit for providing discharge energy as the separation energy via at least one discharge electrode.

[0007] The separated energy source includes a microwave or radio frequency source and a discharge processing (EDM) unit, which are used to provide microwave or radio frequency energy and discharge energy as the separated energy, respectively.

[0008] It also includes an electric field source that provides an electric field to assist the separation energy source in separating or thinning the solid structure from the modified layer, so that the solid structure becomes the separated or thinned solid structure.

[0009] It also includes a polishing unit for polishing the separated or thinned solid structure in one of the polishing steps of the processing procedure.

[0010] The polishing unit comprises a laser source, an electrical discharge machining (EDM) unit, a microwave or radio frequency source, and / or another microwave or radio frequency source, to provide laser energy, electrical discharge energy, microwave or radio frequency energy, and / or another microwave or radio frequency energy to polish the separated or thinned solid structure, wherein the separation energy source includes the electrical discharge machining (EDM) unit and / or the microwave or radio frequency source.

[0011] The other microwave or radio frequency source provides the other microwave or radio frequency energy via at least one discharge electrode of the electrical discharge processing (EDM) unit.

[0012] It also includes a heat source for heating the solid structure in the modification step, the separation step and / or a heating step of the processing procedure.

[0013] The heat source is a laser source, a microwave or radio frequency source, a hot oil tank, another laser source, another microwave or radio frequency source and / or an infrared light source, and the separate energy source includes a discharge processing (EDM) unit and / or the microwave or radio frequency source.

[0014] The solid structure is in contact with a thermally expanding material that has penetrated into the modified layer, and the heat source causes the thermally expanding material to expand in volume, thereby separating or thinning the solid structure from the modified layer during the separation step of the processing procedure.

[0015] The processing target area of ​​the separated or thinned solid structure is provided with a filling material to fill the surface cracks on the processing target area of ​​the separated or thinned solid structure.

[0016] It also includes an external disturbance source that drives a filling material to fill the surface cracks of the separated or thinned solid structure.

[0017] The filling material is formed on the processing target area of ​​the separated or thinned solid structure by means of a heat source, thereby filling the surface cracks on the processing target area of ​​the separated or thinned solid structure.

[0018] The solid structure is immersed in a heated liquid.

[0019] The direction in which the separating energy source applies the separating energy to the solid structure is different from the direction in which the laser source provides the laser energy to the solid structure.

[0020] The direction in which the separating energy source applies the separating energy to the solid structure is the same as the direction in which the laser source provides the laser energy to the solid structure.

[0021] The non-contact processing device performs the processing procedure on the target area of ​​the solid structure in a fluid.

[0022] The non-contact processing device performs the processing procedure on the target area of ​​the solid structure in a vacuum environment.

[0023] The number of discharge electrodes in the electrical discharge machining (EDM) unit is one or more.

[0024] The number of such solid structures is one or multiple.

[0025] To achieve one or more of the aforementioned objectives, the present invention further proposes a non-contact processing method for processing at least one solid structure, comprising the following steps: performing a modification step in the processing procedure, wherein the modification step provides modification energy to a processing target area of ​​the solid structure using a modification energy source, causing a qualitative change or defect in the processing target area of ​​the solid structure, thereby forming a modified layer, wherein the modification energy source is a laser source and the modification energy is laser energy; and performing a separation step in the processing procedure, wherein the separation step applies separation energy non-contactly to the solid structure having the modified layer using a separation energy source, thereby separating or thinning the solid structure from the modified layer, so that the solid structure becomes a separated or thinned solid structure.

[0026] The separation energy source includes a microwave or radio frequency source that provides microwave or radio frequency energy and / or a discharge processing (EDM) unit that provides discharge energy, for applying the separation energy to the solid structure having the modified layer.

[0027] The first region of the modified layer has a separation starting point, and the separation step is to separate or thin the solid structure from the separation starting point of the modified layer using the separation energy.

[0028] The separation step further includes applying an electric field to the solid structure to assist the separation energy source in separating from or thinning the solid structure from the modified layer.

[0029] The separation step further includes allowing a thermally expanding material to penetrate into the modified layer of the solid structure and expanding the volume of the thermally expanding material by providing thermal energy, thereby assisting the separation energy source in separating from or thinning the solid structure from the modified layer.

[0030] The process includes a polishing step following the separation step, whereby a polishing unit is used to polish the separated or thinned solid structure.

[0031] The process includes, during or after the modification step, the separation step, and / or the polishing step, a heating step as part of the processing procedure, to heat the solid structure.

[0032] It also includes a filling step to fill surface cracks on the processing target area of ​​the separated or thinned solid structure.

[0033] The filling step involves forming a filling material in the separated or thinned solid structure to fill surface cracks in the processing target area of ​​the separated or thinned solid structure.

[0034] The filling step involves using an external force disturbance source to drive a filling material to fill the surface cracks on the processing target area of ​​the separated or thinned solid structure.

[0035] The processing procedure also includes a follow-up step on the separated or thinned solid structure, which is selected from the group consisting of coating, vapor deposition, photolithography, lithography, etching and diffusion steps.

[0036] The processing target area is located on a portion of the solid structure.

[0037] As described above, the non-contact processing apparatus and processing method of the present invention may have one or more of the following advantages:

[0038] (1) In the modification step, this invention utilizes an electromagnetic radiation source to induce qualitative changes or defects in the processing target area of ​​the solid structure, thereby creating differences in stress, structural strength, lattice type, or hardness between it and other areas. In the separation step, this invention can rapidly separate or thin the solid structure by utilizing these differences in stress, structural strength, lattice type, or hardness.

[0039] (2) In the separation step, the present invention applies a separation energy to the solid structure that has undergone the modification phenomenon, thereby taking advantage of the differences in stress, structural strength, lattice type or hardness between the modified layer and other regions, and the different reactions to the separation energy source, to separate or thin the solid structure from the modified layer.

[0040] (3) The present invention heats the solid structure with a heat source, which can increase the temperature of the solid structure, thereby increasing the absorption rate of radiation source energy.

[0041] (4) The present invention can detect the formation state of the modified layer of a solid structure, and then control the laser energy provided by the laser source and / or control the microwave or radio frequency energy provided by the microwave or radio frequency source, such as controlling the magnitude, frequency or processing feed rate of the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0042] (5) The present invention can accelerate the separation speed of solid structures and fill the surface cracks on the processing target area to prevent the expansion of excess surface cracks.

[0043] (6) The present invention can be processed in a heated liquid tank, which can reduce the unnecessary cracks or crack propagation caused by thermal shock and prevent unnecessary surface crack expansion.

[0044] To enable you to have a better understanding of the technical features and effects of this invention, preferred embodiments and detailed descriptions are provided below. Attached Figure Description

[0045] Figure 1 This is a schematic diagram of the processing procedure of the non-contact processing method of the present invention.

