An orange-yellow light LED device and its preparation method and application

Abstract

The present invention relates to an orange-yellow LED device, its preparation method, and application. The orange-yellow LED device comprises: a substrate, an atomic layer deposition layer of nickel oxide doped with lithium oxide deposited on the substrate surface, and an atomic layer deposition layer of zinc oxide deposited on the surface of the nickel oxide atomic layer deposition layer. Compared to methods for preparing orange-yellow LED devices using organic fluorescent materials, the present invention prepares a p-type atomic layer deposition layer of nickel oxide doped with lithium oxide and an n-type atomic layer deposition layer of zinc oxide on the substrate surface to obtain an orange-yellow LED device. This method is simple, has minimal environmental pollution, and uses relatively inexpensive raw materials, which can reduce production costs. The resulting orange-yellow LED device is made of inorganic semiconductor materials and is not easily aged, resulting in good luminous stability. Furthermore, the orange-yellow LED device has a higher color rendering index and lower toxicity.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductors, and in particular relates to an orange-yellow light emitting diode (LED) device, a preparation method thereof, and an application thereof. Background Art

[0002] Currently, most white light lighting devices on the market are composed of a combination of blue LEDs and yellow organic phosphors, with a relatively low color rendering index of only around 70. Organic phosphors are also less stable and easily deteriorate over time, causing the LED color to change and the color rendering index to decrease. At the same time, organic phosphors generally require rare earth elements, and the mining of rare earth elements is very damaging to the environment. The production process of organic phosphors produces a large amount of toxic and harmful substances, which damage the environment. Organic phosphors themselves are also toxic, not only endangering the human body during use, but also easily polluting the environment after being scrapped.

[0003] Nickel oxide (NiO) is an important photoelectric functional thin film material. In recent years, it has been widely used in the fields of magnetic spin valve multilayer films, electrochromic glass, gas sensors, ultraviolet detectors, etc. Nickel oxide (NiO) material is a very important anode electrochromic material. Its crystal structure is a sodium chloride (NaCl) type face-centered cubic structure. The lattice constant of NiO is The single crystal density is 6.67g / cm 3 . During the preparation process, excess oxygen often occurs, resulting in a deviation from the stoichiometric ratio and the generation of a large number of nickel vacancies. Compared with conventional p-type conductive films that are not easy to form stably at room temperature, NiO material is a wide-bandgap oxide semiconductor that can form stable conductivity at room temperature. NiO materials can be prepared using physical and chemical methods such as magnetron sputtering, spray thermal decomposition, sol-gel method, pulsed laser deposition (PLD), and chemical vapor deposition (CVD). At present, it is difficult to prepare p-type NiO materials with conductive properties by atomic layer deposition (ALD), and p-type materials with good conductivity are essential materials for the preparation of high-quality LED devices. Therefore, it is imperative to develop a high-quality conductive p-type NiO material using atomic layer deposition. Summary of the Invention

[0004] In response to the problems existing in existing yellow organic phosphors, the present invention provides an orange-yellow light LED device made of an inorganic semiconductor material, as well as its preparation method and application. The orange-yellow light LED device made of the inorganic semiconductor material has excellent stability. The color rendering index of the white light LED made by combining with a blue light LED can reach above 86, and can be used in backlight products.

[0005] The technical solutions provided by the present invention are as follows:

[0006] In a first aspect, the present invention provides an orange-yellow LED device, comprising:

[0007] substrate;

[0008] an atomic layer deposition layer of nickel oxide doped with lithium oxide, deposited on the substrate surface; and

[0009] A zinc oxide atomic layer deposition layer is deposited on the surface of the nickel oxide atomic layer deposition layer doped with lithium oxide.

[0010] In some embodiments provided by the present invention, the zinc atomic layer deposition layer is deposited on the side of the nickel oxide atomic layer deposition layer doped with lithium oxide away from the substrate.

[0011] In some embodiments provided by the present invention, in the nickel oxide atomic layer deposition layer doped with lithium oxide, the atomic ratio of lithium to nickel is 1:15 to 25. By precisely controlling the proportion of lithium oxide in the nickel oxide atomic layer deposition layer, an orange-yellow LED device with a specific wavelength can be obtained.

