Micro Light-Emitting Diode Manufacturing Device

Abstract

The present invention relates to a micro light-emitting diode manufacturing apparatus that transfers a micro light-emitting diode chip of a wafer to a substrate by irradiating a laser, and includes: a wafer stage that disposes the wafer; a substrate stage that disposes the substrate; a lower machine base that is formed below the substrate stage; a first driving component that is formed on the substrate stage to move the wafer stage; and a second driving component that is formed on the lower machine base to move the substrate stage. Moreover, a structure is formed such that the wafer stage can move above the substrate stage, so that the substrate stage and the wafer stage can move simultaneously integrally with reference to the lower machine base.

Description

Technical Field

[0001] The present invention relates to a micro light emitting diode manufacturing apparatus, and more particularly, to a micro light emitting diode manufacturing apparatus having a structure in which a wafer stage and a substrate stage constituting the micro light emitting diode manufacturing apparatus can be integrally moved according to an operation state. Background Art

[0002] As the use of indicator lights for electronic devices, digitizers for computers, backlights for LED TVs, and various lighting devices increases, the demand for light emitting diodes is also gradually increasing.

[0003] A light emitting diode injects holes and electrons by applying a forward voltage (N-type is positive and P-type is negative) to a P-N junction diode, and emits light by releasing energy through recombination of holes and electrons. It is also called an LED (Light Emitting Diode). It has high efficiency, a long lifespan, and can significantly save maintenance costs for power consumption. Therefore, it has attracted much attention in the application field of new generation lighting devices.

[0004] Generally, when manufacturing LEDs, group III-V compound semiconductors such as gallium nitride (GaN), gallium phosphide (GaP), and gallium arsenide (GaAs) are used. Group III-V compound semiconductors have excellent metal stability and a direct transition type band structure. Therefore, they have recently become popular as materials for light emitting elements in the visible light and ultraviolet light fields.

[0005] Recently, many studies on LEDs have been conducted globally and have become hot news. Moreover, not only the existing large area display lamp elements at the cm level, but the LED chip technology being developed has reached the micron level LED chip with a light emitting area within 100μm×100μm. 2 However, since the size of the developed micro light emitting diode chips is too small, in order to directly use the developed micro light emitting diode chips, a transfer technology that can directly transfer the elements onto the substrate at the application stage is particularly important.

[0006] To apply the micro light emitting diode chips as a lattice (cell) of a light source, the most necessary technology is the technology of transferring the micro light emitting diode chips onto a transparent glass substrate used as a display element.

[0007] Currently, in order to transfer the micro light emitting diode chips onto the transparent glass substrate with high reliability and quickly, first, a micro light emitting diode structure is grown on a wafer substrate, and then the LED structure is transferred onto the glass substrate using a laser lift-off (LLO) technology.

[0008] ​

[0009] This transfer technology needs to be carried out while maintaining the interval between the wafer substrate and the glass substrate below 100 microns. Therefore, during the individual movement of the wafer substrate and the glass substrate, minute errors occur, and there are problems of defects due to mutual contact and other reasons. Summary of the Invention

[0010] Technical Problem to be Solved by the Invention

[0011] The object of the present invention is to provide a micro light-emitting diode manufacturing apparatus, which is formed with a structure capable of minimizing the change in the interval between the wafer substrate and the glass substrate that occurs during the movement of the wafer substrate and the glass substrate during the transfer of the micro light-emitting diode chip.

[0012] Technical Solution for Solving the Problem

[0013] The present invention provides a micro light-emitting diode manufacturing apparatus, which is a micro light-emitting diode manufacturing apparatus that irradiates a laser to transfer a micro light-emitting diode chip of a wafer to a substrate, and includes: a wafer stage on which the wafer is disposed; a substrate stage on which the substrate is disposed; a lower stage formed below the substrate stage; a first driving member formed on the substrate stage to move the wafer stage; and a second driving member formed on the lower stage to move the substrate stage, and a structure is formed such that the wafer stage can move above the substrate stage, so that the substrate stage and the wafer stage can move integrally and simultaneously with the lower stage as a reference.

[0014] The wafer stage includes: a lower wafer stage plate that moves in a first direction by the first driving member; an upper wafer stage plate that moves in a second direction different from the first direction by a third driving member formed on the lower wafer stage plate; and a wafer adsorption portion formed below the periphery of a central hole formed in the upper wafer stage plate.

[0015] The substrate stage includes: a lower substrate stage plate that moves in a third direction by the second driving member; a middle substrate stage plate that moves in a fourth direction different from the third direction by a fourth driving member formed on the lower substrate stage plate; and an upper substrate stage plate that is formed so as to be able to move up and down from above the middle substrate stage plate.