[0046] Figure 2a This is a schematic diagram illustrating the modification steps of the non-contact processing device of the present invention. Figure 2b This is a schematic diagram of the separation steps of the non-contact processing device of the present invention.

[0047] Figure 3 This is a schematic diagram of the modification and separation steps of the non-contact processing device of the present invention, wherein the modification energy and separation energy are supplied to the solid structure from the same side.

[0048] Figure 4 This is a schematic diagram of the modification and separation steps of the non-contact processing device of the present invention, wherein the modification energy and separation energy are supplied to the solid structure from opposite sides.

[0049] Figure 5 This is a schematic diagram of the modification and separation steps of the non-contact processing device of the present invention, wherein the modification energy and separation energy are supplied to the solid structure from the vertical side.

[0050] Figure 6 For the reason Figure 5 A schematic diagram obtained from another perspective.

[0051] Figure 7a and Figure 7bThis is a simplified schematic diagram of the modification and separation steps of the non-contact processing apparatus of the present invention, wherein... Figure 7a The diagram illustrates two separate energy sources supplied to a solid structure from the same side. Figure 7b The diagram illustrates two separate energy sources supplied to the solid structure from the vertical side.

[0052] Figure 7c This is a schematic diagram of the non-contact processing device of the present invention, which uses an electric field source or an expanding liquid to assist in the separation or thinning of solid structures.

[0053] Figure 8 This is a schematic diagram of the separation and heating steps of the non-contact processing device of the present invention.

[0054] Figure 9a This is a schematic diagram of the grinding and polishing steps performed in a heated liquid tank using the non-contact processing device of the present invention. Figure 9b This is a schematic diagram of the non-contact processing device of the present invention, which performs the grinding and polishing steps in a heated liquid tank.

[0055] Figure 10a and Figure 10b This is a schematic diagram illustrating the filling step of the non-contact processing device of the present invention.

[0056] Figure 11 This is a schematic diagram of the non-contact processing device of the present invention using two sets of dual microwave or radio frequency sources.

[0057] Figure 12a and Figure 12b The images show a top view and a cross-sectional side view of the solid structure of the present invention, where a single processing target area is located in a portion of the region. Figure 12c and Figure 12d The images are a top view and a cross-sectional side view of the solid structure of the present invention, showing that multiple processing target areas are located in a portion of the area.

[0058] Figure 13a This is a schematic diagram illustrating how the present invention separates multiple solid structures using a discharge processing (EDM) unit with a single discharge electrode. Figure 13b This is a schematic diagram illustrating how the present invention separates a single solid structure using a discharge processing (EDM) unit with multiple discharge electrodes. Figure 13c This is a schematic diagram illustrating how the present invention separates multiple solid structures using a discharge processing (EDM) unit with multiple discharge electrodes, wherein... Figure 13a The perspective is the same as Figure 8 And using crystal ingots as the workpiece to be processed, Figure 13a The perspective is perpendicular to Figure 13b and Figure 13c .

[0059] Explanation of reference numerals in the attached figures:

[0060] S10: Modification Steps

[0061] S20: Separation Step

[0062] S30: Polishing Steps

[0063] S40: Detection and Control Procedures

[0064] S50: Heating Step

[0065] S60: Next Steps

[0066] S70: Filling Step

[0067] 20: Laser source

[0068] 22: Laser Generator

[0069] 23: Pulsed light

[0070] 24: Lens Group

[0071] 30: Microwave or radio frequency source

[0072] 32: Microwave generator

[0073] 33: Microwave

[0074] 34: Coaxial resonant cavity

[0075] 35: Opening

[0076] 36: Isolator

[0077] 38: Matcher

[0078] 38a: Coaxial tube

[0079] 38b: Metal plate

[0080] 38c: Metal rod

[0081] 40: Separate energy sources

[0082] 42: Absorption element

[0083] 46: Electric field source

[0084] 48: Thermally expanding substances

[0085] 50: Electrical Discharge Machining (EDM) Unit

[0086] 52: Discharge electrode

[0087] 60: Grinding and Polishing Unit

[0088] 70: Heat source

[0089] 80: Heated liquid tank

[0090] 82: Heating liquid

[0091] 85: Another microwave or radio frequency source

[0092] 90: Detection and Control Unit

[0093] 92: Temperature sensor

[0094] 95: External disturbance source

[0095] 100: Solid structure

[0096] 110: Processing target area

[0097] 112: Surface cracks

[0098] 114: Filling material

[0099] 120: Modified layer

[0100] 122: Area 1

[0101] 124: Separation Point

[0102] 100a: First half structure

[0103] 100b: Second Half Structure

[0104] 140: Filling material

[0105] 150: Platform

[0106] X: Depth

[0107] L1: Horizontal double arrow

[0108] L2: Vertical double arrow

[0109] C1: Horizontal double arrow

[0110] C2: Vertical double arrow

[0111] I-I', II-II': Section lines Detailed Implementation

[0112] To facilitate understanding of the technical features, content, advantages, and effects of this invention, the invention is described in detail below with reference to accompanying drawings and embodiments. The drawings used are for illustrative purposes only and do not necessarily represent the actual scale and precise configuration of the invention in practice. Therefore, the scale and configuration of the accompanying drawings should not be used to interpret or limit the scope of the invention in actual implementation. Furthermore, for ease of understanding, the same elements in the following embodiments are indicated by the same symbols.

[0113] Furthermore, unless otherwise specified, the terms used throughout this specification and claims generally have their ordinary meaning in the context of this art, the disclosure herein, and the specific content. Certain terms used to describe the invention will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the invention.

[0114] The use of terms such as "first," "second," and "third" in this document does not specifically refer to any order or sequence, nor is it intended to limit the invention. Rather, it is merely used to distinguish components or operations described using the same technical terms.

[0115] Secondly, when this article uses terms such as "contains", "includes", "has", or "contains", these are all open-ended terms, meaning that they include but are not limited to.

[0116] This invention provides a non-contact processing apparatus and method for processing a solid structure (i.e., a workpiece) and is applicable to many semiconductor processes, such as, but not limited to, SOI (Semiconductor on Insulator) processes, slicing processes, wafer thinning processes, or packaging processes. The solid structure described above refers to, but is not limited to, solid objects containing semiconductor materials in the aforementioned semiconductor processes, such as crystal structures like wafers or ingots. The semiconductor material described above refers to, but is not limited to, substrate materials such as Si, SiC, SiGe, Ge, GaAs, GaN, or InP, and the crystal structure refers to, but is not limited to, single-crystal, polycrystalline, or amorphous structures. The processing procedure performed by the non-contact processing method of this invention includes at least a modification step and a separation step. The modification step involves applying modification energy to the processing target area of ​​the solid structure using a modification energy source, causing a qualitative change or defect in the processing target area of ​​the solid structure, thereby forming a modified layer. The modification energy source is a laser source, and the modification energy is laser energy. The separation step involves applying separation energy non-contactly to the solid structure with the modified layer using a separation energy source, thereby separating or thinning the solid structure from the modification layer, resulting in a separated or thinned solid structure.