[0012] In a second aspect, the present invention provides a method for preparing the above-mentioned orange-yellow LED device, comprising:

[0013] providing a substrate;

[0014] preparing an atomic layer deposition layer of nickel oxide doped with lithium oxide on the surface of a substrate;

[0015] An atomic layer deposition layer of zinc oxide is prepared on the surface of an atomic layer deposition layer of nickel oxide doped with lithium oxide to obtain an orange-yellow light emitting diode (LED) device.

[0016] In some embodiments provided herein, preparing an atomic layer deposition layer of nickel oxide doped with lithium oxide on a substrate surface comprises:

[0017] S1: placing the substrate in a reaction chamber and heating it to the reaction temperature;

[0018] S2: alternately feeding a nickel precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, repeating several cycles; alternately feeding a lithium precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, performing one cycle;

[0019] S3: Repeat step S2 several times to obtain a nickel oxide atomic layer deposition layer doped with lithium oxide of a certain thickness.

[0020] In some embodiments provided by the present invention, the reaction temperature is 200-500°C.

[0021] In some embodiments provided by the present invention, the nickel precursor is nickelocene, and the oxygen precursor is a gas containing at least one of ozone, oxygen plasma, and water.

[0022] In some embodiments provided herein, the lithium precursor is lithium tert-butoxide.

[0023] In some embodiments provided by the present invention, the growth rate of the nickel oxide atomic layer deposition layer doped with lithium oxide is 0.01-0.05 nm / cycle.

[0024] In a third aspect, the present invention provides applications of the above-mentioned orange-yellow LED device in the optoelectronic field.

[0025] Compared with the method of preparing orange-yellow light LED devices using organic fluorescent materials, the present invention obtains an orange-yellow light-emitting LED device by preparing a p-type layer (a nickel oxide atomic layer deposition layer doped with lithium oxide) and an n-type layer (a zinc oxide atomic layer deposition layer) on the surface of a substrate. The preparation method is simple, has little pollution to the environment, and the raw materials used are relatively cheap, which can reduce production costs. The obtained orange-yellow light LED device is made of inorganic semiconductor materials and is not easy to age, so the device has good luminous stability. In addition, the orange-yellow light LED device has a higher color rendering index and low toxicity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is the electroluminescence spectrum of the LED device prepared in Example 1 of the present invention.

[0027] Figure 2 This is the CIE coordinate diagram of the electroluminescence of the LED device prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0028] The following is a clear and complete description of the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0029] In a first aspect, the present invention provides an orange-yellow LED device, comprising:

[0030] substrate;

[0031] an atomic layer deposition layer of nickel oxide doped with lithium oxide, deposited on the substrate surface; and

[0032] A zinc oxide atomic layer deposition layer is deposited on a side of the nickel oxide atomic layer deposition layer away from the substrate.

[0033] The present invention provides an orange-yellow light emitting diode (LED) device, which uses an atomic layer deposition layer of nickel oxide doped with lithium oxide, which has the characteristic of shape preservation and can be grown on a substrate of any shape and size. The orange-yellow light emitting diode (LED) device is made of inorganic semiconductor materials and is not easily aged, so the device has good luminous stability. The orange-yellow light emitting diode (LED) device also has a higher color rendering index and low toxicity.

[0034] As a preferred embodiment of the above technical solution, in the nickel oxide atomic layer deposited layer doped with lithium oxide, the atomic ratio of lithium to nickel is 1:15 to 25. Exceeding this atomic ratio range will cause the material's conductivity to drop sharply, leading to the disappearance of luminescence. Furthermore, the atomic ratio of lithium to nickel is 1:18 to 22, and further, the atomic ratio of lithium to nickel is 1:20.

[0035] In a second aspect, the present invention provides a method for preparing an orange-yellow LED device, comprising:

[0036] providing a substrate;

[0037] preparing an atomic layer deposition layer of nickel oxide doped with lithium oxide on the surface of a substrate;

[0038] An atomic layer deposition layer of zinc oxide is prepared on the surface of an atomic layer deposition layer of nickel oxide doped with lithium oxide to obtain an orange-yellow light emitting diode (LED) device.

[0039] The method for preparing an orange-yellow light LED device provided by the present invention adopts the atomic layer deposition method, and the material grows spontaneously and restrictively layer by layer. The thickness of the atomic layer deposition layer can be precisely controlled by controlling the number of reaction cycles.