[0016] First lifting portions are formed at three positions between the middle substrate stage plate and the upper substrate stage plate. The first lifting portion includes: a spherical housing portion formed on the lower surface of the upper substrate stage plate, with a hollow spherical space inside; a cylinder portion formed with a sphere introduced into the spherical housing portion; and a hinge member formed at the lower portion of the cylinder portion.

[0017] A first speed sensor for grasping the moving speed of the lower plate of the substrate stage is formed on the lower plate of the substrate stage, and a first detection component is formed at a position of the lower machine base opposite to the first speed sensor.

[0018] On the upper surface of the lower machine base, a first guiding component and a second guiding component are oppositely formed with a cross-section in a character shape. One end of the lower plate of the substrate stage is introduced into the first guiding component, and the other end of the lower plate of the substrate stage is introduced into the second guiding component.

[0019] A first horizontal detection sensor and a second horizontal detection sensor for emitting ultrasonic waves to the lower plate of the wafer stage to determine whether the lower plate of the wafer stage is horizontal are formed on the upper plate of the substrate stage.

[0020] In order to detect foreign matters, a light generating part formed on one side of the glass substrate and a light receiving part formed on the other side of the glass substrate for receiving the light irradiated from the light generating part are formed on the upper plate of the substrate stage.

[0021] A first distance measurement sensor and a second distance measurement sensor for measuring whether the interval between the wafer adsorption part and the glass substrate is uniform are formed in the wafer adsorption part.

[0022] A second driving component, i.e., a first linear motor part, is formed on the lower machine base, and a first moving block for receiving the power of the first linear motor part and moving is formed on the lower plate of the substrate stage.

[0023] A second lifting part is formed at the lower part around the wafer central hole of the upper plate of the wafer stage, and a wafer adsorption part is formed at the lower part of the second lifting part.

[0024] A guiding wire is formed on one side of the second driving component of the lower machine base, and a loop for wrapping the guiding wire is formed on the lower plate of the substrate stage.

[0025] Effects of the Invention

[0026] The present invention has the following effects: a structure in which a movable substrate stage is formed on the upper part of the lower machine base, a structure in which a movable wafer stage is formed on the upper part of the substrate stage, and a structure in which the substrate stage and the wafer stage can move integrally based on the lower machine base, and a structure in which only the wafer stage can move on the upper part of the substrate stage while the substrate stage is fixed based on the lower machine base.

[0027] Accordingly, the present invention has the following effects: A structure is formed in which a movable wafer stage is formed on the upper part of the substrate stage, and with respect to the lower machine base, the substrate stage and the wafer stage can be moved integrally and simultaneously. Therefore, a structure in which a movable substrate stage is formed on the upper part of the lower machine base, and a structure in which a movable wafer stage is formed on the upper machine base, so that the problem of being unable to uniformly maintain the gap when the substrate stage and the wafer stage are moved simultaneously can be solved.

[0028] Moreover, the present invention has the following effects: A structure is formed in which a movable wafer stage is formed on the upper part of the substrate stage. Therefore, when the wafer stage moves on the upper part of the substrate stage, it is possible to easily maintain the gap between the micro light-emitting diode chip and the glass substrate part. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic side view showing an important part of the micro light-emitting diode manufacturing apparatus of the present invention;

[0030] Figure 2 A schematic front view showing a wafer;

[0031] Figure 3 A first conceptual diagram showing the process of transferring a micro light-emitting diode chip;

[0032] Figure 4 A second conceptual diagram showing the process of transferring a micro light-emitting diode chip;

[0033] Figure 5 A schematic perspective view showing a part of the micro light-emitting diode manufacturing apparatus of the present invention;

[0034] Figure 6 For showing Figure 5 A schematic perspective view of the state in which the upper machine base is omitted;

[0035] Figure 7 For showing Figure 6 A schematic perspective view of the state in which a lower plate of the substrate stage is formed on the lower machine base;

[0036] Figure 8 For showing on Figure 7 A schematic perspective view of the state in which a middle plate of the substrate stage and an upper plate of the substrate stage are formed on the upper surface of the lower plate of the substrate stage;

[0037] Figure 9 (a) of Figure 9 A schematic perspective view of the state in which the upper plate of the substrate stage is lifted by the first lifting part;

[0038] Figure 10 For showing in Figure 8Schematic perspective view of the state where the lower plate of the wafer stage is formed on the upper surface of the upper plate of the substrate stage;

[0039] Figure 11 To show in Figure 10 Schematic perspective view of the state where the upper plate of the wafer stage is formed on the upper surface of the lower plate of the wafer stage;

[0040] Figure 12 Schematic cross-sectional view of the A - A' part of the upper plate of the wafer stage described above;

[0041] Figure 13 To show Figure 11 Schematic partial perspective view of a modified example of;

[0042] Figure 14 For Figure 13 Schematic view of the side around the central hole of the 3 - 1 wafer. Detailed implementation manners

[0043] Hereinafter, the advantages, features, and methods for achieving them of the present invention will be made clear with reference to the accompanying drawings and the embodiments described in detail. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various different forms. It is only for providing a complete disclosure of the scope of the invention to those of ordinary skill in the technical field of the present invention, and the present invention is only defined by the scope of the claims. Also, when it is judged that the related prior art may confuse the gist of the present invention during the description of the present invention, the detailed description thereof will be omitted.