[0117] The aforementioned "separation or thinning" of a solid structure refers to, for example, removing, separating, cutting, splitting, or slicing a portion of material or a sheet-like structure from the solid structure to be processed, wherein this portion of material or sheet-like structure can be selectively recycled or reused. In other words, the aforementioned separated or thinned solid structure may be a single processed structure (i.e., the first half structure described later) or two processed structures (i.e., the first half structure and the second half structure described later). The aforementioned processing target area may be located at any depth or surface of the solid structure (not limited to the front or back surface). Therefore, the thickness of the separated or thinned solid structure of the present invention (i.e., the thickness of the first half structure / second half structure) can be adjusted and varied according to the process requirements of the actual application, and the present invention is not limited to a specific thickness.

[0118] like Figure 1 As shown, in the modification step S10 of the processing procedure of the present invention, the non-contact processing device of the present invention provides modification energy to one of the processing target areas of the above-mentioned solid structure using a modification energy source, thereby causing a qualitative change or defect in the processing target area of ​​the solid structure, that is, forming a modified layer. In the separation step S20 of the processing procedure of the present invention, the present invention applies separation energy non-contactly to the solid structure with the modified layer using a separation energy source, thereby separating or thinning the solid structure from the modified layer, making it the separated or thinned solid structure described above.

[0119] Following the separation step S20, the present invention may selectively perform a polishing step S30 to polish the separated or thinned solid structure (e.g., the first half-structure 100a and / or the second half-structure 100b) using a polishing unit. Furthermore, during the modification step S10, the present invention may selectively perform a detection and control step S40 simultaneously to detect and provide feedback control on the formation state of the modified layer 120. Moreover, during or after the modification step S10, separation step S20, and / or polishing step S30, the present invention may selectively perform a heating step S50 to heat the solid structure using a heat source, thereby reducing its material brittleness and the roughness of its cut or thinned surface. After performing the separation step S20 or polishing step S30 described above, the present invention may further include performing one or more subsequent steps S60, which are selected, for example, from the group consisting of coating steps, vapor deposition steps, photolithography steps, lithography steps, etching steps and diffusion steps.

[0120] Please see Figure 1 and Figure 2aIn the non-contact processing apparatus and method of the present invention, the modification step S10 involves non-contactly providing modification energy to the processing target area 110 of the aforementioned solid structure 100 using a modification energy source (e.g., an electromagnetic radiation source), thereby causing a qualitative change or defect in the solid structure 100 and forming a modified layer 120. Figure 2a As shown. Taking the solid structure 100 as an example of a wafer, the wafer is defined with the aforementioned processing target area 110 located in a radial section or axial section of the wafer, and this radial or axial section may, for example, be located in any depth X or on the surface of the wafer. The solid structure 100 is, for example, supported on a stage 150, but is not limited to a movable stage. Furthermore, the processing of the solid structure 100 can be performed in a heated liquid tank 80 (such as...). Figure 8 The procedure can be performed in chambers such as those shown in the diagram, or it can be performed outside of a heated liquid tank (e.g., as shown in the diagram). Figures 3 to 5 The procedure is carried out in chambers such as (as shown).

[0121] The first electromagnetic radiation source described above provides a first type of electromagnetic energy to the processing target area 110 of the solid structure 100, thereby causing a qualitative change or defect in the solid structure 100 of the processing target area 110, such as weakening of atomic bonds, structural weakening, or transformation from a single crystal state to a polycrystalline or amorphous state, that is, forming a modified layer 120. The thickness of the solid structure 100 is, for example, but not limited to, about 50 μm to about 1,800 μm. The processing target area 110 is, for example, located in or on the surface of the solid structure 100 at a depth X. The area and thickness of the modified layer 120 formed by the present invention in the solid structure 100 are not particularly limited, and can be determined according to actual process requirements.

[0122] The electromagnetic radiation source used in this invention is, for example, a laser source 20, which generates pulsed light with laser energy (modification energy) in the modification step S10 of the above-mentioned processing procedure to irradiate the processing target area 110 of the solid structure 100. Taking the thickness of the solid structure 100 as approximately 1,800 μm as an example, the depth X of the processing target area 110 can range from approximately 0 μm to approximately 1,800 μm. Similarly, the distance between the focal point of the pulsed light and the stage 150 can range from approximately 1,800 μm to approximately 0 μm depending on the actual process. The laser source 20 generates a pulsed light 23 by means of a laser generator 22, and this pulsed light 23 is transmitted to the solid structure 100 via a lens group 24. Because the pulsed light 23 from the laser source 20 creates a nonlinear absorption effect and a thermal effect at the focal point, forming a hot spot, the solid structure 100 at the focal point will be ionized, generating free electrons. The energy of these free electrons will also be transferred to the solid structure 100 at the focal point, increasing its temperature and thus increasing the absorption coefficient. This allows the laser source 20 to absorb more laser energy, thereby enhancing the modification effect. Therefore, when the focal point of the pulsed light 23 generated by the laser source 20 is focused on the processing target area 110 of the solid structure 100, laser energy is provided to this area, causing changes such as weakening of atomic bonds, structural weakening, transformation from a single crystal to a polycrystalline or amorphous state, or reduction in hardness. This results in the formation of the modified layer 120.

[0123] The laser source 20 used in this invention is, for example, but not limited to, an Nd:YAG pulsed laser, an Nd:YVO4 pulsed laser, or a Ti-Sapphire pulsed laser. The pulsed light generated by the laser source 20 scans and irradiates the processing target area 110 of the solid structure 100, thereby achieving a defect density range of approximately 100 ea / mm². 2 To approximately 1,000,000 ea / mm 2 The pulsed light has a movement speed ranging from about 10 mm / sec to about 1,000 mm / sec, a pulsed light wavelength greater than about 700 nm, preferably ranging from about 700 nm to about 1,600 nm, a pulse width less than about 1,000 ns, a repetition frequency ranging from about 5 kHz to about 10 MHz, a pulse energy (E) ranging from, for example, about 0.1 μJ to about 1,000 μJ, and a spot diameter ranging from, for example, about 1 μm to about 50 μm.

