Manufacturing method of LED packaging module and LED packaging module

Abstract

The application discloses a manufacturing method of an LED packaging module and the LED packaging module. The manufacturing method comprises the following steps: providing an LED chip, fixing the LED chip on a temporary substrate by using an encapsulation layer, fixing the LED chip and the encapsulation layer on a metal substrate, removing the temporary substrate, forming a first through hole and a second through hole on the encapsulation layer, forming a first conductive column and a second conductive column in the first through hole and the second through hole, forming a first lead wire electrically connected with a first electrode and the first conductive column and a second lead wire electrically connected with a second electrode and the second conductive column on the LED chip and the encapsulation layer, and patterning the metal substrate to form a first metal pattern and a second metal pattern which are electrically isolated from each other, wherein the first conductive column is electrically connected with the first metal pattern, and the second conductive column is electrically connected with the second metal pattern. In the above manner, the manufacturing method of the LED packaging module is simpler, the production efficiency is higher, and the light emitting efficiency of the corresponding LED packaging module is also higher.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of circuit board, in particular to a manufacturing method of LED packaging module and the LED packaging module. BACKGROUND

[0002] Nowadays, in the LED (light-emitting diode) packaging module, generally two kinds of chip structures of positive chip and flip chip are involved.

[0003] Among them, the positive chip is usually poor in heat conduction performance of sapphire substrate, so as to reduce the light output and reliability of the chip; and the positive also needs to realize the corresponding electrical connection of the LED chip by means of gold wire, and needs the support of conventional packaging, which limits the thinness of the positive packaging. The manufacturing process of the flip chip is more complex, the reflector usually absorbs light, which affects the photoelectric conversion efficiency, and it is also difficult to realize the red flip chip, so that the production efficiency and manufacturing cost are both high. SUMMARY

[0004] The present application provides a manufacturing method of LED packaging module and the LED packaging module, so as to solve the problems of low light output efficiency of the LED packaging module in the prior art, unable to effectively thin, or complex process, low photoelectric conversion efficiency, and high production efficiency and manufacturing cost.

[0005] One of the technical solutions adopted by the present application is: a manufacturing method of LED packaging module is provided, wherein the manufacturing method comprises: providing an LED chip, the LED chip comprising a light emitting surface, a back light surface arranged opposite to the light emitting surface, and a first electrode and a second electrode arranged on the light emitting surface; fixing the side of the LED chip corresponding to the light emitting surface on a temporary substrate by using an encapsulation layer; fixing the side of the LED chip and the encapsulation layer corresponding to the back light surface on a metal substrate; removing the temporary substrate; forming a first through hole and a second through hole from the side of the encapsulation layer corresponding to the light emitting surface; forming a first conductive column and a second conductive column in the first through hole and the second through hole; forming a first lead line electrically connected with the first electrode and the first conductive column and a second lead line electrically connected with the second electrode and the second conductive column on the side of the LED chip and the encapsulation layer corresponding to the light emitting surface; patterning the metal substrate to form a first metal pattern and a second metal pattern which are electrically isolated from each other, wherein the first conductive column is electrically connected with the first metal pattern, and the second conductive column is electrically connected with the second metal pattern.

[0006] The step of fixing the LED chip and the encapsulation layer corresponding to the light-out surface side on the temporary substrate includes: forming a first encapsulation layer in a dot shape on the temporary substrate; pressing the LED chip corresponding to the light-out surface side into the first encapsulation layer before the first encapsulation layer is completely cured, wherein the cross-sectional dimension of the first encapsulation layer gradually decreases in the direction from the light-out surface to the back light surface; and forming a second encapsulation layer surrounding the LED chip and the first encapsulation layer on the temporary substrate, wherein the second encapsulation layer is used to reflect the light generated by the LED chip and transmitted in the first encapsulation layer.

[0007] The step of fixing the LED chip and the encapsulation layer corresponding to the back light surface side on the metal substrate further includes: grinding or etching the side of the encapsulation layer corresponding to the back light surface, so that the side of the encapsulation layer corresponding to the back light surface is flush with the back light surface.