[0044] Figure 1 Schematic side view showing an important part of the micro light - emitting diode manufacturing apparatus of the present invention; Figure 2 Schematic front view showing a wafer.

[0045] The micro light - emitting diode manufacturing apparatus 100 of the present invention includes: a laser light source unit 120 that irradiates laser; a wafer unit 140 that is located below the laser light source unit 120 to receive the laser irradiated from the laser light source unit 120; and a glass substrate unit 160 that is located below the wafer unit 140 such that the micro light - emitting diode chips 154 of the wafer unit 140 are transferred.

[0046] The laser light source unit 120 includes: a laser light source 122 that generates laser; a lens barrel unit 124 that allows the laser emitted from the laser light source 122 to pass through; a mask unit 126 that allows only a part of the laser to pass through in the middle of the lens barrel unit 124; and a scanner unit 128 that irradiates the laser passing through the mask unit 126 onto the wafer unit 140.

[0047] The laser emitted from the laser light source 122 can be various types of lasers such as excimer lasers and DPSS lasers according to the bandgap energy. In this embodiment, the laser irradiation module can use an excimer laser with a wavelength of 157 nm to 350 nm. And preferably, the wavelength of the laser output from the laser irradiation module is in the ultraviolet wavelength region.

[0048] The mask portion 126 allows only a part of the laser to pass through, and its function is to enable only specific micro light-emitting diode chips 154 to be transferred on the wafer portion 140.

[0049] The scanner portion 128 functions to adjust the path so that the laser passing through the mask portion 126 irradiates a specific area of the wafer portion 140.

[0050] The wafer portion 140 includes: a wafer stage 142 having a laser transmission portion 152-1 through which the laser passes formed in the center; a wafer 152 vacuum-adsorbed below the wafer stage 142; and micro light-emitting diode chips 154 formed below the wafer 152.

[0051] The wafer 152 is configured with micro light-emitting diode chips 154 in units of blocks 155, and one block 155 is composed of a horizontal number × vertical number of micro light-emitting diode (LED) chips 154.

[0052] And the wafer 152 can be an R-wafer, a G-wafer, or a B-wafer. In the present invention, Figure 2 an R-wafer is illustrated. If it is an R-wafer, a plurality of red light - micro light-emitting diode chips are formed. If it is a G-wafer, a plurality of green light - micro light-emitting diode chips are formed. If it is a B-wafer, a plurality of blue light - micro light-emitting diode chips are formed.

[0053] The glass substrate portion 160 includes: a glass substrate 162 formed to be separated below the micro light-emitting diode chips 154; and a substrate stage 164 having the glass substrate 162 vacuum-adsorbed thereon.

[0054] The interval a between the lower surface of the wafer stage 142 and the upper surface of the substrate stage 164 is 100 micrometers or less, forming a state of being separated by a very small interval.

[0055] The process of the laser emitted from the laser light source 122 landing the micro light-emitting diode chips 154 formed on the wafer 152 on the glass substrate 162 is called transfer (Lift-Off).

[0056] The laser light source unit 120 is in a fixed state, and the laser from the scanner unit 128 irradiates only a part of all the plurality of micro light-emitting diode chips 154 formed on the lower surface of the wafer 152.

[0057] Accordingly, in order to transfer all of the plurality of micro light-emitting diode chips 154 formed on the lower surface of the wafer 152, the process of transferring a part and then moving the wafer stage 142 and the substrate stage 164 simultaneously by the amplitude of the next transfer region and then irradiating the laser for transfer is repeated until all of the plurality of micro light-emitting diode chips 154 are transferred.

[0058] The transfer process will be described in more detail below.

[0059] Figure 3 FIG. is a first conceptual diagram showing the process of transferring the micro light-emitting diode chips; Figure 4 FIG. is a second conceptual diagram showing the process of transferring the micro light-emitting diode chips.

[0060] Figure 3 The arrows shown in FIGS. are shown in the order of laser irradiation. Actually, the laser irradiates the area at the same position in a fixed state, and the wafer stage 142 and the substrate stage 164 are integrally moved in the direction opposite to the arrow direction for transfer.

[0061] That is, as shown in FIGS. Figure 3 The transfer of the micro light-emitting diode chips 154 formed on the wafer 152 is performed in the first area 1 of the wafer 152. With the laser fixed at the position of the first area 1, the wafer stage 142 and the substrate stage 164 are integrally moved so that the second area 2 moves to the position of the first area 1 and then transfer is performed. Then, the wafer stage 142 and the substrate stage 164 are integrally moved again so that the third area 3 moves to the position of the existing first area 1 irradiated by the laser and then transfer is performed. The above process is also performed in the same manner in the fourth area 4, the fifth area 5, and the sixth area 6.