[0040] In some embodiments of the present invention, preparing an atomic layer deposition layer of nickel oxide doped with lithium oxide on a substrate surface includes:

[0041] S1: placing the substrate in a reaction chamber and heating it to the reaction temperature;

[0042] S2: alternately feeding a nickel precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, repeating several cycles; alternately feeding a lithium precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, performing one cycle;

[0043] S3: Repeat step S2 several times to obtain a nickel oxide atomic layer deposition layer doped with lithium oxide of a certain thickness.

[0044] The present invention alternately introduces a nickel precursor and an oxygen precursor to the surface of a heated substrate. The process includes physical adsorption and chemical adsorption. The temperature has a certain inhibitory effect on the physical adsorption of the precursor on the substrate surface. After the substrate surface is saturated with adsorption, the chemical adsorption process automatically terminates. During the chemical adsorption process, specific groups in the nickel precursor and the oxygen precursor react with each other, while the same precursors do not react. Precursors are introduced into the reaction chamber at different times. After the latter precursor completely reacts with the specific groups left by the former precursor, another precursor is introduced. Otherwise, the same precursor cannot continue to react and the thickness will no longer increase. After the nickel precursor and the oxygen precursor are alternately introduced into the reaction chamber in the form of gas pulses and repeated for several cycles, a cycle of alternating deposition of lithium precursors and oxygen precursors is performed to obtain a nickel oxide atomic layer deposition layer doped with lithium oxide.

[0045] In some embodiments of the present invention, alternately feeding the nickel precursor and the oxygen precursor into the reaction chamber in the form of gas pulses comprises:

[0046] introducing a gaseous nickel precursor into the reaction chamber to obtain a nickel atomic layer deposition layer, and purging the nickel atomic layer deposition layer;

[0047] A gaseous oxygen precursor is introduced into the reaction chamber to perform a monoatom reaction with the nickel atomic layer deposition layer to obtain a nickel oxide atomic layer deposition layer, and the nickel oxide atomic layer deposition layer is purged.

[0048] In some embodiments of the present invention, alternately feeding the lithium precursor and the oxygen precursor into the reaction chamber in the form of gas pulses comprises:

[0049] introducing a gaseous lithium precursor into the reaction chamber to obtain a lithium atomic layer deposition layer, and purging the lithium atomic layer deposition layer;

[0050] A gaseous oxygen precursor is introduced into the reaction chamber to react with the lithium atomic layer deposition layer to form a lithium oxide atomic layer deposition layer, and the lithium oxide atomic layer deposition layer is purged.

[0051] In some embodiments of the present invention, the reaction temperature is 200-500° C. As previously mentioned, the reaction temperature has a certain inhibitory effect on the physical adsorption of molecules on the substrate surface. In the present invention, the reaction temperature is controlled to be 200-500° C. to achieve the purpose of controlling the growth rate of the nickel oxide atomic layer deposition layer.

[0052] In some embodiments of the present invention, the nickel precursor is bis(cyclopentadienyl)nickel ((C5H5)2Ni, NiCp2). Preferably, the nickelocene is introduced into the reaction chamber for 100-1000 ms in one cycle, and the purge time is 3-20 s.

[0053] In some embodiments of the present invention, the lithium precursor is lithium tert-butoxide. Preferably, the time for introducing the gaseous lithium precursor into the reaction chamber is 100-1000 ms, and the purge time is 3-20 s.

[0054] In some embodiments of the present invention, the gaseous oxygen precursor is a gas comprising at least one of ozone, H2O, and oxygen plasma, preferably ozone. H2O and oxygen plasma have lower oxidizing effects than ozone. The present invention utilizes 99.9% or higher pure oxygen to generate ozone using an ozone generator, which is directly introduced into the reaction chamber. Preferably, the ozone generator has a power of 50-90%. In a single cycle, the gaseous oxygen precursor is introduced into the reaction chamber for 1-10 seconds, and the purge time is 5-20 seconds.

[0055] In some embodiments of the present invention, the thickness of the nickel oxide atomic layer deposition layer is 100 to 400 nm. The thickness has little effect on the luminescence stability of the device, and the color change is not obvious at the beginning, but the luminescence intensity decreases when the thickness reaches about 400 nm.