[0008] The step of fixing the LED chip and the encapsulation layer corresponding to the back light surface side on the metal substrate includes: bonding the LED chip and the encapsulation layer corresponding to the back light surface side on the metal substrate, or forming the metal substrate on the side of the LED chip and the encapsulation layer corresponding to the back light surface.

[0009] The step of forming the first through hole and the second through hole from the side of the encapsulation layer corresponding to the light-out surface further includes: grinding or etching the side of the encapsulation layer corresponding to the light-out surface, so that the side of the encapsulation layer corresponding to the light-out surface is flush with the first electrode and the second electrode.

[0010] The step of forming the first lead wire electrically connecting the first electrode and the first conductive column and the second lead wire electrically connecting the second electrode and the second conductive column on the side of the LED chip and the encapsulation layer corresponding to the light-out surface includes: forming the first lead wire and the second lead wire by using a magnetron sputtering method or an electroplating etching method, wherein the width of the first lead wire and the second lead wire is not greater than 30 microns.

[0011] The manufacturing method further includes: attaching a fluorescent film or a quantum dot film on the side of the LED chip and the encapsulation layer corresponding to the light-out surface.

[0012] Yet another technical solution adopted by the present application is: provide an LED packaging module, wherein the LED packaging module comprises: a metal substrate, the metal substrate comprises a first metal pattern and a second metal pattern which are electrically isolated from each other; an LED chip, the LED chip comprises a light emitting surface, a back surface arranged opposite to the light emitting surface, and a first electrode and a second electrode arranged on the light emitting surface, the LED chip is attached to the metal substrate corresponding to one side of the back surface; an encapsulation layer, the encapsulation layer surrounds the periphery of the LED chip and is attached to the metal substrate, wherein the encapsulation layer forms a first through hole and a second through hole; a first conductive column and a second conductive column are arranged in the first through hole and the second through hole respectively and are electrically connected with the first metal pattern and the second metal pattern respectively; a first lead wire and a second lead wire are arranged on the side of the LED chip and the encapsulation layer corresponding to the light emitting surface and are electrically connected with the first electrode and the first conductive column and the second electrode and the second conductive column respectively.

[0013] Among them, the encapsulation layer comprises a first encapsulation layer and a second encapsulation layer, wherein the first encapsulation layer is arranged in a dot shape, the light emitting surface is embedded in the first encapsulation layer, the cross-sectional dimension of the first encapsulation layer gradually decreases in the direction from the light emitting surface to the back surface, and the second encapsulation layer surrounds the periphery of the LED chip and the first encapsulation layer and is used for reflecting the light generated by the LED chip and transmitted in the first encapsulation layer, wherein the first through hole and the second through hole are formed in the second encapsulation layer.

[0014] Among them, the encapsulation layer is flush with the first electrode and the second electrode corresponding to one side of the light emitting surface, the first lead wire and the second lead wire are attached to the side of the LED chip and the encapsulation layer corresponding to the light emitting surface, and the width of the first lead wire and the second lead wire is not greater than 30 microns.

[0015] The beneficial effects of the present application are: different from the prior art, the LED packaging module manufacturing method provided by the present application provides an LED chip including a light emitting surface, a back surface opposite to the light emitting surface, and a first electrode and a second electrode arranged on the light emitting surface, so that the LED chip can be fixed on a temporary substrate by using an encapsulation layer corresponding to one side of the light emitting surface, and after the LED chip and the encapsulation layer corresponding to one side of the back surface are fixed on a metal substrate, the temporary substrate is removed, and the first through hole and the second through hole are formed from the side of the encapsulation layer corresponding to the light emitting surface, so that the first conductive column and the second conductive column are formed in the first through hole and the second through hole, and the first lead electrically connected with the first electrode and the first conductive column and the second lead electrically connected with the second electrode and the second conductive column are formed on the side of the LED chip and the encapsulation layer corresponding to the light emitting surface, so that the metal substrate is patterned, and then the first metal pattern and the second metal pattern electrically isolated from each other are formed, wherein the first conductive column is electrically connected with the first metal pattern, and the second conductive column is electrically connected with the second metal pattern, so that the light emitting efficiency of the LED chip can be effectively improved, and by using the semiconductor process wiring to replace the conventional gold wire bonding method, the light and thin LED packaging module can be effectively realized; and the conventional packaging support and reflector do not need to be arranged correspondingly, so that the photoelectric conversion efficiency can be effectively improved, the overall manufacturing process can be simplified, the production efficiency can be improved, and the production cost can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. Among them:

[0017] Figure 1a is a flowchart of the first embodiment of the LED packaging module manufacturing method of the present application;

[0018] Figures 1b-1l is Figure 1a is a structural schematic diagram of an embodiment corresponding to S11-S18 in the present application;

[0019] Figure 2a is Figure 1a is a flowchart of a specific embodiment corresponding to S12 in the present application;

[0020] Figures 2b-2g is Figure 2a is a structural schematic diagram of an embodiment corresponding to S121-S123 in the present application;

[0021] Figure 3 is a structural schematic diagram of the first embodiment of the LED packaging module of the present application;

[0022] Figure 4 is a structural schematic diagram of a second embodiment of the LED packaging module of the present application. DETAILED DESCRIPTION

[0023] To make the technical problems solved by the present application, the technical solutions adopted and the technical effects reached more clear, the technical solutions of the embodiments of the present application will be further described in detail below with reference to the drawings.

[0024] Reference herein to "embodiment" means that the particular feature, structure or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily mutually exclusive of other embodiments. It will be explicitly understood by one of ordinary skill in the art that the embodiments described herein can be combined with other embodiments.

[0025] Please refer to Figures 1a-1l , wherein, Figure 1a is a flowchart of a first embodiment of the manufacturing method of the LED packaging module of the present application, Figures 1b-1l is Figure 1a a structural schematic diagram of an embodiment corresponding to S11-S18 in

[0026] S11: providing an LED chip, the LED chip comprising a light-emitting surface, a back surface arranged opposite to the light-emitting surface, and a first electrode and a second electrode arranged on the light-emitting surface.

[0027] Specifically, as shown in Figure 1b , at least one positive chip is provided, wherein the LED chip 21 specifically comprises a light-emitting surface 211, a back surface 212, a first electrode 213 and a second electrode 214, and the light-emitting surface 211 is arranged opposite to the back surface 212, and the first electrode 213 and the second electrode 214 are specifically arranged on the light-emitting surface 211 of the LED chip 21.

[0028] S12: fixing the LED chip on a temporary substrate by using an encapsulation layer corresponding to one side of the light-emitting surface.

[0029] Further, as shown in Figure 1c , at least part of the LED chip 21 is covered by the encapsulation layer 22, so as to fix the LED chip 21 on the temporary substrate 23 corresponding to one side of the light-emitting surface 211 of the LED chip 21, so as to provide a certain degree of strength support for the subsequent process flow through the temporary substrate 23.

[0030] Optionally, the temporary substrate 23 can be specifically any reasonable material plate with a certain supporting strength, such as a glass substrate or a resin substrate, and the present application does not limit this.

[0031] Furthermore, the LED chip 21 can also be bonded to the temporary substrate using adhesive materials such as die bonder, pyrolytic film, and UV film to provide a certain support strength for subsequent processes. This application does not limit this.

[0032] It is understood that the number of LED chips 21 can be any reasonable number, such as 1, 2 or 3, and the specific number is determined by the actual manufacturing process scenario. This application does not limit this number.

[0033] For ease of understanding, in this embodiment, the number of LED chips 21 is specifically described as two, and the encapsulation layer 22 is specifically flush with one side of the backlight surface 212 of each LED chip 21.

[0034] S13: Fix the LED chip and encapsulation layer to the metal substrate on the side corresponding to the backlight side.

[0035] Furthermore, such as Figure 1d As shown, the LED chip 21 and the encapsulating layer 22 are fixed on one side of the backlight surface 212 of the LED chip 21 to a metal substrate 24.

[0036] Understandably, the metal substrate 24 may specifically be a copper-clad laminate, a copper plate, or any other reasonable conductive metal plate, which can be patterned to form a set circuit layer.

[0037] S14: Remove the temporary substrate.