[0062] At this time, the entire micro light-emitting diode chips 154 formed on the wafer 152 are one of three types of chips, namely red, green, and blue. Therefore, instead of transferring all the chips in one area to the glass substrate 162 at once, only the chips formed at a predetermined interval among the chips in one area are transferred by the action of the mask unit 126.

[0063] After the transfer is completed up to the sixth area 6, with the substrate stage 164 fixed, only the wafer stage 142 moves from the position of Figure 3 to the position of Figure 4

[0064] Then, Figure 4 in the same way as through​Figure 3 During the transfer process described above, the wafer stage 142 and the substrate stage 164 move integrally. After the seventh region 7 moves to the position of the existing first region 1, transfer is performed by laser. Then, the wafer stage 142 and the substrate stage 164 move integrally. After the eighth region 8 moves to the position of the existing first region 1, transfer is performed by laser. The above process is carried out in the ninth region 9, the tenth region 10, the eleventh region 11, and the twelfth region 12.

[0065] During the transfer process, the gap between the lower surface of the wafer stage 142 and the upper surface of the substrate stage 164 is in a state of being separated by a very small gap of 100 micrometers or less. Therefore, the gap between the micro light-emitting diode chips 154 located below the wafer stage 142 and the upper surface of the glass substrate 162 is even smaller. It is necessary to prevent defects from occurring due to contact between the micro light-emitting diode chips 154 and the glass substrate 162 during the process of moving while maintaining such a small gap.

[0066] The present invention will describe the formation structure of the wafer stage 142 and the substrate stage 164 through the following content.

[0067] Figure 5 is a schematic perspective view showing a part of the micro light-emitting diode manufacturing apparatus of the present invention; Figure 6 is for showing Figure 5 a schematic perspective view of the state in which the upper machine table is omitted; Figure 7 is for showing in Figure 6 a schematic perspective view of the state in which a lower plate of the substrate stage is formed on the lower machine table; Figure 8 is for showing in Figure 7 a schematic perspective view of the state in which a middle plate of the substrate stage and an upper plate of the substrate stage are formed on the upper surface of the lower plate of the substrate stage.

[0068] As Figure 5 shown, the micro light-emitting diode manufacturing apparatus 100 of the present invention includes: an upper machine table 102, which forms a space at the lower part for arranging the laser light source unit 120; machine table columns 104, which are formed at the lower parts on both sides of the upper machine table 102; a lower machine table 106, which is formed at the lower part of the machine table columns 104; and a substrate stage 164 and a wafer stage 142, which are formed in the space between the lower machine table 106 and the upper machine table 102.

[0069] As Figure 6 shown, the present invention includes: a lower machine table 106; a lower plate 164-1 of the substrate stage, which is located above the lower machine table 106; an upper plate 164-3 of the substrate stage, which is located above the lower plate 164-1 of the substrate stage; a lower plate 142-1 of the wafer stage, which is located above the upper plate 164-3 of the substrate stage; and an upper plate 142-3 of the wafer stage, which is located above the lower plate 142-1 of the wafer stage.

[0070] The following Figure 7 describes the structure in which the lower plate 164-1 of the substrate stage is formed on the lower machine base 106.

[0071] In the present invention, the front-rear direction of the lower machine base 106 is defined as the x-axis direction, and the left-right direction of the lower machine base 106 is defined as the y-axis direction.

[0072] On the upper part of the lower machine base 106, four grooves 108-1, 108-2, 108-3, and 108-4 are formed at a predetermined interval in the front-rear direction. On the upper part of the first protrusion 109-1 formed between the first groove 108-1 and the second groove 108-2, a first linear motor part 211-1 is formed, and a driving component, i.e., a first linear motor 201-1, is formed inside it. And, on the upper part of the second protrusion 109-2 formed between the third groove 108-3 and the fourth groove 108-4, a second linear motor part 211-2 is formed, and a driving component, i.e., a second linear motor 201-2, is formed inside it.

[0073] On both sides of the first linear motor part 211-1, a first guide wire 221-1 and a second guide wire 221-2 are formed. And, on both sides of the second linear motor part 211-2, a first guide wire 222-1 and a second guide wire 222-2 are formed.

[0074] On one end surface of the lower machine base 106 adjacent to the first groove 108-1, a first guide member 231 having a cross-section in a character shape is formed in the front-rear direction of the lower machine base 106. And, on the other end surface of the lower machine base 106 adjacent to the fourth groove 108-4, a second guide member 233 having a cross-section in a character shape is formed in the front-rear direction of the lower machine base 106 in a shape corresponding to that of the first guide member 231. a second guide member 233 having a cross-section in a character shape.