[0056] In some embodiments of the present invention, the thickness of the ZnO atomic layer deposition layer is 100-400 nm.

[0057] In some embodiments of the present invention, the growth rate of the nickel oxide atomic layer deposition layer is 0.03 nm / cycle.

[0058] In some embodiments of the present invention, the provided substrate is quartz glass with indium-doped tin oxide on the surface.

[0059] In some embodiments of the present invention, before preparing the nickel oxide atomic layer deposition layer on the substrate surface, the substrate is subjected to a decontamination pretreatment, and the decontamination pretreatment includes: performing water bath ultrasonication using acetone, anhydrous ethanol, and deionized water as cleaning agents in sequence.

[0060] In some embodiments of the present invention, preparing a zinc oxide atomic layer deposition layer on a surface of a nickel oxide atomic layer deposition layer comprises:

[0061] Zinc precursor and oxygen precursor are alternately fed into the reaction chamber in the form of gas pulses, and repeated for several cycles to obtain a nickel oxide atomic layer deposition layer of a certain thickness.

[0062] In some embodiments of the present invention, the zinc precursor is diethylzinc (DEZn), the oxygen precursor uses a gas containing at least one of ozone, H2O, and oxygen plasma, and the oxygen precursor is introduced into the reaction chamber for 100-20000 ms in one cycle.

[0063] In some embodiments of the present invention, the zinc precursor and the oxygen precursor are alternately introduced into the reaction chamber in the form of gas pulses, comprising:

[0064] introducing a vapor-phase zinc precursor into the reaction chamber to obtain a zinc atomic layer deposition layer, and purging the zinc atomic layer deposition layer;

[0065] A gaseous oxygen precursor is introduced into the reaction chamber to perform a monoatom reaction with the zinc atomic layer deposition layer to obtain a zinc oxide atomic layer deposition layer, and the zinc oxide atomic layer deposition layer is purged.

[0066] In some embodiments of the present invention, the purge time after each deposition is 5-20 seconds.

[0067] In some embodiments of the present invention, an inert gas purge is used during the atomic deposition process, and the inert gas is preferably nitrogen.

[0068] In some embodiments of the present invention, the method for preparing an orange-yellow light LED device provided by the present invention further includes: using Ar plasma to etch a specific portion of the film to prepare an electrode, the Ar plasma gas flow rate is: 10-200sccm, the power is 300-600w, and the etching time is 10-120min.

[0069] In a third aspect, the present invention provides applications of orange-yellow LED devices in the optoelectronic field. For example, the orange-yellow LED device can be combined with a blue LED to form a white light LED for use in backlight products.

[0070] The technical solution of the present invention is further described in detail below with reference to the embodiments and drawings, but the embodiments of the present invention are not limited thereto.

[0071] Example 1

[0072] The method for preparing an orange-yellow LED device provided in this embodiment includes the following steps:

[0073] (1) A quartz glass substrate with indium-doped tin oxide on its surface (ITO conductive glass) was ultrasonicated in acetone, anhydrous ethanol, and deionized water baths for 5 min in sequence.

[0074] (2) Place the ITO conductive glass treated in step (1) in a reaction chamber and heat the reaction chamber to 350°C.

[0075] (3) A nickel precursor (nickelocene (NiCp2)) and an oxygen precursor (O3) were introduced into the reaction chamber in an alternating pulsed manner for 367 cycles, resulting in a nickel oxide atomic layer deposition layer with a thickness of approximately 100 nm. The growth rate of the nickel oxide atomic layer deposition layer was 0.03 nm / cycle. In each reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the nickel precursor and introduced into the reaction chamber for 200 ms. The nitrogen was then purged for 15 s, followed by the introduction of the oxygen precursor for 5 s, and finally by a nitrogen purge for 15 s.

[0076] (4) A lithium precursor (lithium tert-butoxide (C4H9LiO)) and an oxygen precursor (O3) were introduced into the reaction chamber in an alternating pulsed manner for one cycle, so that the atomic ratio of lithium to nickel was approximately 1:20, and a lithium oxide-doped nickel oxide film was obtained with a carrier concentration of 3×10 17 cm -3 In each reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the lithium precursor. The lithium precursor was introduced for 200 ms, followed by a nitrogen purge for 15 s, followed by an oxygen precursor for 5 s, and finally a nitrogen purge for 15 s.