[0038] Understandably, such as Figure 1e As shown, after fixing the LED chip 21 and the encapsulating layer 22 to the metal substrate 24 on the side corresponding to the backlight surface 212, the temporary substrate 23 can be removed.

[0039] S15: A first through hole and a second through hole are formed on the side of the sealant layer corresponding to the light-emitting surface.

[0040] Specifically, such as Figure 1f As shown, holes are drilled in the encapsulation layer 22 from the side corresponding to the light-emitting surface 211 of the LED chip 21, so as to form a first through hole 221 and a second through hole 222 on the encapsulation layer 22 at intervals corresponding to each LED chip 21.

[0041] S16: A first conductive post and a second conductive post are formed in the first through hole and the second through hole.

[0042] Furthermore, such as Figure 1gAs shown, the first conductive pillar 251 and the second conductive pillar 252 are formed in the first through hole 221 and the second through hole 222, respectively, such as by filling the through holes with electroplating, i.e., a metal layer is formed in the first through hole 221 and the second through hole 222 by electroplating, respectively, to form the first conductive pillar 251 and the second conductive pillar 252.

[0043] S17: Forming a first lead wire electrically connecting the first electrode and the first conductive pillar and a second lead wire electrically connecting the second electrode and the second conductive pillar on the side of the LED chip and the encapsulation layer corresponding to the light emitting surface.

[0044] Specifically, as shown in FIG. 2, the first lead wire 261 and the second lead wire 262 are formed on the side of the LED chip 21 and the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21, respectively, and the first lead wire 261 is electrically connected to the first electrode 213 and the first conductive pillar 251, while the second lead wire 262 is electrically connected to the second electrode 214 and the second conductive pillar 252. Figure 1h

[0045] S18: Patterning the metal substrate to form a first metal pattern and a second metal pattern electrically isolated from each other, wherein the first conductive pillar is electrically connected to the first metal pattern, and the second conductive pillar is electrically connected to the second metal pattern.

[0046] Further, as shown in FIG. 2 and FIG. 3, the metal substrate 24 is patterned, such as etched, to form the first metal pattern 241 and the second metal pattern 242 electrically isolated from each other corresponding to each LED chip 21, and the first conductive pillar 251 is electrically connected to the first metal pattern 241, while the second conductive pillar 252 is electrically connected to the second metal pattern 242. Figure 1i

[0047] Further, in an embodiment, as shown in FIG. 2, when the LED chip 21 provided in this embodiment is at least two, after the above S18, specifically, it can further include: cutting and separating the encapsulation layer 22 and the patterned metal substrate 24 corresponding to each LED chip 21 to obtain at least two LED packaging modules independent of each other, and each LED packaging module includes only one LED chip 21. Figure 1j

[0048] Further, in an embodiment, after the above S12, before S13, specifically, it can further include: grinding or etching the side of the encapsulation layer 22 corresponding to the back light surface 212 to make the side of the encapsulation layer 22 corresponding to the back light surface 212 flush with the back light surface 212.

[0049] ​​​It can be understood that the S12 can be forming the encapsulation layer 22 on the side of the LED chip 21 corresponding to the light emitting surface 211, and then fixing the encapsulation layer 22 and the side of the LED chip 21 corresponding to the light emitting surface 211 of the LED chip 21 on the temporary substrate 23.

[0050] Therefore, in order to not increase the manufacturing process difficulty of forming the encapsulation layer 22, the encapsulation layer 22 formed on the side of the LED chip 21 corresponding to the light emitting surface 211 will inevitably cover the LED chip 21, so after forming the encapsulation layer 22, the side of the encapsulation layer 22 corresponding to the back surface 212 needs to be polished or etched, so that the side of the encapsulation layer 22 corresponding to the back surface 212 of the LED chip 21 is flush with the back surface 212, so as to effectively improve the heat dissipation effect of the LED chip 21.

[0051] Further, in an embodiment, the S13 can further include bonding and fixing the LED chip 21 and the side of the encapsulation layer 22 corresponding to the back surface 212 on the metal substrate 24.