[0124] This invention can utilize a movable platform and a horizontally movable solid structure 100 (such as...) Figure 2a(As shown by the horizontal double arrow C1 below) or laser source 20 horizontal moving pulse light (such as...) Figure 2a (As indicated by the horizontal double arrow L1 above), this allows the pulsed light to horizontally scan and irradiate the processing target area 110 of the solid structure 100. Furthermore, the present invention can also utilize, for example, a movable stage to vertically move the solid structure 100 (i.e., the laser source is longitudinally fixed, while the stage is longitudinally movable, such as...). Figure 2a (As shown by the vertical double arrow C2 below) or a vertically moving pulsed light source 20 (i.e., the laser source 20 is vertically movable, while the stage is vertically fixed, such as...). Figure 2a (As shown by the vertical double arrow L2 above), this allows the pulsed light to vertically scan and irradiate the processing target area 110 of the solid structure 100. Furthermore, in other embodiments, the movement of the aforementioned movable stage is not limited to vertical or horizontal movement of the solid structure 100. The movable stage can also move the solid structure 100 by rotation, tilting, or other means, that is, as long as the position of the pulsed light's focal point irradiating the solid structure 100 can be adjusted, it can be applied to this invention. Additionally, by adjusting the position of the pulsed light's focal point irradiating the solid structure 100, the processing target area 110 of the solid structure can be made not limited to being distributed throughout the entire area of ​​the solid structure, but for example, distributed only in a portion of the radial and / or longitudinal sections. For example, a processing target area 110 (see...) Figure 12a and Figure 12b ) or multiple processing target areas 110 (see Figure 12c and Figure 12d The area to be processed can be a portion of the solid structure 100, and the cross-sectional shape of the target area 110 is not particularly limited and can be determined according to actual needs. For example, it can be like... Figures 12a to 12d The land shown is U-shaped, in which Figure 12b for Figure 12a The side view of the section obtained along section line I-I', and Figure 12d for Figure 12c The side view of the section obtained along section line II-II'.

[0125] Please see Figure 1 , Figure 2b , Figures 3 to 5The non-contact processing apparatus and method of the present invention further include a separation step S20 in the processing procedure. In the separation step S20, a separation energy is applied non-contactly to the solid structure 100 having the modified layer 120 using a separation energy source 40, thereby separating or thinning the solid structure 100 from the modified layer 120, resulting in a separated or thinned solid structure, such as a first half-structure 100a with a thinned surface, or a first half-structure 100a and a second half-structure 100b respectively having segmented surfaces. Furthermore, the separated or thinned solid structure (i.e., the first half-structure 100a and / or the second half-structure 100b) may also retain a portion of the modified layer 120 (see...). Figure 7c , Figure 10a or Figure 10b ).

[0126] The separation energy source 40 used in this invention includes, for example, a microwave or radio frequency source 30. This microwave or radio frequency source 30 outputs microwave or radio frequency electromagnetic waves to provide microwave or radio frequency energy as the separation energy mentioned above. By utilizing the differences in stress, structural strength, lattice type, or hardness between the modified layer 120 (i.e., the processing target area 110) and other areas (i.e., the non-processing target area), and their different responses to microwave or radio frequency energy, the solid structure 100 is separated or thinned from the modified layer 120, so that the solid structure 100 becomes the separated or thinned solid structure mentioned above (e.g., the first half structure 100a, or the first half structure 100a and the second half structure 100b). The stress (e.g., compressive or tensile stress) of the modified layer 120 in the processing target region 110 of the solid structure 100 of this invention differs from that in other regions (non-processing target regions), or the structural strength of the modified layer 120 is weaker than that in other regions (non-processing target regions), or the crystal lattice type (e.g., single crystal, polycrystalline, or amorphous) of the modified layer 120 differs from that in other regions (non-processing target regions), or the hardness of the modified layer 120 is weaker than that in other regions (non-processing target regions). This invention, by utilizing the difference in microwave energy absorption between the modified layer 120 and the non-processing target region, can increase the difference between the modified layer 120 and the non-processing target region, easily expanding the separation degree from the modified layer 120. Furthermore, the conductivity of the modified layer 120 is superior to that of other regions (non-processing target regions), therefore the separation energy source 40 can also be a discharge machining (EDM) unit (e.g., Figure 8 (As shown). Furthermore, this invention utilizes the difference in discharge energy response between the modified layer 120 and other regions to separate or thin the solid structure from the modified layer.

[0127] The microwave or radio frequency source 30 generates microwaves 33 via a microwave generator 32 (such as a magnetron) and transmits them to the solid structure 100 via a coaxial resonator 34. Preferably, an isolator 36 is provided between the microwave generator 32 and the coaxial resonator 34 to provide unidirectional microwave transmission. A matching device 38 is also preferably provided along the microwave transmission path (towards the coaxial resonator 34) to reduce microwave reflection, allowing the microwaves to effectively enter the coaxial resonator 34 and be transmitted to the solid structure 100. The matching device 38 is, for example, composed of a coaxial tube 38a, a metal plate 38b, and a metal rod 38c. However, the above-described structure of the microwave or radio frequency source 30 is merely a preferred example and is not intended to limit the invention. Compared to ultraviolet or infrared light, the microwave or radio frequency electromagnetic waves provided by the microwave or radio frequency source 30 can penetrate the solid structure 100, such as a wafer / ingot, thus effectively transmitting the separated energy to the depth of the modified layer 120. Because the modified layer 120 of the processing target area 110 of the solid structure 100 undergoes modification phenomena such as qualitative changes or defects, it will absorb microwave or radio frequency energy provided by the microwave or radio frequency source 30 differently. The microwave or radio frequency energy can cause the bonds between atoms (e.g., silicon atoms) of the solid structure 100 to vibrate and heat up. Therefore, the solid structure 100 can be separated from or thinned at the modified layer 120 by utilizing the stress difference, structural strength, lattice type, and / or hardness difference between the modified layer 120 and other non-processing target areas. Furthermore, the present invention is not limited to applying separation energy to the modified layer 120 of the solid structure 100 only after the entire processing target area 110 of the solid structure 100 has been covered with the modified layer 120. That is, regardless of whether the processing target area 110 of the solid structure 100 is partially or entirely covered with the modified layer 120, the present invention can apply separation energy to the modified layer 120 of the solid structure 100. In other words, the modification step S10 and the separation step S20 of the processing procedure of the present invention can be performed sequentially. For example, after the modification step S10 is used to form a modified layer 120 on the entire target area 110 to be processed, the separation step S20 is then performed. The modification step S10 and the separation step S20 can also be performed simultaneously. For example, after the modification step S10 is used to form a modified layer 120 on a portion of the target area 110 to be processed, the separation step S20 can be performed to partially or completely separate or thin the solid structure 100.

[0128] If the modification step S10 and the separation step S20 are performed sequentially, the present invention can first perform the modification step S10, using the laser energy provided by the laser source 20 to form a modified layer 120 in the processing target area 110 of the solid structure 100, and then perform the separation step S20, that is, using the microwave or radio frequency source 30 to provide microwave or radio frequency energy as separation energy, so as to separate or thin the solid structure 100 from the modified layer 120, so that the solid structure 100 becomes the separated or thinned solid structure mentioned above.