[0075] And, on one end surface of the lower machine base 106, a first flexible cable duct 310 is formed adjacent to the first guide member 231, and the first flexible cable duct 310 is connected to the lower plate 164-1 of the substrate stage.

[0076] Inside the lower plate 164-1 of the substrate stage, a first moving block 410 that receives the power of the first linear motor part 211-1 and moves in the x-axis direction, and a second moving block 420 that receives the power of the second linear motor part 211-2 and moves in the x-axis direction are formed.

[0077] ​The function of the first flexible cable duct 310 is to connect to the lower substrate plate 164-1 without affecting the movement of the lower substrate plate 164-1 while guiding the wires transmitted to the lower substrate plate 164-1 through the lower machine platform 106.

[0078] The lower substrate plate 164-1 includes: a first ring 141-1 that wraps the first guiding wire 221-1; a first ring 141-2 that wraps the second guiding wire 221-2; a second ring 142-1 that wraps the second guiding wire 222-1; and a second ring 142-2 that wraps the second guiding wire 222-2.

[0079] Moreover, one end 164-1a of the lower substrate plate 164-1 is introduced into the first guiding member 231, and the other end 164-1b of the lower substrate plate 164-1 is introduced into the second guiding member 233.

[0080] The lower substrate plate 164-1 moves in the x-axis direction when the first linear motor unit 211-1 and the second linear motor unit 211-2 operate.

[0081] A first speed sensor 501 that emits ultrasonic waves or the like is formed on the lower substrate plate 164-1, and a first detection member 511 is formed at a position of the lower machine platform 106 opposite to the first speed sensor 501.

[0082] The time from when the ultrasonic wave is emitted from the first speed sensor 501 until it is reflected back from the first detection member 511 is measured, and thereby, the speed at which the lower substrate plate 164-1 moves on the lower machine platform 106 is measured.

[0083] On the upper part of the lower substrate plate 164-1, a driving member, i.e., a third linear motor unit 211-3, and a driving member adjacent and arranged side by side with the third linear motor unit 211-3, i.e., a fourth linear motor unit 211-4, are formed in the y-axis direction.

[0084] The third linear motor unit 211-3 and the fourth linear motor unit 211-4 each form a linear motor inside, and their external shapes are formed as rectangular parallelepiped blocks that are relatively long in the y-axis direction.

[0085] As Figure 8 shown, a middle substrate plate 164-2 is formed on the upper part of the lower substrate plate 164-1, and an upper substrate plate 164-3 is formed on the upper part of the middle substrate plate 164-2.

[0086] Formed below the middle plate 164-2 of the substrate table are: a first substrate groove 610-1, which is in a form that wraps the third linear motor unit 211-3; and a second substrate groove 610-2, which is in a form that wraps the fourth linear motor unit 211-4.

[0087] The first substrate groove 610-1 and the second substrate groove 610-2 are formed parallel to each other.

[0088] Moreover, in the middle plate 164-2 of the substrate table, a third moving block 430 is formed above the first substrate groove 610-1, which moves by receiving the power of the third linear motor unit 211-3, and a fourth moving block 440 is formed above the second substrate groove 610-2 in the middle plate 164-2 of the substrate table, which moves by receiving the power of the fourth linear motor unit 211-4.

[0089] The middle plate 164-2 of the substrate table moves in the y-axis direction when the third linear motor unit 211-3 and the fourth linear motor unit 211-4 operate.

[0090] A second flexible cable duct 320 is formed above the lower plate 164-1 of the substrate table, and the second flexible cable duct 320 is connected to the upper plate 164-3 of the substrate table.

[0091] A second speed sensor 502 is formed on the upper surface of the upper plate 164-3 of the substrate table, which is used to grasp the speed of the upper plate 164-3 of the substrate table moving in the y-axis direction, and a second detection component 512 is formed at a position of the lower machine table 106 opposite to the second speed sensor 502.

[0092] The time when ultrasonic waves are emitted from the second speed sensor 502 and reflected back from the second detection component 512 is measured, and thereby, the speed at which the upper plate 164-3 of the substrate table moves on the lower machine table 106 is measured.

[0093] Moreover, a first horizontal detection sensor 520 and a second horizontal detection sensor 521 that reflect ultrasonic waves upward are formed on the upper surface of the upper plate 164-3 of the substrate table.

[0094] If the time of ultrasonic waves reflected from the lower surface of the lower plate 142-1 of the wafer table is the same, the first horizontal detection sensor 520 and the second horizontal detection sensor 521 determine that the lower surface of the lower plate 142-1 of the wafer table is horizontal, and if the time of ultrasonic waves reflected from the lower surface of the lower plate 142-1 of the wafer table is different, it is determined that the lower surface of the lower plate 142-1 of the wafer table is not horizontal.