[0052] It can be understood that the LED chip 21 and the encapsulation layer 22 can be bonded and fixed on the metal substrate 24 provided in advance by using glue or the adhesion of the encapsulation layer 22 itself or any other reasonable material with adhesion corresponding to the back surface 212 of the LED chip 21.

[0053] Further, in an embodiment, the S13 can further include forming the metal substrate 24 on the side of the LED chip 21 and the encapsulation layer 22 corresponding to the back surface 212.

[0054] It can be understood that after obtaining the LED chip 21 and the encapsulation layer 22, the metal substrate 24 can be made on the LED chip 21 and the encapsulation layer 22 by electroplating or copper plating corresponding to the back surface 212 of the LED chip 21.

[0055] Further, in an embodiment, after the S14 and before the S15, the S15 can further include polishing or etching the side of the encapsulation layer 22 corresponding to the light emitting surface 211, so that the side of the encapsulation layer 22 corresponding to the light emitting surface 211 is flush with the first electrode 213 and the second electrode 214.

[0056] It can be understood that in order to ensure that the encapsulation layer 22 and the LED chip 21 can be more reliably fixed on the temporary substrate 23, a temporary adhesive can be provided on the temporary substrate 23 to fix the encapsulation layer 22 and the LED chip 21.

[0057] Therefore, when the temporary substrate 23 is removed, the temporary adhesive also needs to be removed synchronously, and the side of the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21 is ground or etched to remove the residual adhesive that may exist. When the first electrode 213 and the second electrode 214 on the LED chip 21 are electrodes with sufficient thickness, the first electrode 213 and the second electrode 214 can also be ground, so that the side of the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21 is flush with the first electrode 213 and the second electrode 214.

[0058] Further, in an embodiment, S17 can further specifically include forming the first lead wire 261 and the second lead wire 262 by using a magnetron sputtering method or an electroplating etching method, wherein the width of the first lead wire 261 and the second lead wire 262 is not greater than 30 microns.

[0059] Optionally, the width of the first lead wire 261 and the second lead wire 262 formed by using the magnetron sputtering method or the electroplating etching method can also be not greater than 20 microns, or not greater than 10 microns, which is not limited in the present application.

[0060] Further, in an embodiment, after S17 and before S18, it can further specifically include attaching a fluorescent film 27 to the side of the LED chip 21 and the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21. In other embodiments, the fluorescent film 27 can also be replaced by a quantum dot film, which is not limited in the present application.

[0061] It can be understood that, as shown in Figure 1k and Figure 1l In order to enable the LED chip 21 to display corresponding fluorescence, it is necessary to attach a fluorescent film 27 or a quantum dot film to the side of the LED chip 21 and the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21, and after performing S18, the encapsulation layer 22 and the patterned metal substrate 24 are cut and separated corresponding to each LED chip 21, so as to correspondingly obtain at least two LED packaging modules independent of each other.

[0062] The above scheme forms the first lead 261 and the second lead 262 on the side of the LED chip 21 and the encapsulation layer 22 corresponding to the light emitting surface 211 of the LED chip 21, respectively, and makes the first lead 261 electrically connected to the first electrode 213 and the first conductive column 251, and the second lead 262 electrically connected to the second electrode 214 and the second conductive column 252. Then, the metal substrate 24 is patterned to form the first metal pattern 241 and the second metal pattern 242 corresponding to each LED chip 21 and electrically isolated from each other, and the first conductive column 251 is electrically connected to the first metal pattern 241, and the second conductive column 252 is electrically connected to the second metal pattern 242. Thus, the light emitting efficiency of the LED chip 21 can be effectively improved. The semiconductor process wiring is used instead of the conventional gold wire bonding, which can effectively realize the thinning of the obtained LED packaging module. In addition, the support and the reflector of the conventional packaging do not need to be arranged, which can effectively improve the photoelectric conversion efficiency, simplify the overall manufacturing process, improve the production efficiency, and reduce the production cost. In addition, since the LED chip 21 is a positive chip, the problem of the red light flip chip being difficult to realize can be effectively solved.