[0129] If the modification step S10 and the separation step S20 are performed simultaneously, the present invention can, for example, form a modified layer 120 and simultaneously separate or thin the solid structure 100 from the modified layer 120. The laser energy provided by the laser source 20 can generate free electrons in the processing target area 110 of the solid structure 100. The generation of these free electrons allows for the absorption of more microwave energy compared to other areas (non-processing target areas), thus increasing the temperature of the processing target area. This increased temperature further helps the processing target area 110 absorb more laser energy to generate more free electrons, thereby absorbing more electromagnetic energy from microwave or radio frequency radiation sources, thus forming a positive cycle. Because the processing target area 110 of the solid structure 100 (i.e., the location of the modified layer 120) has more free electrons at the focal point of the pulsed light from the laser source 20, and has a higher temperature and absorption coefficient, it can absorb more microwave energy compared to other areas (non-processing target areas). This results in a greater thermal difference with other non-processing target areas, thereby creating greater differences in stress, structural strength, lattice type, or hardness, which helps to achieve the separation or thinning of the solid structure 100. The aforementioned temperature can be detected, for example, by a temperature sensor 92 (such as an infrared temperature sensor). Furthermore, the laser source 20 of this invention provides laser energy by generating pulsed light, while the microwave or radio frequency source 30 provides microwave or radio frequency energy by continuously or intermittently generating microwave or radio frequency electromagnetic waves. In this way, the laser source 20 and the microwave or radio frequency source 30 of the present invention can sequentially or simultaneously output pulsed light and microwave or radio frequency electromagnetic waves to provide laser energy and microwave or radio frequency energy, so that the processing target area 110 of the solid structure 100 forms a modified layer 120, and the solid structure 100 is separated or thinned from the modified layer 120.

[0130] Furthermore, the direction in which the microwave or radio frequency source 30 of the present invention outputs microwave or radio frequency electromagnetic waves to provide microwave or radio frequency energy to the solid structure 100 is not particularly limited, and it can be from directions different from (e.g.) Figure 4 (as shown on the opposite side) the same as (as shown on the opposite side) Figure 3 (as shown on the same side) or perpendicular to ... Figure 5 , Figure 6(As shown) Laser source 20 provides laser energy to solid structure 100 in a direction that provides microwave or radio frequency electromagnetic waves. In this invention, a set of dual microwave or radio frequency sources can also be used to provide microwave or radio frequency energy, such as... Figure 5 and Figure 6 As shown, in this set of dual microwave or radio frequency sources, the two microwave or radio frequency sources 30 share the same coaxial resonant cavity 34, which is respectively located on the left and right sides of the solid structure 100, providing microwave or radio frequency energy perpendicular to the direction in which the laser source 20 provides laser energy. Figure 5 and Figure 6 The coaxial resonant cavity 34 shown selectively has an opening 35, allowing the stage 150 to use this opening 35 to deliver the area to be processed on the solid structure 100 into the coaxial resonant cavity 34. Additionally, as... Figure 11 As shown, an additional set of dual microwave or radio frequency sources can be added to enhance the processing (e.g., separation) effect. Furthermore, in addition to the aforementioned opposite side direction, same side direction, and perpendicular direction, the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy and the direction in which the laser source provides laser energy can also form an angle, with this angle ranging from approximately 0 degrees to approximately 180 degrees. Additionally, the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy can be adjusted, for example, by adjusting the direction in which the microwave or radio frequency source 30 provides microwave or radio frequency energy and the direction in which the laser source 20 provides laser energy, and / or the aforementioned angle, based on the surface morphology or composition of the solid structure 100.

[0131] For example, the pulsed light provided by the laser source 20 can scan along the radial or axial cross-section of a crystal structure such as a wafer or ingot to provide modification energy to the solid structure 100. The distribution direction of the quality changes or defects in the solid structure 100 is parallel to the direction of the radial or axial cross-section. The scanning path of the pulsed light along the radial or axial cross-section is not particularly limited, as long as it can provide laser energy to the processing target area 110 of the solid structure 100, it is applicable to this invention. Since microwaves or radio frequency electromagnetic waves can penetrate the solid structure 100 such as a wafer / ingot, the microwave or radio frequency source 30 can provide microwaves or radio frequency electromagnetic waves from directions parallel to the radial or axial cross-section, perpendicular to the radial or axial cross-section, or other directions. Only the solid structure 100 that has undergone quality changes or defects (i.e., the modification layer 120) will absorb more microwave or radio frequency energy. Regardless of the direction from which the microwave or radio frequency source 30 provides microwaves or radio frequency electromagnetic waves, an absorption element 42 can be provided on the opposite side to avoid unnecessary scattering and improve the uniformity of absorption (e.g., ...). Figure 4(As shown). Taking microwave or radio frequency source 30 as an example, the wavelength range of the microwave of the present invention is from about 1 mm to about 1 m, the frequency range is from about 300 GHz to about 0.3 GHz, and the power range is, for example, from about 200 watts to about 5,000 watts. The laser energy output by the laser source 20 of the present invention is not limited to being higher than, lower than or equal to the microwave or radio frequency energy output by the microwave or radio frequency source 30. Since the arrangement and operating principle of the laser source 20 and the microwave or radio frequency source 30 are well known to those skilled in the art, they will not be described in detail here.

[0132] In addition, such as Figure 7a and Figure 8 As shown, the separation energy source 40 of the present invention can also be, for example, replaced by a discharge processing (EDM) unit 50 instead of the microwave or radio frequency source 30, to provide discharge energy as the separation energy via the discharge electrode 52 in a non-contact manner. Alternatively, as... Figure 7b and Figure 8 As shown, the present invention can also simultaneously use the electrical discharge machining (EDM) unit 50 and the microwave or radio frequency source 30 as the separation energy source 40, wherein the direction in which the electrical discharge machining (EDM) unit 50 and the microwave or radio frequency source 30 provide separation energy can, for example, be the same (e.g., Figure 7a As shown), perpendicular to each other (as shown) Figure 7b (As shown) or at an angle, this angle being between approximately 0 degrees and approximately 180 degrees. The discharge electrode 52 of the electrical discharge machining (EDM) unit 50 is, for example, a wire electrode or a plate electrode. The materials for both the wire and plate electrodes can be, for example, molybdenum, brass, tungsten, and zinc plating. The diameter of the wire electrode ranges from approximately 30 μm to approximately 300 μm, and the thickness of the plate electrode ranges from approximately 30 μm to approximately 300 μm. The electrical discharge machining (EDM) unit 50, as a separation energy source 40, facilitates the separation (segmentation) or thinning of wafers (such as...). Figures 7a to 7b (as shown) or ingot (such as) Figure 8 (as shown) and other solid structures. Furthermore, the hardness or structural strength of the modified layer 120 in the processing target area 110 of the solid structure 100 is lower than other areas, which helps the discharge energy of the electrical discharge machining (EDM) unit 50 to quickly remove the modified layer 120, thereby rapidly separating or thinning the solid structure 100 from the modified layer 120. For example, the present invention can apply discharge energy from the electrical discharge machining (EDM) unit 50 to a separation starting point 124 in the first region 122 of the modified layer 120 of the solid structure 100, thereby separating or thinning the solid structure 100 from the separation starting point 124 of the modified layer 120. Since the stress (such as compressive stress or tensile stress) of the modified layer 120 in the processing target area 110 of the solid structure 100 is different from other areas (non-processing target areas), the degree of separation can be easily increased from the separation starting point 124 of the modified layer 120 (see... Figure 7a and Figure 7bIn other words, the present invention can not only accelerate the separation speed, but also reduce the power consumption of the electrical discharge machining (EDM) unit 50. Since the operating principle, operation mode, and structure of the electrical discharge machining (EDM) unit 50 are well known to those skilled in the art and are not the focus of this invention, they will not be described further.