[0095] Further, in order to detect foreign matter generated from the gap between the glass substrate 162 and the wafer 152 located above the upper plate 164-3 of the substrate stage, a light generating unit 522 is formed on one side of the glass substrate 162 and a light receiving unit 524 is formed on the other side of the glass substrate 162 on the upper surface of the upper plate 164-3 of the substrate stage to receive the light irradiated from the light generating unit 522.

[0096] When the light receiving unit 524 receives the light irradiated from the light generating unit 522, if there is foreign matter between the glass substrate 162 and the wafer 152, the intensity of the light received by the area with foreign matter is lower than that of other areas. Therefore, the presence of foreign matter can be detected.

[0097] First elevating units 530, 540, and 550 are formed at three positions between the lower part of the upper plate 164-3 of the substrate stage and the upper part of the middle plate 164-2 of the substrate stage.

[0098] The first elevating unit 530 includes a spherical housing part 536 formed on the lower surface of the upper plate 164-3 of the substrate stage with a hollow spherical space inside, a cylinder part 534 formed with a sphere 534-1 introduced into the spherical housing part 536, and a hinge member 532 formed at the lower part of the cylinder part 534.

[0099] The cylinder part 534 is telescopic. And the sphere 534-1 can rotate inside the spherical housing part 536.

[0100] The hinge member 532 is fixed on the upper surface of the middle plate 164-2 of the substrate stage.

[0101] Figure 9 FIG. (a) is a schematic perspective view showing the case where the upper plate of the substrate stage is lifted and lowered by the first elevating unit; Figure 9 FIG. (b) is a schematic perspective view showing the case where the upper plate of the substrate stage is tilted by the first elevating unit.

[0102] As Figure 9 shown in FIG. (a), the first elevating units 530, 540, and 550 are formed at three positions. When all three first elevating units 530, 540, and 550 are lifted and lowered by the same amount, the upper plate 164-3 of the substrate stage can be lifted and lowered in height with respect to the middle plate 164-2 of the substrate stage.

[0103] Further, as Figure 9 shown in FIG. (b), if only the first elevating unit 530 among the first elevating units 530, 540, and 550 descends, the upper plate 164-3 of the substrate stage tilts downward toward the part where the first elevating unit 530 is formed.

[0104] With the above-described configuration, the upper plate 164-3 of the substrate stage of the present invention can be lifted and tilted.

[0105] In the upper central portion of the upper plate 164-3 of the substrate stage, a substrate region portion 710 for disposing a glass substrate 162 is formed. On both sides of the substrate region portion 710 in the x-axis direction, driving components, i.e., a fifth linear motor portion 211-5 and a sixth linear motor portion 211-6, are formed.

[0106] Figure 10 To show a schematic perspective view of the state in which a lower wafer stage is formed on the upper surface of the upper plate of the substrate stage in Figure 8 ; Figure 11 To show a schematic perspective view of the state in which an upper wafer stage is formed on the upper surface of the lower wafer stage in Figure 10 ;

[0107] As Figure 10 shown, a third flexible cable duct 330 is formed in the upper plate 164-3 of the substrate stage of the present invention, and the third flexible cable duct 330 is connected to the lower wafer stage 142-1.

[0108] In the lower wafer stage 142-1, a first wafer groove 710-1 for enclosing the fifth linear motor portion 211-5 and a second wafer groove 710-2 for enclosing the sixth linear motor portion 211-6 are formed.

[0109] Moreover, in the upper portion of the first wafer groove 710-1 of the lower wafer stage 142-1, a fifth moving block 450 driven by the fifth linear motor portion 211-5 is formed, and in the upper portion of the second wafer groove 710-2, a sixth moving block 460 driven by the sixth linear motor portion 211-6 is formed.

[0110] The lower wafer stage 142-1 moves in the x-axis direction when the fifth linear motor portion 211-5 and the sixth linear motor portion 211-6 operate.

[0111] A third speed sensor 503 for generating ultrasonic waves is formed in the lower wafer stage 142-1, and a third detection component 513 for reflecting the ultrasonic waves emitted from the third speed sensor 503 is formed on the upper surface of the upper plate 164-3 of the substrate stage.

[0112] When the lower wafer stage 142-1 moves in the x-axis direction, the third speed sensor 503 and the third detection component 513 can measure the moving speed of the lower wafer stage 142-1.

[0113] Further, a first wafer central hole 810 is formed in the center of the lower wafer stage plate 142-1, and on both sides of the first wafer central hole 810, a driving component formed in the y-axis direction, namely a seventh linear motor unit 211-7 and an eighth linear motor unit 211-8, are formed.

[0114] As Figure 11 shown, a fourth flexible cable duct 340 is formed in the lower wafer stage plate 142-1, and the fourth flexible cable duct 340 is connected to the upper wafer stage plate 142-3.