[0063] Please refer to Figures 2a-2g , wherein Figure 2a is Figure 1a a flowchart of a specific embodiment corresponding to S12 in Figures 2b-2g is Figure 2a a structural schematic diagram of an embodiment corresponding to S121-S123 in In an embodiment, the above S12 can further include the following steps:

[0064] S121: Forming a first encapsulation layer arranged in a dot shape on a temporary substrate.

[0065] Specifically, as shown in Figure 2b , at least one first encapsulation layer 221 arranged in a dot shape is formed on the provided temporary substrate 23 corresponding to the number of LED chips 21 to be packaged, for example, the first encapsulation layer 221 in a liquid or semi-solid state is dripped on the temporary substrate 23 corresponding to the packaging position of the LED chip 21.

[0066] S122: Pressing and embedding the LED chip corresponding to the side of the light emitting surface into the first encapsulation layer before the first encapsulation layer is completely cured, wherein the cross-sectional dimension of the first encapsulation layer gradually decreases in the direction from the light emitting surface to the back light surface.

[0067] Further, as shown in Figure 2c , the LED chip 21 is pressed and embedded into the first encapsulation layer 221 corresponding to the side of the light emitting surface 211 of the LED chip 21 before the first encapsulation layer 221 is completely cured.

[0068] The cross-sectional dimension of the first encapsulant layer 221 gradually decreases in the direction from the light-emitting surface 211 of the LED chip 21 to the backlight surface 212 of the LED chip 21.

[0069] Optionally, the outer surface of the first sealant layer 221 may be partially curved, trapezoidal, or any other reasonable shape, and this application does not limit this.

[0070] S123: A second encapsulating layer is formed on a temporary substrate, surrounding the LED chip and the first encapsulating layer, wherein the second encapsulating layer is used to reflect the light generated by the LED chip and transmitted within the first encapsulating layer.

[0071] Furthermore, such as Figure 2d As shown, after pressing the LED chip 21 into the first encapsulant layer 221, the LED chip 21 needs to be further encapsulated. For example, a second encapsulant layer 222 is formed on the temporary substrate 23, surrounding the LED chip 21 and the first encapsulant layer 221.

[0072] It is understandable that the LED chip 21 in this embodiment is compared to Figure 1a The difference in the first embodiment of the manufacturing method of the LED packaging module is that the encapsulation layer 22 is specifically composed of a first encapsulation layer 221 and a second encapsulation layer 222 that are made sequentially. The second encapsulation layer 222 is specifically used to reflect the light generated by the LED chip 21 and transmitted in the first encapsulation layer 221, so as to effectively improve the light output efficiency of the LED chip 21.

[0073] And such as Figure 2e , Figure 2f as well as Figure 2g As shown, Figure 2e , Figure 2f as well as Figure 2g Specifically, these can be cross-sectional views, top views, and bottom views of one of the LED packaging modules finally separated in this example, so that when the cross-sectional dimensions of the first encapsulant layer 221 gradually decrease in the direction from the light-emitting surface 211 of the LED chip 21 to the backlight surface 212 of the LED chip 21, the light extraction efficiency of the LED chip 21 can be effectively improved.

[0074] In another embodiment, steps S121-S123 may further include: first, placing the LED chip 21 on the temporary substrate 23, and then spraying a first encapsulant layer 221 around the LED chip 21. When the first encapsulant layer 221 overflows onto the side of the LED chip 21 facing away from the temporary substrate 23, the excess portion of the first encapsulant layer 221 can be removed by grinding or etching.

[0075] Further, in an embodiment, after S122 and before S123, the method further includes baking and curing the first encapsulation layer 221.

[0076] The present application also provides an LED packaging module, please refer to Figure 3 , Figure 3 is a structural schematic diagram of the first embodiment of the LED packaging module of the present application. In the embodiment, the LED packaging module 30 includes a metal substrate 31, an LED chip 32, an encapsulation layer 33, a first conductive pillar 341, a second conductive pillar 342, a first lead 351 and a second lead 352.

[0077] Specifically, the metal substrate 31 includes a first metal pattern 311 and a second metal pattern 312 which are electrically isolated from each other, and can be obtained by patterning a copper-clad plate, a copper plate or any other reasonable conductive metal plate.