[0077] (5) A zinc precursor (diethyl zinc) and an oxygen precursor (vapor-phase water) were introduced into the reaction chamber in alternating pulses: In one reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the zinc precursor. The zinc precursor was first introduced for 200 ms, then nitrogen was purged for 15 s, followed by the introduction of the oxygen precursor for 5 s, and finally nitrogen was purged for 15 s. This cycle was repeated 367 times to obtain a zinc oxide atomic layer deposition layer with a thickness of approximately 100 nm.

[0078] (6) Reactive ion etching (RIE) was used to etch away the nickel oxide film in a specific area using Ar plasma gas, exposing the bottom electrode and obtaining an LED device. During the Ar plasma etching process, the Ar plasma gas flow rate was 100 sccm, the power of the Ar plasma etcher was 300 W, and the etching time was 100 min. A gold electrode was deposited using thermal evaporation. During the deposition process, the current was 150 A, the gold electrode thickness was controlled to 60 nm, and the gold electrode deposition rate was controlled to 0.2 nm / s.

[0079] Performance testing:

[0080] (1) LED device stability test:

[0081] The electric field current of the LED device was tested every ten days, and there was almost no change in the electric field current after 3-4 tests.

[0082] (2) LED device life test:

[0083] A stable electric field current was applied to the LED device and the decay of the electric field current was observed within 24 hours. The results showed that the electric field current had almost no decay.

[0084] (3) Electroluminescence test:

[0085] The LED device was tested for electroluminescence, and it was found that the LED device emitted orange-yellow light. Its electroluminescence spectrum is as follows: Figure 1 shown.

[0086] Example 2

[0087] The method for preparing an orange-yellow LED device provided in this embodiment includes the following steps:

[0088] (1) A quartz glass substrate with indium-doped tin oxide on its surface (ITO conductive glass) was ultrasonicated in acetone, anhydrous ethanol, and deionized water baths for 5 min in sequence.

[0089] (2) Place the ITO conductive glass treated in step (1) in a reaction chamber and heat the reaction chamber to 350°C.

[0090] (3) A nickel precursor (nickelocene (NiCp2)) and an oxygen precursor (O3) were introduced into the reaction chamber in an alternating pulsed manner for 367 cycles, resulting in a nickel oxide atomic layer deposition layer with a thickness of approximately 100 nm. The growth rate of the nickel oxide atomic layer deposition layer was 0.03 nm / cycle. In each reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the nickel precursor and introduced into the reaction chamber for 200 ms. The nitrogen was then purged for 15 s, followed by the introduction of the oxygen precursor for 5 s, and finally by a nitrogen purge for 15 s.

[0091] (4) A lithium precursor (lithium tert-butoxide (C4H9LiO)) and an oxygen precursor (O3) were introduced into the reaction chamber in an alternating pulsed manner for one cycle, so that the atomic ratio of lithium to nickel was approximately 1:20, and a lithium oxide-doped nickel oxide film was obtained. After annealing, the carrier concentration of the lithium oxide-doped nickel oxide film was measured to be 1×10 18 cm -3 In each reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the lithium precursor. The lithium precursor was introduced for 200 ms, followed by a nitrogen purge for 15 s, followed by an oxygen precursor for 5 s, and finally a nitrogen purge for 15 s.

[0092] (5) A zinc precursor (diethyl zinc) and an oxygen precursor (vapor-phase water) were introduced into the reaction chamber in alternating pulses: In one reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the zinc precursor. The zinc precursor was first introduced for 200 ms, then nitrogen was purged for 15 s, followed by the introduction of the oxygen precursor for 5 s, and finally nitrogen was purged for 15 s. This cycle was repeated 367 times to obtain a zinc oxide atomic layer deposition layer with a thickness of approximately 100 nm.

[0093] Comparative Example

[0094] Compared with Example 1, the method for preparing an orange-yellow LED device provided in this comparative example does not include alternately pulse-feeding a lithium precursor (lithium tert-butoxide (C4H9LiO)) and an oxygen precursor (O3) into the reaction chamber. The specific steps are as follows:

[0095] (1) A quartz glass substrate with indium-doped tin oxide on its surface (ITO conductive glass) was ultrasonicated in acetone, anhydrous ethanol, and deionized water baths for 5 min in sequence.