[0133] Although the present invention is illustrated by using a discharge machining (EDM) unit having a single discharge electrode 52 (a single conductive structure) to illustrate the separation step of a solid structure (i.e., a single workpiece), as an example, Figure 8 As shown, however, the present invention is not limited thereto. The discharge electrode 52 of the present invention can also, for example, simultaneously perform separation steps on multiple solid structures 100 (i.e., multiple works to be processed), such as... Figure 13a As shown, the discharge electrode 52 can simultaneously separate multiple solid structures 100. Similarly, the present invention can also use multiple separated discharge electrodes 52 (multiple conductive structures) to simultaneously discharge a solid structure 100 (such as...). Figure 13b (as shown) or multiple solid structures 100 (such as) Figure 13c The separation step is performed as shown. Furthermore, the separation step S20 of the present invention is not limited to being performed in the aforementioned liquid or gaseous fluids; it can also be performed in a vacuum environment. In other words, the separation step S20 of the present invention can perform wet separation of the workpiece 100 by the discharge electrode 52 (i.e., in a liquid tank or heated liquid tank 80) and dry separation of the solid structure 100 by the discharge electrode 52 (i.e., in air or a vacuum environment). During the dry separation of the solid structure 100 by the discharge electrode 52, the present invention can selectively cool the discharge electrode 52. For example, a cooling fluid such as a liquid or gas can be used to cool or maintain the temperature of the discharge electrode 52, or the discharge electrode 52 can be heated by the discharge energy, i.e., without using a cooling fluid such as a liquid or gas. For the same reason, each step of the processing procedure of the present invention, such as the aforementioned modification step S10 or separation step S20, and the subsequent grinding and polishing step S30, filling step S70 or heating step S50, can be selectively carried out in the aforementioned liquid or gaseous fluids or in a vacuum environment.

[0134] like Figure 7cAs shown, the non-contact processing apparatus of the present invention may optionally include an electric field source 46. In the separation step S20 described above, the electric field source 46 provides an electric field to the modified layer 120 of the solid structure 100, causing free electrons to accumulate at the interface between the modified layer 120 and the solid structure 100. This assists the separation energy source 40 in separating or thinning the solid structure 100 from the modified layer 120, resulting in the separated or thinned solid structure. The direction of the electric field is not limited; as long as free electrons can accumulate at the interface between the modified layer 120 and the solid structure 100, it is applicable to the present invention.

[0135] In addition, such as Figure 7c As shown, before performing separation step S20, the present invention may selectively contact the solid structure 100 having the modified layer 120 with a thermally expanding material 48, for example, by immersing the solid structure 100 in the aforementioned thermally expanding material 48 (e.g., water), allowing the thermally expanding material 48 to penetrate into the pores or cracks of the modified layer 120. Alternatively, the present invention may directly fill the pores or cracks of the modified layer 120 with the thermally expanding material 48, wherein this thermally expanding material is, for example, a liquid such as an aqueous solution or a gas such as water vapor, or even a liquid-gas mixture. Therefore, when separation energy / heat is subsequently applied to the solid structure 100 having the modified layer 120 by the separation energy source 40 (and subsequently the heat source 70), the thermally expanding material 48 will absorb the separation energy / heat and expand or boil, thereby causing the solid structure 100 to crack from the modified layer 120. Therefore, the thermally expanding material 48 of the present invention can assist the separation energy source 40 in separating or thinning the solid structure from the modified layer 120.

[0136] In addition, such as Figure 8 As shown, the non-contact processing apparatus of the present invention may optionally include, for example, another microwave or radio frequency source 85. This other microwave or radio frequency source 85 can, for example, provide another microwave or radio frequency energy to the solid structure 100 from the direction along the modified layer 120 via the discharge electrode 52 of the electrical discharge machining (EDM) unit 50. This other microwave or radio frequency source 85 can be used in the aforementioned separation step S20 as a separation energy source to accelerate the separation speed, or in the subsequent polishing step S30 as a polishing unit to reduce the surface roughness of the cut or thinned surface of the solid structure after separation or thinning, or in the heating step S50 as a heating unit to increase the temperature of the solid structure. By increasing the temperature, the absorption rate of the radiation source energy can be increased, and the efficiency of the electrical discharge machining can be improved. Furthermore, the electrical discharge machining (EDM) unit 50 of the present invention can simultaneously provide discharge energy and another microwave or radio frequency energy via the discharge electrode 52, thereby simultaneously achieving separation, polishing, and heating effects, for example. The electrical discharge machining (EDM) unit 50 of the present invention can also provide discharge energy and another microwave or radio frequency energy separately via the discharge electrode 52, thereby achieving separation, polishing and heating effects, for example, respectively.

[0137] In addition, such as Figure 9a and Figure 9b As shown, the processing apparatus of the present invention selectively includes, for example, a polishing unit 60 for polishing the separated or thinned solid structure in the polishing step S30 of the processing procedure, so that the surface roughness of its cut or thinned surface is reduced, for example, from about 30 μm to about 1 μm to about 10 μm to about 0.05 μm. The polishing unit 60 may, for example, be a... Figures 3 to 5 and Figure 9a and Figure 9b The laser source shown is 20. Figure 7a , Figure 7b and Figure 8 The electrical discharge machining (EDM) unit 50 shown is... Figures 3 to 5 and Figure 7a , Figure 7b and Figures 8 to 9a The microwave or radio frequency source 30 shown and / or Figure 8 Another microwave or radio frequency source 85 shown is used to polish the separated or thinned solid structure (e.g., the first half structure 100a or the first half structure 100a and the second half structure 100b) by using laser energy, discharge energy or microwave or radio frequency energy to reduce the surface roughness of the cut or thinned surface.