[0078] The LED chip 32 is a normal chip, and specifically includes a light emitting surface (not labeled in the figure), a back surface opposite to the light emitting surface (not labeled in the figure), a first electrode 321 and a second electrode 322 disposed on the light emitting surface, and the LED chip 32 is attached to the metal substrate 31 on the side corresponding to the back surface thereof.

[0079] Further, the encapsulation layer 33 surrounds the periphery of the LED chip 32 and is attached to the metal substrate 31, and the encapsulation layer 33 further has a first through hole (not labeled in the figure) and a second through hole (not labeled in the figure) formed therein, and the first conductive pillar 341 and the second conductive pillar 342 are disposed in the first through hole and the second through hole, respectively, and are electrically connected to the first metal pattern 311 and the second metal pattern 312, respectively.

[0080] Still further, the first lead 351 and the second lead 352 are disposed on the side of the LED chip 32 and the encapsulation layer 33 corresponding to the light emitting surface, and are electrically connected to the first electrode 321 and the first conductive pillar 341 and the second electrode 322 and the second conductive pillar 342, respectively.

[0081] In an embodiment, the side of the encapsulation layer 33 corresponding to the light emitting surface of the LED chip 32 is flush with the first electrode 321 and the second electrode 322, and the first lead 351 and the second lead 352 are attached to the side of the LED chip 32 and the encapsulation layer 33 corresponding to the light emitting surface of the LED chip 32.

[0082] Optionally, the width of the first lead 351 and the second lead 352 is not greater than 30 microns, or not greater than 20 microns, or not greater than 10 microns, and is determined by the actual size of the LED packaging module 30, which is not limited in the present application.

[0083] Please refer to Figure 4 ,Figure 4 is a structural schematic diagram of a second embodiment of the LED packaging module provided in the present application. The embodiment is based on the first embodiment of the LED packaging module provided in the present application, and the encapsulation layer 43 in the LED packaging module 40 further comprises a first encapsulation layer 431 and a second encapsulation layer 432.

[0084] Specifically, the first encapsulation layer 431 is dot-shaped, and the light emitting surface of the LED chip 42 is embedded in the first encapsulation layer 431, and the cross-sectional size of the first encapsulation layer 431 gradually decreases in the direction from the light emitting surface to the back surface.

[0085] The second encapsulation layer 432 surrounds the periphery of the LED chip 42 and the first encapsulation layer 431, and is used to reflect the light generated by the LED chip 42 and transmitted in the first encapsulation layer 431, so as to effectively improve the light emitting efficiency of the LED chip 42.

[0086] The first through hole and the second through hole in which the first conductive column 441 and the second conductive column 442 are arranged are specifically formed in the second encapsulation layer 432.

[0087] It can be understood that in the present embodiment, the metal substrate 41, the first metal pattern 411, the second metal pattern 412, the LED chip 42, the first electrode 421, the second electrode 422, the first conductive column 441, the second conductive column 442, the first lead 451 and the second lead 452 are respectively the same as the metal substrate 31, the first metal pattern 311, the second metal pattern 312, the LED chip 32, the first electrode 321, the second electrode 322, the first conductive column 341, the second conductive column 342, the first lead 351 and the second lead 352, and details are described in the first embodiment of the LED packaging module provided in the present application and related text content, which will not be described here. Figure 3

[0088] ​The beneficial effects of the present application are: different from the prior art, the manufacturing method of the LED packaging module provided by the present application provides an LED specific chip including a light emitting surface, a back light surface arranged opposite to the light emitting surface, and a first electrode and a second electrode arranged on the light emitting surface, so that the LED chip can be fixed on a temporary substrate by using an encapsulation layer corresponding to one side of the light emitting surface, and after the LED chip and the encapsulation layer corresponding to one side of the back light surface are fixed on a metal substrate, the temporary substrate is removed, and the first through hole and the second through hole are formed corresponding to one side of the light emitting surface of the encapsulation layer, so that the first conductive column and the second conductive column are formed in the first through hole and the second through hole, and the first lead wire electrically connected with the first electrode and the first conductive column and the second lead wire electrically connected with the second electrode and the second conductive column are formed corresponding to one side of the light emitting surface of the LED chip and the encapsulation layer, so as to pattern the metal substrate, and then form the first metal pattern and the second metal pattern which are electrically isolated from each other, wherein the first conductive column is electrically connected with the first metal pattern, and the second conductive column is electrically connected with the second metal pattern, so as to effectively improve the light emitting efficiency of the LED chip, and by using the semiconductor process wiring to replace the conventional gold wire punching mode, the light and thin LED packaging module obtained can also be effectively realized; and there is no need to correspondingly arrange the bracket and the reflector of the conventional packaging, so as to effectively improve the photoelectric conversion efficiency, simplify the overall manufacturing process, improve the production efficiency, and reduce the production cost.