[0115] A third wafer groove 710-3 that encloses the seventh linear motor unit 211-7 and a fourth wafer groove 710-4 that encloses the eighth linear motor unit 211-8 are formed in the upper wafer stage plate 142-3.

[0116] A seventh moving block 470 driven by the seventh linear motor unit 211-7 is formed above the third wafer groove 710-3 of the upper wafer stage plate 142-3, and an eighth moving block 480 driven by the eighth linear motor unit 211-8 is formed above the fourth wafer groove 710-4.

[0117] The upper wafer stage plate 142-3 moves in the y-axis direction when the seventh linear motor unit 211-7 and the eighth linear motor unit 211-8 are operating.

[0118] A fourth speed sensor 504 that emits ultrasonic waves is formed in the upper wafer stage plate 142-3, and a fourth detection component 514 that reflects the ultrasonic waves emitted from the fourth speed sensor 504 is formed in the lower wafer stage plate 142-1.

[0119] The speed of the upper wafer stage plate 142-3 moving in the y-axis direction can be measured by the fourth speed sensor 504 and the fourth detection component 514.

[0120] A second wafer central hole 820 is formed in the center of the upper wafer stage plate 142-3.

[0121] Figure 12 It is a schematic cross-sectional view of the A-A' part of the upper wafer stage plate.

[0122] Second lifting parts 532, 542, 552 are formed in the lower part around the second wafer central hole 820 of the upper wafer stage plate 142-3. A wafer adsorption part 810 is formed below the second lifting parts 532, 542, 552. A wafer 152 is adsorbed by the wafer adsorption part 810, and a micro light-emitting diode chip 154 is formed below the wafer 152.

[0123] The second lifting parts 532, 542, 552 are formed at three positions between the wafer table upper plate 142-3 and the wafer suction part 810, and their shapes are similar to those of the first lifting part 530. Therefore, detailed descriptions thereof are omitted.

[0124] Below the wafer suction part 810, a first distance measuring sensor 527 and a second distance measuring sensor 528 using ultrasonic waves are formed.

[0125] The first distance measuring sensor 527 and the second distance measuring sensor 528 are in a state of being relatively separated with the wafer 152 as the center, emit ultrasonic waves to the glass substrate 162 located below, and measure the arrival time of the reflected ultrasonic waves, thereby measuring whether the interval between the wafer suction part 810 and the glass substrate 162 is uniform.

[0126] According to the present invention, whether the interval between the wafer suction part 810 and the glass substrate 162 is maintained uniformly can be grasped through the first distance measuring sensor 527 and the second distance measuring sensor 528. Therefore, the precision can be improved.

[0127] Figure 13 For showing Figure 11 a schematic partial perspective view of a modified example of

[0128] Figure 13 It shows a case where a wafer table middle plate 142-2 is formed between the wafer table lower plate 142-1 and the wafer table upper plate 142-3.

[0129] On the wafer table lower plate 142-1, a first wafer groove 710-1 wrapping the fifth linear motor part 211-5 and a second wafer groove 710-2 wrapping the sixth linear motor part 211-6 are formed.

[0130] Third lifting parts 534, 544, 554 are formed at three positions between the wafer table lower plate 142-1 and the wafer table middle plate 142-2.

[0131] The structures of the third lifting parts 534, 544, 554 are similar to those of the second lifting parts 532, 542, 552. Therefore, detailed descriptions thereof are omitted.

[0132] The wafer table middle plate 142-2 can be lifted or tilted with reference to the wafer table lower plate 142-1 through the third lifting parts 534, 544, 554.

[0133] And, on the wafer table middle plate 142-2, a seventh linear motor part 211-7 and an eighth linear motor part 211-8 formed in the y-axis direction are formed.

[0134] A fourth flexible cable duct 340 is formed in the lower wafer stage plate 142-1, and the fourth flexible cable duct 340 is connected to the upper wafer stage plate 142-3.

[0135] A third wafer groove 710-3 that wraps the seventh linear motor unit 211-7 and a fourth wafer groove 710-4 that wraps the eighth linear motor unit 211-8 are formed in the upper wafer stage plate 142-3.

[0136] A 3-1 wafer central hole 810-3 is formed in the center of the upper wafer stage plate 142-3.

[0137] Figure 14 For Figure 13 Schematic view of the side around the 3-1 wafer central hole.

[0138] As Figure 14 As shown, when the lifting part of the present invention is formed between the lower wafer stage plate 142-1 and the middle wafer stage plate 142-2, a plurality of support rods 910 are formed downward from the periphery of the 3-1 wafer central hole 810-3 of the upper wafer stage plate 142-3. A wafer adsorption part 810 is formed at the lower part of the support rod 910. A wafer 152 is adsorbed under the wafer adsorption part 810, and a micro light-emitting diode chip 154 is formed on the wafer 152.