[0096] (2) Place the ITO conductive glass treated in step (1) in a reaction chamber and heat the reaction chamber to 350°C.

[0097] (3) A nickel precursor (nickelocene (NiCp2)) and an oxygen precursor (O3) were introduced into the reaction chamber in an alternating pulsed manner: in one reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the nickel precursor and introduced into the reaction chamber for 200 ms, followed by nitrogen purge for 15 s, followed by introduction of the oxygen precursor for 5 s, and finally nitrogen purge for 15 s; 367 cycles were repeated to obtain a nickel oxide atomic layer deposition layer with a thickness of about 100 nm, and the growth rate of the nickel oxide atomic layer deposition layer was 0.03 nm / cycle.

[0098] (4) A zinc precursor (diethyl zinc) and an oxygen precursor (vapor-phase water) were introduced into the reaction chamber in alternating pulses: In one reaction cycle, high-purity nitrogen (99.9%) with a gas flow rate of 100 sccm was used as the carrier gas for the zinc precursor. The zinc precursor was first introduced for 200 ms, followed by a nitrogen purge for 15 s, followed by an oxygen precursor introduction for 5 s, and finally a nitrogen purge for 15 s. This cycle was repeated 367 times to obtain a zinc oxide atomic layer deposition layer with a thickness of approximately 100 nm.

[0099] (5) Reactive ion etching (RIE) was used to etch away the nickel oxide film in a specific area using Ar plasma gas, exposing the bottom electrode and obtaining an LED device. During the Ar plasma etching process, the Ar plasma gas flow rate was 100 sccm, the power of the Ar plasma etcher was 300 W, and the etching time was 100 min. A gold electrode was deposited using thermal evaporation. During the deposition process, the current was 150 A, the gold electrode thickness was controlled to 60 nm, and the gold electrode deposition rate was controlled to 0.2 nm / s.

[0100] Electroluminescence test:

[0101] The electroluminescence test of the LED device did not detect the spectrum corresponding to the orange-yellow light emitted by the LED device.

[0102] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An orange-yellow LED device, characterized in that: include: substrate; The substrate is quartz glass with indium-doped tin oxide on the surface; an atomic layer deposition layer of nickel oxide doped with lithium oxide, deposited on the substrate surface; wherein the ratio of the number of lithium atoms to the number of nickel atoms is 1:15 to 25; and A zinc oxide atomic layer deposition layer is deposited on the surface of the nickel oxide atomic layer deposition layer doped with lithium oxide.

2. A method for preparing the orange-yellow LED device according to claim 1, characterized in that: include: providing a substrate; preparing an atomic layer deposition layer of nickel oxide doped with lithium oxide on the surface of a substrate; An atomic layer deposition layer of zinc oxide is prepared on the surface of an atomic layer deposition layer of nickel oxide doped with lithium oxide to obtain an orange-yellow light emitting diode (LED) device.

3. The method for preparing an orange-yellow LED device according to claim 2, wherein: The step of preparing a nickel oxide atomic layer deposition layer doped with lithium oxide on the substrate surface comprises: S1: placing the substrate in a reaction chamber and heating it to the reaction temperature; S2: alternately feeding a nickel precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, repeating several cycles; alternately feeding a lithium precursor and an oxygen precursor into the reaction chamber in the form of gas pulses, performing one cycle; S3: Repeat step S2 several times to obtain a nickel oxide atomic layer deposition layer doped with lithium oxide of a certain thickness.

4. The method for preparing an orange-yellow LED device according to claim 3, wherein: The reaction temperature is 200-500°C.

5. The method for preparing an orange-yellow LED device according to claim 3, wherein: The nickel precursor is nickelocene.

6. The method for preparing an orange-yellow LED device according to claim 3, wherein: The lithium precursor is lithium tert-butoxide.

7. The method for preparing an orange-yellow LED device according to claim 3, wherein: The oxygen precursor is a gas containing at least one of ozone, oxygen plasma, and water.

8. The method for preparing an orange-yellow LED device according to claim 2, wherein: The growth rate of the nickel oxide atomic layer deposition layer doped with lithium oxide is 0.01-0.05 nm / cycle.

9. Application of the orange-yellow LED device according to claim 1 in the field of optoelectronics.

Images