[0089] The above is only an embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for manufacturing an LED packaging module, characterized in that, The manufacturing method includes: providing an LED chip, the LED chip including a light-emitting surface, a backlight surface disposed opposite to the light-emitting surface, and a first electrode and a second electrode disposed on the light-emitting surface; The step of fixing the LED chip on the side corresponding to the light-emitting surface to the temporary substrate using an encapsulating layer includes: A first sealant layer, arranged in a dotted pattern, is formed on the temporary substrate; Before the first sealant layer is fully cured, the LED chip is pressed and embedded in the first sealant layer on the side corresponding to the light-emitting surface. The cross-sectional dimension of the first sealant layer gradually decreases from the light-emitting surface to the backlight surface. A second encapsulation layer is formed on the temporary substrate, surrounding the LED chip and the first encapsulation layer, wherein the second encapsulation layer is used to reflect the light generated by the LED chip and transmitted within the first encapsulation layer; The LED chip and the encapsulation layer are fixed to the metal substrate on the side corresponding to the backlight surface; Remove the temporary substrate; A first through hole and a second through hole are formed from the side of the sealant layer corresponding to the light-emitting surface; A first conductive post and a second conductive post are formed in the first through hole and the second through hole; A first lead electrically connecting the first electrode and the first conductive post, and a second lead electrically connecting the second electrode and the second conductive post are formed on the side of the LED chip and the encapsulation layer corresponding to the light-emitting surface; The metal substrate is patterned to form a first metal pattern and a second metal pattern that are electrically isolated from each other, wherein the first conductive post is electrically connected to the first metal pattern and the second conductive post is electrically connected to the second metal pattern.

2. The manufacturing method according to claim 1, characterized in that, Before the step of fixing the LED chip and the encapsulating layer on the side corresponding to the backlight surface onto the metal substrate, the method further includes: grinding or etching the side of the encapsulating layer corresponding to the backlight surface so that the side of the encapsulating layer corresponding to the backlight surface is flush with the backlight surface.

3. The manufacturing method according to claim 1, characterized in that, The step of fixing the LED chip and the encapsulating layer on the side corresponding to the backlight surface to the metal substrate includes: bonding and fixing the LED chip and the encapsulating layer on the side corresponding to the backlight surface to the metal substrate, or forming the metal substrate on the side corresponding to the backlight surface of the LED chip and the encapsulating layer.

4. The manufacturing method according to claim 1, characterized in that, Before the step of forming the first through hole and the second through hole from the side of the encapsulating layer corresponding to the light-emitting surface, the method further includes: grinding or etching the side of the encapsulating layer corresponding to the light-emitting surface so that the side of the encapsulating layer corresponding to the light-emitting surface is flush with the first electrode and the second electrode.

5. The manufacturing method according to claim 4, characterized in that, The step of forming a first lead electrically connecting the first electrode and the first conductive post and a second lead electrically connecting the second electrode and the second conductive post on the side of the LED chip and the encapsulation layer corresponding to the light-emitting surface includes: forming the first lead and the second lead using magnetron sputtering or electroplating etching, wherein the width of the first lead and the second lead is not greater than 30 micrometers.

6. The manufacturing method according to claim 1, characterized in that, The manufacturing method further includes attaching a fluorescent film or a quantum dot film to the side of the LED chip and the encapsulation layer corresponding to the light-emitting surface.

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