[0139] The present invention has a structure in which a movable substrate stage 164 is formed on the upper part of the lower machine base 106, and a movable wafer stage 142 is formed on the upper part of the substrate stage 164. Thus, it has the following effects: a structure in which the substrate stage 164 and the wafer stage 142 move integrally and simultaneously with the lower machine base 106 as a reference, and a structure in which only the wafer stage 142 moves on the upper part of the substrate stage 164 with the lower machine base 106 as a reference in a state where the substrate stage 164 is fixed.

[0140] Therefore, the present invention forms a structure in which the wafer stage 142 can move on the upper part of the substrate stage 164, so that the substrate stage 164 and the wafer stage 142 can move integrally and simultaneously with the lower machine base 106 as a reference. Thus, a structure in which the substrate stage 164 can move on the upper part of the lower machine base 106 and the wafer stage 142 can move on the upper machine base 102 is formed. When the substrate stage 164 and the wafer stage 142 move simultaneously, the problem of unevenly maintained intervals can be solved.

[0141] A structure in which the wafer stage 142 can move on the upper part of the substrate stage 164 is formed. Therefore, the following effects can be obtained: when the wafer stage 142 moves on the upper part of the substrate stage 164, the interval between the micro light-emitting diode chip 154 and the glass substrate part 160 can be easily maintained.

[0142] In the above description of the present invention, the embodiments are provided by selecting the most preferred examples from various feasible examples to facilitate the understanding of those skilled in the technical field of the present invention. The technical idea of the present invention is not limited to the above embodiments, and various transformations, changes, and equivalent other embodiments can be made without departing from the technical idea of the present invention.

[0143] Description of Reference Numerals

[0144] 100: Micro light-emitting diode manufacturing apparatus 106: Lower machine platform

[0145] 108-1: First groove 120: Laser light source unit

[0146] 122: Laser light source 124: Lens barrel unit

[0147] 126: Mask unit 128: Scanner unit

[0148] 140: Wafer unit 152: Wafer

[0149] 154: Micro light-emitting diode chip 160: Glass substrate unit

[0150] 211-1: First linear motor unit 231: First guiding member

[0151] 310: First flexible cable duct 530, 540, 550: First lifting unit

Claims

1. A micro light-emitting diode manufacturing apparatus, which is a micro light-emitting diode manufacturing apparatus that irradiates a laser to transfer a micro light-emitting diode chip of a wafer to a glass substrate, and is characterized in that Comprising: A wafer stage for holding the wafer; A substrate stage for holding the glass substrate; A lower machine base formed under the substrate stage; A first driving component formed on the substrate stage to move the wafer stage; and A second driving component formed on the lower machine base to move the substrate stage, and a structure is formed such that the wafer stage can move above the substrate stage, so that the substrate stage and the wafer stage can move integrally and simultaneously with reference to the lower machine base, The wafer stage includes: a lower wafer stage plate that moves in a first direction through the first driving component; an upper wafer stage plate that moves in a second direction different from the first direction through a third driving component formed on the lower wafer stage plate; and a wafer suction part formed at the lower part around the central hole formed on the upper wafer stage plate, A lower substrate stage plate that moves in a third direction through the second driving component is formed on the substrate stage, On the upper surface of the lower machine table, there are relatively formed a first guiding member and a second guiding member having a cross-section formed in the shape of the character " ", One end of the lower substrate stage plate is introduced into the first guiding component, and the other end of the lower substrate stage plate is introduced into the second guiding component. A guiding wire is formed on one side of the second driving component of the lower machine base, and a loop for wrapping the guiding wire is formed on the lower substrate stage plate, A first level detection sensor and a second level detection sensor for emitting ultrasonic waves to the lower wafer stage plate to determine whether the lower wafer stage plate is level are formed on the upper substrate stage plate, To detect foreign objects, a light emitting part is formed on the upper substrate stage plate on one side of the glass substrate; and a light receiving part is formed on the other side of the glass substrate to receive the light irradiated from the light emitting part, A first distance measurement sensor and a second distance measurement sensor are formed on the wafer suction part to measure whether the distance between the wafer suction part and the glass substrate is uniform.

2. The micro light emitting diode manufacturing device according to claim 1, wherein The substrate stage includes: A middle substrate stage plate that moves in a fourth direction different from the third direction through a fourth driving component formed on the lower substrate stage plate; and An upper substrate stage plate that is formed to be able to move up and down from above the middle substrate stage plate.

3. The micro light emitting diode manufacturing device according to claim 2, wherein First lifting parts are formed at three positions between the middle substrate stage plate and the upper substrate stage plate.

4. The micro light emitting diode manufacturing device according to claim 3, wherein A first speed sensor for grasping the moving speed of the lower substrate stage plate is formed on the lower substrate stage plate, A first detection component is formed at a position of the lower machine base opposite to the first speed sensor.

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