[0138] In addition, such as Figures 8 to 9a As shown, the processing apparatus 100 of the present invention may selectively include, for example, a heat source 70 for performing a heating step S50, thereby heating the solid structure 100 during or after performing the modification step S10, separation step S20 and / or polishing step S30 of the above-mentioned processing procedure. Figure 8 Taking a solid structure 100 as an example of a crystal ingot. Figure 9a This example uses a wafer as an example of a separated or thinned solid structure. The heat source 70 is, for example, a... Figures 3 to 5 , Figure 7a , Figure 7b and Figure 9a The laser source shown is 20. Figures 3 to 5 and Figure 7a , Figure 7b and Figures 8 to 9a The microwave or radio frequency source 30 shown Figures 8 to 9aThe diagram shows a heating liquid tank 80, another laser source, another microwave or radio frequency source 85, and / or an infrared light source. The heating liquid tank 80, serving as the heat source 70, has a heating liquid 82, preferably hot oil, and more preferably a high-temperature resistant oil, such as fluorinated oil. In all or part of the above processing steps, the solid structure 100 can be immersed in the heating liquid 82, thereby reducing unnecessary cracks or crack expansion caused by thermal shock. In the separation step S20, if the solid structure 100 is simultaneously heated by the heat source 70, the temperature of the solid structure 100 can be increased. Heating generates more free electrons on the modified layer 120. The generation of free electrons allows for the absorption of more microwave energy compared to other areas (non-processing target areas), thus raising the temperature of the modified layer 120 in the processing target area 110. Furthermore, the increased temperature helps the modified layer 120 absorb more laser energy to generate more free electrons, and thus absorb more electromagnetic energy provided by the microwave or radio frequency radiation source, forming a positive cycle.

[0139] In addition, such as Figure 8 As shown, the processing apparatus 100 of the present invention may optionally include a detection and control unit 90 for detecting the formation state of the modified layer 120 of the solid structure 100 in the detection and control step S40 of the processing procedure. For example, by detecting the amount of free electrons, it can determine the change in photoconductivity attenuation and the defect formation state, and then feed back and control the laser energy provided by the laser source 20 and / or feed back and control the microwave or radio frequency energy provided by the microwave or radio frequency source 30, for example, controlling the magnitude, frequency, or processing feed rate of the microwave or radio frequency energy provided by the microwave or radio frequency source 30. The detection and control step S40 may be performed simultaneously, for example, during the modification step S10, the separation step S20, and / or the polishing step S30.

[0140] In addition, during the separation step S20 described above, surface cracks 112 of varying depths will occur around the processing target area 110 of the solid structure 100 (cut or thinned surface). Therefore, the present invention may also selectively perform a filling step S70, for example, using an external force disturbance source 95 (such as... Figure 10aAs shown), for example, an ultrasonic unit provides an ultrasonic-driven filling material 114 to fill surface cracks 112 on the cut or thinned surface of the processing target area 110, preventing these excess surface cracks 112 from continuing to expand. This not only strengthens the structure but also achieves the effect of quickly (or even accelerating) the separation step S20. The composition of the filling material can be, for example, Si, SiC, SiGe, Ge, GaAs, GaN, or InP, but is not limited to these. Any material suitable for filling cracks, such as fillers or adhesives, can be used in this invention. The frequency range of the ultrasonic waves is, for example, but not limited to, from about 15 kHz to about 30 kHz. This filling step S70 can be selectively performed in a fluid, such as a heated liquid 82, water, or air, which can generate fluid droplets and impact pressure waves in the fluid, causing the material particles of the filling material 114 to embed into the surface cracks 112 on the cut or thinned surface of the processing target area 110. Furthermore, the present invention is not limited to an ultrasonic unit with a specific structure, and there is no particular limitation on the direction in which the ultrasonic unit provides ultrasonic waves; it can be any direction, as long as it can achieve the filling effect, it can be applied to the present invention.

[0141] Furthermore, the present invention can also utilize the heat energy provided by the heat source 70 to cause oxidation or other chemical reactions on the surface of the separated or cut solid structure (e.g., the first half structure 100a) or the surface of its modified layer 120, thereby forming a structure such as Figure 10b The filling material 114 shown, such as silicon oxide or oxide, fills the surface crack 112 and prevents the surface crack 112 from propagating.

[0142] In summary, based on the foregoing, the non-contact processing apparatus and method of the present invention may have one or more of the following advantages:

[0143] (1) In the modification step, this invention utilizes an electromagnetic radiation source to induce qualitative changes or defects in the processing target area of ​​the solid structure, thereby creating differences in stress, structural strength, lattice type, or hardness between it and other areas. In the separation step, this invention can rapidly separate or thin the solid structure by utilizing these differences in stress, structural strength, lattice type, or hardness.

[0144] (2) In the separation step, the present invention applies a separation energy to the solid structure that has undergone the modification phenomenon, thereby taking advantage of the differences in stress, structural strength, lattice type or hardness between the modified layer and other regions, and the different reactions to the separation energy source, to separate or thin the solid structure from the modified layer.

[0145] (3) The present invention heats the solid structure with a heat source, which can increase the temperature of the solid structure, thereby increasing the absorption rate of radiation source energy.

[0146] (4) The present invention can detect the formation state of the modified layer of a solid structure, and then control the laser energy provided by the laser source and / or control the microwave or radio frequency energy provided by the microwave or radio frequency source, such as controlling the magnitude, frequency or processing feed rate of the microwave or radio frequency energy provided by the microwave or radio frequency source.

[0147] (5) The present invention can accelerate the separation speed of solid structures and fill the surface cracks on the processing target area to prevent the expansion of excess surface cracks.

[0148] (6) The present invention can be processed in a heated liquid tank, which can reduce the unnecessary cracks or crack propagation caused by thermal shock and prevent unnecessary surface crack expansion.

[0149] The above description is merely illustrative and not restrictive. Any equivalent modifications or alterations made without departing from the spirit and scope of this invention should be included in the appended claims.

Claims

1. A non-contact processing apparatus for performing a processing procedure on at least one solid structure, characterized in that, The device comprises at least: A modifying energy source is used to provide modifying energy to a processing target area of ​​the solid structure in a modifying step of the processing procedure, so that the processing target area of ​​the solid structure undergoes a qualitative change or defect, thereby forming a modified layer, wherein the modifying energy source is a laser source and the modifying energy is laser energy. as well as A separation energy source is provided for non-contactly applying separation energy to the solid structure having the modified layer in a separation step of the processing procedure, thereby separating or thinning the solid structure from the modified layer, so that the solid structure becomes a separated or thinned solid structure. The separation energy source includes a microwave or radio frequency source for providing microwave or radio frequency energy as the separation energy. The modification step and the separation step are performed simultaneously, and the separation energy and the modification energy form a positive cycle with each other in the processing target area.

2. The non-contact processing device as described in claim 1, characterized in that, It further includes a detection and control unit for detecting the formation state of the modified layer of the solid structure during a detection and control step of the processing procedure, thereby feeding back and controlling the laser energy provided by the laser source and / or feeding back and controlling the microwave or radio frequency energy provided by the microwave or radio frequency source.

3. The non-contact processing device as described in claim 1, characterized in that, The separation energy source further includes a discharge processing unit for providing discharge energy as the separation energy via at least one discharge electrode.

4. The non-contact processing device as described in claim 1, characterized in that, It further includes a detection and control unit, which, in a detection and control step of the processing procedure, detects the change in photoconductivity attenuation and defect formation state of the modified layer by detecting the amount of free electrons, and then feeds back to control the laser energy provided by the laser source and / or feeds back to control the microwave or radio frequency energy provided by the microwave or radio frequency source.

5. The non-contact processing device as described in claim 1, 2, 3 or 4, characterized in that, It also includes an electric field source that provides an electric field to assist the separation energy source in separating or thinning the solid structure from the modified layer, so that the solid structure becomes the separated or thinned solid structure.

6. The non-contact processing device as described in claim 1, characterized in that, It also includes a polishing unit for polishing the separated or thinned solid structure in one of the polishing steps of the processing procedure.

7. The non-contact processing device as described in claim 6, characterized in that, The polishing unit comprises a laser source, a discharge processing unit, a microwave or radio frequency source, and / or another microwave or radio frequency source, which respectively provide laser energy, discharge energy, microwave or radio frequency energy, and / or another microwave or radio frequency energy to polish the separated or thinned solid structure. The separation energy source includes the discharge processing unit and / or the microwave or radio frequency source.

8. The non-contact processing device as described in claim 7, characterized in that, The other microwave or radio frequency source is provided with the other microwave or radio frequency energy via at least one discharge electrode of the discharge processing unit.

9. The non-contact processing device as described in claim 1, characterized in that, It also includes a heat source for heating the solid structure in the modification step, the separation step and / or a heating step of the processing procedure.

10. The non-contact processing device as described in claim 9, characterized in that, The heat source is a laser source, a microwave or radio frequency source, a hot oil tank, another laser source, another microwave or radio frequency source and / or an infrared light source, and the separate energy source includes a discharge processing unit and / or the microwave or radio frequency source.

11. The non-contact processing device as described in claim 1, characterized in that, The solid structure is also in contact with a thermally expanding material that permeates into the modified layer and causes the thermally expanding material to expand in volume, thereby separating or thinning the solid structure from the modified layer during the separation step of the processing procedure.

12. The non-contact processing device as described in claim 1, characterized in that, The processing target area of ​​the separated or thinned solid structure is provided with a filling material to fill the surface cracks on the processing target area of ​​the separated or thinned solid structure.

13. The non-contact processing device as described in claim 1, characterized in that, It also includes an external disturbance source that drives a filling material to fill surface cracks in the separated or thinned solid structure.

14. The non-contact processing device as described in claim 12, characterized in that, The filling material is formed on the processing target area of ​​the separated or thinned solid structure by means of a heat source, thereby filling the surface cracks on the processing target area of ​​the separated or thinned solid structure.

15. The non-contact processing apparatus as described in claim 1, 8, or 13, characterized in that, The solid structure is immersed in a heated liquid.

16. The non-contact processing device as described in claim 1, characterized in that, The direction in which the separating energy source applies the separating energy to the solid structure is different from the direction in which the laser source provides the laser energy to the solid structure.

17. The non-contact processing device as described in claim 1, characterized in that, The direction in which the separating energy source applies the separating energy to the solid structure is the same as the direction in which the laser source provides the laser energy to the solid structure.

18. The non-contact processing device as described in claim 1, characterized in that, The non-contact processing device performs the processing procedure on the target area of ​​the solid structure in a fluid.

19. The non-contact processing device as described in claim 1, characterized in that, The non-contact processing device performs the processing procedure on the target area of ​​the solid structure in a vacuum environment.

20. The non-contact processing device as described in claim 3, characterized in that, The number of discharge electrodes in the electrical discharge machining unit is one or more.

21. The non-contact processing device as described in claim 1, characterized in that, The number of such solid structures is one or multiple.

22. A non-contact processing method for performing a processing procedure on at least one solid structure, characterized in that, Includes the following steps: The processing procedure includes a modification step in which modification energy is supplied to a target area of ​​the solid structure by a modification energy source, causing a qualitative change or defect in the target area of ​​the solid structure, thereby forming a modified layer. The modification energy source is a laser source, and the modification energy is laser energy. One of the processing steps involves a separation step in which a separation energy source is used to non-contactly apply separation energy to the solid structure having the modified layer, thereby separating or thinning the solid structure from the modified layer, resulting in a separated or thinned solid structure. The separation energy source includes a microwave or radio frequency source to provide microwave or radio frequency energy as the separation energy. The modification step and the separation step are performed simultaneously, and the separation energy and the modification energy form a positive cycle with each other in the processing target area.

23. The non-contact processing method as described in claim 22, characterized in that, The separation energy source further includes a discharge processing unit that provides discharge energy to apply the separation energy to the solid structure having the modified layer.

24. The non-contact processing method as described in claim 22, characterized in that, One of the modified layers has a first region with a separation starting point, and the separation step is to separate or thin the solid structure from the separation starting point of the modified layer using the separation energy.

25. The non-contact processing method as described in claim 22, characterized in that, The separation step also includes applying an electric field to the solid structure to assist the separation energy source in separating from or thinning the solid structure from the modified layer.

26. The non-contact processing method as described in claim 22, characterized in that, The separation step further includes allowing a thermally expanding material to penetrate into the modified layer of the solid structure and expand the volume of the thermally expanding material, thereby assisting the separation energy source in separating from or thinning the solid structure from the modified layer.

27. The non-contact processing method as described in claim 22, characterized in that, The process includes a polishing step following the separation step, whereby a polishing unit is used to polish the separated or thinned solid structure.

28. The non-contact processing method as described in claim 27, characterized in that, The process includes, during or after the modification step, the separation step, and / or the polishing step, a heating step to heat the solid structure.

29. The non-contact processing method as described in claim 22, characterized in that, It also includes a filling step to fill surface cracks on the processing target area of ​​the separated or thinned solid structure.

30. The non-contact processing method as described in claim 22, characterized in that, The processing procedure also includes a follow-up step on the separated or thinned solid structure, which is selected from the group consisting of coating, vapor deposition, photolithography, lithography, etching and diffusion steps.

31. The non-contact processing method as described in claim 22, characterized in that, The processing target area is located on a portion of the solid structure.

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